SG11201909268PA - Positive type photosensitive siloxane composition and cured film formed by using the same - Google Patents

Positive type photosensitive siloxane composition and cured film formed by using the same

Info

Publication number
SG11201909268PA
SG11201909268PA SG11201909268PA SG11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA
Authority
SG
Singapore
Prior art keywords
international
type photosensitive
cured film
positive type
go3f
Prior art date
Application number
Other languages
English (en)
Inventor
Naofumi Yoshida
Megumi Takahashi
Katsuto Taniguchi
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11201909268PA publication Critical patent/SG11201909268PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
SG11201909268P 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same SG11201909268PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017090311A JP2018189732A (ja) 2017-04-28 2017-04-28 ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜
PCT/EP2018/060540 WO2018197535A1 (en) 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same

Publications (1)

Publication Number Publication Date
SG11201909268PA true SG11201909268PA (en) 2019-11-28

Family

ID=62134150

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909268P SG11201909268PA (en) 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same

Country Status (7)

Country Link
US (1) US11392032B2 (zh)
JP (2) JP2018189732A (zh)
KR (1) KR102610345B1 (zh)
CN (1) CN110709773B (zh)
SG (1) SG11201909268PA (zh)
TW (1) TWI772411B (zh)
WO (1) WO2018197535A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7282667B2 (ja) * 2019-01-22 2023-05-29 信越化学工業株式会社 ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法
JP6639724B1 (ja) * 2019-03-15 2020-02-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポジ型感光性ポリシロキサン組成物

Family Cites Families (21)

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US3695886A (en) 1970-09-29 1972-10-03 Ibm High speed azide resists
EP2036721B1 (en) * 2000-11-30 2011-02-09 FUJIFILM Corporation Planographic printing plate precursor
US7358032B2 (en) * 2002-11-08 2008-04-15 Fujifilm Corporation Planographic printing plate precursor
US7585613B2 (en) 2006-01-25 2009-09-08 Shin-Etsu Chemical Co., Ltd. Antireflection film composition, substrate, and patterning process
JP5233526B2 (ja) 2008-09-05 2013-07-10 東レ株式会社 感光性組成物、それから形成された硬化膜、および硬化膜を有する素子
JP2010117696A (ja) * 2008-10-17 2010-05-27 Hitachi Chem Co Ltd 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
US8883397B2 (en) 2010-08-24 2014-11-11 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
JP5726632B2 (ja) * 2011-05-19 2015-06-03 メルクパフォーマンスマテリアルズＩｐ合同会社 感光性シロキサン樹脂組成物
JP6043716B2 (ja) * 2011-05-20 2016-12-14 メルク パテント ゲーエムベーハー ポジ型感光性シロキサン組成物
JP2013114238A (ja) 2011-12-01 2013-06-10 Toray Ind Inc ポジ型感光性組成物、そのポジ型感光性組成物から形成された硬化膜、およびその硬化膜を有する素子。
EP2799928B1 (en) 2011-12-26 2019-05-22 Toray Industries, Inc. Photosensitive resin composition and process for producing semiconductor element
TWI567498B (zh) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 負型感光性矽氧烷組成物
JP6013150B2 (ja) * 2012-11-22 2016-10-25 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ポジ型感光性シロキサン組成物の製造方法
TWI479269B (zh) * 2012-12-25 2015-04-01 Chi Mei Corp 感光性聚矽氧烷組成物及其應用
JP6466087B2 (ja) * 2013-06-14 2019-02-06 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 低温硬化可能なネガ型感光性組成物
TWI518460B (zh) 2013-08-13 2016-01-21 Chi Mei Corp Photosensitive polysiloxane compositions and their use
JP6323225B2 (ja) * 2013-11-01 2018-05-16 セントラル硝子株式会社 ポジ型感光性樹脂組成物、それを用いた膜の製造方法および電子部品
KR102369818B1 (ko) * 2015-01-13 2022-03-04 주식회사 동진쎄미켐 포지티브형 감광성 실록산 수지 조성물
JP2017151209A (ja) 2016-02-23 2017-08-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ポジ型感光性シロキサン組成物
WO2018034460A1 (en) 2016-08-19 2018-02-22 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom
KR102472280B1 (ko) * 2016-08-19 2022-12-01 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막

Also Published As

Publication number Publication date
KR20190137928A (ko) 2019-12-11
KR102610345B1 (ko) 2023-12-07
JP2018189732A (ja) 2018-11-29
TWI772411B (zh) 2022-08-01
TW201901296A (zh) 2019-01-01
JP2020517983A (ja) 2020-06-18
JP7149958B2 (ja) 2022-10-07
WO2018197535A1 (en) 2018-11-01
CN110709773A (zh) 2020-01-17
CN110709773B (zh) 2024-02-09
US11392032B2 (en) 2022-07-19
US20200073241A1 (en) 2020-03-05

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