SG11201909268PA - Positive type photosensitive siloxane composition and cured film formed by using the same - Google Patents

Positive type photosensitive siloxane composition and cured film formed by using the same

Info

Publication number
SG11201909268PA
SG11201909268PA SG11201909268PA SG11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA SG 11201909268P A SG11201909268P A SG 11201909268PA
Authority
SG
Singapore
Prior art keywords
international
type photosensitive
cured film
positive type
go3f
Prior art date
Application number
Inventor
Naofumi Yoshida
Megumi Takahashi
Katsuto Taniguchi
Original Assignee
Merck Patent Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent Gmbh filed Critical Merck Patent Gmbh
Publication of SG11201909268PA publication Critical patent/SG11201909268PA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromonomer-Based Addition Polymer (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 01 November 2018 (01.11.2018) WIPO I PCT oimiolo VIII °nolo VIII ID Imio oimIE (10) International Publication Number WO 2018/197535 Al (51) International Patent Classification: GO3F 7/022 (2006.01) G03F 7/031 (2006.01) GO3F 7/023 (2006.01) GO3F 7/075 (2006.01) (21) International Application Number: PCT/EP2018/060540 (22) International Filing Date: 25 April 2018 (25.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 2017-090311 28 April 2017 (28.04.2017) JP (71) Applicant: MERCK PATENT GMBH [DE/DE]; Frank- furter Strasse 250, 64293 Darmstadt (DE). (72) Inventors: YOSHIDA, Naofumi; c/o Merck Performance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). TAKAHASHI, Megumi; c/o Merck Per- formance Materials Ltd., 3330, Chihama, Kakegawa-shi, Shizuoka 437-1412 (JP). TANIGUCHI, Katsuto; c/o Mer- ck Performance Materials Ltd., 3330, Chihama, Kakegawa- shi, Shizuoka 437-1412 (JP). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) — before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) 1-1 N 0\ 1-1 00 O 1-1 N C (54) Title: POSITIVE TYPE PHOTOSENSITIVE SILOXANE COMPOSITION AND CURED FILM FORMED BY USING THE SAME (57) : [] To provide a positive type photosensitive composition capable of forming a cured film having high transparency [Means] The present invention provides apositive type photosensitive siloxane composition comprising: a polysiloxane, a diazonaph- thoquinone derivative, an additive having a quaternaryammonium structureandthecapability of interacting with the polysiloxane, and a solvent. The polysiloxane and the additive interact with each other before exposure, but they lose the interaction after exposure.
SG11201909268P 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same SG11201909268PA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017090311A JP2018189732A (en) 2017-04-28 2017-04-28 Positive type photosensitive siloxane composition and cured film formed by using the same
PCT/EP2018/060540 WO2018197535A1 (en) 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same

Publications (1)

Publication Number Publication Date
SG11201909268PA true SG11201909268PA (en) 2019-11-28

Family

ID=62134150

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201909268P SG11201909268PA (en) 2017-04-28 2018-04-25 Positive type photosensitive siloxane composition and cured film formed by using the same

Country Status (7)

Country Link
US (1) US11392032B2 (en)
JP (2) JP2018189732A (en)
KR (1) KR102610345B1 (en)
CN (1) CN110709773B (en)
SG (1) SG11201909268PA (en)
TW (1) TWI772411B (en)
WO (1) WO2018197535A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7282667B2 (en) 2019-01-22 2023-05-29 信越化学工業株式会社 Composition for forming silicon-containing resist underlayer film and pattern forming method
JP6639724B1 (en) * 2019-03-15 2020-02-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Positive photosensitive polysiloxane composition

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US3695886A (en) 1970-09-29 1972-10-03 Ibm High speed azide resists
ATE420767T1 (en) * 2000-11-30 2009-01-15 Fujifilm Corp LITHOGRAPHIC PRINTING PLATE PRECURSORS
US7358032B2 (en) * 2002-11-08 2008-04-15 Fujifilm Corporation Planographic printing plate precursor
US7585613B2 (en) * 2006-01-25 2009-09-08 Shin-Etsu Chemical Co., Ltd. Antireflection film composition, substrate, and patterning process
JP5233526B2 (en) 2008-09-05 2013-07-10 東レ株式会社 Photosensitive composition, cured film formed therefrom, and device having cured film
JP2010117696A (en) * 2008-10-17 2010-05-27 Hitachi Chem Co Ltd Photosensitive resin composition, method for forming silica-based film, and device and member including silica-based film
JP5707407B2 (en) 2010-08-24 2015-04-30 メルクパフォーマンスマテリアルズＩｐ合同会社 Positive photosensitive siloxane composition
JP5726632B2 (en) * 2011-05-19 2015-06-03 メルクパフォーマンスマテリアルズＩｐ合同会社 Photosensitive siloxane resin composition
CN103534646B (en) * 2011-05-20 2016-04-20 默克专利有限公司 Positive type photo-sensitive siloxane composition
JP2013114238A (en) 2011-12-01 2013-06-10 Toray Ind Inc Positive photosensitive composition, cured film formed of the positive photosensitive composition and element having the cured film
JP6241035B2 (en) 2011-12-26 2017-12-06 東レ株式会社 Photosensitive resin composition and method for producing semiconductor element
TWI567498B (en) * 2012-04-06 2017-01-21 Ａｚ電子材料盧森堡有限公司 Negative-type photosensitive siloxane composition
JP6013150B2 (en) * 2012-11-22 2016-10-25 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 Method for producing positive photosensitive siloxane composition
TWI479269B (en) * 2012-12-25 2015-04-01 Chi Mei Corp Photosensitive polysiloxane composition and uses thereof
JP6466087B2 (en) * 2013-06-14 2019-02-06 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Negative photosensitive composition that can be cured at low temperature
TWI518460B (en) 2013-08-13 2016-01-21 Chi Mei Corp Photosensitive polysiloxane compositions and their use
JP6323225B2 (en) * 2013-11-01 2018-05-16 セントラル硝子株式会社 Positive photosensitive resin composition, film production method using the same, and electronic component
KR102369818B1 (en) 2015-01-13 2022-03-04 주식회사 동진쎄미켐 Positive photosensitive siloxane resin composition
JP2017151209A (en) 2016-02-23 2017-08-31 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ Positive photosensitive siloxane composition
KR102472280B1 (en) 2016-08-19 2022-12-01 롬엔드하스전자재료코리아유한회사 Photosensitive resin composition and cured film prepared therefrom
WO2018034460A1 (en) * 2016-08-19 2018-02-22 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom

Also Published As

Publication number Publication date
US11392032B2 (en) 2022-07-19
US20200073241A1 (en) 2020-03-05
KR20190137928A (en) 2019-12-11
KR102610345B1 (en) 2023-12-07
CN110709773B (en) 2024-02-09
CN110709773A (en) 2020-01-17
JP2018189732A (en) 2018-11-29
WO2018197535A1 (en) 2018-11-01
JP2020517983A (en) 2020-06-18
JP7149958B2 (en) 2022-10-07
TW201901296A (en) 2019-01-01
TWI772411B (en) 2022-08-01

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