TWI305296B - Systems and methods for reducing the influence of plasma-generated debris on the internal components of an euv light source - Google Patents

Description

1305296 IX. Description of the invention: <Related application> This application is filed on November 1, 2004, N. 10/979945, US Patent Application, "Extreme Ultraviolet Light Source for Laser Plasma, (Author Part 5: ^^0·2004_0088_〇1) Part of the follow-up application; also applied for the U.S. patent application No. 10/900839, filed July 27, 2004, "Extreme Ultraviolet Light Source" (Attorney No. N〇. Part of the follow-up application of 2004-0044-01); also applied to the U.S. Patent Application Serial No. 10/803,526, filed on Mar. Part of the follow-up application of the agent number No_ 2003-0125-01); also applied to the US Patent Application No. 10/798,740, filed on March 10, 2004, "Extreme Ultraviolet Light Collector" (Attorney No. N〇. Part of the follow-up application of 2003-0083-01); the contents of the cases are attached herewith. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an extreme ultraviolet C' EUV" light generator that can provide EUV light from a plasma formed from a source material and collect and direct it to a focus for The application of the EUV light source outside the chamber is used, for example, by a photolithography method for manufacturing a semiconductor integrated circuit at a wavelength of about 20 5 〇 11111 or less. L Prior Art 1 Background of the Invention Extreme E-mail ("EUV") Light, such as 1305296 magnetic radiation (sometimes referred to as soft X-ray) with a wavelength of about 5 〇 nm or less, can be used ☆ very fine features in the photolithography process and contain wavelengths of about 13.5 nm. Light, made in a substrate (such as Shi Xi Wa Wa)

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Including: but: limited to: the material is converted to EUV · ^ has - in, for example, L or tin, and in the method, the electric excitation is usually called discharge to make electricity. In another - In the method, the electropolymerization required to discharge between the electrodes is generated by - laser beam irradiation - the material droplets, streams, clusters, etc. having the emission elements of the f line The system of manufacture is called laser-made plasma ("LPP"). In these processes, the electricity is typically produced in a sealed container, such as a real-life chamber, and monitored using various metering devices. In addition to producing cis-radiation, these processes typically also produce unwanted by-products in the plasma chamber, including heat, energetic ions, and emissions from the plasma formation, such as where the source material is not Fully ionized atoms and/or agglomerates during plasma generation. The by-products of ...11 & (4) may impair or reduce the operational efficiency of various plasma chambers to photonics, including but not limited to collection mirrors, 3 multilayer mirrors (MLM's) are able to reflect normal incident EUV light, and sweep angle The surface of the mirror, 4 gauges, the image of the plasma process window and the laser input window (at the LPP). The heat, high energy ions and / or source material can be ▲ There are many ways to damage the filament elements, including: heating them 'to coat them with reduced light transmission, to penetrate them, and to compromise structural integrity and/or optical properties, for example - mirror reflection 20 1305296 The ability of the very short wavelength light to erode and/or diffuse out of it, and some optical components, such as the laser input window, will also be part of the chamber, so when a vacuum exists in the The actual working cavity of the electric paddle will be at a time when the λα ratio & is inside; in the case of a stress, for these components, the deposit enthalpy may combine to cause it to rupture (ie cause cracks), so The Panyu vacuum requires expensive repairs. It is expensive, labor intensive and time consuming to enter the clean or replace the contaminated or damaged cells. These systems are Usually after the plasma chamber is opened, it is re Before the move, 10 must be quite complicated and time-consuming to clean up and the evacuation of the plasma chamber. This lengthy procedure will negatively affect the production schedule and reduce the overall efficiency of the light source, which is typically expected to be Or there is only a small amount of downtime. As can be seen from the above situation, the present application discloses a system and method for reducing the influence of debris generated by electropolymerization on internal components of an EUV light source. 15 [Summary of the Invention] For the E4, the EUV light source that generates debris due to the formation of electricity 1. The monitor will contain a - ray detector; - the component can pass; In the detector, the component is disposed at a position where the genus generated by the electropolymer is deposited on the component; and -, and, for example, heating the 7L member to a temperature sufficient to remove at least a portion of the component Deposition of debris. In another embodiment of the invention, a device is disclosed to remove debris from the electropolymerization by the EUV source collection mirror. For this device, the receiver 1305296 will be positioned relative to a plasma formation site and will result in different debris deposition rates in different regions of the collection mirror. The apparatus can include a first heating system capable of heating the first region of the collection mirror to a first temperature to remove debris therefrom; and a second heating system to heat the second region of the collection mirror 5 To a second temperature T2 to remove debris therefrom, and the τ > τ2. In yet another embodiment of the present invention, a system is disclosed that protects the surface of the EUV source detector from debris generated by plasma. The system can include at least one hollow tube having a tube wall surrounding a lumen, the tube 10 being disposed between a plasma forming portion and the detector surface and oriented to block at least a portion Debris directed to the surface of the detector to reach the surface, and at least a portion of the light energy generated at the plasma forming portion is passed through the lumen to reach the surface of the detector; and a heater can heat the surface The wall of the tube removes debris deposited on it. In one embodiment of the invention, a collection mirror system is disclosed for use with an EUV source that produces Li debris due to the formation of plasma. The collection mirror system may include a source of hydrogen coupled to the Li crumb to form Li on the surface of one of the collectors; and a sputtering system capable of directing the sputter molecules to the surface of the collector by the collector The surface is splashed with LiH. In another embodiment of the invention, a device is disclosed that is capable of collecting debris on the surface of a mirror by an EUV source at a controlled plasma etch rate. The system will include a plasma etching system capable of recording debris, and the etching system has at least one controllable parameter capable of changing a plasma etch rate; a reference material having a surface configured to receive substantially equivalent to The accumulation of debris in at least the region of the surface of the 1305296 2 mirror. An instrument can extract the emitted electrons from the surface of the reference material, and produce an output display of the cumulative amount of the material on the surface of the reference material. ; and - the controller can return ~ 'in the change (four) change - paste rate parameter to control the electrical scribe rate. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic diagram showing the overall concept of a laser EUV light source according to the invention.

10 15 Figure 2 shows a side view of the _ m ^ _ ^ thief system embodiment, which protects the electric water to the optical 70 pieces from the destruction of the plasma source material; A side view of the tube showing a path of light passing through the middle g and a fragment of the particle being captured by the hollow tube; Fig. 4 is a schematic cross-sectional view of the embodiment, with an EUV metering The monitor is used to heat a filter to remove the deposited electropolymer to generate debris; FIG. 5 is a schematic cross-sectional view of another embodiment of the present invention, in which an EUV metering monitor is sentenced

Tis—The heater can heat a multilayer mirror to remove the deposited plasma to generate debris; Figure 6 shows the concept of a daily embodiment of the road, where different areas of a collection mirror will be Different etch rates of „.j are used to etch away the debris generated by the plasma. Figure 7 shows the concept of the invention. The concept of a collection mirror will be at different m rates. Age-removed plasma generated debris; and the younger brother 8 shows that the present invention can be controlled by a controlled enthalpy, and the A-Board 5 has an electro-etching rate to collect the mirror from an Euv light source. 20 13〇5296 The surface name is broken. t Embodiment: j Detailed description of the preferred embodiment 10 15 20 Please refer to Figure 1 for the consistent invention of the invention ~ _ π v light source 'such as a thunder A schematic diagram of the shot into a plasma EUV source 20. Although the concept of this bamboo shoot is described by a laser made of laser (LPP), it should be understood that the invention is equally applicable to other types of electricity. The source of the slurry, including a plasma made by electrical discharge ("DPP"), a representative structure of which is revealed In the U.S. Patent No. 6,815,700, the entire disclosure of which is incorporated herein by reference in its entirety in its entirety in its entirety, in its entirety, the LLP source 20 can include a pulsed laser system 22, such as a gas operating at high power and high pulse repetition rates. Discharge quasi-eight or molecular fluorine lasers, and may be a "ΜΟΡΑ" type of laser system, such as those shown in U.S. Patent Nos. 6,625,191, 6,,,,,,,,, For example, it can be rotated into a wide drop, a liquid stream, a solid particle or a mass, and a granular material contained in a droplet or a liquid stream. The wire can be transported by the 1% system 24 to a cavity to 26 The internal plasma is formed at the location 28. 1 If a laser pulse is transmitted by the laser system 22 along the laser beam passing through a laser wheel, the portion of the chamber is delivered to the portion of the chamber. To form a plasma, it has certain characteristics depending on the = focus. These characteristics may include the wavelength of the light to be formed, and the type and amount of debris released by the material. The light source may also comprise a collector 3〇, for example, a truncated reflection ϋ Light passes through to the position 10 of the 1 10 305 296. The collector 30 can be, for example, an elliptical mirror that will have a first focus ' at the excitation site 28 and a second focus position at a so-called intermediate point 4 〇 (also referred to as intermediate focus 40) where the EUV light is output by the light source and input, for example, into an integrated circuit lithography tool (not shown).

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The pulse system 22 can include a chamber, such as a main vibrating power amplifier ("ΜΟΡΑ") gas discharge laser system having an oscillator laser system 44 and an amplifier laser system 48, and A pulse compression and timing circuit 50 having a magnetic reactor switching is available for the oscillator laser system 44, and a pulse compression and timing circuit 52 for switching the magnetic reactor for the amplifier laser system 48, and The oscillator laser system 44 has a pulse power point monitor (four) system 54, and the amplification | | laser system lazy pulse power time point monitoring system 56. The system 20 can also include an _EUV source control system 60, which can also include, for example, a county position detection inverse (four) system 62 and a _ emission control system 65, and a laser beam positioning system 66. ^尔,;^ 'knife 匕έ 标 — target position detection system, which may include - or a plurality of liquid _ like H 7 〇 can provide - mark minus _ output indication for the position of the excitation site, and output this Provided to the dry position detection feedback system, which can calculate the position and the track of the index, and enable the dry error to be calculated accordingly, and if not based on the basis of the drop by volume, the method will be averaged. The county error 嗣 can be provided as an input to the system control (10), which can provide, for example, a laser position, a direction, and a point correction signal to the laser beam positioning system, so that the (four) secret _ to control the laser timing circuit And/or controlling the laser position and direction changer to change the focus to a different excitation point 28. 11 1305296 The target delivery control system 9 is a release from the system controller 60. The release of the micro-transfer mechanism % is corrected. ^ The error of the label drop reaches the 24 position 28. - Shun light source detection (4) 丨 _ can provide reverse age (four) unified control (four) 6Q, which will, for example, out of the time and focus of the laser pulse, etc., to properly correct the remaining droplets to the positive phase position and time, In order to efficiently and efficiently generate EUV light. As shown in FIG. 1 and as described in more detail below, embodiments of the present invention may include a shielding system 1 2 that protects the surface 10 of the optical component of the electrical enclosure from the plasma formation site 28 The resulting shredded damage. Although the shield system 102 is protected from the surface of an Euv source detector, it is understood that the shield system 102 can also be used to protect other optical components within the chamber 26. Figure 2 shows the system 1 更 2 in more detail, which protects an optical element 15 such as the surface 1 〇 4 of the EUV source detector 100 from debris generated by the plasma. As shown, the system 1〇2 will contain a plurality of hollow tubes 26, such as the illustrated capillary tubes, each of which has a tube wall surrounding a lumen (i.e., an internal bore). The tubes 126 may be made of, for example, glass, metal or ceramic, such as a borosilicate material, and reflect EUV light at an incident sweep angle, such as a small 20 sweeping angle of incidence (<10°). The incident reflection, while the smooth surface of most materials has a higher EUV reflectivity. As shown, the tubes 126 can be bundled together and housed within a stainless steel tube 128 that is shaped like the tubes 126. In one embodiment, about 50 curved glass capillary tubes 126 (lmm outer diameter, 0.78 mm inner diameter ' and 150 mm long) can be mounted inside a curved stainless steel tube 12 -1305296 128. As shown in Fig. 3, the tubes 126 are shaped to have a midsection 130 laterally biased away from a tube axis 132 defined by the two tube ends 134,136. In other words, the middle section 130 is offset by a distance 138 that is greater than the inner diameter of the tube 126. 5 帛 3 (4), etc. f 126 may be interposed between the plasma forming portion 28 and the detector surface 104. Figure 3 also shows an exemplary EUV light grip 14", with a crumb particle diameter 142. As shown, the Ew light will reach the surface 1〇4 through a lumen (ie, an inner hole) after being reflected by the inner wall surface of the tube φ 126 or a plurality of small angles. . In contrast, as shown in Fig. 1, the debris particles will hit the inner wall of the hollow tube and stick to the inner wall. Moreover, in some cases, the shreds accumulated on the inner wall will cause the surface # to be smooth enough to properly reflect the EUV light by sweeping the angle of incidence. These fl26s will have the advantage of using a flat mirror to direct light to the detector, since they can direct light to the end of the tube, without the need for complex alignments in the case of heavy mirrors. _ § The material 'This ## 126 can be placed inside the plasma chamber 26 (see Figure 1), and between the plasma forming portion 28 and the optical component, such as the detector, The test is temporarily deposited in each tube! 26 on the inner wall surface. As shown, the detector (10) can include a plurality or a plurality of thin films 2, 146, a multilayer mirror 148, and a photodiode detector 150. Referring again to FIG. 2, the system 1 〇 2 may include a heater 154 to heat the portions of the tubes 126 or, in some cases, the tubes may be heated as a whole to a level sufficient to remove at least one The temperature of some of the deposited debris is removed to remove a portion (or all) of one or more deposits. This heating also smoothes the sinking 13 1305296 deposit and promotes sweeping angle reflection. For example, the heater can heat the tubes 126 to a temperature sufficient to vaporize at least a portion of the deposited material. For a plasma source material comprising Li, the heater 154 can be designed to heat the shield 1 to 8 to about 400 to 550. The range of (: is to evaporate U from the surface of the tube. 5 In some cases, the heater can heat the tubes 126 to a temperature sufficient to cause etching of a deposition material and an injection tube 126. The gas produces a chemical reaction. Figure 2 shows that the system 102 also includes a primary system 144 that releases a surname to each tube 126. As shown, the secondary system 144 can be configured to release an etchant. And passing the detectors 10 0 toward the chambers 2 6 10 through the tubes 126. Suitable etchants can include, but are not limited to, for example, HBr, Br2, Cl2, HC, H2, HCF3, combinations thereof, and the like. A Torr concentration HBr system can be used. For a plasma source material containing Sn, the heater 154 can be designed to heat the tubes 126 (or portions thereof) to about 200~ The I5 temperature range of 350 ° C is used to initiate a reaction between the Sn deposit and one or more gas surnames such as HBr to form a reactant that can be removed from the inner tube wall. Further structural details As shown in Fig. 2, the heater 154 may include a heating element 156 that will be wound in the middle Tube 126, and a current source 158 is capable of transmitting a current through the heating element 156. The heating element 156 is made of a conductive material and can be heated by electrical resistance when current is passed through. The devices of the tubes 126 may include, but are not limited to, radiant heaters, microwave heaters, RF heaters, combinations thereof, etc. Section 4 illustrates another embodiment of the invention, which may include an EUV metering monitor 100' Having a detector 150 capable of measuring an EUV light index, such as pulse 14 1305296 energy or flux. In some cases, the detector may be required to measure a wavelength of about 13.5 nm and a bandwidth of about 2% or more. Small light. For this purpose, light from the EUV source will be filtered first in the monitor 100'. In other words, as shown, the monitor 100' will contain one or more filters. 146a', 5 146b', 146c, 146d, one or more of the CaF2 windows 160a, b, and one or more of the multilayer mirrors 148' are capable of reflecting the normal band of light near 13.5 nm. Please understand the multilayer mirror 148', for example, with alternating layers between MOSi2 and Si The multilayer mirror will absorb light, such as light outside the 2% band centered at 13.5 nm, and thus act as a bandpass filter. Conversely, when there is a 10-caF2 window 160a, b along the path In time, the EUV light will be absorbed, and UV and visible light will be transmitted through the windows 160a, b. Therefore, the CaF2 windows 160a, b can also function as a filter. Similarly, the filters 146a '~d' (which may consist of a thin layer of tantalum) will absorb or reflect visible light and transmit EUV radiation. I5 Figure 4 also shows that the monitor 100' includes a pair of linear motion actuators 162a, b that selectively interpose one or more filters 146a'~d, and 160a, b, etc. Trail 164. The monitor 1' also includes an access aperture 166 and a shutter 168. According to this arrangement, the filters 146a'~d', 160a, b may be poorly exposed to the electrical charge generated by the entry aperture 166 into the monitor 1' to generate debris. In some cases, debris deposits may reduce the operational efficiency of the filters 146a'~d', 160a, b. Therefore, the monitor 1A will include a heater Π0 (which can be a light-emitting heater for the monitor 100' shown) to heat a filter 146a'~d', 160a, b Debris is generated by removing the plasma temporarily deposited thereon. Other means for heating the filters 15 1305296 146a'~d', 160a, b include, but are not limited to, electrical resistance heaters, radiation heaters, microwave heaters, RF heaters, combinations thereof and the like. For a plasma source material comprising Li, the heater 17 can be designed to heat the filters 146a'~d', 160a, b to a temperature range of about 4 〇〇 to 550 ° C. The surface evaporates Li. For the plasma source material containing Sn, the heater 170 can be designed to heat the choppers 146a'~d, 160a, b to a temperature range of about 200 to 325 C to promote the Sn deposit. The reaction with a gas engraving agent such as HBr to cause a reaction product which can be removed from the surface of the filter. The emulsion remnant can be injected directly into the monitor 1 中, the middle 10 or the chamber 26 (see Figure 1). Figure 5 shows a variant implementation of a monitor (generally 1 〇〇 „). As shown, the 'EUV gauge monitor 1 〇〇' will have _ detector 1 to measure EUV light parameters, such as pulses Energy or flux, and will include one or more of the wavers 146a, 146b', 146c", 146d" and 160a', b, etc., of which 15

One or more of 20 may be selectively inserted into the optical path 164. The monitor 1〇〇, will also include one or more multi-layer mirrors 148". It can also be seen that the monitor 1" also includes an access hole 166, and a shutter 168. With this arrangement, the multilayer mirror 148" may be poorly exposed to the electricity generated by the access holes 166 into the monitor 1 to generate debris. In some cases, the debris deposits will be reduced. The operating efficiency of the mirror 148". Thus, the mirror may include a heater 17A, which may be a - resistance plus & π for the illustrated monitor 100', which is mounted on the back of the mirror 148", which can heat the mirror 148 "To remove the electropolymer that is temporarily deposited thereon to generate debris. Other means of heating the mirror 148" may include, but are not limited to, radiant heaters, microwave heaters, RF heaters, and groups thereof. 16 !3〇5296 For a plasma source material containing Li, the heater 17A can be designed to heat the mirror 148" to a temperature range of ~5 来 from the mirror surface 2 lx · for inclusion The plasma source material of Sn, the heater 170, can be designed to heat the mirror 148" to a temperature range of 2 〇〇 32 rc to promote the deposition between the 5 S η deposit and the gas ship _ _ The reaction is caused to cause a reaction product to be removed from the surface of the mirror. The gas engraving agent can be directly injected into the chamber or into the chamber 26 (see Fig. 1). In one embodiment of the invention, as shown in Fig. 1, a Li-containing agent The target material can be used to create a plasma at the plasma formation site 28. With this arrangement, debris containing the 1^1 compound can deposit on the collection mirror 30. Essentially, Li It is a very active material that reacts almost with any contaminants on the surface of the collector, which can cause lithium compounds. Usually, the uncombined can be heated to a higher temperature by the collection mirror 3 (eg Ho~ 450°〇 evaporates. In other words, this temperature can be chosen to ensure that the v-evaporation rate of the u is higher than the deposition rate of Li crumbs. Unfortunately, some lithium compounds are not suitable here. Temperature (i.e., 350 to 450. Evaporation. For example, a compound such as Li2〇 or UAO3 would require a higher evaporation temperature and would not be easily dissipated by the surface of the collector 30. To evaporate the clock compound, the collector should be heated very much. High temperature (above 600~700 °C), which may reduce or destroy a model 20 The reflectivity of the multilayer mirror. Therefore, the evaporation and/or splattering of the lithium compound will cause problems. Therefore, Figure 1 shows a hydrogen source 200 (for example, a hydrogen source of one molecule or atom, for example, from a remote treatment). The atomic hydrogen of the plasma source can be configured to inject hydrogen into the chamber 26, which reacts with the inside to produce LiH. A sputtering system 2〇2 can be set by 17 1305296 to generate sputter ions and/or molecules. And directing them to the surface of the collector with sufficient energy to smear LiH. For example, the sputtering system can use cesium or argon as a sputter material to form an RF cleaning plasma, such as capacitively or inductively coupled. As shown, the collector 30 can be RF biased, and can selectively control the ion energy used to bombard debris that has been deposited on the collector 30. Generally, 'LiH is spattered from the collector surface. It will be easier than Li2〇 or Li2C03, and LiH deposits will be more transparent than LiCb. The lasing in this way can be used alone to sputter Li and Li compounds, or combined with heat to evaporate Li and / or electric damage button engraving. 10 Figure 6 shows an embodiment of the invention, which has a mine The shot 300 will be focused on a plasma forming portion 28 in a chamber 26, a collector 30, for example, an elliptical collector having a first focus at or near the plasma formation site, and a first The two focal points are located at an intermediate focus (see Figure )), which will be provided. In this device, debris generated by the plasma may be deposited at different rates on the collection mirror 30 at different rates of 15 For example, more debris may deposit at location 302a and less at location 302b (note that for an elliptical collector, this location 3〇2b is farther away from the plasma than position 3〇2a The portion 28') is formed. Therefore, in the system using the plasma etching to remove the debris from the collector 30 shown in Fig. 6, it is preferable to have a position at the position 3〇2 & The rate of money in the south. (Note: this may continue to etch a portion of the mirror and damage the mirror after the deposited debris has been removed). Therefore, the system will include a plasma etchant source 144, and independently controllable first and second RF power supplies 3〇4a, b, which are respectively connected to individual electrodes via capacitors. 3〇6a, b, as shown. 18 -1305296

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20 Although there are two (four) systems that can be operated in a circular collection area, please understand that more than two (four) systems can also be used, and the use of the rf system is not limited to having any specific shape (four) domain. , for example, the ring shape shown. Suitable sizing agents may include, but are not limited to, for example, Β, HCl, HCF, HCF3, combinations thereof, etc., and non-knocking gases such as argon or helium may also be injected to form an electric charge. As used herein, "electrically-excited" refers to a process that may include the following - or a plurality of (four): "generating a reactant in the electric paddle; 2) diffusing the reactants to the desired The surface of the engraved material (9) adsorbs the reactants on the surface; 4) produces a chemical reaction between the reactants and (4) to be formed to form a volatile by-product; 5) is released from the surface The by-products are discharged; the released by-products are dispersed in a large amount of gas. The embodiment shown in Figure 6 can be used for the label material containing clock, tin, gas and/or other elements. In another embodiment of the invention, different regions of a collector can be heated at different rates. In other words, an etch rate can be very dependent on temperature. For example, using tear and/or call The rate at which tin is shown has been found to depend very much on the extent of the range of 150 to 4 GG ° C. As shown in Fig. 7, the back of an exemplary circular collector 3 〇" is shown, differential Heating can be used by the resistance heating system to form different _ rates for different fields. In other words, each heating system will be connected to a corresponding shaped wire 402a, b. Other types of heaters used to heat different collector zones to different temperatures are not limited to revolving heaters, microwave heaters, RF heaters, and combinations thereof. The embodiment shown in Fig. 7 can be used for a dry material comprising if, tin, antimony and/or 19 - 1305296. Figure 8 illustrates yet another embodiment of the present invention in which a device is provided to erode debris from the surface of the - EUV light (four) assembly at a controlled rate of plasma. The device will contain a reference material, such as a verification plate 700' having a surface system configured to receive a debris deposit equal to the position 7〇2 on the surface of the collector 3''. For example, a very small (about lxlcm) sacrificial verification plate 700 can be placed close to the mlm collection φ 益 30"', which is made of a material having an appropriate guilloche etch rate, such as In or Sb. Etc. In this apparatus, a plasma remnant system can be used to etch debris from the collector 3's and the position 702 at substantially the same rate. As shown, the plasma etch system will include a plasma etchant source 144", and a controllable RF power supply 〇4, coupled to the RF electrode 306 via a capacitor. ° The system further includes a The instrument 704 can analyze the remaining 15 plasma jets from the verification plate 7. For example, the instrument 704 can be a spectrometer. As shown, the .-domain and the 'light-ray, the line can be fined (4) That is, the verification plate 7〇0 is transmitted to the instrument 7〇4. Other suitable techniques for efficiently transmitting the surnamed emitted light from the verification board 700 to the instrument may include a focusing optical element, such as a lens ( Not shown.) In the last name control system: 20 the instrument will generate - output showing the cumulative amount of fragmentation on the verification board 7. The output will be received by the controller 708 and used to change The surname rate is controlled to control the plasma remnant rate. For example, the controller can change the read power or the engraving agent concentration in the chamber 26. To measure the accumulation of debris on the verification plate 70 When measuring, the instrument will remove the spectral intensity of 20 1305296 / inspection board material such as In ^ Sb. If the line strength of the verification material exceeds the highest allowable predetermined value, then the indication is that the residual efficiency exceeds, for example, _ flux. In this case, the RF power or etchant concentration will be controlled. If the intensity of the material of the verification material 5 becomes smaller than the specified minimum value, the indication is that the cleaning ability of the marking agent is insufficient to reach the flux such as, for example, the flux is good. The power or surname concentration will be increased. • The spectral line intensity of the plate material can be used as feedback to control lamp power and/or agent concentration to determine the spectral line intensity of the verification plate material (by H). The instrument 704 is determined to be at a certain level or within a specified range. Alternatively, the spectral intensity of the material should be within a predetermined target value or within a specified range. The above-described embodiments of the present invention should be understood that the above-described embodiments of the present invention are only preferred embodiments, and are not intended to limit the present invention in any way, and in particular, are not intended to limit the present invention. In a particular embodiment. Many φ ^ 修修It is also to be understood that the various embodiments of the present invention are disclosed and are readily apparent to those skilled in the art. The same substance and other corrections are easily known by the person. 20 [Simplified description of the drawings] Fig. 1 is a schematic diagram showing the overall concept of the laser-made EUV light source of the present invention. A side view showing an embodiment of a shielding system that protects the electrical cavity optics from debris from the source material of the plasma source;" 21 1305296 Figure 3 is a side view of a plurality of hollow tubes' Shows a path of light passing through the hollow tube, and - debris particles are captured by a hollow tube; Figure 4 is a schematic cross-sectional view of an embodiment of the invention, wherein an EUV metering monitor will contain - heating To heat a filter to remove the deposited plasma to form debris; Figure 5 is a schematic cross-sectional view of another embodiment of the invention, wherein an EUV metering monitor will include a heater capable of heating a plurality of layers Mirror to remove deposited plasma Figure 6 shows the concept of an embodiment of the invention in which 10 different regions of a collecting mirror are etched at different etch rates to remove debris generated by the plasma; Figure 7 shows another The concept of an embodiment in which different regions of a collection mirror are heated at different rates to remove debris generated by the plasma; and Figure 8 illustrates a concept of yet another embodiment of the present invention in which The device can collect debris from the surface of the mirror by an EUV source at a controlled plasma etch rate. [Description of main component symbols] 20...LPP light source 22...Pulse laser system 24...Billing transfer system 26...chamber 28."Electrical polymerization forming portion 30···Collector 40.·.Intermediate focus 44·· Oscillator Laser System 48...Amplifier Laser System 50...Pulse Compression and Timing Circuit 52...Pulse Compression and Timing Circuit 54...Pulse Power Time Point Monitoring System 56...Pulse Power Time Point Monitoring System 57...Laser Input Window 22 1305296

60...EUV light source control system 62...dry position detection feedback system 65...emission control system 66...laser beam positioning system 68...laser position and direction changer 70...droplet imager 90·.·handle conveying control System 92...bar transport mechanism 100...EUV light source detector 100',100''"_EUV monitor 102...shield system 104...optical element surface 126...hollow tube 128···stainless steel tube 130...middle section 132...tube Shaft 134, 136 · · · Tube end 138 · · · Offset distance 140, 164 · · · Optical path 142 ... Debris line diameter 144 ... Sub-system 146 ... Transit membrane 148 ... Multi-layer mirror 150 ... Photoelectric two body detector 154 170. "Heater 156...Heating element 158...Current source 160 ...CaF2 Window 162...Actuator 166...Inlet hole 168...Shutter 200...Nitrogen source 202... Sputtering system 300...Laser 302,702." Debris deposition location 304...RF power supply 306...RF electrode 400...power supply 402...wire 700...verification board 704...instrument 706...fiber 708...controller 23

Claims (1)

1305296 Patent application No. 94123365, the scope of application for patent modification is 97.09. X. Patent application scope: 10 15 20 1. An EUV metering monitor for an extreme ultraviolet (EUV) light source that generates debris due to the formation of plasma; the monitor comprises: a radiation detector; a component that is translatable to the EUV source Radiating and delivering the filtered radiation to the detector at a location where debris from the formation of the plasma is deposited on the component; and a heater capable of heating the component sufficiently to remove The temperature at which at least a portion of the debris is deposited. 2. The EUV metering monitor of claim 1 wherein the component is a multilayer mirror. 3. The EUV metering monitor of claim 2, wherein the multilayer mirror comprises at least one MoSi layer and a Si layer. 4. The EUV metering monitor of claim 1, wherein the component is a metal box. 5. The EUV metering monitor of claim 4, wherein the metal film contains a fault. 6. The EUV metering monitor of claim 1, wherein the heater is selected from the group consisting of an electric resistance heater, a radiant heater, a radio frequency heating, and a microwave heater. 7. The EUV metering monitor of claim 1, wherein the plasma comprises an electropolymerization forming material, and a residual agent for the electropolymerization forming material is injected into the monitor, and the heater The element is heated to a temperature above 200 ° C to promote a chemical reaction between the deposited S η and the etchant. 8. If the EUV measurement is in accordance with item 7 of the patent application, the electric forming material contains Sn. </ br> </ br> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> </ RTI> <RTIgt; 10 〇. 2 The scope of the patent scope of the first ten-quantity monitor, wherein the electro-convergence = a electrical component forming material, and the heater will heat the component to a temperature of t two to evaporate the deposited electro-magnetization forming material. For example, the tens of metering monitor of claim 10, wherein the electropolymer forming material comprises Li. 15 kinds of secret removal means that the smashing device of the light-collecting mirror 'these swarf mouths form electricity; t is generated, and the collecting mirror is arranged with respect to the electric field forming portion and different regions on the collecting mirror Causing different rates of debris deposition; the device contains: 20 - a first heating system capable of heating the first region of the collecting mirror to a first temperature 除去ι to remove debris of the first region; and a second heating system capable of secondizing the collecting mirror The zone is heated to a temperature of 2 to remove debris from the second zone, and D:2. 13. The device of claim 12, wherein the first heating system comprises a heater selected from the group consisting of a resistive heater, a radiant heater, a radio frequency heater, and a microwave heater. 14. The device of claim 12, wherein the collecting mirror is located in a chamber, and the plasma comprises Sn, and an etchant is injected into the chamber, and the first temperature T! The second temperature A is in the range of 150 to 400 ° C to promote the chemical reaction between the deposited Sn and the etchant. 15. The device of claim 14, wherein the etchant is selected from the group consisting of HBr, Br2, Cl2, HC, H2, combinations thereof, and the like. 16. The device of claim 12, wherein the plasma comprises Li, and wherein the first temperature T! and the second temperature T2 are each greater than 400 ° C to vaporize the deposited Li. 17. A system for protecting the surface of an optical component of an EUV source from debris generated by the plasma, the system comprising: 10 15 A shield comprising at least one hollow tube having a wall surrounding a lumen disposed between a plasma forming portion and the surface of the member and oriented to block at least one portion The debris directed to the surface reaches the surface and allows at least a portion of the light generated at the plasma forming portion to pass through the lumen to reach the surface; and a heater capable of heating the tube wall To remove the debris deposited on it. 18. The system of claim 17, wherein the heater is selected from the group consisting of a resistive heater, a radiant heater, a radio frequency heater, and a microwave heater. 19. The system of claim 17, wherein the plasma comprises a plasma 20 forming material, an etchant for the plasma forming material is introduced into the monitor, and the heater will The element is heated to a temperature above 200 ° C to promote a chemical reaction between the deposited plasma forming material and the etchant. 20. The system of claim 19, wherein the plasma forming material package 26 1305296 Ίο 15 Contains Sn. 21. The system of claim 19, wherein the etchant is selected from the group consisting of HBr, Br2, Cl2, HQ, H2, combinations thereof, and the like. 22. The system of claim 17, wherein the plasma comprises a plasma forming material, and the heater heats the tube wall to a temperature above 400 ° C to evaporate the deposited plasma. material. 23. The system of claim 22, wherein the plasma forming material comprises Li. 24. The system of claim 19, wherein the etchant is directed through the tube away from the detector surface. 25. The system of claim 17, wherein the shield comprises a plurality of hollow tubes, each of the tubes having an internal cavity, and each tube is oriented to be produced at a plasma formation site The light energy reaches the surface of the detector through the inner cavity of each tube, and each of the hollow tubes has a first end and a second end, an inner diameter d, and a straight line is formed from the first end to the second end The tube shaft, and each tube is provided with a middle section between the first end and the second end, and the middle section is laterally offset from the tube axis by an offset distance D, wherein D&gt;d. 26. The system of claim 17, wherein the optical component is selected from the group consisting of: 20 a detector and a display window. 27. A collecting mirror system for an EUV source that produces debris due to the formation of a plasma; the system comprising: a source of hydrogen that can combine with the debris to form a hydride on the surface of the collecting mirror And 27 1305296 5 a sputtering system that directs sputter molecules to the surface of the collecting mirror to scatter the hydride from the surface of the collecting mirror. 28· If the money collection line of item 27 of the scope of claim is included, the shoulders of the towel include Li, and the hydride is LiH. 29. The collection mirror system of claim 27, wherein the hydrogen system is injected with h2. 10 30. The collection mirror system of claim 27, wherein the sputtering system generates an RF signal. 31. If the application of the full-length third item is collected, the sputter molecule contains argon. 32. The collection mirror system of claim 3, wherein the radiant molecule comprises 氦. 33. For the application of the special (4) enclosure of the collection mirror system, the system comprises a multi-layer collection mirror. 15 34. The collecting mirror of claim 33 of claim 4, wherein the mirror comprises at least one MoSi2 layer and one Si layer. 3 5. A device for engraving the debris of a v-light source collecting mirror surface with a controlled plasma engraving rate, the device comprising: 20 a plasma etching system for engraving at least one controllable parameter, The etching system has a function of changing the plasma etching rate; the receiving mirror reference material is located at a position of receiving at least a large amount of debris accumulation on the surface of the collecting mirror, and the instrument is capable of analyzing the material from the reference material Surface emission 28 1305296 10 15 And generating an output to display the amount of accumulated debris on the surface of the reference material; and a controller that can output an output etch rate parameter to control the plasma etch rate. The apparatus of claim 35, wherein the emitter comprises an etched plasma emitter. 37. The device of claim 35, wherein the reference material comprises indium. 38. The device of claim 35, wherein the reference material comprises a record. 39. The device of claim 35, wherein the instrument is a spectrometer. 40. The device of claim 39, wherein the output is the line intensity of the reference material. 41. The device of claim 39, wherein the EUV source causes a tin-containing plasma to produce EUV light, and the output is the ratio of the reference material to the tin line strength. 42. The device of claim 35, wherein the plasma etching system forms an RF plasma and the etch rate parameter is RF power. 20 43. The device of claim 35, further comprising an optical fiber capable of transmitting the projectile to the instrument. 29 1305296 Figure (1). Brief Description: VII. Designated representative map: (1) The designated representative of the case is: (2) The component symbol 20...LPP light source 22...pulse laser system 24·&quot;standard dry conveying system 26...chamber 28 ...plasma forming part 3〇...collector 40...intermediate focus 44...oscillator laser system 48...amplifier laser system 50...pulse compression and timing circuit 52...pulse compression and timing circuit 5:·.pulse power time point monitoring system 56"·Pulse Power Time Point Monitoring System 57···Laser Input Window 60.. EUV Light Source Control System 62··· Target Position Detection Feedback 65.. Launch Control System, System 66···Laser Beam Positioning System 68... laser position and direction change 70... droplet developer. 90... standard dry conveying control system 92... standard dry conveying mechanism 100... EUV light source detector 102... shielding system 200... gas source 202... sputtering system has In the chemical formula, please reveal the chemical formula that best describes the characteristics of the invention: