SG11201903365SA - Elastic wave device with sub-wavelength thick piezoelectric layer - Google Patents

Elastic wave device with sub-wavelength thick piezoelectric layer

Info

Publication number
SG11201903365SA
SG11201903365SA SG11201903365SA SG11201903365SA SG11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA SG 11201903365S A SG11201903365S A SG 11201903365SA
Authority
SG
Singapore
Prior art keywords
elastic wave
international
layer
osaka
sub
Prior art date
Application number
SG11201903365SA
Other languages
English (en)
Inventor
Rei Goto
Jie Zou
Hiroyuki Nakamura
Chun Lam
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Publication of SG11201903365SA publication Critical patent/SG11201903365SA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/40Piezoelectric or electrostrictive devices with electrical input and electrical output, e.g. functioning as transformers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02007Details of bulk acoustic wave devices
    • H03H9/02015Characteristics of piezoelectric layers, e.g. cutting angles
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02559Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02543Characteristics of substrate, e.g. cutting angles
    • H03H9/02574Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/02535Details of surface acoustic wave devices
    • H03H9/02818Means for compensation or elimination of undesirable effects
    • H03H9/02834Means for compensation or elimination of undesirable effects of temperature influence
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25Constructional features of resonators using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6423Means for obtaining a particular transfer characteristic
    • H03H9/6433Coupled resonator filters
    • H03H9/6483Ladder SAW filters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • H03H9/6489Compensation of undesirable effects
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72Networks using surface acoustic waves
    • H03H9/725Duplexers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/50Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8542Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877Conductive materials

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
SG11201903365SA 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer SG11201903365SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662410804P 2016-10-20 2016-10-20
US201662423705P 2016-11-17 2016-11-17
PCT/US2017/057256 WO2018075682A1 (fr) 2016-10-20 2017-10-18 Dispositif à ondes élastiques à couche piézoélectrique épaisse de sous-longueur d'onde

Publications (1)

Publication Number Publication Date
SG11201903365SA true SG11201903365SA (en) 2019-05-30

Family

ID=62019519

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903365SA SG11201903365SA (en) 2016-10-20 2017-10-18 Elastic wave device with sub-wavelength thick piezoelectric layer

Country Status (9)

Country Link
US (3) US10778181B2 (fr)
JP (1) JP2018074575A (fr)
KR (1) KR20190058680A (fr)
CN (1) CN109891612A (fr)
DE (1) DE112017005316B4 (fr)
GB (2) GB2569082A (fr)
SG (1) SG11201903365SA (fr)
TW (1) TWI752102B (fr)
WO (1) WO2018075682A1 (fr)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015137089A1 (fr) * 2014-03-14 2015-09-17 株式会社村田製作所 Dispositif à ondes acoustiques
DE112016001482T5 (de) * 2015-04-01 2017-12-28 Murata Manufacturing Co., Ltd. Duplexer
SG11201903365SA (en) 2016-10-20 2019-05-30 Skyworks Solutions Inc Elastic wave device with sub-wavelength thick piezoelectric layer
KR102280381B1 (ko) * 2016-12-20 2021-07-22 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
US10594292B2 (en) * 2017-01-30 2020-03-17 Huawei Technologies Co., Ltd. Surface acoustic wave device
JP7042796B2 (ja) * 2017-03-09 2022-03-28 株式会社村田製作所 弾性波装置、弾性波装置パッケージ及びマルチプレクサ
WO2018198952A1 (fr) * 2017-04-24 2018-11-01 株式会社村田製作所 Dispositif de filtre et son procédé de fabrication
US11070193B2 (en) * 2017-11-24 2021-07-20 Murata Manufacturing Co., Ltd. Elastic wave device, radio-frequency front-end circuit, and communication device
JP7068835B2 (ja) 2018-01-26 2022-05-17 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
WO2019172032A1 (fr) * 2018-03-08 2019-09-12 株式会社村田製作所 Multiplexeur, circuit frontal à haute fréquence et dispositif de communication
CN108418566A (zh) * 2018-03-16 2018-08-17 无锡市好达电子有限公司 一种声表面波滤波器
SG10201902753RA (en) 2018-04-12 2019-11-28 Skyworks Solutions Inc Filter Including Two Types Of Acoustic Wave Resonators
JP2019201345A (ja) * 2018-05-17 2019-11-21 太陽誘電株式会社 弾性波共振器、フィルタおよびマルチプレクサ
US11595019B2 (en) 2018-04-20 2023-02-28 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, and multiplexer
SG10201905013VA (en) * 2018-06-11 2020-01-30 Skyworks Solutions Inc Acoustic wave device with spinel layer
US20200119710A1 (en) * 2018-10-16 2020-04-16 Tohoku University Acoustic wave devices
JP7014308B2 (ja) * 2018-11-20 2022-02-01 株式会社村田製作所 エクストラクタ
DE102018132862A1 (de) * 2018-12-19 2020-06-25 RF360 Europe GmbH Akustischer Oberflächenwellenresonator und Multiplexer, der diesen umfasst
CN110113025B (zh) * 2019-04-28 2021-05-18 清华大学 一种便于射频前端集成的温度补偿声表面波器件及其制备方法与应用
US11664780B2 (en) 2019-05-14 2023-05-30 Skyworks Solutions, Inc. Rayleigh mode surface acoustic wave resonator
TWI748497B (zh) * 2019-06-12 2021-12-01 美商特拉華公司 電極界定未懸掛之聲波共振器
CN110138356B (zh) * 2019-06-28 2020-11-06 中国科学院上海微系统与信息技术研究所 一种高频声表面波谐振器及其制备方法
DE102019119239A1 (de) * 2019-07-16 2021-01-21 RF360 Europe GmbH Multiplexer
WO2021060521A1 (fr) * 2019-09-27 2021-04-01 株式会社村田製作所 Dispositif à ondes élastiques
WO2021060523A1 (fr) * 2019-09-27 2021-04-01 株式会社村田製作所 Dispositif à ondes élastiques et dispositif de filtre
CN114467255A (zh) * 2019-09-27 2022-05-10 株式会社村田制作所 弹性波装置
CN110708035B (zh) * 2019-10-21 2022-04-01 中国电子科技集团公司第二十六研究所 温度补偿型声表面波器件的温补层上表层表面波抑制方法
JP7433873B2 (ja) 2019-12-06 2024-02-20 太陽誘電株式会社 弾性波共振器、フィルタ、及びマルチプレクサ
CN115349225A (zh) * 2020-03-30 2022-11-15 株式会社村田制作所 弹性波装置
CN112054777A (zh) * 2020-05-09 2020-12-08 诺思(天津)微系统有限责任公司 体声波谐振器组件及制造方法、滤波器及电子设备
WO2022019170A1 (fr) * 2020-07-22 2022-01-27 株式会社村田製作所 Dispositif à ondes élastiques
GB2598165B (en) * 2020-08-18 2022-08-24 River Eletec Corp Acoustic wave device
US11522516B2 (en) 2020-08-27 2022-12-06 RF360 Europe GmbH Thin-film surface-acoustic-wave filter using lithium niobate
CN111988013B (zh) * 2020-08-31 2021-06-01 诺思(天津)微系统有限责任公司 温补滤波器优化方法和温补滤波器、多工器、通信设备
CN112217490B (zh) * 2020-10-22 2021-09-14 展讯通信(上海)有限公司 层状温补型声表面波谐振器与封装方法
CN112287584A (zh) * 2020-10-30 2021-01-29 西北工业大学 一种超薄平板波导设备及其设计方法
CN112600529A (zh) * 2020-12-18 2021-04-02 广东广纳芯科技有限公司 一种具有poi结构的兰姆波谐振器
US20220337224A1 (en) * 2021-04-16 2022-10-20 Resonant Inc. Filter for 5 ghz wi-fi using transversely-excited film bulk acoustic resonators
CN113114159B (zh) * 2021-05-27 2021-12-10 北京超材信息科技有限公司 声表面波装置
WO2023248636A1 (fr) * 2022-06-24 2023-12-28 株式会社村田製作所 Dispositif à ondes acoustiques
CN116094481B (zh) * 2023-04-12 2023-07-28 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置
CN116633307A (zh) * 2023-05-23 2023-08-22 无锡市好达电子股份有限公司 弹性波装置
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480209A (en) * 1981-10-09 1984-10-30 Clarion Co., Ltd. Surface acoustic wave device having a specified crystalline orientation
JP3880150B2 (ja) * 1997-06-02 2007-02-14 松下電器産業株式会社 弾性表面波素子
JP3945363B2 (ja) * 2001-10-12 2007-07-18 株式会社村田製作所 弾性表面波装置
US6661313B2 (en) 2001-10-25 2003-12-09 Sawtek, Inc. Surface acoustic wave devices using optimized cuts of lithium niobate (LiNbO3)
US7105980B2 (en) 2002-07-03 2006-09-12 Sawtek, Inc. Saw filter device and method employing normal temperature bonding for producing desirable filter production and performance characteristics
JP4345329B2 (ja) * 2003-03-13 2009-10-14 セイコーエプソン株式会社 弾性表面波デバイス
JP4407696B2 (ja) * 2004-03-12 2010-02-03 株式会社村田製作所 弾性表面波装置
JP2006279609A (ja) 2005-03-29 2006-10-12 Fujitsu Media Device Kk 弾性境界波素子、共振子およびラダー型フィルタ
US7446453B1 (en) 2006-07-05 2008-11-04 Triquint, Inc. Surface acoustic wave devices using surface acoustic waves with strong piezoelectric coupling
US8084915B2 (en) * 2006-11-08 2011-12-27 Panasonic Corporation Surface acoustic wave resonator having comb electrodes with different overlapping lengths
US7965155B2 (en) * 2006-12-27 2011-06-21 Panasonic Corporation Surface acoustic wave resonator, and surface acoustic wave filter and antenna duplexer in which the surface acoustic wave resonator is used
JP5154285B2 (ja) 2007-05-28 2013-02-27 和彦 山之内 弾性境界波機能素子
KR101196990B1 (ko) 2007-12-25 2012-11-05 가부시키가이샤 무라타 세이사쿠쇼 복합 압전 기판의 제조방법
WO2010004741A1 (fr) * 2008-07-11 2010-01-14 パナソニック株式会社 Elément d’onde de lamb et équipement électronique utilisant ce dernier
US8035464B1 (en) 2009-03-05 2011-10-11 Triquint Semiconductor, Inc. Bonded wafer SAW filters and methods
KR20110020741A (ko) 2009-08-24 2011-03-03 엔지케이 인슐레이터 엘티디 복합 기판의 제조 방법
EP2490333B1 (fr) * 2009-10-13 2019-09-04 Murata Manufacturing Co., Ltd. Dispositif à onde de surface élastique
JP5338914B2 (ja) 2009-11-02 2013-11-13 パナソニック株式会社 弾性波素子と、これを用いたデュプレクサおよび電子機器
CN104935288B (zh) 2010-02-22 2018-08-03 天工滤波方案日本有限公司 天线共用器
DE102010034121A1 (de) 2010-08-12 2012-02-16 Epcos Ag Mit akustischen Wellen arbeitendes Bauelement mit reduziertem Temperaturgang der Frequenzlage und Verfahren zur Herstellung
JP5601377B2 (ja) 2010-11-30 2014-10-08 株式会社村田製作所 弾性波装置及びその製造方法
KR101534654B1 (ko) * 2010-12-24 2015-07-07 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 그 제조 방법
CN103314529A (zh) * 2011-01-24 2013-09-18 埃普科斯股份有限公司 表面声波滤波器
US8610518B1 (en) * 2011-05-18 2013-12-17 Triquint Semiconductor, Inc. Elastic guided wave coupling resonator filter and associated manufacturing
CN104702239B (zh) * 2011-06-23 2017-09-22 天工滤波方案日本有限公司 梯型弹性波滤波器及使用该弹性波滤波器的天线双工器
WO2013047433A1 (fr) 2011-09-30 2013-04-04 株式会社村田製作所 Dispositif à ondes élastiques
CN103891139B (zh) * 2011-10-24 2016-08-24 株式会社村田制作所 弹性表面波装置
WO2013141168A1 (fr) * 2012-03-23 2013-09-26 株式会社村田製作所 Dispositif d'onde élastique et procédé pour le fabriquer
WO2013191122A1 (fr) 2012-06-22 2013-12-27 株式会社村田製作所 Dispositif à onde élastique
US9246533B2 (en) 2012-10-18 2016-01-26 Skyworks Panasonic Filter Solutions Japan Co., Ltd. Electronic device including filter
FR2998420B1 (fr) 2012-11-22 2017-06-09 Centre Nat De La Rech Scient (C N R S) Transducteur a ondes elastiques de surface se propageant sur un substrat en niobate de lithium ou en tantalate de lithium.
JP6103906B2 (ja) 2012-12-06 2017-03-29 スカイワークスフィルターソリューションズジャパン株式会社 弾性波装置と封止体
JP6134550B2 (ja) 2013-03-22 2017-05-24 スカイワークスフィルターソリューションズジャパン株式会社 弾性波装置およびそれを用いたアンテナ共用器
US9219517B2 (en) * 2013-10-02 2015-12-22 Triquint Semiconductor, Inc. Temperature compensated bulk acoustic wave devices using over-moded acoustic reflector layers
JP2015073207A (ja) 2013-10-03 2015-04-16 スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 弾性波共振器
WO2015080045A1 (fr) 2013-11-29 2015-06-04 株式会社村田製作所 Diviseur
JP6288110B2 (ja) * 2013-12-27 2018-03-07 株式会社村田製作所 弾性波装置
WO2016084526A1 (fr) 2014-11-28 2016-06-02 株式会社村田製作所 Dispositif à ondes élastiques
US10355668B2 (en) * 2015-01-20 2019-07-16 Taiyo Yuden Co., Ltd. Acoustic wave device
US10128814B2 (en) 2016-01-28 2018-11-13 Qorvo Us, Inc. Guided surface acoustic wave device providing spurious mode rejection
SG11201903365SA (en) 2016-10-20 2019-05-30 Skyworks Solutions Inc Elastic wave device with sub-wavelength thick piezoelectric layer
CN109964408B (zh) * 2016-11-18 2023-10-27 株式会社村田制作所 声表面波滤波器以及多工器
US20190074819A1 (en) * 2017-08-18 2019-03-07 Skyworks Solutions, Inc. Filter with surface acoustic wave device for carrier aggregation system
CN111434037B (zh) * 2017-12-08 2023-09-08 株式会社村田制作所 弹性波装置
JP7264229B2 (ja) * 2019-03-11 2023-04-25 株式会社村田製作所 弾性波装置
WO2020209190A1 (fr) * 2019-04-08 2020-10-15 株式会社村田製作所 Dispositif à ondes élastiques et multiplexeur
US11811392B2 (en) * 2019-10-23 2023-11-07 Skyworks Solutions, Inc. Surface acoustic wave resonator with suppressed transverse modes using selective dielectric removal
US11870421B2 (en) * 2019-10-23 2024-01-09 Skyworks Solutions, Inc. Surface acoustic wave resonator with suppressed transverse modes using second bus bar
US20230028925A1 (en) * 2021-07-23 2023-01-26 Skyworks Solutions, Inc. Multilayer piezoelectric substrate device with reduced piezoelectric material cut angle

Also Published As

Publication number Publication date
GB202118878D0 (en) 2022-02-09
JP2018074575A (ja) 2018-05-10
DE112017005316B4 (de) 2021-08-05
GB201905101D0 (en) 2019-05-22
US20180159494A1 (en) 2018-06-07
GB2569082A (en) 2019-06-05
US10778181B2 (en) 2020-09-15
US20180159507A1 (en) 2018-06-07
TWI752102B (zh) 2022-01-11
TW201830740A (zh) 2018-08-16
US20210050840A1 (en) 2021-02-18
DE112017005316T5 (de) 2019-07-18
US11996821B2 (en) 2024-05-28
KR20190058680A (ko) 2019-05-29
WO2018075682A1 (fr) 2018-04-26
GB2600838A (en) 2022-05-11
CN109891612A (zh) 2019-06-14

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