SG144129A1 - Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same - Google Patents

Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same

Info

Publication number
SG144129A1
SG144129A1 SG200719150-5A SG2007191505A SG144129A1 SG 144129 A1 SG144129 A1 SG 144129A1 SG 2007191505 A SG2007191505 A SG 2007191505A SG 144129 A1 SG144129 A1 SG 144129A1
Authority
SG
Singapore
Prior art keywords
wafer
annealing
support pin
water
slip dislocation
Prior art date
Application number
SG200719150-5A
Other languages
English (en)
Inventor
Kim Kun
Hong Jin-Kyun
Seo Woo Hyun
Song Kyoung-Hwan
Original Assignee
Siltron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltron Inc filed Critical Siltron Inc
Publication of SG144129A1 publication Critical patent/SG144129A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200719150-5A 2006-12-27 2007-12-27 Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same SG144129A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060134791A KR100818842B1 (ko) 2006-12-27 2006-12-27 웨이퍼의 열처리시 슬립을 방지할 수 있는 웨이퍼 지지 핀및 웨이퍼의 열처리 방법

Publications (1)

Publication Number Publication Date
SG144129A1 true SG144129A1 (en) 2008-07-29

Family

ID=39533579

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200719150-5A SG144129A1 (en) 2006-12-27 2007-12-27 Wafer support pin for preventing slip dislocation during annealing of water and wafer annealing method using the same

Country Status (5)

Country Link
US (1) US7767596B2 (zh)
JP (1) JP5280045B2 (zh)
KR (1) KR100818842B1 (zh)
CN (1) CN101275286A (zh)
SG (1) SG144129A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101109822B1 (ko) * 2010-01-26 2012-02-13 주식회사 엘지실트론 웨이퍼의 열처리시 전위 결함을 저감할 수 있는 웨이퍼 지지 핀 및 그 제조 방법
JP2012151371A (ja) * 2011-01-20 2012-08-09 Nuflare Technology Inc 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP6086056B2 (ja) 2013-11-26 2017-03-01 信越半導体株式会社 熱処理方法
JP6520050B2 (ja) * 2014-10-31 2019-05-29 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびエピタキシャルウェーハの製造方法
JP6369297B2 (ja) * 2014-11-12 2018-08-08 株式会社Sumco 半導体ウェーハの支持方法及びその支持装置
CN108352343B (zh) 2015-12-30 2022-04-08 玛特森技术公司 毫秒退火系统中的衬底支承件
JP6637321B2 (ja) * 2016-02-03 2020-01-29 株式会社Ｓｃｒｅｅｎホールディングス 熱処理用サセプタおよび熱処理装置
CN106340487A (zh) * 2016-10-21 2017-01-18 北京鼎泰芯源科技发展有限公司 用于晶圆退火的载片盘、退火装置及晶圆退火方法
JP7321768B2 (ja) 2018-05-23 2023-08-07 信越化学工業株式会社 化学気相成長装置および被膜形成方法
DE102018218001B4 (de) * 2018-10-22 2021-09-30 Schott Ag Verfahren zur Herstellung eines Anschlussstiftes für Durchführungen, sowie Anschlussstift
CN115418725B (zh) * 2022-07-28 2024-04-26 浙江大学杭州国际科创中心 一种氮化硅薄膜热退火方法和装置
EP4386819A1 (de) * 2022-12-15 2024-06-19 Siltronic AG Verfahren zum testen der widerstandsfähigkeit von halbleiterscheiben aus einkristallinem silizium gegen thermisch induzierte versetzungen

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5788763A (en) 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
JPH08288372A (ja) * 1995-04-11 1996-11-01 Nippon Pillar Packing Co Ltd ウエハ支持プレート
JPH09205130A (ja) * 1996-01-17 1997-08-05 Applied Materials Inc ウェハ支持装置
EP0889510B1 (en) * 1996-06-28 2007-08-15 Sumco Corporation Method and device for heat-treating single-crystal silicon wafer, single-crystal silicon wafer, and process for producing single-crystal silicon wafer
JP2001185607A (ja) * 1999-12-27 2001-07-06 Canon Inc 基板吸着保持装置およびデバイス製造方法
DE10003639C2 (de) * 2000-01-28 2003-06-18 Steag Rtp Systems Gmbh Vorrichtung zum thermischen Behandeln von Substraten
JP4589545B2 (ja) * 2001-02-19 2010-12-01 新日本製鐵株式会社 ウェハ支持部材、ウェハ保持具およびウェハ保持装置
EP1253631B1 (en) * 2000-10-16 2011-02-16 Nippon Steel Corporation Wafer holder, wafer holding device, and heat treating furnace
US6497403B2 (en) * 2000-12-28 2002-12-24 Memc Electronic Materials, Inc. Semiconductor wafer holder
KR20010067805A (ko) * 2001-03-29 2001-07-13 정기로 급속 열처리 장치용 에지링
KR20030033187A (ko) * 2001-10-18 2003-05-01 주식회사 실트론 반도체용 에피택셜 웨이퍼의 제조방법
FR2845202B1 (fr) * 2002-10-01 2004-11-05 Soitec Silicon On Insulator Procede de recuit rapide de tranches de materiau semiconducteur.
JP4363401B2 (ja) * 2003-03-26 2009-11-11 信越半導体株式会社 熱処理用ウェーハ支持具及び熱処理装置
JP2005093608A (ja) * 2003-09-16 2005-04-07 Hitachi Kokusai Electric Inc 基板処理装置
US7329947B2 (en) * 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
JP2006005177A (ja) * 2004-06-17 2006-01-05 Tokyo Electron Ltd 熱処理装置

Also Published As

Publication number Publication date
KR100818842B1 (ko) 2008-04-01
JP2008166763A (ja) 2008-07-17
US20080176415A1 (en) 2008-07-24
CN101275286A (zh) 2008-10-01
JP5280045B2 (ja) 2013-09-04
US7767596B2 (en) 2010-08-03

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