TWI688032B - Vacuum processing device and tray - Google Patents

Abstract

The invention provides a vacuum processing device and a tray which can suppress the leakage of reaction gas. The present invention includes: a chamber 20 in which the interior can be set to a vacuum; a rotating platform 31 provided in the chamber 20 to circulate and transport a workpiece W with a trajectory of the circumference centering on the rotation axis of the rotating platform 31; a plurality The pallet 1 is mounted on the rotating platform 31 and mounts the workpiece W; and the processing unit introduces the reaction gas G around the workpiece W transported by the rotating platform 31 and performs predetermined processing using plasma; and the processing unit has: The shield member 8 and the shield member 58 are arranged along the radial direction of the rotary table 31 between the surface of the tray 1 facing the processing section and the space through which the workpiece W placed on the tray 1 can pass. The surface of each tray 1 facing the processing section has a portion that is continuous along a circumferential trajectory and becomes the same plane.

Description

Vacuum processing device and tray

The invention relates to a vacuum processing device and a tray.

In the manufacturing steps of various products such as semiconductor devices, liquid crystal displays (displays), and disks, thin films such as optical films are sometimes formed on work such as wafers or glass substrates. The thin film can be produced by forming a film of metal or the like on the workpiece, or performing etching, film treatment such as oxidation or nitridation on the formed film.

Film formation or film treatment can be performed by various methods, and as one of them, there is a method using plasma. In film formation, an inert gas as a reaction gas is introduced into a chamber where a target is arranged, and a DC voltage is applied to the target. Ions of the plasmaized inert gas collide with the target, and the material hit from the target accumulates on the workpiece to form a film. In the membrane process, a process gas (reaction gas) is introduced into a chamber where electrodes are arranged, and a high-frequency voltage is applied to the electrodes. Membrane treatment is performed by causing active species such as ions and radicals of the plasma-treated gas to collide with the membrane on the workpiece.

There is a vacuum processing apparatus in which a rotating table is provided inside a chamber, and a plurality of processing sections are arranged in the circumferential direction above the rotating table so that such film formation and film processing can be continuously performed (for example, Refer to Patent Document 1). The processing unit is a unit in which a plurality of film forming units and film processing units are arranged. As described above, the workpiece is held on the rotating platform and transported to pass directly under the film forming unit and the film processing unit, thereby forming an optical film and the like.

In the vacuum processing apparatus as described above, a film forming chamber is formed by a shield member at a position in the chamber corresponding to the film forming unit. In addition, the membrane processing unit is provided with a cylindrical portion which is a cylindrical member, and a gas space into which the processing gas is introduced is formed from the inside of the cylindrical portion to the lower portion. Then, the window member of the dielectric is mounted on the flange formed in the opening of the cylindrical portion via a sealing member such as an O ring, thereby sealing the gas space. For the dielectric used in the window member, relatively hard and brittle materials such as quartz can be used. [Prior Art Literature] [Patent Literature]

[Patent Document 1] Japanese Patent No. 4428873

[Problem to be Solved by the Invention] In the vacuum processing apparatus as described above, in order to allow the passage of the workpiece, the edge of the shield member of the film forming unit is close to the workpiece with a gap. However, in the film forming unit, in order to minimize the leakage of the film forming material or inert gas from the shield member, it is preferable to reduce the distance between the shield member and the workpiece as much as possible. In addition, at the edge of the cylindrical portion of the film processing unit, in order to allow the passage of the workpiece, a gap is also opened to the workpiece. In the membrane processing unit, in order to minimize the leakage of the processing gas from the cylindrical portion, it is also preferable to reduce the distance between the cylindrical portion and the workpiece as much as possible. Therefore, a gap of, for example, several millimeters is set between the edge of the shield member and the work, and between the cylindrical part and the work.

However, there is a difference in height between the surface of the rotary table and the surface of the workpiece where the film is to be formed. In this way, even if the gap between the workpiece and the shielding member or the cylindrical portion is reduced, the gap between the surface of the rotating platform and the shielding member or the cylindrical portion in the portion where the workpiece does not exist increases. As a result, leakage or detour of the reaction gas occurs in the part where the workpiece does not exist. For example, when argon gas is used as the reaction gas in the film forming unit and oxygen is used as the reaction gas in the film processing unit, contamination caused by mixing one with the other will hinder the reaction of the two, which is not good.

An object of the present invention is to provide a vacuum processing apparatus and a tray that can suppress leakage of reaction gas from a processing section. [Technical means to solve the problem]

In order to achieve the above object, the vacuum processing apparatus of the present invention includes: a chamber capable of setting the interior to a vacuum; a rotating platform provided in the chamber so that the rotation axis of the rotating platform is the center of the circumference The workpiece is circulated and transported on a trajectory; a plurality of pallets are mounted on the rotating platform to place the workpiece; and a processing unit plasmaizes the introduced reaction gas to the workpiece transported through the rotating platform Perform prescribed processing; the processing section has a shield member, and the shield member is spaced apart from the surface of the tray opposite to the processing section to allow the workpiece placed on the tray to pass therethrough The shielding member is arranged along the radial direction of the rotating platform, and the surfaces of the plurality of trays facing the processing section have portions that are continuous along the trajectory of the circumference and become the same plane.

The workpiece may have a convex portion on a surface facing the processing portion, and the shield member may have a concave portion along the convex portion of the workpiece. The tray may have a convex portion along the concave portion of the shield member on a surface facing the processing portion. An adjustment portion that adjusts the film thickness distribution of the film to be formed may be provided on the shield member. The rotating platform may have a restricting portion that restricts the position of the tray. The tray may have an embedded portion into which the workpiece is embedded.

The processing section may include a film forming section in which a film forming material is deposited on the workpiece by sputtering to form a film. The processing section may include a film processing section that performs a film processing that reacts a film formed on the workpiece with a reaction gas.

The vacuum processing apparatus of another embodiment includes: a chamber capable of setting the interior to a vacuum; a rotating platform provided in the chamber to circulate and transport the workpiece in a circular trajectory; and a processing section that plasmaizes the introduced reaction gas Integrating to perform predetermined processing on the workpiece transported by the rotating platform; and the workpiece has a convex portion on a surface facing the processing portion, the processing portion has a shield member, the shield member and the passing The workpieces conveyed by the rotating platform are spaced apart and face each other, and have a concave portion along the convex portion of the workpiece, and a convex portion along the concave portion of the shield member is provided on the surface of the rotating platform, The surface of the convex portion of the rotating platform has a portion that is continuous along the trajectory of the circumference and becomes the same plane.

The rotating platform may have a mounting portion that mounts a pallet on which the workpiece is placed, and the surface of the rotating platform and the surface of the pallet are continuous and the same along the trajectory of the circumference Flat part.

The tray of another embodiment is used for a vacuum processing device and is provided for placing a workpiece. The vacuum processing device includes a chamber that can set the interior to a vacuum; a rotating platform is provided in the chamber to rotate the The rotation axis of the stage is set as a circumferential trajectory of the center, and the workpiece is cyclically transported; and the processing unit plasmaizes the introduced reaction gas to perform predetermined processing on the workpiece transported by the rotating platform; The processing section has a shielding member, and the shielding member is provided with a space through which the workpiece placed on the tray can pass through between the surface of the tray facing the processing section, the shielding member It is arranged along the radial direction of the rotating platform, and by mounting a plurality of the trays on the rotating platform, surfaces of the plurality of trays facing the processing section have the trajectory continuous along the circumference And become part of the same plane. [Effect of invention]

According to the present invention, the leakage of the reaction gas from the processing section can be suppressed.

The embodiment of the present invention (hereinafter, referred to as the present embodiment) will be specifically described with reference to the drawings. [Summary] The vacuum processing apparatus 100 shown in FIG. 1 is an apparatus that uses plasma to perform predetermined processing on a workpiece W by a processing section. In the present embodiment, the predetermined processing by the processing section is a processing of forming a compound film on the surface of each workpiece W. As shown in FIGS. 1 to 3, the vacuum processing apparatus 100 includes a rotating platform 31, a film forming unit 40A as a processing unit, a film forming unit 40B and a film forming unit 40C, a film processing unit 50A, and a film processing unit in the chamber 20 50B. In addition, FIG. 1 is a perspective perspective view of the vacuum processing apparatus 100, FIG. 2 is a perspective plan view, and FIG. 3 is a cross-sectional view taken along line A-A of FIG.

When the rotary table 31 rotates, the workpiece W placed on the pallet 1 (see FIGS. 5(A), 5(B), and 5(C)) of the rotary table 31 changes the rotation axis of the rotary table 31 ( Rotation center) The trajectory of the circle set as the center. By the movement, the workpiece W repeatedly passes through the position facing the film forming portion 40A, the film forming portion 40B, or the film forming portion 40C. Each time the film forming portion 40A, the film forming portion 40B, and the film forming portion 40C pass, the particles of the target 41A, the target 41B, and the target 41C are attached to the surface of the workpiece W by sputtering. In addition, the workpiece W repeatedly passes through the position facing the film processing section 50A or the film processing section 50B. Each time the passage passes, the particles attached to the surface of the workpiece W by the film forming portion 40A, the film forming portion 40B, and the film forming portion 40C combine with the substances in the introduced processing gas G2 to form a compound film.

[Workpiece] As shown in the side view of FIG. 4(A), the plan view of FIG. 4(B), and the perspective view of FIG. 4(C), the work W is the surface to be processed on the surface facing the processing section (hereinafter, It is assumed that the processing target surface Sp) has a convex portion Cp and a plate-shaped member having a concave portion Rp on the surface opposite to the convex portion Cp. The convex portion Cp refers to a curved portion where the center of curvature is on the opposite side of the processing target surface Sp on the processing target surface Sp, or when the processing target surface Sp includes a plurality of planes with different angles, different planes The connected parts (refer to FIG. 21(A), FIG. 21(B), and FIG. 21(C)). The concave portion Rp refers to a portion on the opposite side of the convex portion Cp. In the present embodiment, the workpiece W is a rectangular substrate, and the convex portion Cp is formed on the processing target surface Sp by the curved portion formed on one short side. That is, the side extended by bending is the convex portion Cp, and the side extending and contracted by bending is the concave portion Rp. In addition, the processing target surface Sp from the convex portion Cp to the other short side of the workpiece W is a flat surface.

[Tray] As shown in the side view of FIG. 5(A), the plan view of FIG. 5(B), and the perspective view of FIG. 5(C), the pallet 1 is a member on which the work W is placed. In the tray 1, the surface facing the processing section is called the facing surface 11. In the present embodiment, the tray 1 is a substantially fan-shaped plate-like body, and has a pair of side surfaces along the V-shape, that is, a slope 12. The end on the side close to the pair of inclined surfaces 12 is connected by the inner peripheral surface 13 along the straight line. An outer peripheral surface 14 along a convex shape in which orthogonal sides are combined is continuous at an end portion of the side of the pair of inclined surfaces 12 of the tray 1 that is away from each other. The mutually facing and parallel surfaces of the outer peripheral surface 14 are referred to as restricting surfaces 14a.

Each tray 1 has a convex portion 11 a along the concave portion 80 of the shield member 8 and the concave portion 58 c of the shield member 58 on the opposing surface 11 (see FIGS. 9 and 12 ). The so-called concave portion 80 and the concave portion 58c refer to the shapes of the concave portion 80 and the concave portion 58c. The convex portion 11a of the tray 1 faces the concave portion 80 and the concave portion 58c in a non-contact manner. In the present embodiment, the convex portion 11a is also a curved surface that imitates the concave portion Rp of the work W. As shown in FIG. 5(B), the convex portion 11 a is formed along an arc shape connecting the centers of the pair of inclined surfaces 12 in plan view. The opposing surface 11 of the tray 1 sandwiches the convex portion 11 a, the inner peripheral surface 13 side is a low-level flat surface close to the rotating platform 31, and the outer peripheral surface 14 side is a high-level flat surface away from the rotating platform 31.

The material of the tray 1 is preferably a material with high thermal conductivity, for example, metal. In the present embodiment, the material of the tray 1 is stainless steel (Stainless Steel, SUS). In addition, the material of the tray 1 may be, for example, ceramics or resin with good thermal conductivity, or a composite material of these.

[Vacuum Processing Apparatus] As shown in FIGS. 1 to 3, the vacuum processing apparatus 100 includes a chamber 20, a conveying section 30, a film forming section 40A, a film forming section 40B, a film forming section 40C, a film processing section 50A, and film processing Unit 50B, load lock unit 60, and control device 70.

[Chamber] The chamber 20 is a container in which the inside can be evacuated. That is, the vacuum chamber 21 is formed inside the chamber 20. The vacuum chamber 21 is a cylindrical sealed space surrounded by a top plate 20 a, an inner bottom surface 20 b, and an inner peripheral surface 20 c inside the chamber 20. The vacuum chamber 21 has airtightness and can be set to vacuum by depressurization. In addition, the ceiling 20a of the chamber 20 is configured to be openable and closable. That is, the chamber 20 has a separate structure.

The reaction gas G is introduced into a predetermined area inside the vacuum chamber 21. The reaction gas G includes a sputtering gas G1 for film formation and a processing gas G2 for film processing (see FIG. 3 ). In the following description, when the sputtering gas G1 and the processing gas G2 are not distinguished, they are sometimes referred to as reaction gas G. The sputtering gas G1 is used to cause the generated ions to collide with the target 41A, the target 41B, and the target 41C using the plasma generated by applying electric power, thereby accumulating materials of the target 41A, the target 41B, and the target 41C The reaction gas on the surface of the workpiece W. For example, an inert gas such as argon gas can be used as the sputtering gas G1.

The processing gas G2 is a reaction gas G for forming a compound film by using the plasma generated by inductive coupling to permeate the generated active species into the film deposited on the surface of the workpiece W. Hereinafter, such surface treatment using plasma, that is, a treatment without using the target 41A, the target 41B, and the target 41C may be referred to as reverse sputtering. The processing gas G2 can be appropriately changed according to the purpose of the processing. For example, when performing nitrogen oxidation of the film, a mixed gas of oxygen O2 and nitrogen N2 is used.

As shown in FIG. 3, the chamber 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for ensuring the gas flow between the vacuum chamber 21 and the outside to exhaust the air E. The exhaust port 22 is formed at the bottom of the chamber 20, for example. An exhaust section 23 is connected to the exhaust port 22. The exhaust unit 23 has piping, pumps, valves, and the like not shown. The exhaust processing of the exhaust unit 23 decompresses the inside of the vacuum chamber 21.

The inlet 24 is an opening for introducing the sputtering gas G1 to each of the film forming portion 40A, the film forming portion 40B, and the film forming portion 40C. The inlet 24 is provided in the upper part of the chamber 20, for example. A gas supply unit 25 is connected to the inlet 24. In addition to piping, the gas supply unit 25 includes a gas supply source of a reaction gas G (not shown), a pump, a valve, and the like. The gas supply part 25 introduces the sputtering gas G1 from the inlet 24 into the vacuum chamber 21. In addition, as will be described later, an opening 21 a into which the film processing section 50A and the film processing section 50B are inserted is provided in the upper portion of the chamber 20.

[Transporting Unit] The transporting unit 30 is a device that circulates and transports the workpiece W with a circumferential transport path T centering on the rotation axis of the rotary table 31. The cyclic conveyance refers to repeatedly moving the workpiece W around the circular trajectory. The transport path T is a trajectory that moves the workpiece W or the tray 1 described later by the transport unit 30, and is a ring-shaped ring with a width. The details of the transport unit 30 will be described below.

The transport unit 30 has a rotating platform 31 and a motor 32. The rotary table 31 is provided in the chamber 20 and circulates and conveys the workpiece W. The rotating platform 31 may be formed by spraying aluminum oxide on the surface of a stainless steel plate-shaped member, for example. Hereinafter, when it is abbreviated as "circumferential direction", it means "the circumferential direction of the rotating platform 31", and when it is abbreviated as "radial direction", it means the "radial direction of the rotating platform 31". In addition, “height” and “thickness” are lengths in the direction parallel to the rotation axis of the rotary table 31. The motor 32 is a driving source that provides a driving force to the rotating platform 31 and rotates the rotating platform 31 in a horizontal plane.

As shown in the plan view of FIG. 6, the rotating platform 31 has a mounting portion 33. The mounting section 33 is an area where the tray 1 transported by the transport section 30 is mounted. The mounting portion 33 is provided on the surface of the rotating platform 31. The surface of the rotating platform 31 is a top surface which is a surface facing upward when the rotating platform 31 is in the horizontal direction. The mounting portion 33 is formed by padding a pad 33 a to be described later on the rotating platform 31, and is a substantially annular recessed region concentric with the rotation center of the rotating platform 31. As shown in the plan view of FIG. 7, each tray 1 is arranged in the mounting portion 33 so that the respective inclined surfaces 12 are in contact with each other, and thus, the pads are formed in a ring shape in plan view. Thus, the plurality of trays 1 are mounted at equidistant positions on the circumference. The inclined surface 12 of the tray 1 follows the radius of the rotating platform 31. Thus, in this embodiment, six trays 1 can be placed on the mounting portion 33 at 60° intervals.

By mounting the plurality of trays 1 on the mounting portion 33 of the rotating platform 31, the facing surfaces 11 of the plurality of trays 1 have portions that are continuous along the circumference of the trajectory and become the same plane. Here, the opposing surfaces 11 of the plurality of trays 1 become the same plane, which means that the corresponding portions in the opposing surfaces 11 of the trays 1 have substantially the same height. Furthermore, in this embodiment, the convex portions 11 a of the six trays 1 are formed as convex portions that are continuous on the circumference. That is, as described above, the convex portion 11a is formed along an arc shape (see FIG. 5(B)), and therefore, a plurality of circular arc-shaped convex portions are formed by combining the plurality of arc portions 11a continuously . In addition, as the tray 1, as will be described later, a tray that does not have the convex portion 11 a (see FIG. 20) may be applied. In this case, however, the opposing surfaces of the trays 1 form a flat surface. However, a slight groove may be generated at the boundary of each tray 1. In addition, the edge portion on the inner peripheral side of the mounting portion 33 has a hexagonal shape that is in contact with the inner peripheral surfaces 13 of the plurality of trays 1. The outer peripheral edge of the mounting portion 33 has a polygonal shape that is in contact with the outer peripheral surfaces 14 of the plurality of trays 1.

More specifically, the mounting portion 33 includes the surface of the rotating platform 31 and the edges of the plurality of pads 33a attached to the surface. The shim plate 33a is a polygonal plate, and is laid on the surface of the rotary table 31 in a ring shape to form a level difference with the surface of the rotary table 31, thereby forming a recess into which the tray 1 is fitted. The height of the surface of the pad 33a is set on the same plane as the tray 1 to be embedded.

The term “coplanar with the tray 1” as used herein means that the height of each pad 33a is substantially the same as the height of the portion of the tray 1 that is in contact with the pad. Therefore, when there is a level difference in the edge of the tray 1, the height of the pad 33a which is in contact with the edge of the tray 1 is equal to the height of the edge. However, a slight groove may be formed at the boundary between each tray 1 and each pad 33a. In the present embodiment, as described above, the tray 1 has the convex portion 11a, and the outer peripheral surface 14 side is thicker than the inner peripheral surface 13 side. Therefore, when the tray 1 is mounted on the mounting portion 33, the outer peripheral surface 14 side is higher than the inner peripheral surface 13 side. Correspondingly, the pad 33a on the outer peripheral surface 14 side is formed to be thicker than the pad 33a on the inner peripheral surface 13 side so as to be flush with the tray 1. In addition, when using the tray 1 which does not have the convex part 11a as demonstrated using FIG. 20, the opposing surface 11 of each tray 1 and the upper surface of each pad 33a form a plane.

Furthermore, the mounting portion 33 has a restriction portion 33b. The restricting portion 33b restricts the position of the tray 1. The restricting portion 33b of the present embodiment restricts the movement of the tray 1 in the direction along the transport path T. More specifically, the restricting portion 33b is in contact with the restricting surface 14a of the tray 1 and is an edge portion in a direction crossing the transport path T. The restricting portion 33b restricts the contact with the restricting surface 14a so as not to shift the position of the tray 1 in the circumferential direction.

In this embodiment, as shown in FIGS. 5(C) and 7, three workpieces W are placed on each pallet 1. Therefore, a total of 18 workpieces W can be processed. The rotary table 31 circulates and transports the tray 1 on which the work W is mounted and repeatedly passes through positions facing the film forming section 40A, the film forming section 40B, the film forming section 40C, the film processing section 50A, and the film processing section 50B.

In addition, the workpiece W may be placed directly on the opposing surface 11 of the tray 1 or may be placed indirectly via an adhesive sheet or the like. The number of workpieces W placed on each pallet 1 is not limited to this. For each pallet 1, a single workpiece W or a plurality of workpieces W may be placed.

Furthermore, as shown in FIG. 6, an opening 31 a and a cam hole 31 b are formed in the rotating platform 31. The opening 31a is a through-hole provided in the rotating platform 31 at a circumferentially equidistant position on which each tray 1 is placed. The cam hole 31b is a substantially conical recessed portion provided at a circumferentially equidistant position of the bottom surface of the rotary table 31 (see FIG. 13).

[Film-forming part] The film-forming part 40A, the film-forming part 40B, and the film-forming part 40C are provided at positions facing the workpiece W circulated and transported on the transport path T, and the film-forming material is accumulated on the workpiece W by sputtering To form the processing section of the film. Hereinafter, the description will be made in the form of the film forming part 40 without distinguishing the plurality of film forming parts 40A, the film forming part 40B, and the film forming part 40C. As shown in FIG. 3, the film forming section 40 has a sputtering source 4, a power supply section 6, and a shield member 8.

(Sputtering Source) The sputtering source 4 is a supply source of a film-forming material that deposits a film-forming material on the workpiece W by sputtering to form a film. As shown in FIGS. 2 and 3, the sputtering source 4 includes a target 41A, a target 41B, a target 41C, a backing plate 42 and an electrode 43. The target 41A, the target 41B, and the target 41C are formed of a film-forming material deposited on the workpiece W to form a film, and are disposed at positions facing and separated from the transport path T.

In the present embodiment, the three targets 41A, 41B, and 41C are provided at positions aligned on the apex of the triangle in plan view. The target 41A, the target 41B, and the target 41C are arranged in this order from the vicinity of the rotation center of the rotating platform 31 toward the outer periphery. Hereinafter, the target 41 will be described without distinguishing the target 41A, the target 41B, and the target 41C. The surface of the target 41 is spaced from and faces the workpiece W moved by the conveyance unit 30.

In addition, the area where the film-forming material can be attached by the three targets 41A, 41B, and 41C is larger than the size of the tray 1 in the radial direction. As described above, corresponding to the area where the film is formed by the film-forming portion 40, the annular area along the transport path T is referred to as the film-forming area F (indicated by the dotted line in FIG. 2 ). The width of the film formation area F in the radial direction is longer than the width of the tray 1 in the radial direction. In the present embodiment, the three targets 41A, 41B, and 41C are arranged so that the film-forming material can be attached to the entire width of the film-forming region F in the radial direction without gaps.

As the film-forming material, for example, silicon, niobium, etc. are used. However, if the film is formed by sputtering, various materials can be applied. In addition, the target 41 has a cylindrical shape, for example. However, other shapes such as a long cylindrical shape and a rectangular column shape are also possible.

The back plate 42 is a member that holds the target 41A, the target 41B, and the target 41C individually. The electrode 43 is a conductive member that individually applies power to each of the target 41A, the target 41B, and the target 41C from outside the chamber 20. The electric power applied to each of the target 41A, the target 41B, and the target 41C can be changed individually. In addition, the sputtering source 4 is appropriately provided with a magnet, a cooling mechanism, etc. as necessary.

(Power supply unit) The power supply unit 6 is a component that applies power to the target 41. By applying electric power to the target 41 using the power supply unit 6, plasmaized sputtering gas G1 is generated. In addition, the ions generated by the plasma collide with the target 41, so that the film-forming material impinged from the target 41 can be deposited on the workpiece W. The electric power applied to each of the target 41A, the target 41B, and the target 41C can be changed individually. In the present embodiment, the power supply unit 6 is, for example, a direct current (DC) power supply that applies a high voltage. In addition, in the case of an apparatus that performs high-frequency sputtering, a radio frequency (Radio Frequency, RF) power supply may also be used. The rotating platform 31 and the grounded chamber 20 have the same potential, and a high voltage is applied to the target 41 side to generate a potential difference.

(Shielding member) As shown in FIGS. 3 and 8, the shielding member 8 is a member facing the workpiece W placed on the pallet 1 with a space therebetween. The shield member 8 of the present embodiment has an opening 81 on the side through which the workpiece W passes, and forms a film forming chamber S for film formation by the film forming section 40. That is, the shielding member 8 introduces the sputtering gas G1 and forms a space where plasma is generated, thereby suppressing the leakage of the sputtering gas G1 and the film-forming material into the chamber 20.

The shield member 8 has a top plate portion 82 and a side surface portion 83. The top plate portion 82 is a member that forms the top plate of the film forming chamber S. As shown in FIG. 8, the top plate portion 82 is a substantially fan-shaped plate-shaped body disposed parallel to the plane of the rotating platform 31. In the top plate portion 82, target holes 82a having the same size and shape as the target 41A, the target 41B, and the target 41C are formed at positions corresponding to the respective targets 41A, 41B, and 41C, so that The target 41A, the target 41B, and the target 41C are exposed in the film forming chamber S. The top plate portion 82 is attached to the top plate 20a of the chamber 20 so that the target 41A, the target 41B, and the target 41C are exposed from the target hole 82a.

The side portion 83 is a member that forms a side surface of the peripheral edge of the film forming chamber S. The side portion 83 has an outer peripheral wall 83a, an inner peripheral wall 83b, a partition wall 83c, and a partition wall 83d. The outer peripheral wall 83a and the inner peripheral wall 83b are in the shape of a rectangular parallelepiped curved in an arc shape, and are plate-shaped bodies that sag in a direction orthogonal to the plane of the rotating platform 31. The upper edge of the outer peripheral wall 83a is attached to the outer edge of the top plate portion 82. The upper edge of the inner peripheral wall 83b is attached to the inner edge of the top plate portion 82. In addition, inside the shield member 8, the front end of the gas supply part 25 extends to the vicinity of the target 41A, the target 41B, and the target 41C.

The partition wall 83c and the partition wall 83d have a flat rectangular parallelepiped shape, and are plate-shaped bodies hanging down in a direction orthogonal to the plane of the rotating platform 31. The upper edges of the partition wall 83c and the partition wall 83d are attached to a pair of radial edges of the top plate portion 82, respectively. The joint between the top plate portion 82 and the side surface portion 83 is hermetically sealed. In addition, the top plate portion 82 and the side surface portion 83 may be integrally formed, that is, continuously formed using a common material. The shield member 8 forms a film forming chamber S whose upper and peripheral side surfaces are covered by the top plate portion 82 and the side surface portion 83 and open toward the lower portion of the workpiece W.

The shielding member 8 has a substantially fan shape that expands in diameter from the center side in the radial direction of the rotating platform 31 toward the outside in a plan view. The general fan shape mentioned here refers to the shape of the fan surface portion. The opening 81 of the shield member 8 is also substantially fan-shaped. The speed of the workpiece W held on the rotary table 31 passing under the opening 81 is slower toward the center side in the radial direction of the rotary table 31, and is faster toward the outside. Therefore, if the opening 81 is a simple rectangle or square, the time for the workpiece W to pass directly under the opening 81 will differ between the center side and the outer side in the radial direction. By increasing the diameter of the opening 81 from the center side in the radial direction toward the outside, the time for the workpiece W to pass through the opening 81 can be made constant, and the plasma treatment to be described later can be made uniform. However, if the elapsed time difference is such that it does not cause problems in the product, it may be rectangular or square. As the material of the shield member 8, for example, aluminum or stainless steel (SUS) can be used.

As shown in FIGS. 3 and 9, between the lower ends of the partition wall 83 c and the partition wall 83 d and the rotary table 31, an interval D1 through which the workpiece W on the rotary table 31 can pass is formed. That is, the heights of the partition wall 83c and the partition wall 83d are set so that a slight gap occurs between the lower edge of the shield member 8 and the work W. Thereby, the shield member 8 and the surface of the tray 1 along the radial direction of the rotary table 31 are spaced apart and face each other, and the shield member 8 and the surface of the workpiece W along the radial direction of the rotary table 31 are spaced apart and face each other.

More specifically, the shield member 8 has a concave portion 80 along the convex portion Cp of the work W placed on the pallet 1. The along-convex portion Cp refers to the shape of the convex portion Cp. In this embodiment, the concave portion 80 is a curved surface curved along the convex portion Cp. However, there is a space D1 between the concave portion 80 and the convex portion Cp as described above. That is, the lower edges of the partition wall 83c and the partition wall 83d including the concave portion 80 are formed in a shape along the processing target surface Sp of the workpiece W in a non-contact manner. The distance D1 between the processing target surface Sp of the workpiece W and the shield member 8 is preferably 1 mm to 15 mm including the distance between the convex portion Cp and the concave portion 80. The reason for this is to allow the passage of the workpiece W and maintain the pressure of the internal film forming chamber S.

As shown in FIG. 2, by such a shielding member 8, the film forming site M2, the film forming site M4, the film forming site M5, and the film processing site M1 where the film processing is performed on the workpiece W by the sputtering source 4 are performed. The film processing site M3 is divided. The shielding member 8 can suppress the diffusion of the reaction gas G and the film forming material in the film forming site M2, the film forming site M4, and the film forming site M5 into the vacuum chamber 21.

The horizontal ranges of the film forming site M2, the film forming site M4, and the film forming site M5 become regions divided by the shielding members 8. In addition, the workpiece W circulated and conveyed by the rotary table 31 repeatedly passes through the positions of the film forming site M2, the film forming site M4, and the film forming site M5 facing the target 41, whereby the film forming material is deposited on the work W in the form of a film s surface.

The film-forming chamber S delineated by each shielding member 8 at the film-forming site M2, film-forming site M4, and film-forming site M5 is the area where most film-forming is performed, but even the area beyond the film-forming chamber S may come from Since the film forming material of the film chamber S leaks, it is not completely free of film accumulation. That is, in the film forming portion 40, the film forming area F where film formation is performed becomes a region slightly wider than the film forming chamber S drawn by each shield member 8.

Regarding such a film-forming part 40, by using the same film-forming material in a plurality of film-forming parts 40A, 40B, and 40C to form a film simultaneously, the film-forming amount in a certain time can be increased, that is, film-forming rate. In addition, by using different types of film-forming materials in the plurality of film-forming portions 40A, 40B, and 40C to form films simultaneously or sequentially, a film including layers of multiple film-forming materials may also be formed.

[Film Processing Unit] The film processing unit 50A and the film processing unit 50B are processing units that perform film processing on the material deposited on the workpiece W transported by the transport unit 30. The film processing is reverse sputtering without using the target 41. Hereinafter, the film processing unit 50 will be described without distinguishing the film processing unit 50A and the film processing unit 50B. The film processing section 50 has a processing unit 5. A configuration example of the processing unit 5 will be described with reference to the cross-sectional view of FIG. 10, the exploded perspective view of FIG. 11, and the partially enlarged view of FIG.

As shown in FIGS. 10 and 11, the processing unit 5 has a cylindrical portion H, a window member 52, a supply portion 53, an antenna 55, and a shield member 58. The cylindrical portion H is a component that extends in a direction in which the opening Ho at one end faces the transport path T inside the chamber 20. The cylindrical portion H has a cylindrical body 51 and a facing portion h. The opposing portion h is a component having an opening ho and facing the rotating platform 31. Among the members constituting these cylindrical portions H, the cylindrical body 51 will be described first, and the opposing portion h will be described later.

The cylindrical body 51 is a cylinder having a rectangular cross section with rounded corners. The rounded rectangular shape described here is a track shape of track and field. The shape of the racetrack is a shape in which a pair of partial circles are separated and opposed in the opposite direction of the convex side, and the two ends are connected by straight lines parallel to each other. The cylindrical body 51 is made of the same material as the rotating platform 31. The cylindrical body 51 is inserted into the opening 21 a of the top plate 20 a provided in the chamber 20 such that the opening Ho is spaced from the rotating platform 31 side and faces each other. As a result, most of the side walls of the cylindrical body 51 are accommodated in the vacuum chamber 21. The cylindrical body 51 is arranged so that the longitudinal direction thereof is parallel to the radial direction of the rotating platform 31. In addition, it does not need to be strictly parallel, but can also be slightly inclined.

The window member 52 is provided in the cylindrical portion H and divides the gas space R into which the processing gas G2 is introduced into the chamber 20 and the outside. In this embodiment, the window member 52 is provided in the cylindrical body 51 constituting the cylindrical portion H. The gas space R is a space formed between the rotary table 31 and the inside of the cylindrical portion H in the film processing section 50, and the workpiece W circulated and conveyed by the rotary table 31 repeatedly passes by. The window member 52 is a flat plate of a dielectric body such as quartz, which is housed inside the cylindrical body 51 and has a shape substantially similar to the horizontal cross section of the cylindrical body 51. The window member 52 is a rounded rectangular plate having a substantially similar shape to the horizontal cross section of the cylindrical body 51 arranged as described above. That is, the length of the window member 52 in the direction crossing the transport path T is longer than the length in the direction along the transport path T. In addition, the window member 52 may be a dielectric material such as alumina or a semiconductor such as silicon.

A support portion 510 that supports the window member 52 is provided in the cylindrical portion H. In this embodiment, the support portion 510 is provided in the cylindrical body 51 constituting the cylindrical portion H. A sealing member 21b that seals between the gas space R and the outside is provided between the support portion 510 and the window member 52.

A supply port 512 is formed in the support portion 510. The supply port 512 is a hole for supplying the processing gas G2 into the cylindrical body 51. The supply port 512 penetrates into the opening 51a of the lower end of the cylindrical body 51 so that the cross section becomes L-shaped. The supply port 512 is provided on the downstream side and the upstream side of the conveyance path T of the support portion 510. The supply ports 512 are provided at opposite positions.

Furthermore, an outer flange 51b is formed at the end of the cylindrical body 51 on the side opposite to the opening 51a. Between the lower surface of the outer flange 51b and the top surface of the chamber 20, a sealing member 21b spanning the entire circumference is arranged to hermetically seal the opening 21a.

The supply unit 53 is a device that supplies the processing gas G2 to the gas space R. The supply unit 53 includes a supply source of processing gas G2 such as a gas cylinder (not shown), and a piping 53b and a piping 53c connected thereto. Although not shown, the supply unit 53 has an adjustment unit that adjusts the supply amount of the processing gas G2 introduced from the supply port 512. The adjustment unit is a mass flow controller (MFC) that individually adjusts the supply amount of the processing gas G2 per unit time of the supply unit 53. The MFC is a component having a mass flow meter that measures the flow rate of a fluid and a solenoid valve that controls the flow rate.

The antenna 55 is a member that generates inductively coupled plasma for processing the workpiece W passing through the transport path T. The antenna 55 is arranged outside the gas space R and in the vicinity of the window member 52. By applying power to the antenna 55, an electric field induced by the magnetic field formed by the antenna current is generated, and the processing gas G2 in the gas space R is plasmatized. The distribution shape of the generated inductively coupled plasma can be changed according to the shape of the antenna 55. In this embodiment, the antenna 55 forms a circuit with a rounded rectangle when viewed from the plane direction through a conductor. Thus, an inductively coupled plasma having a shape substantially similar to the horizontal cross section of the gas space R in the cylindrical body 51 can be generated.

An RF power source 55a for applying high-frequency power is connected to the antenna 55. A matching box 55b as a matching circuit is connected in series on the output side of the RF power source 55a. A matching device 55b is connected between the RF power source 55a and the antenna 55. The matching device 55b stabilizes the discharge of the plasma by matching the impedance on the input side and the output side.

The opposing portion h has a cooling portion 56 and a dispersion portion 57. As shown in FIG. 11, the cooling portion 56 is a cylindrical member with a rounded rectangle shape whose outer shape is approximately the same as that of the cylindrical body 51, and is provided at a position where its upper surface contacts and coincides with the bottom surface of the cylindrical body 51. . Although not shown, a cavity in which cooling water flows is provided inside the cooling unit 56. A supply port and a drain port connected to a cooler, which is a cooling water circulation device that circulates and supplies cooling water, are connected at the cavity. The cooling unit 56 is cooled and the heating of the cylindrical body 51 and the dispersion unit 57 is suppressed by repeating the following operations using the cooler. The operation is to supply the cooled cooling water from the supply port, circulate in the cavity and Drain outlet.

The dispersing portion 57 is a cylindrical member with a rounded rectangular shape whose outer dimensions are substantially the same as that of the cylindrical body 51 and the cooling portion 56, and is provided at a position where its upper surface contacts and coincides with the bottom surface of the cooling portion 56. The dispersing section 57 is provided with a dispersing plate 57a. The dispersing plate 57a is disposed at a position spaced from the supply port 512 and facing the supply port 512, and disperses the processing gas G2 introduced from the supply port 512 and flows into the gas space R. The width of the annular portion of the dispersing portion 57 in the horizontal direction is larger than that of the cylindrical body 51 and the portion where the dispersing plate 57 a is provided on the inner side.

The processing gas G2 is introduced into the gas space R from the supply section 53 through the supply port 512, and a high-frequency voltage is applied to the antenna 55 from the RF power supply 55a. In this way, the electric field is generated in the gas space R through the window member 52 and the process gas G2 is plasmatized. This generates active species such as electrons, ions, and free radicals.

In addition, a sheet 561 and a sheet 562 are arranged between the cooling portion 56 and the cylindrical body 51 and between the cooling portion 56 and the dispersion portion 57. The sheet 561 and the sheet 562 are thin plate-shaped members that improve the adhesion between the cooling portion 56 and the cylindrical body 51 and the dispersion portion 57 and improve the thermal conductivity. For example, carbon sheets are used.

As shown in FIGS. 3 and 10 to 12, the shield member 58 is a member facing the workpiece W placed on the pallet 1 with a space therebetween. The shield member 58 of the present embodiment is interposed between the opposing portion h and the rotating platform 31 so as not to be in contact with the opposing portion h and the rotating platform 31 and to be fixed relative to the chamber 20. The shield member 58 has a function of closing the plasma and suppressing the diffusion of the processing gas G2 to the film forming portion 40. The shield member 58 is formed with an adjustment hole 58a provided at a position facing the opening Ho and adjusting the plasma treatment range.

In addition, as shown in FIG. 12, the shield member 58 has a concave portion 58 c along the convex portion Cp of the work W placed on the pallet 1. The along-convex portion Cp refers to the shape of the convex portion Cp. In the present embodiment, the concave portion 58c is a curved surface curved along the convex portion Cp. However, there is a gap between the concave portion 58c and the convex portion Cp. That is, the lower end of the shield member 58 including the recess 58c is formed in a shape along the processing target surface Sp of the workpiece W in a non-contact manner. As a result, the surface of the shield member 58 and the workpiece W in the radial direction of the rotary table 31 are spaced apart and face each other. The distance D2 between the processing target surface Sp of the workpiece W and the shield member 58 is preferably 1 mm to 15 mm including the distance between the convex portion Cp and the concave portion 58c. The reason for this is to allow the passage of the workpiece W and maintain the pressure of the internal film forming chamber S. In addition, in the present embodiment, as will be described later, since the interval d is generated between the dispersion portion 57 and the shield member 58, it is preferable that the interval D2 and the interval d do not exceed 15 mm even if they are added together.

More specifically, as shown in FIG. 11, the shield member 58 is an annular plate with a rounded rectangular shape having an outer shape substantially the same as that of the cylindrical body 51, and has a base 581 and a shielding plate 582. The base 581 is a thick flat plate portion that forms the outer shape of the shield member 58. The recess 58c is provided on the base 581. The shielding plate 582 is a flat plate portion formed on the inner edge of the base 581 and thinner than the base 581, and has an adjustment hole 58a formed inside. The adjustment hole 58a has a different size on the outer peripheral side of the rotating platform 31 and the side closer to the center of the rotating platform 31 than the outer periphery (hereinafter, referred to as the inner peripheral side). The frame of the processing area where the workpiece W is subjected to plasma processing, that is, film processing is drawn by the adjustment hole 58a.

Here, if the outer peripheral side and the inner peripheral side of the rotary table 31 are compared, a difference occurs in the speed over a certain distance. That is, when the long-diameter direction is arranged parallel to the radial direction of the rotary table 31 like the cylindrical body 51 of the present embodiment, the outer side of the time when the rotary table 31 passes under the cylindrical body 51 Shorter than the inner periphery.

Therefore, in the present embodiment, the workpiece W is exposed to the plasma for the same time on the inner peripheral side and the outer peripheral side. In order to combine the processing rate, the shielding plate 582 determines the plasma shielding range as described above. That is, the range exposed to the plasma is determined according to the shape of the adjustment hole 58a. It means that the above-mentioned case has the same meaning as the case where the shield member 58 has a shielding plate 582 provided at a position facing the opening Ho and that adjusts the range of plasma processing, and an adjustment hole 58a that has the range of plasma processing. As an example of the shape of the adjustment hole 58a, a sector shape or a triangle shape can be mentioned. In addition, the range of the shielding can be changed by replacing the shielding plates 582 having different central angles of sectors or triangles within a range not larger than the opening Ho.

The shield member 58 preferably contains a conductive material. In addition, materials with low resistance can also be used. Examples of such materials include aluminum, stainless steel, and copper. It may also contain the same material as the rotating platform 31, or it may contain a different material. The shield member 58 may be formed by spraying aluminum oxide on the surface of a stainless steel plate-shaped member, for example. The shield member 58 is plasma-treated in the same manner as the work W and deteriorates due to heat, and therefore needs to be replaced. Therefore, according to the content of the plasma treatment, it can be coated with an anti-etching agent, an antioxidant, or an anti-nitriding agent, thereby reducing the frequency of replacement. In addition, since it is constituted separately from the cylindrical portion H, replacement work is easy.

As shown in FIGS. 3 and 10, the shield member 58 is fixed by the support member 58 b so as to be non-contactly located between the dispersion portion 57 of the opposing portion h and the rotating platform 31. The support member 58 b is a member that supports and fixes the outer side of the shield member 58 in the radial direction from the outer side of the rotating platform 31. The support member 58b is a columnar member, and is erected from the inner bottom surface 20b and extends to a position higher than the surface of the rotating platform 31, and supports the base 581 extending to the outside of the outer edge of the rotating platform 31. That is, the cylindrical portion H is provided on the top plate 20 a that can be opened and closed on one side of the chamber 20 of the separation structure, whereas the rotary table 31 and the shield member 58 are provided on the inner bottom surface 20 b on the other side.

The relationship between the interval D2 between the shield member 58 and the workpiece W and the interval d between the dispersion portion 57 and the shield member 58 will be described. In this embodiment, since the interval d is generated between the dispersing portion 57 and the shield member 58, in order to maintain the pressure of the gas space R, the interval D2 is shortened as much as possible, and it is preferable that even if the interval D2 and the interval d are summed, More than 5 mm, not more than 15 mm. That is, it is preferably set to 5 mm≦D2+d≦15 mm. For example, consider the interval D2 = interval d = about 5 mm.

Furthermore, as shown in FIG. 10, the shield member 58 has a cooling part 583. The cooling unit 583 is a water channel provided inside the shield member 58 and through which cooling water flows. The water channel communicates with a supply port and a drain port connected to a cooler, which is a cooling water circulation device that circulates and supplies cooling water. The shielding member 58 is cooled by repeating the following operation using the cooler. The operation is to supply the cooled cooling water from the supply port, circulate in the water channel, and be discharged from the drain port. The water channel includes piping, for example, passes along the support member 58b and passes through the inner bottom surface 20b in an airtight manner and extends out of the chamber 20.

[Load lock section] The load lock section 60 is for carrying the pallet 1 carrying unprocessed workpieces W into the vacuum chamber 21 from the outside using a conveying device (not shown) while maintaining the vacuum of the vacuum chamber 21. The pallet 1 carrying the processed workpiece W is carried out to the outside of the vacuum chamber 21. A well-known structure can be applied to the load lock portion 60, and therefore its description is omitted.

In addition, as shown in FIG. 13, a lifter 35 is provided in the chamber 20, and the lifter 35 transports the tray 1 between the outside and the rotating platform 31 via the load lock 60. The lifter 35 is raised and lowered between a position where the tray 1 is transferred with the robot arm AM and a position where the tray 1 is raised and lowered with respect to the rotating platform 31 by a drive mechanism (not shown). Therefore, the lifter 35 is provided to be inserted into the opening 31a of the rotating platform 31.

In addition, a positioning pin 36 that determines the stop position of the rotating platform 31 is provided in the chamber 20. The front end of the positioning pin 36 has a conical shape, and moves in a direction in which the front end is inserted into and removed from the cam hole 31b by a drive mechanism (not shown). After rough positioning of the rotating platform 31 is controlled by the motor 32, if the tip of the positioning pin 36 is inserted into the cam hole 31b, the position of each tray 1 of the mounting portion 33 of the rotating platform 31 corresponds to the load lock portion 60 Position aligned.

[Control Device] The control device 70 is a device that controls each part of the vacuum processing apparatus 100. The control device 70 may be constituted by, for example, a dedicated electronic circuit or a computer operating with a predetermined program. That is, the control content related to the introduction and exhaust of the sputtering gas G1 and the processing gas G2 into the vacuum chamber 21, the control of the power supply unit 6, the RF power supply 55a, and the rotation of the rotary table 31 have been programmed. . The control device 70 executes the program by a processing device such as a programmable logic controller (PLC) or a central processing unit (CPU), and can correspond to various plasma processing styles.

If the specific controlled objects are listed, they are as follows. That is, the rotation speed of the motor 32, the initial exhaust pressure of the vacuum processing apparatus 100, the selection of the sputtering source 4, the applied power to the target 41 and the antenna 55, the flow rates, types, and introduction of the sputtering gas G1 and the processing gas G2 Time and exhaust time, film forming and film processing time, etc.

In particular, in the present embodiment, the control device 70 controls the application rate of power to the target 41 of the film formation unit 40 and the supply amount of the sputtering gas G1 from the gas supply unit 25 to control the film formation rate. In addition, the control device 70 controls the application of power to the antenna 55 and the supply amount of the processing gas G2 from the supply unit 53 to control the film processing rate.

[Operation] The operation of the present embodiment as described above will be described. Although not shown, the vacuum processing apparatus 100 uses the robot arm AM to carry in, carry out, and carry out the tray 1 on which the workpiece W is mounted.

As shown in FIG. 13, the plurality of trays 1 are sequentially carried into the chamber 20 via the load lock 60 by the robot arm AM. That is, the rotating platform 31 moves the mounting position of the tray 1 of the mounting portion 33 to the loading position carried in from the load lock portion 60. As the positioning pin 36 rises and the front end is inserted into the cam hole 31b, the mounting position of each tray 1 is positioned below the load lock portion 60.

When the elevator 35 rises, the tray 1 held by the robot arm AM is supported and the robot arm AM is retracted. The elevator 35 descends to mount the tray 1 on the mounting portion 33 of the rotating platform 31. By repeating these operations in sequence, as shown in FIGS. 2 and 3, the pallet 1 on which the work W is mounted is mounted on the rotating platform 31 in a ring shape.

When the tray 1 is mounted as described above, the opposing surface 11 of the tray 1 including the convex portion 11 a is continuous on the circumference and all become the same plane. Furthermore, the surface of the pad 33a and the surface of the tray 1 also become the same plane. Therefore, the distance between the tray 1 and the shield member 8 and the shield member 58 including the convex portion Cp is constant over the entire circumference (see FIGS. 9 and 12 ). In addition, the processing target surface Sp of the workpiece W placed on the pallet 1 is kept closer to the shield member 8 and the shield member 58 at a certain distance, and is closer to the opposing surface 11 of the pallet 1.

The process of forming a film with respect to the workpiece W introduced into the vacuum processing apparatus 100 as described above is performed as follows. In addition, the following operation is an example of performing film formation and film processing from the film forming unit 40 and the film processing unit 50 by operating each of the film forming unit 40 and the film processing unit 50A only. However, the multi-component membrane unit 40 and the membrane processing unit 50 may be operated to increase the processing rate. In addition, an example of film formation and film treatment by the film formation section 40 and the film processing section 50 is a process of forming a silicon oxynitride film. The formation of the silicon oxynitride film is performed by repeating the process of permeating oxygen ions and nitrogen ions while circulating the workpiece W while circulating silicon to the workpiece W at the atomic level.

First, the vacuum chamber 21 is always exhausted and decompressed by the exhaust unit 23. After the vacuum chamber 21 reaches a predetermined pressure, as shown in FIGS. 2 and 3, the rotary table 31 rotates. Thereby, the workpiece W held by the mounting portion 33 moves along the conveyance path T and passes under the film forming portion 40A, the film forming portion 40B, the film forming portion 40C, the film processing portion 50A, and the film processing portion 50B. After the rotary table 31 reaches a predetermined rotation speed, the gas supply unit 25 of the film forming unit 40 supplies the sputtering gas G1 to the periphery of the target 41. At this time, the supply unit 53 of the membrane processing unit 50 also supplies the processing gas G2 to the gas space R.

In the film forming unit 40, the power supply unit 6 applies power to each of the target 41A, the target 41B, and the target 41C. As a result, the sputtering gas G1 is plasmatized. In the sputtering source 4, active species such as ions and radicals generated by plasma collide with the target 41 to eject the particles of the film-forming material. Therefore, on the surface of the workpiece W passing through the film forming section 40, the particles of the film forming material accumulate to form a film each time the passage passes. In the example, a silicon layer is formed.

The power supply unit 6 applies power to each of the target 41A, the target 41B, and the target 41C so that the electric power sequentially increases as the inner peripheral side approaches the outer peripheral side of the rotating platform 31. Therefore, as the amount of film formation per unit time by sputtering increases from the inner peripheral side to the outer peripheral side, the closer the inner coating side to the outer peripheral side, the faster the speed of the rotating platform 31 passes. As a result, the overall film thickness of the workpiece W becomes uniform.

In addition, even if the workpiece W passes through the film formation unit 40 or the film processing unit 50 that is not in operation, the film formation or film processing is not performed, and therefore it is not heated. In the unheated area, the workpiece W emits heat. In addition, the non-operating film forming unit 40 is, for example, a film forming site M4 and a film forming site M5. The membrane processing unit 50 that is not in operation is, for example, the membrane processing unit M3.

On the other hand, the film-formed workpiece W passes through a position facing the cylindrical body 51 in the processing unit 5. As shown in FIGS. 3 and 10, in the processing unit 5, the supply unit 53 supplies oxygen and nitrogen as the processing gas G2 to the cylindrical body 51 through the supply port 512, and applies a high voltage from the RF power source 55 a to the antenna 55 Frequency voltage. By applying a high-frequency voltage, an electric field is applied to the gas space R through the window member 52, thereby generating plasma. Oxygen ions and nitrogen ions generated by the generated plasma collide with the surface of the film-formed workpiece W, thereby permeating into the film material. The shielding plate 582 shields the plasma in the covered portion by substantially covering the outer edge portion of the opening Ho. Therefore, the plasma treatment is performed within the range defined by the adjustment hole 58a.

Even if the applied power applied to the antenna 55 is increased, the support portion 510 is cooled by the cooling portion 56, so the temperature increase is suppressed. In addition, the dispersing portion 57 is also cooled by the cooling portion 56, so that the temperature rise is suppressed. Moreover, the sheet 561 with high thermal conductivity is interposed between the support portion 510 and the cooling portion 56, and the sheet 562 with high thermal conductivity is interposed between the dispersion portion 57 and the cooling portion 56. Thereby, the heat of the support portion 510 and the dispersion portion 57 is efficiently transferred to the cooling portion 56.

Furthermore, due to the collision of oxygen ions and nitrogen ions generated by the plasma, the shield member 58 is also heated, but is separated from the dispersing portion 57 by a distance d (see FIG. 12 ), so the heat is not transferred to the dispersing部57. Even if the shield member 58 is thermally deformed, it is possible to prevent the strain caused by it from being transmitted to the dispersing portion 57. In addition, the shield member 58 itself is also cooled by the cooling unit 583. Thereby, thermal deformation caused by the heating of the shield member 58, the dispersing portion 57, and the supporting portion 510 can be suppressed, so that the deformation or damage of the window member 52 can be prevented.

During the film-forming process as described above, the rotary table 31 continues to rotate and continuously circulates and transports the pallet 1 on which the work W is mounted. As described above, the work W is circulated to repeat the film formation and film processing, thereby forming a film of silicon oxynitride on the surface of the work W as a compound film.

Even if the rotating platform 31 rotates, the opposing surface 11 of the tray 1 including the convex portion 11 a is continuous on the circumference and all become the same plane. Therefore, the distance between the pallet 1 and the shield member 8 and the shield member 58 is also kept constant in the portion where the workpiece W is not placed, and there is no large space.

After a predetermined processing time after the silicon oxynitride film has a desired film thickness, the film forming section 40 and the film processing section 50 are stopped. That is, the application of electric power to the target 41 by the power supply unit 6, the supply of the processing gas G2 from the supply port 512, the application of electric power by the RF power supply 55 a, and the like are stopped.

As described above, after the film forming process is completed, the pallet 1 on which the workpiece W is mounted is sequentially positioned on the load lock 60 by the rotation of the rotary table 31 and the positioning pin 36, and is carried out to the outside by the elevator 35 and the robot arm AM .

[Effects and effects] The present embodiment as described above includes: a chamber 20 in which the inside can be set to a vacuum; a rotating platform 31 provided in the chamber 20 to set the rotation axis of the rotating platform 31 The workpiece W is circulated and transported in a circular trajectory set at the center; a plurality of pallets 1 are mounted on the rotary table 31 and the workpiece W is placed; and the processing unit plasmaizes the introduced reaction gas G to pass through the rotary table 31 On the other hand, the transferred workpiece W is subjected to predetermined processing. The processing section has a shield member 8 and a shield member 58 in the radial direction of the rotating platform 31, and the surface of the shield member 8, the shield member 58 and the tray 1 facing the processing section and the load Between the surfaces of the workpiece W placed on the tray 1 facing the processing section, there is a space through which the workpiece W can pass, and the shield member 8, the shielding member 58 and the surface of the tray 1 facing the processing section and placed on The workpiece W of the pallet 1 faces the surface of the processing section. In other words, the shielding member 8 and the shielding member 58 are spaced apart from the surface of the tray 1 facing the processing section, along the radial direction of the rotary table 31, to allow the workpiece W placed on the tray 1 to pass therethrough Configuration. In addition, the surfaces of the plurality of trays 1 facing the processing section have portions that are continuous along the circumferential trajectory and become the same plane.

Therefore, compared with the interval between the workpiece W and the shield member 8 and the shield member 58, the interval between the tray 1 and the shield member 8 and the shield member 58 can be prevented from being extremely enlarged, and the leakage of the reaction gas G from the processing section can be suppressed. In addition, in the case of including a processing section using different reaction gases G, mutual contamination caused by leakage of the reaction gases can be prevented. Furthermore, by preparing a pallet 1 of a shape corresponding to a workpiece W of various shapes in advance, only the pallet 1 can be replaced to cope with changes in the shape of the workpiece W.

In addition, by adjusting the distance between the shield member 8 and the shield member 58 and the work W, the leakage of the reaction gas G can be suppressed. Since the shield member 58 is separated from the cylindrical portion H, the distance from the workpiece W can be adjusted easily and accurately.

The workpiece W has a convex portion Cp on the surface facing the processing portion, and the shield member 8 and the shield member 58 have a concave portion 80 and a concave portion 58c along the convex portion Cp of the workpiece W. Therefore, even if the workpiece W has the convex portion Cp, it is possible to prevent the gap between the workpiece W and the shield member 8 and the shield member 58 from expanding, so that the leakage of the reaction gas G can be suppressed.

The tray 1 has a convex portion 11 a along the shield member 8, the concave portion 80 of the shield member 58, and the concave portion 58 c on the surface facing the processing portion. Therefore, in the portion of the pallet 1 where the workpiece W is not placed, the interval between the pallet 1 and the shield member 8 and the shield member 58 can be prevented from being extremely widened, and the leakage of the reaction gas G can be further suppressed.

The rotating platform 31 has a restricting portion 33b that restricts the position of the tray 1. Therefore, it is possible to prevent the deflection of the pallet 1 caused by the rotation of the rotary table 31, thereby stabilizing the position of the workpiece W.

[Modification] (1) The shape, type, and material of the work W are not limited to those specified. For example, the workpiece W may be as follows: As shown in FIG. 21(A), FIG. 21(B), and FIG. 21(C), the processing target surface Sp includes a plurality of planes with different angles, thereby connecting different planes to each other The part of which forms the convex portion Cp. In addition, depending on the thickness of the workpiece W, the processing target surface Sp of the workpiece W may protrude above the opposing surface 11 of the tray 1. In this case, the shield member 8 and the shield member 58 are provided with a recess 80 and a recess 58 c that avoid the protruding portion of the work W. However, the convex portion Cp may not be present on the processing target surface Sp of the workpiece W. As a material of the workpiece W, those containing conductive materials such as metal and carbon; those containing insulators such as glass or rubber; and those containing semiconductors such as silicon can be used. The shield member 8, the concave portion 80 and the concave portion 58 c of the shield member 58 only need to be shaped along the convex portion Cp of the work W, and therefore can be formed into various shapes according to the shape of the work W. In addition, the convex portion 11 a of the tray 1 only needs to have a shape along the concave portion 80 and the concave portion 58 c of the shield member 8 and the shield member 58. Therefore, various shapes can be used according to the shapes of the concave portion 80 and the concave portion 58 c.

Furthermore, regarding the surface to be formed of the workpiece W, in the above-described embodiment, the film is formed on the surface having the convex portion Cp, but it may be formed on the surface on the opposite side. For example, a film can be formed on the surface having the recess Rp. In this case, the shield member 8 and the shield member 58 only need to have convex portions along the concave portion Rp. In addition, the tray 1 only needs to have a concave portion along the concave portion Rp and along the convex portions of the shield member 8 and the shield member 58.

For example, as shown in FIG. 14(A), like the workpiece W having a circular cross section, the entire processing target surface Sp of the workpiece W may be the convex portion Cp. In this case, the concave portion 80 and the concave portion 58c of the shield member 8 and the shield member 58 are also formed in an arc shape, and the convex portion 11a of the tray 1 is also formed in an arc shape in cross section. In addition, as shown in FIG. 14(B), since the convex portions Cp are provided at both edges, the entire processing target surface Sp can be swelled and approached toward the processing portion side. In this case, the shield member 8, the concave portion 80 of the shield member 58, the concave portion 58 c, and the convex portion 11 a of the tray 1 are also formed in a shape along the processing target surface Sp.

(2) As shown in FIG. 15, an adjustment portion 85 may be provided on the shield member 8. The adjustment unit 85 is a member that adjusts the film thickness distribution of the film to be formed. The adjustment unit 85 corrects the film thickness distribution by forming a region that shields the sputter particles of the film-forming material in a part of the film-forming region F. That is, a portion to be shielded so as not to cause excessive sputtered particles to adhere to a portion where a large amount of sputtered particles easily adhere and the film becomes thick. That is, the adjustment portion 85 is a shielding portion that shields the film forming material.

For example, in FIG. 15, the lower end of the partition wall 83 d of the shield member 8 is constituted by a surface protruding in the direction of the inside of the film forming chamber S to constitute the adjustment portion 85. Due to the convex portion Cp of the workpiece W, the processing target surface Sp is close to the target 41, thereby forming a mountain protruding toward the film forming chamber S at a portion where the film thickness distribution becomes thick. Thereby, the sputtered particles are shielded by the portion of the mountain to prevent excessive adhesion to the workpiece W, so the film thickness distribution can be made uniform.

(3) The configuration may be such that the shield member 8 is not attached to the top plate 20a of the chamber 20, but is supported by the inner bottom surface or the inner circumferential surface of the chamber 20 by pillars or the like. Thereby, the shield member 8 can be separated from the top plate 20a which can be opened and closed, and the distance between the shield member 8 and the workpiece W can be adjusted easily and accurately.

(4) As shown in FIG. 16, the recess 80 can be provided in the detachable member 86 that can be detachably attached to the shield member 8. For example, the detachable member 86 is detachably provided on the partition wall 83 c and the partition wall 83 d of the shield member 8. The detachable member 86 has the same shape as the partition wall 83d, and a recess 80a is formed at the lower edge thereof. The detachable member 86 is formed with a positioning portion L for positioning. The positioning portion L of this embodiment has a hook shape formed by bending claws. The partition wall 83c and the partition wall 83d are formed with a plurality of substantially square relief holes Na, thereby achieving weight reduction. A locking portion Nb for locking the positioning portion L is formed on the lower edge of the lightening hole Na. The locking portion Nb of this embodiment is a cutout into which the hook-shaped positioning portion L is fitted.

In addition, since the film-forming material during sputtering in the film-forming chamber S is attached to the detachable member 86, the detachable member 86 also functions as an anti-adhesion plate that prevents the film from being formed on the shield member 8. The film can be removed by detaching the detachable member 86 for cleaning or replacement. Therefore, it is possible to save time and effort for cleaning or replacing the shielding member 8 which is a heavy object.

In addition, in the above-described embodiment, the shield member 8 is configured to include a wall that surrounds the processing portion over the entire circumference. However, as long as the shielding member 8 is in the radial direction of the rotating platform 31, the shielding member 8 and the surface of the tray 1 facing the processing section and the surface of the workpiece W placed on the tray 1 facing the processing section are open The interval between the workpiece W and the shield member 8 and the surface of the tray 1 facing the processing section and the surface of the workpiece W placed on the tray 1 facing the processing section may be opposed. That is, the shield member 8 only needs to have a function of preventing leakage of the reaction gas G. Therefore, for example, the shield member 8 only needs to have at least the partition wall 83c and the partition wall 83d.

(5) As shown in FIG. 17, the pallet 1 may be provided with an insertion portion 11 b into which the workpiece W is inserted. The fitting portion 11b is a recessed portion into which part or all of the workpiece W in the thickness direction is buried. As a result, the difference in height between the processing target surface Sp of the workpiece W and the surface of the tray 1 can be reduced, and the gap between the surface of the tray 1 other than the workpiece W and the shield member 8 and the shield member 58 can be prevented from expanding, which can further suppress the reaction gas. leakage.

In this case, it is preferable to set the depth of the fitting portion 11 b so that the surface of the pallet 1 and the processing target surface Sp of the workpiece W become the same plane. As a configuration used for this, for example, as shown in FIG. 18, the depth of the fitting portion 11 b may be substantially the same as the thickness of the workpiece W. In addition, as shown in FIG. 19, the spacer 11c may be used to make the surface of the tray 1 and the processing target surface Sp of the workpiece W on the same plane. For example, the surface of the pallet 1 and the processing target surface Sp of the workpiece W may be placed by combining the bottom surface of the insertion portion 11b with a lower flat surface close to the rotary table 31 and placing the spacer 11c therebetween. same plane. In this case, the thickness of the workpiece W is equal, and in combination with it, the thickness of the spacer 11c may be partially different (α in the figure). The thickness of the workpiece W is partially different. To compensate for this, spacers 11c of equal thickness may be interposed so that the surface of the tray 1 and the processing target surface Sp of the workpiece W become the same plane (β in the figure).

(6) The number of pallets 1 and workpieces W simultaneously transported by rotating the platform 31 may be at least one, and is not limited to the number exemplified in the above embodiment. That is, it may be an embodiment in which one pallet 1 and one workpiece W are circulated and transported, or an embodiment in which two or more pallets 1 and two or more workpieces W are circulated and transported. Even if the tray 1 is mounted only on a part of the mounting portion 33, the displacement of the tray 1 can be prevented by the restricting portion 33b.

(7) As shown in FIG. 20, the facing surfaces 11 of the plurality of trays 1 need only be formed to be continuous along the circumference of the trajectory and become the same plane, and may not necessarily have the convex portion 11 a. For example, the opposing surface 11 of the tray 1 may be a flat surface. In addition, the shield member 8 and the shield member 58 may not have the recess 80 and the recess 58c. That is, if the opposing surfaces 11 of the plurality of trays 1 are formed to be continuous along the circumferential trajectory and become the same plane, it is possible to prevent the gap between the tray 1 and the shielding member 8 and the shielding member 58 from being extremely widened in a place where the workpiece W does not exist, thereby The leakage of the reaction gas G can be suppressed.

(8) The mounting portion 33 may also be formed by a recessed portion formed directly on the rotating platform 31. In addition, the tray 1 only needs to be laid on the rotating platform 31, and therefore, the mounting portion 33 does not necessarily need to be a recessed area. For example, when the tray 1 is longer than the shield member 8 and the shield member 58 in the radial direction, the surface of the rotating platform 31 may be flat. In addition, as a structure for holding the tray 1, there may be a groove, a hole, a protrusion, a jig, a holder, a mechanical chuck (mechanical chuck), an adhesive chuck, or the like.

(9) As shown in FIGS. 22(A) and 22(B), on the surface of the rotating platform 31, the concave portion 80 of the shield member 8, the shield member 58, and the convex portion 31c of the concave portion 58c may have a circumferential shape The trajectory is continuous and becomes part of the same plane. In this case, as shown in FIG. 22(A), it is also preferable to set the surface of the rotary table 31 and the facing surface 11 of the tray 1 to be the same plane. That is, it may be configured such that a mounting portion 33 is provided on the rotating platform 31, and when the mounting portion 33 is mounted on the tray 1 having the convex portion 11a on the opposing surface 11, the surface of the rotating platform 31 and the tray 1 have circumferentially The trajectory is continuous and becomes part of the same plane. In this case, the gap between the tray 1 and the shield member 8 and the shield member 58 can be prevented from being extremely enlarged in the place where the workpiece W does not exist, and the surface of the rotary platform 31 and the shield member can also be prevented in the place where the tray 1 does not exist 8. The interval of the shield member 58 is extremely enlarged, so that the leakage of the reaction gas G can be suppressed.

In addition, as described above, in the case where the convex portion 31c is provided on the surface of the rotary table 31, as shown in FIG.部31d. In this case, if the workpiece W having the convex portion Cp is fitted into the fitting portion 31d, the surface of the rotary table 31 and the surface of the workpiece W become the same plane along the circumference. Even if it is comprised as mentioned above, in the part where the workpiece W does not exist, the interval between the rotating platform 31 and the shield member 8 and the shield member 58 can be prevented from being extremely enlarged, and the leakage of the reaction gas G can be suppressed.

(10) As for the film-forming material, various materials that can be formed by sputtering can be applied. For example, tantalum, titanium, aluminum, etc. can be applied. As for the material used to form the compound, various materials can also be used.

(11) The number of targets in the film forming section is not limited to three. The target material may be set to one, two or more than four. By increasing the number of targets and adjusting the applied power, finer film thickness control can be performed. In addition, the film forming portion may be one, two, or four or more. The number of film forming parts can be increased to increase the film forming rate. According to this, the number of membrane processing sections can also be increased to increase the membrane processing rate.

(12) Only one of the film forming unit 40 and the film processing unit 50 may be operated. In addition, as the processing unit, at least one of the film forming unit 40 and the film processing unit 50 is sufficient. Furthermore, the processing section is not limited to film formation and film processing with respect to film formation. It can be applied to a vacuum processing apparatus that uses an active species generated by plasma to process a processing object. For example, it may be configured as a vacuum processing apparatus in which a plasma is generated in a gas space in a processing unit to perform surface modification such as etching, ashing, and cleaning. In this case, for example, an inert gas such as argon gas may be used as the processing gas.

(13) The shapes of the cylindrical body, the window member, and the antenna are not limited to the shapes exemplified in the above embodiment. The horizontal section can be square, round, oval. In the above-described embodiment, the cylindrical portion H and the shield member 58 are separate structures, but the structure in which the cylindrical portion H and the shield member 58 are integrated is also included in the present invention. Furthermore, the film forming unit 40 and the film processing unit 50 are not limited to the above-described embodiment. For example, the plasma generated in the film processing section 50 is not limited to inductively coupled plasma.

(14) The vacuum processing apparatus having the mounting portion 33 on which the tray 1 is mounted on the rotating platform 31, and the tray 1 as described above is also an embodiment of the present invention.

(15) In the above embodiment, the following is described, but it is not limited to this. The person is provided with a mounting portion 33 on the upper surface of the horizontally arranged rotating platform 31 to make the rotating platform 31 rotates in a horizontal plane, and a film portion 40 and a film processing portion 50 are arranged above the rotating platform 31. For example, the configuration of the rotating platform 31 is not limited to horizontal, and may be a vertical configuration or an inclined configuration. In addition, the mounting portion 33 only needs to be provided on at least one surface of the rotary table 31, and may also be provided on the lower surface of the horizontally arranged rotary table 31. Furthermore, it may be provided on both sides of the rotary table 31. In addition, the film forming section 40 and the film processing section 50 may be disposed so as to face the surface of the rotary table 31 where the mounting section 33 is provided. Therefore, for example, when the mounting portion 33 is provided on the lower surface of the rotating platform 31 arranged horizontally, as long as the film forming portion 40 and the film processing portion 50 are disposed on the lower side of the rotating platform 31 opposite to the rotating platform 31 Location. In addition, when the rotating platform 31 is arranged vertically or obliquely, or the mounting portion 33 is provided below the rotating platform 31, it is preferable to provide a holding mechanism such as a suction cup for detachably holding the tray 1 on the mounting portion 33 Institutions, etc. In addition, a holding mechanism such as a chuck structure for detachably holding the work, or a holding mechanism for holding the work by a claw member that can be held by embedding may also be provided on the tray 1.

A modified example will be described with reference to FIGS. 23 to 29 (A) and 29 (B), in which the film forming unit 40 and the film processing unit 50 are arranged below the rotating platform 31 and the rotating platform 31 opposite positions. 23 is a bottom view of a rotary table 31 of a modified example, and FIG. 24 is a CC line cross section of a vacuum processing apparatus in which the rotary table 31 of the modified example is assembled and the film forming section 40 and the film processing section 50 are arranged below the rotary table 31. Figure. FIG. 25 is a perspective view showing a tray 1 of a modification. FIGS. 26(A), 26(B), and 26(C) are explanatory views showing the assembly of the workpiece W to the pallet 1 and the assembly of the pallet 1 to the rotary table 31. FIG. 27 is an exploded perspective view showing a tray 1 of another modification. FIG. 28 is an exploded perspective view showing a tray 1 of still another modification, FIG. 29(A) is a perspective view, and FIG. 29(B) is a cross-sectional view.

(Film forming unit and film processing unit) As shown in FIG. 24, the film forming unit 40 and the film processing unit 50 are disposed below the rotating platform 31. The film forming unit 40 and the film processing unit 50 have the same configuration as the above-described embodiment, but are provided by being turned upside down. Therefore, the opening 81 of the shield member 8 and the adjustment hole 58 a of the shield member 58 (see FIGS. 10 and 11) face upward and face the lower side of the rotating platform 31.

The shield member 8 is attached so that the top plate portion 82 is in contact with the inner bottom surface 20b of the chamber 20. The top plate portion 82 described here becomes the lower side in the modification. The shielding member 58 is fixed by the support member 58b so as to be non-contact between the dispersing portion 57 of the opposing portion h and the rotating platform 31, as in the above-described embodiment.

(Tray) As shown in the perspective view of FIG. 25, the tray 1 is a substantially fan-shaped plate-shaped body. In addition, in FIG. 25, the side of the facing surface 11 facing the film forming section 40 and the film processing section 50 is shown as being up. When the tray 1 is mounted on the rotating platform 31, as shown in FIGS. 23, 24, 26 (B), and 26 (C), the facing surface 11 faces downward. Here, the side having the opposing surface 11 of the tray 1 is referred to as the opposing portion X1, and the side opposite to the opposite side is referred to as the supporting portion X2.

The outer shape of the support portion X2 of the tray 1 is substantially the same as the outer shape of the opposing portion X1, but its size is one circle larger than the opposing portion X1. Therefore, the tray 1 has a protruding portion 15 that protrudes outward from the outer periphery of the opposing portion X1 over the entire periphery of the support portion X2 over the entire periphery. In addition, the opposing portion X1 has a convex portion 11 a along the concave portion 80 of the shield member 8 and the concave portion 58 c of the shield member 58.

The tray 1 has a plurality of openings 16 penetrating in the vertical direction. Here, as shown in FIG. 26(A), the supporting portion X2 side of the opening 16 is larger than the opposing portion X1 side. More specifically, the support portion X2 side of the opening 16 becomes an insertion portion 16 a of a size that can put the work W into the tray 1. In addition, the facing portion X1 side of the opening 16 bulges inward to become a holding portion 16 b that can hold the tray 1. The inner periphery of the holding portion 16b is substantially the same shape as the outer shape of the workpiece W, but is smaller than the workpiece W by one circle. Therefore, as shown in FIGS. 23, 24, and 26(B), the workpiece W inserted from the insertion portion 16b The outer periphery of the processing target surface Sp is held.

(Rotating platform) As shown in FIGS. 24 and 26(B) and FIG. 26(C), the rotating platform 31 is provided with an opening 31 a. The opening 31a is a through-hole provided in the rotating platform 31 at a circumferentially equidistant position on which each tray 1 is placed. The opening 31a is substantially the same shape as the outer shape of the facing portion X1 of the tray 1 and is slightly larger than the outer shape of the facing portion X1, so it is formed so that the facing portion X1 fits.

On the upper surface of the rotating platform 31, a mounting surface 31e for mounting the protruding portion 15 of the tray 1 is provided around the opening 31a, and as in the above-described embodiment, a restricting portion 33b is provided on the pad 33a.

Further, the lower surface of the rotating platform 31 is formed along the shield member 8, the concave portion 80 of the shield member 58, and the convex portion 31 c of the concave portion 58 c have portions that are continuous along the circumferential trajectory and become the same plane. As described above, the shape of the portion having the same plane is the same as that of the above-mentioned embodiment except that it is turned upside down.

In addition, in a state where the workpiece W is placed on the pallet 1, the lower end of the opening 16 has an opening depth of several mm or less. Even if there is a portion having a step difference of several mm or less as described above, it is possible to achieve suppression of the leakage of the reaction gas from the processing section as an object of the present invention. Therefore, in the present invention, a slight step difference of this degree is included in "being on the same plane". That is, the “same plane” of the “surfaces of the plurality of trays facing the processing section having portions that are continuous along the circumferential trajectory and becoming the same plane” need not be accurately continuous surfaces, and may include a slight step difference. Moreover, even if it is a structure like the above-mentioned modification, the opposing surface 11 of the tray 1 and the lower surface of the rotary table 31 can be continuous on the rotation center side along the circumferential trajectory and become the same plane.

(Assembly of pallet) In this modification, as shown in FIG. 26(A), the workpiece W is inserted into the pallet 1 from the insertion portion 16a of the opening 16, and as shown in FIG. 26(B), the processing of the workpiece W The outer periphery of the target surface Sp is held by the holding portion 16b of the opening 16. Therefore, there is no need to provide a complicated mechanism for holding the workpiece W on the pallet 1.

Then, as shown in FIGS. 23, 26 (B), and 26 (C), if the opposing portion X1 of the pallet 1 on which the work W is placed is fitted into the opening 31 a of the rotary table 31, the support portion X2 protrudes The portion 15 is supported by the mounting surface 31e around the opening 31a. In addition, the position of the outer periphery of the protruding portion 15 is regulated by the regulating portion 33b of the pad 33a. As described above, when the tray 1 is mounted on the rotating platform 31, the opposing surface 11 penetrates the opening 31 a of the rotating platform 31 and is exposed to the lower surface side of the rotating platform 31. Therefore, there is no need to provide a complicated holding mechanism for detachably holding the tray 1 on the rotating platform 31. Furthermore, if the processing target surface of the work W faces downward, it is possible to prevent waste, dust, film-forming materials, etc. attached to the device from falling down and adhering to the work W due to gravity.

In addition, as an example of holding the workpiece W so as not to fall from the tray 1 even if the processing target surface Sp of the workpiece W faces downward, an example of using the slide base 11 d and the spacer 11 c will be described as shown in FIG. 27. That is, a groove 11 e parallel to the plane of the tray 1 is formed on the inner wall of the fitting portion 11 b formed on the facing surface 11 of the tray 1. The slide base 11d has a rectangular parallelepiped shape, and a convex portion 11f inserted into the groove 11e is formed on the opposite side surface. The surface of the sliding base 11d on the side facing the side 11 is attached with a spacer c via an adhesive material 11g such as a double-sided adhesive tape. The workpiece W is attached to the surface of the spacer 11c on the side facing the side 11 via the adhesive material 11g. As described above, the convex portion 11f of the slide base 11d on which the work W is mounted is inserted into the groove 11e, thereby assembling the work W together with the slide base 11d and the spacer 11c to the fitting portion 11b. At this time, it is preferable that the processing target surface Sp of the workpiece W and the opposing surface 11 of the pallet 1 become the same plane.

In the above example, the following effects can be obtained. (1) Since the back surface of the workpiece W is supported by the adhesive material 11g, a film can be formed on the entire surface of the workpiece W to be processed. (2) By changing the shape of the spacer 11c, it is possible to cope with the workpiece W having a different shape. (3) Compared with the case where the adhesive material 11g is provided on the entire surface of the facing surface 11 of the tray 1, the area of the adhesive material 11g can be set to the minimum required, so that the escape from the adhesive material 11g can be reduced The amount of outgas can shorten the exhaust time before film formation. (4) Since the workpiece W is bonded to the spacer 11c in a vacuum, bonding can be performed in a chamber smaller than the tray 1, and the exhaust time can be shortened.

In addition, the slide base 11d may be omitted and the tray 1 and the spacer 11c may be integrated. In this case, the effects of (1) and (3) can also be obtained. In addition, as for the holding means for holding the workpiece W to the spacer 11c, an electrostatic chuck may be used instead of the adhesive material 11g.

In addition, as shown in FIGS. 28, 29 (A), and 29 (B), the tray 1 may be configured to be decomposable into the facing portion X1 and the supporting portion X2. In this case, for example, the workpiece W is sandwiched and fixed between the facing portion X1 and the support portion X2 via the spacer 11c. That is, as shown in FIG. 28, a plurality of mounting holes 18 into which the body portion of the screw 17 is inserted are formed in the opposing portion X1, and a plurality of screw holes 19a into which the body portion of the screw 17 is screwed are formed in the support portion X2. The spacer 11c has a rectangular parallelepiped fixing block 11h on the surface opposite to the mounting surface of the work W. The support portion X2 is provided with a plurality of holes into which the fixing block 11h is inserted, at a position corresponding to the opening 16 of the facing portion X1. By inserting the fixing block 11h into each fitting portion 11b, the spacer 11c can be fixed to the support portion X2. In addition, as described above, an embodiment in which only the spacer 11c is fitted into the fitting portion 11b is also included.

As shown in FIG. 29(A), the workpiece W is placed on the spacer 11c, covers the opposing portion X1, and the screw 17 is inserted into each mounting hole 18 and fastened by the screw 17, whereby the opposing portion X1 and The support portion X2 is fixed. As shown in FIG. 29(B), the workpiece W is sandwiched between the spacer 11 c and the holding portion 16 b, and the processing target surface Sp can be exposed from the opening 16. It is difficult to perform the process of integrally forming the tray 1 in advance, but as long as the facing portion X1 and the supporting portion X2 composed of different individuals are combined, it is easy to manufacture the tray 1.

[Other Embodiments] In the above, the embodiments of the present invention and the modified examples of each part have been described. However, the above-mentioned embodiments or modified examples of each part are presented as an example, and are not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope or gist of the invention and included in the invention described in the claims.

100‧‧‧Vacuum processing device 1‧‧‧Tray 11‧‧‧ Opposite surface 11a‧‧‧Convex part 11b‧‧‧Embedded part 11c‧‧‧Separator 11d‧‧‧Sliding base 11e‧‧‧Slot 11f‧‧ ‧Convex part 11g‧‧‧Adhesive material 11h‧‧‧Fixed block 12‧‧‧Slope 13‧‧‧Inner peripheral surface 14‧‧‧Outer peripheral surface 14a‧‧‧Restriction surface 15‧‧‧Projection 16‧‧‧ Opening 16a‧‧‧Insert portion 16b‧‧‧Retaining portion 17‧‧‧Screw 18‧‧‧Mounting hole 19a‧‧‧Thread hole 20‧‧‧Chamber 20a‧‧‧Top plate 20b‧‧‧Inner bottom surface 20c‧‧ ‧Inner peripheral surface 21‧‧‧Vacuum chamber 21a‧‧‧Opening 21b‧‧‧Seal member 22‧‧‧Exhaust port 23‧‧‧Exhaust part 24‧‧‧Inlet port 25‧‧‧Gas supply part 30‧ ‧‧Transporting part 31‧‧‧Rotating platform 31a‧‧‧Opening 31b‧‧‧Cam hole 31c‧‧‧Convex part 31d‧‧‧Embedding part 31e‧‧‧Mounting surface 32‧‧‧Motor 33‧‧‧ Part 33a‧‧‧Backing plate 33b‧‧‧Limit part 35‧‧‧Lift 36 ‧‧‧ Positioning pin 40, 40A, 40B, 40C ‧‧‧ Film-forming part 4‧‧‧Sputter source 41, 41A, 41B 、41C‧‧‧Target 42‧‧‧Back plate 43‧‧‧Electrode 5‧‧‧Processing unit 50, 50A, 50B ‧‧‧ Film processing part 51‧‧‧Cylinder 51a‧‧‧Opening 51b‧‧ ‧Outer flange 510‧‧‧Support part 512‧‧‧Supply port 52‧‧‧Window member 53‧‧‧Supply part 53b, 53c‧‧‧Piping 55‧‧‧Antenna 55a‧‧‧‧Radio frequency (RF) power supply 55b ‧‧‧ Matcher 56‧‧‧Cooling parts 561, 562‧‧‧ Sheet 57‧‧‧Dispersing part 57a‧‧‧Dispersing plate 58‧‧‧Shielding member 58a‧‧‧Adjustment hole 58b‧‧‧Support member 58c ‧‧‧Concave part 581‧‧‧Base 582‧‧‧Shielding plate 583‧‧‧Cooling part 6‧‧‧Power supply part 60‧‧‧Load lock part 70‧‧‧Control device 8‧‧‧Shielding member 80, 80a‧ ‧‧Concave part 81‧‧‧Opening 82‧‧‧Top plate part 82a‧‧‧Target hole 83‧‧‧Side part 83a‧‧‧Outer peripheral wall 83b‧‧‧Inner peripheral wall 83c, 83d‧‧‧Partition wall 85‧‧ ‧Adjustment part 86‧‧‧Removable component AM‧‧‧Mechanical wall D1, D2, d‧‧‧Interval E‧‧‧Exhaust T‧‧‧Transport path L‧‧‧Positioning part M1, M3‧‧‧ Film Processing site M2, M4, M5 ‧‧‧ Film forming site Na‧‧‧ Relief hole Nb ‧‧‧ Locking part G ‧‧‧ Reaction gas G1 ‧‧‧ Sputtering gas G2 ‧‧‧ Process gas F ‧‧‧ Membrane area H‧‧‧Cylinder Ho‧‧‧Opening h‧‧‧ Opposite part R‧‧‧Gas space S‧‧‧Film forming chamber W‧‧‧Workpiece X1‧‧‧ Opposite part X2‧‧‧Support part Sp ‧‧‧Processing target surface Cp‧‧‧ convex part Rp‧‧‧ concave part

FIG. 1 is a perspective perspective view of a vacuum processing apparatus of an embodiment. 2 is a perspective plan view of the vacuum processing apparatus of the embodiment. Fig. 3 is a cross-sectional view taken along line A-A of Fig. 2. 4(A) is a side view of the work, FIG. 4(B) is a plan view of the work, and FIG. 4(C) is a perspective view of the work. 5(A) is a side view of the tray, FIG. 5(B) is a plan view of the tray, and FIG. 5(C) is a perspective view of the tray. Fig. 6 is a plan view showing a rotating platform on which no tray is placed. 7 is a plan view showing a rotating platform on which a tray is placed. FIG. 8 is a perspective view showing a shield member of a film forming portion. 9 is a partially enlarged cross-sectional view showing the distance between the shield member and the work. Fig. 10 is a sectional view taken along line B-B of Fig. 2. 11 is an exploded perspective view of the processing unit. 12 is a partially enlarged cross-sectional view showing the distance between the shield member and the work. 13 is an explanatory diagram showing an embodiment of carrying in/out of a tray. 14(A) is a cross-sectional view showing another embodiment of the tray, and FIG. 14(B) is a cross-sectional view showing another embodiment of the tray. FIG. 15 is a perspective view showing the adjustment unit. 16 is a perspective view showing a detachable member. Fig. 17 is a perspective view showing a tray having an insertion portion. Fig. 18 is a perspective view showing an embodiment of an embedded portion. FIG. 19 is a perspective view showing an embodiment of the fitting portion and the spacer. 20 is a plan view showing a modified example of the tray and the rotating platform on which the tray is placed. 21(A) is a side view showing a modification of the work, FIG. 21(B) is a plan view showing the modification of the work, and FIG. 21(C) is a perspective view showing the modification of the work. FIG. 22(A) is a partial perspective view showing a modification of the rotating platform, and FIG. 22(B) is a partial perspective view showing a modification of the rotating platform. 23 is a bottom view showing a modification of the rotating platform. FIG. 24 is a modified example of the vacuum processing apparatus and is a cross-sectional view corresponding to line C-C of FIG. 23. Fig. 25 is a perspective view showing a tray according to a modification. FIG. 26(A) is a partial cross-sectional explanatory view showing a process of assembling a workpiece to a pallet according to a modification, and FIG. 26(B) is a partial cross-sectional explanatory view showing the process of assembling a pallet to a rotating platform according to the modification. 26(C) is an explanatory diagram showing a partial cross-section of the modified tray with respect to the rotating platform after assembly. FIG. 27 is an exploded perspective view showing a tray of a modified example. Fig. 28 is an exploded perspective view showing a tray of a modification. FIG. 29(A) is a perspective view (A) of a tray showing a modification, and FIG. 29(B) is a cross-sectional view (B) corresponding to the line D-D of FIG. 29(A).

1‧‧‧Tray

4‧‧‧Sputter source

5‧‧‧Processing unit

6‧‧‧Power Department

8‧‧‧Shielding member

11‧‧‧ facing

11a‧‧‧Convex

20‧‧‧ chamber

20a‧‧‧Top plate

20b‧‧‧Inner bottom

20c‧‧‧Inner peripheral surface

21‧‧‧Vacuum chamber

21a‧‧‧ opening

22‧‧‧Exhaust

23‧‧‧Exhaust Department

24‧‧‧Inlet

25‧‧‧Gas Supply Department

31‧‧‧rotating platform

31a‧‧‧ opening

32‧‧‧Motor

33‧‧‧Department

33a‧‧‧pad

40‧‧‧Film-forming Department

41A, 41B, 41C‧‧‧ target material

42‧‧‧Backboard

43‧‧‧electrode

50‧‧‧Membrane Processing Department

51‧‧‧Cylinder

510‧‧‧Support

52‧‧‧Window components

53‧‧‧Supply Department

53b‧‧‧Piping

55‧‧‧ Antenna

55a‧‧‧radio frequency (RF) power supply

55b‧‧‧ Matcher

56‧‧‧Cooling Department

57‧‧‧Decentralized Department

57a‧‧‧Dispersion board

58‧‧‧Shielding member

58b‧‧‧Supporting member

58c‧‧‧recess

581‧‧‧Matrix

582‧‧‧Shielding board

80‧‧‧recess

81‧‧‧ opening

82‧‧‧Top Board Department

83a‧‧‧Peripheral wall

83b‧‧‧Inner peripheral wall

E‧‧‧Exhaust

G1‧‧‧Sputtering gas

G2‧‧‧Process gas

H‧‧‧Cylinder

S‧‧‧film-forming room

W‧‧‧Workpiece

Sp‧‧‧Processing target surface

Cp‧‧‧Convex

Claims (11)

A vacuum processing device, characterized in that it includes: a chamber capable of setting the interior to a vacuum; and a rotating platform provided in the chamber to circulate and transport the trajectory of the circumference with the rotation axis of the rotating platform as the center A workpiece; a plurality of pallets mounted on the rotating platform and placing the workpiece; and a processing unit plasmaizing the introduced reaction gas to perform predetermined processing on the workpiece transported by the rotating platform; Furthermore, the processing section has a shielding member that forms a space for plasmaizing the reaction gas, and the shielding member is open between the surface facing the tray and the processing section The interval that the workpiece placed on the pallet passes is arranged along the radial direction of the rotating platform, and the surfaces of the plurality of pallets facing the processing section are continuous along the trajectory of the circumference and become same plane. The vacuum processing apparatus according to item 1 of the patent application range, wherein the workpiece has a convex portion on a surface facing the processing portion, and the shield member has a concave portion along the convex portion of the workpiece. The vacuum processing apparatus according to item 2 of the patent application range, wherein the tray has a convex portion along the concave portion of the shield member on a surface facing the processing portion. The vacuum processing apparatus according to any one of claims 1 to 3, wherein the shielding member is provided with an adjusting portion that adjusts the film thickness distribution of the film to be formed. The vacuum processing apparatus according to any one of items 1 to 3 of the patent application range, wherein the rotating platform has a restricting portion that restricts the position of the tray. The vacuum processing apparatus according to any one of items 1 to 3 of the patent application range, wherein the tray has an embedded portion into which the workpiece is embedded. The vacuum processing apparatus according to any one of claims 1 to 3, wherein the processing section includes a film forming section that deposits a film forming material on the workpiece by sputtering to form a film. The vacuum processing apparatus according to any one of claims 1 to 3, wherein the processing section includes a film processing section that performs a film that reacts a film formed on the workpiece with a reaction gas deal with. A vacuum processing device includes: a chamber capable of setting the interior to a vacuum; a rotating platform provided in the chamber to circulate and transport workpieces along a circumferential trajectory; and a processing section that plasmaizes the introduced reaction gas Performing predetermined processing on the workpiece conveyed by the rotating platform; and the workpiece has a convex portion on a surface facing the processing portion, the processing portion has a shield member, and the shield member is level The workpieces transported on the stage are spaced and face each other, and have a concave portion along the convex portion of the workpiece, and a convex portion along the concave portion of the shield member is provided on the surface of the rotating platform, so The surface of the convex portion of the rotating platform has a portion that is continuous along the trajectory of the circumference and becomes the same plane. The vacuum processing apparatus according to item 9 of the patent application range, wherein the rotating platform has a mounting portion, and the mounting portion mounts a tray on which the workpiece is placed, and the surface of the rotating platform and the tray The surface of the generates a portion that is continuous along the trajectory of the circumference and becomes the same plane. A tray used for a vacuum processing device and for placing a workpiece, the vacuum processing device includes: a chamber capable of setting the interior to a vacuum; a rotating platform provided in the chamber to place the rotating platform The rotation axis is set to the center of the circumferential trajectory to circulate and transport the workpiece; and the processing unit plasmaizes the introduced reaction gas to perform predetermined processing on the workpiece to be transported through the rotating platform; the tray It is characterized in that the processing section has a shield member that forms a space for plasmaizing the reaction gas, and the shield member is empty between the surface of the tray that faces the processing section The space that can pass through the workpiece placed on the pallet is arranged along the radial direction of the rotating platform, By mounting a plurality of the trays on the rotating platform, the surfaces of the plurality of trays facing the processing section are continuous along the trajectory of the circumference and become the same plane.

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