SG11201811130YA - Film formation method - Google Patents

Film formation method

Info

Publication number
SG11201811130YA
SG11201811130YA SG11201811130YA SG11201811130YA SG11201811130YA SG 11201811130Y A SG11201811130Y A SG 11201811130YA SG 11201811130Y A SG11201811130Y A SG 11201811130YA SG 11201811130Y A SG11201811130Y A SG 11201811130YA SG 11201811130Y A SG11201811130Y A SG 11201811130YA
Authority
SG
Singapore
Prior art keywords
film
film formation
formation method
forming
catalyst
Prior art date
Application number
SG11201811130YA
Other languages
English (en)
Inventor
Katsuhisa Tanabe
Tatsushi Someya
Naoshi Nishimura
Tetsuya Sasamura
Eriko FURUYA
Original Assignee
C Uyemura & Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by C Uyemura & Co Ltd filed Critical C Uyemura & Co Ltd
Publication of SG11201811130YA publication Critical patent/SG11201811130YA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/42—Coating with noble metals
    • C23C18/44—Coating with noble metals using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
    • C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
    • C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
    • C23C18/1837—Multistep pretreatment
    • C23C18/1841—Multistep pretreatment with use of metal first
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
SG11201811130YA 2016-06-13 2017-04-27 Film formation method SG11201811130YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016116993A JP6329589B2 (ja) 2016-06-13 2016-06-13 皮膜形成方法
PCT/JP2017/016793 WO2017217125A1 (ja) 2016-06-13 2017-04-27 皮膜形成方法

Publications (1)

Publication Number Publication Date
SG11201811130YA true SG11201811130YA (en) 2019-01-30

Family

ID=60663560

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201811130YA SG11201811130YA (en) 2016-06-13 2017-04-27 Film formation method

Country Status (9)

Country Link
US (1) US10941493B2 (zh)
EP (1) EP3470546B1 (zh)
JP (1) JP6329589B2 (zh)
KR (1) KR102230083B1 (zh)
CN (1) CN109312463B (zh)
MY (1) MY186814A (zh)
SG (1) SG11201811130YA (zh)
TW (1) TWI693303B (zh)
WO (1) WO2017217125A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6811041B2 (ja) * 2016-07-04 2021-01-13 上村工業株式会社 無電解白金めっき浴
JP6572376B1 (ja) 2018-11-30 2019-09-11 上村工業株式会社 無電解めっき浴
JP7285123B2 (ja) * 2019-04-10 2023-06-01 上村工業株式会社 金めっき方法及びめっき皮膜
CN110204885B (zh) * 2019-05-24 2021-02-12 合肥安利聚氨酯新材料有限公司 一种无溶剂聚氨酯树脂皮膜及其制备方法和鞋革
JP6754151B1 (ja) 2020-02-18 2020-09-09 日本高純度化学株式会社 めっき積層体
JP6754152B1 (ja) * 2020-02-18 2020-09-09 日本高純度化学株式会社 めっき積層体
WO2022239017A1 (en) * 2021-05-09 2022-11-17 Prerna Goradia Novel methodology for coating non-conducting articles with broad-spectrum antimicrobial electroless plating layers
TWI824612B (zh) * 2022-07-11 2023-12-01 台灣上村股份有限公司 金鈀金鍍膜結構及其製作方法
KR102666518B1 (ko) * 2023-08-31 2024-05-21 (주)엠케이켐앤텍 반도체 패키지용 기판 및 이를 포함하는 반도체 패키지

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JPH05327187A (ja) * 1992-05-18 1993-12-10 Ishihara Chem Co Ltd プリント配線板及びその製造法
JP3345529B2 (ja) * 1995-06-20 2002-11-18 日立化成工業株式会社 ワイヤボンディング用端子とその製造方法並びにそのワイヤボンディング端子を用いた半導体搭載用基板の製造方法
JP3466521B2 (ja) 1999-10-04 2003-11-10 新光電気工業株式会社 置換型無電解金めっき液及び無電解金めっき方法
DE10048844A1 (de) * 2000-10-02 2002-04-11 Basf Ag Verfahren zur Herstellung von Platinmetall-Katalysatoren
JP3866164B2 (ja) * 2002-07-05 2007-01-10 京セラ株式会社 配線基板
JP3994279B2 (ja) * 2002-10-21 2007-10-17 奥野製薬工業株式会社 無電解金めっき液
KR100749992B1 (ko) * 2003-06-10 2007-08-16 닛코킨조쿠 가부시키가이샤 무전해 금도금액
JP2005054267A (ja) * 2003-07-24 2005-03-03 Electroplating Eng Of Japan Co 無電解金めっき方法
JP2005317729A (ja) 2004-04-28 2005-11-10 Hitachi Chem Co Ltd 接続端子、その接続端子を用いた半導体パッケージ及び半導体パッケージの製造方法
KR100688833B1 (ko) * 2005-10-25 2007-03-02 삼성전기주식회사 인쇄회로기판의 도금층 형성방법 및 이로부터 제조된인쇄회로기판
JP5526459B2 (ja) 2006-12-06 2014-06-18 上村工業株式会社 無電解金めっき浴及び無電解金めっき方法
JP5526458B2 (ja) * 2006-12-06 2014-06-18 上村工業株式会社 無電解金めっき浴及び無電解金めっき方法
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CN102605359A (zh) * 2011-01-25 2012-07-25 台湾上村股份有限公司 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺
JP5983336B2 (ja) * 2011-11-17 2016-08-31 Tdk株式会社 被覆体及び電子部品
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Also Published As

Publication number Publication date
KR102230083B1 (ko) 2021-03-22
KR20190008284A (ko) 2019-01-23
CN109312463A (zh) 2019-02-05
JP2017222891A (ja) 2017-12-21
JP6329589B2 (ja) 2018-05-23
EP3470546A1 (en) 2019-04-17
WO2017217125A1 (ja) 2017-12-21
EP3470546A4 (en) 2019-05-08
TWI693303B (zh) 2020-05-11
US20190345612A1 (en) 2019-11-14
TW201819681A (zh) 2018-06-01
MY186814A (en) 2021-08-23
US10941493B2 (en) 2021-03-09
CN109312463B (zh) 2021-05-14
EP3470546B1 (en) 2021-10-13

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