SG11201900803YA - Surface defect inspection with large particle monitoring and laser power control - Google Patents
Surface defect inspection with large particle monitoring and laser power controlInfo
- Publication number
- SG11201900803YA SG11201900803YA SG11201900803YA SG11201900803YA SG11201900803YA SG 11201900803Y A SG11201900803Y A SG 11201900803YA SG 11201900803Y A SG11201900803Y A SG 11201900803YA SG 11201900803Y A SG11201900803Y A SG 11201900803YA SG 11201900803Y A SG11201900803Y A SG 11201900803YA
- Authority
- SG
- Singapore
- Prior art keywords
- california
- measurement spot
- international
- san jose
- leading
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
WO 18/0 27 0 10 Al 133 WAFER POSITIONING SYSTEM 125 FIG. 1 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 February 2018 (08.02.2018) WIP0 I PCT omit VIII °nolo omoiolomollm m1111E11 oimIE (10) International Publication Number WO 2018/027010 Al (51) International Patent Classification: HOlL 21/66 (2006.01) HOlL 21/67 (2006.01) (21) International Application Number: PCT/US2017/045261 (22) International Filing Date: 03 August 2017 (03.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/230,330 05 August 2016 (05.08.2016) US (71) Applicant: KLA-TENCOR CORPORATION [US/US]; Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (72) Inventors: CUI, Steve Yifeng; 5415 Ontario Common, Fremont, California 94555 (US). HUANG, Jay (Chun- sheng); 6951 Grandwood Way, San Jose, California 95120 (US). WANG, Chunhai; 5026 Blackbird Way, Pleasanton, California 94566 (US). WOLTERS, Chris- tian; 5073 Shady Avenue, San Jose, California 95129 (US). WHITESIDE, Bret; 680 Epic Way #241, San Jose, California 95134 (US). ROMANOVSKY, Anatoly; 1044 Amarillo Avenue, Palo Alto, California 94303 (US). HUANG, Chuanyong; 9000 Hostetter Road, San Jose, Cal- ifornia 95132 (US). PETTIBONE, Donald; 4805 McCoy Avenue, San Jose, California 95130 (US). (74) Agent: MCANDREWS, Kevin et al.; KLA-Tencor Corp., Legal Department, One Technology Drive, Milpitas, Cali- fornia 95035 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, (54) Title: SURFACE DEFECT INSPECTION WITH LARGE PARTICLE MONITORING AND LASER POWER CONTROL (57) : Methods and systems for reducing illumination in- tensity while scanning over large particles are presented herein. A surface inspection system determines the presence of a large parti- cle in the inspection path of a primary measurement spot using a separate leading measurement spot. The inspection system reduces the incident illumination power while the large particle is within the primary measurement spot. The primary measurement spot and the leading measurement spot are separately imaged by a common imaging collection objective onto one or more detectors. The imag- ing based collection design spatially separates the image of the lead- ing measurement spot from the image of the primary measurement spot at one or more wafer image planes. Light detected from the leading measurement spot is analyzed to determine a reduced pow- er time interval when the optical power of the primary illumination beam and the leading illumination beam are reduced. [Continued on next page] WO 2018/027010 Al MIDEDIMOMOIDEIREIDIDOMMEIROMIONVOIS TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3))
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/230,330 US10324045B2 (en) | 2016-08-05 | 2016-08-05 | Surface defect inspection with large particle monitoring and laser power control |
PCT/US2017/045261 WO2018027010A1 (en) | 2016-08-05 | 2017-08-03 | Surface defect inspection with large particle monitoring and laser power control |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201900803YA true SG11201900803YA (en) | 2019-02-27 |
Family
ID=61069145
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201900803YA SG11201900803YA (en) | 2016-08-05 | 2017-08-03 | Surface defect inspection with large particle monitoring and laser power control |
Country Status (8)
Country | Link |
---|---|
US (1) | US10324045B2 (en) |
JP (1) | JP6840224B2 (en) |
KR (1) | KR102228505B1 (en) |
CN (1) | CN109564884B (en) |
IL (1) | IL264450B (en) |
SG (1) | SG11201900803YA (en) |
TW (1) | TWI733873B (en) |
WO (1) | WO2018027010A1 (en) |
Families Citing this family (10)
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US10438339B1 (en) * | 2016-09-12 | 2019-10-08 | Apple Inc. | Optical verification system and methods of verifying micro device transfer |
WO2019159334A1 (en) | 2018-02-16 | 2019-08-22 | 株式会社日立ハイテクノロジーズ | Defect inspection device |
WO2020190641A1 (en) | 2019-03-21 | 2020-09-24 | Becton, Dickinson And Company | Light detection systems and methods of use thereof |
US11374375B2 (en) | 2019-08-14 | 2022-06-28 | Kla Corporation | Laser closed power loop with an acousto-optic modulator for power modulation |
CN112540082A (en) * | 2019-09-20 | 2021-03-23 | 深圳中科飞测科技股份有限公司 | Detection system and detection method |
US11094501B2 (en) * | 2019-11-19 | 2021-08-17 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Secondary charged particle imaging system |
EP3923078A1 (en) * | 2020-06-10 | 2021-12-15 | ASML Netherlands B.V. | Heigth measurement method and height measurement system |
US20220091047A1 (en) * | 2020-09-24 | 2022-03-24 | Kla Corporation | Large-Particle Monitoring with Laser Power Control for Defect Inspection |
TWI814412B (en) * | 2022-05-31 | 2023-09-01 | 合盈光電科技股份有限公司 | Multi-directional inspection system for mura detection and the method thereof |
CN118483249A (en) * | 2024-05-07 | 2024-08-13 | 无锡卓海科技股份有限公司 | Wafer detection device and detection method |
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US6271916B1 (en) | 1994-03-24 | 2001-08-07 | Kla-Tencor Corporation | Process and assembly for non-destructive surface inspections |
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US6608676B1 (en) | 1997-08-01 | 2003-08-19 | Kla-Tencor Corporation | System for detecting anomalies and/or features of a surface |
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US5898492A (en) * | 1997-09-25 | 1999-04-27 | International Business Machines Corporation | Surface inspection tool using reflected and scattered light |
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TW444247B (en) | 1999-01-29 | 2001-07-01 | Toshiba Corp | Laser beam irradiating device, manufacture of non-single crystal semiconductor film, and manufacture of liquid crystal display device |
JP3652912B2 (en) | 1999-03-08 | 2005-05-25 | 日本電子株式会社 | Defect inspection equipment |
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JP4641143B2 (en) | 2003-06-30 | 2011-03-02 | 株式会社トプコン | Surface inspection device |
JP4567984B2 (en) | 2004-01-30 | 2010-10-27 | 株式会社 日立ディスプレイズ | Flat panel display manufacturing equipment |
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WO2016121756A1 (en) * | 2015-01-30 | 2016-08-04 | 株式会社日立ハイテクノロジーズ | Examination device |
US9696568B2 (en) * | 2015-05-13 | 2017-07-04 | Lasertec Corporation | Light source apparatus and inspection apparatus |
-
2016
- 2016-08-05 US US15/230,330 patent/US10324045B2/en active Active
-
2017
- 2017-08-03 JP JP2019506157A patent/JP6840224B2/en active Active
- 2017-08-03 KR KR1020197006370A patent/KR102228505B1/en active IP Right Grant
- 2017-08-03 WO PCT/US2017/045261 patent/WO2018027010A1/en active Application Filing
- 2017-08-03 CN CN201780049354.7A patent/CN109564884B/en active Active
- 2017-08-03 SG SG11201900803YA patent/SG11201900803YA/en unknown
- 2017-08-04 TW TW106126378A patent/TWI733873B/en active
-
2019
- 2019-01-24 IL IL264450A patent/IL264450B/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN109564884B (en) | 2020-08-18 |
JP2019525180A (en) | 2019-09-05 |
IL264450B (en) | 2021-09-30 |
CN109564884A (en) | 2019-04-02 |
US10324045B2 (en) | 2019-06-18 |
JP6840224B2 (en) | 2021-03-10 |
TW201807765A (en) | 2018-03-01 |
WO2018027010A1 (en) | 2018-02-08 |
IL264450A (en) | 2019-02-28 |
US20180038803A1 (en) | 2018-02-08 |
TWI733873B (en) | 2021-07-21 |
KR20190027390A (en) | 2019-03-14 |
KR102228505B1 (en) | 2021-03-15 |
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