SG11201906425RA - System and method for measuring substrate and film thickness distribution - Google Patents
System and method for measuring substrate and film thickness distributionInfo
- Publication number
- SG11201906425RA SG11201906425RA SG11201906425RA SG11201906425RA SG11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA SG 11201906425R A SG11201906425R A SG 11201906425RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- international
- mass sensor
- mass
- thickness distribution
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
- G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02001—Interferometers characterised by controlling or generating intrinsic radiation properties
- G01B9/02007—Two or more frequencies or sources used for interferometric measurement
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/02015—Interferometers characterised by the beam path configuration
- G01B9/02017—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations
- G01B9/02021—Interferometers characterised by the beam path configuration with multiple interactions between the target object and light beams, e.g. beam reflections occurring from different locations contacting different faces of object, e.g. opposite faces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
- G01B2290/70—Using polarization in the interferometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Signal Processing (AREA)
- Instruments For Measurement Of Length By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762456651P | 2017-02-08 | 2017-02-08 | |
US15/622,629 US10236222B2 (en) | 2017-02-08 | 2017-06-14 | System and method for measuring substrate and film thickness distribution |
PCT/US2018/017255 WO2018148303A1 (en) | 2017-02-08 | 2018-02-07 | System and method for measuring substrate and film thickness distribution |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201906425RA true SG11201906425RA (en) | 2019-08-27 |
Family
ID=63037971
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201906425RA SG11201906425RA (en) | 2017-02-08 | 2018-02-07 | System and method for measuring substrate and film thickness distribution |
Country Status (7)
Country | Link |
---|---|
US (1) | US10236222B2 (ja) |
EP (1) | EP3551964A4 (ja) |
JP (1) | JP7114630B2 (ja) |
KR (1) | KR102518197B1 (ja) |
CN (2) | CN110312911B (ja) |
SG (1) | SG11201906425RA (ja) |
WO (1) | WO2018148303A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
US10989652B2 (en) * | 2017-09-06 | 2021-04-27 | Lam Research Corporation | Systems and methods for combining optical metrology with mass metrology |
JP6959191B2 (ja) * | 2018-07-25 | 2021-11-02 | 旭化成エレクトロニクス株式会社 | 学習処理装置、学習処理方法、化合物半導体の製造方法、および、プログラム |
US20220120559A1 (en) * | 2019-12-26 | 2022-04-21 | Nanjing LiAn Semiconductor Limited | Measuring apparatus and method of wafer geometry |
EP3996130B1 (de) * | 2020-11-09 | 2023-03-08 | Siltronic AG | Verfahren zum abscheiden einer epitaktischen schicht auf einer substratscheibe |
CN113203357B (zh) * | 2021-04-09 | 2022-08-09 | 中国科学院上海光学精密机械研究所 | 一种双侧斐索干涉仪检测装置 |
US20230169643A1 (en) * | 2021-11-30 | 2023-06-01 | Applied Materials, Inc. | Monitoring of deposited or etched film thickness using image-based mass distribution metrology |
KR20230136489A (ko) * | 2022-03-18 | 2023-09-26 | 덕우전자주식회사 | 이차전지 벤트캡의 노치두께 측정장치 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
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US5416594A (en) | 1993-07-20 | 1995-05-16 | Tencor Instruments | Surface scanner with thin film gauge |
US5625170A (en) | 1994-01-18 | 1997-04-29 | Nanometrics Incorporated | Precision weighing to monitor the thickness and uniformity of deposited or etched thin film |
DE19602445A1 (de) | 1996-01-24 | 1997-07-31 | Nanopro Luftlager Produktions | Vorrichtung und Verfahren zum Vermessen von zwei einander gegenüberliegenden Oberflächen eines Körpers |
US6950193B1 (en) * | 1997-10-28 | 2005-09-27 | Rockwell Automation Technologies, Inc. | System for monitoring substrate conditions |
WO1999054924A1 (fr) | 1998-04-21 | 1999-10-28 | Hitachi, Ltd. | Dispositif et procede permettant de mesurer l'epaisseur d'un film mince, et procede et dispositif de production d'un film mince utilisant les premiers |
US6038028A (en) | 1998-08-26 | 2000-03-14 | Lockheed Martin Energy Research Corp. | High-speed non-contact measuring apparatus for gauging the thickness of moving sheet material |
US6284986B1 (en) * | 1999-03-15 | 2001-09-04 | Seh America, Inc. | Method of determining the thickness of a layer on a silicon substrate |
US6249351B1 (en) * | 1999-06-03 | 2001-06-19 | Zygo Corporation | Grazing incidence interferometer and method |
US7057741B1 (en) | 1999-06-18 | 2006-06-06 | Kla-Tencor Corporation | Reduced coherence symmetric grazing incidence differential interferometer |
GB0016562D0 (en) | 2000-07-05 | 2000-08-23 | Metryx Limited | Apparatus and method for investigating semiconductor wafers |
US6563578B2 (en) | 2001-04-02 | 2003-05-13 | Advanced Micro Devices, Inc. | In-situ thickness measurement for use in semiconductor processing |
US6513451B2 (en) * | 2001-04-20 | 2003-02-04 | Eastman Kodak Company | Controlling the thickness of an organic layer in an organic light-emiting device |
US6790376B1 (en) * | 2001-07-23 | 2004-09-14 | Advanced Micro Devices, Inc. | Process control based upon weight or mass measurements, and systems for accomplishing same |
JP4100663B2 (ja) * | 2002-03-15 | 2008-06-11 | フジノン株式会社 | 絶対厚み測定装置 |
US7130039B2 (en) | 2002-04-18 | 2006-10-31 | Kla-Tencor Technologies Corporation | Simultaneous multi-spot inspection and imaging |
US6847458B2 (en) * | 2003-03-20 | 2005-01-25 | Phase Shift Technology, Inc. | Method and apparatus for measuring the shape and thickness variation of polished opaque plates |
US7268887B2 (en) * | 2004-12-23 | 2007-09-11 | Corning Incorporated | Overlapping common-path interferometers for two-sided measurement |
US7578301B2 (en) | 2005-03-28 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for determining the endpoint of a cleaning or conditioning process in a plasma processing system |
US20070148792A1 (en) | 2005-12-27 | 2007-06-28 | Marx David S | Wafer measurement system and apparatus |
KR101321861B1 (ko) * | 2005-11-15 | 2013-10-25 | 지고 코포레이션 | 광학적으로 분석되지 않은 표면 형상의 특징을 측정하는방법 및 간섭계 |
JP4729423B2 (ja) * | 2006-03-28 | 2011-07-20 | 株式会社ミツトヨ | 光学干渉計 |
JP4861281B2 (ja) * | 2007-09-26 | 2012-01-25 | 株式会社神戸製鋼所 | ヘテロダイン干渉測定方法,ヘテロダイン干渉装置,厚み測定装置,厚み測定方法 |
JP2009115503A (ja) * | 2007-11-02 | 2009-05-28 | Lasertec Corp | 粗さ測定方法及び粗さ測定装置 |
GB0804499D0 (en) | 2008-03-11 | 2008-04-16 | Metryx Ltd | Measurement apparatus and method |
US7847954B2 (en) * | 2008-05-15 | 2010-12-07 | Kla-Tencor Corporation | Measuring the shape and thickness variation of a wafer with high slopes |
JP2010060385A (ja) * | 2008-09-02 | 2010-03-18 | Shibaura Mechatronics Corp | 液膜厚の測定装置及び測定方法 |
JP5198418B2 (ja) * | 2009-01-28 | 2013-05-15 | 株式会社神戸製鋼所 | 形状測定装置,形状測定方法 |
US8068234B2 (en) | 2009-02-18 | 2011-11-29 | Kla-Tencor Corporation | Method and apparatus for measuring shape or thickness information of a substrate |
JP5681453B2 (ja) * | 2010-11-08 | 2015-03-11 | 株式会社ディスコ | 測定方法および測定装置 |
US9714825B2 (en) | 2011-04-08 | 2017-07-25 | Rudolph Technologies, Inc. | Wafer shape thickness and trench measurement |
US20150176973A1 (en) * | 2011-12-09 | 2015-06-25 | Kla-Tencor Corporation | A dual interferometer system with a short reference flat distance for wafer shape and thickness variation measurement |
US20140293291A1 (en) | 2013-04-01 | 2014-10-02 | Kla-Tencor Corporation | Wafer Shape and Thickness Measurement System Utilizing Shearing Interferometers |
ITBO20130403A1 (it) | 2013-07-26 | 2015-01-27 | Marposs Spa | Metodo e apparecchiatura per il controllo ottico mediante interferometria dello spessore di un oggetto in lavorazione |
WO2015171752A1 (en) * | 2014-05-06 | 2015-11-12 | Applejack 199 L.P. | Stress analysis of semiconductor wafers |
US9651359B2 (en) * | 2014-11-21 | 2017-05-16 | Kla-Tencor Corporation | Dual wavelength dual interferometer with combiner-splitter |
US10024654B2 (en) * | 2015-04-06 | 2018-07-17 | Kla-Tencor Corporation | Method and system for determining in-plane distortions in a substrate |
US10236222B2 (en) * | 2017-02-08 | 2019-03-19 | Kla-Tencor Corporation | System and method for measuring substrate and film thickness distribution |
-
2017
- 2017-06-14 US US15/622,629 patent/US10236222B2/en active Active
-
2018
- 2018-02-07 SG SG11201906425RA patent/SG11201906425RA/en unknown
- 2018-02-07 CN CN201880009926.3A patent/CN110312911B/zh active Active
- 2018-02-07 WO PCT/US2018/017255 patent/WO2018148303A1/en unknown
- 2018-02-07 JP JP2019563345A patent/JP7114630B2/ja active Active
- 2018-02-07 CN CN202111121743.0A patent/CN113847892A/zh active Pending
- 2018-02-07 EP EP18750708.2A patent/EP3551964A4/en active Pending
- 2018-02-07 KR KR1020197026144A patent/KR102518197B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
WO2018148303A1 (en) | 2018-08-16 |
JP7114630B2 (ja) | 2022-08-08 |
JP2020506558A (ja) | 2020-02-27 |
US20180226304A1 (en) | 2018-08-09 |
CN110312911A (zh) | 2019-10-08 |
CN113847892A (zh) | 2021-12-28 |
KR102518197B1 (ko) | 2023-04-04 |
EP3551964A1 (en) | 2019-10-16 |
US10236222B2 (en) | 2019-03-19 |
CN110312911B (zh) | 2021-10-15 |
KR20190107171A (ko) | 2019-09-18 |
EP3551964A4 (en) | 2020-05-27 |
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