SG159469A1 - Method for producing a semiconductor wafer - Google Patents
Method for producing a semiconductor waferInfo
- Publication number
- SG159469A1 SG159469A1 SG200905511-2A SG2009055112A SG159469A1 SG 159469 A1 SG159469 A1 SG 159469A1 SG 2009055112 A SG2009055112 A SG 2009055112A SG 159469 A1 SG159469 A1 SG 159469A1
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor wafer
- producing
- polishing
- carrier
- thickness
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008044646A DE102008044646B4 (de) | 2008-08-27 | 2008-08-27 | Verfahren zur Herstellung einer Halbleiterscheibe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG159469A1 true SG159469A1 (en) | 2010-03-30 |
Family
ID=41693610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200905511-2A SG159469A1 (en) | 2008-08-27 | 2009-08-18 | Method for producing a semiconductor wafer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8242020B2 (de) |
| JP (1) | JP5167207B2 (de) |
| KR (1) | KR101062254B1 (de) |
| CN (1) | CN101659027A (de) |
| DE (1) | DE102008044646B4 (de) |
| SG (1) | SG159469A1 (de) |
| TW (1) | TWI399804B (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8952496B2 (en) * | 2009-12-24 | 2015-02-10 | Sumco Corporation | Semiconductor wafer and method of producing same |
| CN101829946B (zh) * | 2010-05-28 | 2013-01-09 | 江苏南晶红外光学仪器有限公司 | 红外窗口片的双面加工工艺 |
| US9588441B2 (en) * | 2012-05-18 | 2017-03-07 | Kla-Tencor Corporation | Method and device for using substrate geometry to determine optimum substrate analysis sampling |
| JP6451825B1 (ja) * | 2017-12-25 | 2019-01-16 | 株式会社Sumco | ウェーハの両面研磨方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG54606A1 (en) | 1996-12-05 | 1998-11-16 | Fujimi Inc | Polishing composition |
| JPH11347926A (ja) * | 1998-06-10 | 1999-12-21 | Memc Kk | シリコンウエハのラッピング方法 |
| JP3810588B2 (ja) | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6299514B1 (en) | 1999-03-13 | 2001-10-09 | Peter Wolters Werkzeugmachinen Gmbh | Double-disk polishing machine, particularly for tooling semiconductor wafers |
| DE10007390B4 (de) | 1999-03-13 | 2008-11-13 | Peter Wolters Gmbh | Zweischeiben-Poliermaschine, insbesondere zur Bearbeitung von Halbleiterwafern |
| DE19938340C1 (de) | 1999-08-13 | 2001-02-15 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
| DE10012840C2 (de) * | 2000-03-16 | 2001-08-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Vielzahl von polierten Halbleiterscheiben |
| DE10046933C2 (de) | 2000-09-21 | 2002-08-29 | Wacker Siltronic Halbleitermat | Verfahren zur Politur von Siliciumscheiben |
| DE10058305A1 (de) * | 2000-11-24 | 2002-06-06 | Wacker Siltronic Halbleitermat | Verfahren zur Oberflächenpolitur von Siliciumscheiben |
| JP4212861B2 (ja) * | 2002-09-30 | 2009-01-21 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いたシリコンウエハの研磨方法、並びにリンス用組成物及びそれを用いたシリコンウエハのリンス方法 |
| US7008308B2 (en) * | 2003-05-20 | 2006-03-07 | Memc Electronic Materials, Inc. | Wafer carrier |
| KR100511943B1 (ko) * | 2003-05-22 | 2005-09-01 | 한화석유화학 주식회사 | 화학·기계 연마용 산화세륨 초미립자 농축액 및 이의제조방법 |
| JP4352229B2 (ja) * | 2003-11-20 | 2009-10-28 | 信越半導体株式会社 | 半導体ウェーハの両面研磨方法 |
| JP2005254401A (ja) * | 2004-03-12 | 2005-09-22 | Seiko Epson Corp | 研磨布、研磨布の製造方法、研磨装置及び半導体装置の製造方法 |
| US7393790B2 (en) * | 2004-09-10 | 2008-07-01 | Cree, Inc. | Method of manufacturing carrier wafer and resulting carrier wafer structures |
| JP2007214205A (ja) * | 2006-02-07 | 2007-08-23 | Fujimi Inc | 研磨用組成物 |
| DE102006044367B4 (de) | 2006-09-20 | 2011-07-14 | Siltronic AG, 81737 | Verfahren zum Polieren einer Halbleiterscheibe und eine nach dem Verfahren herstellbare polierte Halbleiterscheibe |
| JP5060755B2 (ja) * | 2006-09-29 | 2012-10-31 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | 半導体ウェハの粗研磨方法、及び半導体ウェハの研磨装置 |
-
2008
- 2008-08-27 DE DE102008044646A patent/DE102008044646B4/de active Active
-
2009
- 2009-07-13 JP JP2009164436A patent/JP5167207B2/ja active Active
- 2009-07-30 KR KR1020090070077A patent/KR101062254B1/ko active IP Right Grant
- 2009-08-18 SG SG200905511-2A patent/SG159469A1/en unknown
- 2009-08-21 TW TW098128183A patent/TWI399804B/zh active
- 2009-08-26 US US12/547,749 patent/US8242020B2/en active Active
- 2009-08-27 CN CN200910168313A patent/CN101659027A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010056530A (ja) | 2010-03-11 |
| DE102008044646B4 (de) | 2011-06-22 |
| CN101659027A (zh) | 2010-03-03 |
| KR101062254B1 (ko) | 2011-09-06 |
| US8242020B2 (en) | 2012-08-14 |
| DE102008044646A1 (de) | 2010-03-25 |
| US20100055908A1 (en) | 2010-03-04 |
| TWI399804B (zh) | 2013-06-21 |
| TW201009910A (en) | 2010-03-01 |
| JP5167207B2 (ja) | 2013-03-21 |
| KR20100025470A (ko) | 2010-03-09 |
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