SG134290A1 - Semiconductor layer structure and method for fabricating a semiconductor layer structure - Google Patents

Semiconductor layer structure and method for fabricating a semiconductor layer structure

Info

Publication number
SG134290A1
SG134290A1 SG200700642-2A SG2007006422A SG134290A1 SG 134290 A1 SG134290 A1 SG 134290A1 SG 2007006422 A SG2007006422 A SG 2007006422A SG 134290 A1 SG134290 A1 SG 134290A1
Authority
SG
Singapore
Prior art keywords
layer
layer structure
semiconductor layer
semiconductor
substrate
Prior art date
Application number
SG200700642-2A
Other languages
English (en)
Inventor
Brian Murphy
Maik Haeberlen
Joerg Lindner
Bernd Stritzker
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG134290A1 publication Critical patent/SG134290A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02447—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
SG200700642-2A 2006-02-02 2007-01-26 Semiconductor layer structure and method for fabricating a semiconductor layer structure SG134290A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102006004870A DE102006004870A1 (de) 2006-02-02 2006-02-02 Halbleiterschichtstruktur und Verfahren zur Herstellung einer Halbleiterschichtstruktur

Publications (1)

Publication Number Publication Date
SG134290A1 true SG134290A1 (en) 2007-08-29

Family

ID=38109663

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200700642-2A SG134290A1 (en) 2006-02-02 2007-01-26 Semiconductor layer structure and method for fabricating a semiconductor layer structure

Country Status (8)

Country Link
US (2) US8829532B2 (fr)
EP (1) EP1816672B1 (fr)
JP (1) JP4979399B2 (fr)
KR (1) KR100897321B1 (fr)
CN (1) CN100578735C (fr)
DE (2) DE102006004870A1 (fr)
SG (1) SG134290A1 (fr)
TW (1) TWI415169B (fr)

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SG161151A1 (en) * 2008-10-22 2010-05-27 Semiconductor Energy Lab Soi substrate and method for manufacturing the same
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CN102122619A (zh) * 2010-12-14 2011-07-13 成都方舟微电子有限公司 赝超晶格功率半导体器件结构及其实现方法
JP5672021B2 (ja) * 2011-01-21 2015-02-18 株式会社Sumco 半導体基板の製造方法
US8901579B2 (en) * 2011-08-03 2014-12-02 Ignis Innovation Inc. Organic light emitting diode and method of manufacturing
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DE102013112785B3 (de) 2013-11-19 2015-02-26 Aixatech Gmbh Verfahren zur Herstellung eines Verbundkörpers mit zumindest einer funktionellen Schicht oder zur weiteren Herstellung elektronischer oder opto-elektronischer Bauelemente
CN105895672A (zh) * 2015-01-26 2016-08-24 东莞市中镓半导体科技有限公司 一种降低氮化镓基电子器件外延应力的离子注入改善型衬底
KR102638056B1 (ko) 2016-06-15 2024-02-20 에스케이하이닉스 주식회사 스위치 및 그 제조 방법과, 이를 포함하는 저항성 메모리 셀 및 전자 장치
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
DE102016117921A1 (de) * 2016-09-22 2018-03-22 Infineon Technologies Ag Verfahren zum Spalten von Halbleiterbauelementen und Halbleiterbauelement
TWI751352B (zh) * 2018-07-05 2022-01-01 法商索泰克公司 集成射頻元件用底材及其製作方法
US11164867B2 (en) * 2019-08-07 2021-11-02 Globalfoundries U.S. Inc. Fin-type field-effect transistors over one or more buried polycrystalline layers
TWI755746B (zh) * 2020-06-02 2022-02-21 合晶科技股份有限公司 半導體基板及其形成方法
CN113024277B (zh) * 2021-03-03 2022-01-28 西南科技大学 高密度层错的碳化硅材料及其制备方法
CN114525489B (zh) * 2022-01-25 2023-04-25 中国科学院上海微系统与信息技术研究所 一种硅基碳化硅薄膜材料制备方法
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Also Published As

Publication number Publication date
JP4979399B2 (ja) 2012-07-18
US8829532B2 (en) 2014-09-09
EP1816672A1 (fr) 2007-08-08
KR100897321B1 (ko) 2009-05-14
TW200733195A (en) 2007-09-01
KR20070079563A (ko) 2007-08-07
JP2007208268A (ja) 2007-08-16
US8383495B2 (en) 2013-02-26
US20070176210A1 (en) 2007-08-02
CN101013667A (zh) 2007-08-08
EP1816672B1 (fr) 2009-11-11
DE502007001932D1 (de) 2009-12-24
CN100578735C (zh) 2010-01-06
US20110151650A1 (en) 2011-06-23
TWI415169B (zh) 2013-11-11
DE102006004870A1 (de) 2007-08-16

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