SG11201908654UA - Tungsten target - Google Patents

Tungsten target

Info

Publication number
SG11201908654UA
SG11201908654UA SG11201908654UA SG11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA SG 11201908654U A SG11201908654U A SG 11201908654UA
Authority
SG
Singapore
Prior art keywords
area ratio
planes
target
sputtering
sputtering surface
Prior art date
Application number
Other languages
English (en)
Inventor
Takafumi Dasai
Shinichiro Senda
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201908654UA publication Critical patent/SG11201908654UA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201908654U 2017-03-31 2018-01-26 Tungsten target SG11201908654UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017070390A JP7174476B2 (ja) 2017-03-31 2017-03-31 タングステンターゲット
PCT/JP2018/002559 WO2018179770A1 (ja) 2017-03-31 2018-01-26 タングステンターゲット

Publications (1)

Publication Number Publication Date
SG11201908654UA true SG11201908654UA (en) 2019-10-30

Family

ID=63674584

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908654U SG11201908654UA (en) 2017-03-31 2018-01-26 Tungsten target

Country Status (8)

Country Link
US (1) US11939647B2 (zh)
EP (1) EP3604612B1 (zh)
JP (1) JP7174476B2 (zh)
KR (1) KR20190120292A (zh)
CN (2) CN110234790A (zh)
SG (1) SG11201908654UA (zh)
TW (1) TWI663275B (zh)
WO (1) WO2018179770A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112771199B (zh) * 2018-09-26 2024-01-16 Ｊｘ金属株式会社 溅射靶及其制造方法
JP7043680B2 (ja) * 2019-03-22 2022-03-29 株式会社東芝 放電ランプ用カソード部品および放電ランプ
CN112126902A (zh) * 2020-09-14 2020-12-25 浙江最成半导体科技有限公司 一种半导体用高纯钨靶材及其制备方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4885065A (zh) 1972-02-16 1973-11-12
US6328927B1 (en) * 1998-12-24 2001-12-11 Praxair Technology, Inc. Method of making high-density, high-purity tungsten sputter targets
JP3721014B2 (ja) 1999-09-28 2005-11-30 株式会社日鉱マテリアルズ スッパタリング用タングステンターゲットの製造方法
US7718117B2 (en) * 2000-09-07 2010-05-18 Kabushiki Kaisha Toshiba Tungsten sputtering target and method of manufacturing the target
JP2003055758A (ja) 2001-08-10 2003-02-26 Nikko Materials Co Ltd スッパタリング用タングステン焼結体ターゲット及びその製造方法
JP3998972B2 (ja) * 2001-12-27 2007-10-31 新日鉄マテリアルズ株式会社 スパッタリング用タングステンターゲットの製造方法
JP2005171389A (ja) * 2005-02-16 2005-06-30 Nikko Materials Co Ltd スパッタリング用タングステンターゲットの製造方法
CN101473054B (zh) * 2006-06-22 2012-07-04 H.C.施塔克有限公司 制备成型的耐火金属主体的方法
US8784729B2 (en) * 2007-01-16 2014-07-22 H.C. Starck Inc. High density refractory metals and alloys sputtering targets
US8197894B2 (en) * 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
JP4885065B2 (ja) 2007-06-11 2012-02-29 Ｊｘ日鉱日石金属株式会社 スッパタリング用タングステン焼結体ターゲットの製造方法
WO2009107763A1 (ja) * 2008-02-29 2009-09-03 新日鉄マテリアルズ株式会社 金属系スパッタリングターゲット材
WO2009147900A1 (ja) * 2008-06-02 2009-12-10 日鉱金属株式会社 タングステン焼結体スパッタリングターゲット
CN102277558B (zh) * 2011-08-23 2012-12-12 洛阳科威钨钼有限公司 一种钨旋转镀膜的溅射管靶的制作工艺
US10047433B2 (en) * 2012-03-02 2018-08-14 Jx Nippon Mining & Metals Corporation Tungsten sintered compact sputtering target and tungsten film formed using same target
CN103567443B (zh) * 2012-07-25 2015-10-07 宁波江丰电子材料股份有限公司 钨靶材的制作方法
US20150303040A1 (en) * 2012-11-02 2015-10-22 Jx Nippon Mining & Metals Corporation Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Said Target
WO2015146617A1 (ja) * 2014-03-26 2015-10-01 Jx日鉱日石金属株式会社 炭化タングステン又は炭化チタンからなるスパッタリングターゲット

Also Published As

Publication number Publication date
JP7174476B2 (ja) 2022-11-17
JP2018172716A (ja) 2018-11-08
EP3604612B1 (en) 2024-02-28
EP3604612A1 (en) 2020-02-05
WO2018179770A1 (ja) 2018-10-04
CN118222988A (zh) 2024-06-21
TWI663275B (zh) 2019-06-21
US20200016660A1 (en) 2020-01-16
EP3604612A4 (en) 2021-01-27
US11939647B2 (en) 2024-03-26
TW201837217A (zh) 2018-10-16
EP3604612C0 (en) 2024-02-28
CN110234790A (zh) 2019-09-13
KR20190120292A (ko) 2019-10-23

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