SG113602A1 - Method of predicting and minimizing model opc deviation due to mix/match of exposure tools using a calibrated eigen decomposition model - Google Patents
Method of predicting and minimizing model opc deviation due to mix/match of exposure tools using a calibrated eigen decomposition modelInfo
- Publication number
- SG113602A1 SG113602A1 SG200500540A SG200500540A SG113602A1 SG 113602 A1 SG113602 A1 SG 113602A1 SG 200500540 A SG200500540 A SG 200500540A SG 200500540 A SG200500540 A SG 200500540A SG 113602 A1 SG113602 A1 SG 113602A1
- Authority
- SG
- Singapore
- Prior art keywords
- model
- exposure tool
- predicting
- mix
- match
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53999704P | 2004-01-30 | 2004-01-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG113602A1 true SG113602A1 (en) | 2005-08-29 |
Family
ID=34837367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200500540A SG113602A1 (en) | 2004-01-30 | 2005-01-31 | Method of predicting and minimizing model opc deviation due to mix/match of exposure tools using a calibrated eigen decomposition model |
Country Status (8)
Country | Link |
---|---|
US (2) | US7242459B2 (ja) |
EP (1) | EP1560073B1 (ja) |
JP (1) | JP4761789B2 (ja) |
KR (1) | KR100824031B1 (ja) |
CN (1) | CN100472326C (ja) |
DE (1) | DE602005014291D1 (ja) |
SG (1) | SG113602A1 (ja) |
TW (1) | TWI305299B (ja) |
Families Citing this family (31)
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US7337425B2 (en) * | 2004-06-04 | 2008-02-26 | Ami Semiconductor, Inc. | Structured ASIC device with configurable die size and selectable embedded functions |
US7116411B2 (en) | 2004-08-26 | 2006-10-03 | Asml Masktools B.V. | Method of performing resist process calibration/optimization and DOE optimization for providing OPE matching between different lithography systems |
US7443486B2 (en) * | 2005-02-25 | 2008-10-28 | Asml Netherlands B.V. | Method for predicting a critical dimension of a feature imaged by a lithographic apparatus |
DE102005009536A1 (de) * | 2005-02-25 | 2006-08-31 | Carl Zeiss Sms Gmbh | Verfahren zur Maskeninspektion im Rahmen des Maskendesigns und der Maskenherstellung |
US7519940B2 (en) * | 2005-05-02 | 2009-04-14 | Cadence Design Systems, Inc. | Apparatus and method for compensating a lithography projection tool |
JP2007142275A (ja) * | 2005-11-21 | 2007-06-07 | Toshiba Corp | フォトマスクの判定方法、半導体装置の製造方法及びプログラム |
JP5235322B2 (ja) * | 2006-07-12 | 2013-07-10 | キヤノン株式会社 | 原版データ作成方法及び原版データ作成プログラム |
US8120753B2 (en) * | 2006-11-08 | 2012-02-21 | Asml Masktools B.V. | Method, program product and apparatus for generating a calibrated pupil kernel and method of using the same in a lithography simulation process |
US8365107B2 (en) | 2007-01-18 | 2013-01-29 | Nikon Corporation | Scanner based optical proximity correction system and method of use |
JP4989279B2 (ja) * | 2007-04-05 | 2012-08-01 | 株式会社東芝 | パラメータ値調整方法、半導体装置製造方法およびプログラム |
JP4484909B2 (ja) * | 2007-07-24 | 2010-06-16 | キヤノン株式会社 | 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム |
US7999920B2 (en) * | 2007-08-22 | 2011-08-16 | Asml Netherlands B.V. | Method of performing model-based scanner tuning |
NL1036189A1 (nl) * | 2007-12-05 | 2009-06-08 | Brion Tech Inc | Methods and System for Lithography Process Window Simulation. |
US7930657B2 (en) * | 2008-01-23 | 2011-04-19 | Micron Technology, Inc. | Methods of forming photomasks |
NL1036750A1 (nl) | 2008-04-14 | 2009-10-15 | Brion Tech Inc | A Method Of Performing Mask-Writer Tuning and Optimization. |
CN102057329B (zh) * | 2008-06-03 | 2013-08-21 | Asml荷兰有限公司 | 基于模型的过程模拟的方法 |
JP5300354B2 (ja) * | 2008-07-11 | 2013-09-25 | キヤノン株式会社 | 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム |
NL2003719A (en) * | 2008-11-10 | 2010-05-11 | Brion Tech Inc | Delta tcc for fast sensitivity model computation. |
NL2003716A (en) * | 2008-11-24 | 2010-05-26 | Brion Tech Inc | Harmonic resist model for use in a lithographic apparatus and a device manufacturing method. |
US8108805B2 (en) * | 2010-03-26 | 2012-01-31 | Tokyo Electron Limited | Simplified micro-bridging and roughness analysis |
JP5969848B2 (ja) * | 2012-07-19 | 2016-08-17 | キヤノン株式会社 | 露光装置、調整対象の調整量を求める方法、プログラム及びデバイスの製造方法 |
EP2952964A1 (en) * | 2014-06-03 | 2015-12-09 | Aselta Nanographics | Method for determining the parameters of an ic manufacturing process by a differential procedure |
CN105068383B (zh) * | 2015-08-05 | 2017-04-05 | 哈尔滨工业大学 | 一种微动台机械参数误差辨识方法 |
CN104977816B (zh) * | 2015-08-05 | 2018-01-23 | 哈尔滨工业大学 | 基于Compact Particle Swarm Optimization算法的光刻机掩模台微动台的机械参数软测量方法 |
EP3153924B1 (en) * | 2015-10-07 | 2021-11-17 | Aselta Nanographics | Method for determining the dose corrections to be applied to an ic manufacturing process by a matching procedure |
US10409168B2 (en) * | 2015-11-13 | 2019-09-10 | Asml Netherlands B.V. | Method of predicting performance of a lithographic apparatus, calibration of lithographic apparatus, device manufacturing method |
WO2018224349A1 (en) * | 2017-06-06 | 2018-12-13 | Asml Netherlands B.V. | Measurement method and apparatus |
US11422472B2 (en) | 2017-12-22 | 2022-08-23 | Asml Netherlands B.V. | Patterning process improvement involving optical aberration |
US10656528B1 (en) * | 2018-10-05 | 2020-05-19 | Synopsys, Inc. | Lithographic mask functions to model the incident angles of a partially coherent illumination |
CN112363372B (zh) * | 2020-11-19 | 2023-03-10 | 东方晶源微电子科技(北京)有限公司深圳分公司 | 一种负显影光刻工艺的仿真方法、负显影光刻胶模型、opc模型及电子设备 |
TWI817116B (zh) * | 2021-05-12 | 2023-10-01 | 和碩聯合科技股份有限公司 | 物件定位方法及物件定位系統 |
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JPH03174716A (ja) | 1989-08-07 | 1991-07-29 | Hitachi Ltd | 電子ビーム描画装置および描画方式 |
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JP3409493B2 (ja) | 1995-03-13 | 2003-05-26 | ソニー株式会社 | マスクパターンの補正方法および補正装置 |
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US6078738A (en) | 1997-05-08 | 2000-06-20 | Lsi Logic Corporation | Comparing aerial image to SEM of photoresist or substrate pattern for masking process characterization |
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TW552561B (en) * | 2000-09-12 | 2003-09-11 | Asml Masktools Bv | Method and apparatus for fast aerial image simulation |
US7099005B1 (en) * | 2000-09-27 | 2006-08-29 | Kla-Tencor Technologies Corporation | System for scatterometric measurements and applications |
JP2002190443A (ja) * | 2000-12-20 | 2002-07-05 | Hitachi Ltd | 露光方法およびその露光システム |
TWI285299B (en) * | 2001-04-04 | 2007-08-11 | Asml Netherlands Bv | Lithographic manufacturing process, lithographic projection apparatus, and device manufactured thereby |
JP2003059787A (ja) * | 2001-08-13 | 2003-02-28 | Sony Corp | シミュレーション方法および回路パターンの形成方法 |
DE10146499B4 (de) * | 2001-09-21 | 2006-11-09 | Carl Zeiss Smt Ag | Verfahren zur Optimierung der Abbildungseigenschaften von mindestens zwei optischen Elementen sowie Verfahren zur Optimierung der Abbildungseigenschaften von mindestens drei optischen Elementen |
US7175940B2 (en) * | 2001-10-09 | 2007-02-13 | Asml Masktools B.V. | Method of two dimensional feature model calibration and optimization |
JP3886820B2 (ja) * | 2002-02-14 | 2007-02-28 | 株式会社東芝 | 露光装置の事前引当システム、露光装置の事前引当方法、及び露光装置の事前引当プログラム |
DE10216986A1 (de) * | 2002-04-16 | 2003-10-30 | Heidenhain Gmbh Dr Johannes | Verfahren zum Überprüfen eines Umrichters |
US6777147B1 (en) * | 2003-05-21 | 2004-08-17 | International Business Machines Corporation | Method for evaluating the effects of multiple exposure processes in lithography |
US7003758B2 (en) * | 2003-10-07 | 2006-02-21 | Brion Technologies, Inc. | System and method for lithography simulation |
DE102004006262B9 (de) | 2004-02-09 | 2006-12-21 | Infineon Technologies Ag | Abbildungseinrichtung und Verfahren zum Entwerfen einer Abbildungseinrichtung |
-
2005
- 2005-01-28 KR KR1020050008040A patent/KR100824031B1/ko active IP Right Grant
- 2005-01-28 US US11/044,711 patent/US7242459B2/en active Active
- 2005-01-29 CN CNB2005100541766A patent/CN100472326C/zh active Active
- 2005-01-31 TW TW094102910A patent/TWI305299B/zh active
- 2005-01-31 EP EP05250494A patent/EP1560073B1/en not_active Expired - Fee Related
- 2005-01-31 SG SG200500540A patent/SG113602A1/en unknown
- 2005-01-31 DE DE602005014291T patent/DE602005014291D1/de not_active Expired - Fee Related
- 2005-01-31 JP JP2005054573A patent/JP4761789B2/ja active Active
-
2007
- 2007-06-27 US US11/819,366 patent/US7440082B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI305299B (en) | 2009-01-11 |
DE602005014291D1 (de) | 2009-06-18 |
EP1560073A3 (en) | 2008-05-14 |
KR20050078234A (ko) | 2005-08-04 |
JP4761789B2 (ja) | 2011-08-31 |
JP2005217430A (ja) | 2005-08-11 |
EP1560073A2 (en) | 2005-08-03 |
EP1560073B1 (en) | 2009-05-06 |
CN1683998A (zh) | 2005-10-19 |
CN100472326C (zh) | 2009-03-25 |
US20070247610A1 (en) | 2007-10-25 |
US20050179886A1 (en) | 2005-08-18 |
KR100824031B1 (ko) | 2008-04-21 |
TW200538890A (en) | 2005-12-01 |
US7440082B2 (en) | 2008-10-21 |
US7242459B2 (en) | 2007-07-10 |
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