SG11202009530VA - Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material - Google Patents

Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material

Info

Publication number
SG11202009530VA
SG11202009530VA SG11202009530VA SG11202009530VA SG11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA SG 11202009530V A SG11202009530V A SG 11202009530VA
Authority
SG
Singapore
Prior art keywords
crystalline layer
pzt material
substrate
manufacturing
epitaxially growing
Prior art date
Application number
SG11202009530VA
Inventor
Bruno Ghyselen
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11202009530VA publication Critical patent/SG11202009530VA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H10N30/708—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H10N30/8554—Lead zirconium titanate based
SG11202009530VA 2018-03-28 2019-03-26 Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material SG11202009530VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1800253A FR3079531B1 (en) 2018-03-28 2018-03-28 METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF PZT MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF PZT MATERIAL
PCT/IB2019/000201 WO2019186264A1 (en) 2018-03-28 2019-03-26 Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material

Publications (1)

Publication Number Publication Date
SG11202009530VA true SG11202009530VA (en) 2020-10-29

Family

ID=63834052

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202009530VA SG11202009530VA (en) 2018-03-28 2019-03-26 Method for manufacturing a crystalline layer of pzt material, and substrate for epitaxially growing a crystalline layer of pzt material

Country Status (8)

Country Link
US (2) US11877514B2 (en)
EP (1) EP3775332A1 (en)
JP (1) JP7451845B2 (en)
KR (1) KR102636121B1 (en)
CN (1) CN111918986A (en)
FR (1) FR3079531B1 (en)
SG (1) SG11202009530VA (en)
WO (1) WO2019186264A1 (en)

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05234419A (en) * 1991-11-21 1993-09-10 Toshiba Corp Element using dielectric
US5442585A (en) * 1992-09-11 1995-08-15 Kabushiki Kaisha Toshiba Device having dielectric thin film
FR2835096B1 (en) * 2002-01-22 2005-02-18 PROCESS FOR MANUFACTURING SELF-CARRIER SUBSTRATE OF SINGLE-CRYSTALLINE SEMICONDUCTOR MATERIAL
US8507361B2 (en) 2000-11-27 2013-08-13 Soitec Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US7407869B2 (en) * 2000-11-27 2008-08-05 S.O.I.Tec Silicon On Insulator Technologies Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material
FR2817395B1 (en) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A SUBSTRATE, IN PARTICULAR FOR OPTICS, ELECTRONICS OR OPTOELECTRONICS AND SUBSTRATE OBTAINED THEREBY
US6593212B1 (en) * 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
JP4100953B2 (en) 2002-04-18 2008-06-11 キヤノン株式会社 LAMINATE HAVING SINGLE CRYSTAL OXIDE CONDUCTOR ON Si SUBSTRATE, ACTUATOR USING SAME, INKJET HEAD, AND MANUFACTURING METHOD THEREOF
WO2004079059A1 (en) 2003-03-04 2004-09-16 Fujitsu Limited (001)-orientated perovskite film formation method and device having perovskite film
ATE504082T1 (en) * 2003-05-27 2011-04-15 Soitec Silicon On Insulator METHOD FOR PRODUCING A HETEROEPITACTIC MICROSTRUCTURE
FR2883659B1 (en) 2005-03-24 2007-06-22 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A HETERO-STRUCTURE COMPRISING AT LEAST ONE THICK LAYER OF SEMICONDUCTOR MATERIAL
US20060288928A1 (en) * 2005-06-10 2006-12-28 Chang-Beom Eom Perovskite-based thin film structures on miscut semiconductor substrates
US20120000415A1 (en) 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US9564320B2 (en) * 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20150014853A1 (en) 2013-07-09 2015-01-15 Harper Laboratories, LLC Semiconductor devices comprising edge doped graphene and methods of making the same
US9064789B2 (en) * 2013-08-12 2015-06-23 International Business Machines Corporation Bonded epitaxial oxide structures for compound semiconductor on silicon substrates
JP6720973B2 (en) * 2015-06-18 2020-07-08 コニカミノルタ株式会社 Piezoelectric element, inkjet head, inkjet printer, and method for manufacturing piezoelectric element
FR3041364B1 (en) 2015-09-18 2017-10-06 Soitec Silicon On Insulator PROCESS FOR TRANSFERRING SINGLE CRYSTAL PAVES
JP6776074B2 (en) 2016-09-16 2020-10-28 株式会社東芝 Piezoelectric devices and ultrasonic devices
FR3079535B1 (en) * 2018-03-28 2022-03-18 Soitec Silicon On Insulator METHOD FOR MANUFACTURING A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL AND SUBSTRATE FOR GROWTH BY EPITAXIS OF A MONOCRYSTALLINE LAYER OF DIAMOND OR IRIDIUM MATERIAL

Also Published As

Publication number Publication date
JP2021518321A (en) 2021-08-02
KR102636121B1 (en) 2024-02-13
US11877514B2 (en) 2024-01-16
US20230422619A1 (en) 2023-12-28
KR20200136436A (en) 2020-12-07
WO2019186264A1 (en) 2019-10-03
FR3079531A1 (en) 2019-10-04
US20210074906A1 (en) 2021-03-11
FR3079531B1 (en) 2022-03-18
JP7451845B2 (en) 2024-03-19
EP3775332A1 (en) 2021-02-17
CN111918986A (en) 2020-11-10

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