JP5453543B2 - シリコン系薄膜太陽電池のための堆積ボックス - Google Patents
シリコン系薄膜太陽電池のための堆積ボックス Download PDFInfo
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- 230000008021 deposition Effects 0.000 title claims description 58
- 239000010409 thin film Substances 0.000 title claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 22
- 229910052710 silicon Inorganic materials 0.000 title claims description 22
- 239000010703 silicon Substances 0.000 title claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 description 45
- 239000007789 gas Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 239000011521 glass Substances 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 230000002500 effect on skin Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000427 thin-film deposition Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003411 electrode reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
- H01L31/1816—Special manufacturing methods for microcrystalline layers, e.g. uc-SiGe, uc-SiC
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Description
本発明の目的は、VHF電源駆動放電システムの不均一性の問題を解決し、電極板要素を有する電極アレイの新しい概念設計の使用により、均一な電界を持つ大面積VHF−PECVD堆積チャンバを提供することを包含し、大面積VHF−PECVD電極板多板アレイの生産に適用される。
実施態様1
電極板が垂直に配設される。カソード板が円給電ポートを有し、給電要素が平坦な胴部および半円給電インターフェースを有する。
電極板が垂直に配設される。カソード板が円給電ポートを有する。給電要素が平坦な胴部および半円給電インターフェースを有する。カソード板がシールドから絶縁され、スルーホールがカソード板のシールドに設けられる。
電極板が垂直に配設される。カソード板が円給電ポートを有する。給電要素が平坦な胴部および半円給電インターフェースを有する。カソード板がシールドから絶縁され、スルーホールがカソード板のシールドに設けられる。
Claims (12)
- シリコン系薄膜太陽電池のための堆積ボックスであって、
電極板要素、
信号給電要素、および
チャンバ
を含み、
電極板要素が、カソード板およびカソード板のシールドカバーを包含し、チャンバがローラを持つ可動チャンバであり、電極板からなる設置された電極アレイを含有し、
給電ポートが、電極板要素の裏側の中心における、電極板要素の裏側の表面からくぼんだ円または半円領域に位置し、
表面接触により給電ポートに接続された信号給電要素が、超短波(VHF)電源信号のマイナス電極に接続され、
信号給電要素の一つの端部の表面が、円または半円であり、
カソード板のシールドカバーが、スルーホールを有し、
カソード板が、シールドカバーから絶縁され、
電極アレイが少なくとも1セットのカソード板および一つのアノード板を包含する、
堆積ボックス。 - 二つの対称位置にあるカソード板の作動放電動作領域の方に個別に向くように、二つの表面を持つ一つのアノード板を配設することにより、1セットのカソード板および一つのアノード板が配置される、請求項1記載のシリコン系薄膜太陽電池のための堆積ボックス。
- 信号給電要素が、銅給電コア、絶縁層およびシールド層を包含する、請求項1記載のシリコン系薄膜太陽電池のための堆積ボックス。
- カソード板が片面放電し、カソード板のシールドカバーがセラミック絶縁層およびシールド層を包含し、シールドカバーがカソード板の背面および側部表面全体を覆う、請求項1記載のシリコン系薄膜太陽電池のための堆積ボックス。
- 電極が、シールドカバーを持つ複数のカソード板および複数の接地されたアノード板を包含し、特定の放電空間を持つ電極アレイを形成する、請求項1〜4のいずれか一項記載のシリコン系薄膜太陽電池のための堆積ボックス。
- VHF電源信号を給電するため、シールドカバーが、カソード板の背面側の中心位置および周囲側部のシールドを包含する、請求項5記載のシリコン系薄膜太陽電池のための堆積ボックス。
- 信号給電要素が、胴部およびヘッド部を包含し、Z形状を有し、胴部がセラミック絶縁層を有し、金属給電コアがVHF給電ラインの導体である、請求項5記載のシリコン系薄膜太陽電池のための堆積ボックス。
- 信号給電要素の一つの端部が、VHF電源信号のマイナス出力ポートおよび電源適合装置に接続される、請求項1記載のシリコン系薄膜太陽電池のための堆積ボックス。
- シリコン系薄膜太陽電池のための堆積ボックスの信号給電方法であって、
チャンバ内に信号給電モードのための電極板要素、給電要素を含み、
電極アレイが、ローラを持つ可動チャンバに設置され、
電極アレイが、少なくとも1セットのカソード板および一つのアノード板を包含し、
給電ポートが、電極板要素の裏側の中心における、電極板要素の裏側の表面からくぼんだ円または半円領域に位置し、
信号給電要素の一つの端部が、円または半円形状であり、電極板要素の給電ポートに表面接触してVHF電源信号を給電し、
カソードシールドカバーおよびアノード板が接地される、
信号給電方法。 - 電極が複数の給電要素および電極板要素を包含し、
VHF電源信号が、表面給電方法により電極板の給電ポートに給電され、特定の放電空間を持つ電極アレイを形成する、請求項9記載のシリコン系薄膜太陽電池のための堆積ボックスの信号給電方法。 - 「Z形状」給電要素の胴部がセラミック絶縁層を有する一方、金属給電コアがVHF信号給電ラインの導体である、請求項9記載のシリコン系薄膜太陽電池のための堆積ボックスの信号給電方法。
- 信号給電要素の一つの端部が、VHF電源信号のマイナス出力ポートおよび電源適合装置に接続される、請求項11記載のシリコン系薄膜太陽電池のための堆積ボックスの信号給電方法。
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CN201010198688.0 | 2010-06-11 | ||
CN2010101986880A CN101880868B (zh) | 2010-06-11 | 2010-06-11 | 一种硅基薄膜太阳能电池的沉积盒 |
PCT/CN2010/001658 WO2011153674A1 (zh) | 2010-06-11 | 2010-10-21 | 一种硅基薄膜太阳能电池的沉积盒 |
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US (1) | US8297226B2 (ja) |
EP (1) | EP2468922B1 (ja) |
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KR (1) | KR101337026B1 (ja) |
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CN101882647B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池活动夹具 |
CN101882646B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积夹具 |
CN101859801B (zh) * | 2010-06-11 | 2013-02-20 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用放电电极板阵列 |
CN101880868B (zh) * | 2010-06-11 | 2012-03-07 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池的沉积盒 |
CN101857953B (zh) * | 2010-06-11 | 2012-04-18 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池沉积用面馈入电极 |
CN102888596B (zh) * | 2011-07-22 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 腔室装置及具有该腔室装置的等离子体处理设备 |
CN102277562B (zh) * | 2011-08-15 | 2013-05-08 | 深圳市创益科技发展有限公司 | 薄膜太阳能电池多级pecvd沉积设备 |
HUP1100436A2 (en) * | 2011-08-15 | 2013-02-28 | Ecosolifer Ag | Gas flow system for using in reaction chamber |
CN103167716A (zh) * | 2011-12-19 | 2013-06-19 | 亚树科技股份有限公司 | 直立式电浆产生装置 |
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CN101882647B (zh) * | 2010-06-11 | 2012-01-25 | 深圳市创益科技发展有限公司 | 一种硅基薄膜太阳能电池活动夹具 |
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CN101880868A (zh) | 2010-11-10 |
EP2468922A1 (en) | 2012-06-27 |
JP2013508545A (ja) | 2013-03-07 |
EP2468922A4 (en) | 2013-05-29 |
KR101337026B1 (ko) | 2013-12-05 |
WO2011153674A1 (zh) | 2011-12-15 |
EP2468922B1 (en) | 2014-12-10 |
KR20120107008A (ko) | 2012-09-27 |
US8297226B2 (en) | 2012-10-30 |
CN101880868B (zh) | 2012-03-07 |
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