JP2012530945A - 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 - Google Patents
完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 Download PDFInfo
- Publication number
- JP2012530945A JP2012530945A JP2012516382A JP2012516382A JP2012530945A JP 2012530945 A JP2012530945 A JP 2012530945A JP 2012516382 A JP2012516382 A JP 2012516382A JP 2012516382 A JP2012516382 A JP 2012516382A JP 2012530945 A JP2012530945 A JP 2012530945A
- Authority
- JP
- Japan
- Prior art keywords
- article
- heterostructure
- pattern
- band gap
- super
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims description 68
- 238000000034 method Methods 0.000 claims abstract description 52
- 230000001788 irregular Effects 0.000 claims abstract description 42
- 239000013079 quasicrystal Substances 0.000 claims abstract description 17
- 210000004027 cell Anatomy 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000005484 gravity Effects 0.000 claims description 8
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 claims description 7
- FEPMHVLSLDOMQC-UHFFFAOYSA-N virginiamycin-S1 Natural products CC1OC(=O)C(C=2C=CC=CC=2)NC(=O)C2CC(=O)CCN2C(=O)C(CC=2C=CC=CC=2)N(C)C(=O)C2CCCN2C(=O)C(CC)NC(=O)C1NC(=O)C1=NC=CC=C1O FEPMHVLSLDOMQC-UHFFFAOYSA-N 0.000 claims description 6
- 210000001316 polygonal cell Anatomy 0.000 claims description 5
- 238000005070 sampling Methods 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 230000005418 spin wave Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 30
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 230000001902 propagating effect Effects 0.000 abstract description 2
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 21
- 230000006870 function Effects 0.000 description 19
- 239000004038 photonic crystal Substances 0.000 description 19
- 230000000737 periodic effect Effects 0.000 description 17
- 230000010287 polarization Effects 0.000 description 17
- 239000000203 mixture Substances 0.000 description 14
- 238000013461 design Methods 0.000 description 13
- 239000013598 vector Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000005283 ground state Effects 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000004422 calculation algorithm Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005381 potential energy Methods 0.000 description 4
- 238000013519 translation Methods 0.000 description 4
- 230000014616 translation Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 210000002421 cell wall Anatomy 0.000 description 3
- 238000002939 conjugate gradient method Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000005314 correlation function Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000014509 gene expression Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000005315 distribution function Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000007619 statistical method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000238097 Callinectes sapidus Species 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 241000271897 Viperidae Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008241 heterogeneous mixture Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000036407 pain Effects 0.000 description 1
- 230000037324 pain perception Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002945 steepest descent method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000411 transmission spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K17/00—Measuring quantity of heat
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/0012—Optical design, e.g. procedures, algorithms, optimisation routines
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/30—Polarising elements
- G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0054—Processes for devices with an active region comprising only group IV elements
- H01L33/0058—Processes for devices with an active region comprising only group IV elements comprising amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/4998—Combined manufacture including applying or shaping of fluent material
- Y10T29/49993—Filling of opening
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Combustion & Propulsion (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analytical Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Description
本願で説明した研究は、全米科学財団から助成金番号0606415によって助成されている。アメリカ合衆国政府は、本発明について一定の権利を有する。
I)前記へテロ構造について構造因子を選択するステップと、
II)点の第1点パターンを有する、サイズLのボックスを構成するステップであって、前記点は、並進的に不規則に間隔を空けられており、前記間隔を空けられている点は、平均間隔を有し、前記平均間隔≪Lであるステップと、
)前記第1点パターンからドロネー三価タイルを構成し、各前記タイルについて重心をプロットして重心点パターンを作成するステップと、
IV)前記重心点パターン内の各重心について、前記タイルの最近接部を特定するステップと、
V)複数の線を構成して、各前記近接部内の前記重心を、
(I)前記複数の線は、頂点を有する複数のエッジ又は面を規定し、
(II)前記複数のエッジ又は面は、内部にセル空間を有する超セルを規定し、
(III)各前記超セルは、前記第1点パターンで特異点を包囲する
ように接続するステップと、
VI)前記エッジ又は面及び頂点上に第1材料エレメントを配列し、第2材料エレメントを用いて前記セル空間を満たすステップである。
本発明の種々の実施形態の理解を容易にするために、いくつかの用語(この定義セクションで引用符で強調する場合もある)を以下で定義する。本明細書で定義する用語は(特に指定しない限り)、本発明に関連する分野の当業者に一般に理解される意味を有する。本明細書及び添付する請求項で使用する限り、「一つの」(a, an)及び「その」(the)は、単数形のみを指すが、文脈上そうでないことが示されない限り、説明に使用できる具体例の一般的な集合を含む。本明細書の専門用語は、本発明の特定の実施形態を説明するのに使用するが、特定の用語は、請求項で要点を述べたものを除いて、いずれも本発明を限定するものでない。
一態様において、本発明の実施形態は、エネルギー又はエネルギー量を放出、伝送、増幅、検出及び調節する際に使用する構造を設計する方法を提供する。該方法は、光(即ちフォトン)の量、又はそれに相当する電磁波を放出、伝送、増幅、検出又は調節する構造を設計することに特に適合する。該方法は、フォトン、本願でより適切に言うと電磁波に影響を与える周期性依存構造(例えば結晶)が必要とする精度を有しない組立可能な構造に適用可能である。
フォトニックバンドギャップ構造は、「ステルス」構造について計算してもよく、次のように、非結晶構造を含むが、非結晶構造に限定されるわけではない。所望の回転対称性及び並進規則を有する点パターンを選択及びプロットした後、次のステップでは、最大の完全バンドギャップを作成することになる、選択した点パターン周囲の誘電体材料の配置を決定する。出願人は、本明細書で、選択した点パターン(結晶、準結晶、又は不規則超均一であっても)を変形して、並進及び回転対称性を有するが最適に近いフォトニックバンドギャップ構造(1%以内又は絶対最適(absolute optimal)未満のバンドギャップを有する)を有しないセルの充填形にするための新規な方法を提供する。該手順は、自由度2に対してのみ変化することを要求するので、プロトコルは、他の方法よりも充分少ない計算資源を使用している。一実施形態において、本発明が提供する方法は、以下で説明するように、図2に示す白丸の不規則超均一点パターンから始まる。
Claims (23)
- 凝縮状態又は固体状態で超均一に配列した複数の材料エレメントを含むヘテロ構造を有する製品。
- 前記へテロ構造は、電子、フォトン、フォノン及びスピン波から成る群から選択される励起子と相互作用する請求項1記載の物品。
- 前記へテロ構造は、完全バンドギャップを有する請求項2記載の物品。
- 前記バンドギャップは、TE最適化及びTM最適化している請求項3記載の物品。
- 前記へテロ構造は、平面内の超均一点パターンで、互いに間隔を空けて配列した複数の点から得られる請求項3記載の物品。
- 前記へテロ構造は、アジマス対称性を有する請求項5記載の物品。
- 前記点パターンは、空間内に配列している請求項5記載の物品。
- 前記へテロ構造は、多面体を有する請求項7記載の物品。
- 前記へテロ構造は、準結晶対称性を示す請求項1記載の物品。
- 前記へテロ構造は、並進等方的である請求項1記載の物品。
- 前記へテロ構造の前記材料エレメントは格子を有し、
前記格子は、複数の交差線によって規定される複数のセルを有し、
前記線は、セルエッジを規定し、
前記交点は頂点を規定し、
各前記セルは、そこで多角形セル空間を規定する請求項1記載の物品。 - 前記格子は、複数の多面体セルを有し、
各前記セルは、多面体セル空間をそこで規定する複数の多角形セル面を有する請求項11記載の物品。 - 前記エッジ、頂点及び面は、そこに配列した第1材料エレメントを有し、
前記セル空間は、第2材料エレメントで満ちている請求項12記載の物品。 - 前記第1材料エレメントは、前記第2材料エレメントよりも大きい誘電率を有する請求項13記載の物品。
- 前記第1材料エレメントはシリコンを含み、前記第2材料エレメントは空気を含む請求項14記載の物品。
- 前記第1材料エレメントは、前記エッジ又は前記面上に有限の厚さで配列し、各前記頂点は、有限の厚さ及び有限の半径を有する円柱の重心と一致する請求項15記載の物品。
- 完全バンドギャップを有する超均一へテロ構造の作成方法であって、
I)前記へテロ構造について構造因子を選択するステップと、
II)大きさLのボックスを構成するステップであって、前記ボックスは点の第1点パターンを有し、前記点は、並進的に不規則に間隔を空けられており、前記間隔を空けられている点は、平均間隔を有し、平均間隔≪Lの関係があるステップと、
I)前記第1点パターンからドロネー三価タイルを構成し、各前記タイルについて重心をプロットして重心点パターンを作成するステップと、
IV)前記重心点パターン内の各重心について、前記タイルの最近接部を特定するステップと、
V)複数の線を構成して、各前記近接部内の前記重心を、
a)前記複数の線は、頂点を有する複数のエッジ又は面を規定し、
b)前記複数のエッジ又は面は、そこにセル空間を有する超セルを規定し、
c)各前記超セルは、前記第1点パターン内の特異点を包囲するように接続するステップと、
VI)前記エッジ又は面及び頂点上に第1材料エレメントを配列することと、前記セル空間を第2材料エレメントで満たすことと、及び複数の前記超セルから前記へテロ構造を組み立てることとにより、ヘテロ構造を構成するステップとを含む方法。 - 前記第1点パターンは、ペンローズタイルの頂点を有する請求項17記載の方法。
- 前記第1点パターンは、ブリルアンゾーン内で構造因子S(k)が正確にゼロへ向かうような波数kの割合を決定するパラメータχを有し、χが増加するに従って、kcはχが臨界値χcに達するまで増加し、χc未満では、前記不規則パターンは長距離並進秩序を達成する請求項17記載の方法。
- 前記第1材料エレメントは、前記第2材料エレメントより大きい誘電率を有する請求項17記載の方法。
- 前記第1材料エレメントはシリコンを含み、前記第2材料エレメントは空気を含む請求項17記載の方法。
- 前記第1材料エレメントは、前記エッジ又は前記面上に有限の厚さで配列し、各前記頂点は、有限の厚さ及び有限の半径を有する円柱の重心と一致する請求項21記載の方法。
- 前記重心点パターンは、半径Rの球形サンプリングウインドゥ内で、分散<NR 2>−<NR>2∝Rpの関係を示し、p<dである請求項22記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26926809P | 2009-06-22 | 2009-06-22 | |
US61/269,268 | 2009-06-22 | ||
PCT/US2010/039516 WO2011005530A2 (en) | 2009-06-22 | 2010-06-22 | Non-crystalline materials having complete photonic, electronic, or phononic band gaps |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015084456A Division JP2015180939A (ja) | 2009-06-22 | 2015-04-16 | 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012530945A true JP2012530945A (ja) | 2012-12-06 |
JP2012530945A5 JP2012530945A5 (ja) | 2013-08-08 |
Family
ID=43429768
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012516382A Pending JP2012530945A (ja) | 2009-06-22 | 2010-06-22 | 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 |
JP2015084456A Pending JP2015180939A (ja) | 2009-06-22 | 2015-04-16 | 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015084456A Pending JP2015180939A (ja) | 2009-06-22 | 2015-04-16 | 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 |
Country Status (4)
Country | Link |
---|---|
US (6) | US9207357B2 (ja) |
EP (1) | EP2445986A4 (ja) |
JP (2) | JP2012530945A (ja) |
WO (1) | WO2011005530A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022553495A (ja) * | 2019-10-18 | 2022-12-23 | カリフォルニア インスティチュート オブ テクノロジー | メタマテリアル色分割を有するcmosカラーイメージセンサ |
JP7503623B2 (ja) | 2019-10-18 | 2024-06-20 | カリフォルニア インスティチュート オブ テクノロジー | 3次元(3d)散乱構造体を構築するための方法 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013055503A1 (en) * | 2011-10-14 | 2013-04-18 | The Trustees Of Princeton University | Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes |
US9207357B2 (en) | 2009-06-22 | 2015-12-08 | The Trustees Of Princeton University | Non-crystalline materials having complete photonic, electronic, or phononic band gaps |
US8923661B2 (en) | 2011-07-27 | 2014-12-30 | Massachusetts Institute Of Technology | 2-pattern compound photonic crystals with a large, complete photonic band gap |
US11852781B2 (en) | 2011-10-14 | 2023-12-26 | The Trustees Of Princeton University | Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes |
CN102650714B (zh) * | 2012-01-13 | 2015-04-08 | 深圳大学 | 光子晶体波导t形偏振分束器 |
US9291297B2 (en) * | 2012-12-19 | 2016-03-22 | Elwha Llc | Multi-layer phononic crystal thermal insulators |
US9519104B1 (en) | 2014-03-07 | 2016-12-13 | Etaphase, Inc. | Hyperuniform disordered material with perforated resonant structure |
US10110306B2 (en) | 2015-12-13 | 2018-10-23 | GenXComm, Inc. | Interference cancellation methods and apparatus |
WO2017131581A1 (en) * | 2016-01-29 | 2017-08-03 | Agency For Science, Technology And Research | Polarization device for polarizing electromagnetic waves, methods of forming and operating the same |
GB201601838D0 (en) * | 2016-02-02 | 2016-03-16 | Univ Surrey | A composition |
DE102016105647B4 (de) | 2016-03-28 | 2021-08-12 | Krohne Messtechnik Gmbh | Führungselement für eine Antenne und Verfahren zur Herstellung eines solchen Führungselementes |
US10257746B2 (en) * | 2016-07-16 | 2019-04-09 | GenXComm, Inc. | Interference cancellation methods and apparatus |
FR3073632B1 (fr) * | 2017-11-16 | 2022-12-16 | Paris Sciences Lettres Quartier Latin | Structure alveolaire a bande interdite photonique |
CA3090087A1 (en) | 2018-02-06 | 2019-08-15 | Exxonmobil Research And Engineering Company | Estimating phase fraction/distribution with dielectric contrast analysis |
US10670860B2 (en) | 2018-04-30 | 2020-06-02 | The Trustees Of Princeton University | Photonic filter bank system and method of use |
DE102018121826A1 (de) * | 2018-09-07 | 2020-03-12 | Airbus Defence and Space GmbH | Vorrichtung zum Filtern von elektromagnetischer Strahlung, Luft- und Raumfahrzeug und Verfahren zum Herstellen der Vorrichtung |
US11150409B2 (en) | 2018-12-27 | 2021-10-19 | GenXComm, Inc. | Saw assisted facet etch dicing |
CN110176280B (zh) * | 2019-05-10 | 2023-06-06 | 北京大学深圳研究生院 | 一种描述材料晶体结构的方法及其应用 |
US11016315B2 (en) | 2019-07-11 | 2021-05-25 | Luminous Computing, Inc. | Photonic bandgap phase modulator, optical filter bank, photonic computing system, and methods of use |
US10727945B1 (en) | 2019-07-15 | 2020-07-28 | GenXComm, Inc. | Efficiently combining multiple taps of an optical filter |
CN110673335B (zh) * | 2019-09-01 | 2021-06-22 | 复旦大学 | 一种光子晶体分光器件及其设计方法 |
US11215755B2 (en) | 2019-09-19 | 2022-01-04 | GenXComm, Inc. | Low loss, polarization-independent, large bandwidth mode converter for edge coupling |
US11539394B2 (en) | 2019-10-29 | 2022-12-27 | GenXComm, Inc. | Self-interference mitigation in in-band full-duplex communication systems |
CN111179894A (zh) * | 2019-12-11 | 2020-05-19 | 南京光声超构材料研究院有限公司 | 一种可用于中高频减振的可调宽带隙拉胀声子晶体 |
US11733079B2 (en) | 2020-05-26 | 2023-08-22 | ExxonMobil Technology and Engineering Company | Measuring the flow rate of fluids with dielectric contrast analysis |
US11796737B2 (en) | 2020-08-10 | 2023-10-24 | GenXComm, Inc. | Co-manufacturing of silicon-on-insulator waveguides and silicon nitride waveguides for hybrid photonic integrated circuits |
US11574619B2 (en) * | 2020-09-29 | 2023-02-07 | Toyota Motor Engineering & Manufacturing North America, Inc. | Acoustic structure for beaming soundwaves |
US12001065B1 (en) | 2020-11-12 | 2024-06-04 | ORCA Computing Limited | Photonics package with tunable liquid crystal lens |
US11838056B2 (en) | 2021-10-25 | 2023-12-05 | GenXComm, Inc. | Hybrid photonic integrated circuits for ultra-low phase noise signal generators |
US20240021187A1 (en) * | 2022-07-13 | 2024-01-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Beaming sound waves using phononic crystals |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003139978A (ja) * | 2001-08-23 | 2003-05-14 | Inst Of Physical & Chemical Res | フォトニック結晶および光導波素子 |
JP2006351909A (ja) * | 2005-06-17 | 2006-12-28 | Institute Of Physical & Chemical Research | フォトニック結晶及びそれを用いた半導体レーザ |
JP2008209706A (ja) * | 2007-02-27 | 2008-09-11 | Japan Aviation Electronics Industry Ltd | フォトニック構造体 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5784400A (en) | 1995-02-28 | 1998-07-21 | Massachusetts Institute Of Technology | Resonant cavities employing two dimensionally periodic dielectric materials |
US5994316A (en) | 1996-02-21 | 1999-11-30 | The Immune Response Corporation | Method of preparing polynucleotide-carrier complexes for delivery to cells |
US6064511A (en) | 1998-03-31 | 2000-05-16 | The Research Foundation Of State University Of New York | Fabrication methods and structured materials for photonic devices |
US6468823B1 (en) | 1999-09-30 | 2002-10-22 | California Institute Of Technology | Fabrication of optical devices based on two dimensional photonic crystal structures and apparatus made thereby |
WO2002044672A2 (en) | 2000-11-28 | 2002-06-06 | Rosemount Inc. | Arrangement for measuring physical parameters with an optical sensor |
US6611085B1 (en) | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
ITTO20030730A1 (it) | 2003-09-23 | 2005-03-24 | Infm Istituto Naz Per La Fisi Ca Della Mater | Procedimento per la fabbricazione di strutture tridimensionali complesse su scala sub-micrometrica mediante litografia combinata di due resist. |
US7173086B2 (en) | 2003-10-31 | 2007-02-06 | Stockhausen, Inc. | Superabsorbent polymer with high permeability |
US6990259B2 (en) | 2004-03-29 | 2006-01-24 | Sru Biosystems, Inc. | Photonic crystal defect cavity biosensor |
US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
JP4290128B2 (ja) | 2005-02-25 | 2009-07-01 | キヤノン株式会社 | センサ |
US7981774B2 (en) | 2005-07-08 | 2011-07-19 | New York University | Assembly of quasicrystalline photonic heterostructures |
US8064127B2 (en) | 2005-07-08 | 2011-11-22 | The Trustees Of Princeton University | Quasicrystalline structures and uses thereof |
WO2008054283A1 (en) | 2006-11-01 | 2008-05-08 | Smoltek Ab | Photonic crystals based on nanostructures |
US8054145B2 (en) | 2008-04-30 | 2011-11-08 | Georgia Tech Research Corporation | Phononic crystal wave structures |
WO2010088585A1 (en) * | 2009-01-30 | 2010-08-05 | Trustees Of Boston University | Chemical/biological sensor employing scattered chromatic components in nano-patterned aperiodic surfaces |
US9207357B2 (en) | 2009-06-22 | 2015-12-08 | The Trustees Of Princeton University | Non-crystalline materials having complete photonic, electronic, or phononic band gaps |
-
2010
- 2010-06-22 US US13/379,740 patent/US9207357B2/en active Active
- 2010-06-22 WO PCT/US2010/039516 patent/WO2011005530A2/en active Application Filing
- 2010-06-22 JP JP2012516382A patent/JP2012530945A/ja active Pending
- 2010-06-22 EP EP10797577.3A patent/EP2445986A4/en active Pending
-
2012
- 2012-09-17 US US14/350,713 patent/US9465141B2/en active Active
-
2015
- 2015-04-16 JP JP2015084456A patent/JP2015180939A/ja active Pending
- 2015-11-30 US US14/953,652 patent/US9461203B2/en active Active
-
2016
- 2016-07-28 US US15/222,332 patent/US9885806B2/en active Active
- 2016-09-29 US US15/280,150 patent/US10175389B2/en active Active
-
2018
- 2018-01-03 US US15/860,920 patent/US11086047B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003139978A (ja) * | 2001-08-23 | 2003-05-14 | Inst Of Physical & Chemical Res | フォトニック結晶および光導波素子 |
JP2006351909A (ja) * | 2005-06-17 | 2006-12-28 | Institute Of Physical & Chemical Research | フォトニック結晶及びそれを用いた半導体レーザ |
JP2008209706A (ja) * | 2007-02-27 | 2008-09-11 | Japan Aviation Electronics Industry Ltd | フォトニック構造体 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022553495A (ja) * | 2019-10-18 | 2022-12-23 | カリフォルニア インスティチュート オブ テクノロジー | メタマテリアル色分割を有するcmosカラーイメージセンサ |
JP7503623B2 (ja) | 2019-10-18 | 2024-06-20 | カリフォルニア インスティチュート オブ テクノロジー | 3次元(3d)散乱構造体を構築するための方法 |
Also Published As
Publication number | Publication date |
---|---|
US20120138864A1 (en) | 2012-06-07 |
WO2011005530A3 (en) | 2011-04-21 |
US9465141B2 (en) | 2016-10-11 |
US11086047B2 (en) | 2021-08-10 |
US20180188418A1 (en) | 2018-07-05 |
US20170082780A1 (en) | 2017-03-23 |
EP2445986A4 (en) | 2017-09-13 |
US10175389B2 (en) | 2019-01-08 |
US9461203B2 (en) | 2016-10-04 |
WO2011005530A2 (en) | 2011-01-13 |
JP2015180939A (ja) | 2015-10-15 |
US9885806B2 (en) | 2018-02-06 |
US20140366647A1 (en) | 2014-12-18 |
US20160377808A1 (en) | 2016-12-29 |
US9207357B2 (en) | 2015-12-08 |
EP2445986A2 (en) | 2012-05-02 |
US20160133786A1 (en) | 2016-05-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10175389B2 (en) | Non-crystalline materials having complete photonic, electronic or phononic band gaps | |
Li et al. | Fragility of photonic band gaps in inverse-opal photonic crystals | |
Colombi et al. | Elastic wave control beyond band-gaps: shaping the flow of waves in plates and half-spaces with subwavelength resonant rods | |
Sainidou et al. | Locally resonant phononic crystals made of hollow spheres or cylinders | |
CN1427960A (zh) | 光器件 | |
Jia et al. | Impact of geometry on the TM photonic band gaps of photonic crystals and quasicrystals | |
Rybin et al. | Resonance effects in photonic crystals and metamaterials:(100th anniversary of the ioffe institute) | |
Zhang et al. | Properties of anisotropic photonic band gaps in three-dimensional plasma photonic crystals containing the uniaxial material with different lattices | |
Matlis et al. | Electromagnetic wave transmittance control using self-organized plasma lattice metamaterial | |
WO2020212925A1 (en) | A method for the design and manufacture of an optical device including an aperiodic matrix of nanostructures for near-field optical modulation and optical devices based on an aperiodic matrix of nanostructures obtainable by means of said method | |
Smith et al. | Left-handed metamaterials | |
Benedetti et al. | Numerical tailoring of linear response from plasmonic nano-resonators grown on a layer of polystyrene spheres | |
CN109416440B (zh) | 包括三维无定形三价网络的组合物 | |
Valagiannopoulos et al. | Limits for scattering resonances in azimuthally inhomogeneous nanotubes | |
Zito et al. | Bandgap properties of low‐index contrast aperiodically ordered photonic quasicrystals | |
CN113412555A (zh) | 三维各向同性超材料、其制造方法、以及具备该超材料的太赫兹区域光学元件 | |
Wang et al. | Rigorous analysis of axisymmetric transformation optics lenses embedded in layered media illuminated by obliquely incident plane waves | |
US11733429B2 (en) | Controlled design of localized states in photonic quasicrystals | |
Liu et al. | Improvement of spectral efficiency based on spectral splitting in photonic quantum-well structures | |
Wei | Strong Coupling Between Photonic Cavities | |
Grzegorczyk et al. | Refraction experiments in waveguide environments | |
Beig et al. | Simulating wave phenomena in large graded-pattern arrays with random perturbation | |
House | Multifocal Metasurface Lens for use in Continuous Wave Doppler Radar | |
Li | Physical Design of Periodic Structures: from Photonic Crystals to Phononic Crystals | |
Yahyaoui et al. | Titre |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130619 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130619 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140225 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140521 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140528 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140624 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140701 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140724 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141216 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150416 |
|
A911 | Transfer of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20150616 |
|
A912 | Removal of reconsideration by examiner before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20150710 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20151020 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20151022 |