SG11202009530VA - Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material - Google Patents
Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt materialInfo
- Publication number
- SG11202009530VA SG11202009530VA SG11202009530VA SG11202009530VA SG11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA
- Authority
- SG
- Singapore
- Prior art keywords
- crystalline layer
- pzt material
- substrate
- manufacturing
- epitaxially growing
- Prior art date
Links
- 239000000463 material Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1800253A FR3079531B1 (fr) | 2018-03-28 | 2018-03-28 | Procede de fabrication d'une couche monocristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche monocristalline de materiau pzt |
PCT/IB2019/000201 WO2019186264A1 (fr) | 2018-03-28 | 2019-03-26 | Procede de fabrication d'une couche cristalline de materiau pzt et substrat pour croissance par epitaxie d'une couche cristalline de materiau pzt |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202009530VA true SG11202009530VA (en) | 2020-10-29 |
Family
ID=63834052
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202009530VA SG11202009530VA (en) | 2018-03-28 | 2019-03-26 | Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material |
Country Status (8)
Country | Link |
---|---|
US (2) | US11877514B2 (fr) |
EP (1) | EP3775332A1 (fr) |
JP (1) | JP7451845B2 (fr) |
KR (1) | KR102636121B1 (fr) |
CN (1) | CN111918986A (fr) |
FR (1) | FR3079531B1 (fr) |
SG (1) | SG11202009530VA (fr) |
WO (1) | WO2019186264A1 (fr) |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05234419A (ja) * | 1991-11-21 | 1993-09-10 | Toshiba Corp | 誘電体を用いた素子 |
US5442585A (en) * | 1992-09-11 | 1995-08-15 | Kabushiki Kaisha Toshiba | Device having dielectric thin film |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
EP1482549B1 (fr) * | 2003-05-27 | 2011-03-30 | S.O.I. Tec Silicon on Insulator Technologies S.A. | Procédé pour la fabrication d'une microstructure heteroepitaxiale |
FR2835096B1 (fr) * | 2002-01-22 | 2005-02-18 | Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin | |
FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
US7407869B2 (en) * | 2000-11-27 | 2008-08-05 | S.O.I.Tec Silicon On Insulator Technologies | Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material |
US6593212B1 (en) * | 2001-10-29 | 2003-07-15 | The United States Of America As Represented By The Secretary Of The Navy | Method for making electro-optical devices using a hydrogenion splitting technique |
JP4100953B2 (ja) | 2002-04-18 | 2008-06-11 | キヤノン株式会社 | Si基板上に単結晶酸化物導電体を有する積層体及びそれを用いたアクチュエーター及びインクジェットヘッドとその製造方法 |
JP4401300B2 (ja) | 2003-03-04 | 2010-01-20 | 富士通株式会社 | (001)配向したペロブスカイト膜の形成方法、およびかかるペロブスカイト膜を有する装置 |
FR2883659B1 (fr) | 2005-03-24 | 2007-06-22 | Soitec Silicon On Insulator | Procede de fabrication d'une hetero-structure comportant au moins une couche epaisse de materiau semi-conducteur |
US20060288928A1 (en) | 2005-06-10 | 2006-12-28 | Chang-Beom Eom | Perovskite-based thin film structures on miscut semiconductor substrates |
US20120000415A1 (en) | 2010-06-18 | 2012-01-05 | Soraa, Inc. | Large Area Nitride Crystal and Method for Making It |
US9564320B2 (en) * | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
US20150014853A1 (en) | 2013-07-09 | 2015-01-15 | Harper Laboratories, LLC | Semiconductor devices comprising edge doped graphene and methods of making the same |
US9064789B2 (en) * | 2013-08-12 | 2015-06-23 | International Business Machines Corporation | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates |
WO2016203955A1 (fr) | 2015-06-18 | 2016-12-22 | コニカミノルタ株式会社 | Élément piézoélectrique, tête à jet d'encre, imprimante à jet d'encre, et procédé de fabrication d'élément piézoélectrique |
FR3041364B1 (fr) | 2015-09-18 | 2017-10-06 | Soitec Silicon On Insulator | Procede de transfert de paves monocristallins |
JP6776074B2 (ja) | 2016-09-16 | 2020-10-28 | 株式会社東芝 | 圧電デバイスおよび超音波装置 |
FR3079535B1 (fr) * | 2018-03-28 | 2022-03-18 | Soitec Silicon On Insulator | Procede de fabrication d'une couche monocristalline de materiau diamant ou iridium et substrat pour croissance par epitaxie d'une couche monocristalline de materiau diamant ou iridium |
-
2018
- 2018-03-28 FR FR1800253A patent/FR3079531B1/fr active Active
-
2019
- 2019-03-26 WO PCT/IB2019/000201 patent/WO2019186264A1/fr unknown
- 2019-03-26 US US17/042,657 patent/US11877514B2/en active Active
- 2019-03-26 CN CN201980021417.7A patent/CN111918986A/zh active Pending
- 2019-03-26 KR KR1020207030290A patent/KR102636121B1/ko active IP Right Grant
- 2019-03-26 JP JP2020549791A patent/JP7451845B2/ja active Active
- 2019-03-26 EP EP19722177.3A patent/EP3775332A1/fr active Pending
- 2019-03-26 SG SG11202009530VA patent/SG11202009530VA/en unknown
-
2023
- 2023-09-11 US US18/464,918 patent/US20230422619A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20210074906A1 (en) | 2021-03-11 |
US11877514B2 (en) | 2024-01-16 |
KR20200136436A (ko) | 2020-12-07 |
WO2019186264A1 (fr) | 2019-10-03 |
FR3079531A1 (fr) | 2019-10-04 |
KR102636121B1 (ko) | 2024-02-13 |
EP3775332A1 (fr) | 2021-02-17 |
JP7451845B2 (ja) | 2024-03-19 |
US20230422619A1 (en) | 2023-12-28 |
FR3079531B1 (fr) | 2022-03-18 |
JP2021518321A (ja) | 2021-08-02 |
CN111918986A (zh) | 2020-11-10 |
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