CN109564160B - 同时捕捉来自多个目标的重叠信号 - Google Patents

同时捕捉来自多个目标的重叠信号 Download PDF

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Publication number
CN109564160B
CN109564160B CN201780046742.XA CN201780046742A CN109564160B CN 109564160 B CN109564160 B CN 109564160B CN 201780046742 A CN201780046742 A CN 201780046742A CN 109564160 B CN109564160 B CN 109564160B
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China
Prior art keywords
illumination
path
pupil
collection
target
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CN201780046742.XA
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Chinese (zh)
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CN109564160A (zh
Inventor
安迪（安德鲁）·希尔
阿姆农·玛纳森
尤里·帕斯卡维尔
尤瓦尔·卢巴舍夫斯基
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KLA Corp
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KLA Tencor Corp
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Priority to CN202011221908.7A priority Critical patent/CN112432926B/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/42—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect
    • G02B27/4233—Diffraction optics, i.e. systems including a diffractive element being designed for providing a diffractive effect having a diffractive element [DOE] contributing to a non-imaging application
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N2021/4792—Polarisation of scatter light

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Peptides Or Proteins (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
CN201780046742.XA 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号 Active CN109564160B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011221908.7A CN112432926B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/222,503 2016-07-28
US15/222,503 US10048132B2 (en) 2016-07-28 2016-07-28 Simultaneous capturing of overlay signals from multiple targets
PCT/US2017/044528 WO2018023078A1 (en) 2016-07-28 2017-07-28 Simultaneous capturing of overlay signals from multiple targets

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202011221908.7A Division CN112432926B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

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CN109564160A CN109564160A (zh) 2019-04-02
CN109564160B true CN109564160B (zh) 2020-11-10

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CN202011221908.7A Active CN112432926B (zh) 2016-07-28 2017-07-28 同时捕捉来自多个目标的重叠信号

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US (2) US10048132B2 (enExample)
JP (1) JP6771647B2 (enExample)
KR (1) KR102180433B1 (enExample)
CN (2) CN109564160B (enExample)
SG (2) SG10201912512UA (enExample)
TW (1) TWI728157B (enExample)
WO (1) WO2018023078A1 (enExample)

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EP3528047A1 (en) * 2018-02-14 2019-08-21 ASML Netherlands B.V. Method and apparatus for measuring a parameter of interest using image plane detection techniques
US10809124B2 (en) * 2018-05-07 2020-10-20 Perkinelmer Health Sciences, Inc. Spectrometers and instruments including them
EP3575875A1 (en) * 2018-05-31 2019-12-04 ASML Netherlands B.V. Measurement apparatus and method of measuring a target
EP3811154A4 (en) * 2018-08-28 2022-04-06 Kla-Tencor Corporation OVERLAY MEASUREMENT WITH OFF-AXIAL ILLUMINATION USING DUAL DIFFRACTION ORDER IMAGING
CN118330995A (zh) * 2018-09-19 2024-07-12 Asml荷兰有限公司 用于位置量测的量测传感器
US11119417B2 (en) * 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11073768B2 (en) * 2019-06-26 2021-07-27 Kla Corporation Metrology target for scanning metrology
US11359916B2 (en) * 2019-09-09 2022-06-14 Kla Corporation Darkfield imaging of grating target structures for overlay measurement
US11933717B2 (en) 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
CN115004113A (zh) * 2020-01-29 2022-09-02 Asml荷兰有限公司 量测方法和用于测量衬底上的周期性结构的装置
US11604149B2 (en) * 2020-04-23 2023-03-14 Kla Corporation Metrology methods and optical schemes for measurement of misregistration by using hatched target designs
WO2022040221A1 (en) 2020-08-17 2022-02-24 Tokyo Electron Limited Method for producing overlay results with absolute reference for semiconductor manufacturing
US11428642B2 (en) * 2021-01-04 2022-08-30 Kla Corporation Scanning scatterometry overlay measurement
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US11531275B1 (en) * 2021-08-25 2022-12-20 Kla Corporation Parallel scatterometry overlay metrology
WO2023072880A1 (en) * 2021-10-29 2023-05-04 Asml Netherlands B.V. Inspection apparatus, polarization-maintaining rotatable beam displacer, and method
JP2023116048A (ja) * 2022-02-09 2023-08-22 キオクシア株式会社 計測装置および計測方法
CN119317878A (zh) * 2022-07-19 2025-01-14 Asml荷兰有限公司 用于光刻系统的增强对准设备
CN119422103A (zh) * 2022-08-10 2025-02-11 Asml荷兰有限公司 量测方法和相关联的量测装置
KR20240108945A (ko) 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
US12411420B2 (en) * 2023-09-29 2025-09-09 Kla Corporation Small in-die target design for overlay measurement
US20250306477A1 (en) * 2024-03-27 2025-10-02 Kla Corporation Single grab pupil landscape via outside the objective lens broadband illumination

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US20130278942A1 (en) * 2012-04-24 2013-10-24 Nanometrics Incorporated Dark field diffraction based overlay
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Also Published As

Publication number Publication date
CN112432926B (zh) 2025-10-10
CN109564160A (zh) 2019-04-02
CN112432926A (zh) 2021-03-02
KR20190026039A (ko) 2019-03-12
SG11201900509YA (en) 2019-02-27
SG10201912512UA (en) 2020-02-27
JP2019526053A (ja) 2019-09-12
TW201805593A (zh) 2018-02-16
WO2018023078A1 (en) 2018-02-01
JP6771647B2 (ja) 2020-10-21
US10401228B2 (en) 2019-09-03
US10048132B2 (en) 2018-08-14
KR102180433B1 (ko) 2020-11-19
TWI728157B (zh) 2021-05-21
US20180335346A1 (en) 2018-11-22
US20180031424A1 (en) 2018-02-01

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