SG11201908105VA - Mask blank, transfer mask, and method of manufacturing semiconductor device - Google Patents
Mask blank, transfer mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201908105VA SG11201908105VA SG11201908105VA SG11201908105VA SG 11201908105V A SG11201908105V A SG 11201908105VA SG 11201908105V A SG11201908105V A SG 11201908105VA SG 11201908105V A SG11201908105V A SG 11201908105VA
- Authority
- SG
- Singapore
- Prior art keywords
- light shielding
- shielding film
- mask
- mask blank
- arf exposure
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000008033 biological extinction Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017051032A JP6400763B2 (ja) | 2017-03-16 | 2017-03-16 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
| PCT/JP2018/007475 WO2018168464A1 (ja) | 2017-03-16 | 2018-02-28 | マスクブランク、転写用マスクおよび半導体デバイスの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201908105VA true SG11201908105VA (en) | 2019-10-30 |
Family
ID=63523769
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201908105V SG11201908105VA (en) | 2017-03-16 | 2018-02-28 | Mask blank, transfer mask, and method of manufacturing semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US11314162B2 (ko) |
| JP (1) | JP6400763B2 (ko) |
| KR (2) | KR102587661B1 (ko) |
| CN (2) | CN115933308A (ko) |
| SG (1) | SG11201908105VA (ko) |
| TW (2) | TWI789999B (ko) |
| WO (1) | WO2018168464A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7231094B2 (ja) * | 2018-12-12 | 2023-03-01 | 信越化学工業株式会社 | フォトマスクブランク、及びフォトマスクの製造方法 |
| JP7346527B2 (ja) * | 2021-11-25 | 2023-09-19 | Hoya株式会社 | マスクブランク、転写用マスク、マスクブランクの製造方法、転写用マスクの製造方法、及び表示装置の製造方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07159981A (ja) | 1993-12-03 | 1995-06-23 | Toshiba Corp | 露光用マスク基板 |
| US5629115A (en) | 1993-04-30 | 1997-05-13 | Kabushiki Kaisha Toshiba | Exposure mask and method and apparatus for manufacturing the same |
| KR20100009558A (ko) * | 2007-04-27 | 2010-01-27 | 호야 가부시키가이샤 | 포토마스크 블랭크 및 포토마스크 |
| KR101681338B1 (ko) * | 2008-10-29 | 2016-11-30 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크 및 그 제조 방법 |
| JP2010217514A (ja) | 2009-03-17 | 2010-09-30 | Toppan Printing Co Ltd | フォトマスクの製造方法 |
| JP5606028B2 (ja) * | 2009-09-11 | 2014-10-15 | Ｈｏｙａ株式会社 | フォトマスクブランクおよびフォトマスクの製造方法 |
| JP5154626B2 (ja) * | 2010-09-30 | 2013-02-27 | Ｈｏｙａ株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、および半導体デバイスの製造方法 |
| JP5653888B2 (ja) * | 2010-12-17 | 2015-01-14 | Hoya株式会社 | マスクブランク、転写用マスク、転写用マスクの製造方法、及び半導体デバイスの製造方法 |
| JP5596111B2 (ja) * | 2012-12-05 | 2014-09-24 | Ｈｏｙａ株式会社 | 半導体デバイスの製造方法 |
| KR102166222B1 (ko) * | 2013-01-15 | 2020-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 위상 시프트 마스크 및 이들의 제조 방법 |
| JP6005530B2 (ja) * | 2013-01-15 | 2016-10-12 | Hoya株式会社 | マスクブランク、位相シフトマスクおよびこれらの製造方法 |
| JP2014191176A (ja) * | 2013-03-27 | 2014-10-06 | Dainippon Printing Co Ltd | フォトマスクブランクス、フォトマスク及びその製造方法 |
| TWI594066B (zh) * | 2014-03-18 | 2017-08-01 | Hoya Corp | A mask substrate, a phase shift mask and a method of manufacturing the semiconductor device |
| JP6430155B2 (ja) * | 2014-06-19 | 2018-11-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6153894B2 (ja) * | 2014-07-11 | 2017-06-28 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| JP6394496B2 (ja) * | 2014-07-15 | 2018-09-26 | 信越化学工業株式会社 | バイナリフォトマスクブランク、その製造方法、及びバイナリフォトマスクの製造方法 |
| JP6502143B2 (ja) * | 2015-03-27 | 2019-04-17 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6087401B2 (ja) * | 2015-08-14 | 2017-03-01 | Hoya株式会社 | マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法 |
| JP6573806B2 (ja) * | 2015-08-31 | 2019-09-11 | Hoya株式会社 | マスクブランク、位相シフトマスク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
| JP6266842B2 (ja) * | 2015-08-31 | 2018-01-24 | Hoya株式会社 | マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法 |
| TWI684822B (zh) * | 2015-09-30 | 2020-02-11 | 日商Ｈｏｙａ股份有限公司 | 空白遮罩、相位移轉遮罩及半導體元件之製造方法 |
| JP6302520B2 (ja) * | 2016-09-07 | 2018-03-28 | Hoya株式会社 | マスクブランク、位相シフトマスクの製造方法および半導体デバイスの製造方法 |
-
2017
- 2017-03-16 JP JP2017051032A patent/JP6400763B2/ja active Active
-
2018
- 2018-02-28 CN CN202310002958.3A patent/CN115933308A/zh active Pending
- 2018-02-28 KR KR1020197025767A patent/KR102587661B1/ko active IP Right Grant
- 2018-02-28 US US16/492,904 patent/US11314162B2/en active Active
- 2018-02-28 WO PCT/JP2018/007475 patent/WO2018168464A1/ja active Application Filing
- 2018-02-28 KR KR1020237034056A patent/KR102609398B1/ko active IP Right Grant
- 2018-02-28 SG SG11201908105V patent/SG11201908105VA/en unknown
- 2018-02-28 CN CN201880016943.XA patent/CN110603489B/zh active Active
- 2018-03-07 TW TW110142937A patent/TWI789999B/zh active
- 2018-03-07 TW TW107107564A patent/TWI750341B/zh active
-
2022
- 2022-03-18 US US17/698,151 patent/US11624979B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| TW202210934A (zh) | 2022-03-16 |
| CN110603489A (zh) | 2019-12-20 |
| KR102609398B1 (ko) | 2023-12-05 |
| TW201901288A (zh) | 2019-01-01 |
| TWI750341B (zh) | 2021-12-21 |
| US20220206381A1 (en) | 2022-06-30 |
| TWI789999B (zh) | 2023-01-11 |
| JP2018155838A (ja) | 2018-10-04 |
| KR20230144128A (ko) | 2023-10-13 |
| JP6400763B2 (ja) | 2018-10-03 |
| US20210141305A1 (en) | 2021-05-13 |
| US11624979B2 (en) | 2023-04-11 |
| CN115933308A (zh) | 2023-04-07 |
| CN110603489B (zh) | 2023-02-03 |
| US11314162B2 (en) | 2022-04-26 |
| WO2018168464A1 (ja) | 2018-09-20 |
| KR102587661B1 (ko) | 2023-10-12 |
| KR20190122694A (ko) | 2019-10-30 |
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