SG118324A1 - Enhanced sputter target alloy compositions - Google Patents

Enhanced sputter target alloy compositions

Info

Publication number
SG118324A1
SG118324A1 SG200502942A SG200502942A SG118324A1 SG 118324 A1 SG118324 A1 SG 118324A1 SG 200502942 A SG200502942 A SG 200502942A SG 200502942 A SG200502942 A SG 200502942A SG 118324 A1 SG118324 A1 SG 118324A1
Authority
SG
Singapore
Prior art keywords
sputter target
alloy compositions
target alloy
enhanced sputter
enhanced
Prior art date
Application number
SG200502942A
Other languages
English (en)
Inventor
Ziani Abdelouahab
Yuanda R Cheng
Kunkel Bernd
Bartholomeusz Michael
Original Assignee
Heraeus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Inc filed Critical Heraeus Inc
Publication of SG118324A1 publication Critical patent/SG118324A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/657—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing inorganic, non-oxide compound of Si, N, P, B, H or C, e.g. in metal alloy or compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
SG200502942A 2004-06-15 2005-05-10 Enhanced sputter target alloy compositions SG118324A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/866,795 US20050277002A1 (en) 2004-06-15 2004-06-15 Enhanced sputter target alloy compositions

Publications (1)

Publication Number Publication Date
SG118324A1 true SG118324A1 (en) 2006-01-27

Family

ID=34977102

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200502942A SG118324A1 (en) 2004-06-15 2005-05-10 Enhanced sputter target alloy compositions

Country Status (8)

Country Link
US (1) US20050277002A1 (de)
EP (1) EP1607940A3 (de)
JP (1) JP2006004611A (de)
KR (1) KR100776383B1 (de)
CN (1) CN1712551A (de)
CZ (1) CZ2005343A3 (de)
SG (1) SG118324A1 (de)
TW (1) TW200604363A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
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US20060042938A1 (en) * 2004-09-01 2006-03-02 Heraeus, Inc. Sputter target material for improved magnetic layer
US7494617B2 (en) 2005-04-18 2009-02-24 Heraeus Inc. Enhanced formulation of cobalt alloy matrix compositions
US20080057350A1 (en) * 2006-09-01 2008-03-06 Heraeus, Inc. Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds
JP2008101246A (ja) 2006-10-19 2008-05-01 Asahi Glass Co Ltd Ｅｕｖリソグラフィ用反射型マスクブランクを製造する際に使用されるスパッタリングターゲット
JP4377906B2 (ja) 2006-11-20 2009-12-02 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ系Ａｌ基合金スパッタリングターゲット、およびその製造方法
JP5139134B2 (ja) * 2008-03-31 2013-02-06 株式会社コベルコ科研 Ａｌ−Ｎｉ−Ｌａ−Ｃｕ系Ａｌ基合金スパッタリングターゲットおよびその製造方法
WO2012086575A1 (ja) * 2010-12-22 2012-06-28 Jx日鉱日石金属株式会社 強磁性材スパッタリングターゲット
JP5863411B2 (ja) * 2011-11-17 2016-02-16 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
JP5646757B2 (ja) * 2012-01-25 2014-12-24 Jx日鉱日石金属株式会社 強磁性材スパッタリングターゲット
MY179240A (en) * 2012-02-23 2020-11-02 Jx Nippon Mining & Metals Corp Ferromagnetic material sputtering target containing chromium oxide
JP6083679B2 (ja) 2012-03-09 2017-02-22 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット及びその製造方法
WO2016035415A1 (ja) * 2014-09-04 2016-03-10 Ｊｘ金属株式会社 スパッタリングターゲット

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US5846648A (en) * 1994-01-28 1998-12-08 Komag, Inc. Magnetic alloy having a structured nucleation layer and method for manufacturing same
JPH0850715A (ja) * 1994-01-28 1996-02-20 Komag Inc 低ノイズ，高い保磁力および優れた方形度を有する磁気記録媒体および磁気記録媒体形成方法
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Also Published As

Publication number Publication date
CZ2005343A3 (cs) 2006-02-15
KR100776383B1 (ko) 2007-11-16
EP1607940A2 (de) 2005-12-21
US20050277002A1 (en) 2005-12-15
EP1607940A3 (de) 2006-02-15
CN1712551A (zh) 2005-12-28
KR20060046315A (ko) 2006-05-17
TW200604363A (en) 2006-02-01
JP2006004611A (ja) 2006-01-05

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