SG144148A1 - Stabilized photoresist structure for etching process - Google Patents

Stabilized photoresist structure for etching process

Info

Publication number
SG144148A1
SG144148A1 SG200804363-0A SG2008043630A SG144148A1 SG 144148 A1 SG144148 A1 SG 144148A1 SG 2008043630 A SG2008043630 A SG 2008043630A SG 144148 A1 SG144148 A1 SG 144148A1
Authority
SG
Singapore
Prior art keywords
mask
widths
etched
spaces
etching process
Prior art date
Application number
SG200804363-0A
Other languages
English (en)
Inventor
S M Reza Sadjadi
Eric A Hudson
Peter Cirigliano
Ji Soo Kim
Zhisong Huang
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/076,087 external-priority patent/US7241683B2/en
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG144148A1 publication Critical patent/SG144148A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
SG200804363-0A 2005-03-08 2006-03-02 Stabilized photoresist structure for etching process SG144148A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/076,087 US7241683B2 (en) 2005-03-08 2005-03-08 Stabilized photoresist structure for etching process
US11/223,363 US7491647B2 (en) 2005-03-08 2005-09-09 Etch with striation control

Publications (1)

Publication Number Publication Date
SG144148A1 true SG144148A1 (en) 2008-07-29

Family

ID=36782308

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804363-0A SG144148A1 (en) 2005-03-08 2006-03-02 Stabilized photoresist structure for etching process

Country Status (8)

Country Link
US (2) US7491647B2 (ko)
EP (1) EP1856717A2 (ko)
JP (2) JP5070196B2 (ko)
KR (2) KR101338841B1 (ko)
IL (1) IL185743A (ko)
SG (1) SG144148A1 (ko)
TW (1) TWI396938B (ko)
WO (1) WO2006096528A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7682516B2 (en) 2005-10-05 2010-03-23 Lam Research Corporation Vertical profile fixing

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US7491343B2 (en) 2006-09-14 2009-02-17 Lam Research Corporation Line end shortening reduction during etch
US7309646B1 (en) * 2006-10-10 2007-12-18 Lam Research Corporation De-fluoridation process
US7902073B2 (en) * 2006-12-14 2011-03-08 Lam Research Corporation Glue layer for hydrofluorocarbon etch
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US7981812B2 (en) * 2007-07-08 2011-07-19 Applied Materials, Inc. Methods for forming ultra thin structures on a substrate
US20100330805A1 (en) * 2007-11-02 2010-12-30 Kenny Linh Doan Methods for forming high aspect ratio features on a substrate
US20090191711A1 (en) * 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
KR101025741B1 (ko) * 2008-09-02 2011-04-04 주식회사 하이닉스반도체 수직 채널 트랜지스터의 활성필라 제조방법
JP5260356B2 (ja) 2009-03-05 2013-08-14 東京エレクトロン株式会社 基板処理方法
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JP5662079B2 (ja) * 2010-02-24 2015-01-28 東京エレクトロン株式会社 エッチング処理方法
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WO2013145509A1 (ja) * 2012-03-27 2013-10-03 シャープ株式会社 ウエハ処理方法、ウエハ処理装置および半導体発光素子の製造方法
US9779952B2 (en) 2013-08-27 2017-10-03 Tokyo Electron Limited Method for laterally trimming a hardmask
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US9659771B2 (en) * 2015-06-11 2017-05-23 Applied Materials, Inc. Conformal strippable carbon film for line-edge-roughness reduction for advanced patterning
US9922839B2 (en) * 2015-06-23 2018-03-20 Lam Research Corporation Low roughness EUV lithography
US9852924B1 (en) * 2016-08-24 2017-12-26 Lam Research Corporation Line edge roughness improvement with sidewall sputtering
JP6877290B2 (ja) * 2017-08-03 2021-05-26 東京エレクトロン株式会社 被処理体を処理する方法
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
US10734238B2 (en) * 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
US11114306B2 (en) 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material
JP7323409B2 (ja) * 2019-10-01 2023-08-08 東京エレクトロン株式会社 基板処理方法、及び、プラズマ処理装置
JP7320554B2 (ja) * 2021-04-27 2023-08-03 株式会社アルバック エッチング方法

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US7682516B2 (en) 2005-10-05 2010-03-23 Lam Research Corporation Vertical profile fixing

Also Published As

Publication number Publication date
TWI396938B (zh) 2013-05-21
KR20070116076A (ko) 2007-12-06
EP1856717A2 (en) 2007-11-21
KR101274382B1 (ko) 2013-06-14
TW200702900A (en) 2007-01-16
US20090121324A1 (en) 2009-05-14
US20060194439A1 (en) 2006-08-31
IL185743A0 (en) 2008-01-06
JP2012151510A (ja) 2012-08-09
IL185743A (en) 2010-12-30
JP5070196B2 (ja) 2012-11-07
US7491647B2 (en) 2009-02-17
WO2006096528A2 (en) 2006-09-14
KR20130025942A (ko) 2013-03-12
JP2008538857A (ja) 2008-11-06
WO2006096528A3 (en) 2006-12-07
KR101338841B1 (ko) 2013-12-06

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