SG139627A1 - Semiconductor wafers with highly precise edge profile and method for producing them - Google Patents

Semiconductor wafers with highly precise edge profile and method for producing them

Info

Publication number
SG139627A1
SG139627A1 SG200704143-7A SG2007041437A SG139627A1 SG 139627 A1 SG139627 A1 SG 139627A1 SG 2007041437 A SG2007041437 A SG 2007041437A SG 139627 A1 SG139627 A1 SG 139627A1
Authority
SG
Singapore
Prior art keywords
edge profile
producing
semiconductor wafers
highly precise
semiconductor wafer
Prior art date
Application number
SG200704143-7A
Other languages
English (en)
Inventor
Peter Wagner
Hans-Adolf Gerber
Anton Huber
Joerg Moser
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG139627A1 publication Critical patent/SG139627A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200704143-7A 2006-08-09 2007-06-07 Semiconductor wafers with highly precise edge profile and method for producing them SG139627A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006037267A DE102006037267B4 (de) 2006-08-09 2006-08-09 Verfahren zur Herstellung von Halbleiterscheiben mit hochpräzisem Kantenprofil

Publications (1)

Publication Number Publication Date
SG139627A1 true SG139627A1 (en) 2008-02-29

Family

ID=38954686

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200704143-7A SG139627A1 (en) 2006-08-09 2007-06-07 Semiconductor wafers with highly precise edge profile and method for producing them

Country Status (7)

Country Link
US (1) US7767470B2 (ja)
JP (1) JP2008042213A (ja)
KR (1) KR100887269B1 (ja)
CN (1) CN100555576C (ja)
DE (1) DE102006037267B4 (ja)
SG (1) SG139627A1 (ja)
TW (1) TW200809018A (ja)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5293074B2 (ja) * 2008-10-20 2013-09-18 日立電線株式会社 窒化物半導体基板及び窒化物半導体基板の製造方法
US7977123B2 (en) * 2009-05-22 2011-07-12 Lam Research Corporation Arrangements and methods for improving bevel etch repeatability among substrates
KR101425721B1 (ko) * 2012-10-18 2014-08-01 풍원정밀(주) 박판금속가공품의 제조방법, 이에 따라 제조되는 박판금속가공품
DE102013210057A1 (de) * 2013-05-29 2014-12-04 Siltronic Ag Verfahren zur Politur der Kante einer Halbleiterscheibe
JP6614978B2 (ja) * 2016-01-14 2019-12-04 株式会社荏原製作所 研磨装置及び研磨方法
JP6610587B2 (ja) * 2017-03-13 2019-11-27 信越半導体株式会社 ウェーハの製造方法
DE102017210423A1 (de) * 2017-06-21 2018-12-27 Siltronic Ag Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe
CN110993537A (zh) * 2019-12-20 2020-04-10 徐州鑫晶半导体科技有限公司 确定半导体晶圆边缘抛光形状的方法
JP7549322B2 (ja) 2020-04-01 2024-09-11 株式会社ノベルクリスタルテクノロジー 半導体基板及びその製造方法
KR102413432B1 (ko) * 2020-08-28 2022-06-27 에스케이실트론 주식회사 웨이퍼 및 그 형상 분석 방법
WO2022225545A1 (en) * 2021-04-19 2022-10-27 Kla Corporation Edge profile inspection for delamination defects

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0624179B2 (ja) * 1989-04-17 1994-03-30 信越半導体株式会社 半導体シリコンウェーハおよびその製造方法
JP3035690B2 (ja) * 1994-01-27 2000-04-24 株式会社東京精密 ウェーハ直径・断面形状測定装置及びそれを組み込んだウェーハ面取り機
JPH08243891A (ja) * 1995-03-07 1996-09-24 Kao Corp 基板のチャンファ加工装置
DE69709924D1 (de) * 1996-06-15 2002-02-28 Unova Uk Ltd Flexible verbindung einer schleifmaschinenspindel zu einer plattform
KR20000048897A (ko) * 1996-10-04 2000-07-25 오브시디안 인코포레이티드 화학 기계적 연마 두께 제거를 제어하는 방법 및 시스템
JP3328193B2 (ja) 1998-07-08 2002-09-24 信越半導体株式会社 半導体ウエーハの製造方法
JP2000084811A (ja) * 1998-09-16 2000-03-28 Tokyo Seimitsu Co Ltd ウェーハ面取り装置
JP2000114216A (ja) * 1998-10-01 2000-04-21 Sumitomo Metal Ind Ltd 半導体ウェーハの製造方法
JP3968695B2 (ja) 1999-12-27 2007-08-29 信越半導体株式会社 ウェーハ外周部の加工能力評価方法
EP1335420B1 (en) * 2000-11-16 2015-01-07 Shin-Etsu Handotai Co., Ltd. Wafer shape evaluating method and device and device producing method, wafer and wafer selecting method
US6650422B2 (en) * 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
DE10131246C2 (de) * 2001-06-28 2002-12-19 Wacker Siltronic Halbleitermat Verfahren zur materialabtragenden Bearbeitung der Kanten von Halbleiterscheiben
JP2003017444A (ja) * 2001-06-29 2003-01-17 Sumitomo Mitsubishi Silicon Corp 半導体ウェーハの加工取り代の測定方法およびその装置
KR100518582B1 (ko) 2002-08-29 2005-10-04 삼성전자주식회사 비대칭적 에지 프로파일을 가진 반도체 웨이퍼 및 그제조방법
US7258931B2 (en) 2002-08-29 2007-08-21 Samsung Electronics Co., Ltd. Semiconductor wafers having asymmetric edge profiles that facilitate high yield processing by inhibiting particulate contamination
JP4916890B2 (ja) * 2005-04-19 2012-04-18 株式会社荏原製作所 基板処理装置及び基板処理方法
DE102005034120B4 (de) * 2005-07-21 2013-02-07 Siltronic Ag Verfahren zur Herstellung einer Halbleiterscheibe
KR200419871Y1 (ko) 2006-03-27 2006-06-26 유인섭 금속인서트 내장 스페이서
JP4915146B2 (ja) * 2006-06-08 2012-04-11 信越半導体株式会社 ウェーハの製造方法

Also Published As

Publication number Publication date
US7767470B2 (en) 2010-08-03
CN101123188A (zh) 2008-02-13
DE102006037267B4 (de) 2010-12-09
TW200809018A (en) 2008-02-16
JP2008042213A (ja) 2008-02-21
US20080036040A1 (en) 2008-02-14
KR100887269B1 (ko) 2009-03-06
KR20080013748A (ko) 2008-02-13
CN100555576C (zh) 2009-10-28
DE102006037267A1 (de) 2008-02-21

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