SG152042A1 - Method and apparatus for erasing flash memory - Google Patents
Method and apparatus for erasing flash memoryInfo
- Publication number
- SG152042A1 SG152042A1 SG200500538-4A SG2005005384A SG152042A1 SG 152042 A1 SG152042 A1 SG 152042A1 SG 2005005384 A SG2005005384 A SG 2005005384A SG 152042 A1 SG152042 A1 SG 152042A1
- Authority
- SG
- Singapore
- Prior art keywords
- volt
- erase
- gate
- source
- word line
- Prior art date
Links
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 230000007704 transition Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/159,885 US6795348B2 (en) | 2002-05-29 | 2002-05-29 | Method and apparatus for erasing flash memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG152042A1 true SG152042A1 (en) | 2009-05-29 |
Family
ID=29583053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200500538-4A SG152042A1 (en) | 2002-05-29 | 2003-05-29 | Method and apparatus for erasing flash memory |
Country Status (10)
| Country | Link |
|---|---|
| US (15) | US6795348B2 (enExample) |
| EP (1) | EP1552529B1 (enExample) |
| JP (1) | JP4359560B2 (enExample) |
| KR (1) | KR100650088B1 (enExample) |
| CN (1) | CN100495574C (enExample) |
| AT (1) | ATE487219T1 (enExample) |
| AU (1) | AU2003247433A1 (enExample) |
| DE (1) | DE60334828D1 (enExample) |
| SG (1) | SG152042A1 (enExample) |
| WO (1) | WO2003102962A2 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6795348B2 (en) * | 2002-05-29 | 2004-09-21 | Micron Technology, Inc. | Method and apparatus for erasing flash memory |
| US6862216B1 (en) * | 2004-06-29 | 2005-03-01 | National Semiconductor Corporation | Non-volatile memory cell with gated diode and MOS transistor and method for using such cell |
| US7468299B2 (en) * | 2005-08-04 | 2008-12-23 | Macronix International Co., Ltd. | Non-volatile memory cells and methods of manufacturing the same |
| US7236404B2 (en) * | 2005-08-24 | 2007-06-26 | Macronix International Co. Ltd. | Structures and methods for enhancing erase uniformity in an NROM array |
| US20070047327A1 (en) * | 2005-08-31 | 2007-03-01 | Micron Technology, Inc. | Erase method for flash memory |
| US7567458B2 (en) * | 2005-09-26 | 2009-07-28 | Silicon Storage Technology, Inc. | Flash memory array having control/decode circuitry for disabling top gates of defective memory cells |
| US7151712B1 (en) * | 2005-10-19 | 2006-12-19 | Winbond Electronics Corp. | Row decoder with low gate induce drain leakage current |
| KR100704021B1 (ko) * | 2005-11-08 | 2007-04-04 | 삼성전자주식회사 | 신뢰성을 향상시키는 불휘발성 반도체 메모리 장치의데이터 소거방법 |
| US7483311B2 (en) * | 2006-02-07 | 2009-01-27 | Micron Technology, Inc. | Erase operation in a flash memory device |
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| US7778086B2 (en) * | 2007-01-25 | 2010-08-17 | Micron Technology, Inc. | Erase operation control sequencing apparatus, systems, and methods |
| US7656740B2 (en) * | 2007-02-05 | 2010-02-02 | Micron Technology, Inc. | Wordline voltage transfer apparatus, systems, and methods |
| KR101348173B1 (ko) * | 2007-05-25 | 2014-01-08 | 삼성전자주식회사 | 플래시 메모리 장치, 그것의 소거 및 프로그램 방법들,그리고 그것을 포함한 메모리 시스템 |
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| US7619931B2 (en) * | 2007-06-26 | 2009-11-17 | Micron Technology, Inc. | Program-verify method with different read and verify pass-through voltages |
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| US7924623B2 (en) | 2008-05-27 | 2011-04-12 | Micron Technology, Inc. | Method for memory cell erasure with a programming monitor of reference cells |
| US7995384B2 (en) | 2008-08-15 | 2011-08-09 | Macronix International Co., Ltd. | Electrically isolated gated diode nonvolatile memory |
| KR101478554B1 (ko) * | 2008-10-02 | 2015-01-06 | 삼성전자 주식회사 | 오버 슈트 전압의 산출 방법 및 그를 이용한 게이트 절연막열화분석방법 |
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| CN102034539A (zh) * | 2010-10-25 | 2011-04-27 | 上海宏力半导体制造有限公司 | 纳米晶体器件编程/擦除的方法 |
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| US10034578B2 (en) | 2014-08-21 | 2018-07-31 | W.C. Bradley Co. | High performance electric grill, method, and heat radiating module |
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| US10446572B2 (en) | 2017-08-11 | 2019-10-15 | Micron Technology, Inc. | Void formation for charge trap structures |
| US10164009B1 (en) | 2017-08-11 | 2018-12-25 | Micron Technology, Inc. | Memory device including voids between control gates |
| US10796729B2 (en) | 2019-02-05 | 2020-10-06 | Micron Technology, Inc. | Dynamic allocation of a capacitive component in a memory device |
| US11194726B2 (en) | 2019-02-25 | 2021-12-07 | Micron Technology, Inc. | Stacked memory dice for combined access operations |
| KR102680867B1 (ko) | 2019-09-03 | 2024-07-04 | 삼성전자주식회사 | 반도체 장치 및 이의 동작 방법 |
Citations (2)
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2002
- 2002-05-29 US US10/159,885 patent/US6795348B2/en not_active Expired - Lifetime
-
2003
- 2003-05-29 CN CNB038184400A patent/CN100495574C/zh not_active Expired - Fee Related
- 2003-05-29 SG SG200500538-4A patent/SG152042A1/en unknown
- 2003-05-29 WO PCT/US2003/016856 patent/WO2003102962A2/en not_active Ceased
- 2003-05-29 EP EP03756241A patent/EP1552529B1/en not_active Expired - Lifetime
- 2003-05-29 AT AT03756241T patent/ATE487219T1/de not_active IP Right Cessation
- 2003-05-29 KR KR1020047019353A patent/KR100650088B1/ko not_active Expired - Fee Related
- 2003-05-29 DE DE60334828T patent/DE60334828D1/de not_active Expired - Lifetime
- 2003-05-29 JP JP2004509958A patent/JP4359560B2/ja not_active Expired - Fee Related
- 2003-05-29 AU AU2003247433A patent/AU2003247433A1/en not_active Abandoned
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2004
- 2004-06-24 US US10/875,453 patent/US7046557B2/en not_active Expired - Lifetime
- 2004-06-24 US US10/875,452 patent/US7215572B2/en not_active Expired - Lifetime
- 2004-06-24 US US10/876,184 patent/US7099220B2/en not_active Expired - Lifetime
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2005
- 2005-08-31 US US11/215,963 patent/US7203098B2/en not_active Expired - Lifetime
- 2005-08-31 US US11/216,956 patent/US7277327B2/en not_active Expired - Lifetime
- 2005-08-31 US US11/215,969 patent/US7277326B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/217,813 patent/US7099195B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/217,952 patent/US7280395B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/219,020 patent/US7259996B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/218,855 patent/US7057932B2/en not_active Expired - Fee Related
- 2005-09-01 US US11/217,828 patent/US7277328B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/217,825 patent/US7068543B2/en not_active Expired - Fee Related
- 2005-09-01 US US11/217,920 patent/US7272044B2/en not_active Expired - Lifetime
- 2005-09-01 US US11/217,820 patent/US7200048B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903499A (en) * | 1997-09-12 | 1999-05-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to erase a flash EEPROM using negative gate source erase followed by a high negative gate erase |
| US6236608B1 (en) * | 1999-08-16 | 2001-05-22 | Alliance Semiconductor | Technique to improve the source leakage of flash EPROM cells during source erase |
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