CN106340487A - 用于晶圆退火的载片盘、退火装置及晶圆退火方法 - Google Patents
用于晶圆退火的载片盘、退火装置及晶圆退火方法 Download PDFInfo
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- CN106340487A CN106340487A CN201610921759.2A CN201610921759A CN106340487A CN 106340487 A CN106340487 A CN 106340487A CN 201610921759 A CN201610921759 A CN 201610921759A CN 106340487 A CN106340487 A CN 106340487A
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- wafer
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims description 47
- 239000012774 insulation material Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 230000002269 spontaneous effect Effects 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 238000013021 overheating Methods 0.000 claims description 2
- 238000012216 screening Methods 0.000 claims description 2
- 230000005484 gravity Effects 0.000 abstract description 7
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- 239000004065 semiconductor Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
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- 230000000694 effects Effects 0.000 description 4
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- 208000037656 Respiratory Sounds Diseases 0.000 description 3
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- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052732 germanium Inorganic materials 0.000 description 1
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- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
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- 230000001360 synchronised effect Effects 0.000 description 1
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- 230000008646 thermal stress Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610921759.2A CN106340487A (zh) | 2016-10-21 | 2016-10-21 | 用于晶圆退火的载片盘、退火装置及晶圆退火方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610921759.2A CN106340487A (zh) | 2016-10-21 | 2016-10-21 | 用于晶圆退火的载片盘、退火装置及晶圆退火方法 |
Publications (1)
Publication Number | Publication Date |
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CN106340487A true CN106340487A (zh) | 2017-01-18 |
Family
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Family Applications (1)
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CN201610921759.2A Pending CN106340487A (zh) | 2016-10-21 | 2016-10-21 | 用于晶圆退火的载片盘、退火装置及晶圆退火方法 |
Country Status (1)
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CN (1) | CN106340487A (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11150074A (ja) * | 1997-11-19 | 1999-06-02 | Super Silicon Kenkyusho:Kk | 半導体ウエハ保持装置 |
JP2007287969A (ja) * | 2006-04-18 | 2007-11-01 | Ihi Corp | 基板アニール装置用の基板支持装置 |
CN101275286A (zh) * | 2006-12-27 | 2008-10-01 | 斯尔瑞恩公司 | 用于在晶片退火期间防止滑移位错的晶片支撑销以及使用其的晶片退火方法 |
CN103700621A (zh) * | 2013-12-27 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | 一种高深宽比垂直玻璃通孔的刻蚀方法 |
CN103774237A (zh) * | 2014-02-20 | 2014-05-07 | 北京七星华创电子股份有限公司 | 热处理装置 |
CN104637801A (zh) * | 2015-01-30 | 2015-05-20 | 株洲南车时代电气股份有限公司 | 一种制备SiC MOSFET栅氧化层的方法 |
-
2016
- 2016-10-21 CN CN201610921759.2A patent/CN106340487A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11150074A (ja) * | 1997-11-19 | 1999-06-02 | Super Silicon Kenkyusho:Kk | 半導体ウエハ保持装置 |
JP2007287969A (ja) * | 2006-04-18 | 2007-11-01 | Ihi Corp | 基板アニール装置用の基板支持装置 |
CN101275286A (zh) * | 2006-12-27 | 2008-10-01 | 斯尔瑞恩公司 | 用于在晶片退火期间防止滑移位错的晶片支撑销以及使用其的晶片退火方法 |
CN103700621A (zh) * | 2013-12-27 | 2014-04-02 | 华进半导体封装先导技术研发中心有限公司 | 一种高深宽比垂直玻璃通孔的刻蚀方法 |
CN103774237A (zh) * | 2014-02-20 | 2014-05-07 | 北京七星华创电子股份有限公司 | 热处理装置 |
CN104637801A (zh) * | 2015-01-30 | 2015-05-20 | 株洲南车时代电气股份有限公司 | 一种制备SiC MOSFET栅氧化层的方法 |
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Effective date of registration: 20170410 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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Effective date of registration: 20170817 Address after: 519085 Guangdong province Zhuhai city road two Jinding Industrial Area high-tech zone on the south side of A1 building, Rui Applicant after: Zhuhai Ding Tai Xinyuan crystal Ltd Address before: 100080 Haidian District street, Haidian, building B, block 10, level 340, level 3, Applicant before: Beijing Ding Tai Xinyuan Technology Development Co. Ltd. |
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