JP5208119B2 - 光センサ装置 - Google Patents
光センサ装置 Download PDFInfo
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- JP5208119B2 JP5208119B2 JP2009530300A JP2009530300A JP5208119B2 JP 5208119 B2 JP5208119 B2 JP 5208119B2 JP 2009530300 A JP2009530300 A JP 2009530300A JP 2009530300 A JP2009530300 A JP 2009530300A JP 5208119 B2 JP5208119 B2 JP 5208119B2
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- euv
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- 230000003287 optical effect Effects 0.000 title claims description 30
- 230000005855 radiation Effects 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 14
- 230000007246 mechanism Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims description 5
- 230000004044 response Effects 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 42
- 238000000059 patterning Methods 0.000 description 32
- 238000011109 contamination Methods 0.000 description 23
- 239000010410 layer Substances 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000356 contaminant Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000011888 foil Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 208000025174 PANDAS Diseases 0.000 description 1
- 208000021155 Paediatric autoimmune neuropsychiatric disorders associated with streptococcal infection Diseases 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000011086 high cleaning Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- X-Ray Techniques (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Description
[0013] -放射ビームB(例えば、UV放射またはEUV放射)を調整するように構成された照明システム(イルミネータ)ILと、
[0014] -パターニングデバイス(例えば、マスク)MAを保持するように構成され、かつ特定のパラメータに従ってパターニングデバイスを正確に位置付けるように構成された第1のポジショナPMに連結されているサポート構造(例えば、マスクテーブル)MTと、
[0015] -基板(例えば、レジストコートウェーハ)Wを保持するように構成され、かつ特定のパラメータに従って基板を正確に位置付けるように構成された第2のポジショナPWに連結されている基板テーブル(例えば、ウェーハテーブル)WTと、
[0016] -パターニングデバイスMAによって放射ビームBに付与されたパターンを基板Wのターゲット部分C(例えば、1つ以上のダイを含む)上に投影するように構成されている投影システム(例えば、屈折投影レンズシステム)PSとを備える。
Claims (5)
- 極端紫外線リソグラフィシステムにおける使用のための光センサ装置であって、
センサ表面を含む光センサであって、YAG:Ceを含むEUV感応性シンチレーション材料、および入射EUV放射が引き起こすシンチレーションに応答して前記シンチレーション材料から発されるフォトニックエネルギーを検出する検出器を含む、前記光センサと、
前記センサ表面からデブリを除去する除去機構であって、前記センサ表面の温度を上昇させる加熱システムを含む、前記除去機構と、
を含み、
前記加熱システムは、前記センサ表面を囲むように設けられている、
光センサ装置。 - 前記上昇温度は、少なくとも900℃である、請求項1に記載の光センサ装置。
- 前記加熱システムは、
前記センサ表面を囲むように設けられた直立周囲壁と、
前記直立周囲壁を加熱する加熱要素と、
を含む請求項1又は2に記載の光センサ装置。 - 前記EUV源は、レーザ誘導プラズマ源または放電生成プラズマ源である、請求項1〜3のいずれかに記載の光センサ装置。
- 前記プラズマ源は、SnまたはXeを含む、請求項4に記載の光センサ装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/527,731 US7541603B2 (en) | 2006-09-27 | 2006-09-27 | Radiation system and lithographic apparatus comprising the same |
US11/527,731 | 2006-09-27 | ||
PCT/NL2007/050466 WO2008039068A2 (en) | 2006-09-27 | 2007-09-25 | Radiation system and lithographic apparatus comprising the same |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011162445A Division JP5496964B2 (ja) | 2006-09-27 | 2011-07-25 | 光センサ装置及びeuv放射を検出する方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010505261A JP2010505261A (ja) | 2010-02-18 |
JP5208119B2 true JP5208119B2 (ja) | 2013-06-12 |
Family
ID=39224584
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530300A Active JP5208119B2 (ja) | 2006-09-27 | 2007-09-25 | 光センサ装置 |
JP2011162445A Active JP5496964B2 (ja) | 2006-09-27 | 2011-07-25 | 光センサ装置及びeuv放射を検出する方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011162445A Active JP5496964B2 (ja) | 2006-09-27 | 2011-07-25 | 光センサ装置及びeuv放射を検出する方法 |
Country Status (8)
Country | Link |
---|---|
US (2) | US7541603B2 (ja) |
EP (1) | EP2082289A2 (ja) |
JP (2) | JP5208119B2 (ja) |
KR (1) | KR101151769B1 (ja) |
CN (1) | CN101583909B (ja) |
SG (1) | SG171633A1 (ja) |
TW (2) | TWI371663B (ja) |
WO (1) | WO2008039068A2 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
JP5305568B2 (ja) * | 2006-05-22 | 2013-10-02 | 株式会社東芝 | 露光装置及びケミカルフィルタ寿命検知方法 |
US7541603B2 (en) * | 2006-09-27 | 2009-06-02 | Asml Netherlands B.V. | Radiation system and lithographic apparatus comprising the same |
JP4973425B2 (ja) * | 2007-10-03 | 2012-07-11 | ウシオ電機株式会社 | 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置 |
NL1036832A1 (nl) * | 2008-04-15 | 2009-10-19 | Asml Netherlands Bv | Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus. |
NL1036803A (nl) * | 2008-09-09 | 2010-03-15 | Asml Netherlands Bv | Radiation system and lithographic apparatus. |
JP5559562B2 (ja) * | 2009-02-12 | 2014-07-23 | ギガフォトン株式会社 | 極端紫外光光源装置 |
KR20120101983A (ko) * | 2009-06-30 | 2012-09-17 | 에이에스엠엘 네델란즈 비.브이. | 스펙트럼 퓨리티 필터, 리소그래피 장치, 및 스펙트럼 퓨리티 필터를 제조하는 방법 |
NL2007287A (en) * | 2010-09-14 | 2012-03-15 | Asml Netherlands Bv | Correction for flare effects in lithography system. |
CN102890423B (zh) * | 2011-07-20 | 2015-07-22 | 上海微电子装备有限公司 | 光电探测器校准装置及其校准方法 |
US10095119B2 (en) * | 2012-11-15 | 2018-10-09 | Asml Netherlands B.V. | Radiation source and method for lithography |
CN103162848A (zh) * | 2013-03-27 | 2013-06-19 | 哈尔滨工业大学 | YAG:Ce荧光屏实现毛细管放电极紫外光刻光源等离子体状态检测系统 |
CN105408817B (zh) * | 2013-08-02 | 2018-11-02 | Asml荷兰有限公司 | 用于辐射源的部件、关联的辐射源和光刻设备 |
WO2015165705A1 (en) * | 2014-05-01 | 2015-11-05 | Asml Netherlands B.V. | Cleaning apparatus and associated low pressure chamber apparatus |
CN107077073B (zh) * | 2014-09-11 | 2018-12-07 | Asml荷兰有限公司 | 用于监测辐射源的装置、辐射源、监测辐射源的方法、器件制造方法 |
US20180329292A1 (en) * | 2015-11-20 | 2018-11-15 | Asml Netherlands B.V. | Lithographic Apparatus and Method of Operating a Lithographic Apparatus |
WO2017187571A1 (ja) * | 2016-04-27 | 2017-11-02 | ギガフォトン株式会社 | 極端紫外光センサユニット及び極端紫外光生成装置 |
DE102017205452A1 (de) | 2017-03-30 | 2017-06-14 | Carl Zeiss Smt Gmbh | Debris-Detektor |
KR20200096777A (ko) * | 2017-12-15 | 2020-08-13 | 에이에스엠엘 네델란즈 비.브이. | 진공 용기 내의 파편 플럭스 측정 시스템의 재생 방법 |
US11307311B2 (en) * | 2018-10-23 | 2022-04-19 | Thermo Fisher Scientific Messtechnik Gmbh | Gamma ray and neutron dosimeter |
US20230259035A1 (en) * | 2022-02-11 | 2023-08-17 | Applied Materials, Inc. | Characterization of photosensitive materials |
EP4312078A1 (en) * | 2022-07-29 | 2024-01-31 | ASML Netherlands B.V. | Contamination determination |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4626634A (en) * | 1982-09-30 | 1986-12-02 | At&T Bell Laboratories | Multiprocessor computing system featuring shared global control |
US4692884A (en) * | 1983-01-03 | 1987-09-08 | Diffracto, Ltd. | Remote operation of optical system |
AT381795B (de) * | 1984-05-08 | 1986-11-25 | Voest Alpine Ag | Vorrichtung zum reinigen eines lanzenkopfes einer in ein metallurgisches gefaess einbringbaren lanze |
JP2000349009A (ja) | 1999-06-04 | 2000-12-15 | Nikon Corp | 露光方法及び装置 |
TWI267704B (en) * | 1999-07-02 | 2006-12-01 | Asml Netherlands Bv | Capping layer for EUV optical elements |
JP3069700B1 (ja) * | 1999-07-22 | 2000-07-24 | 静岡大学長 | 放電容器及びその放電容器を備えたプラズマラジカル生成装置 |
KR100563774B1 (ko) * | 2000-08-25 | 2006-03-24 | 에이에스엠엘 네델란즈 비.브이. | 마스크 조작장치, 리소그래피 투영장치, 디바이스제조방법 및 그것에 의하여 제조된 디바이스 |
DE60131203T2 (de) * | 2000-08-25 | 2008-08-07 | Asml Netherlands B.V. | Lithographischer Apparat |
JP3564104B2 (ja) * | 2002-01-29 | 2004-09-08 | キヤノン株式会社 | 露光装置及びその制御方法、これを用いたデバイスの製造方法 |
DE10205189B4 (de) * | 2002-02-06 | 2012-06-28 | Xtreme Technologies Gmbh | Verfahren zur Erzeugung von extrem ultravioletter Strahlung auf Basis eines strahlungsemittierenden Plasmas |
DE60323927D1 (de) * | 2002-12-13 | 2008-11-20 | Asml Netherlands Bv | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
DE10318562A1 (de) | 2003-04-24 | 2004-11-11 | Carl Zeiss Sms Gmbh | Anordnung zur Inspektion von Objekten, insbesondere von Masken in der Mikrolithographie |
EP1526550A1 (en) | 2003-10-20 | 2005-04-27 | ASML Netherlands B.V. | Mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method |
EP1530091A1 (en) | 2003-11-07 | 2005-05-11 | ASML Netherlands B.V. | Radiation detector |
TWI294554B (en) * | 2003-11-07 | 2008-03-11 | Asml Netherlands Bv | Radiation detector |
US7006284B2 (en) * | 2004-05-17 | 2006-02-28 | Fricke William C | Apparatus for viewing and analyzing ultraviolet beams |
TWI305296B (en) * | 2004-07-27 | 2009-01-11 | Cymer Inc | Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source |
DE102004047677B4 (de) * | 2004-09-30 | 2007-06-21 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System für die Kontaminationserkennung und Überwachung in einer Lithographiebelichtungsanlage und Verfahren zum Betreiben der gleichen unter gesteuerten atomsphärischen Bedingungen |
WO2006039161A2 (en) * | 2004-09-30 | 2006-04-13 | Advanced Micro Devices, Inc. | Method and system for contamination detection and monitoring in a lithographic exposure tool and operating method for the same under controlled atmospheric conditions |
US7355672B2 (en) * | 2004-10-04 | 2008-04-08 | Asml Netherlands B.V. | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
US7372049B2 (en) * | 2005-12-02 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus including a cleaning device and method for cleaning an optical element |
US7541603B2 (en) * | 2006-09-27 | 2009-06-02 | Asml Netherlands B.V. | Radiation system and lithographic apparatus comprising the same |
-
2006
- 2006-09-27 US US11/527,731 patent/US7541603B2/en active Active
-
2007
- 2007-09-19 TW TW096134960A patent/TWI371663B/zh active
- 2007-09-19 TW TW101123937A patent/TWI485532B/zh active
- 2007-09-25 JP JP2009530300A patent/JP5208119B2/ja active Active
- 2007-09-25 SG SG201103036-8A patent/SG171633A1/en unknown
- 2007-09-25 EP EP07808590A patent/EP2082289A2/en not_active Withdrawn
- 2007-09-25 KR KR1020097006350A patent/KR101151769B1/ko active IP Right Grant
- 2007-09-25 WO PCT/NL2007/050466 patent/WO2008039068A2/en active Application Filing
- 2007-09-25 CN CN2007800355990A patent/CN101583909B/zh active Active
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2009
- 2009-05-13 US US12/465,118 patent/US7863591B2/en active Active
-
2011
- 2011-07-25 JP JP2011162445A patent/JP5496964B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2008039068A3 (en) | 2008-08-14 |
WO2008039068A2 (en) | 2008-04-03 |
US7541603B2 (en) | 2009-06-02 |
CN101583909A (zh) | 2009-11-18 |
CN101583909B (zh) | 2011-07-20 |
SG171633A1 (en) | 2011-06-29 |
US7863591B2 (en) | 2011-01-04 |
TWI371663B (en) | 2012-09-01 |
TWI485532B (zh) | 2015-05-21 |
KR20090074170A (ko) | 2009-07-06 |
US20090309048A1 (en) | 2009-12-17 |
US20080074655A1 (en) | 2008-03-27 |
TW200821771A (en) | 2008-05-16 |
TW201243520A (en) | 2012-11-01 |
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JP2011228742A (ja) | 2011-11-10 |
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