SG137674A1 - Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device - Google Patents

Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

Info

Publication number
SG137674A1
SG137674A1 SG200402047-5A SG2004020475A SG137674A1 SG 137674 A1 SG137674 A1 SG 137674A1 SG 2004020475 A SG2004020475 A SG 2004020475A SG 137674 A1 SG137674 A1 SG 137674A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
laser irradiation
irradiation apparatus
manufacturing semiconductor
beam homogenizer
Prior art date
Application number
SG200402047-5A
Other languages
English (en)
Inventor
Koichiro Tanaka
Tomoaki Moriwaka
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG137674A1 publication Critical patent/SG137674A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/0994—Fibers, light pipes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
SG200402047-5A 2003-04-24 2004-04-13 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device SG137674A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003120782 2003-04-24
JP2003342803 2003-10-01

Publications (1)

Publication Number Publication Date
SG137674A1 true SG137674A1 (en) 2007-12-28

Family

ID=33302260

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200402047-5A SG137674A1 (en) 2003-04-24 2004-04-13 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

Country Status (5)

Country Link
US (3) US7418172B2 (ko)
KR (1) KR101037119B1 (ko)
CN (1) CN1540390A (ko)
SG (1) SG137674A1 (ko)
TW (1) TWI356206B (ko)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1400832B1 (en) * 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7327916B2 (en) * 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7245802B2 (en) * 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
JP4579575B2 (ja) 2004-05-14 2010-11-10 株式会社半導体エネルギー研究所 レーザ照射方法及びレーザ照射装置
US7387954B2 (en) 2004-10-04 2008-06-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
WO2006046495A1 (en) * 2004-10-27 2006-05-04 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, and laser irradiation method, laser irradiation apparatus, and laser annealing method of non-single crystalline semiconductor film using the same
US20070153392A1 (en) * 2005-01-21 2007-07-05 Meritt Reynolds Apparatus and method for illumination of light valves
US7279721B2 (en) * 2005-04-13 2007-10-09 Applied Materials, Inc. Dual wavelength thermal flux laser anneal
WO2007049525A1 (en) * 2005-10-26 2007-05-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and manufacturing method of semiconductor device
US7411735B2 (en) * 2005-12-06 2008-08-12 3M Innovative Property Company Illumination system incorporating collimated light source
US7563661B2 (en) 2006-02-02 2009-07-21 Semiconductor Energy Laboratory Co., Ltd. Crystallization method for semiconductor film, manufacturing method for semiconductor device, and laser irradiation apparatus
US8126302B2 (en) * 2006-03-31 2012-02-28 Novartis Ag Method and system for correcting an optical beam
US8237085B2 (en) * 2006-11-17 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and laser irradiation method
NL1035986A1 (nl) * 2007-09-28 2009-03-31 Asml Holding Nv Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for an optical apparatus.
US8669461B2 (en) * 2008-10-17 2014-03-11 Massachusetts Institute Of Technology Ultra-high efficiency multi-junction solar cells using polychromatic diffractive concentrators
DE102010045620B4 (de) * 2010-09-17 2016-09-01 Limo Patentverwaltung Gmbh & Co. Kg Vorrichtung zur Erzeugung einer linienförmigen Intensitätsverteilung in einer Arbeitsebene
US9429742B1 (en) 2011-01-04 2016-08-30 Nlight, Inc. High power laser imaging systems
US8835804B2 (en) * 2011-01-04 2014-09-16 Nlight Photonics Corporation Beam homogenizer
US10095016B2 (en) 2011-01-04 2018-10-09 Nlight, Inc. High power laser system
US9409255B1 (en) 2011-01-04 2016-08-09 Nlight, Inc. High power laser imaging systems
CN102081236A (zh) * 2011-01-27 2011-06-01 清华大学 激光退火设备中的光学处理装置
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) * 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
US8569187B2 (en) * 2011-06-24 2013-10-29 Applied Materials, Inc. Thermal processing apparatus
US9720244B1 (en) 2011-09-30 2017-08-01 Nlight, Inc. Intensity distribution management system and method in pixel imaging
US8688401B2 (en) 2011-12-22 2014-04-01 Alcon Research, Ltd. Providing consistent output from an endoilluminator system
US9541679B1 (en) * 2013-03-12 2017-01-10 Nlight, Inc. Integrating volume for laser light homogenization
US9310248B2 (en) 2013-03-14 2016-04-12 Nlight, Inc. Active monitoring of multi-laser systems
DE102013011637A1 (de) * 2013-07-12 2015-01-15 Manz Ag Vorrichtung und Verfahren zum thermischen Behandeln eines Substrats
TWI529020B (zh) 2013-12-02 2016-04-11 財團法人工業技術研究院 光束擴散模組以及光束產生系統
US9709810B2 (en) 2014-02-05 2017-07-18 Nlight, Inc. Single-emitter line beam system
CN104110614A (zh) * 2014-07-08 2014-10-22 北京京东方视讯科技有限公司 一种白光led光源、背光模组及显示装置
CN107078454A (zh) * 2014-12-15 2017-08-18 极光先进雷射株式会社 激光照射装置
EP3076160A1 (en) * 2015-03-31 2016-10-05 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Spatially resolved aerosol detection
US9570291B2 (en) * 2015-07-14 2017-02-14 GlobalFoundries, Inc. Semiconductor substrates and methods for processing semiconductor substrates
US10481404B1 (en) 2018-05-14 2019-11-19 Palo Alto Research Center Incorporated Rectangular cavity optical beam shaper and method of manufacturing the same
RU2750692C1 (ru) * 2020-10-15 2021-07-01 Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" (Госкорпорация "Росатом") Устройство для формирования однородного распределения лазерного излучения на мишени
CN114236859B (zh) * 2021-12-17 2023-09-29 哈尔滨工业大学 一种基于全反射积分腔的片光能量均匀化光学整形系统
US20240201510A1 (en) * 2022-12-15 2024-06-20 Lumileds Llc Optics for slim style head lighting

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0747772A1 (de) * 1995-06-06 1996-12-11 Carl Zeiss Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
EP0805368A1 (fr) * 1996-04-30 1997-11-05 Thomson-Csf Dispositif de mise en forme d'un faisceau plat
EP1122020A2 (en) * 2000-02-02 2001-08-08 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US20020196419A1 (en) * 2001-05-22 2002-12-26 Satoru Mizouchi Illumination apparatus, exposure apparatus, and device fabricating method using the same
US20030024905A1 (en) * 2001-08-03 2003-02-06 Semiconductor Energy Laboratory Co., Ltd. Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044948B (en) 1979-02-27 1983-10-05 Boc Ltd Power density of a laser beam heater
US4733944A (en) 1986-01-24 1988-03-29 Xmr, Inc. Optical beam integration system
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
US4793694A (en) * 1986-04-23 1988-12-27 Quantronix Corporation Method and apparatus for laser beam homogenization
JPS63137120A (ja) * 1986-11-28 1988-06-09 Mitsubishi Heavy Ind Ltd レ−ザ表面熱処理装置
US4830447A (en) 1987-02-13 1989-05-16 Fuji Photo Film Co., Ltd. Optical wavelength conversion device
JPH02175090A (ja) 1988-12-27 1990-07-06 Isamu Miyamoto レーザビーム成形装置
US5303084A (en) * 1991-08-27 1994-04-12 Kaman Aerospace Corporation Laser light beam homogenizer and imaging lidar system incorporating same
US5224200A (en) 1991-11-27 1993-06-29 The United States Of America As Represented By The Department Of Energy Coherence delay augmented laser beam homogenizer
JPH05329675A (ja) * 1992-05-27 1993-12-14 Hoya Corp レーザ装置
US5285509A (en) 1992-12-18 1994-02-08 Hughes Aircraft Company Coupler for waveguides of differing cross section
JPH0727993A (ja) * 1993-07-07 1995-01-31 Matsushita Electric Ind Co Ltd 光ビーム均一化光学系
GB9324589D0 (en) 1993-11-30 1994-01-19 Univ Southampton Beam shaping device
US6285443B1 (en) 1993-12-13 2001-09-04 Carl-Zeiss-Stiftung Illuminating arrangement for a projection microlithographic apparatus
DE4429913C1 (de) * 1994-08-23 1996-03-21 Fraunhofer Ges Forschung Vorrichtung und Verfahren zum Plattieren
DE19520187C1 (de) 1995-06-01 1996-09-12 Microlas Lasersystem Gmbh Optik zum Herstellen einer scharfen Beleuchtungslinie aus einem Laserstrahl
JPH08338962A (ja) 1995-06-13 1996-12-24 Toshiba Corp ビームホモジナイザ及びレーザ加工装置
US6078652A (en) 1995-07-21 2000-06-20 Call Manage, Ltd. Least cost routing system
JP3917231B2 (ja) 1996-02-06 2007-05-23 株式会社半導体エネルギー研究所 レーザー照射装置およびレーザー照射方法
JPH09234579A (ja) 1996-02-28 1997-09-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH10253916A (ja) 1997-03-10 1998-09-25 Semiconductor Energy Lab Co Ltd レーザー光学装置
JP4059952B2 (ja) 1997-03-27 2008-03-12 株式会社半導体エネルギー研究所 レーザー光照射方法
JP4086932B2 (ja) 1997-04-17 2008-05-14 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー処理方法
JP3770999B2 (ja) 1997-04-21 2006-04-26 株式会社半導体エネルギー研究所 レーザー照射装置及びレーザー照射方法
JP3462053B2 (ja) 1997-09-30 2003-11-05 株式会社半導体エネルギー研究所 ビームホモジェナイザーおよびレーザー照射装置およびレーザー照射方法および半導体デバイス
JPH11186189A (ja) 1997-12-17 1999-07-09 Semiconductor Energy Lab Co Ltd レーザー照射装置
JPH11212021A (ja) 1998-01-27 1999-08-06 Toshiba Corp レーザ光照射装置
JPH11271619A (ja) 1998-03-19 1999-10-08 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
US6393042B1 (en) 1999-03-08 2002-05-21 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus
JP3562389B2 (ja) 1999-06-25 2004-09-08 三菱電機株式会社 レーザ熱処理装置
EP1076359B1 (en) 1999-08-13 2011-02-23 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation device
JP4514861B2 (ja) 1999-11-29 2010-07-28 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法および半導体装置の作製方法
US6573162B2 (en) 1999-12-24 2003-06-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and method of fabricating a semiconductor device
JP4637376B2 (ja) 2000-02-02 2011-02-23 株式会社半導体エネルギー研究所 レーザ照射装置及び半導体装置の作製方法
JP2002141302A (ja) * 2000-11-02 2002-05-17 Mitsubishi Electric Corp レーザアニーリング用レーザ光学系とこれを用いたレーザアニーリング装置
JP4059623B2 (ja) 2000-12-15 2008-03-12 株式会社リコー 照明装置、及び均一照明装置
US6856727B2 (en) 2001-03-02 2005-02-15 Wavien, Inc. Coupling of light from a non-circular light source
US6738396B2 (en) 2001-07-24 2004-05-18 Gsi Lumonics Ltd. Laser based material processing methods and scalable architecture for material processing
US6785304B2 (en) 2001-07-24 2004-08-31 Gsi Lumonics, Inc. Waveguide device with mode control and pump light confinement and method of using same
TW589667B (en) * 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
JP3903761B2 (ja) 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
TWI292245B (en) 2002-03-28 2008-01-01 Mitsubishi Electric Corp An optical system for uniformly irradiating a laser bear
JP3563065B2 (ja) * 2002-03-28 2004-09-08 三菱電機株式会社 レーザビーム均一照射光学系
EP1400832B1 (en) 2002-09-19 2014-10-22 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer and laser irradiation apparatus and method of manufacturing semiconductor device
US7327916B2 (en) 2003-03-11 2008-02-05 Semiconductor Energy Laboratory Co., Ltd. Beam Homogenizer, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7245802B2 (en) 2003-08-04 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus and method for manufacturing semiconductor device
US7169630B2 (en) 2003-09-30 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0747772A1 (de) * 1995-06-06 1996-12-11 Carl Zeiss Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
EP0805368A1 (fr) * 1996-04-30 1997-11-05 Thomson-Csf Dispositif de mise en forme d'un faisceau plat
EP1122020A2 (en) * 2000-02-02 2001-08-08 Semiconductor Energy Laboratory Co., Ltd. Beam homogenizer, laser irradiation apparatus, semiconductor device, and method of fabricating the semiconductor device
US20020196419A1 (en) * 2001-05-22 2002-12-26 Satoru Mizouchi Illumination apparatus, exposure apparatus, and device fabricating method using the same
US20030024905A1 (en) * 2001-08-03 2003-02-06 Semiconductor Energy Laboratory Co., Ltd. Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device

Also Published As

Publication number Publication date
CN1540390A (zh) 2004-10-27
US7953310B2 (en) 2011-05-31
US20080230723A1 (en) 2008-09-25
KR20040092463A (ko) 2004-11-03
TWI356206B (en) 2012-01-11
US20040213514A1 (en) 2004-10-28
TW200500666A (en) 2005-01-01
US8457463B2 (en) 2013-06-04
US20110230037A1 (en) 2011-09-22
KR101037119B1 (ko) 2011-05-26
US7418172B2 (en) 2008-08-26

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