SG11201913310RA - Etching method and etching device - Google Patents

Etching method and etching device

Info

Publication number
SG11201913310RA
SG11201913310RA SG11201913310RA SG11201913310RA SG11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA SG 11201913310R A SG11201913310R A SG 11201913310RA
Authority
SG
Singapore
Prior art keywords
etching
etching method
etching device
Prior art date
Application number
SG11201913310RA
Other languages
English (en)
Inventor
Akitaka Shimizu
Shuichiro Uda
Takeshi Saito
Taiki Kato
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11201913310RA publication Critical patent/SG11201913310RA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Robotics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
SG11201913310RA 2017-06-30 2018-05-11 Etching method and etching device SG11201913310RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017128222A JP6929148B2 (ja) 2017-06-30 2017-06-30 エッチング方法およびエッチング装置
PCT/JP2018/018364 WO2019003663A1 (ja) 2017-06-30 2018-05-11 エッチング方法およびエッチング装置

Publications (1)

Publication Number Publication Date
SG11201913310RA true SG11201913310RA (en) 2020-01-30

Family

ID=64741426

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201913310RA SG11201913310RA (en) 2017-06-30 2018-05-11 Etching method and etching device

Country Status (7)

Country Link
US (1) US11443952B2 (ko)
JP (1) JP6929148B2 (ko)
KR (1) KR102576634B1 (ko)
CN (1) CN110809817B (ko)
SG (1) SG11201913310RA (ko)
TW (1) TWI791540B (ko)
WO (1) WO2019003663A1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7120098B2 (ja) * 2019-03-19 2022-08-17 新東工業株式会社 テトラヒドロほう酸塩の製造装置、及びテトラヒドロほう酸塩の製造方法
JP7221115B2 (ja) * 2019-04-03 2023-02-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11651969B2 (en) * 2019-07-18 2023-05-16 Kioxia Corporation Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
JP7413093B2 (ja) * 2019-07-18 2024-01-15 キオクシア株式会社 エッチング方法、半導体製造装置、および半導体装置の製造方法
US20220336194A1 (en) * 2019-09-17 2022-10-20 Tokyo Electron Limited Plasma processing apparatus
JP7394694B2 (ja) * 2019-09-17 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置
JP7030858B2 (ja) 2020-01-06 2022-03-07 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
JP7323476B2 (ja) * 2020-02-19 2023-08-08 住友電気工業株式会社 半導体装置の製造方法
JP2021153141A (ja) * 2020-03-24 2021-09-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
CN111900075A (zh) * 2020-06-22 2020-11-06 中国科学院微电子研究所 一种氮化硅膜及其沉积方法、半导体器件
JP7174016B2 (ja) * 2020-07-16 2022-11-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP7450512B2 (ja) * 2020-10-07 2024-03-15 東京エレクトロン株式会社 基板処理方法及び基板処理装置
KR20220097202A (ko) * 2020-12-31 2022-07-07 세메스 주식회사 기판 처리 방법 및 기판 처리 장치
US20230386793A1 (en) * 2021-02-19 2023-11-30 Hitachi High-Tech Corporation Etching method and etching apparatus
CN117157734A (zh) * 2022-03-29 2023-12-01 株式会社国际电气 衬底处理方法、半导体器件的制造方法、程序及衬底处理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07335612A (ja) * 1994-06-13 1995-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP4071069B2 (ja) * 2002-08-28 2008-04-02 東京エレクトロン株式会社 絶縁膜のエッチング方法
JP4877747B2 (ja) * 2006-03-23 2012-02-15 東京エレクトロン株式会社 プラズマエッチング方法
JP4833878B2 (ja) 2007-01-31 2011-12-07 東京エレクトロン株式会社 基板の処理方法及び基板処理装置
US8119545B2 (en) * 2008-03-31 2012-02-21 Tokyo Electron Limited Forming a silicon nitride film by plasma CVD
US8999856B2 (en) * 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130045605A1 (en) * 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8679982B2 (en) * 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
EP2854160B1 (en) * 2012-05-23 2020-04-08 Tokyo Electron Limited Substrate processing method
JP2014049466A (ja) * 2012-08-29 2014-03-17 Tokyo Electron Ltd エッチング処理方法及び基板処理装置
JP2015073035A (ja) 2013-10-03 2015-04-16 東京エレクトロン株式会社 エッチング方法
JP6239339B2 (ja) * 2013-10-17 2017-11-29 東京エレクトロン株式会社 エッチング装置、エッチング方法、および基板載置機構
US20150371865A1 (en) * 2014-06-19 2015-12-24 Applied Materials, Inc. High selectivity gas phase silicon nitride removal
JP2016058590A (ja) * 2014-09-11 2016-04-21 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6426489B2 (ja) * 2015-02-03 2018-11-21 東京エレクトロン株式会社 エッチング方法

Also Published As

Publication number Publication date
KR20200019983A (ko) 2020-02-25
US20210151326A1 (en) 2021-05-20
US11443952B2 (en) 2022-09-13
CN110809817B (zh) 2024-03-15
JP6929148B2 (ja) 2021-09-01
JP2019012759A (ja) 2019-01-24
CN110809817A (zh) 2020-02-18
TWI791540B (zh) 2023-02-11
KR102576634B1 (ko) 2023-09-11
WO2019003663A1 (ja) 2019-01-03
TW201921482A (zh) 2019-06-01

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