SG171633A1 - Radiation system and lithographic apparatus comprising the same - Google Patents

Radiation system and lithographic apparatus comprising the same

Info

Publication number
SG171633A1
SG171633A1 SG201103036-8A SG2011030368A SG171633A1 SG 171633 A1 SG171633 A1 SG 171633A1 SG 2011030368 A SG2011030368 A SG 2011030368A SG 171633 A1 SG171633 A1 SG 171633A1
Authority
SG
Singapore
Prior art keywords
same
lithographic apparatus
radiation system
lithographic system
optical sensor
Prior art date
Application number
SG201103036-8A
Other languages
English (en)
Inventor
Herpen Maarten Marinus Johannes Wilhelmus Van
Vadim Yevgenyevich Banine
Johannes Christiaan Leonardus Franken
Olav Waldemar Vladimir Frijns
Derk Jan Wilfred Klunder
Niels Machiel Driessen
Wouter Anthon Soer
Original Assignee
Asml Netherlands B V Nl
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B V Nl, Koninkl Philips Electronics Nv filed Critical Asml Netherlands B V Nl
Publication of SG171633A1 publication Critical patent/SG171633A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • X-Ray Techniques (AREA)
SG201103036-8A 2006-09-27 2007-09-25 Radiation system and lithographic apparatus comprising the same SG171633A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/527,731 US7541603B2 (en) 2006-09-27 2006-09-27 Radiation system and lithographic apparatus comprising the same

Publications (1)

Publication Number Publication Date
SG171633A1 true SG171633A1 (en) 2011-06-29

Family

ID=39224584

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201103036-8A SG171633A1 (en) 2006-09-27 2007-09-25 Radiation system and lithographic apparatus comprising the same

Country Status (8)

Country Link
US (2) US7541603B2 (ja)
EP (1) EP2082289A2 (ja)
JP (2) JP5208119B2 (ja)
KR (1) KR101151769B1 (ja)
CN (1) CN101583909B (ja)
SG (1) SG171633A1 (ja)
TW (2) TWI371663B (ja)
WO (1) WO2008039068A2 (ja)

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US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same
JP4973425B2 (ja) * 2007-10-03 2012-07-11 ウシオ電機株式会社 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置
NL1036832A1 (nl) * 2008-04-15 2009-10-19 Asml Netherlands Bv Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus.
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
CN102472975A (zh) * 2009-06-30 2012-05-23 Asml荷兰有限公司 光谱纯度滤光片、光刻设备和用于制造光谱纯度滤光片的方法
NL2007287A (en) 2010-09-14 2012-03-15 Asml Netherlands Bv Correction for flare effects in lithography system.
CN102890423B (zh) * 2011-07-20 2015-07-22 上海微电子装备有限公司 光电探测器校准装置及其校准方法
US10095119B2 (en) * 2012-11-15 2018-10-09 Asml Netherlands B.V. Radiation source and method for lithography
CN103162848A (zh) * 2013-03-27 2013-06-19 哈尔滨工业大学 YAG:Ce荧光屏实现毛细管放电极紫外光刻光源等离子体状态检测系统
US9846365B2 (en) 2013-08-02 2017-12-19 Asml Netherlands B.V. Component for a radiation source, associated radiation source and lithographic apparatus
WO2015165705A1 (en) * 2014-05-01 2015-11-05 Asml Netherlands B.V. Cleaning apparatus and associated low pressure chamber apparatus
CN107077073B (zh) * 2014-09-11 2018-12-07 Asml荷兰有限公司 用于监测辐射源的装置、辐射源、监测辐射源的方法、器件制造方法
US20180329292A1 (en) * 2015-11-20 2018-11-15 Asml Netherlands B.V. Lithographic Apparatus and Method of Operating a Lithographic Apparatus
WO2017187571A1 (ja) * 2016-04-27 2017-11-02 ギガフォトン株式会社 極端紫外光センサユニット及び極端紫外光生成装置
DE102017205452A1 (de) 2017-03-30 2017-06-14 Carl Zeiss Smt Gmbh Debris-Detektor
KR102697196B1 (ko) * 2017-12-15 2024-08-20 에이에스엠엘 네델란즈 비.브이. 진공 용기 내의 파편 플럭스 측정 시스템의 재생 방법
US11307311B2 (en) * 2018-10-23 2022-04-19 Thermo Fisher Scientific Messtechnik Gmbh Gamma ray and neutron dosimeter
US20230259035A1 (en) * 2022-02-11 2023-08-17 Applied Materials, Inc. Characterization of photosensitive materials
EP4312078A1 (en) * 2022-07-29 2024-01-31 ASML Netherlands B.V. Contamination determination

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US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same

Also Published As

Publication number Publication date
TW201243520A (en) 2012-11-01
TW200821771A (en) 2008-05-16
US7863591B2 (en) 2011-01-04
TWI371663B (en) 2012-09-01
KR20090074170A (ko) 2009-07-06
CN101583909B (zh) 2011-07-20
KR101151769B1 (ko) 2012-06-15
TWI485532B (zh) 2015-05-21
JP2011228742A (ja) 2011-11-10
US20090309048A1 (en) 2009-12-17
WO2008039068A2 (en) 2008-04-03
JP5496964B2 (ja) 2014-05-21
CN101583909A (zh) 2009-11-18
JP2010505261A (ja) 2010-02-18
EP2082289A2 (en) 2009-07-29
US7541603B2 (en) 2009-06-02
US20080074655A1 (en) 2008-03-27
JP5208119B2 (ja) 2013-06-12
WO2008039068A3 (en) 2008-08-14

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