TWI371663B - Radiation system and lithographic apparatus comprising the same - Google Patents

Radiation system and lithographic apparatus comprising the same

Info

Publication number
TWI371663B
TWI371663B TW096134960A TW96134960A TWI371663B TW I371663 B TWI371663 B TW I371663B TW 096134960 A TW096134960 A TW 096134960A TW 96134960 A TW96134960 A TW 96134960A TW I371663 B TWI371663 B TW I371663B
Authority
TW
Taiwan
Prior art keywords
same
lithographic apparatus
radiation system
radiation
lithographic
Prior art date
Application number
TW096134960A
Other languages
English (en)
Other versions
TW200821771A (en
Inventor
Herpen Maarten Marinus Johannes Wilhelmus Van
Vadim Yevgenyevich Banine
Johannes Christiaan Leonardus Franken
Olav Waldemar Vladimir Frijns
Derk Jan Wilfred Klunder
Niels Machiel Driessen
Wouter Anthon Soer
Original Assignee
Asml Netherlands Bv
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv, Koninkl Philips Electronics Nv filed Critical Asml Netherlands Bv
Publication of TW200821771A publication Critical patent/TW200821771A/zh
Application granted granted Critical
Publication of TWI371663B publication Critical patent/TWI371663B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/01—Arrangements or apparatus for facilitating the optical investigation
    • G01N21/15—Preventing contamination of the components of the optical system or obstruction of the light path

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
TW096134960A 2006-09-27 2007-09-19 Radiation system and lithographic apparatus comprising the same TWI371663B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/527,731 US7541603B2 (en) 2006-09-27 2006-09-27 Radiation system and lithographic apparatus comprising the same

Publications (2)

Publication Number Publication Date
TW200821771A TW200821771A (en) 2008-05-16
TWI371663B true TWI371663B (en) 2012-09-01

Family

ID=39224584

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096134960A TWI371663B (en) 2006-09-27 2007-09-19 Radiation system and lithographic apparatus comprising the same
TW101123937A TWI485532B (zh) 2006-09-27 2007-09-19 輻射系統及包含該輻射系統之微影裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101123937A TWI485532B (zh) 2006-09-27 2007-09-19 輻射系統及包含該輻射系統之微影裝置

Country Status (8)

Country Link
US (2) US7541603B2 (zh)
EP (1) EP2082289A2 (zh)
JP (2) JP5208119B2 (zh)
KR (1) KR101151769B1 (zh)
CN (1) CN101583909B (zh)
SG (1) SG171633A1 (zh)
TW (2) TWI371663B (zh)
WO (1) WO2008039068A2 (zh)

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US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
JP5305568B2 (ja) * 2006-05-22 2013-10-02 株式会社東芝 露光装置及びケミカルフィルタ寿命検知方法
US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same
JP4973425B2 (ja) * 2007-10-03 2012-07-11 ウシオ電機株式会社 極端紫外光光源装置における集光光学手段のクリーニング方法及び極端紫外光光源装置
NL1036832A1 (nl) * 2008-04-15 2009-10-19 Asml Netherlands Bv Lithographic apparatus comprising an internal sensor and a mini-reactor, and method for treating a sensing surface of an internal sensor of a lithographic apparatus.
NL1036803A (nl) * 2008-09-09 2010-03-15 Asml Netherlands Bv Radiation system and lithographic apparatus.
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
KR20120101983A (ko) * 2009-06-30 2012-09-17 에이에스엠엘 네델란즈 비.브이. 스펙트럼 퓨리티 필터, 리소그래피 장치, 및 스펙트럼 퓨리티 필터를 제조하는 방법
NL2007287A (en) 2010-09-14 2012-03-15 Asml Netherlands Bv Correction for flare effects in lithography system.
CN102890423B (zh) * 2011-07-20 2015-07-22 上海微电子装备有限公司 光电探测器校准装置及其校准方法
KR102122484B1 (ko) * 2012-11-15 2020-06-15 에이에스엠엘 네델란즈 비.브이. 리소그래피를 위한 방법 및 방사선 소스
CN103162848A (zh) * 2013-03-27 2013-06-19 哈尔滨工业大学 YAG:Ce荧光屏实现毛细管放电极紫外光刻光源等离子体状态检测系统
US9846365B2 (en) 2013-08-02 2017-12-19 Asml Netherlands B.V. Component for a radiation source, associated radiation source and lithographic apparatus
WO2015165705A1 (en) * 2014-05-01 2015-11-05 Asml Netherlands B.V. Cleaning apparatus and associated low pressure chamber apparatus
WO2016037786A1 (en) * 2014-09-11 2016-03-17 Asml Netherlands B.V. Device for monitoring a radiation source, radiation source, method of monitoring a radiation source, device manufacturing method
KR102410381B1 (ko) * 2015-11-20 2022-06-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법
WO2017187571A1 (ja) * 2016-04-27 2017-11-02 ギガフォトン株式会社 極端紫外光センサユニット及び極端紫外光生成装置
DE102017205452A1 (de) 2017-03-30 2017-06-14 Carl Zeiss Smt Gmbh Debris-Detektor
WO2019115144A1 (en) * 2017-12-15 2019-06-20 Asml Netherlands B.V. Regeneration of a debris flux measurement system in a vacuum vessel
US11307311B2 (en) * 2018-10-23 2022-04-19 Thermo Fisher Scientific Messtechnik Gmbh Gamma ray and neutron dosimeter
US20230259035A1 (en) * 2022-02-11 2023-08-17 Applied Materials, Inc. Characterization of photosensitive materials
EP4312078A1 (en) * 2022-07-29 2024-01-31 ASML Netherlands B.V. Contamination determination
KR102913404B1 (ko) * 2022-08-10 2026-01-20 전남대학교산학협력단 적외선 포토마스크 기반 극자외선 노광 장치 및 방법
CN115424920A (zh) * 2022-09-23 2022-12-02 洛玛瑞芯片技术常州有限公司 一种高结晶钛酸钡薄膜、制备方法及应用

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US4692884A (en) * 1983-01-03 1987-09-08 Diffracto, Ltd. Remote operation of optical system
AT381795B (de) * 1984-05-08 1986-11-25 Voest Alpine Ag Vorrichtung zum reinigen eines lanzenkopfes einer in ein metallurgisches gefaess einbringbaren lanze
JP2000349009A (ja) * 1999-06-04 2000-12-15 Nikon Corp 露光方法及び装置
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
JP3069700B1 (ja) * 1999-07-22 2000-07-24 静岡大学長 放電容器及びその放電容器を備えたプラズマラジカル生成装置
DE60116967T2 (de) * 2000-08-25 2006-09-21 Asml Netherlands B.V. Lithographischer Apparat
DE60118669T2 (de) * 2000-08-25 2007-01-11 Asml Netherlands B.V. Lithographischer Projektionsapparat
JP3564104B2 (ja) 2002-01-29 2004-09-08 キヤノン株式会社 露光装置及びその制御方法、これを用いたデバイスの製造方法
DE10205189B4 (de) * 2002-02-06 2012-06-28 Xtreme Technologies Gmbh Verfahren zur Erzeugung von extrem ultravioletter Strahlung auf Basis eines strahlungsemittierenden Plasmas
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EP1526550A1 (en) * 2003-10-20 2005-04-27 ASML Netherlands B.V. Mirror for use in a lithographic apparatus, lithographic apparatus comprising such a mirror and device manufacturing method
US20050173647A1 (en) * 2003-11-07 2005-08-11 Asml Netherlands B.V. Radiation detector assembly, lithographic apparatus, method of determining an amount of radiation, an intensity of the amount of radiation, or an amount of contamination of an optical element, device manufacturing method, and device manufactured thereby
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KR20070054716A (ko) * 2004-09-30 2007-05-29 어드밴스드 마이크로 디바이시즈, 인코포레이티드 리소그래피 노광 툴에서의 오염 검출 및 모니터링 방법 및시스템, 그리고 제어되는 대기 상태들 하에서 이를동작하는 방법
DE102004047677B4 (de) * 2004-09-30 2007-06-21 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System für die Kontaminationserkennung und Überwachung in einer Lithographiebelichtungsanlage und Verfahren zum Betreiben der gleichen unter gesteuerten atomsphärischen Bedingungen
US7355672B2 (en) * 2004-10-04 2008-04-08 Asml Netherlands B.V. Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus
US7750326B2 (en) * 2005-06-13 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and cleaning method therefor
US7372049B2 (en) 2005-12-02 2008-05-13 Asml Netherlands B.V. Lithographic apparatus including a cleaning device and method for cleaning an optical element
US7541603B2 (en) * 2006-09-27 2009-06-02 Asml Netherlands B.V. Radiation system and lithographic apparatus comprising the same

Also Published As

Publication number Publication date
EP2082289A2 (en) 2009-07-29
JP2010505261A (ja) 2010-02-18
SG171633A1 (en) 2011-06-29
US20090309048A1 (en) 2009-12-17
US7863591B2 (en) 2011-01-04
TWI485532B (zh) 2015-05-21
JP5496964B2 (ja) 2014-05-21
TW200821771A (en) 2008-05-16
KR20090074170A (ko) 2009-07-06
US7541603B2 (en) 2009-06-02
JP5208119B2 (ja) 2013-06-12
WO2008039068A2 (en) 2008-04-03
US20080074655A1 (en) 2008-03-27
CN101583909A (zh) 2009-11-18
JP2011228742A (ja) 2011-11-10
WO2008039068A3 (en) 2008-08-14
KR101151769B1 (ko) 2012-06-15
TW201243520A (en) 2012-11-01
CN101583909B (zh) 2011-07-20

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