SG177129A1 - Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane - Google Patents

Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane Download PDF

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Publication number
SG177129A1
SG177129A1 SG2011087228A SG2011087228A SG177129A1 SG 177129 A1 SG177129 A1 SG 177129A1 SG 2011087228 A SG2011087228 A SG 2011087228A SG 2011087228 A SG2011087228 A SG 2011087228A SG 177129 A1 SG177129 A1 SG 177129A1
Authority
SG
Singapore
Prior art keywords
wafer
etch stop
micro
stop layer
vias
Prior art date
Application number
SG2011087228A
Other languages
English (en)
Inventor
Lior Shiv
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG177129A1 publication Critical patent/SG177129A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Weting (AREA)
SG2011087228A 2006-09-26 2007-09-25 Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane SG177129A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US84804306P 2006-09-26 2006-09-26
US11/669,664 US7531445B2 (en) 2006-09-26 2007-01-31 Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane

Publications (1)

Publication Number Publication Date
SG177129A1 true SG177129A1 (en) 2012-01-30

Family

ID=39225475

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2011087228A SG177129A1 (en) 2006-09-26 2007-09-25 Formation of through-wafer electrical interconnections and other structures using a thin dielectric membrane

Country Status (10)

Country Link
US (3) US7531445B2 (enExample)
EP (3) EP2082422B1 (enExample)
JP (1) JP5313903B2 (enExample)
KR (1) KR101423749B1 (enExample)
CN (1) CN101517729B (enExample)
DK (1) DK2082422T3 (enExample)
MY (1) MY145677A (enExample)
SG (1) SG177129A1 (enExample)
TW (1) TWI376016B (enExample)
WO (1) WO2008038158A2 (enExample)

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TWI446498B (zh) 2009-03-13 2014-07-21 泰斯拉公司 具有延伸穿越銲墊之通孔的堆疊微電子總成
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US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8598695B2 (en) 2010-07-23 2013-12-03 Tessera, Inc. Active chip on carrier or laminated chip having microelectronic element embedded therein
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
CN102403413B (zh) * 2010-09-19 2013-09-18 常州普美电子科技有限公司 Led散热基板、led封装结构及二者的制作方法
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Also Published As

Publication number Publication date
HK1137565A1 (en) 2010-07-30
EP2750176A2 (en) 2014-07-02
US7531445B2 (en) 2009-05-12
WO2008038158A3 (en) 2008-08-28
TW200832615A (en) 2008-08-01
MY145677A (en) 2012-03-15
TWI376016B (en) 2012-11-01
US20080076195A1 (en) 2008-03-27
DK2082422T3 (en) 2014-12-08
US7732240B2 (en) 2010-06-08
WO2008038158B1 (en) 2008-11-27
US7662710B2 (en) 2010-02-16
KR101423749B1 (ko) 2014-08-01
JP2010505259A (ja) 2010-02-18
US20090191704A1 (en) 2009-07-30
JP5313903B2 (ja) 2013-10-09
KR20090076899A (ko) 2009-07-13
EP2750176A3 (en) 2014-07-16
EP2750177A3 (en) 2014-10-22
EP2750177A2 (en) 2014-07-02
WO2008038158A2 (en) 2008-04-03
CN101517729A (zh) 2009-08-26
US20100015734A1 (en) 2010-01-21
EP2082422B1 (en) 2014-11-26
CN101517729B (zh) 2011-08-10
EP2082422A2 (en) 2009-07-29

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