SG151079A1 - Improved scattering bar opc application method for sub-half wavelength lithography patterning - Google Patents

Improved scattering bar opc application method for sub-half wavelength lithography patterning

Info

Publication number
SG151079A1
SG151079A1 SG200403807-1A SG2004038071A SG151079A1 SG 151079 A1 SG151079 A1 SG 151079A1 SG 2004038071 A SG2004038071 A SG 2004038071A SG 151079 A1 SG151079 A1 SG 151079A1
Authority
SG
Singapore
Prior art keywords
features
imaged
sub
application method
half wavelength
Prior art date
Application number
SG200403807-1A
Other languages
English (en)
Inventor
Thomas Laidig
Kurt E Wampler
Den Broeke Douglas Van
Jang Fung Chen
Original Assignee
Asml Masktools Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Masktools Bv filed Critical Asml Masktools Bv
Publication of SG151079A1 publication Critical patent/SG151079A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200403807-1A 2003-06-30 2004-06-30 Improved scattering bar opc application method for sub-half wavelength lithography patterning SG151079A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48310503P 2003-06-30 2003-06-30
US50027203P 2003-09-05 2003-09-05

Publications (1)

Publication Number Publication Date
SG151079A1 true SG151079A1 (en) 2009-04-30

Family

ID=33436772

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200403807-1A SG151079A1 (en) 2003-06-30 2004-06-30 Improved scattering bar opc application method for sub-half wavelength lithography patterning

Country Status (7)

Country Link
US (4) US7354681B2 (ja)
EP (1) EP1494071A3 (ja)
JP (1) JP4520787B2 (ja)
KR (2) KR100903176B1 (ja)
CN (1) CN100480860C (ja)
SG (1) SG151079A1 (ja)
TW (1) TWI346250B (ja)

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KR100788372B1 (ko) * 2006-08-07 2008-01-02 동부일렉트로닉스 주식회사 Ｏｐｃ 마스크 패턴
KR100818713B1 (ko) * 2007-03-23 2008-04-02 주식회사 하이닉스반도체 노광 과정 중의 스컴을 억제하는 리소그래피 방법
CN101349861B (zh) * 2007-07-19 2010-09-08 上海华虹Nec电子有限公司 平滑规则式光学临近修正光掩膜图形的方法
CN101382728B (zh) * 2007-09-07 2010-07-28 北京京东方光电科技有限公司 灰阶掩膜版结构
CN101399244B (zh) * 2007-09-26 2011-05-18 力晶半导体股份有限公司 电路结构及用以定义此电路结构的光掩模
CN101452205B (zh) * 2007-11-30 2011-04-20 中芯国际集成电路制造(上海)有限公司 一种散射条生成方法
JP5529391B2 (ja) * 2008-03-21 2014-06-25 ルネサスエレクトロニクス株式会社 ハーフトーン型位相シフトマスク、そのハーフトーン型位相シフトマスクを有する半導体装置の製造装置、およびそのハーフトーン型位相シフトマスクを用いた半導体装置の製造方法
US7910267B1 (en) * 2008-12-12 2011-03-22 Western Digital (Fremont), Llc Method and system for providing optical proximity correction for structures such as a PMR nose
US8015512B2 (en) * 2009-04-30 2011-09-06 Macronix International Co., Ltd. System for designing mask pattern
KR101113326B1 (ko) * 2009-07-01 2012-03-13 주식회사 하이닉스반도체 포토마스크의 보조패턴 형성방법
US8546048B2 (en) 2010-10-29 2013-10-01 Skyworks Solutions, Inc. Forming sloped resist, via, and metal conductor structures using banded reticle structures
US8765329B2 (en) 2010-11-05 2014-07-01 Taiwan Semiconductor Manufacturing Company, Ltd. Sub-resolution rod in the transition region
CN102486606B (zh) * 2010-12-03 2013-03-27 中芯国际集成电路制造(上海)有限公司 光刻方法
US8887106B2 (en) * 2011-12-28 2014-11-11 Taiwan Semiconductor Manufacturing Company, Ltd. Method of generating a bias-adjusted layout design of a conductive feature and method of generating a simulation model of a predefined fabrication process
US9213233B2 (en) * 2013-07-12 2015-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography scattering bar structure and method
KR102305092B1 (ko) 2014-07-16 2021-09-24 삼성전자주식회사 포토리소그래피용 마스크와 그 제조 방법
US10176966B1 (en) 2017-04-13 2019-01-08 Fractilia, Llc Edge detection system
US10522322B2 (en) 2017-04-13 2019-12-31 Fractilia, Llc System and method for generating and analyzing roughness measurements
US11380516B2 (en) 2017-04-13 2022-07-05 Fractilia, Llc System and method for generating and analyzing roughness measurements and their use for process monitoring and control
US11953823B2 (en) * 2018-08-31 2024-04-09 Asml Netherlands B.V. Measurement method and apparatus
CN113050367A (zh) * 2019-12-27 2021-06-29 中芯国际集成电路制造(上海)有限公司 光学邻近效应修正方法和系统、掩膜版及其制备方法
CN117610495B (zh) * 2024-01-23 2024-04-16 合肥晶合集成电路股份有限公司 辅助图形的添加方法

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Also Published As

Publication number Publication date
US20110143268A1 (en) 2011-06-16
EP1494071A3 (en) 2008-04-09
US20050074677A1 (en) 2005-04-07
JP4520787B2 (ja) 2010-08-11
US7485396B2 (en) 2009-02-03
KR20050002641A (ko) 2005-01-07
CN100480860C (zh) 2009-04-22
JP2005031690A (ja) 2005-02-03
KR20080114639A (ko) 2008-12-31
EP1494071A2 (en) 2005-01-05
US20090233186A1 (en) 2009-09-17
CN1577107A (zh) 2005-02-09
TW200508788A (en) 2005-03-01
US7354681B2 (en) 2008-04-08
KR100919858B1 (ko) 2009-09-30
US20080206656A1 (en) 2008-08-28
US8039180B2 (en) 2011-10-18
TWI346250B (en) 2011-08-01
KR100903176B1 (ko) 2009-06-17
US7892707B2 (en) 2011-02-22

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