SG130935A1 - Method of cleaving gan/sapphire for forming laser mirror facets - Google Patents

Method of cleaving gan/sapphire for forming laser mirror facets

Info

Publication number
SG130935A1
SG130935A1 SG200203864-4A SG2002038644A SG130935A1 SG 130935 A1 SG130935 A1 SG 130935A1 SG 2002038644 A SG2002038644 A SG 2002038644A SG 130935 A1 SG130935 A1 SG 130935A1
Authority
SG
Singapore
Prior art keywords
cleaving
gan
sapphire
laser mirror
mirror facets
Prior art date
Application number
SG200203864-4A
Other languages
English (en)
Inventor
Akkipeddi Ramam
Li Zhongli
Sudhiranjan Tripathy
Chua Soo Jin
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Priority to SG200203864-4A priority Critical patent/SG130935A1/en
Priority to US10/602,714 priority patent/US7208096B2/en
Priority to JP2003182974A priority patent/JP2004165616A/ja
Publication of SG130935A1 publication Critical patent/SG130935A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
SG200203864-4A 2002-06-26 2002-06-26 Method of cleaving gan/sapphire for forming laser mirror facets SG130935A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG200203864-4A SG130935A1 (en) 2002-06-26 2002-06-26 Method of cleaving gan/sapphire for forming laser mirror facets
US10/602,714 US7208096B2 (en) 2002-06-26 2003-06-25 Method of cleaving GaN/sapphire for forming laser mirror facets
JP2003182974A JP2004165616A (ja) 2002-06-26 2003-06-26 レーザーデバイスの劈開面を加工する方法及びレーザーデバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200203864-4A SG130935A1 (en) 2002-06-26 2002-06-26 Method of cleaving gan/sapphire for forming laser mirror facets

Publications (1)

Publication Number Publication Date
SG130935A1 true SG130935A1 (en) 2007-04-26

Family

ID=32823045

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200203864-4A SG130935A1 (en) 2002-06-26 2002-06-26 Method of cleaving gan/sapphire for forming laser mirror facets

Country Status (3)

Country Link
US (1) US7208096B2 (ja)
JP (1) JP2004165616A (ja)
SG (1) SG130935A1 (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8809867B2 (en) * 2002-04-15 2014-08-19 The Regents Of The University Of California Dislocation reduction in non-polar III-nitride thin films
KR101363377B1 (ko) * 2002-04-15 2014-02-14 더 리전츠 오브 더 유니버시티 오브 캘리포니아 무극성 질화 갈륨 박막의 전위 감소
AU2003293497A1 (en) 2003-04-15 2005-07-21 Japan Science And Technology Agency Non-polar (a1,b,in,ga)n quantum wells
CN100454494C (zh) * 2003-12-05 2009-01-21 昭和电工株式会社 半导体芯片的制造方法以及半导体芯片
US7956360B2 (en) * 2004-06-03 2011-06-07 The Regents Of The University Of California Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy
JP4985374B2 (ja) * 2006-12-28 2012-07-25 日亜化学工業株式会社 窒化物半導体レーザ素子
WO2008152945A1 (ja) * 2007-06-15 2008-12-18 Rohm Co., Ltd. 半導体発光装置及びその製造方法
KR100998008B1 (ko) * 2007-12-17 2010-12-03 삼성엘이디 주식회사 소자 형성용 기판의 제조방법 및 질화물계 반도체 레이저다이오드의 제조방법
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8597967B1 (en) * 2010-11-17 2013-12-03 Soraa, Inc. Method and system for dicing substrates containing gallium and nitrogen material
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US10052848B2 (en) 2012-03-06 2018-08-21 Apple Inc. Sapphire laminates
US9221289B2 (en) 2012-07-27 2015-12-29 Apple Inc. Sapphire window
US9232672B2 (en) 2013-01-10 2016-01-05 Apple Inc. Ceramic insert control mechanism
US9678540B2 (en) 2013-09-23 2017-06-13 Apple Inc. Electronic component embedded in ceramic material
US9632537B2 (en) 2013-09-23 2017-04-25 Apple Inc. Electronic component embedded in ceramic material
US9154678B2 (en) 2013-12-11 2015-10-06 Apple Inc. Cover glass arrangement for an electronic device
US9225056B2 (en) 2014-02-12 2015-12-29 Apple Inc. Antenna on sapphire structure
US10406634B2 (en) 2015-07-01 2019-09-10 Apple Inc. Enhancing strength in laser cutting of ceramic components

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242570A (ja) * 1997-02-21 1998-09-11 Toshiba Corp 化合物半導体発光素子及びその製造方法
EP1014520A1 (en) * 1998-12-22 2000-06-28 Pioneer Corporation Nitride semiconductor laser and method of fabricating the same
US6379985B1 (en) * 2001-08-01 2002-04-30 Xerox Corporation Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3380346B2 (ja) 1994-12-22 2003-02-24 パイオニア株式会社 半導体レーザ装置の共振器形成方法
JPH09172223A (ja) 1995-12-19 1997-06-30 Sony Corp 半導体装置と半導体装置の製造方法
US5985687A (en) 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
JPH09298339A (ja) 1996-04-30 1997-11-18 Rohm Co Ltd 半導体レーザの製法
JP3537977B2 (ja) 1996-12-27 2004-06-14 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
JPH11195627A (ja) 1997-12-27 1999-07-21 Hewlett Packard Co <Hp> 光学素子の製造方法
JP3822976B2 (ja) * 1998-03-06 2006-09-20 ソニー株式会社 半導体装置およびその製造方法
JP2000049114A (ja) * 1998-07-30 2000-02-18 Sony Corp 電極およびその形成方法ならびに半導体装置およびその製造方法
JP2003046177A (ja) 2001-07-31 2003-02-14 Matsushita Electric Ind Co Ltd 半導体レーザの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10242570A (ja) * 1997-02-21 1998-09-11 Toshiba Corp 化合物半導体発光素子及びその製造方法
EP1014520A1 (en) * 1998-12-22 2000-06-28 Pioneer Corporation Nitride semiconductor laser and method of fabricating the same
US6379985B1 (en) * 2001-08-01 2002-04-30 Xerox Corporation Methods for cleaving facets in III-V nitrides grown on c-face sapphire substrates

Also Published As

Publication number Publication date
US7208096B2 (en) 2007-04-24
US20040202217A1 (en) 2004-10-14
JP2004165616A (ja) 2004-06-10

Similar Documents

Publication Publication Date Title
SG130935A1 (en) Method of cleaving gan/sapphire for forming laser mirror facets
TWI370482B (en) Laser lift-off of sapphire from a nitride flip-chip
GB0604738D0 (en) Methods of link processing using lasers
TWI297628B (en) Laser machining method
AU2001250839A1 (en) Passivation of semiconductor laser facets
PL374180A1 (en) Nitride semiconductor laser element, and production method therefor
AU2003248563A1 (en) Method of forming nanocrystals
AU2003253626A8 (en) Methods and systems for laser based real-time structured light depth extraction
AU2003220847A1 (en) Laser beam machining method
AU2003262079A1 (en) Laser beam machining method
AU2002329169A1 (en) Apparatus and method for delivery of laser light
AU2002241860A1 (en) Method for manufacturing an optical head
DE60314758D1 (de) Laserschweissverfahren zur plasmaverhinderung
SG111233A1 (en) Processing method using laser beam
AU2003278847A1 (en) Reduced splattering of unpassivated laser fuses
EP1448336A4 (en) METHOD FOR LASER MILLING USING A CONSTANT TOOL GAUGHTER ALGORITHM
AU2002250402A1 (en) Method for generating cloned animals using chromosome shuffling
AU2003230246A1 (en) Laser processing method using ultra-short pulse laser beam
AU2002356608A8 (en) Method for the production of iii-v laser components
AU2003209212A8 (en) Rf communications method and system for laser ultrasonic testing
AU2003220842A1 (en) Laser beam machining method
EP1653278A4 (en) BLAULAR BEAM OSCILLATION PROCESS AND EQUIPMENT
EP1536226A4 (en) METHOD OF ANALYZING A PROTEIN USING LASER ABLATION
AU2003293919A1 (en) Arrangement and method for generating ultrashort laser pulses
AU2003243548A1 (en) Method and apparatus for stabilization of facet joint