ITTO20030730A1 - Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist. - Google Patents

Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.

Info

Publication number
ITTO20030730A1
ITTO20030730A1 IT000730A ITTO20030730A ITTO20030730A1 IT TO20030730 A1 ITTO20030730 A1 IT TO20030730A1 IT 000730 A IT000730 A IT 000730A IT TO20030730 A ITTO20030730 A IT TO20030730A IT TO20030730 A1 ITTO20030730 A1 IT TO20030730A1
Authority
IT
Italy
Prior art keywords
sub
complex
procedure
manufacture
combined
Prior art date
Application number
IT000730A
Other languages
English (en)
Inventor
Fabrizio Enzo Di
Rakesh Kumar
Filippo Romanato
Original Assignee
Infm Istituto Naz Per La Fisi Ca Della Mater
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infm Istituto Naz Per La Fisi Ca Della Mater filed Critical Infm Istituto Naz Per La Fisi Ca Della Mater
Priority to IT000730A priority Critical patent/ITTO20030730A1/it
Priority to EP04022611A priority patent/EP1519227B1/en
Priority to ES04022611T priority patent/ES2401642T3/es
Priority to US10/945,897 priority patent/US7588882B2/en
Publication of ITTO20030730A1 publication Critical patent/ITTO20030730A1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
IT000730A 2003-09-23 2003-09-23 Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist. ITTO20030730A1 (it)

Priority Applications (4)

Application Number Priority Date Filing Date Title
IT000730A ITTO20030730A1 (it) 2003-09-23 2003-09-23 Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.
EP04022611A EP1519227B1 (en) 2003-09-23 2004-09-22 Method for fabricating complex three-dimensional structures on the submicrometric scale by combined lithography of two resists
ES04022611T ES2401642T3 (es) 2003-09-23 2004-09-22 Método para fabricar estructuras tridimensionales complejas a escala submicrométrica mediante litografía combinada de dos capas resistentes
US10/945,897 US7588882B2 (en) 2003-09-23 2004-09-22 Method for fabricating complex three-dimensional structures on the submicrometric scale by combined lithography of two resists

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000730A ITTO20030730A1 (it) 2003-09-23 2003-09-23 Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.

Publications (1)

Publication Number Publication Date
ITTO20030730A1 true ITTO20030730A1 (it) 2005-03-24

Family

ID=34179360

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000730A ITTO20030730A1 (it) 2003-09-23 2003-09-23 Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist.

Country Status (4)

Country Link
US (1) US7588882B2 (it)
EP (1) EP1519227B1 (it)
ES (1) ES2401642T3 (it)
IT (1) ITTO20030730A1 (it)

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WO2003071587A1 (en) * 2002-02-15 2003-08-28 University Of Delaware Process for making photonic crystal circuits using an electron beam and ultraviolet lithography combination
US7977032B2 (en) * 2005-02-11 2011-07-12 International Business Machines Corporation Method to create region specific exposure in a layer
FR2903810B1 (fr) * 2006-07-13 2008-10-10 Commissariat Energie Atomique Procede de nanostructuration de la surface d'un substrat
DE102006041774A1 (de) * 2006-09-04 2008-03-20 Forschungszentrum Jülich GmbH Lithographieverfahren zur Herstellung einer Struktur
DE102008006438B4 (de) 2008-01-28 2011-08-25 Carl Zeiss SMT GmbH, 73447 Verfahren und Vorrichtung zum Strukturieren eines strahlungsempfindlichen Materials
US8043794B2 (en) * 2008-02-01 2011-10-25 Qimonda Ag Method of double patterning, method of processing a plurality of semiconductor wafers and semiconductor device
DE102008043324B4 (de) 2008-10-30 2010-11-11 Carl Zeiss Smt Ag Optische Anordnung zur dreidimensionalen Strukturierung einer Materialschicht
JP2012530945A (ja) 2009-06-22 2012-12-06 トラスティーズ オブ プリンストン ユニバーシティ 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料
WO2013055503A1 (en) * 2011-10-14 2013-04-18 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
US11852781B2 (en) 2011-10-14 2023-12-26 The Trustees Of Princeton University Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes
CN104541208B (zh) * 2012-07-09 2019-01-22 株式会社尼康 驱动系统和驱动方法、以及曝光装置和曝光方法
US20170351175A1 (en) * 2015-01-16 2017-12-07 Mercene Labs Ab Synthetic paper
KR101696814B1 (ko) * 2015-12-01 2017-01-24 전남대학교산학협력단 광 리소그래피를 이용한 극저밀도 3차원 박막 격자 구조체 및 그 제조 방법
CN109116454B (zh) * 2017-06-26 2020-08-11 清华大学 光栅的制备方法

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JPS6091639A (ja) * 1983-10-26 1985-05-23 Alps Electric Co Ltd フオトレジストパタ−ンの形成方法
US4567132A (en) * 1984-03-16 1986-01-28 International Business Machines Corporation Multi-level resist image reversal lithography process
EP0269219A2 (en) * 1986-10-03 1988-06-01 Advanced Micro Devices, Inc. Improved photolithography process using two photoresist layers for device fabrication
US4985374A (en) * 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
US5407782A (en) * 1991-09-06 1995-04-18 Kawasaki Steel Corporation Method of forming resist pattern in a multilayer resist
US5719009A (en) 1992-08-07 1998-02-17 E. I. Du Pont De Nemours And Company Laser ablatable photosensitive elements utilized to make flexographic printing plates
US5656414A (en) * 1993-04-23 1997-08-12 Fujitsu Limited Methods of forming tall, high-aspect ratio vias and trenches in photo-imageable materials, photoresist materials, and the like
DE69529316T2 (de) * 1994-07-19 2003-09-04 Canon Kk Wiederaufladbare Batterien mit einer speziellen Anode und Verfahren zu ihrer Herstellung
TW394915B (en) * 1998-07-13 2000-06-21 Acer Display Tech Inc A manufacturing method of front plate of plasma display panel
GB0018629D0 (en) * 2000-07-29 2000-09-13 Secr Defence Process for making a periodic profile
US6690876B2 (en) 2001-06-27 2004-02-10 Agilent Technologies, Inc. Three-dimensional photonic crystal waveguide apparatus
US6653244B2 (en) * 2001-09-19 2003-11-25 Binoptics Corporation Monolithic three-dimensional structures
EP1489460A3 (en) * 2003-06-20 2008-07-09 FUJIFILM Corporation Light-sensitive sheet comprising support, first light-sensitive layer and second light-sensitive layer

Also Published As

Publication number Publication date
EP1519227A2 (en) 2005-03-30
EP1519227B1 (en) 2012-12-19
EP1519227A8 (en) 2005-07-27
US20050064343A1 (en) 2005-03-24
ES2401642T3 (es) 2013-04-23
US7588882B2 (en) 2009-09-15
EP1519227A3 (en) 2008-03-12

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