SG11201901464WA - Particle coating by atomic layer depostion (ald) - Google Patents

Particle coating by atomic layer depostion (ald)

Info

Publication number
SG11201901464WA
SG11201901464WA SG11201901464WA SG11201901464WA SG11201901464WA SG 11201901464W A SG11201901464W A SG 11201901464WA SG 11201901464W A SG11201901464W A SG 11201901464WA SG 11201901464W A SG11201901464W A SG 11201901464WA SG 11201901464W A SG11201901464W A SG 11201901464WA
Authority
SG
Singapore
Prior art keywords
international
ald
atomic layer
pct
reaction chamber
Prior art date
Application number
SG11201901464WA
Other languages
English (en)
Inventor
Marko Pudas
Original Assignee
Picosun Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Picosun Oy filed Critical Picosun Oy
Publication of SG11201901464WA publication Critical patent/SG11201901464WA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4415—Acoustic wave CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45555—Atomic layer deposition [ALD] applied in non-semiconductor technology
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical Vapour Deposition (AREA)
  • Management, Administration, Business Operations System, And Electronic Commerce (AREA)
  • Prostheses (AREA)
SG11201901464WA 2016-09-16 2016-09-16 Particle coating by atomic layer depostion (ald) SG11201901464WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/FI2016/050645 WO2018050954A1 (fr) 2016-09-16 2016-09-16 Revêtement de particules par dépôt de couches atomiques (ald)

Publications (1)

Publication Number Publication Date
SG11201901464WA true SG11201901464WA (en) 2019-03-28

Family

ID=61619360

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901464WA SG11201901464WA (en) 2016-09-16 2016-09-16 Particle coating by atomic layer depostion (ald)

Country Status (9)

Country Link
US (1) US11261526B2 (fr)
EP (1) EP3512979A4 (fr)
JP (2) JP2019530798A (fr)
KR (2) KR20190052074A (fr)
CN (1) CN109689929B (fr)
RU (1) RU2728343C1 (fr)
SG (1) SG11201901464WA (fr)
TW (1) TWI753003B (fr)
WO (1) WO2018050954A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11242599B2 (en) * 2018-07-19 2022-02-08 Applied Materials, Inc. Particle coating methods and apparatus
TWI684665B (zh) * 2018-12-28 2020-02-11 安強股份有限公司 成膜設備及成膜方法
FI129040B (fi) * 2019-06-06 2021-05-31 Picosun Oy Fluidia läpäisevien materiaalien päällystäminen
JP7488071B2 (ja) * 2020-03-12 2024-05-21 株式会社神戸製鋼所 粉体成膜装置および粉体成膜方法
CN112626495B (zh) * 2020-11-16 2022-06-10 鑫天虹(厦门)科技有限公司 可吹动粉末的原子层沉积装置
KR20230158654A (ko) 2021-03-22 2023-11-21 메르츠+벤틀리 아게 원자층 증착에 의한 입자 코팅

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JPS5740586A (en) * 1980-08-22 1982-03-06 Toshiba Corp Treatment of fluorescent substance and its device
JPH02115565U (fr) * 1989-02-28 1990-09-17
JP2592396B2 (ja) * 1993-07-09 1997-03-19 コーア株式会社 薄膜の形成装置
JP3409408B2 (ja) * 1993-12-27 2003-05-26 日新電機株式会社 イオン注入装置
US6159853A (en) 1999-08-04 2000-12-12 Industrial Technology Research Institute Method for using ultrasound for assisting forming conductive layers on semiconductor devices
DE10001620A1 (de) 2000-01-17 2001-07-19 Abb Alstom Power Ch Ag Beschichtungsverfahren
US7306823B2 (en) * 2004-09-18 2007-12-11 Nanosolar, Inc. Coated nanoparticles and quantum dots for solution-based fabrication of photovoltaic cells
EP1771598B1 (fr) 2004-06-28 2009-09-30 Cambridge Nanotech Inc. Procedes et systemes par depot en couche atomique
US20070298250A1 (en) 2006-06-22 2007-12-27 Weimer Alan W Methods for producing coated phosphor and host material particles using atomic layer deposition methods
JP5161450B2 (ja) 2005-09-30 2013-03-13 財団法人高知県産業振興センター プラズマｃｖｄ装置及びプラズマ表面処理方法
US8993051B2 (en) 2007-12-12 2015-03-31 Technische Universiteit Delft Method for covering particles, especially a battery electrode material particles, and particles obtained with such method and a battery comprising such particle
WO2009098784A1 (fr) * 2008-02-06 2009-08-13 Youtec Co., Ltd. Appareil de dépôt chimique en phase vapeur assisté par plasma, procédé de dépôt chimique en phase vapeur assisté par plasma, et dispositif d'agitation
EP2159304A1 (fr) 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Procédé et appareil pour le dépôt de couches atomiques
NL2002590C2 (en) 2009-03-04 2010-09-07 Univ Delft Technology Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
EP2625308A4 (fr) * 2010-10-07 2016-10-19 Rokstar Technologies Llc Systèmes de réacteur à combustible fluidisé mécaniquement et procédés convenant à la production de silicium
WO2013171360A1 (fr) 2012-05-14 2013-11-21 Picosun Oy Enrobage de particules d'une poudre à l'aide d'une cartouche de dépôt de couches atomiques
US8871153B2 (en) 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
SG11201505260TA (en) 2013-01-23 2015-08-28 Picosun Oy Method and apparatus for ald processing particulate material
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KR101541361B1 (ko) * 2013-07-15 2015-08-03 광주과학기술원 나노코팅 입자 제조를 위한 유동층 원자층 증착 장치
JP6287654B2 (ja) * 2014-07-14 2018-03-07 住友金属鉱山株式会社 紫外線遮蔽性粉末の製造方法

Also Published As

Publication number Publication date
CN109689929A (zh) 2019-04-26
EP3512979A1 (fr) 2019-07-24
WO2018050954A1 (fr) 2018-03-22
JP2022095904A (ja) 2022-06-28
KR20190052074A (ko) 2019-05-15
RU2728343C1 (ru) 2020-07-29
CN109689929B (zh) 2022-09-30
TW201819674A (zh) 2018-06-01
US20190249302A1 (en) 2019-08-15
KR20230117636A (ko) 2023-08-08
TWI753003B (zh) 2022-01-21
EP3512979A4 (fr) 2020-05-20
US11261526B2 (en) 2022-03-01
JP2019530798A (ja) 2019-10-24

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