TW201612346A - Film-forming device and manufacturing method for a film-forming substrate - Google Patents

Film-forming device and manufacturing method for a film-forming substrate

Info

Publication number
TW201612346A
TW201612346A TW104131974A TW104131974A TW201612346A TW 201612346 A TW201612346 A TW 201612346A TW 104131974 A TW104131974 A TW 104131974A TW 104131974 A TW104131974 A TW 104131974A TW 201612346 A TW201612346 A TW 201612346A
Authority
TW
Taiwan
Prior art keywords
film
workpiece
forming
target
conveying
Prior art date
Application number
TW104131974A
Other languages
Chinese (zh)
Other versions
TWI611034B (en
Inventor
Yoshio Kawamata
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Publication of TW201612346A publication Critical patent/TW201612346A/en
Application granted granted Critical
Publication of TWI611034B publication Critical patent/TWI611034B/en

Links

Abstract

The present invention provides a small-sized and space-saving film-forming device and a manufacturing method for a film-forming substrate. The film can be formed at high speed and high efficiency with uniform thickness rapidly and efficiently regardless of the shape of a workpiece. The film-forming device of the present invention comprises: a chamber, into which a sputtering gas is introduced; a conveying part which is disposed in the chamber and provided with a conveying path for cyclic conveying of work pieces; a target which is formed of a film-forming material for accumulating on the workpiece to become a film and is disposed at a position separated from and opposed to the conveying path; a first power supply part which applies power to the target to produce sputtering gas plasma and make the film-forming material accumulate on the workpiece; and a power supply control part which changes the power supplied by the first power supply part to the target according to the workpiece relative to the position of the target when the workpiece moves by the conveying part through a film-forming zone where the film-forming material is accumulated.
TW104131974A 2014-09-30 2015-09-30 Film forming apparatus and film forming substrate manufacturing method TWI611034B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014202501 2014-09-30
JP2015172085A JP6411975B2 (en) 2014-09-30 2015-09-01 Film forming apparatus and film forming substrate manufacturing method

Publications (2)

Publication Number Publication Date
TW201612346A true TW201612346A (en) 2016-04-01
TWI611034B TWI611034B (en) 2018-01-11

Family

ID=55864037

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104131974A TWI611034B (en) 2014-09-30 2015-09-30 Film forming apparatus and film forming substrate manufacturing method

Country Status (3)

Country Link
JP (1) JP6411975B2 (en)
KR (1) KR102410186B1 (en)
TW (1) TWI611034B (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI688032B (en) * 2018-03-22 2020-03-11 日商芝浦機械電子裝置股份有限公司 Vacuum processing device and tray
TWI695183B (en) * 2017-09-07 2020-06-01 日商芝浦機械電子裝置股份有限公司 Film forming device
TWI704594B (en) * 2017-12-27 2020-09-11 日商佳能安內華股份有限公司 Film forming method and film forming device
TWI710653B (en) * 2017-09-29 2020-11-21 日商芝浦機械電子裝置股份有限公司 Film forming device
CN113789500A (en) * 2021-08-04 2021-12-14 湖北三峡职业技术学院 Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle
TWI821636B (en) * 2020-04-01 2023-11-11 日商新柯隆股份有限公司 Sputtering device and film forming method using the sputtering device

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7039224B2 (en) * 2016-10-13 2022-03-22 芝浦メカトロニクス株式会社 Electronic component manufacturing equipment and electronic component manufacturing method
JP7002302B2 (en) * 2016-12-13 2022-02-10 芝浦メカトロニクス株式会社 Film forming equipment
JP7138504B2 (en) * 2018-07-31 2022-09-16 キヤノントッキ株式会社 Film forming apparatus and electronic device manufacturing method
JP7064407B2 (en) * 2018-08-31 2022-05-10 キヤノントッキ株式会社 Film forming equipment and control method of film forming equipment
CN111286712B (en) * 2018-12-10 2022-05-17 苏州能讯高能半导体有限公司 Target sputtering equipment and target sputtering system
EP3987079A4 (en) * 2019-06-24 2023-03-01 TRUMPF Huettinger Sp. Z o. o. Method of adjusting the output power of a power supply supplying electrical power to a plasma, plasma apparatus and power supply
WO2022024295A1 (en) * 2020-07-30 2022-02-03 株式会社シンクロン Transfer device and film forming device using same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0409451A1 (en) * 1989-07-18 1991-01-23 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
JPH03264667A (en) * 1990-03-12 1991-11-25 Shin Meiwa Ind Co Ltd Carrousel-type sputtering device
DE69842229D1 (en) * 1997-02-20 2011-06-01 Shibaura Mechatronics Corp POWER SUPPLY TO SPUTTER AND SPUTTER DEVICE USING THIS
JP4345869B2 (en) * 1997-05-16 2009-10-14 Ｈｏｙａ株式会社 Film thickness correction mechanism for sputter deposition
JP4321785B2 (en) 2006-06-22 2009-08-26 芝浦メカトロニクス株式会社 Film forming apparatus and film forming method
KR101258882B1 (en) * 2008-02-13 2013-04-29 가부시키가이샤 소니 디에이디씨 Magnetron sputtering apparatus and magnetron sputtering method
JP2009228062A (en) * 2008-03-24 2009-10-08 Panasonic Corp Sputtering film deposition apparatus and sputtering film deposition method
EP2437280A1 (en) * 2010-09-30 2012-04-04 Applied Materials, Inc. Systems and methods for forming a layer of sputtered material
TW201339341A (en) * 2012-03-19 2013-10-01 Shibaura Mechatronics Corp Film-forming method and sputtering apparatus

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695183B (en) * 2017-09-07 2020-06-01 日商芝浦機械電子裝置股份有限公司 Film forming device
TWI710653B (en) * 2017-09-29 2020-11-21 日商芝浦機械電子裝置股份有限公司 Film forming device
US10896841B2 (en) 2017-09-29 2021-01-19 Shibaura Mechatronics Corporation Film formation apparatus
TWI704594B (en) * 2017-12-27 2020-09-11 日商佳能安內華股份有限公司 Film forming method and film forming device
US11289305B2 (en) 2017-12-27 2022-03-29 Canon Anelva Corporation Deposition method and deposition apparatus
TWI688032B (en) * 2018-03-22 2020-03-11 日商芝浦機械電子裝置股份有限公司 Vacuum processing device and tray
TWI821636B (en) * 2020-04-01 2023-11-11 日商新柯隆股份有限公司 Sputtering device and film forming method using the sputtering device
CN113789500A (en) * 2021-08-04 2021-12-14 湖北三峡职业技术学院 Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle
CN113789500B (en) * 2021-08-04 2023-07-25 湖北三峡职业技术学院 Ion plating device and method capable of automatically adjusting sputtering angle and incidence angle of ion beam

Also Published As

Publication number Publication date
KR102410186B1 (en) 2022-06-20
JP6411975B2 (en) 2018-10-24
TWI611034B (en) 2018-01-11
KR20160038809A (en) 2016-04-07
JP2016069727A (en) 2016-05-09

Similar Documents

Publication Publication Date Title
TW201612346A (en) Film-forming device and manufacturing method for a film-forming substrate
WO2013098702A3 (en) Mixed mode pulsing etching in plasma processing systems
EP3581209A3 (en) Reactive gas generation system and method of treatment using reactive gas
AR100862A1 (en) AEROSOL GENERATOR ARTICLE WITH MULTIMATERIAL SUSCEPTOR
SG10201804322UA (en) Variable frequency microwave (vfm) processes and applications in semiconductor thin film fabrications
MX2022014936A (en) Directed energy deposition to facilitate high speed applications.
WO2012115907A3 (en) Edge ring for a thermal processing chamber
MY193979A (en) Deposition apparatus and physical vapor deposition chamber
MX2016000634A (en) Optimised method for breaking chlorella cell walls by means of very high pressure homogenisation.
MX2016005564A (en) Oxidation barrier layer.
MX2016005907A (en) Method for forming intermediate layer formed between substrate and dlc film, method for forming dlc film, and intermediate layer formed between substrate and dlc film.
MX2016005328A (en) Process for machining a lens.
MX2015014977A (en) Method of manufacturing multi-layer thin film, member including the same and electronic product including the same.
WO2016072850A3 (en) Atomic layer deposition apparatus and method for processing substrates using an apparatus
WO2014022872A3 (en) Apparatus and method for the plasma coating of a substrate, in particular a press platen
TW201614087A (en) Plasma processing apparatus and plasma processing method
RU2013130575A (en) METHOD FOR APPLYING PROTECTIVE COATING TO SURFACE OF STEEL PRODUCT
AR092287A1 (en) SYSTEM AND METHOD TO REDUCE THE EXCEDENT MATERIAL IN CURRENCY COUPLING PRODUCTS
JP2013189707A5 (en) Deposition equipment
TW201614113A (en) Liner for epi chamber
SG10201902076XA (en) Honeycomb multi-zone gas distribution plate
MX2016016573A (en) Sputtering target.
RU2013145838A (en) METHOD FOR FORMING A HEAT-RESISTANT NANOCOMPOSITE COATING ON THE SURFACE OF PRODUCTS
RU2013130574A (en) METHOD FOR NANOCOMPOSITE COATING FORMATION ON PRODUCT SURFACE
WO2014154424A3 (en) Method for a diamond vapor deposition