SG11201900509YA - Simultaneous capturing of overlay signals from multiple targets - Google Patents

Simultaneous capturing of overlay signals from multiple targets

Info

Publication number
SG11201900509YA
SG11201900509YA SG11201900509YA SG11201900509YA SG11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA SG 11201900509Y A SG11201900509Y A SG 11201900509YA
Authority
SG
Singapore
Prior art keywords
international
multiple targets
pct
field plane
metrology
Prior art date
Application number
SG11201900509YA
Other languages
English (en)
Inventor
Andy Hill (Andrew)
Amnon Manassen
Yuri Paskover
Yuval Lubashevsky
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201900509YA publication Critical patent/SG11201900509YA/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
SG11201900509YA 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets SG11201900509YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets
PCT/US2017/044528 WO2018023078A1 (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets

Publications (1)

Publication Number Publication Date
SG11201900509YA true SG11201900509YA (en) 2019-02-27

Family

ID=61009490

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201900509YA SG11201900509YA (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets
SG10201912512UA SG10201912512UA (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10201912512UA SG10201912512UA (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets

Country Status (7)

Country Link
US (2) US10048132B2 (enExample)
JP (1) JP6771647B2 (enExample)
KR (1) KR102180433B1 (enExample)
CN (2) CN112432926B (enExample)
SG (2) SG11201900509YA (enExample)
TW (1) TWI728157B (enExample)
WO (1) WO2018023078A1 (enExample)

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EP3575875A1 (en) * 2018-05-31 2019-12-04 ASML Netherlands B.V. Measurement apparatus and method of measuring a target
CN112567296B (zh) * 2018-08-28 2024-03-08 科磊股份有限公司 使用二衍射级成像的离轴照明覆盖测量
EP3853666B1 (en) * 2018-09-19 2022-08-10 ASML Netherlands B.V. Metrology sensor for position metrology
US11119417B2 (en) * 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11073768B2 (en) 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
US20230064193A1 (en) * 2020-01-29 2023-03-02 Asml Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11966171B2 (en) 2020-08-17 2024-04-23 Tokyo Electron Limited Method for producing overlay results with absolute reference for semiconductor manufacturing
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
CN118159913A (zh) * 2021-10-29 2024-06-07 Asml荷兰有限公司 检查装置、可旋转保偏射束移位器和方法
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
KR20250040583A (ko) * 2022-07-19 2025-03-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 시스템을 위한 향상된 정렬 장치
WO2024033035A1 (en) * 2022-08-10 2024-02-15 Asml Netherlands B.V. Metrology method and associated metrology device
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

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Also Published As

Publication number Publication date
CN112432926A (zh) 2021-03-02
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
CN109564160B (zh) 2020-11-10
US20180031424A1 (en) 2018-02-01
KR102180433B1 (ko) 2020-11-19
KR20190026039A (ko) 2019-03-12
SG10201912512UA (en) 2020-02-27
US20180335346A1 (en) 2018-11-22
JP2019526053A (ja) 2019-09-12
US10048132B2 (en) 2018-08-14
CN109564160A (zh) 2019-04-02
JP6771647B2 (ja) 2020-10-21
CN112432926B (zh) 2025-10-10
US10401228B2 (en) 2019-09-03
TWI728157B (zh) 2021-05-21

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