SG11201810732UA - Method for manufacturing annular member and annular member - Google Patents

Method for manufacturing annular member and annular member

Info

Publication number
SG11201810732UA
SG11201810732UA SG11201810732UA SG11201810732UA SG11201810732UA SG 11201810732U A SG11201810732U A SG 11201810732UA SG 11201810732U A SG11201810732U A SG 11201810732UA SG 11201810732U A SG11201810732U A SG 11201810732UA SG 11201810732U A SG11201810732U A SG 11201810732UA
Authority
SG
Singapore
Prior art keywords
silicon
abutting surface
annular member
manufacturing
melt
Prior art date
Application number
SG11201810732UA
Other languages
English (en)
Inventor
Atsushi Ikari
Satoshi Fujii
Original Assignee
Thinkon New Tech Japan Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thinkon New Tech Japan Corporation filed Critical Thinkon New Tech Japan Corporation
Publication of SG11201810732UA publication Critical patent/SG11201810732UA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/06—Joining of crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32807—Construction (includes replacing parts of the apparatus)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG11201810732UA 2017-05-19 2018-03-07 Method for manufacturing annular member and annular member SG11201810732UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017100173A JP6278498B1 (ja) 2017-05-19 2017-05-19 リング状部材の製造方法及びリング状部材
PCT/JP2018/008870 WO2018211788A1 (ja) 2017-05-19 2018-03-07 リング状部材の製造方法及びリング状部材

Publications (1)

Publication Number Publication Date
SG11201810732UA true SG11201810732UA (en) 2018-12-28

Family

ID=61195744

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810732UA SG11201810732UA (en) 2017-05-19 2018-03-07 Method for manufacturing annular member and annular member

Country Status (8)

Country Link
US (2) US10984988B2 (ja)
EP (1) EP3454361B1 (ja)
JP (1) JP6278498B1 (ja)
KR (1) KR102214968B1 (ja)
CN (1) CN109287126B (ja)
SG (1) SG11201810732UA (ja)
TW (1) TWI765004B (ja)
WO (1) WO2018211788A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114388324A (zh) * 2020-10-22 2022-04-22 中微半导体设备(上海)股份有限公司 一种接地环及等离子体刻蚀设备

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EP0615431A4 (en) * 1992-08-27 1995-04-19 Craig John Hubbard Ankle joint support.
JP2907375B2 (ja) * 1994-04-21 1999-06-21 古河電気工業株式会社 管路気中ケーブル接続部の防塵リング
JP2003257807A (ja) * 2002-03-07 2003-09-12 Shin Etsu Chem Co Ltd シリコン加工品の製造方法およびシリコン加工品
US7083694B2 (en) * 2003-04-23 2006-08-01 Integrated Materials, Inc. Adhesive of a silicon and silica composite particularly useful for joining silicon parts
US7074693B2 (en) * 2003-06-24 2006-07-11 Integrated Materials, Inc. Plasma spraying for joining silicon parts
TW200520632A (en) * 2003-09-05 2005-06-16 Tokyo Electron Ltd Focus ring and plasma processing apparatus
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
KR100684544B1 (ko) * 2005-07-15 2007-02-20 호서대학교 산학협력단 고속처리 고온공정에서 웨이퍼의 스트레스 측정장치
JP5154124B2 (ja) 2007-03-29 2013-02-27 東京エレクトロン株式会社 プラズマ処理装置
JP5424445B2 (ja) * 2007-06-12 2014-02-26 国立大学法人京都工芸繊維大学 半導体基板の製造方法および半導体基板
US8679288B2 (en) * 2008-06-09 2014-03-25 Lam Research Corporation Showerhead electrode assemblies for plasma processing apparatuses
KR101017160B1 (ko) * 2008-06-17 2011-02-25 주식회사 동부하이텍 불소 확산 방지막 형성 방법
JP5100617B2 (ja) * 2008-11-07 2012-12-19 東京エレクトロン株式会社 リング状部材及びその製造方法
KR101041947B1 (ko) * 2008-12-23 2011-06-15 청주대학교 산학협력단 에스아이오씨 박막 열처리 장치
CN102460650B (zh) * 2009-06-24 2014-10-01 佳能安内华股份有限公司 真空加热/冷却装置及磁阻元件的制造方法
JP5952550B2 (ja) * 2011-11-28 2016-07-13 株式会社半導体エネルギー研究所 貼り合わせ装置
JP5955658B2 (ja) * 2012-06-15 2016-07-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
CN103797285B (zh) * 2012-08-28 2016-04-06 株式会社理研 活塞环
KR200483130Y1 (ko) * 2012-10-20 2017-04-18 어플라이드 머티어리얼스, 인코포레이티드 세그먼트화된 포커스 링 조립체
TW201432826A (zh) * 2013-02-01 2014-08-16 Chipbond Technology Corp 半導體封裝製程及其結構
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング

Also Published As

Publication number Publication date
WO2018211788A1 (ja) 2018-11-22
TWI765004B (zh) 2022-05-21
US11551915B2 (en) 2023-01-10
JP2018195764A (ja) 2018-12-06
EP3454361B1 (en) 2021-05-26
US20190259581A1 (en) 2019-08-22
CN109287126A (zh) 2019-01-29
EP3454361A1 (en) 2019-03-13
JP6278498B1 (ja) 2018-02-14
CN109287126B (zh) 2021-11-09
US10984988B2 (en) 2021-04-20
KR102214968B1 (ko) 2021-02-09
US20210225617A1 (en) 2021-07-22
EP3454361A4 (en) 2020-03-11
TW201902307A (zh) 2019-01-01
KR20190002635A (ko) 2019-01-08

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