TWI728157B - 同時捕捉來自多個目標之重疊信號 - Google Patents

同時捕捉來自多個目標之重疊信號 Download PDF

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Publication number
TWI728157B
TWI728157B TW106125402A TW106125402A TWI728157B TW I728157 B TWI728157 B TW I728157B TW 106125402 A TW106125402 A TW 106125402A TW 106125402 A TW106125402 A TW 106125402A TW I728157 B TWI728157 B TW I728157B
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TW
Taiwan
Prior art keywords
illumination
pupil plane
path
pupil
target
Prior art date
Application number
TW106125402A
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English (en)
Chinese (zh)
Other versions
TW201805593A (zh
Inventor
安卓 Ｖ 希爾
阿農 馬那森
尤瑞 帕斯卡維爾
尤法 路巴希福斯基
Original Assignee
美商克萊譚克公司
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Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201805593A publication Critical patent/TW201805593A/zh
Application granted granted Critical
Publication of TWI728157B publication Critical patent/TWI728157B/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
TW106125402A 2016-07-28 2017-07-28 同時捕捉來自多個目標之重疊信號 TWI728157B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/222,503 2016-07-28
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets

Publications (2)

Publication Number Publication Date
TW201805593A TW201805593A (zh) 2018-02-16
TWI728157B true TWI728157B (zh) 2021-05-21

Family

ID=61009490

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106125402A TWI728157B (zh) 2016-07-28 2017-07-28 同時捕捉來自多個目標之重疊信號

Country Status (7)

Country Link
US (2) US10048132B2 (enExample)
JP (1) JP6771647B2 (enExample)
KR (1) KR102180433B1 (enExample)
CN (2) CN109564160B (enExample)
SG (2) SG10201912512UA (enExample)
TW (1) TWI728157B (enExample)
WO (1) WO2018023078A1 (enExample)

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EP3528047A1 (en) * 2018-02-14 2019-08-21 ASML Netherlands B.V. Method and apparatus for measuring a parameter of interest using image plane detection techniques
US10809124B2 (en) * 2018-05-07 2020-10-20 Perkinelmer Health Sciences, Inc. Spectrometers and instruments including them
EP3575875A1 (en) * 2018-05-31 2019-12-04 ASML Netherlands B.V. Measurement apparatus and method of measuring a target
EP3811154A4 (en) * 2018-08-28 2022-04-06 Kla-Tencor Corporation OVERLAY MEASUREMENT WITH OFF-AXIAL ILLUMINATION USING DUAL DIFFRACTION ORDER IMAGING
CN118330995A (zh) * 2018-09-19 2024-07-12 Asml荷兰有限公司 用于位置量测的量测传感器
US11119417B2 (en) * 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
CN115004113A (zh) * 2020-01-29 2022-09-02 Asml荷兰有限公司 量测方法和用于测量衬底上的周期性结构的装置
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
WO2022040221A1 (en) 2020-08-17 2022-02-24 Tokyo Electron Limited Method for producing overlay results with absolute reference for semiconductor manufacturing
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
WO2023072880A1 (en) * 2021-10-29 2023-05-04 Asml Netherlands B.V. Inspection apparatus, polarization-maintaining rotatable beam displacer, and method
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
CN119317878A (zh) * 2022-07-19 2025-01-14 Asml荷兰有限公司 用于光刻系统的增强对准设备
CN119422103A (zh) * 2022-08-10 2025-02-11 Asml荷兰有限公司 量测方法和相关联的量测装置
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

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US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
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US20160195705A1 (en) * 2014-12-06 2016-07-07 Howard Hughes Medical Institute Microscopy with structured plane illumination and point accumulation for imaging and nanoscale topography

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US20090168062A1 (en) * 2007-10-25 2009-07-02 Asml Netherlands B.V. Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell, and Device Manufacturing Method to Measure a Property of a Substrate
US8896832B2 (en) * 2010-06-17 2014-11-25 Kla-Tencor Corp. Discrete polarization scatterometry
US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
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Also Published As

Publication number Publication date
CN112432926B (zh) 2025-10-10
CN109564160A (zh) 2019-04-02
CN112432926A (zh) 2021-03-02
KR20190026039A (ko) 2019-03-12
SG11201900509YA (en) 2019-02-27
SG10201912512UA (en) 2020-02-27
JP2019526053A (ja) 2019-09-12
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
JP6771647B2 (ja) 2020-10-21
US10401228B2 (en) 2019-09-03
US10048132B2 (en) 2018-08-14
KR102180433B1 (ko) 2020-11-19
CN109564160B (zh) 2020-11-10
US20180335346A1 (en) 2018-11-22
US20180031424A1 (en) 2018-02-01

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