SG11202101338UA - Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Info

Publication number
SG11202101338UA
SG11202101338UA SG11202101338UA SG11202101338UA SG11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA SG 11202101338U A SG11202101338U A SG 11202101338UA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
same
mask blank
Prior art date
Application number
SG11202101338UA
Other languages
English (en)
Inventor
Mizuki KATAOKA
Yohei IKEBE
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202101338UA publication Critical patent/SG11202101338UA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
SG11202101338UA 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device SG11202101338UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018159970A JP2020034666A (ja) 2018-08-29 2018-08-29 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
PCT/JP2019/031361 WO2020045029A1 (fr) 2018-08-29 2019-08-08 Ébauche de masque réfléchissant, masque réfléchissant et procédé de fabrication associé, et procédé de fabrication de dispositif à semi-conducteur

Publications (1)

Publication Number Publication Date
SG11202101338UA true SG11202101338UA (en) 2021-03-30

Family

ID=69644897

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202101338UA SG11202101338UA (en) 2018-08-29 2019-08-08 Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US11892768B2 (fr)
JP (1) JP2020034666A (fr)
KR (1) KR20210043563A (fr)
SG (1) SG11202101338UA (fr)
TW (1) TW202027130A (fr)
WO (1) WO2020045029A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102285099B1 (ko) 2020-01-08 2021-08-04 주식회사 에스앤에스텍 극자외선용 반사형 블랭크 마스크 및 포토마스크
JP2023000073A (ja) * 2021-06-17 2023-01-04 株式会社トッパンフォトマスク 反射型フォトマスク及び反射型フォトマスクの製造方法
JP7346527B2 (ja) * 2021-11-25 2023-09-19 Hoya株式会社 マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2909317B2 (ja) * 1992-08-20 1999-06-23 三菱電機株式会社 フォトマスク
US6656643B2 (en) 2001-02-20 2003-12-02 Chartered Semiconductor Manufacturing Ltd. Method of extreme ultraviolet mask engineering
JP2002299227A (ja) * 2001-04-03 2002-10-11 Nikon Corp 反射マスクとその製造方法及び露光装置
EP2317383A3 (fr) * 2002-04-11 2011-12-28 HOYA Corporation Ébauche de masque réfléchissant, masque réfléchissant et procédés de fabrication de l'ébauche de masque et masque
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP2004207593A (ja) 2002-12-26 2004-07-22 Toppan Printing Co Ltd 極限紫外線露光用マスク及びブランク並びにパターン転写方法
US7049035B2 (en) * 2003-11-17 2006-05-23 International Business Machines Corporation Method for controlling linewidth in advanced lithography masks using electrochemistry
US20060222961A1 (en) * 2005-03-31 2006-10-05 Pei-Yang Yan Leaky absorber for extreme ultraviolet mask
JP4465405B2 (ja) * 2008-02-27 2010-05-19 Ｈｏｙａ株式会社 フォトマスクブランクおよびフォトマスク並びにこれらの製造方法
JP5282507B2 (ja) 2008-09-25 2013-09-04 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
US8765331B2 (en) * 2012-08-17 2014-07-01 International Business Machines Corporation Reducing edge die reflectivity in extreme ultraviolet lithography
JP6661262B2 (ja) * 2014-05-29 2020-03-11 Hoya株式会社 位相シフトマスクブランク及びその製造方法、並びに位相シフトマスクの製造方法
US9436078B2 (en) * 2015-01-30 2016-09-06 Globalfoundries Inc. Method for a low profile etchable EUV absorber layer with embedded particles in a photolithography mask
KR101772943B1 (ko) * 2015-08-17 2017-09-12 주식회사 에스앤에스텍 극자외선용 블랭크 마스크 및 이를 이용한 포토마스크
TWI821984B (zh) * 2016-07-27 2023-11-11 美商應用材料股份有限公司 具有合金吸收劑的極紫外線遮罩坯料及製造極紫外線遮罩坯料的方法
WO2018074512A1 (fr) * 2016-10-21 2018-04-26 Hoya株式会社 Ébauche de masque réfléchissant, procédé de production de masque réfléchissant et procédé de production de dispositif à semi-conducteurs
WO2018135468A1 (fr) * 2017-01-17 2018-07-26 Hoya株式会社 Substrat doté d'un film conducteur, substrat doté d'un film réfléchissant multicouche, ébauche de masque réfléchissant, masque réfléchissant et procédé de fabrication de dispositif semi-conducteur
JP7082606B2 (ja) * 2017-03-02 2022-06-08 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Also Published As

Publication number Publication date
US11892768B2 (en) 2024-02-06
TW202027130A (zh) 2020-07-16
WO2020045029A1 (fr) 2020-03-05
JP2020034666A (ja) 2020-03-05
KR20210043563A (ko) 2021-04-21
US20210311382A1 (en) 2021-10-07

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