WO2015146617A1 - 炭化タングステン又は炭化チタンからなるスパッタリングターゲット - Google Patents
炭化タングステン又は炭化チタンからなるスパッタリングターゲット Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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Definitions
- the present invention relates to a sputtering target made of tungsten carbide or titanium carbide that has high workability and enables stable high-speed film formation.
- Sputtering that forms a coating of metal or ceramic material is used in many fields such as electronics, corrosion-resistant materials and decoration, catalysts, and production of cutting / abrasive and wear-resistant materials.
- the sputtering method itself is a well-known method in the above-mentioned field.
- a sputtering target that is particularly suitable for forming a film having a complicated shape or forming a circuit is required.
- Hard mask materials are the same as other general wiring materials, and the required characteristics are becoming stricter with each generation.
- tungsten carbide and titanium carbide are difficult to be densified due to their high melting points, and tungsten carbide (WC) and titanium carbide (TiC) used for carbide tools use about 5 to 25 wt% of cobalt (Co) as a binder material.
- WC tungsten carbide
- TiC titanium carbide
- Co cobalt
- Patent Document 3 discloses a sputtering target made of a sintered body mainly composed of SiC and a Ta compound.
- Patent Document 4 discloses a target material formed of a tantalum carbide sintered body.
- Patent Document 5 describes forming a TaCN barrier layer using TaC as a sputtering target.
- the present invention maintains high purity without adding other components to tungsten carbide or titanium carbide, and has high density, uniform in-plane hardness, high hardness, and stable high-speed film formation. It is an object of the present invention to provide a sputtering target made of tungsten carbide or titanium carbide that is capable of generating particles with little generation of particles.
- the present invention maintains high purity and high density, uniform and high hardness carbonization by mixing and sintering raw material powders having different particle size distributions. It was found that a sputtering target made of tungsten or titanium carbide could be obtained, and that a film with few particles could be formed stably at a high film formation rate.
- the present invention is based on this finding. 1) A tungsten carbide sputtering target having a purity of 4N or more and a density of 98% or more. 2) The tungsten carbide sputtering target according to 1) above, wherein the hardness is HRA90 or more and the variation in hardness is within ⁇ 5%.
- the present invention can provide a sputtering target having a high density, a uniform density and a high hardness while maintaining the purity of tungsten carbide or titanium carbide at a high level.
- the workability of the target made of tungsten carbide or titanium carbide is enhanced, and good surface properties can be obtained, so that the generation of particles can be suppressed.
- high-speed film formation is possible, it has an excellent effect from the viewpoint of improving productivity.
- the wiring width is extremely miniaturized, and tungsten carbide and titanium carbide are expected as a hard mask material for forming a complicated film structure.
- a hard mask material is formed using a sputtering target made of tungsten carbide or titanium carbide. Under these conditions, it is necessary to reduce impurities that affect semiconductor characteristics as well as high hardness and chemical resistance, and to obtain good sputtering characteristics. In addition, it is required to increase the density of the target (sintered body).
- tungsten carbide and titanium carbide have a high melting point, making it difficult to increase the density, and adding a binder or the like is not preferable from the viewpoint of impurities.
- the inventors of the present application have made it possible to perform fine packing by mixing two or more kinds of raw material powders (high purity products) having different average particle diameters. As a result of the sintering, it was found that both high purity and high density could be achieved simultaneously, which led to the present invention.
- the particle size distribution is a double-headed distribution as shown in FIG.
- adjustment of a particle size distribution can use well-known techniques, such as sieving, The method in particular is not restrict
- the present invention mixes two or more types of tungsten carbide or titanium carbide raw material powders having different average particle diameters, and produces a mixed powder in which the particle size distribution has a distribution of the number of mixed species.
- the mixed powder is sintered.
- the distribution having vertices corresponding to the number of mixed species means a double-headed distribution when two types are mixed, a distribution having three vertices when three types are mixed, and a particle size of each raw material powder is reflected. This also means that the particle size distribution of the raw material powder is narrow. This is because, if the particle size distribution is wide, the difference in the number of existence between the vicinity of the peak particle size and the surroundings is small, and therefore, when several particle size distributions are overlapped, the peak becomes unclear.
- the sputtering target of the present invention is made of tungsten carbide or titanium carbide, and has a purity of 4N or more and a density of 98% or more. Since the target of the present invention is used for forming a semiconductor element, it is necessary to reduce the impurity content as much as possible, and the purity is preferably 4N or more, more preferably 4N5 or more. In addition, the said purity is a purity except a gas component. Further, when the density of the target is low, the particle characteristics are deteriorated. Therefore, the density is preferably 98% or more, and more preferably 99% or more.
- the sputtering target of the present invention is characterized in that the hardness is HRA90 or more in the case of tungsten carbide, the hardness is HV2500 or more in the case of titanium carbide, and the hardness variation is within ⁇ 5%. .
- the tungsten carbide target having a hardness of less than HRA90 and a titanium carbide target having a hardness of less than HV2500 is not preferable because the final finish processing of the target does not provide good machinability and a desired finished shape. Further, if the hardness variation of the target is more than ⁇ 5%, the variation of the cutting resistance of the target is increased, the life of the cutting tool is shortened, and good and uniform surface properties cannot be obtained. Absent.
- the HRA is Rockwell hardness, and is expressed using A scale for a high hardness material such as tungsten carbide.
- a diamond cone having a tip radius of 0.2 mm and a tip angle of 120 degrees was used as an indenter, and a total load of 70 kg of a basic load of 10 kg and a test load of 60 kg was applied to the test surface to cause plastic deformation, and the load was returned to the reference load of 10 kg.
- the depth h (mm) of the permanent depression is measured. And it calculates
- requires from the calculation formula of Rockwell hardness: HRA 100-500h.
- the variation in hardness is defined as follows.
- Hardness variation (%) ⁇ (maximum value or minimum value / average value) ⁇ 1 ⁇ ⁇ 100
- the HV is Vickers hardness and can be applied to a high hardness material such as titanium carbide.
- the sputtering target of the present invention is further characterized in that the surface roughness Ra after machining is 1.0 ⁇ m or less, and further, the surface roughness Ra after polishing is 0.2 ⁇ m or less.
- the machining finish means a surface at the time of finishing with a grinding wheel using a surface grinder, and after polishing means a surface finish using abrasive grains. Such a surface property of the target can suppress the generation of particles and enables stable film formation.
- Example 1-1 As a raw material powder, a tungsten carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 and a median diameter of 4 ⁇ m shown in FIG. 2 was prepared. These powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The conditions for hot pressing were a vacuum atmosphere, a heating rate of 300 ° C./hour, a holding temperature of 1800 ° C., and a holding time of 2 hours. Allow to cool. A total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 99%, the hardness was HRA95, and the variation in hardness was within ⁇ 3%.
- the density is a total of nine locations in each of four directions for the center of the sintered body (disk shape) and the intermediate point (1 / 2R) and outer peripheral edge (R) on the radial line extending 90 degrees from the center.
- the sample of about 1 cm ⁇ 1 cm ⁇ 1 cm (thickness) was broken and collected by the Archimedes method.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness after each processing was measured with a stylus type surface roughness meter. As a result, the surface roughness Ra after machining was 0.32 ⁇ m, and the surface roughness Ra after polishing was 0.08 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 13. The results are shown in Table 1.
- Example 1-2 As a raw material powder, a tungsten carbide powder (purity 4N) having a median diameter of 2 ⁇ m and a median diameter of 4 ⁇ m shown in FIG. 2 was prepared. These powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 98.7%, the hardness was HRA93, and the variation in hardness was within ⁇ 3.3%. Hardness and density were measured by the same method as in Example 1.
- the other sintered body was machined and polished to be processed into a target. As a result of measuring the surface roughness after each processing by the same method as in Example 1, the surface roughness Ra after machining was 0.55 ⁇ m, and the surface roughness Ra after polishing was 0.12 ⁇ m. .
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 18. The results are shown in Table 1.
- Example 1-3 As a raw material powder, a tungsten carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 and a median diameter of 7 ⁇ m shown in FIG. 3 was prepared. These powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 98.3%, the hardness was HRA91, and the variation in hardness was within ⁇ 4.2%. Hardness and density were measured by the same method as in Example 1.
- the other sintered body was machined and polished to be processed into a target. As a result of measuring the surface roughness after each processing by the same method as in Example 1, the surface roughness Ra after machining was 0.86 ⁇ m, and the surface roughness Ra after polishing was 0.15 ⁇ m. .
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 19. The results are shown in Table 1.
- tungsten carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 is prepared. After this powder is replaced with argon by a ball mill, it is filled into a carbon mold and molded using a hot press device. Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 97.8%, the hardness was HRA95, and the variation in hardness was within ⁇ 6%. Hardness and density were measured by the same method as in Example 1. Next, the other sintered body was machined and polished to be processed into a target. As a result of measuring the surface roughness after each processing by the same method as in Example 1, the surface roughness Ra after machining was 0.86 ⁇ m, and the surface roughness Ra after polishing was 0.15 ⁇ m. .
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 25.
- Table 1 The results are shown in Table 1.
- tungsten carbide powder (purity 4N) having a median diameter of 4 ⁇ m shown in FIG. 2 is prepared. After this powder is replaced with argon by a ball mill, it is filled into a carbon mold and molded using a hot press device Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 97.5%, the hardness was HRA93, and the variation in hardness was within ⁇ 7%. Hardness and density were measured by the same method as in Example 1. Next, the other sintered body was machined and polished to be processed into a target. As a result of measuring the surface roughness after each processing in the same manner as in Example 1, the surface roughness Ra after machining was 0.98 ⁇ m, and the surface roughness Ra after polishing was 0.09 ⁇ m. .
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 58.
- Table 1 The results are shown in Table 1.
- tungsten carbide powder (purity 4N) having a median diameter of 7 ⁇ m shown in FIG. 3 is prepared. After this powder is replaced with argon by a ball mill, it is filled into a carbon mold and molded using a hot press device Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for hardness and density. As a result, the density was 97.2%, the hardness was HRA91, and the variation in hardness was within ⁇ 8%. Hardness and density were measured by the same method as in Example 1.
- the other sintered body was machined and polished to be processed into a target. As a result of measuring the surface roughness after each processing by the same method as in Example 1, the surface roughness Ra after machining was 1.25 ⁇ m, and the surface roughness Ra after polishing was 0.35 ⁇ m. .
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 134.
- Table 1 The results are shown in Table 1.
- Example 2-1 As a raw material powder, a titanium carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 and a median diameter of 4 ⁇ m shown in FIG. 2 was prepared. These powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The conditions for hot pressing were a vacuum atmosphere, a heating rate of 300 ° C./hour, a holding temperature of 1600 ° C., and a holding time of 2 hours. Pressurization was performed at 30 MPa from the start of heating to the end of holding. Allow to cool. A total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared.
- the produced sintered body was analyzed for density and hardness.
- the density was 99.2%
- the hardness was HV2920
- the variation in hardness was within ⁇ 3.3%.
- the density is a total of nine locations in each of four directions for the center of the sintered body (disk shape) and the intermediate point (1 / 2R) and outer peripheral edge (R) on the radial line extending 90 degrees from the center.
- the sample of about 1 cm ⁇ 1 cm ⁇ 1 cm (thickness) was broken and collected by the Archimedes method.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness after each processing was measured with a stylus type surface roughness meter. As a result, the surface roughness Ra after machining was 0.42 ⁇ m or less, and the surface roughness Ra after polishing was 0.09 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 18. The results are shown in Table 2.
- Example 2-2 As a raw material powder, a titanium carbide powder (purity 4N) having a median diameter of 2 ⁇ m and a median diameter of 4 ⁇ m shown in FIG. 2 was prepared, and these powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared. Next, the density and hardness were analyzed about the produced sintered compact. The analysis method was the same as in Example 1. As a result, the density was 98.6%, the hardness was HV2840, and the variation in hardness was within ⁇ 3.8%.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness Ra after machining was 0.58 ⁇ m or less, and the surface roughness Ra after polishing was 0.12 ⁇ m. It was.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds. The number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 19.
- Example 2-3 As a raw material powder, a titanium carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 and a median diameter of 7 ⁇ m shown in FIG. 3 was prepared. These powders were substituted with argon by a ball mill and mixed for 30 minutes. Then, the taken out mixed powder was filled in a carbon mold, and molded and sintered using a hot press apparatus. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared. Next, the density and hardness were analyzed about the produced sintered compact. The analysis method was the same as in Example 1. As a result, the density was 98.1%, the hardness was HV2530, and the variation in hardness was within ⁇ 4.8%.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness Ra after machining was 0.76 ⁇ m
- the surface roughness Ra after polishing was 0.16 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 24.
- a titanium carbide powder (purity 4N) having a median diameter of 1 ⁇ m shown in FIG. 1 is prepared. After this powder is replaced with argon by a ball mill, it is filled into a carbon mold and molded using a hot press device. Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared. Next, the density and hardness were analyzed about the produced sintered compact. The analysis method was the same as in Example 1. As a result, the density was 97.5%, the hardness was HV2850, and the variation in hardness was within ⁇ 7.3%.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness Ra after machining was 0.77 ⁇ m
- the surface roughness Ra after polishing was 0.17 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. At this time, the number of particles was 35.
- a titanium carbide powder having a median diameter of 4 ⁇ m (purity: 4N) shown in FIG. 2 is prepared. After this powder is replaced with argon by a ball mill, it is filled in a carbon mold and molded using a hot press device. Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared. Next, the density and hardness were analyzed about the produced sintered compact. The analysis method was the same as in Example 1. As a result, the density was 97.3%, the hardness was HV2480, and the variation in hardness was within ⁇ 9.5%.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness Ra after machining was 0.99 ⁇ m
- the surface roughness Ra after polishing was 0.10 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 59.
- a titanium carbide powder (purity: 4N) having a median diameter of 7 ⁇ m shown in FIG. 3 is prepared. Sintered. The hot pressing conditions were the same as in Example 1. Further, a total of two sintered bodies, one for measuring physical properties and one for sputtering, were prepared. Next, the density and hardness were analyzed about the produced sintered compact. The analysis method was the same as in Example 1. As a result, the density was 95.2%, the hardness was HV2350, and the variation in hardness was within ⁇ 10.2%.
- the other sintered body was machined and polished to be processed into a target.
- the surface roughness Ra after machining was 1.15 ⁇ m
- the surface roughness Ra after polishing was 0.36 ⁇ m.
- This target was attached to a magnetron sputtering apparatus (C-3010 sputtering system manufactured by Canon Anelva), sputtered at an input power of 500 W, and deposited on a 4-inch diameter silicon substrate for 20 seconds.
- the number of particles adhering to the substrate was measured with a particle counter. The number of particles at this time was 214.
- the present invention can provide a sputtering target made of tungsten carbide or titanium carbide having a high density, a uniform and high hardness while maintaining the purity of tungsten carbide or titanium carbide at a high purity. Thereby, since the workability of the target is improved and a good surface property is obtained, the excellent effect that generation of particles can be suppressed is obtained.
- INDUSTRIAL APPLICABILITY The present invention is useful as a target suitable for the field of electronics, particularly for forming a hard mask used for forming a film having a complicated shape or forming a circuit.
Abstract
Description
本発明は、この知見に基づいて、
1)純度が4N以上であり、密度が98%以上であることを特徴とする炭化タングステンスパッタリングターゲット。
2)硬さがHRA90以上であり、硬さのばらつきが±5%以内であることを特徴とする上記1)記載の炭化タングステンスパッタリングターゲット。
3)機械加工仕上がりの表面粗さRaが1.0μm以下であることを特徴とする上記1)又は2)記載の炭化タングステンスパッタリングターゲット。
4)研磨加工後の表面粗さRaが0.2μm以下であることを特徴とする上記1)~3)のいずれか一に記載の炭化タングステンスパッタリングターゲット。
5)平均粒径が異なる2種以上の炭化タングステン原料粉末を混合して、粒度分布が混合種数分の頂点をもつ分布となる混合粉末を作製し、該混合粉末を焼結することを特徴とする炭化タングステンスパッタリングターゲットの製造方法。
6)純度が4N以上であり、密度が98%以上であることを特徴とする炭化チタンスパッタリングターゲット。
7)硬さがHV2500以上であり、硬さのばらつきが±5%以内であることを特徴とする上記6)記載の炭化チタンスパッタリングターゲット。
8)機械加工仕上がりの表面粗さRaが1.0μm以下であることを特徴とする上記6)又は7)記載の炭化チタンスパッタリングターゲット。
9)研磨加工後の表面粗さRaが0.2μm以下であることを特徴とする上記6)~8)のいずれか一に記載の炭化チタンスパッタリングターゲット。
10)平均粒径が異なる2種以上の炭化チタン原料粉末を混合して、粒度分布が混合種数分の頂点をもつ分布となる混合粉末を作製し、該混合粉末を焼結することを特徴とする炭化チタンスパッタリングターゲットの製造方法。
本発明のスパッタリングターゲットは、炭化タングステン又は炭化チタンからなり、純度が4N以上、密度が98%以上であることを特徴とする。本発明のターゲットは半導体素子の形成に用いられるため、不純物含有量を極力低減する必要があり、純度は4N以上、さらには純度4N5以上とするのが好ましい。なお、前記純度は、ガス成分を除く純度である。また、ターゲットの密度が低い場合には、パーティクル特性を悪化させることから、密度は98%以上、さらには99%以上とするのが好ましい。
また、本発明において、硬さのばらつきは、以下のように定義される。
焼結体(円盤状)の中心と、中心から90度四方に伸ばした半径線上の中間点(1/2R)及び外周端(R)の内側10mmの位置について、それぞれ4方向ずつ合計9か所の位置において、硬さ測定試験を行い、9点の平均値から次式を用いて算出する。
硬さのばらつき(%)={(最大値あるいは最小値/平均値)-1}×100
(実施例1-1)
原料粉末として、図1に示すメジアン径1μmと図2に示すメジアン径4μmの炭化タングステン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、真空雰囲気、昇温速度300℃/時間、保持温度1800℃、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧し、保持終了後はチャンバー内でそのまま自然冷却させた。なお、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、メジアン径2μmと図2に示すメジアン径4μmの炭化タングステン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、図1に示すメジアン径1μmと図3に示すメジアン径7μmの炭化タングステン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、図1に示すメジアン径1μmの炭化タングステン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、図2に示すメジアン径4μmの炭化タングステン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、図3に示すメジアン径7μmの炭化タングステン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
(実施例2-1)
原料粉末として、図1に示すメジアン径1μmと図2に示すメジアン径4μmの炭化チタン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、真空雰囲気、昇温速度300℃/時間、保持温度1600℃、保持時間2時間とし、昇温開始時から保持終了まで30MPaで加圧し、保持終了後はチャンバー内でそのまま自然冷却させた。なお、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
原料粉末として、メジアン径2μmと図2に示すメジアン径4μmの炭化チタン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。次に、作製した焼結体について、密度、硬さについて分析を行った。分析方法は実施例1と同様とした。その結果、密度は98.6%であり、硬さはHV2840、硬さのばらつきは±3.8%以内であった。
原料粉末として、図1に示すメジアン径1μmと図3に示すメジアン径7μmの炭化チタン粉末(純度4N)を用意し、これらの粉末をボールミルでアルゴン置換し30分混合した。そして、取り出した混合粉末をカーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。次に、作製した焼結体について、密度、硬さについて分析を行った。分析方法は実施例1と同様とした。その結果、密度は98.1%であり、硬さはHV2530、硬さのばらつきは±4.8%以内であった。
原料粉末として、図1に示すメジアン径1μmの炭化チタン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
次に、作製した焼結体について、密度、硬さについて分析を行った。分析方法は実施例1と同様とした。その結果、密度は97.5%であり、硬さはHV2850、硬さのばらつきは±7.3%以内であった。
原料粉末として、図2に示すメジアン径4μmの炭化チタン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。次に、作製した焼結体について、密度、硬さについて分析を行った。分析方法は実施例1と同様とした。その結果、密度は97.3%であり、硬さはHV2480、硬さのばらつきは±9.5%以内であった。
原料粉末として、図3に示すメジアン径7μmの炭化チタン粉末(純度4N)を用意し、この粉末をボールミルでアルゴン置換した後、カーボン製の型に充填して、ホットプレス装置を用いて成形・焼結させた。ホットプレスの条件は、実施例1と同様とした。また、焼結体は、物性測定用とスパッタリング用それぞれ1枚の合計2枚を準備した。
次に、作製した焼結体について、密度、硬さについて分析を行った。分析方法は実施例1と同様とした。その結果、密度は95.2%であり、硬さはHV2350、硬さのばらつきは±10.2%以内であった。
Claims (10)
- 純度が4N以上であり、密度が98%以上であることを特徴とする炭化タングステンスパッタリングターゲット。
- 硬さがHRA90以上であり、硬さのばらつきが±5%以内であることを特徴とする請求項1記載の炭化タングステンスパッタリングターゲット。
- 機械加工仕上がりの表面粗さRaが1.0μm以下であることを特徴とする請求項1又は2記載の炭化タングステンスパッタリングターゲット。
- 研磨加工後の表面粗さRaが0.2μm以下であることを特徴とする請求項1~3のいずれか一項に記載の炭化タングステンスパッタリングターゲット。
- 平均粒径が異なる2種以上の炭化タングステン原料粉末を混合して、粒度分布が混合種数分の頂点をもつ分布となる混合粉末を作製し、該混合粉末を焼結することを特徴とする炭化タングステンスパッタリングターゲットの製造方法。
- 純度が4N以上であり、密度が98%以上であることを特徴とする炭化チタンスパッタリングターゲット。
- 硬さがHV2500以上であり、硬さのばらつきが±5%以内であることを特徴とする請求項6記載の炭化チタンスパッタリングターゲット。
- 機械加工仕上がりの表面粗さRaが1.0μm以下であることを特徴とする請求項6又は7記載の炭化チタンスパッタリングターゲット。
- 研磨加工後の表面粗さRaが0.2μm以下であることを特徴とする請求項6~8のいずれか一項に記載の炭化チタンスパッタリングターゲット。
- 平均粒径が異なる2種以上の炭化チタン原料粉末を混合して、粒度分布が混合種数分の頂点をもつ分布となる混合粉末を作製し、該混合粉末を焼結することを特徴とする炭化チタンスパッタリングターゲットの製造方法。
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US15/110,974 US20160333460A1 (en) | 2014-03-26 | 2015-03-13 | Sputtering target comprising tungsten carbide or titanium carbide |
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CN108103460B (zh) * | 2017-11-24 | 2019-11-29 | 北京安泰六九新材料科技有限公司 | 一种碳化钛靶材及其制备方法 |
CN111893447B (zh) * | 2020-07-10 | 2022-04-19 | 厦门虹鹭钨钼工业有限公司 | 一种掺杂亚微米金刚石碳化钨溅射靶材及其制备方法 |
CN113773084B (zh) * | 2021-09-08 | 2023-06-23 | 宁波江丰电子材料股份有限公司 | 一种用于装饰镀膜的碳化钨靶材及其制备方法 |
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Also Published As
Publication number | Publication date |
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EP3054029A4 (en) | 2017-11-08 |
KR20160084434A (ko) | 2016-07-13 |
US20160333460A1 (en) | 2016-11-17 |
JPWO2015146617A1 (ja) | 2017-04-13 |
TW201602052A (zh) | 2016-01-16 |
JP6117425B2 (ja) | 2017-04-19 |
EP3054029B1 (en) | 2018-08-15 |
TWI671276B (zh) | 2019-09-11 |
EP3054029A1 (en) | 2016-08-10 |
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