SG162725A1 - Copper passivating post-chemical mechanical polishing cleaning composition and method of use - Google Patents

Copper passivating post-chemical mechanical polishing cleaning composition and method of use

Info

Publication number
SG162725A1
SG162725A1 SG201003670-5A SG2010036705A SG162725A1 SG 162725 A1 SG162725 A1 SG 162725A1 SG 2010036705 A SG2010036705 A SG 2010036705A SG 162725 A1 SG162725 A1 SG 162725A1
Authority
SG
Singapore
Prior art keywords
mechanical polishing
chemical mechanical
residue
post
cleaning composition
Prior art date
Application number
SG201003670-5A
Other languages
English (en)
Inventor
Jeffrey Barnes
Elizabeth Walker
Darryl W Peters
Kyle Bartosh
Ewa Oldak
Kevin P Yanders
Original Assignee
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Tech Materials filed Critical Advanced Tech Materials
Publication of SG162725A1 publication Critical patent/SG162725A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
SG201003670-5A 2005-05-26 2006-05-25 Copper passivating post-chemical mechanical polishing cleaning composition and method of use SG162725A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68481205P 2005-05-26 2005-05-26
US73603605P 2005-11-10 2005-11-10
US77312606P 2006-02-13 2006-02-13

Publications (1)

Publication Number Publication Date
SG162725A1 true SG162725A1 (en) 2010-07-29

Family

ID=37452361

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201003670-5A SG162725A1 (en) 2005-05-26 2006-05-25 Copper passivating post-chemical mechanical polishing cleaning composition and method of use

Country Status (7)

Country Link
EP (1) EP1888735B1 (fr)
JP (1) JP2008543060A (fr)
KR (1) KR20080025697A (fr)
IL (1) IL187566A0 (fr)
SG (1) SG162725A1 (fr)
TW (3) TWI576428B (fr)
WO (1) WO2006127885A1 (fr)

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US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
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JP5808649B2 (ja) * 2010-11-12 2015-11-10 三洋化成工業株式会社 電子材料用洗浄剤
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WO2012127336A1 (fr) 2011-03-21 2012-09-27 Basf Se Composition de nettoyage aqueuse sans azote, sa préparation et son utilisation
CN102304327A (zh) * 2011-07-05 2012-01-04 复旦大学 一种基于金属Co的抛光工艺的抛光液
JP6066552B2 (ja) 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
JP2015519723A (ja) * 2012-03-18 2015-07-09 インテグリス，インコーポレイテッド バリア層との適合性および洗浄性能が改良されたｃｍｐ後配合物
KR101406761B1 (ko) * 2012-10-22 2014-07-02 주식회사 케이씨텍 세정액 조성물 및 이를 이용한 세정방법
US9765288B2 (en) 2012-12-05 2017-09-19 Entegris, Inc. Compositions for cleaning III-V semiconductor materials and methods of using same
WO2014138064A1 (fr) 2013-03-04 2014-09-12 Advanced Technology Materials, Inc. Compositions et procédés pour graver sélectivement du nitrure de titane
JP6203525B2 (ja) * 2013-04-19 2017-09-27 関東化學株式会社 洗浄液組成物
SG11201509933QA (en) 2013-06-06 2016-01-28 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN105431506A (zh) 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
SG11201601158VA (en) 2013-08-30 2016-03-30 Advanced Tech Materials Compositions and methods for selectively etching titanium nitride
CN110225667B (zh) * 2013-09-11 2023-01-10 花王株式会社 树脂掩模层用洗涤剂组合物及电路基板的制造方法
EP3051577B1 (fr) 2013-11-08 2017-10-18 Wako Pure Chemical Industries, Ltd. Agent de nettoyage pour substrats semi-conducteurs et procédé de traitement d'une surface de substrat semi-conducteur
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
WO2015095726A1 (fr) 2013-12-20 2015-06-25 Entegris, Inc. Utilisation d'acides forts non oxydants pour l'élimination de photorésine implantée par des ions
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
US20160340620A1 (en) * 2014-01-29 2016-11-24 Advanced Technology Materials, Inc. Post chemical mechanical polishing formulations and method of use
WO2015119925A1 (fr) 2014-02-05 2015-08-13 Advanced Technology Materials, Inc. Compositions post-cmp sans amine et leur méthode d'utilisation
KR102420338B1 (ko) * 2014-06-04 2022-07-13 엔테그리스, 아이엔씨. 금속, 유전체 및 니트라이드 상용성을 가진 반사-방지 코팅 세정 및 에칭-후 잔류물 제거 조성물
JP6445570B2 (ja) 2014-08-29 2018-12-26 国立研究開発法人産業技術総合研究所 デバイス固有情報の誤り率制御方法とデバイス固有情報の誤り率制御プログラム
CN117625325A (zh) * 2015-01-13 2024-03-01 Cmc材料股份有限公司 用于在化学机械抛光后清洁半导体晶片的清洁组合物及方法
JP2017011225A (ja) * 2015-06-25 2017-01-12 株式会社フジミインコーポレーテッド 研磨方法及び不純物除去用組成物並びに基板及びその製造方法
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same
JP2018026461A (ja) * 2016-08-10 2018-02-15 株式会社荏原製作所 化学機械研磨後の基板洗浄技術
JP7156266B2 (ja) 2017-03-17 2022-10-19 三菱ケミカル株式会社 半導体デバイス用基板の洗浄剤組成物、半導体デバイス用基板の洗浄方法、半導体デバイス用基板の製造方法及び半導体デバイス用基板
TWI808159B (zh) * 2018-04-26 2023-07-11 日商三菱瓦斯化學股份有限公司 樹脂組成物、疊層體、附樹脂組成物層之半導體晶圓、附樹脂組成物層之半導體搭載用基板、以及半導體裝置
JP7220040B2 (ja) * 2018-09-20 2023-02-09 関東化学株式会社 洗浄液組成物
CN113774391B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种化学机械抛光后清洗液的应用
CN113774392B (zh) * 2021-08-12 2023-12-01 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
CN113774390B (zh) * 2021-08-12 2023-08-04 上海新阳半导体材料股份有限公司 一种用于化学机械抛光后的清洗液及其制备方法
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Also Published As

Publication number Publication date
EP1888735A4 (fr) 2011-01-19
TW201329225A (zh) 2013-07-16
JP2008543060A (ja) 2008-11-27
TW201600594A (zh) 2016-01-01
TWI576428B (zh) 2017-04-01
WO2006127885A1 (fr) 2006-11-30
IL187566A0 (en) 2008-03-20
EP1888735B1 (fr) 2013-08-07
TWI418622B (zh) 2013-12-11
EP1888735A1 (fr) 2008-02-20
TW200712198A (en) 2007-04-01
TWI507521B (zh) 2015-11-11
KR20080025697A (ko) 2008-03-21

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