JP7002302B2 - Film forming equipment - Google Patents

Description

The present invention relates to a film forming apparatus.

Wireless communication devices such as mobile phones are equipped with a large number of semiconductor devices, which are electronic components. Semiconductor devices are required to suppress the influence of electromagnetic waves on the inside and outside, such as leakage of electromagnetic waves to the outside, in order to prevent the influence on communication characteristics. Therefore, a semiconductor device having a shielding function against electromagnetic waves is used.

Generally, a semiconductor device is formed by mounting a semiconductor chip on an interposer substrate as a substrate for relaying to a mounting substrate and sealing the semiconductor chip with a resin. A semiconductor device having a shielding function has been developed by providing a conductive electromagnetic wave shielding film on the upper surface and the side surface of the sealing resin (see Patent Document 1).

Such an electromagnetic wave shielding film can be a laminated film of a plurality of types of metal materials. For example, an electromagnetic wave shielding film having a laminated structure in which a Cu film is formed on a SUS film and a SUS film is further formed on the Cu film is known.

In the electromagnetic wave shielding film, it is necessary to lower the electrical resistivity in order to obtain a sufficient shielding effect. Therefore, the electromagnetic wave shielding film is required to have a certain thickness. In a semiconductor device, it is generally considered that good shielding characteristics can be obtained if the film thickness is about 1 μm to 10 μm. It is known that in the electromagnetic wave shielding film having a laminated structure of SUS, Cu, and SUS, a good shielding effect can be obtained if the film thickness is about 1 μm to 5 μm.

International Publication No. 2013/035819

A plating method is known as a method for forming an electromagnetic wave shielding film. However, since the plating method requires a wet process such as a pretreatment step, a plating treatment step, and a posttreatment step such as washing with water, an increase in the manufacturing cost of the semiconductor device is unavoidable.

Therefore, the sputtering method, which is a dry process, is attracting attention. As a film forming apparatus by a sputtering method, a plasma processing apparatus that forms a film using plasma has been proposed. The plasma processing device introduces an inert gas into a vacuum vessel in which the target is placed and applies a DC voltage. The plasma-generated inert gas ions are made to collide with the target of the film-forming material, and the material knocked out from the target is deposited on the work to form a film.

A general plasma processing apparatus is used for forming a film having a thickness of 10 to several 100 nm, which can be formed in a processing time of several tens of seconds to several minutes. However, as described above, it is necessary to form a film having a thickness of micron level as the electromagnetic wave shielding film. Since the sputtering method is a technique for forming a film by depositing particles of a film-forming material on a film-forming object, the thicker the film to be formed, the longer the time required to form the film.

Therefore, in order to form the electromagnetic wave shielding film, a processing time of about several tens of minutes to one hour, which is longer than that of a general sputtering method, is required. For example, in an electromagnetic wave shielding film having a laminated structure of SUS, Cu, and SUS, it may take a little over one hour to obtain a film thickness of 5 μm.

Then, in the sputtering method using plasma, the package which is the exterior of the semiconductor device is continuously exposed to the heat of plasma during this processing time. As a result, the package may be heated to around 200 ° C. until a film having a thickness of 5 μm is obtained.

On the other hand, the heat resistant temperature of the package is about 200 ° C. for temporary heating of about several seconds to several tens of seconds, but is generally about 150 ° C. for heating for more than several minutes. Therefore, it has been difficult to form a micron-level electromagnetic wave shielding film by using a general plasma sputtering method.

In order to deal with this, it is conceivable to provide a cooling device for suppressing the temperature rise of the semiconductor package in the plasma processing device. In this case, the device configuration becomes complicated and large.

An object of the present invention is to provide a film forming apparatus capable of suppressing heating of electronic components with a simple configuration.

In order to achieve the above object, the present invention
The chamber, which is the container into which the sputter gas is introduced, and
A film forming processing unit provided in the chamber, which has a sputtering source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on an electronic component by the sputtering source.
A tray installed in the processing area of the film forming processing unit and having a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area .
When the adhesive force between the first adhesive surface and the non-adhesive surface is Fa, and the adhesive force between the second adhesive surface and the above-mentioned mounting surface is Fb, Fa <Fb. It is a feature.

Further, the present invention
The chamber, which is the container into which the sputter gas is introduced, and
A film forming processing unit provided in the chamber, which has a sputtering source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on an electronic component by the sputtering source.
A tray installed in the processing area of the film forming processing unit and having a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area.
The adhesive sheet is characterized in that the peeling resistance of the first adhesive surface to the non-adhesive surface is smaller than the peeling resistance of the second adhesive surface to the previously described placement surface.

Further, the present invention
The chamber, which is the container into which the sputter gas is introduced, and
A transport unit provided in the chamber for circulating and transporting electronic components,
The electronic component that is circulated and transported by the transport unit has a sputter source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on the electronic component by the sputtering source.
A tray that is transported by the transport unit and has a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area .
When the adhesive force between the first adhesive surface and the non-adhesive surface is Fa, and the adhesive force between the second adhesive surface and the above-mentioned mounting surface is Fb, Fa <Fb. It is a feature.

Further, the present invention
The chamber, which is the container into which the sputter gas is introduced, and
A transport unit provided in the chamber for circulating and transporting electronic components,
The electronic component that is circulated and transported by the transport unit has a sputter source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on the electronic component by the sputtering source.
A tray that is transported by the transport unit and has a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area.
The adhesive sheet is characterized in that the peeling resistance of the first adhesive surface to the non-adhesive surface is smaller than the peeling resistance of the second adhesive surface to the previously described placement surface.

A metal frame defining a part or all of the outer edge of the sticking area is attached to the adhesive surface of the holding sheet, and the first contact surface is a non-adhesive surface area corresponding to the sticking area. In addition to the whole of the above, the region of the non-adhesive surface corresponding to the frame may also be in close contact.

The close contact sheet may have a thermal conductivity of 0.1 W / (m · K) or more.

According to the present invention, it is possible to provide a film forming apparatus capable of suppressing heating of electronic components with a simple configuration.

It is a schematic cross-sectional view which shows the electronic component of an embodiment. It is a perspective view of the film forming apparatus of embodiment. It is a perspective plan view of the film forming apparatus of embodiment. FIG. 3 is a schematic vertical sectional view taken along the line AA of FIG. It is a perspective view which shows the tray in which the electronic component is arranged. It is an exploded perspective view which shows the structure of the mounting part. It is a block diagram which shows the control device of an embodiment. It is explanatory drawing which shows the placement of a mounting part on a tray, and the separation of a close contact sheet. It is explanatory drawing which shows the film formation on the electronic component. It is explanatory drawing which shows the film formation condition of a comparative example and an Example. It is a graph which shows the temperature change with the passage of time of the comparative example. It is a graph which shows the temperature change with the passage of time of an Example.

An embodiment of the present invention (hereinafter referred to as the present embodiment) will be specifically described with reference to the drawings.

[Electronic components]
As shown in FIG. 1, the electronic component 10 to be formed into a film of the present embodiment has a package 12 in which the element 11 is sealed. The element 11 is a surface mount component such as a semiconductor chip, a diode, a transistor, a capacitor, and a SAW filter. In the following description, an example in which the semiconductor chip is the element 11 will be described. The semiconductor chip referred to here is configured as an integrated circuit in which a plurality of electronic elements are integrated.

The element 11 is mounted on the surface of the substrate 14. The substrate 14 has a circuit pattern formed on the surface of a plate made of ceramic, glass, epoxy resin, or the like. The element 11 and the circuit pattern are connected by soldering.

The surface of the substrate 14 on which the element 11 is mounted is sealed with a synthetic resin so as to cover the element 11 to form the package 12. The shape of the package 12 is a substantially rectangular parallelepiped shape.

In this embodiment, the electromagnetic wave shielding film 13 is formed on the top surface 12a and the side surface 12b of the electronic component 10 as described above. The electromagnetic wave shielding film 13 is a film that shields electromagnetic waves formed of a conductive material. In order to obtain the shielding effect, the electromagnetic wave shielding film 13 may be formed at least on the top surface 12a of the package 12. The electromagnetic wave shield film 13 on the side surface 12b is for grounding. The top surface 12a of the package 12 is an outer surface opposite to the surface mounted on the product.

When the top surface 12a is placed horizontally, it is the upper surface at the highest position, but when it is mounted, it may or may not face upward. The side surface 12b is an outer peripheral surface formed at a different angle with respect to the top surface 12a. An angle may be formed between the top surface 12a and the side surface 12b, or the surface surface 12a and the side surface 12b may be continuous by a curved surface.

[Film formation device]
The film forming apparatus 100 of this embodiment will be described with reference to FIGS. 2 to 7. The film forming apparatus 100 is an apparatus for forming an electromagnetic wave shielding film 13 on the outer surface of the package 12 of each electronic component 10 by sputtering. As shown in FIG. 2, in the film forming apparatus 100, when the rotary table 31 rotates, the electronic component 10 on the tray 34 held by the holding portion 33 moves along a circumferential trajectory and faces the spatter source 4. This is a device for forming a film by adhering particles sputtered from a target 41 (see FIG. 3) when passing through a position to be formed.

As shown in FIGS. 2 and 3, the film forming apparatus 100 includes a chamber 20, a transport unit 30, a film forming processing unit 40A and 40B, a surface treatment unit 50, a load lock unit 60, and a control device 70.

[Chamber]
The chamber 20 is a container into which the reaction gas G is introduced. The reaction gas G includes a sputtering gas G1 for sputtering and a process gas G2 for various treatments (see FIG. 4). In the following description, when the sputtering gas G1 and the process gas G2 are not distinguished, they may be referred to as a reaction gas G. The sputtering gas G1 is a gas for colliding the generated ions or the like with the target 41 by the plasma generated by the application of electric power to carry out sputtering on the package 12 of the electronic component 10. For example, an inert gas such as argon gas can be used as the sputter gas G1.

The process gas G2 is a gas for performing surface treatment by etching or ashing. Hereinafter, such surface treatment may be referred to as reverse sputtering. The process gas G2 can be appropriately changed depending on the purpose of the treatment. For example, when etching is performed, an inert gas such as argon gas can be used as the etching gas. In the present embodiment, the surface of the electronic component 10 is cleaned and roughened with argon gas. For example, the adhesion of the film can be enhanced by cleaning the surface and roughening the surface on the nano-order.

The space inside the chamber 20 forms a vacuum chamber 21. The vacuum chamber 21 is a space that is airtight and can be evacuated by depressurization. For example, as shown in FIGS. 2 and 4, the vacuum chamber 21 is a cylindrical sealed space formed by the ceiling 20a, the inner bottom surface 20b, and the inner peripheral surface 20c inside the chamber 20.

As shown in FIG. 4, the chamber 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for ensuring the flow of gas between the vacuum chamber 21 and the outside and performing exhaust E. The exhaust port 22 is formed, for example, at the bottom of the chamber 20. An exhaust unit 23 is connected to the exhaust port 22. The exhaust unit 23 includes piping, a pump, a valve and the like (not shown). Due to the exhaust treatment by the exhaust unit 23, the pressure inside the vacuum chamber 21 is reduced.

The introduction port 24 is an opening for introducing the sputter gas G1 in the vicinity of the target 41 of the vacuum chamber 21. A gas supply unit 25 is connected to the introduction port 24. One gas supply unit 25 is provided for each target 41. Further, the gas supply unit 25 includes a gas supply source for the reaction gas G (not shown), a pump, a valve, and the like, in addition to the piping. The gas supply unit 25 introduces the sputter gas G1 into the vacuum chamber 21 from the introduction port 24. The upper part of the chamber 20 is provided with an opening 21a into which the surface treatment portion 50 is inserted, as will be described later.

[Transport section]
The transport unit 30 is a device provided in the chamber 20 that circulates and transports the electronic component 10 along a circumferential locus. Circular transport means to orbit the tray 34 on which the electronic component 10 is mounted in a circumferential locus. The locus in which the tray 34 moves by the transport unit 30 is referred to as a transport path L. The transport unit 30 has a rotary table 31, a motor 32, and a holding unit 33. Further, the tray 34 on which the mounting portion 35 is mounted is held in the holding portion 33.

The rotary table 31 is a circular plate. The motor 32 is a drive source that applies a driving force to the rotary table 31 and rotates it around the center of a circle. The holding unit 33 is a component that holds the tray 34, which will be described later, which is conveyed by the conveying unit 30. On the top surface of the rotary table 31, a plurality of holding portions 33 are arranged at positions equal to each other in circumference. For example, the regions in which the holding portions 33 hold the tray 34 are formed in a direction parallel to the tangent line of the circle in the circumferential direction of the rotary table 31, and are provided at equal intervals in the circumferential direction. More specifically, the holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like that holds the tray 34. It can be configured by a mechanical chuck and an adhesive chuck.

As shown in FIG. 5, the tray 34 is a member having a flat mounting surface 34a. The mounting surface 34a is one flat surface of a rectangular flat plate. A peripheral wall portion 34b is formed on the peripheral portion of the mounting surface 34a. The peripheral wall portion 34b is a frame raised in a rectangular shape surrounding the mounting surface 34a. The material of the tray 34 is preferably a material having high thermal conductivity, for example, metal. In this embodiment, the material of the tray 34 is SUS. The material of the tray 34 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof.

The mounting portion 35 is mounted on the mounting surface 34a of the tray 34 and is a member for mounting the electronic component 10. The mounting portion 35 has a holding sheet 36, a frame 37, and a close contact sheet 38. As shown in FIG. 6, the holding sheet 36 is a flat sheet and has an adhesive surface 36a having adhesiveness on one surface. The adhesive surface 36a covers the entire one surface of the holding sheet 36. The adhesive surface 36a has a sticking area S for sticking the electronic component 10. In the present embodiment, the holding sheet 36 is a square, and the sticking area S is a square area smaller than the outer edge of the holding sheet 36. However, the sticking area S can be the entire surface of the holding sheet 36. The other surface of the holding sheet 36 is a non-adhesive surface 36b that does not have adhesiveness. The non-adhesive surface 36b can be, for example, a smooth surface.

The frame 37 is a member to which the adhesive surface 36a of the holding sheet 36 is attached and defines a part or all of the outer edge of the attachment area S. The material of the frame 37 is preferably a material having high thermal conductivity, for example, metal. In this embodiment, the material of the frame 37 is SUS. As with the tray 34, the material of the frame 37 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof. The material of the tray 34 and the material of the frame 37 may be the same or different. The frame 37 of the present embodiment surrounds the sticking area S and defines the entire outer edge of the sticking area S. The frame 37 is a rectangular plate-shaped member, and a rectangular through hole 37a is formed in the center thereof. The inner edge of the through hole 37a coincides with the outer edge of the sticking area S. The outer shape of the frame 37 matches the outer shape of the holding sheet 36.

The adhesive surface 36a of the holding sheet 36 is attached to the bottom surface of the frame 37 so as to have outer shapes that match each other and close the bottom surface side of the through hole 37a. Therefore, the sticking region S of the adhesive surface 36a is exposed from the through hole 37a on the top surface side of the frame 37.

As shown in FIGS. 5 and 6, the plurality of electronic components 10 are adhesively held on the exposed sticking area S in the frame 37. The plurality of electronic components 10 are arranged and arranged in a matrix at intervals so that a film is formed not only on the top surface 12a but also on the side surface 12b.

As shown in FIG. 6, the contact sheet 38 is a flat sheet, having a first contact surface 38a on one surface and a second contact surface 38b on the other surface. The first adhesive surface 38a is an adhesive surface that adheres to the non-adhesive surface 36b of the holding sheet 36. The first contact surface 38a is in close contact with at least the entire region of the non-adhesive surface 36b corresponding to the sticking region S. The region of the non-adhesive surface 36b corresponding to the sticking region S means the region of the non-adhesive surface 36b directly behind the sticking region S. Further, the first contact surface 38a is also in close contact with the region of the non-adhesive surface 36b corresponding to the frame 37. That is, the first contact surface 38a is in close contact with the region of the non-adhesive surface 36b directly behind the frame 37. In this embodiment, the external dimensions of the frame 37, the holding sheet 36, and the close contact sheet 38 are the same.

The second contact surface 38b is an adhesive surface that adheres to the mounting surface 34a of the tray 34. In this embodiment, the frame 37, the holding sheet 36, and the contact sheet 38 are all laminated in such a manner that the outer shapes match, and the entire second contact surface 38b is in close contact with the tray 34.

Here, if the adhesive force between the first adhesive surface 38a and the non-adhesive surface 36b of the holding sheet 36 is Fa, and the adhesive force between the second adhesive surface 38b and the mounting surface 34a of the tray 34 is Fb, then Fa < Fb. In addition, for example, it is preferable to set 2 ≦ (Fb—Fa). Further, the peeling resistance of the non-adhesive surface 36b of the holding sheet 36 to the first contact surface 38a is made of a material smaller than the peel resistance of the mounting surface 34a of the tray 34 to the second contact surface 38b. For example, it is preferable that Fa is 0.02 to 0.03 [N / width 25 mm] and Fb is 4 to 7 [N / width 25 mm]. However, the present invention is not limited to these values. Further, the adhesive sheet 38 preferably has a thermal conductivity of 0.1 W / (m · K) or more. The higher the thermal conductivity, the better, but if it is about 1 W / (m · K), a good cooling effect can be obtained.

As the material of the holding sheet 36 and the adhesion sheet 38, it is conceivable to use a heat-resistant synthetic resin. For example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PI (polyimide) and the like can be used, but the present invention is not limited thereto. It is conceivable that the adhesive surface 36a, the first adhesive surface 38a, and the second adhesive surface 38b are adhesive surfaces to which an adhesive is applied to the surface of the sheet or the surfaces are made adhesive. As the material of the adhesive or the adhesive surface, various adhesive materials such as silicone-based and acrylic-based resins, urethane resin, and epoxy resin can be used.

As shown in FIGS. 5 and 6, the plurality of electronic components 10 are attached in a matrix shape in the attachment region S of the adhesive surface 36a of the mounting portion 35. By preparing a plurality of such mounting portions 35 and mounting them on the mounting surface 34a of the tray 34 via the contact sheet 38, the second contact surface 38b of the contact sheet 38 is brought into close contact with the mounting surface 34a. Let me. However, the mounting unit 35 may be mounted alone on the tray 34.

In this way, the electronic component 10 is positioned on the rotary table 31 by the tray 34, the mounting portion 35, and the close contact sheet 38 held by the holding portion 33. In this embodiment, since the six holding portions 33 are provided, the six trays 34 are held on the rotary table 31 at intervals of 60 °. However, the number of holding portions 33 may be one or a plurality.

[Film film processing unit]
The film forming processing units 40A and 40B are processing units for forming a film on the electronic component 10 conveyed by the conveying unit 30. Hereinafter, when the plurality of film forming processing units 40A and 40B are not distinguished, the film forming processing unit 40 will be described. As shown in FIG. 4, the film forming processing unit 40 has a spatter source 4, a partitioning unit 44, and a power supply unit 6.

(Spatter source)
The spatter source 4 is a supply source of the film-forming material for forming a film by depositing the film-forming material on the electronic component 10 by sputtering. The spatter source 4 has a target 41, a backing plate 42, and an electrode 43. The target 41 is formed of a film-forming material deposited on the electronic component 10 to form a film, and is provided at a position facing the transport path L apart from the target 41. As shown in FIG. 3, the targets 41 of the present embodiment are arranged in a direction in which the two targets 41A and 41B are orthogonal to the transport direction, that is, in the radial direction of rotation of the rotary table 31. Hereinafter, when the targets 41A and 41B are not distinguished, the target 41 is used. The bottom surface side of the target 41 faces the electronic component 10 moved by the transport unit 30 at a distance. It should be noted that the processing region, which is an execution region to which the film-forming material can be adhered by the two targets 41A and 41B, is larger than the size of the tray 34 in the radial direction of the rotary table 31.

As the film forming material, for example, Cu, Ni, Fe, SUS and the like are used as described later. However, various materials can be applied as long as the material is formed by sputtering. Further, the target 41 has, for example, a cylindrical shape. However, other shapes such as a long cylinder shape and a prism shape may be used.

The backing plate 42 is a member that holds the target 41. The electrode 43 is a conductive member for applying electric power to the target 41 from the outside of the chamber 20. The spatter source 4 is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.

(Separation section)
The partition portion 44 is a member that partitions the film forming positions M1 and M2 on which the electronic component 10 is formed by the spatter source 4, and the processing position M3 for performing surface treatment. Hereinafter, when the film forming positions M1 and M2 are not distinguished, the film forming position M will be described. As shown in FIG. 3, the partition portion 44 has square wall plates 44a and 44b arranged radially from the center of the circumference of the transport path L, that is, the rotation center of the rotary table 31 of the transport portion 30. The wall plates 44a and 44b are provided, for example, on the ceiling of the vacuum chamber 21 at positions sandwiching the target 41. The lower end of the partition portion 44 faces the rotary table 31 with a gap through which the electronic component 10 passes. The presence of the partition 44 can prevent the reaction gas G and the film-forming material from diffusing into the vacuum chamber 21.

The film formation position M is a space including the target 41 of the spatter source 4 and separated by the partition portion 44. More specifically, as shown in FIG. 3, the film forming positions M1 and M2 and the processing position M3 are formed by the wall plates 44a and 44b of the partition portion 44 and the inner peripheral surface 20c of the chamber 20 when viewed from the plane direction. It is a space surrounded by a fan shape. The horizontal range of the film forming positions M1 and M2 and the processing position M3 is a region separated by a pair of wall plates 44a and 44b. The film-forming material is deposited as a film on the electronic component 10 passing through the position facing the target 41 in the film-forming position M. This film formation position M is a region where most of the film formation is performed, but even in a region outside the film formation position M, there is leakage of the film formation material from the film formation position M, so that the film is completely deposited. Not without. That is, the processing area where the film formation is performed is a slightly wider area than the film formation position M.

(Power supply part)
The power supply unit 6 is a component unit that applies electric power to the target 41. By applying electric power to the target 41 by the power supply unit 6, the sputtering gas G1 can be turned into plasma and the film-forming material can be deposited on the electronic component 10. In the present embodiment, the power supply unit 6 is, for example, a DC power supply to which a high voltage is applied. In the case of a device that performs high-frequency sputtering, an RF power source can also be used. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 41 side. This avoids the difficulty of connecting to the power supply unit 6 in order to make the movable rotary table 31 have a negative potential.

The plurality of film forming processing units 40 form a film composed of a plurality of layers of the film forming material by selectively depositing the film forming material. In particular, in the present embodiment, the spatter source 4 corresponding to different types of film forming materials is included, and the film forming materials are selectively deposited to form a film composed of layers of a plurality of types of film forming materials. The inclusion of the spatter source 4 corresponding to different types of film forming materials means that even if the film forming materials of all the film forming processing units 40 are different, the plurality of film forming processing units 40 are common film forming materials. Including cases where others are different from this. To selectively deposit one type of film-forming material one by one means that while the film-forming processing unit 40 of any one type of film-forming material performs film-forming, the film-forming unit 40 of the other film-forming material forms a film. It means not to do. Further, the film forming process unit 40 or the film forming position M during film forming means that the film forming process section 40 or the film forming position M is in a state where electric power is applied to the target 41 of the film forming process section 40 to form a film on the electronic component 10. It refers to the film formation position M.

In the present embodiment, two film forming processing units 40A and 40B are arranged with the surface processing unit 50 interposed therebetween in the transport direction of the transport path L. The film forming positions M1 and M2 correspond to the two film forming processing units 40A and 40B. Of these film forming processing sections 40A and 40B, the film forming material of the film forming processing section 40A is SUS. That is, the sputtering source 4 of the film forming processing unit 40A includes targets 41A and 41B made of SUS. In the other film forming processing section 40B, the film forming material is Cu. That is, the sputtering source 4 of the film forming processing unit 40B includes targets 41A and 41B made of Cu. In the present embodiment, while any one of the film forming processing units 40 is performing the film forming processing, the other film forming processing unit 40 does not perform the film forming processing.

[Surface treatment part]
The surface treatment unit 50 is a processing unit that performs surface treatment, that is, reverse sputtering, on the electronic component 10 transported by the transport unit 30. The surface treatment portion 50 is provided at the treatment position M3 partitioned by the partition portion 44. The surface treatment unit 50 has a treatment unit 5. A configuration example of the processing unit 5 will be described with reference to FIGS. 3 and 4.

The processing unit 5 includes a tubular electrode 51 provided from the upper part to the inside of the chamber 20. The tubular electrode 51 has a square tubular shape, has an opening 51a at one end, and is closed at the other end. The tubular electrode 51 is attached to the opening 21a provided on the top surface of the chamber 20 via the insulating member 52 so that one end having the opening 51a faces the rotary table 31. The side wall of the tubular electrode 51 extends inside the chamber 20.

A flange 51b projecting outward is provided at the end of the tubular electrode 51 opposite to the opening 51a. The insulating member 52 is fixed between the flange 51b and the peripheral edge of the opening 21a of the chamber 20 to keep the inside of the chamber 20 airtight. The insulating member 52 may be made of a material such as PTFE (polytetrafluoroethylene), for example, as long as it has an insulating property and is not limited to a specific material.

The opening 51a of the tubular electrode 51 is arranged at a position facing the transport path L of the rotary table 31. As the transport unit 30, the rotary table 31 transports the tray 34 on which the electronic component 10 is mounted and passes the tray 34 facing the opening 51a. The opening 51a of the tubular electrode 51 is larger than the size of the tray 34 in the radial direction of the rotary table 31.

As shown in FIG. 3, the tubular electrode 51 has a fan shape whose diameter increases from the center side to the outside in the radial direction of the rotary table 31 when viewed from the plane direction. The fan shape here means the shape of the fan surface of the fan. The opening 51a of the tubular electrode 51 is also fan-shaped. The speed at which the tray 34 on the rotary table 31 passes through the position facing the opening 51a becomes slower toward the center side in the radial direction of the rotary table 31 and becomes faster toward the outside. Therefore, if the opening 51a is simply a rectangle or a square, there is a difference in the time for the electronic component 10 to pass the position facing the opening 51a between the center side and the outside in the radial direction. By increasing the diameter of the opening 51a from the center side in the radial direction toward the outside, the time for passing through the opening 51a can be made constant, and the plasma treatment described later can be made uniform. However, a rectangle or a square may be used as long as the difference in passing time does not cause a problem in the product.

As described above, the tubular electrode 51 penetrates the opening 21a of the chamber 20 and is partially exposed to the outside of the chamber 20. The portion of the tubular electrode 51 exposed to the outside of the chamber 20 is covered with the housing 53 as shown in FIG. The housing 53 keeps the space inside the chamber 20 airtight. The portion of the tubular electrode 51 located inside the chamber 20, that is, the periphery of the side wall is covered with the shield 54.

The shield 54 is a fan-shaped square tube coaxial with the tubular electrode 51, and is larger than the tubular electrode 51. The shield 54 is connected to the chamber 20. Specifically, the shield 54 is erected from the edge of the opening 21a of the chamber 20, and the end extending toward the inside of the chamber 20 is located at the same height as the opening 51a of the tubular electrode 51. Since the shield 54 acts as a cathode like the chamber 20, it is preferable to use a conductive metal member having low electrical resistance. The shield 54 may be integrally molded with the chamber 20, or may be attached to the chamber 20 by using a fixing bracket or the like.

The shield 54 is provided to stably generate plasma in the tubular electrode 51. Each side wall of the shield 54 is provided so as to extend substantially parallel to each side wall of the tubular electrode 51 through a predetermined gap. If the gap becomes too large, the capacitance becomes small and the plasma generated in the tubular electrode 51 enters the gap, so it is desirable that the gap be as small as possible. However, even if the gap becomes too small, the capacitance between the tubular electrode 51 and the shield 54 becomes large, which is not preferable. The size of the gap may be appropriately set according to the capacitance required for plasma generation. Although FIG. 4 shows only two side wall surfaces extending in the radial direction of the shield 54 and the tubular electrode 51, there is also a radius between the two side wall surfaces extending in the circumferential direction of the shield 54 and the tubular electrode 51. A gap of the same size as the side wall surface in the direction is provided.

Further, a process gas introduction unit 55 is connected to the tubular electrode 51. In addition to piping, the process gas introduction unit 55 includes a gas supply source for process gas G2 (not shown), a pump, a valve, and the like. The process gas G2 is introduced into the tubular electrode 51 by the process gas introduction unit 55. As described above, the process gas G2 can be appropriately changed depending on the purpose of the treatment.

An RF power supply 56 for applying a high frequency voltage is connected to the tubular electrode 51. A matching box 57, which is a matching circuit, is connected in series to the output side of the RF power supply 56. The RF power supply 56 is also connected to the chamber 20. When a voltage is applied from the RF power source 56, the tubular electrode 51 acts as an anode, and the chamber 20, the shield 54 and the rotary table 31 act as a cathode. The matching box 57 stabilizes the plasma discharge by matching the impedances on the input side and the output side. The chamber 20 and the rotary table 31 are grounded. The shield 54 connected to the chamber 20 is also grounded. Both the RF power supply 56 and the process gas introduction portion 55 are connected to the tubular electrode 51 via a through hole provided in the housing 53.

When argon gas, which is a process gas G2, is introduced into the tubular electrode 51 from the process gas introduction unit 55 and a high frequency voltage is applied from the RF power supply 56 to the tubular electrode 51, the argon gas is turned into plasma, and electrons, ions and radicals are generated. Etc. occur.

(Road lock part)
The load lock unit 60 carries the tray 34, in which the unprocessed electronic components 10 are mounted from the outside via the mounting unit 35, into the vacuum chamber 21 by a transport means (not shown) while maintaining the vacuum of the vacuum chamber 21. This is a device for carrying out the tray 34 on which the processed electronic components 10 are mounted via the mounting portion 35 to the outside of the vacuum chamber 21. Since a well-known structure can be applied to the load lock portion 60, the description thereof will be omitted.

[Control device]
The control device 70 is a device that controls each part of the film forming apparatus 100. The control device 70 can be configured by, for example, a dedicated electronic circuit, a computer operating with a predetermined program, or the like. That is, the control contents are programmed for the control related to the introduction and exhaust of the sputter gas G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply unit 6, the RF power supply 56, the control of the rotation of the rotary table 31, and the like. , It is executed by a processing device such as a PLC or a CPU, and can correspond to a wide variety of film forming specifications.

Specifically, the contents to be controlled include the initial exhaust pressure of the film forming apparatus 100, the selection of the sputter source 4, the electric power applied to the target 41 and the tubular electrode 51, the flow rate of the sputter gas G1 and the process gas G2, the type, and the introduction. Examples include time, exhaust time, film formation time, rotation speed of the motor 32, and the like.

The configuration of the control device 70 for executing the operation of each part as described above will be described with reference to FIG. 7, which is a virtual functional block diagram. That is, the control device 70 includes a mechanism control unit 71, a power supply control unit 72, a storage unit 73, a setting unit 74, and an input / output control unit 75.

The mechanism control unit 71 is a processing unit that controls drive sources such as an exhaust unit 23, a gas supply unit 25, a process gas introduction unit 55, a motor 32 of a transport unit 30, a load lock unit 60, valves, switches, a power supply, and the like. .. The power supply control unit 72 is a processing unit that controls the power supply unit 6 and the RF power supply 56.

The control device 70 selects the film forming process section 40 so that the film forming section of any one of the film forming materials does not form a film while the film forming section of the other film forming material forms a film. Control. That is, the power supply control unit 72 does not apply the voltage to the target 41 of the film forming processing unit 40B while the voltage is applied to the target 41 of the film forming processing unit 40A to form a film. Further, while the voltage is applied to the target 41 of the film forming processing unit 40B to form a film, the voltage is not applied to the target 41 of the film forming processing unit 40A.

The storage unit 73 is a component unit that stores information necessary for controlling the present embodiment. The setting unit 74 is a processing unit that sets the information input from the outside in the storage unit 73. The input / output control unit 75 is an interface for controlling signal conversion and input / output with each unit to be controlled.

Further, an input device 76 and an output device 77 are connected to the control device 70. The input device 76 is an input means such as a switch, a touch panel, a keyboard, and a mouse for the operator to operate the film forming apparatus 100 via the control device 70. For example, the selection of the spatter source 4 for forming a film can be input by the input means.

The output device 77 is an output means such as a display, a lamp, a meter, or the like that makes the information for confirming the state of the device visible to the operator. For example, the film forming positions M1 and M2 corresponding to the sputter source 4 on which film formation is performed and the processing position M3 on which surface treatment is performed are displayed on the output device 77 separately from the positions where film formation or processing is not performed. can do.

[motion]
The operation of the present embodiment as described above will be described below with reference to FIGS. 8 and 9 in addition to FIGS. 1 to 7 above. Although not shown, the film forming apparatus 100 carries in, conveys, and carries out the tray 34 on which the electronic component 10 is mounted via the mounting portion 35 by a conveying means such as a conveyor and a robot arm.

As shown in FIGS. 5 and 8A, the electronic components 10 are attached to the attachment area S in the frame 37 of the mounting portion 35 by arranging them in a matrix at intervals. Such a plurality of mounting portions 35 are mounted on the mounting surface 34a of the tray 34. As a result, as shown in FIG. 8B, the second contact surface 38b of the contact sheet 38 comes into close contact with the mounting surface 34a. As will be described later, the contact sheet 38 is provided on the mounting surface 34a, such as the contact sheet 38 attached to the mounting surface 34a and the contact sheet 38 formed on the mounting surface 34a by coating, coating, processing, or the like. The non-adhesive surface 36b of the holding sheet 36 attached to the frame 37 may be attached to the close contact sheet 38. That is, the holding sheet 36 and the contact sheet 38 are integrated in the process of mounting the mounting portion 35 on the tray 34, such as the holding sheet 36 being attached to the contact sheet 38 provided on the tray 34. The mounting portion 35 is included in the embodiment having the holding sheet 36 and the close contact sheet 38. In the case of the contact sheet 38 formed on the mounting surface 34a by pasting, coating, coating or processing, the boundary surface between the contact sheet 38 and the tray 34 becomes the second contact surface 38b.

The plurality of trays 34 are sequentially carried into the chamber 20 by the transport means of the load lock unit 60. The rotary table 31 sequentially moves the empty holding portion 33 to the loading location from the load lock portion 60. The holding unit 33 individually holds the trays 34 carried in by the transport means. In this way, as shown in FIGS. 2 and 3, all the trays 34 on which the electronic components 10 to be film-formed are mounted are placed on the rotary table 31.

The film forming process for the electronic component 10 introduced into the film forming apparatus 100 as described above will be described with reference to FIGS. 3 and 4. In the following operation, the surface of the electronic component 10 is cleaned and roughened by the surface treatment unit 50, and then the film forming processing units 40A and 40B form the electromagnetic wave shielding film 13 on the surface of the electronic component 10. This is an example. The electromagnetic wave shielding film 13 is formed by alternately laminating SUS layers and Cu layers. The SUS layer directly formed on the electronic component 10 serves as a base for increasing the degree of adhesion with the mold resin and Cu. The Cu layer in the middle is a layer having a function of shielding electromagnetic waves. The uppermost SUS layer is a protective layer for preventing rust and the like of Cu.

First, the exhaust unit 23 exhausts the vacuum chamber 21 to reduce the pressure to create a vacuum. The rotary table 31 rotates and reaches a predetermined rotation speed. The electronic component 10 passes through a position of the processing unit 5 facing the opening 51a of the tubular electrode 51. In the processing unit 5, argon gas, which is the process gas G2, is introduced into the tubular electrode 51 from the process gas introduction unit 55, and a high frequency voltage is applied from the RF power supply 56 to the tubular electrode 51. Argon gas is turned into plasma by applying a high frequency voltage, and electrons, ions, radicals and the like are generated. Plasma flows from the opening 51a of the tubular electrode 51, which is the anode, to the rotary table 31 which is the cathode. Ions in the plasma collide with the surface of the electronic component 10 passing under the opening 51a, so that the surface is cleaned and roughened. Then, when the surface treatment time by the surface treatment unit 50 has elapsed, the surface treatment unit 50 is stopped. That is, the supply of the process gas G2 from the process gas introduction unit 55 and the application of the voltage by the RF power supply 56 are stopped.

Next, the gas supply unit 25 of the film forming processing unit 40A supplies the sputter gas G1 around the target 41. Under this state, the electronic component 10 held by the holding portion 33 moves on the transport path L in a circular locus and passes through a position facing the spatter source 4.

Next, only in the film forming processing unit 40A, the power supply unit 6 applies electric power to the target 41. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 10 that passes through the film-forming position M1 of the film-forming processing unit 40A, and a film is formed. Here, a layer of SUS is formed. At this time, the electronic component 10 passes through the film forming position M2 of the film forming processing section 40B, but since the power is not applied to the target 41 in the film forming processing section 40B, the film forming process is not performed and the electronic component 10 is not subjected to the film forming process. Not heated. Further, the electronic component 10 is not heated even in the regions other than the film forming positions M1 and M2. In this way, the electronic component 10 releases heat in the unheated region.

After the film forming time by the film forming processing section 40A has elapsed, the film forming processing section 40A is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film forming processing unit 40B applies electric power to the target 41. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 10 that passes through the film-forming position M2 of the film-forming processing unit 40B, and a film is formed. Here, a layer of Cu is formed. This layer becomes a part of the layer of the electromagnetic wave shielding film 13. At this time, the electronic component 10 passes through the film forming position M1 of the film forming processing section 40A, but the film forming processing section 40A does not perform the film forming process because the power is not applied to the target 41, and the electronic component 10 does not perform the film forming process. Not heated. Further, the electronic component 10 is not heated even in the regions other than the film forming positions M1 and M2. In this way, the electronic component 10 releases heat in the unheated region.

After the film forming time by the film forming processing section 40B has elapsed, the film forming processing section 40B is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film forming processing unit 40A applies electric power to the target 41. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 10 that passes through the film-forming position M1 of the film-forming processing unit 40A, and a film is formed. Here, a layer of SUS is formed. At this time, the electronic component 10 passes through the film forming position M2 of the film forming processing section 40B, but the film forming processing section 40B does not perform the film forming process because the power is not applied to the target 41, and the electronic component 10 does not perform the film forming process. Not heated. Further, the electronic component 10 is not heated even in the regions other than the film forming positions M1 and M2. In this way, the electronic component 10 releases heat in the unheated region.

After the film forming time by the film forming processing section 40A has elapsed, the film forming processing section 40A is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. By repeating the film formation by the film formation processing units 40A and 40B in this way, a film in which a SUS film, a Cu film, and a SUS film are laminated is formed. Further, by repeating the same film formation, it is possible to form a film having more than three layers. As a result, from the state shown in FIG. 9A, the electromagnetic wave shielding film 13 is formed on the top surface and the side surface of the package 12 of the electronic component 10 as shown in FIG. 9B.

During the film forming process as described above, the rotary table 31 continues to rotate and continues to circulate and convey the tray 34 on which the electronic component 10 is mounted. Then, after the film forming process is completed, the tray 34 on which the electronic component 10 is mounted is sequentially positioned on the load lock portion 60 by the rotation of the rotary table 31, and is carried out by the transport means. As shown in FIG. 8C, the mounting portion 35 is peeled off from the carried-out tray 34 by peeling the holding sheet 36 from the close contact sheet 38. That is, the close contact sheet 38 is separated from the mounting portion 35. In this way, the adhesion sheet 38 remaining on the tray 34 can be reused as it is. That is, the non-adhesive surface 36b of the holding sheet 36 on which the electronic component 10 to be processed is mounted is brought into close contact with the first contact surface 38a of the contact sheet 38 on the tray 34, and the tray 34 is carried into the vacuum chamber 21. By doing so, the film forming process can be performed in the same manner as described above. Even in such an embodiment, the holding sheet 36 is attached to the close contact sheet 38 to form a mounting portion 35 including the close contact sheet 38, and a film forming apparatus 100 having the mounting portion 35 is configured. It will be. When the adhesive strength of the adhesive sheet 38 decreases after a plurality of uses, the adhesive sheet 38 may be peeled off from the tray 34, and the mounting portion 35 including the new adhesive sheet 38 may be placed on the tray 34. The number of times the close contact sheet 38 can be used can be set by an experiment or the like. When replacing the close contact sheet 38, only the close contact sheet 38 is replaced with a new one, and for the holding sheet 36 and the frame 37, either both are reused or only one of them is reused and the other is renewed. You may use a new one. After peeling off the holding sheet 36, the close contact sheet 38 may be peeled off from the tray 34 and made disposable without reusing the close contact sheet 38. That is, the contact sheet 38 remaining on the tray 34 may be peeled off and discarded each time, and the mounting portion 35 including the contact sheet 38 may be placed on the tray 34.

[Causes of heating of electronic components]
As described above, the electronic component 10 can release heat in the unheated region. This heat release is mainly performed by conducting heat to the tray 34 via the mounting portion 35. However, when the contact sheet 38 is not provided as in the present embodiment, the following problems occur.

(1) When the bottom surface of the holding sheet 36 of the mounting portion 35 is not adhesive The upper surface of the holding sheet 36 of the mounting portion 35 is provided with an adhesive surface 36a to which the electronic component 10 is attached. The bottom surface of the sheet 36 does not have adhesiveness. Therefore, if the mounting portion 35 is simply mounted on the mounting surface 34a of the tray 34, a gap is created between the bottom surface of the holding sheet 36 and the mounting surface 34a. That is, since the surface of the holding sheet 36 and the surface of the mounting surface 34a have fine irregularities, the contact area is about 10% of the whole. Since the space that is not in contact is a vacuum, there is no heat conduction. Therefore, it becomes difficult to transfer the heat of the electronic component 10 to the tray 34.

(2) When the bottom surface of the holding sheet 36 of the mounting portion 35 has adhesiveness In order to deal with the problem (1) above, it is conceivable to give the bottom surface of the holding sheet 36 adhesiveness. Then, the mounting portion 35 can be brought into close contact with the mounting surface 34a of the tray 34, and the gap between the bottom surface of the holding sheet 36 and the mounting surface 34a is significantly reduced, so that the thermal conductivity is improved. However, in this case, after the film forming process, a step of peeling off the bottom surface of the holding sheet 36 of the mounting portion 35 from the mounting surface 34a of the tray 34 is required. When the mounting portion 35 is peeled off from the mounting surface 34a, it is difficult to uniformly transmit the force to the adhered surface, so that the peeling force is partially applied and the frame 37 and the holding sheet 36 may be distorted. There is sex. When the frame 37 and the holding sheet 36 are distorted in this way, the flatness of the arrangement surface of the electronic component 10 is lost, and the arrangement interval of the electronic component 10 varies, which hinders the subsequent pick-up process. Come.

Further, when the electronic component 10 is picked up from the holding sheet 36, it is pushed up from the bottom surface of the holding sheet 36 one by one with a pin and peeled off. Therefore, if the bottom surface is sticky, the adhesive adheres to the pin and the pin Accurate pickup is not possible due to changes in the contact position and contact area. Further, when the contacted pin is pulled away from the holding sheet 36, the holding sheet 36 is pulled while being attached to the pin, and then the adhesive force of the adhesive is defeated by the tension of the holding sheet 36 and is peeled off, thereby being repelled. If this happens, the electronic component 10 may be affected by misalignment, peeling, or the like.

[Reason for improving heat dissipation of electronic components]
In the present embodiment, the surface opposite to the adhesive surface 36a of the holding sheet 36 of the mounting portion 35 is a non-adhesive surface 36b having no adhesiveness. However, the holding sheet 36 is brought into close contact with the mounting surface 34a of the tray 34 via the close contact sheet 38. Therefore, the heat of the electronic component 10 is transferred to the tray 34 via the holding sheet 36 and the close contact sheet 38. Therefore, the heating of the electronic component 10 is suppressed.

Further, the adhesive force between the first adhesive surface 38a and the non-adhesive surface 36b is smaller than the adhesive force between the second adhesive surface 38b and the mounting surface 34a. Therefore, when the holding sheet 36 is separated from the tray 34, the holding sheet 36 is easily peeled off from the first contact surface 38a in a state where the second contact surface 38b is in close contact with the mounting surface 34a. Therefore, the frame 37 and the holding sheet 36 are not easily distorted. Since the side opposite to the adhesive surface 36a of the holding sheet 36 is the non-adhesive surface 36b, there is no problem that the holding sheet 36 adheres to the pin when the electronic component 10 is picked up.

[Action effect]
In this embodiment, the chamber 20 is a container into which the sputter gas G1 is introduced, the transport unit 30 provided in the chamber 20 for circulating and transporting the electronic component 10, and the electronic component 10 which is circulated and transported by the transport section 30. It has a sputtering source 4 for depositing a film forming material by sputtering to form a film, and is conveyed by a film forming processing section 40 for forming a film on an electronic component 10 by the sputtering source 4 and a transport section 30 to provide a mounting surface 34a. It has a tray 34 and a mounting portion 35 mounted on the mounting surface 34a for mounting the electronic component 10.

The mounting portion 35 has a holding sheet 36 having an adhesive surface 36a having adhesiveness on one surface and a non-adhesive surface 36b having no adhesiveness on the other surface, and a non-adhesive surface on one surface. An adhesive sheet 38 having an adhesive first adhesive surface 38a that adheres to 36b and an adhesive second adhesive surface 38b that adheres to the mounting surface 34a of the tray 34 on the other surface. The adhesive surface 36a has an adhesive area S for attaching the electronic component 10, and the first adhesive surface 38a covers at least the entire area of the non-adhesive surface 36b corresponding to the adhesive area S. It is in close contact.

Therefore, the heat from the electronic component 10 is transferred to the tray 34 via the holding sheet 36 and the close contact sheet 38 and efficiently dissipated, so that the electronic component 10 does not become complicated or large in size. It is possible to suppress the heating of. In addition, it is not necessary to use electric power for cooling, and maintenance is easy.

A frame 37 defining a part or all of the outer edge of the sticking area S is stuck to the adhesive surface 36a of the holding sheet 36, and the first contact surface 38a is a region of the non-adhesive surface 36b corresponding to the sticking area S. In addition to the whole, it is also in close contact with the region of the non-adhesive surface 36b corresponding to the frame 37.

Therefore, the heat from the frame 37 is also transferred to the tray 34 via the holding sheet 36 and the close contact sheet 38, and is efficiently dissipated. Since the frame 37 is harder than the holding sheet 36, when the holding sheet 36 is peeled off from the adhesion sheet 38, the sticking area S surrounded by the frame 37 is stable, and the influence on the electronic component 10 is suppressed. Can be done. However, in the film forming process or the like, the frame 37 is also heated in the same manner as the electronic component 10. In the present embodiment, the cooling effect of the close contact sheet 38 can be obtained for the frame 37 as well.

Further, when the adhesive force between the first contact surface 38a and the non-adhesive surface 36b is Fa, and the adhesive force between the second contact surface 38b and the mounting surface 34a is Fb, Fa <Fb. More preferably, the peeling resistance of the first contact surface 38a to the non-adhesive surface 36b is made of a material smaller than the peel resistance of the second contact surface 38b to the mounting surface 34a.

Therefore, when the close contact sheet 38 is separated from the mounting portion 35, the close contact sheet 38 remains on the tray 34 side, and the holding sheet 36 is easily peeled off. Since the holding sheet 36 can be peeled off from the close contact sheet 38 with a light force, deformation of the holding sheet 36 can be suppressed.

Further, the adhesive sheet 38 has a thermal conductivity of 0.1 W / (m · K) or more. This promotes heat dissipation of the electronic component 10 and prevents heating.

[Test results]
The test results of actually performing the film forming process operation by the above procedure using the film forming apparatus of the present embodiment and the film forming apparatus of the comparative example and measuring the temperature will be described below. However, no electronic components are mounted on the mounting section. The temperature was assumed to be the temperature of the film ≈ the temperature of the electronic component, and the temperature of the holding sheet was measured with a thermocouple. The film forming conditions for each layer of the electromagnetic wave shielding film are as shown in FIG. The Ar bombard is also referred to as an ion bombardment, which is a cleaning and roughening treatment with Ar, and corresponds to the above-mentioned surface treatment.

(Comparative example)
In the comparative example, a PET film was used as the holding sheet, and the film was formed without using the adhesion sheet. The result is shown in FIG. In this test, the temperature rose to about 50 ° C. due to the surface treatment, to about 80 ° C. for the SUS film formation of the base layer, and further to about 145 ° C. for the Cu film formation. Subsequent film formation of SUS in the protective layer lowered the temperature to about 110 ° C.

In a general semiconductor package, when the temperature exceeds 150 ° C., the resin constituting the package is easily destroyed. Therefore, it is not preferable to heat up to about 145 ° C, which is close to 150 ° C. In particular, if the temperature exceeds 100 ° C., moisture and adhesive gas are released from the holding sheet and the adhesive sheet, which may increase the resistance value and deteriorate the film quality. Therefore, in the case of such a film forming apparatus, it is preferable to have a cooling mechanism.

(Example)
In the examples, a PET film was used as the holding sheet, and a PET film was used as the adhesion sheet to form a film. The result is shown in FIG. In this test, in the surface treatment, the temperature rose only to about 35 ° C., to about 40 ° C. for the SUS film formation of the underlayer, and to about 60 ° C. for the Cu film formation. Subsequent film formation of SUS in the protective layer lowered the temperature to about 50 ° C. As described above, it can be seen that the temperature rise is significantly suppressed in the present invention. In addition, in FIGS. 11 and 12, there are places where the measured value fluctuates up and down at minute time intervals due to noise, but the overall tendency does not change.

[Other embodiments]
The present invention is not limited to the above embodiment, but also includes the following aspects.
(1) In the above embodiment, the holding sheet 36 and the close contact sheet 38 are flat, but this means that the holding sheet 36 and the close contact sheet 38 are flat, and the surface thereof is not limited to being flat. Since the adhesive surface 36a of the holding sheet 36, the first adhesive surface 38a of the adhesive sheet 38, and the second adhesive surface 38b are adhesive surfaces, fine irregularities are present. Further, the first contact surface 38a and the second contact surface 38b of the contact sheet 38 may have a grooved shape. For example, a groove communicating with the outside is formed on one or both of the first contact surface 38a and the second contact surface 38b. The groove is preferably small enough not to impair the cooling effect. By providing such a groove, even if bubbles are formed on the contact surface when the holding sheet 36 and the contact sheet 38 are bonded to each other, there is an effect that the bubbles are easily removed from the groove. Further, in this case, the shape separated by the groove in the close contact sheet 38 may be a polygonal shape such as a quadrangle, or a closed curve shape such as a circle or an ellipse. Further, the mounting surface 34a of the tray 34 is not limited to a flat surface. Concavities and convexities that match each other may be formed on each of the mounting surface 34a and the second contact surface 38b of the contact sheet 38 to improve the thermal conductivity by increasing the surface area.

(2) As the film forming material, various materials that can be formed by sputtering can be applied. For example, as the electromagnetic wave shielding film, Al, Ag, Ti, Nb, Pd, Pt, Zr and the like can also be used. Further, Ni, Fe, Cr, Co and the like can be used as the magnetic material. Furthermore, SUS, Ni, Ti, V, Ta and the like can be used as the underlying adhesion layer, and SUS, Au and the like can be used as the outermost protective layer.

(3) As the form of the package 12, any form available now or in the future, such as BGA, LGA, SOP, QFP, WLP, etc., can be applied. The terminals for which the electronic component 10 is electrically connected to the outside include, for example, a hemispherical terminal such as a BGA provided on the bottom surface, a planar terminal such as an LGA, and a strip-shaped terminal of SOP and QFP provided on the side surface. However, any terminal that can be used now or in the future can be applied, and its formation position does not matter. Further, the number of elements 11 sealed inside the electronic component 10 may be singular or plural.

(4) The number of targets in the film formation position is not limited to two. The number of targets may be one or three or more. Further, the film formation position may be two or less, or four or more.

(5) The number of trays and electronic components simultaneously conveyed by the conveying unit and the number of holding units for holding the trays may be at least one, and the number is not limited to the number exemplified in the above embodiment. That is, one electronic component may circulate and repeat the film formation, or two or more electronic components may circulate and repeat the film formation.

(6) Cleaning and surface treatment by etching or ashing may be performed in a chamber different from the chamber having the film forming position. When the oxidation treatment or the post-oxidation treatment is performed, oxygen can be used as the process gas G2. When nitriding is performed, nitrogen can be used as the process gas G2.

(7) In the above embodiment, the rotary table 31 rotates in a horizontal plane. However, the direction of the rotating surface of the transport unit is not limited to a specific direction. For example, it may be a rotating surface that rotates in a vertical surface. Further, the transport means included in the transport unit is not limited to the rotary table. For example, a cylindrical member having a holding portion for holding a work may be a rotating body that rotates about an axis. Further, the locus of circulation transportation is not limited to the circumference. It includes a wide range of modes in which circulation is carried out by an endless transport path. For example, it may be rectangular or elliptical, and may include a crank or a meandering path. The transport path may be configured by, for example, a conveyor or the like.

Further, the present invention has a chamber 20 which is a container into which the sputtering gas G1 is introduced, and a sputtering source 4 which is provided in the chamber 20 and deposits a film forming material by sputtering to form a film, and also by the sputtering source 4. The film forming processing unit 40 for forming a film on the electronic component 10, the tray 34 installed in the processing area by the film forming processing unit 40 and having the mounting surface 34a, and the electronic component 10 mounted on the mounting surface 34a are mounted. It is sufficient that the film forming apparatus 100 has a mounting portion 35 for mounting the film, and has the mounting portion 35 as described above. Therefore, the film forming apparatus may be used to form a film in a stationary state without circulating and transporting the electronic component 10. The tray 34 on which the electronic component 10 is mounted may be carried in via the mounting portion 35, installed in the processing area, and sputtering may be performed without changing the relative position with respect to the target 41.

(8) In the above embodiment, the film-forming materials are selectively deposited one by one to form a film. However, the present invention is not limited to this, and it is sufficient that a film composed of a plurality of layers of the film-forming material can be formed by selectively depositing the film-forming material. Therefore, two or more kinds of film forming materials may be deposited at the same time. For example, the electromagnetic wave shielding film may be formed of an alloy of Co, Zr, and Nb. In such a case, among a plurality of film forming processing sections, a film forming processing section using Co as a film forming material, a film forming processing section using Zr as a film forming material, and a film forming process using Nb as a film forming material. The portions may be selected at the same time to form a film.

In this case, the circumferential locus is formed so that the locus passing through a portion other than the film forming position during film formation is longer than the locus passing through the film forming position during film formation. It is preferable to select the film forming processing section to be used for the film, or to set the arrangement of the dividing section that separates the film forming processing section.

That is, in either case of selecting a plurality of one-type or a plurality of types of film-forming processing sections to form a film, or selecting a single film-forming processing section to form a film, the circumference Of the trajectories, the film formation processing unit used for film formation is provided so that the trajectory that passes through the portion other than the film formation position during film formation is longer than the trajectory that passes through the film formation position during film formation. It is preferable to select or set the arrangement of the dividing portion that separates the film forming processing portion.

(9) Although the embodiments of the present invention and modified examples of each part have been described above, the embodiments and modified examples of each part are presented as examples, and the scope of the invention is not intended to be limited. .. These novel embodiments described above can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and variations thereof are included in the scope and gist of the invention, and are also included in the invention described in the claims.

10 Electronic parts 11 Element 12 Package 13 Electromagnetic shield film 14 Substrate 100 Film forming device 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Vacuum chamber 22 Exhaust port 23 Exhaust part 24 Introducing port 25 Gas supply part 30 Conveying part 31 Rotating table 32 Motor 33 Holding part 34 Tray 34a Mounting surface 34b Peripheral wall part 35 Mounting part 36 Holding sheet 36a Adhesive surface 36b Non-adhesive surface 37 Frame 37a Through hole 38 Adhesion sheet 38a First contact surface 38b Second contact surface 40, 40A, 40B Film formation processing unit 4 Spatter source 41, 41A, 41B Target 42 Backing plate 43 Electrode 44 Separator 44a, 44b Wall plate 5 Processing unit 51 Cylindrical electrode 51a Opening 51b Flange 52 Insulation member 53 Housing 54 Shield 55 Process Gas introduction unit 56 RF power supply 57 Matching box 6 Power supply unit 60 Load lock unit 70 Control device 71 Mechanism control unit 72 Power supply control unit 73 Storage unit 74 Setting unit 75 Input / output control unit 76 Input device 77 Output device E Exhaust L Transport path M , M1, M2 Formation position M3 Processing position G Reaction gas G1 Spatter gas G2 Process gas S Pasting area

Claims (6)

The chamber, which is the container into which the sputter gas is introduced, and
A film forming processing unit provided in the chamber, which has a sputtering source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on an electronic component by the sputtering source.
A tray installed in the processing area of the film forming processing unit and having a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area .
When the adhesive force between the first adhesive surface and the non-adhesive surface is Fa, and the adhesive force between the second adhesive surface and the above-mentioned mounting surface is Fb, Fa <Fb. A featured film forming device. The chamber, which is the container into which the sputter gas is introduced, and
A transport unit provided in the chamber for circulating and transporting electronic components,
The electronic component that is circulated and transported by the transport unit has a sputter source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on the electronic component by the sputtering source.
A tray that is transported by the transport unit and has a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area .
When the adhesive force between the first adhesive surface and the non-adhesive surface is Fa, and the adhesive force between the second adhesive surface and the above-mentioned mounting surface is Fb, Fa <Fb. A featured film forming device. The chamber, which is the container into which the sputter gas is introduced, and
A film forming processing unit provided in the chamber, which has a sputtering source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on an electronic component by the sputtering source.
A tray installed in the processing area of the film forming processing unit and having a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area.
The adhesive sheet is characterized in that the peeling resistance of the first adhesive surface to the non-adhesive surface is smaller than the peeling resistance of the second adhesive surface to the previously described mounting surface. Membrane device. The chamber, which is the container into which the sputter gas is introduced, and
A transport unit provided in the chamber for circulating and transporting electronic components,
The electronic component that is circulated and transported by the transport unit has a sputter source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on the electronic component by the sputtering source.
A tray that is transported by the transport unit and has a mounting surface,
A mounting portion mounted on the mounting surface described above for mounting the electronic component, and a mounting portion.
Have,
The above-mentioned place is
A holding sheet having an adhesive surface on one surface and a non-adhesive surface on the other surface,
One surface has a first adhesive surface that adheres to the non-adhesive surface, and the other surface has a second adhesive surface that adheres to the mounting surface of the tray. Adhesive sheet and
Have,
The adhesive surface has a sticking area for sticking the electronic component.
The first contact surface is in close contact with at least the entire non-adhesive surface area corresponding to the sticking area.
The adhesion sheet is characterized in that the peel resistance of the first adhesion surface to the non-adhesive surface is smaller than the peel resistance of the second adhesion surface to the previously described placement surface. Membrane device. A frame defining a part or all of the outer edge of the sticking area is stuck on the adhesive surface of the holding sheet.
Claim 1 is characterized in that the first contact surface is in close contact with the non-adhesive surface area corresponding to the frame in addition to the entire non-adhesive surface area corresponding to the sticking area. The film forming apparatus according to any one of 4 to 4. The film forming apparatus according to any one of claims 1 to 5, wherein the adhesive sheet has a thermal conductivity of 0.1 W / (m · K) or more.

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