JP2014110378A - Film formation device - Google Patents

Film formation device Download PDF

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JP2014110378A
JP2014110378A JP2012265136A JP2012265136A JP2014110378A JP 2014110378 A JP2014110378 A JP 2014110378A JP 2012265136 A JP2012265136 A JP 2012265136A JP 2012265136 A JP2012265136 A JP 2012265136A JP 2014110378 A JP2014110378 A JP 2014110378A
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mounting
mounting tables
axis
film forming
support portion
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Yoji Iizuka
洋二 飯塚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012265136A priority Critical patent/JP2014110378A/en
Priority to PCT/JP2013/082064 priority patent/WO2014087920A1/en
Priority to TW102144466A priority patent/TW201428132A/en
Publication of JP2014110378A publication Critical patent/JP2014110378A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a film formation device having a simple structure.SOLUTION: A film formation device 10 includes: a processing container 30; an exhaust device 83; an inner support part 50; an outer support part 55; one or more placement bases 60; a gas supply part 40; and a heater part 70. The inner support part 50 has a cylindrical shape and is provided in the processing container 30 so as to rotate around an axis line. The outer support part 55 has a cylindrical shape and is provided in the processing container 30 so as to be coaxially arranged with the inner support part 50 and rotate around the axis line. Each placement base 60 has an inner edge 60a supported by the inner support part 50 and an outer edge 60b supported by the outer support part 55. Further, the one or more placement bases 60 provide multiple substrate placement regions 62 in an annular region in which the axis line is located at the center thereof. The heater part 70 is fixedly disposed at an area which is located between the inner support part 50 and the outer support part 55 and below the one or more placement bases 60.

Description

本発明の実施形態は、成膜装置に関するものである。   Embodiments described herein relate generally to a film forming apparatus.

半導体デバイスの製造におけるプロセスの一つに、成膜プロセスがある。成膜プロセスでは、一般的に、処理容器内に収容された基板を加熱した状態で、処理容器内に原料ガスを供給することにより、基板上に成膜が行われる。   One process in the manufacture of semiconductor devices is a film formation process. In the film formation process, generally, film formation is performed on a substrate by supplying a source gas into the processing container while the substrate accommodated in the processing container is heated.

このような成膜プロセスを行うための成膜装置には、一枚の基板に対して成膜を行う枚葉式の装置と、複数の基板に対して同時に成膜を行うセミバッチ式の装置とがある。後者のタイプの装置は、その上に複数の基板を載置可能な基板ホルダーを、処理容器内に設けられた回転台上に搭載する構成を有している。このタイプの装置では、回転台を回転させることにより複数の基板を処理容器内で回転させるので、当該複数の基板は原料ガスに均一に曝される。このような成膜装置は、特許文献１に記載されている。   The film forming apparatus for performing such a film forming process includes a single-wafer type apparatus for forming a film on a single substrate, and a semi-batch type apparatus for simultaneously forming a film on a plurality of substrates. There is. The latter type of apparatus has a configuration in which a substrate holder on which a plurality of substrates can be placed is mounted on a turntable provided in a processing container. In this type of apparatus, the plurality of substrates are rotated in the processing container by rotating the turntable, so that the plurality of substrates are uniformly exposed to the source gas. Such a film forming apparatus is described in Patent Document 1.

特許文献１に記載された成膜装置では、基板に対して原料ガスを供給するためにシャワーヘッドが回転台の上方に設けられる。また、基板を加熱するためのヒータが略円盤状の回転台内に設けられる。   In the film forming apparatus described in Patent Document 1, a shower head is provided above a turntable in order to supply a source gas to a substrate. A heater for heating the substrate is provided in a substantially disk-shaped turntable.

特開昭６３−９６９１２号公報JP-A-63-96912

特許文献１に記載された装置では、回転台内にヒータが設けられているので、ヒータに電力を供給する電源とヒータとの間の配線等の構成が複雑になる。   In the apparatus described in Patent Document 1, since the heater is provided in the turntable, the configuration of the wiring and the like between the power source that supplies power to the heater and the heater is complicated.

従って、本技術分野においては、簡素な構成の成膜装置が望まれている。   Therefore, in this technical field, a film forming apparatus having a simple configuration is desired.

本発明の一側面に係る成膜装置は、処理容器と、排気装置と、内側支持部と、外側支持部と、一以上の載置台と、ガス供給部と、加熱部とを備える。内側支持部は、円筒形状を有し、処理容器内において軸線中心に回転可能に設けられる。外側支持部は、円筒形状を有し、処理容器内において内側支持部と同軸に設けられると共に軸線中心に回転可能に設けられる。載置台は、内側支持部によって支持される内側縁と外側支持部によって支持される外側縁を有する。また、一以上の載置台は、軸線を中心とする環状の領域において複数の基板載置領域を提供する。ガス供給部は、一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給する。加熱部は、一以上の載置台を加熱する。また、加熱部は、内側支持部と外側支持部の間、且つ、一以上の載置台の下方において固定配置される。   A film forming apparatus according to one aspect of the present invention includes a processing container, an exhaust device, an inner support part, an outer support part, one or more mounting tables, a gas supply part, and a heating part. The inner support portion has a cylindrical shape and is provided so as to be rotatable about the axis in the processing container. The outer support part has a cylindrical shape, is provided coaxially with the inner support part in the processing container, and is provided rotatably about the axis. The mounting table has an inner edge supported by the inner support part and an outer edge supported by the outer support part. The one or more mounting tables provide a plurality of substrate mounting areas in an annular area centered on the axis. The gas supply unit supplies processing gas from above the one or more mounting tables to the one or more mounting tables. The heating unit heats one or more mounting tables. The heating unit is fixedly disposed between the inner support unit and the outer support unit and below one or more mounting tables.

一実施形態に係る成膜装置は、一以上の載置台として、軸線中心に配列される扇形形状の複数の載置台を備え得る。   The film-forming apparatus which concerns on one Embodiment can be equipped with several fan-shaped mounting bases arranged in an axial center as one or more mounting bases.

一実施形態に係る成膜装置において、処理容器には、複数の載置台を通過させるための開口が形成され得る。開口を開閉させるためのゲートバルブを更に備え得る。開口の大きさは、外側支持部の直径よりも小さくし得る。   In the film forming apparatus according to an embodiment, the processing container may be formed with openings for allowing a plurality of mounting tables to pass therethrough. A gate valve for opening and closing the opening may be further provided. The size of the opening can be smaller than the diameter of the outer support.

一実施形態に係る成膜装置は、内側支持部及び外側支持部の間に反射部を更に備え得る。反射部は、加熱部から照射された光を載置台へ向けて反射させ得る。   The film forming apparatus according to an embodiment may further include a reflection unit between the inner support unit and the outer support unit. The reflection unit can reflect the light emitted from the heating unit toward the mounting table.

本発明の他の一側面に係る成膜装置は、処理容器と、排気装置と、内側支持部と、一以上の載置台と、ガス供給部と、加熱部とを備える。内側支持部は、円筒形状を有し、処理容器内において軸線中心に回転可能に設けられる。一以上の載置台は、内側支持部によって支持される内側縁を有し、軸線を中心とする環状の領域において複数の基板載置領域を提供する。ガス供給部は、一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給する。加熱部は、一以上の載置台を加熱する加熱部であり、一以上の載置台の下方において固定配置される。   A film forming apparatus according to another aspect of the present invention includes a processing container, an exhaust device, an inner support part, one or more mounting tables, a gas supply part, and a heating part. The inner support portion has a cylindrical shape and is provided so as to be rotatable about the axis in the processing container. One or more mounting bases have an inner edge supported by the inner support portion, and provide a plurality of substrate mounting areas in an annular area centered on the axis. The gas supply unit supplies processing gas from above the one or more mounting tables to the one or more mounting tables. The heating unit is a heating unit that heats one or more mounting tables, and is fixedly disposed below the one or more mounting tables.

本発明の更に他の一側面に係る成膜装置は、処理容器と、排気装置と、外側支持部と、一以上の載置台と、ガス供給部と、加熱部とを備える。外側支持部は、円筒形状を有し、処理容器内において軸線中心に回転可能に設けられる。一以上の載置台は、外側支持部によって支持される外側縁を有し、軸線を中心とする環状の領域において複数の基板載置領域を提供する。ガス供給部は、一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給する。加熱部は、一以上の載置台を加熱する加熱部であり、一以上の載置台の下方において固定配置される。   According to still another aspect of the present invention, a film forming apparatus includes a processing container, an exhaust device, an outer support, one or more mounting tables, a gas supply unit, and a heating unit. The outer support portion has a cylindrical shape and is provided so as to be rotatable about the axis in the processing container. One or more mounting bases have an outer edge supported by the outer support portion, and provide a plurality of substrate mounting areas in an annular area centered on the axis. The gas supply unit supplies processing gas from above the one or more mounting tables to the one or more mounting tables. The heating unit is a heating unit that heats one or more mounting tables, and is fixedly disposed below the one or more mounting tables.

本発明のより更に他の一側面に係る成膜装置は、処理容器と、排気装置と、環状支持部と、内側支持部と、外側支持部と、一以上の載置台と、ガス供給部と、加熱部とを備える。環状支持部は、処理容器内において、軸線を中心とする環状の載置台載置領域を提供する。内側支持部は、環状支持部が軸線中心に回転可能となるように環状支持部の内側縁を支持する。外側支持部は、環状支持部が軸線中心に回転可能となるように環状支持部の外側縁を支持する。一以上の載置台は、環状支持部の載置台載置領域に載置され、軸線を中心とする環状の領域において複数の基板載置領域を提供する。ガス供給部は、一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給する。加熱部は、一以上の載置台を加熱する加熱部であり、内側支持部と外側支持部の間、且つ、一以上の載置台の下方において固定配置される。   A film forming apparatus according to still another aspect of the present invention includes a processing container, an exhaust device, an annular support part, an inner support part, an outer support part, one or more mounting tables, and a gas supply part. And a heating unit. The annular support portion provides an annular mounting table mounting area centering on the axis within the processing container. The inner support portion supports the inner edge of the annular support portion so that the annular support portion can rotate about the axis. The outer support portion supports the outer edge of the annular support portion so that the annular support portion can rotate about the axis. The one or more mounting tables are mounted on the mounting table mounting area of the annular support portion, and provide a plurality of substrate mounting areas in an annular area centered on the axis. The gas supply unit supplies processing gas from above the one or more mounting tables to the one or more mounting tables. The heating unit is a heating unit that heats one or more mounting tables, and is fixedly disposed between the inner support unit and the outer support unit and below the one or more mounting tables.

以上説明したように、本発明の種々の側面・種々の実施形態によれば、簡素な構成の成膜装置を得ることができる。   As described above, according to various aspects and embodiments of the present invention, a film forming apparatus having a simple configuration can be obtained.

一実施形態に係る成膜装置を概略的に示す断面図である。It is sectional drawing which shows schematically the film-forming apparatus which concerns on one Embodiment. 図１のＩＩ−ＩＩ線に沿った断面図である。It is sectional drawing along the II-II line of FIG. 図２に示す成膜装置から、載置台を取り除いた状態を示す断面図である。It is sectional drawing which shows the state which removed the mounting base from the film-forming apparatus shown in FIG. 図１に示す成膜装置を適用した成膜システムの概略構成を示す平面図である。It is a top view which shows schematic structure of the film-forming system to which the film-forming apparatus shown in FIG. 1 is applied. 変形例に係る成膜装置を概略的に示す断面図である。It is sectional drawing which shows schematically the film-forming apparatus which concerns on a modification.

以下、図面を参照して、本発明に係る成膜装置の種々の実施形態について詳細に説明する。なお、各図面において同一又は相当の部分に対しては同一の符号を附す。   Hereinafter, various embodiments of a film forming apparatus according to the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

図１は、一実施形態に係る成膜装置を概略的に示す断面図であり、図２は、図１のＩＩ−ＩＩ線に沿った断面図である。図３は、図２に示す成膜装置から、載置台を取り除いた状態を示す断面図である。図１〜図３に示すように、成膜装置１０は、処理容器３０、ガス供給部４０、内側支持部５０、外側支持部５５、載置台６０、及び、ヒータ部（加熱部）７０を含んで構成される。本実施形態の成膜装置１０は、薄膜を成膜するＭＯＣＶＤ（Metal Organic Chemical Vapor Deposition）装置である。   FIG. 1 is a cross-sectional view schematically showing a film forming apparatus according to one embodiment, and FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 3 is a cross-sectional view showing a state in which the mounting table is removed from the film forming apparatus shown in FIG. As shown in FIGS. 1 to 3, the film forming apparatus 10 includes a processing container 30, a gas supply unit 40, an inner support unit 50, an outer support unit 55, a mounting table 60, and a heater unit (heating unit) 70. Consists of. The film forming apparatus 10 of this embodiment is a MOCVD (Metal Organic Chemical Vapor Deposition) apparatus for forming a thin film.

処理容器３０は、軸線Ｘ方向に延在する円筒形状の容器である。処理容器３０は、その内部に、基板Ｗに対して成膜処理を行うための円筒形状の処理空間Ｓを画成する。一実施形態において、処理容器３０は、天板３１、底板３２、外周壁３３、及び、内周壁３４を含んで構成され得る。天板３１及び底板３２は、それぞれ環状に形成される。外周壁３３及び内周壁３４は、それぞれ円筒形状に形成される。外周壁３３は、内周壁３４よりも大径となっている。天板３１の内周縁に、内周壁３４の上端が接続される。天板３１の外周縁に外周壁３３の上端が接続される。底板３２の内周縁に、内周壁３４の下端が接続される。これにより、軸線Ｘを中心軸とした円筒形状の処理空間Ｓが形成される。底板３２の外周縁と外周壁３３の内周面との間には、所定の隙間が設けられる。   The processing container 30 is a cylindrical container extending in the axis X direction. The processing container 30 defines a cylindrical processing space S for performing a film forming process on the substrate W therein. In one embodiment, the processing container 30 may include a top plate 31, a bottom plate 32, an outer peripheral wall 33, and an inner peripheral wall 34. The top plate 31 and the bottom plate 32 are each formed in an annular shape. The outer peripheral wall 33 and the inner peripheral wall 34 are each formed in a cylindrical shape. The outer peripheral wall 33 has a larger diameter than the inner peripheral wall 34. The upper end of the inner peripheral wall 34 is connected to the inner peripheral edge of the top plate 31. The upper end of the outer peripheral wall 33 is connected to the outer peripheral edge of the top plate 31. The lower end of the inner peripheral wall 34 is connected to the inner peripheral edge of the bottom plate 32. As a result, a cylindrical processing space S with the axis X as the central axis is formed. A predetermined gap is provided between the outer peripheral edge of the bottom plate 32 and the inner peripheral surface of the outer peripheral wall 33.

内側支持部５０は、円筒形状を有し、処理容器３０内において軸線Ｘと同軸に配置される。内側支持部５０の下端は、内周壁３４の下端部に設けられたベアリング５０ｂによって底板３２に対して回転可能に支持される。内側支持部５０は、軸線Ｘを回転軸として処理容器３０に対して相対的に回転する。   The inner support portion 50 has a cylindrical shape and is disposed coaxially with the axis X in the processing container 30. A lower end of the inner support portion 50 is rotatably supported with respect to the bottom plate 32 by a bearing 50 b provided at the lower end portion of the inner peripheral wall 34. The inner support part 50 rotates relative to the processing container 30 about the axis X as a rotation axis.

外側支持部５５は、円筒形状を有し、内側支持部５０よりも大径に形成される。外側支持部５５は、処理空間Ｓ内において内側支持部５０と同軸に配置される。外側支持部５５の下端は、底板３２の上面に設けられたベアリング５５ｂによって底板３２に対して回転可能に支持される。外側支持部５５は、軸線Ｘを回転軸として処理容器３０に対して相対的に回転する。   The outer support portion 55 has a cylindrical shape and is formed with a larger diameter than the inner support portion 50. The outer support portion 55 is disposed coaxially with the inner support portion 50 in the processing space S. A lower end of the outer support portion 55 is rotatably supported with respect to the bottom plate 32 by a bearing 55 b provided on the upper surface of the bottom plate 32. The outer support portion 55 rotates relative to the processing container 30 about the axis X as a rotation axis.

載置台６０は、複数設けられ、軸線Ｘを中心とする環状の領域において複数の基板載置領域６２（図２参照）を提供する。複数の載置台６０は、それぞれ、内側支持部５０によって着脱可能に支持される内側縁６０ａと、外側支持部５５によって着脱可能に支持される外側縁６０ｂとを有する。   A plurality of mounting tables 60 are provided, and provide a plurality of substrate mounting regions 62 (see FIG. 2) in an annular region centered on the axis X. Each of the plurality of mounting tables 60 includes an inner edge 60 a that is detachably supported by the inner support portion 50 and an outer edge 60 b that is detachably supported by the outer support portion 55.

一実施形態においては、図２に示すように、複数の載置台６０を、軸線Ｘを中心として配列される扇形形状の複数の載置台６０により構成してもよい。このように、載置台６０を扇形形状とすることで、複数の載置台６０を、軸線Ｘを中心とする環状に配列することができ、多くの基板載置領域６２を提供することができる。図２では、８枚の載置台６０が設けられた例を示しているが、載置台６０の枚数は８枚に限定されない。基板載置領域６２は、載置台６０の上面に形成される。基板載置領域６２は、当該領域に載置される基板Ｗの直径と略同様、又は、基板Ｗの直径よりも若干大きな直径を有する凹部として構成されている。載置台６０に基板載置領域６２を形成する際に、軸線Ｘから離れるにしたがって載置台６０に形成される基板載置領域６２の数を多くしてもよい。   In one embodiment, as shown in FIG. 2, the plurality of mounting tables 60 may be configured by a plurality of fan-shaped mounting tables 60 arranged around the axis X. Thus, by making the mounting table 60 into a fan shape, a plurality of mounting tables 60 can be arranged in an annular shape centering on the axis X, and a large number of substrate mounting regions 62 can be provided. Although FIG. 2 shows an example in which eight mounting tables 60 are provided, the number of mounting tables 60 is not limited to eight. The substrate placement area 62 is formed on the upper surface of the placement table 60. The substrate placement area 62 is configured as a recess that is substantially the same as the diameter of the substrate W placed in the area or has a diameter slightly larger than the diameter of the substrate W. When forming the substrate placement areas 62 on the placement table 60, the number of substrate placement areas 62 formed on the placement table 60 may be increased as the distance from the axis X increases.

ヒータ部７０は、内側支持部５０及び外側支持部５５の間であって載置台６０の下方に固定配置される。ヒータ部７０は、底板３２に固定される。図１及び図３に示すように、ヒータ部７０は、内側ヒータ部７１、中央ヒータ部７２、及び、外側ヒータ部７３を含んで構成される。内側ヒータ部７１は、環状を有し、内側支持部５０の周りに配置される。内側ヒータ部７１は、環状を有し、内側ヒータ部７１の周りに配置される。外側ヒータ部７３は、環状を有し、中央ヒータ部７２の周りに配置される。中央ヒータ部７２における径方向の幅は、内側ヒータ部７１及び外側ヒータ部７３における径方向の幅よりも広い。   The heater unit 70 is fixedly disposed below the mounting table 60 between the inner support unit 50 and the outer support unit 55. The heater unit 70 is fixed to the bottom plate 32. As shown in FIGS. 1 and 3, the heater unit 70 includes an inner heater unit 71, a central heater unit 72, and an outer heater unit 73. The inner heater portion 71 has an annular shape and is disposed around the inner support portion 50. The inner heater portion 71 has an annular shape and is disposed around the inner heater portion 71. The outer heater portion 73 has an annular shape and is disposed around the central heater portion 72. The radial width in the central heater portion 72 is wider than the radial width in the inner heater portion 71 and the outer heater portion 73.

内側ヒータ部７１は、内側ヒータ部７１の周方向に沿って並べて配置された第１内側ヒータ部７１Ａ、第２内側ヒータ部７１Ｂ、及び、第３内側ヒータ部７１Ｃを含んで構成される。中央ヒータ部７２は、中央ヒータ部７２の周方向に沿って並べて配置された第１中央ヒータ部７２Ａ、第２中央ヒータ部７２Ｂ、及び、第３中央ヒータ部７２Ｃを含んで構成される。外側ヒータ部７３は、外側ヒータ部７３の周方向に沿って並べて配置された第１外側ヒータ部７３Ａ、第２外側ヒータ部７３Ｂ、及び、第３外側ヒータ部７３Ｃを含んで構成される。   The inner heater portion 71 includes a first inner heater portion 71A, a second inner heater portion 71B, and a third inner heater portion 71C that are arranged along the circumferential direction of the inner heater portion 71. The central heater unit 72 includes a first central heater unit 72A, a second central heater unit 72B, and a third central heater unit 72C that are arranged side by side along the circumferential direction of the central heater unit 72. The outer heater unit 73 includes a first outer heater unit 73A, a second outer heater unit 73B, and a third outer heater unit 73C arranged side by side along the circumferential direction of the outer heater unit 73.

第１内側ヒータ部７１Ａ、第２内側ヒータ部７１Ｂ、第３内側ヒータ部７１Ｃ、第１中央ヒータ部７２Ａ、第２中央ヒータ部７２Ｂ、第３中央ヒータ部７２Ｃ、第１外側ヒータ部７３Ａ、第２外側ヒータ部７３Ｂ、及び、第３外側ヒータ部７３Ｃは、配線７４ａを介して電力供給部７４に接続される。ヒータ部７０は、電力供給部７４から供給された電力により発熱する。配線７４ａは、内側支持部５０と外側支持部５５との間の空間を通り、電力供給部７４に接続される。   The first inner heater portion 71A, the second inner heater portion 71B, the third inner heater portion 71C, the first central heater portion 72A, the second central heater portion 72B, the third central heater portion 72C, the first outer heater portion 73A, the first The second outer heater unit 73B and the third outer heater unit 73C are connected to the power supply unit 74 via the wiring 74a. The heater unit 70 generates heat by the power supplied from the power supply unit 74. The wiring 74 a passes through the space between the inner support part 50 and the outer support part 55 and is connected to the power supply part 74.

内側ヒータ部７１及び外側ヒータ部７３は、中央ヒータ部７２よりも外部に熱が逃げ易い場合がある。この場合、電力供給部７４は、内側ヒータ部７１及び外側ヒータ部７３が、中央ヒータ部７２よりも高温となるように、供給する電力を制御してもよい。このような制御を行うことで、載置台６０に載置された基板Ｗを均一に加熱することができる。また、内側ヒータ部７１、中央ヒータ部７２、及び外側ヒータ部７３の設定温度をそれぞれ異なるように、供給する電力を制御してもよい。このような制御を行うことで、成膜温度以外に起因する膜質の差を補正することができ、最終的に均一な膜質を得ることもできる。ヒータ部７０を複数のヒータ部によって構成することで、ヒータ部７０に不具合が生じた場合に、不具合が生じたヒータ部のみを容易に交換することができる。   In some cases, the inner heater portion 71 and the outer heater portion 73 are more likely to release heat to the outside than the central heater portion 72. In this case, the power supply unit 74 may control the power supplied so that the inner heater unit 71 and the outer heater unit 73 have a higher temperature than the central heater unit 72. By performing such control, the substrate W mounted on the mounting table 60 can be heated uniformly. Moreover, you may control the electric power supplied so that the preset temperature of the inner side heater part 71, the center heater part 72, and the outer side heater part 73 may each differ. By performing such control, a difference in film quality caused by other than the film formation temperature can be corrected, and finally a uniform film quality can be obtained. By configuring the heater unit 70 with a plurality of heater units, when a failure occurs in the heater unit 70, only the heater unit in which the failure has occurred can be easily replaced.

一実施形態においては、ヒータ部７０の下方に、反射板（反射部）７５を設けてもよい。反射板７５は、ヒータ部７０から照射された光を載置台６０側に向けて反射させ得る。この場合、載置台６０上の基板Ｗを効率よく加熱することができる。   In one embodiment, a reflector (reflector) 75 may be provided below the heater unit 70. The reflection plate 75 can reflect the light emitted from the heater unit 70 toward the mounting table 60 side. In this case, the substrate W on the mounting table 60 can be efficiently heated.

また、成膜装置１０は、内側ヒータ部７１、中央ヒータ部７２、及び外側ヒータ部７３の温度を計測する温度計測器７６を備えていてもよい。内側ヒータ部７１、中央ヒータ部７２、及び外側ヒータ部７３には、それぞれ、温度計測用のセンサー７６ａが設けられる。センサー７６ａとして、例えば、熱電対を用いることができる。センサー７６ａは、内側支持部５０と外側支持部５５との間の空間を通り、温度計測器７６に接続される。   Further, the film forming apparatus 10 may include a temperature measuring device 76 that measures the temperatures of the inner heater unit 71, the central heater unit 72, and the outer heater unit 73. Each of the inner heater 71, the central heater 72, and the outer heater 73 is provided with a temperature measuring sensor 76a. For example, a thermocouple can be used as the sensor 76a. The sensor 76 a passes through a space between the inner support portion 50 and the outer support portion 55 and is connected to the temperature measuring device 76.

外周壁３３と外側支持部５５とに間には、環状の排気路８０が形成される。排気路８０の上部には、複数の貫通孔が設けられた環状のバッフル板８１が取り付けられる。バッフル板８１の外周縁は外周壁３３の内周壁に固定され、バッフル板８１の内周縁は外側支持部５５の上端部の位置まで延びている。   An annular exhaust path 80 is formed between the outer peripheral wall 33 and the outer support portion 55. An annular baffle plate 81 provided with a plurality of through holes is attached to the upper portion of the exhaust passage 80. The outer peripheral edge of the baffle plate 81 is fixed to the inner peripheral wall of the outer peripheral wall 33, and the inner peripheral edge of the baffle plate 81 extends to the position of the upper end portion of the outer support portion 55.

排気路８０には、圧力調整器８２を介して排気装置８３が接続される。排気装置８３は、真空ポンプを有している。圧力調整器８２は、排気装置８３の排気量を調整して処理空間Ｓ内の圧力を調整する。排気装置８３により、処理容器３０内の処理空間Ｓを所望の真空度まで減圧することができる。   An exhaust device 83 is connected to the exhaust path 80 via a pressure regulator 82. The exhaust device 83 has a vacuum pump. The pressure regulator 82 adjusts the pressure in the processing space S by adjusting the exhaust amount of the exhaust device 83. The exhaust device 83 can depressurize the processing space S in the processing container 30 to a desired degree of vacuum.

ガス供給部４０は、第１ガス供給部４１、第２ガス供給部４２、及び、シャワーヘッド４３を含んで構成される。シャワーヘッド４３は、天板３１における処理空間Ｓ側の面に取り付けられる。即ち、シャワーヘッド４３は、載置台６０に載置された基板Ｗの上面に対向する。シャワーヘッド４３には、複数の第１吐出孔４３ａ、及び、複数の第２吐出孔４３ｂが設けられる。第１吐出孔４３ａ及び第２吐出孔４３ｂは、軸線Ｘ方向から見てマトリックス状に交互に配置される。   The gas supply unit 40 includes a first gas supply unit 41, a second gas supply unit 42, and a shower head 43. The shower head 43 is attached to the surface of the top plate 31 on the processing space S side. That is, the shower head 43 faces the upper surface of the substrate W placed on the placement table 60. The shower head 43 is provided with a plurality of first discharge holes 43a and a plurality of second discharge holes 43b. The first discharge holes 43a and the second discharge holes 43b are alternately arranged in a matrix when viewed from the axis X direction.

第１ガス供給部４１は、第１吐出孔４３ａに２種類の処理ガスを供給する。第１ガス供給部４１からシャワーヘッド４３に供給された処理ガスは、第１吐出孔４３ａから基板Ｗに向けて吐出される。第１ガス供給部４１は、第１弁４１ａ、第１流量制御器４１ｂ、及び、第１ガス源４１ｃと、第２弁４１ｄ、第２流量制御器４１ｅ、及び、第２ガス源４１ｆとを含んで構成される。   The first gas supply unit 41 supplies two types of processing gases to the first discharge holes 43a. The processing gas supplied from the first gas supply unit 41 to the shower head 43 is discharged toward the substrate W from the first discharge holes 43a. The first gas supply unit 41 includes a first valve 41a, a first flow rate controller 41b, and a first gas source 41c, a second valve 41d, a second flow rate controller 41e, and a second gas source 41f. Consists of including.

第１流量制御器４１ｂは、第１ガス源４１ｃから供給される処理ガスの流量を制御する。第１弁４１ａは、第１流量制御器４１ｂからシャワーヘッド４３への処理ガスの流通及び流通の遮断を切り替える。第１ガス源４１ｃとして、例えば、窒化ガリウムを成膜する際のガリウムの前駆体となるトリメチルガリウムガス源を用いることができる。   The first flow rate controller 41b controls the flow rate of the processing gas supplied from the first gas source 41c. The first valve 41 a switches between processing gas flow from the first flow rate controller 41 b to the shower head 43 and blocking of the flow. As the first gas source 41c, for example, a trimethylgallium gas source that becomes a gallium precursor when a gallium nitride film is formed can be used.

第２流量制御器４１ｅは、第２ガス源４１ｆから供給される処理ガスの流量を制御する。第２弁４１ｄは、第２流量制御器４１ｅからシャワーヘッド４３への処理ガスの流通及び流通の遮断を切り替える。希釈ガスとして用いられる第２ガス源４１ｆとして、例えば、水素ガスを用いることができる。   The second flow rate controller 41e controls the flow rate of the processing gas supplied from the second gas source 41f. The second valve 41d switches between processing gas flow from the second flow rate controller 41e to the shower head 43 and blocking of the flow. As the second gas source 41f used as the dilution gas, for example, hydrogen gas can be used.

第２ガス供給部４２は、第２吐出孔４３ｂに２種類の処理ガスを供給する。第２ガス供給部４２からシャワーヘッド４３に供給された処理ガスは、第２吐出孔４３ｂから基板Ｗに向けて吐出される。第２ガス供給部４２は、第３弁４２ａ、第３流量制御器４２ｂ、及び、第３ガス源４２ｃと、第４弁４２ｄ、第４流量制御器４２ｅ、及び、第４ガス源４２ｆとを含んで構成される。   The second gas supply unit 42 supplies two types of processing gases to the second discharge holes 43b. The processing gas supplied from the second gas supply unit 42 to the shower head 43 is discharged toward the substrate W from the second discharge holes 43b. The second gas supply unit 42 includes a third valve 42a, a third flow rate controller 42b, and a third gas source 42c, a fourth valve 42d, a fourth flow rate controller 42e, and a fourth gas source 42f. Consists of including.

第３流量制御器４２ｂは、第３ガス源４２ｃから供給される処理ガスの流量を制御する。第３弁４２ａは、第３流量制御器４２ｂからシャワーヘッド４３への処理ガスの流通及び流通の遮断を切り替える。窒化ガリウムを成膜する際の窒素源となる第３ガス源４２ｃとして、少なくとも窒素が含まれるガスが用いられる。例えば、アンモニア、窒素、ヒドラジンを用いることができる。   The third flow rate controller 42b controls the flow rate of the processing gas supplied from the third gas source 42c. The third valve 42a switches between processing gas flow from the third flow rate controller 42b to the shower head 43 and blocking of the flow. A gas containing at least nitrogen is used as the third gas source 42c serving as a nitrogen source when forming the gallium nitride film. For example, ammonia, nitrogen, or hydrazine can be used.

第４流量制御器４２ｅは、第４ガス源４２ｆから供給される処理ガスの流量を制御する。第４弁４２ｄは、第４流量制御器４２ｅからシャワーヘッド４３への処理ガスの流通及び流通の遮断を切り替える。希釈ガスとして用いられる第４ガス源４２ｆとして、例えば、水素ガスを用いることができる。   The fourth flow rate controller 42e controls the flow rate of the processing gas supplied from the fourth gas source 42f. The fourth valve 42d switches between processing gas flow from the fourth flow rate controller 42e to the shower head 43 and blocking of the flow. As the fourth gas source 42f used as the dilution gas, for example, hydrogen gas can be used.

第１吐出孔４３ａ及び第２吐出孔４３ｂのそれぞれから吐出された処理ガスは、処理空間Ｓで混合される。   The processing gas discharged from each of the first discharge holes 43a and the second discharge holes 43b is mixed in the processing space S.

排気装置８３によって処理空間Ｓを所望の真空度にした後、ヒータ部７０によって基板Ｗを加熱し、シャワーヘッド４３から処理ガスを吐出することで、載置台６０に載置された基板Ｗの処理が行われる。   After the processing space S is set to a desired degree of vacuum by the exhaust device 83, the substrate W is heated by the heater unit 70 and the processing gas is discharged from the shower head 43, thereby processing the substrate W placed on the mounting table 60. Is done.

また、載置台６０上の複数の基板Ｗに均一に処理ガスが供給されるように、軸線Ｘを回転軸として載置台６０を回転させる。載置台６０を回転駆動する機構の一例について説明する。内周壁３４の内側に、軸線Ｘを回転軸として回転する電磁コイル２１を備えた駆動装置２０を設ける。内側支持部５０を磁性体によって形成し、内周壁３４を非磁性体によって形成する。電磁コイル２１の極性を変更することによって、内側支持部５０と共に複数の載置台６０を回転させることができる。他の例として、電磁コイル２１と内側支持部５０とが互いに引き付けあっている状態で、電磁コイル２１を回転させることで、内側支持部５０と共に複数の載置台６０を回転させることができる。なお、この場合は、電磁コイル２１の代わりに、永久磁石を用いてもよい。また、他の例として、処理空間Ｓ内に内側支持部５０及び外側支持部５５のうちの少なくともいずれかを駆動するモータを設け、このモータの駆動力によって載置台６０を回転させてもよい。載置台６０を回転駆動する機構については上述した機構に限定されず、種々の機構を用いることができる。   Further, the mounting table 60 is rotated about the axis X as a rotation axis so that the processing gas is uniformly supplied to the plurality of substrates W on the mounting table 60. An example of a mechanism that rotationally drives the mounting table 60 will be described. Inside the inner peripheral wall 34, the driving device 20 including the electromagnetic coil 21 that rotates about the axis X as a rotation axis is provided. The inner support portion 50 is formed of a magnetic material, and the inner peripheral wall 34 is formed of a nonmagnetic material. By changing the polarity of the electromagnetic coil 21, the plurality of mounting tables 60 can be rotated together with the inner support portion 50. As another example, the plurality of mounting tables 60 can be rotated together with the inner support part 50 by rotating the electromagnetic coil 21 in a state where the electromagnetic coil 21 and the inner support part 50 are attracted to each other. In this case, a permanent magnet may be used instead of the electromagnetic coil 21. As another example, a motor that drives at least one of the inner support portion 50 and the outer support portion 55 may be provided in the processing space S, and the mounting table 60 may be rotated by the driving force of this motor. The mechanism for rotationally driving the mounting table 60 is not limited to the mechanism described above, and various mechanisms can be used.

図２に示すように、外周壁３３の一部には、ゲートバルブ９０が設けられる。ゲートバルブ９０は、外周壁３３に設けられた開口部３３ａを開閉する。ゲートバルブ９０を介して、基板Ｗが載置された載置台６０が処理空間Ｓに搬入、又は、処理空間Ｓから載置台６０が搬出される。一実施形態においては、開口部３３ａを、外側支持部５５の直径よりも小さく、且つ、載置台６０が通過可能な大きさに形成してもよい。この場合、載置台６０を開口部３３ａを介して搬送可能としつつ、ゲートバルブ９０の小型化を図ることができる。また、図３に示すように、処理容器３０内において、ゲートバルブ９０の近傍には載置台６０の上げ下げを行う受渡機構９１を備え得る。受渡機構９１は、搬送アーム１２１から内側支持部５０及び外側支持部５５への載置台６０の受け渡し時、及び、内側支持部５０及び外側支持部５５から搬送アーム１２１への載置台６０の受け渡し時に載置台６０を上下させ、受け渡しの補助を行う。   As shown in FIG. 2, a gate valve 90 is provided on a part of the outer peripheral wall 33. The gate valve 90 opens and closes an opening 33 a provided in the outer peripheral wall 33. Through the gate valve 90, the mounting table 60 on which the substrate W is mounted is loaded into the processing space S, or the mounting table 60 is unloaded from the processing space S. In one embodiment, the opening 33a may be formed in a size that is smaller than the diameter of the outer support portion 55 and through which the mounting table 60 can pass. In this case, the gate valve 90 can be downsized while the mounting table 60 can be transported through the opening 33a. As shown in FIG. 3, a delivery mechanism 91 that raises and lowers the mounting table 60 can be provided in the vicinity of the gate valve 90 in the processing container 30. The delivery mechanism 91 is used when the mounting table 60 is transferred from the transfer arm 121 to the inner support unit 50 and the outer support unit 55, and when the mounting table 60 is transferred from the inner support unit 50 and the outer support unit 55 to the transfer arm 121. The mounting table 60 is moved up and down to assist delivery.

図４に、成膜装置を適用した成膜システムの概略構成を示す。図４に示すように、成膜システム１は、成膜装置１０及び１０Ａ、ロードロックチャンバ１１０、搬送室１２０、及び、ストッカ１３０を含んで構成される。なお、成膜装置１０Ａは、成膜装置１０と同じ構成である。   FIG. 4 shows a schematic configuration of a film forming system to which the film forming apparatus is applied. As shown in FIG. 4, the film forming system 1 includes film forming apparatuses 10 and 10A, a load lock chamber 110, a transfer chamber 120, and a stocker 130. The film forming apparatus 10A has the same configuration as the film forming apparatus 10.

搬送室１２０は、成膜装置１０と成膜装置１０Ａとの間に配置される。搬送室１２０の室内空間１２０ａは、成膜装置１０のゲートバルブ９０を介して、成膜装置１０の処理空間Ｓに接続される。また、搬送室１２０の室内空間１２０ａは、成膜装置１０Ａのゲートバルブ９０を介して、成膜装置１０Ａの処理空間Ｓに接続される。更に、搬送室１２０には、ロードロックチャンバ１１０、及び、ストッカ１３０が接続される。   The transfer chamber 120 is disposed between the film forming apparatus 10 and the film forming apparatus 10A. The indoor space 120 a of the transfer chamber 120 is connected to the processing space S of the film forming apparatus 10 via the gate valve 90 of the film forming apparatus 10. The indoor space 120a of the transfer chamber 120 is connected to the processing space S of the film forming apparatus 10A via the gate valve 90 of the film forming apparatus 10A. Further, a load lock chamber 110 and a stocker 130 are connected to the transfer chamber 120.

搬送室１２０の室内空間１２０ａには、搬送アーム１２１が備えられる。搬送アーム１２１は、ロードロックチャンバ１１０内に搬送された載置台６０を、ストッカ１３０又は成膜装置１０等に搬送したり、成膜装置１０及び１０Ａ内の載置台６０をストッカ１３０又はロードロックチャンバ１１０に搬送したりする。   A transfer arm 121 is provided in the indoor space 120 a of the transfer chamber 120. The transfer arm 121 transfers the mounting table 60 transferred into the load lock chamber 110 to the stocker 130 or the film forming apparatus 10 or the like, or transfers the mounting table 60 in the film forming apparatuses 10 and 10A to the stocker 130 or the load lock chamber. Or to 110.

成膜装置１０から処理済みの基板Ｗが載置された載置台６０を取り出し、未処理の基板Ｗが載置された載置台６０を成膜装置１０内に搬入する搬送処理の一例について説明する。まず、外部の装置からロードロックチャンバ１１０内に、未処理の基板Ｗが載置された８枚の載置台６０を搬入する。そして、ロードロックチャンバ１１０内を減圧する。なお、搬送室１２０及びストッカ１３０内は減圧状態であるものとする。次に、ロードロックチャンバ１１０と搬送室１２０との間のゲートバルブを開け、ロードロックチャンバ１１０内の載置台６０を、搬送アーム１２１によって１枚ずつストッカ１３０に収納する。そして、搬送室１２０とロードロックチャンバ１１０との間のゲートバルブを閉じる。   An example of a transfer process of taking out the mounting table 60 on which the processed substrate W is mounted from the film forming apparatus 10 and carrying the mounting table 60 on which the unprocessed substrate W is mounted into the film forming apparatus 10 will be described. . First, eight placement tables 60 on which unprocessed substrates W are placed are loaded into the load lock chamber 110 from an external device. Then, the inside of the load lock chamber 110 is depressurized. Note that the inside of the transfer chamber 120 and the stocker 130 is in a reduced pressure state. Next, the gate valve between the load lock chamber 110 and the transfer chamber 120 is opened, and the mounting table 60 in the load lock chamber 110 is stored in the stocker 130 one by one by the transfer arm 121. Then, the gate valve between the transfer chamber 120 and the load lock chamber 110 is closed.

次に、成膜装置１０と搬送室１２０との間のゲートバルブ９０を開け、成膜装置１０内の処理済みの基板Ｗが載置された載置台６０を搬送アーム１２１によって受け取り、ストッカ１３０に収納する。そして、ストッカ１３０に収納された未処理の基板Ｗが載置された載置台６０を搬送アーム１２１によって受け取り、成膜装置１０の処理空間Ｓに搬送する。この成膜装置１０とストッカ１３０との間での載置台６０の交換を繰り返し、成膜装置１０内の載置台６０を、全て、未処理の基板Ｗが載置された載置台６０に交換する。   Next, the gate valve 90 between the film forming apparatus 10 and the transfer chamber 120 is opened, the mounting table 60 on which the processed substrate W in the film forming apparatus 10 is mounted is received by the transfer arm 121, and stored in the stocker 130. Store. Then, the mounting table 60 on which the unprocessed substrate W stored in the stocker 130 is mounted is received by the transfer arm 121 and transferred to the processing space S of the film forming apparatus 10. The exchange of the mounting table 60 between the film forming apparatus 10 and the stocker 130 is repeated, and all the mounting tables 60 in the film forming apparatus 10 are replaced with the mounting table 60 on which the unprocessed substrate W is mounted. .

交換が完了すると、成膜装置１０と搬送室１２０との間のゲートバルブ９０を閉じ、搬送室１２０とロードロックチャンバ１１０との間のゲートバルブを開ける。そして、ストッカ１３０に収納された処理済みの基板Ｗが載置された８枚の載置台６０を搬送アーム１２１によって１枚ずつロードロックチャンバ１１０に収納する。そして、搬送室１２０とロードロックチャンバ１１０との間のゲートバルブを閉じ、ロードロックチャンバ１１０内から、処理済みの基板Ｗが載置された載置台６０を取り出す。なお、上述した搬送処理の手順は一例であり、他の手順で載置台６０の搬送を行ってもよい。また、ロードロックチャンバ１１０は、載置台６０を一枚のみ搬入可能な狭隘な空間で構成されていてもよい。この場合であっても、ストッカ１３０が設けられているのでスループットを低下させずに載置台６０の搬入出が可能となる。   When the replacement is completed, the gate valve 90 between the film forming apparatus 10 and the transfer chamber 120 is closed, and the gate valve between the transfer chamber 120 and the load lock chamber 110 is opened. Then, the eight mounting tables 60 on which the processed substrates W stored in the stocker 130 are mounted are stored one by one in the load lock chamber 110 by the transfer arm 121. Then, the gate valve between the transfer chamber 120 and the load lock chamber 110 is closed, and the mounting table 60 on which the processed substrate W is mounted is taken out from the load lock chamber 110. In addition, the procedure of the conveyance process mentioned above is an example, and you may convey the mounting base 60 in another procedure. Further, the load lock chamber 110 may be configured as a narrow space in which only one mounting table 60 can be carried. Even in this case, since the stocker 130 is provided, the loading table 60 can be loaded and unloaded without reducing the throughput.

本実施形態は以上のように構成され、載置台６０を、内側支持部５０と外側支持部５５とによって支持することで、内側支持部５０と外側支持部５５との間に空間が形成される。内側支持部５０と外側支持部５５との間、且つ、載置台６０の下方にヒータ部７０を配置することで、ヒータ部７０を、底板３２に容易に固定配置することができる。ヒータ部７０が内側支持部５０等のように回転しないため、ヒータ部７０に電力を供給する配線７４ａ等の配置位置や構成を簡素なものとすることができる。従って、簡素な構成の成膜装置１０を得ることができる。   The present embodiment is configured as described above, and a space is formed between the inner support portion 50 and the outer support portion 55 by supporting the mounting table 60 with the inner support portion 50 and the outer support portion 55. . By arranging the heater part 70 between the inner support part 50 and the outer support part 55 and below the mounting table 60, the heater part 70 can be easily fixedly arranged on the bottom plate 32. Since the heater unit 70 does not rotate like the inner support unit 50 or the like, the arrangement position and configuration of the wiring 74a and the like for supplying power to the heater unit 70 can be simplified. Therefore, the film forming apparatus 10 having a simple configuration can be obtained.

また、載置台６０の内側縁６０ａと外側縁６０ｂとをそれぞれ内側支持部５０と外側支持部５５とで支持することで、載置台６０が大型化しても確実に載置台６０を支持することができる。   Further, by supporting the inner edge 60a and the outer edge 60b of the mounting table 60 with the inner support portion 50 and the outer support portion 55, respectively, the mounting table 60 can be reliably supported even when the mounting table 60 is enlarged. it can.

また、本実施形態に係る成膜装置１０では、内側支持部５０と外側支持部５５との間に広い空間を形成することができる。この空間を用いて、温度計測器７６のセンサー７６ａを容易に設置することができる。センサー７６ａを設置する空間が広いので、センサー７６ａの交換作業等も容易に行うことができる。また、センサー７６ａ周辺は、処理容器３０内が減圧状態であるために異常放電が発生する恐れがある。しかしながら、センサー７６ａを設置する空間が広いため、センサー７６ａを設置したとしても異常放電の発生を抑制できる。加えて、ヒータ部７０に直流電流を供給する場合、処理容器３０内が減圧状態であるために異常放電が発生する恐れがある。しかしながら、配線７４ａを設置する空間が広いため、配線７４ａを設置したとしても異常放電の発生を抑制できる。なお、温度計測器７６及びセンサー７６ａの例として熱電対を示したが、ヒータ部７０の下方側の空間が広いため、測定ゾーンを直接狙う赤外放射温度計や、パイロメーター等の非接触温度計を容易に設けることができる。   In the film forming apparatus 10 according to this embodiment, a wide space can be formed between the inner support portion 50 and the outer support portion 55. The sensor 76a of the temperature measuring device 76 can be easily installed using this space. Since the space for installing the sensor 76a is wide, the replacement work of the sensor 76a can be easily performed. In addition, abnormal discharge may occur around the sensor 76a because the inside of the processing container 30 is in a reduced pressure state. However, since the space for installing the sensor 76a is wide, even if the sensor 76a is installed, the occurrence of abnormal discharge can be suppressed. In addition, when a direct current is supplied to the heater unit 70, abnormal discharge may occur because the inside of the processing container 30 is in a reduced pressure state. However, since the space for installing the wiring 74a is wide, even if the wiring 74a is installed, the occurrence of abnormal discharge can be suppressed. In addition, although the thermocouple was shown as an example of the temperature measuring device 76 and the sensor 76a, since the space below the heater unit 70 is wide, the non-contact temperature such as an infrared radiation thermometer or a pyrometer that directly targets the measurement zone A meter can be easily provided.

本実施形態に係る成膜装置１０は、載置台６０上の基板Ｗを軸線Ｘを中心として公転のみさせるものである。このため、本実施形態に係る成膜装置１０は、基板を公転と自転とをさせる成膜装置に対して簡素な構成とすることができる。また、本実施形態に係る成膜装置１０は、シャワーヘッド４３を用いて基板Ｗに処理ガスを供給する構成であるので、基板Ｗが公転のみしか行わないものであったとしても、複数の基板Ｗに均一に処理ガスを供給することができる。   The film forming apparatus 10 according to this embodiment is configured to revolve the substrate W on the mounting table 60 about the axis X. For this reason, the film-forming apparatus 10 which concerns on this embodiment can be set as a simple structure with respect to the film-forming apparatus which revolves and rotates a board | substrate. In addition, since the film forming apparatus 10 according to the present embodiment is configured to supply the processing gas to the substrate W using the shower head 43, even if the substrate W performs only revolution, a plurality of substrates are used. The processing gas can be uniformly supplied to W.

以上、種々の実施形態について説明したが、上述した実施形態に限定されることなく、種々の変形形態を構成可能である。例えば、上述した、処理空間Ｓに供給する処理ガスの種類は一例であり、他の処理ガスを供給してもよい。また、本実施の形態では、ＭＯＣＶＤ装置について説明したが、これにとらわれず、ＭＯＶＰＥ(Metal-Organic Vapor Phase Epitaxy)装置、ＣＶＤ装置、ＡＬＤ（Atomic Layer Deposition）装置、ＰＶＤ装置のような成膜装置であってよく、膜の改質を行う装置やエッチング装置等の処理装置であってもよい。   Although various embodiments have been described above, various modifications can be made without being limited to the above-described embodiments. For example, the type of processing gas supplied to the processing space S described above is an example, and another processing gas may be supplied. In this embodiment, the MOCVD apparatus has been described. However, the present invention is not limited thereto, and a film forming apparatus such as a MOVPE (Metal-Organic Vapor Phase Epitaxy) apparatus, a CVD apparatus, an ALD (Atomic Layer Deposition) apparatus, and a PVD apparatus is used. It may be a processing apparatus such as an apparatus for modifying a film or an etching apparatus.

また、上述した実施形態では、シャワーヘッド４３を用いて基板Ｗに処理ガスを供給するものとしたが、シャワーヘッド４３を用いるものに限定されない。例えば、シャワーヘッド４３に代えて、環状に配置された複数の載置台６０の中央部から周辺部に向けて処理ガスを供給するインジェクタ等を用いることもできる。   In the above-described embodiment, the processing gas is supplied to the substrate W using the shower head 43, but is not limited to the one using the shower head 43. For example, instead of the shower head 43, an injector or the like that supplies a processing gas from a central portion to a peripheral portion of a plurality of mounting tables 60 arranged in an annular shape may be used.

また、上述した実施形態では、載置台６０の内側縁及び外側縁を、それぞれ内側支持部５０及び外側支持部５５によって支持するものとしたが、内側支持部５０によって載置台６０の内側縁のみを支持する構成であってもよく、外側支持部５５によって載置台６０の外側縁のみを支持する構成であってもよい。この場合であっても、実施形態と同様の効果を得ることができる。   In the above-described embodiment, the inner edge and the outer edge of the mounting table 60 are supported by the inner support part 50 and the outer support part 55, respectively. However, only the inner edge of the mounting table 60 is supported by the inner support part 50. The structure which supports may be sufficient and the structure which supports only the outer edge of the mounting base 60 by the outer side support part 55 may be sufficient. Even in this case, the same effect as the embodiment can be obtained.

また、内側支持部５０及び外側支持部５５に代えて、図５に示す成膜装置１０Ａのように、軸線Ｘを中心とする環状の載置台載置領域を提供する環状支持部１００により、複数の載置台６０を下方側から支持する構成であってもよい。この場合、環状支持部１００の内側縁を、ベアリング等によって構成された内側支持部１０１によって、軸線Ｘを中心に回転可能に支持する。また、環状支持部１００の外側縁を、ベアリング等によって構成された外側支持部１０２によって、軸線Ｘを中心に回転可能に支持する。ヒータ部７０及び反射板７５は、環状支持部１００の下方側であって、内側支持部１０１と外側支持部１０２との間に配置する。この場合であっても、実施形態と同様に、ヒータ部７０が回転しないため、ヒータ部７０に電力を供給する配線７４ａ等の配置位置や構成を簡素なものとすることができる。従って、簡素な構成の成膜装置１０Ａを得ることができる。   Further, instead of the inner support portion 50 and the outer support portion 55, a plurality of annular support portions 100 that provide an annular placement table placement region centering on the axis X, as in the film forming apparatus 10A shown in FIG. The mounting table 60 may be supported from below. In this case, the inner edge of the annular support portion 100 is supported by the inner support portion 101 configured by a bearing or the like so as to be rotatable about the axis X. Further, the outer edge of the annular support portion 100 is supported so as to be rotatable about the axis X by an outer support portion 102 constituted by a bearing or the like. The heater unit 70 and the reflection plate 75 are disposed below the annular support unit 100 and between the inner support unit 101 and the outer support unit 102. Even in this case, since the heater unit 70 does not rotate as in the embodiment, the arrangement position and configuration of the wiring 74a and the like for supplying power to the heater unit 70 can be simplified. Therefore, the film forming apparatus 10A having a simple configuration can be obtained.

１０，１０Ａ…成膜装置、３０…処理容器、４０…ガス供給部、５０，１０１…内側支持部、５５，１０２…外側支持部、６０…載置台、７０…ヒータ部（加熱部）、７５…反射板（反射部）、８３…排気装置、９０…ゲートバルブ、１００…環状支持部、Ｓ…処理空間、Ｗ…基板。   DESCRIPTION OF SYMBOLS 10,10A ... Film-forming apparatus, 30 ... Processing container, 40 ... Gas supply part, 50, 101 ... Inner support part, 55, 102 ... Outer support part, 60 ... Mounting stand, 70 ... Heater part (heating part), 75 DESCRIPTION OF SYMBOLS ... Reflecting plate (reflecting part), 83 ... Exhaust device, 90 ... Gate valve, 100 ... Circular support part, S ... Processing space, W ... Substrate.

Claims (7)

処理容器と、
排気装置と、
円筒形状を有し、前記処理容器内において軸線中心に回転可能に設けられた内側支持部と、
円筒形状を有し、前記処理容器内において前記内側支持部と同軸に設けられており、前記軸線中心に回転可能に設けられた外側支持部と、
前記内側支持部によって支持される内側縁と前記外側支持部によって支持される外側縁を有し、前記軸線を中心とする環状の領域において複数の基板載置領域を提供する一以上の載置台と、
前記一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給するガス供給部と、
前記一以上の載置台を加熱する加熱部であり、前記内側支持部と前記外側支持部の間、且つ、前記一以上の載置台の下方において固定配置された該加熱部と、
を備える成膜装置。 A processing vessel;
An exhaust device;
An inner support portion having a cylindrical shape and provided rotatably around the axis in the processing container;
A cylindrical shape, provided coaxially with the inner support in the processing vessel, and an outer support provided rotatably about the axis;
One or more mounting bases having an inner edge supported by the inner supporting part and an outer edge supported by the outer supporting part, and providing a plurality of substrate mounting areas in an annular area centered on the axis; ,
A gas supply unit for supplying a processing gas from above the one or more mounting tables toward the one or more mounting tables;
A heating unit for heating the one or more mounting tables, the heating unit fixedly disposed between the inner support unit and the outer support unit and below the one or more mounting tables;
A film forming apparatus comprising: 前記一以上の載置台として、前記軸線中心に配列される扇形形状の複数の載置台を備える、請求項１に記載の成膜装置。   The film forming apparatus according to claim 1, comprising a plurality of fan-shaped mounting tables arranged at the center of the axis as the one or more mounting tables. 前記処理容器には、前記複数の載置台を通過させるための開口が形成されており、
前記開口を開閉させるためのゲートバルブを更に備え、
前記開口の大きさは、前記外側支持部の直径よりも小さい、
請求項２に記載の成膜装置。 In the processing container, an opening for passing the plurality of mounting tables is formed,
A gate valve for opening and closing the opening;
The size of the opening is smaller than the diameter of the outer support;
The film forming apparatus according to claim 2. 前記内側支持部と前記外側支持部の間に配置され、前記加熱部から照射された光を前記載置台へ向けて反射させる反射部を更に備える、請求項１〜３のいずれか一項に記載の成膜装置。   It is arrange | positioned between the said inner side support part and the said outer side support part, and is further provided with the reflection part which reflects the light irradiated from the said heating part toward the said mounting table. Film forming equipment. 処理容器と、
排気装置と、
円筒形状を有し、前記処理容器内において軸線中心に回転可能に設けられた内側支持部と、
前記内側支持部によって支持される内側縁を有し、前記軸線を中心とする環状の領域において複数の基板載置領域を提供する一以上の載置台と、
前記一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給するガス供給部と、
前記一以上の載置台を加熱する加熱部であり、前記一以上の載置台の下方において固定配置された該加熱部と、
を備える成膜装置。 A processing vessel;
An exhaust device;
An inner support portion having a cylindrical shape and provided rotatably around the axis in the processing container;
One or more mounting tables having an inner edge supported by the inner support portion and providing a plurality of substrate mounting regions in an annular region centered on the axis;
A gas supply unit for supplying a processing gas from above the one or more mounting tables toward the one or more mounting tables;
A heating unit that heats the one or more mounting tables, the heating unit fixedly disposed below the one or more mounting tables;
A film forming apparatus comprising: 処理容器と、
排気装置と、
円筒形状を有し、前記処理容器内において軸線中心に回転可能に設けられた外側支持部と、
前記外側支持部によって支持される外側縁を有し、前記軸線を中心とする環状の領域において複数の基板載置領域を提供する一以上の載置台と、
前記一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給するガス供給部と、
前記一以上の載置台を加熱する加熱部であり、前記一以上の載置台の下方において固定配置された該加熱部と、
を備える成膜装置。 A processing vessel;
An exhaust device;
An outer support portion having a cylindrical shape and provided rotatably around the axis in the processing container;
One or more mounting tables having an outer edge supported by the outer support portion and providing a plurality of substrate mounting regions in an annular region centered on the axis;
A gas supply unit for supplying a processing gas from above the one or more mounting tables toward the one or more mounting tables;
A heating unit that heats the one or more mounting tables, the heating unit fixedly disposed below the one or more mounting tables;
A film forming apparatus comprising: 処理容器と、
排気装置と、
前記処理容器内において、軸線を中心とする環状の載置台載置領域を提供する環状支持部と、
前記環状支持部が前記軸線中心に回転可能となるように前記環状支持部の内側縁を支持する内側支持部と、
前記環状支持部が前記軸線中心に回転可能となるように前記環状支持部の外側縁を支持する外側支持部と、
前記環状支持部の前記載置台載置領域に載置され、前記軸線を中心とする環状の領域において複数の基板載置領域を提供する一以上の載置台と、
前記一以上の載置台の上方から該一以上の載置台に向けて処理ガスを供給するガス供給部と、
前記一以上の載置台を加熱する加熱部であり、前記内側支持部と前記外側支持部の間、且つ、前記一以上の載置台の下方において固定配置された該加熱部と、
を備える成膜装置。 A processing vessel;
An exhaust device;
In the processing container, an annular support part that provides an annular mounting table mounting region centered on the axis,
An inner support that supports an inner edge of the annular support so that the annular support is rotatable about the axis; and
An outer support portion that supports an outer edge of the annular support portion so that the annular support portion can rotate about the axis;
One or more mounting tables that are mounted on the mounting table mounting area of the annular support portion and provide a plurality of substrate mounting areas in an annular area centered on the axis;
A gas supply unit for supplying a processing gas from above the one or more mounting tables toward the one or more mounting tables;
A heating unit for heating the one or more mounting tables, the heating unit fixedly disposed between the inner support unit and the outer support unit and below the one or more mounting tables;
A film forming apparatus comprising:
JP2012265136A 2012-12-04 2012-12-04 Film formation device Pending JP2014110378A (en)

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