CN112432926B - 同时捕捉来自多个目标的重叠信号 - Google Patents

同时捕捉来自多个目标的重叠信号

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Publication number
CN112432926B
CN112432926B CN202011221908.7A CN202011221908A CN112432926B CN 112432926 B CN112432926 B CN 112432926B CN 202011221908 A CN202011221908 A CN 202011221908A CN 112432926 B CN112432926 B CN 112432926B
Authority
CN
China
Prior art keywords
illumination
pupil plane
pupil
metrology
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202011221908.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN112432926A (zh
Inventor
安迪（安德鲁）·希尔
阿姆农·玛纳森
尤里·帕斯卡维尔
尤瓦尔·卢巴舍夫斯基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Publication of CN112432926A publication Critical patent/CN112432926A/zh
Application granted granted Critical
Publication of CN112432926B publication Critical patent/CN112432926B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Immunology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
CN202011221908.7A 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号 Active CN112432926B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets
US15/222,503 2016-07-28
PCT/US2017/044528 WO2018023078A1 (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets
CN201780046742.XA CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201780046742.XA Division CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Publications (2)

Publication Number Publication Date
CN112432926A CN112432926A (zh) 2021-03-02
CN112432926B true CN112432926B (zh) 2025-10-10

Family

ID=61009490

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202011221908.7A Active CN112432926B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号
CN201780046742.XA Active CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201780046742.XA Active CN109564160B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Country Status (7)

Country Link
US (2) US10048132B2 (enExample)
JP (1) JP6771647B2 (enExample)
KR (1) KR102180433B1 (enExample)
CN (2) CN112432926B (enExample)
SG (2) SG11201900509YA (enExample)
TW (1) TWI728157B (enExample)
WO (1) WO2018023078A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3528047A1 (en) * 2018-02-14 2019-08-21 ASML Netherlands B.V. Method and apparatus for measuring a parameter of interest using image plane detection techniques
US10809124B2 (en) * 2018-05-07 2020-10-20 Perkinelmer Health Sciences, Inc. Spectrometers and instruments including them
EP3575875A1 (en) * 2018-05-31 2019-12-04 ASML Netherlands B.V. Measurement apparatus and method of measuring a target
KR102729956B1 (ko) * 2018-08-28 2024-11-13 케이엘에이 코포레이션 2-회절된 차수들의 이미징을 사용한 축외 조명 오버레이 측정
IL281502B2 (en) * 2018-09-19 2023-11-01 Asml Netherlands Bv Metrology sensor for position metrology
JP7431824B2 (ja) * 2018-11-21 2024-02-15 ケーエルエー コーポレイション スキャトロメトリオーバーレイ（ｓｃｏｌ）測定方法及びｓｃｏｌ測定システム
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
WO2021151754A1 (en) * 2020-01-29 2021-08-05 Asml Netherlands B.V. Metrology method and device for measuring a periodic structure on a substrate
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
US11640118B2 (en) 2020-08-17 2023-05-02 Tokyo Electron Limited Method of pattern alignment for field stitching
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
WO2023072880A1 (en) * 2021-10-29 2023-05-04 Asml Netherlands B.V. Inspection apparatus, polarization-maintaining rotatable beam displacer, and method
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
CN119317878A (zh) * 2022-07-19 2025-01-14 Asml荷兰有限公司 用于光刻系统的增强对准设备
CN119422103A (zh) * 2022-08-10 2025-02-11 Asml荷兰有限公司 量测方法和相关联的量测装置
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600638A (nl) * 1986-03-12 1987-10-01 Philips Nv Inrichting voor het ten opzichte van elkaar uitrichten van een masker en een substraat.
JPH05157521A (ja) * 1991-08-29 1993-06-22 Nkk Corp エリプソパラメータ測定方法及びエリプソメータ
US5734498A (en) * 1994-05-09 1998-03-31 The Regents Of The University Of California Illuminator elements for conventional light microscopes
US6710876B1 (en) * 2000-08-14 2004-03-23 Kla-Tencor Technologies Corporation Metrology system using optical phase
US6768543B1 (en) 2001-11-01 2004-07-27 Arun Ananth Aiyer Wafer inspection apparatus with unique illumination methodology and method of operation
US7957066B2 (en) 2003-02-21 2011-06-07 Kla-Tencor Corporation Split field inspection system using small catadioptric objectives
US7561282B1 (en) 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
US8120996B2 (en) * 2006-04-04 2012-02-21 Tesa Scribos Gmbh Device and method for microstructuring a storage medium and storage medium comprising a microstructured region
US7692792B2 (en) * 2006-06-22 2010-04-06 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7701577B2 (en) * 2007-02-21 2010-04-20 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
SG152187A1 (en) * 2007-10-25 2009-05-29 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
NL2006229A (en) * 2010-03-18 2011-09-20 Asml Netherlands Bv Inspection method and apparatus, and associated computer readable product.
US8896832B2 (en) * 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
NL2010259A (en) * 2012-04-12 2013-10-16 Asml Holding Nv Position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method, optical element.
US8817273B2 (en) * 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
NL2011181A (en) 2012-08-16 2014-02-18 Asml Netherlands Bv Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method.
CN108761752A (zh) * 2012-10-30 2018-11-06 加州理工学院 傅立叶重叠关联成像系统、设备和方法
US9091650B2 (en) * 2012-11-27 2015-07-28 Kla-Tencor Corporation Apodization for pupil imaging scatterometry
KR101855243B1 (ko) 2013-08-07 2018-05-04 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
CN105765690B (zh) * 2013-08-22 2019-01-18 加州理工学院 可变照明傅立叶重叠关联成像设备、系统以及方法
US10795144B2 (en) * 2014-12-06 2020-10-06 Howard Hughes Medical Institute Microscopy with structured plane illumination and point accumulation for imaging and nanoscale topography

Also Published As

Publication number Publication date
US20180031424A1 (en) 2018-02-01
SG11201900509YA (en) 2019-02-27
CN109564160B (zh) 2020-11-10
JP6771647B2 (ja) 2020-10-21
SG10201912512UA (en) 2020-02-27
CN112432926A (zh) 2021-03-02
KR20190026039A (ko) 2019-03-12
CN109564160A (zh) 2019-04-02
US10048132B2 (en) 2018-08-14
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
TWI728157B (zh) 2021-05-21
US20180335346A1 (en) 2018-11-22
KR102180433B1 (ko) 2020-11-19
US10401228B2 (en) 2019-09-03
JP2019526053A (ja) 2019-09-12

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