SG11201905739QA - Physical vapor deposition processing systems target cooling - Google Patents

Physical vapor deposition processing systems target cooling

Info

Publication number
SG11201905739QA
SG11201905739QA SG11201905739QA SG11201905739QA SG11201905739QA SG 11201905739Q A SG11201905739Q A SG 11201905739QA SG 11201905739Q A SG11201905739Q A SG 11201905739QA SG 11201905739Q A SG11201905739Q A SG 11201905739QA SG 11201905739Q A SG11201905739Q A SG 11201905739QA
Authority
SG
Singapore
Prior art keywords
international
vapor deposition
physical vapor
california
pct
Prior art date
Application number
SG11201905739QA
Inventor
Wei W Wang
Kartik Shah
Vishwas Kumar Pandey
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11201905739QA publication Critical patent/SG11201905739QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Prostheses (AREA)
  • Lubricants (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 26 July 2018 (26.07.2018) WIP0 I PCT omit VIII °nolo imo Him Imo oimIE (10) International Publication Number WO 2018/136395 Al (22) International Filing Date: 16 January 2018 (16.01.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/411,579 20 January 2017 (20.01.2017) US (71) Applicant: APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue, Santa Clara, California 95054 (US). (72) Inventors: WANG, Wei W.; 2201 Monroe Street, #804, Santa Clara, California 95050 (US). SHAH, Kartik; 18908 Bellgrove Circle, Saratoga, California 95070 (US). PANDEY, Vishwas Kumar; A-25/2 Shiv Krupa, Ved na- gar, Ujjain 456 010, Madhya Pradesh (IN). (74) Agent: SERVILLA, Scott, S.; Servilla Whitney LLC, 33 Wood Avenue South, Suite 830, Iselin, New Jersey 08830 (US). Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (51) International Patent Classification: C23C 14/34 (2006.01) H01.137/34 (2006.01) (21) International Application Number: PCT/US2018/013802 (81) (54) Title: PHYSICAL VAPOR DEPOSITION PROCESSING SYSTEMS TARGET COOLING 390 392 fdP ) 361 370 II II II / ~360 FIG. 5 7 W 1 I I MI 111 396 396 ``-314 1-1 313 00 (57) : Physical vapor deposition target assemblies and methods of cooling physical vapor deposition targets are disclosed. 0 An exemplary target assembly comprises a flow pattern including a plurality of rows and bends fluidly connected to an inlet end and \" an outlet end. C [Continued on next page] 380 369 WO 2018/136395 Al MIDEDIMOMONIIMEIDIMIllOilOillOCIMMOVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h))
SG11201905739QA 2017-01-20 2018-01-16 Physical vapor deposition processing systems target cooling SG11201905739QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/411,579 US10325763B2 (en) 2017-01-20 2017-01-20 Physical vapor deposition processing systems target cooling
PCT/US2018/013802 WO2018136395A1 (en) 2017-01-20 2018-01-16 Physical vapor deposition processing systems target cooling

Publications (1)

Publication Number Publication Date
SG11201905739QA true SG11201905739QA (en) 2019-08-27

Family

ID=62907072

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201905739QA SG11201905739QA (en) 2017-01-20 2018-01-16 Physical vapor deposition processing systems target cooling

Country Status (7)

Country Link
US (1) US10325763B2 (en)
JP (2) JP7134175B2 (en)
KR (1) KR102575574B1 (en)
CN (1) CN110382733B (en)
SG (1) SG11201905739QA (en)
TW (1) TWI748037B (en)
WO (1) WO2018136395A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020522130A (en) 2017-05-31 2020-07-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Method for word line isolation in 3D-NAND devices
US10950498B2 (en) 2017-05-31 2021-03-16 Applied Materials, Inc. Selective and self-limiting tungsten etch process
US10685821B2 (en) 2017-08-18 2020-06-16 Applied Materials, Inc. Physical vapor deposition processing systems target cooling
TWI788618B (en) * 2019-01-25 2023-01-01 美商應用材料股份有限公司 Physical vapor deposition target assembly
CN114514336B (en) * 2019-09-27 2024-03-26 慧理示先进技术公司 Substrate fixing device for scintillator deposition, substrate deposition device including the same, and scintillator deposition method using the same
US11754691B2 (en) * 2019-09-27 2023-09-12 Taiwan Semiconductor Manufacturing Company Ltd. Target measurement device and method for measuring a target
KR102442377B1 (en) * 2019-09-27 2022-09-13 주식회사 뷰웍스 A substrate fixing device for scintilator deposition, a substrate deposition device containing the same and a scintillator deposition method using the same
TW202122909A (en) * 2019-10-25 2021-06-16 美商應用材料股份有限公司 Extreme ultraviolet mask blank defect reduction methods
US20230120662A1 (en) * 2020-02-11 2023-04-20 Lam Research Corporation Cooling plate for semiconductor processing chamber window
CN112011769A (en) * 2020-08-06 2020-12-01 深圳市金耀玻璃机械有限公司 End capable of completely exhausting air in target tube
JP7223738B2 (en) * 2020-11-12 2023-02-16 株式会社アルバック Sputtering equipment

Family Cites Families (16)

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US3649512A (en) * 1970-06-25 1972-03-14 Varian Associates Large area sputtering target electrode structure
JPS5956738U (en) * 1982-10-05 1984-04-13 富士通株式会社 Target for sputtering
DE3613018A1 (en) * 1986-04-17 1987-10-22 Santos Pereira Ribeiro Car Dos MAGNETRON SPRAYING CATHODE
DE4105786A1 (en) * 1991-02-23 1992-08-27 Abb Patent Gmbh Liquid cooled electrical resistance - has track formed on housing that is box shaped and has liquid circulated through it
KR100291330B1 (en) 1998-07-02 2001-07-12 윤종용 Sputtering equipment for semiconductor device manufacturing and sputtering method using the same
JP2000219963A (en) * 1999-01-29 2000-08-08 Vacuum Metallurgical Co Ltd Backing plate for sputtering device
JP4744704B2 (en) * 2000-03-16 2011-08-10 株式会社東芝 Method for manufacturing wear-resistant member
KR20030064398A (en) 2000-09-11 2003-07-31 토소우 에스엠디, 인크 Method of manufacturing sputter targets with internal cooling channels
JP2002220661A (en) * 2001-01-29 2002-08-09 Sharp Corp Backing plate used in sputtering apparatus, and sputtering method
US7691240B2 (en) 2005-05-02 2010-04-06 Honeywell International Inc. Target assemblies, targets, backing plates, and methods of target cooling
US20070045108A1 (en) 2005-08-26 2007-03-01 Demaray Richard E Monolithic sputter target backing plate with integrated cooling passages
US7815782B2 (en) * 2006-06-23 2010-10-19 Applied Materials, Inc. PVD target
CN101104921A (en) * 2006-07-14 2008-01-16 应用材料股份有限公司 Cooled anodes
JP5057904B2 (en) 2007-09-07 2012-10-24 株式会社日本セラテック Temperature control plate and manufacturing method thereof
WO2014008304A2 (en) * 2012-07-02 2014-01-09 Oracle International Corporation Extensibility for sales predictor (spe)
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems

Also Published As

Publication number Publication date
US20180211826A1 (en) 2018-07-26
JP7480233B2 (en) 2024-05-09
US10325763B2 (en) 2019-06-18
TW201831716A (en) 2018-09-01
KR20190100977A (en) 2019-08-29
JP2022180387A (en) 2022-12-06
WO2018136395A1 (en) 2018-07-26
CN110382733B (en) 2022-03-01
CN110382733A (en) 2019-10-25
TWI748037B (en) 2021-12-01
JP2020504244A (en) 2020-02-06
JP7134175B2 (en) 2022-09-09
KR102575574B1 (en) 2023-09-05

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