JP2018095959A - Film deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a film deposition apparatus enabled to suppress the heating electronic components by a simple construction.SOLUTION: A film deposition apparatus comprises: a transportation part for circulating and transporting an electronic part 10 in a chamber; a deposition part for depositing on the electronic part 10; a tray transported by the transportation part and having a placing face; and a placing part 35 placed on the placing face for mounting the electronic part 10. The placing part 35 is formed on one face with an adhesive face 36a on one face and a non-adhesive face 36b on the other face with a second adhesive face 38b having such an adhesiveness as adheres to the placing face of the tray. The adhesive face 36a has a sticking region S for sticking the electronic part 10, and a first adhesive face 38a adheres to the entirety of the region of the non-adhesive face 36b corresponding at least to the sticking region S.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a film forming apparatus.

  A wireless communication device typified by a mobile phone is equipped with a large number of semiconductor devices that are electronic components. Semiconductor devices are required to suppress the influence of electromagnetic waves on the inside and outside, such as leakage of electromagnetic waves to the outside, in order to prevent the influence on communication characteristics. For this reason, a semiconductor device having a shielding function against electromagnetic waves is used.

  Generally, a semiconductor device is formed by mounting a semiconductor chip on an interposer substrate as a relay substrate for a mounting substrate and sealing the semiconductor chip with a resin. A semiconductor device having a shielding function has been developed by providing a conductive electromagnetic shielding film on the upper surface and side surfaces of the sealing resin (see Patent Document 1).

  Such an electromagnetic wave shielding film can be a laminated film of a plurality of types of metal materials. For example, an electromagnetic wave shielding film having a laminated structure in which a Cu film is formed on a SUS film and a SUS film is further formed thereon is known.

  In the electromagnetic wave shielding film, in order to obtain a sufficient shielding effect, it is necessary to lower the electrical resistivity. For this reason, the electromagnetic wave shielding film is required to have a certain thickness. In a semiconductor device, generally, good shielding characteristics can be obtained if the film thickness is about 1 μm to 10 μm. It is known that an electromagnetic shielding film having a laminated structure of SUS, Cu, and SUS can provide a good shielding effect if it has a thickness of about 1 μm to 5 μm.

International Publication No. 2013/035819

  A plating method is known as a method for forming an electromagnetic wave shielding film. However, since the plating method requires wet processes such as a pretreatment process, a plating process, and a post-treatment process such as water washing, an increase in manufacturing cost of the semiconductor device is inevitable.

  Therefore, a sputtering method, which is a dry process, has attracted attention. As a film forming apparatus using a sputtering method, a plasma processing apparatus for forming a film using plasma has been proposed. The plasma processing apparatus introduces an inert gas into a vacuum vessel in which a target is disposed, and applies a DC voltage. The plasma-generated inert gas ions collide with the target of the film forming material, and the material knocked out of the target is deposited on the workpiece to form a film.

  A general plasma processing apparatus is used to form a film having a thickness of 10 to several hundreds of nanometers that can be formed in a processing time of several tens of seconds to several minutes. However, as described above, it is necessary to form a film having a thickness of micron level as the electromagnetic wave shielding film. Since the sputtering method is a technique for forming a film by depositing particles of a film forming material on a film formation target, the thicker the film to be formed, the longer it takes to form the film.

  Therefore, in order to form the electromagnetic wave shielding film, a processing time of about several tens of minutes to one hour, which is longer than a general sputtering method, is required. For example, an electromagnetic shielding film having a laminated structure of SUS, Cu, and SUS may require a processing time of just over 1 hour in order to obtain a film thickness of 5 μm.

  Then, in the sputtering method using plasma, the package that is the exterior of the semiconductor device is continuously exposed to the heat of the plasma during this processing time. As a result, the package may be heated to around 200 ° C. until a film having a thickness of 5 μm is obtained.

  On the other hand, the heat-resistant temperature of the package is about 200 ° C. for temporary heating of several seconds to several tens of seconds, but is generally about 150 ° C. when the heating exceeds several minutes. For this reason, it has been difficult to form an electromagnetic wave shielding film at a micron level using a general plasma sputtering method.

  In order to cope with this, it is conceivable to provide a cooling device for suppressing the temperature rise of the semiconductor package in the plasma processing apparatus. In this case, the apparatus configuration becomes complicated and large.

  An object of this invention is to provide the film-forming apparatus which can suppress the heating of an electronic component with simple structure.

  In order to achieve the above object, the present invention includes a chamber that is a container into which a sputtering gas is introduced, and a sputtering source that is provided in the chamber and deposits a film forming material by sputtering to form a film. A film forming processing unit for forming a film on an electronic component by the sputtering source, a tray having a mounting surface installed in a processing region by the film forming processing unit, and a mounting surface mounted on the mounting surface. A holding sheet having a non-adhesive surface having an adhesive surface on one side and an adhesive surface on the other surface. The first adhesive surface that adheres to the non-adhesive surface is provided on one surface, and the second adhesive surface that adheres to the mounting surface of the tray is provided on the other surface. An adhesive sheet having the electronic component. It has a pasting area for applying Ri, over the entire non-adhesive surface area corresponding to at least the sticking region, wherein the first contact surface are in close contact.

  In addition, the present invention provides a chamber that is a container into which a sputtering gas is introduced, a transport unit that is provided in the chamber and circulates and transports electronic components, and the electronic component that is circulated and transported by the transport unit by sputtering. A sputtering source for depositing a film forming material to form a film; a film forming processing unit for forming a film on an electronic component by the sputtering source; a tray having a mounting surface that is transported by the transport unit; A mounting portion for mounting the electronic component, wherein the mounting portion has an adhesive surface having adhesiveness on one surface and adhesiveness on the other surface. A holding sheet having a non-adhesive surface that does not have, a first adhesive surface that has adhesiveness that is in close contact with the non-adhesive surface on one surface, and is in close contact with the mounting surface of the tray on the other surface Adhesive seam having an adhesive second adhesive surface And the adhesive surface has a pasting region for pasting the electronic component, and the first contact surface is at least over the entire region of the non-tacky surface corresponding to the pasting region. It is characterized by being in close contact.

  A metal frame that defines a part or all of the outer edge of the sticking area is attached to the adhesive surface of the holding sheet, and the first close contact surface is a non-adhesive surface area corresponding to the sticking area. In addition to the above, it may be in close contact with the non-adhesive surface region corresponding to the frame.

  If the adhesive force between the first contact surface and the non-adhesive surface is Fa, and the adhesive force between the second contact surface and the mounting surface is Fb, Fa <Fb may be satisfied.

  The adhesion sheet may be formed of a material having a separation resistance of the first adhesion surface with respect to the non-adhesive surface smaller than a separation resistance with respect to the placement surface of the second adhesion surface.

  The contact sheet may have a thermal conductivity of 0.1 W / (m · K) or more.

  ADVANTAGE OF THE INVENTION According to this invention, the film-forming apparatus which can suppress the heating of an electronic component with simple structure can be provided.

It is a schematic cross section which shows the electronic component of embodiment. It is a see-through | perspective perspective view of the film-forming apparatus of embodiment. It is a perspective top view of the film-forming apparatus of embodiment. It is an AA schematic longitudinal cross-sectional view of FIG. It is a perspective view which shows the tray in which the electronic component is arrange | positioned. It is a disassembled perspective view which shows the structure of a mounting part. It is a block diagram which shows the control apparatus of embodiment. It is explanatory drawing which shows mounting to the tray of a mounting part, and isolation | separation of a contact | adherence sheet | seat. It is explanatory drawing which shows the film-forming to an electronic component. It is explanatory drawing which shows the film-forming conditions of a comparative example and an Example. It is a graph which shows the temperature change according to progress of the time of a comparative example. It is a graph which shows the temperature change according to progress of the time of an Example.

  Embodiments of the present invention (hereinafter referred to as the present embodiments) will be specifically described with reference to the drawings.

[Electronic parts]
As shown in FIG. 1, an electronic component 10 that is a film formation target of this embodiment includes a package 12 in which an element 11 is sealed. The element 11 is a surface mount component such as a semiconductor chip, a diode, a transistor, a capacitor, or a SAW filter. In the following description, an example in which the semiconductor chip is the element 11 will be described. The semiconductor chip here is configured as an integrated circuit in which a plurality of electronic elements are integrated.

  The element 11 is mounted on the surface of the substrate 14. The substrate 14 has a circuit pattern formed on the surface of a plate made of ceramic, glass, epoxy resin or the like. The element 11 and the circuit pattern are connected by solder.

  The surface of the substrate 14 on which the element 11 is mounted is sealed with a synthetic resin so as to cover the element 11, thereby forming the package 12. The package 12 has a substantially rectangular parallelepiped shape.

  In the present embodiment, the electromagnetic wave shielding film 13 is formed on the top surface 12a and the side surface 12b of the electronic component 10 as described above. The electromagnetic wave shielding film 13 is a film that shields electromagnetic waves formed of a conductive material. In order to obtain a shielding effect, the electromagnetic wave shielding film 13 only needs to be formed on at least the top surface 12a of the package 12. The electromagnetic wave shielding film 13 on the side surface 12b is for grounding. The top surface 12a of the package 12 is an outer surface opposite to the surface mounted on the product.

  The top surface 12a is the top surface at the highest position when placed horizontally, but it may face upward or may not face upward when mounted. The side surface 12b is an outer peripheral surface formed at a different angle with respect to the top surface 12a. The top surface 12a and the side surface 12b may form a corner or may be continuous by a curved surface.

[Film deposition system]
A film forming apparatus 100 of the present embodiment will be described with reference to FIGS. The film forming apparatus 100 is an apparatus that forms an electromagnetic wave shielding film 13 on the outer surface of the package 12 of each electronic component 10 by sputtering. As shown in FIG. 2, in the film forming apparatus 100, when the turntable 31 rotates, the electronic component 10 on the tray 34 held by the holding unit 33 moves along a circumferential locus and faces the sputtering source 4. This is an apparatus for depositing and depositing particles sputtered from a target 41 (see FIG. 3) when passing through a position.

  As illustrated in FIGS. 2 and 3, the film forming apparatus 100 includes a chamber 20, a transport unit 30, film forming units 40 </ b> A and 40 </ b> B, a surface processing unit 50, a load lock unit 60, and a control device 70.

[Chamber]
The chamber 20 is a container into which the reaction gas G is introduced. The reactive gas G includes a sputtering gas G1 for sputtering and a process gas G2 for various treatments (see FIG. 4). In the following description, when the sputtering gas G1 and the process gas G2 are not distinguished, they may be referred to as reaction gases G. The sputtering gas G1 is a gas for performing sputtering on the package 12 of the electronic component 10 by causing generated ions or the like to collide with the target 41 by plasma generated by application of electric power. For example, an inert gas such as argon gas can be used as the sputtering gas G1.

  The process gas G2 is a gas for performing surface treatment by etching or ashing. Hereinafter, such surface treatment may be referred to as reverse sputtering. The process gas G2 can be changed as appropriate according to the purpose of processing. For example, when etching is performed, an inert gas such as an argon gas can be used as an etching gas. In the present embodiment, the surface of the electronic component 10 is cleaned and roughened by argon gas. For example, the adhesion of the film can be enhanced by cleaning the surface and performing a roughening treatment on the nano order.

  A space inside the chamber 20 forms a vacuum chamber 21. The vacuum chamber 21 is a space that is airtight and can be evacuated by reduced pressure. For example, as shown in FIGS. 2 and 4, the vacuum chamber 21 is a cylindrical sealed space formed by a ceiling 20 a, an inner bottom surface 20 b, and an inner peripheral surface 20 c inside the chamber 20.

  As shown in FIG. 4, the chamber 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for performing the exhaust E while ensuring the gas flow between the vacuum chamber 21 and the outside. The exhaust port 22 is formed at the bottom of the chamber 20, for example. An exhaust unit 23 is connected to the exhaust port 22. The exhaust part 23 has piping, a pump, a valve (not shown), and the like. The inside of the vacuum chamber 21 is depressurized by the exhaust processing by the exhaust unit 23.

  The introduction port 24 is an opening for introducing the sputtering gas G <b> 1 in the vicinity of the target 41 in the vacuum chamber 21. A gas supply unit 25 is connected to the introduction port 24. One gas supply unit 25 is provided for each target 41. The gas supply unit 25 includes a gas supply source of a reaction gas G (not shown), a pump, a valve, and the like in addition to piping. The gas supply unit 25 introduces the sputtering gas G 1 into the vacuum chamber 21 from the introduction port 24. Note that an opening 21a into which the surface treatment unit 50 is inserted is provided in the upper portion of the chamber 20, as will be described later.

[Transport section]
The conveyance unit 30 is a device that is provided in the chamber 20 and circulates and conveys the electronic component 10 along a circular trajectory. Circulating conveyance refers to moving the tray 34 on which the electronic component 10 is mounted in a circular path. A trajectory along which the tray 34 moves by the transport unit 30 is referred to as a transport path L. The transport unit 30 includes a rotary table 31, a motor 32, and a holding unit 33. The holding unit 33 holds a tray 34 on which the mounting unit 35 is mounted.

  The turntable 31 is a circular plate. The motor 32 is a drive source that applies a driving force to the rotary table 31 and rotates the center of the circle as an axis. The holding unit 33 is a component that holds a later-described tray 34 conveyed by the conveyance unit 30. On the top surface of the rotary table 31, a plurality of holding portions 33 are arranged at circumferentially equidistant positions. For example, the region in which each holding unit 33 holds the tray 34 is formed in an orientation parallel to the tangent to the circumferential circle of the turntable 31 and is provided at equal intervals in the circumferential direction. More specifically, the holding unit 33 is a groove, hole, protrusion, jig, holder, or the like that holds the tray 34. It can be constituted by a mechanical chuck or an adhesive chuck.

  As shown in FIG. 5, the tray 34 is a member having a flat placement surface 34a. The mounting surface 34a is one flat surface of a rectangular flat plate. A peripheral wall 34b is formed at the peripheral edge of the mounting surface 34a. The peripheral wall portion 34b is a frame raised in a square shape surrounding the placement surface 34a. The material of the tray 34 is preferably a material having high thermal conductivity, for example, metal. In the present embodiment, the material of the tray 34 is SUS. The material of the tray 34 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof.

  The placement unit 35 is a member that is placed on the placement surface 34 a of the tray 34 and for mounting the electronic component 10. The placement unit 35 includes a holding sheet 36, a frame 37, and a contact sheet 38. As shown in FIG. 6, the holding sheet 36 is a flat sheet and has an adhesive surface 36 a having adhesiveness on one surface. The adhesive surface 36 a extends over the entire one surface of the holding sheet 36. The adhesive surface 36 a has a pasting area S for pasting the electronic component 10. In the present embodiment, the holding sheet 36 is a square, and the pasting area S is a rectangular area smaller than the outer edge of the holding sheet 36. However, the pasting area S may be the entire surface of the holding sheet 36. The other surface of the holding sheet 36 is a non-adhesive surface 36b that does not have adhesiveness. The non-adhesive surface 36b can be, for example, a smooth surface.

  The frame 37 is a member to which the adhesive surface 36 a of the holding sheet 36 is attached and which defines a part or all of the outer edge of the application region S. The material of the frame 37 is preferably a material having high thermal conductivity, for example, a metal. In the present embodiment, the material of the frame 37 is SUS. As with the tray 34, the material of the frame 37 may be, for example, ceramics or resin having good thermal conductivity, or a composite material thereof. The material of the tray 34 and the material of the frame 37 may be the same or different. The frame 37 of the present embodiment surrounds the pasting area S and defines the entire outer edge of the pasting area S. The frame 37 is a rectangular plate-shaped member, and a rectangular through hole 37a is formed at the center. The inner edge of the through hole 37a coincides with the outer edge of the pasting region S. The outer shape of the frame 37 matches the outer shape of the holding sheet 36.

  The adhesive surface 36a of the holding sheet 36 is affixed to the bottom surface of the frame 37 so that the external shapes thereof coincide with each other and close the bottom surface side of the through hole 37a. For this reason, the sticking area S of the adhesive surface 36 a is exposed from the through hole 37 a on the top surface side of the frame 37.

  As shown in FIGS. 5 and 6, the plurality of electronic components 10 are adhesively held on the exposed pasting region S in the frame 37. The plurality of electronic components 10 are arranged and arranged in a matrix at intervals so that a film is formed not only on the top surface 12a but also on the side surface 12b.

  As shown in FIG. 6, the adhesion sheet 38 is a flat sheet, and has a first adhesion surface 38 a on one surface and a second adhesion surface 38 b on the other surface. The first contact surface 38 a is an adhesive surface that is in close contact with the non-adhesive surface 36 b of the holding sheet 36. The first contact surface 38a is in close contact with at least the entire region of the non-adhesive surface 36b corresponding to the pasting region S. The region of the non-adhesive surface 36b corresponding to the pasting region S refers to the region of the non-adhesive surface 36b that is directly behind the pasting region S. The first contact surface 38 a is also in close contact with the non-adhesive surface region corresponding to the frame 37. In other words, the first contact surface 38 a is in close contact with a range that extends to the region of the non-adhesive surface 36 b that is directly behind the frame 37. In the present embodiment, the outer dimensions of the frame 37, the holding sheet 36, and the contact sheet 38 are the same.

  The second contact surface 38 b is an adhesive surface that is in close contact with the placement surface 34 a of the tray 34. In the present embodiment, the frame 37, the holding sheet 36, and the contact sheet 38 are all stacked so that their outer shapes match, and the entire second contact surface 38 b is in close contact with the tray 34.

  Here, when the adhesive force between the first contact surface 38a and the non-adhesive surface 36b of the holding sheet 36 is Fa, and the adhesive force between the second contact surface 38b and the mounting surface 34a of the tray 34 is Fb, Fa < Fb. For example, it is preferable to satisfy 2 ≦ (Fb−Fa). Further, the separation resistance of the non-adhesive surface 36b of the holding sheet 36 with respect to the first contact surface 38a is made of a material smaller than the separation resistance of the mounting surface 34a of the tray 34 with respect to the second contact surface 38b. For example, Fa is preferably 0.02 to 0.03 [N / width 25 mm], and Fb is preferably 4 to 7 [N / width 25 mm]. However, the present invention is not limited to these values. The adhesive sheet 38 preferably has a thermal conductivity of 0.1 W / (m · K) or more. The higher the thermal conductivity, the better. However, if it is about 1 W / (m · K), a good cooling effect can be obtained.

  As a material of the holding sheet 36 and the contact sheet 38, it is conceivable to use a heat-resistant synthetic resin. For example, PET (polyethylene terephthalate), PEN (polyethylene naphthalate), PI (polyimide) and the like can be used, but are not limited thereto. It is conceivable that the adhesive surface 36a, the first contact surface 38a, and the second contact surface 38b may be adhesive surfaces that apply an adhesive to the surface of the sheet or have adhesive properties on the surface. As the material of the adhesive or the adhesive surface, for example, various materials having adhesive properties such as silicone-based and acrylic-based resins, urethane resins, and epoxy resins can be used.

  As shown in FIGS. 5 and 6, the plurality of electronic components 10 are affixed in a matrix form within the affixing region S of the adhesive surface 36 a of the placement portion 35. By preparing a plurality of such placement portions 35 and placing them on the placement surface 34a of the tray 34 via the contact sheet 38, the second contact surface 38b of the contact sheet 38 is brought into close contact with the placement surface 34a. Let However, the mounting unit 35 may be mounted on the tray 34 as a single unit.

  In this way, the electronic component 10 is positioned on the turntable 31 by the tray 34, the placement unit 35, and the contact sheet 38 held by the holding unit 33. In the present embodiment, since six holding portions 33 are provided, six trays 34 are held on the rotary table 31 at intervals of 60 °. However, the holding part 33 may be one or plural.

[Deposition processing section]
The film formation processing units 40 </ b> A and 40 </ b> B are processing units that perform film formation on the electronic component 10 conveyed by the conveyance unit 30. Hereinafter, when the plurality of film forming units 40A and 40B are not distinguished, the film forming unit 40 will be described. As illustrated in FIG. 4, the film formation processing unit 40 includes a sputtering source 4, a partition unit 44, and a power supply unit 6.

(Sputter source)
The sputtering source 4 is a supply source of a film forming material for forming a film by depositing a film forming material on the electronic component 10 by sputtering. The sputter source 4 includes a target 41, a backing plate 42, and an electrode 43. The target 41 is formed of a film forming material that is deposited on the electronic component 10 to be a film, and is provided at a position facing the transport path L with a distance. As shown in FIG. 3, the target 41 of the present embodiment has two targets 41 </ b> A and 41 </ b> B arranged in a direction orthogonal to the transport direction, that is, in the radial direction of rotation of the rotary table 31. Hereinafter, the targets 41 </ b> A and 41 </ b> B are referred to as targets 41 when they are not distinguished. The bottom surface side of the target 41 is opposed to the electronic component 10 that is moved by the transport unit 30. Note that the processing region, which is an execution region where the film forming material can be attached by the two targets 41A and 41B, is larger than the size of the tray 34 in the radial direction of the turntable 31.

  As described later, for example, Cu, Ni, Fe, SUS or the like is used as the film forming material. However, various materials can be used as long as the materials are formed by sputtering. Further, the target 41 has, for example, a cylindrical shape. However, other shapes such as a long cylindrical shape and a prismatic shape may be used.

  The backing plate 42 is a member that holds the target 41. The electrode 43 is a conductive member for applying electric power to the target 41 from the outside of the chamber 20. The sputter source 4 is appropriately provided with a magnet, a cooling mechanism, etc. as necessary.

(Separator)
The delimiter 44 is a member that partitions film forming positions M1 and M2 where the electronic component 10 is formed by the sputtering source 4 and a processing position M3 for performing surface treatment. Hereinafter, when the film forming positions M1 and M2 are not distinguished, the film forming positions M will be described. As shown in FIG. 3, the delimiter 44 includes rectangular wall plates 44 a and 44 b that are arranged radially from the center of the circumference of the conveyance path L, that is, from the rotation center of the rotary table 31 of the conveyance unit 30. The wall plates 44a and 44b are provided, for example, at positions where the target 41 is sandwiched between the ceiling of the vacuum chamber 21. The lower end of the partition 44 is opposed to the rotary table with a gap through which the electronic component 10 passes. The presence of the partitioning portion 44 can suppress diffusion of the reaction gas G and the film forming material into the vacuum chamber 21.

  The film forming position M is a space including the target 41 of the sputtering source 4 and delimited by the delimiter 44. More specifically, as shown in FIG. 3, the film formation positions M <b> 1 and M <b> 2 and the processing position M <b> 3 are determined by the wall plates 44 a and 44 b of the partitioning portion 44 and the inner peripheral surface 20 c of the chamber 20 as viewed from the plane direction. It is a space surrounded by a fan shape. The horizontal range of the film forming positions M1 and M2 and the processing position M3 is an area divided by a pair of wall plates 44a and 44b. The film forming material is deposited as a film on the electronic component 10 that passes through the position facing the target 41 at the film forming position M. This film formation position M is an area where most of the film formation is performed, but even in an area outside the film formation position M, there is a leakage of film formation material from the film formation position M. Is not without. That is, the processing area where film formation is performed is an area slightly wider than the film formation position M.

(Power supply part)
The power supply unit 6 is a component that applies power to the target 41. By applying power to the target 41 by the power supply unit 6, the sputtering gas G <b> 1 can be turned into plasma, and the film forming material can be deposited on the electronic component 10. In the present embodiment, the power supply unit 6 is, for example, a DC power supply that applies a high voltage. In the case of an apparatus that performs high-frequency sputtering, an RF power source may be used. The turntable 31 has the same potential as the grounded chamber 20, and generates a potential difference by applying a high voltage to the target 41 side. Thereby, the difficulty of connecting with the power supply part 6 in order to make the movable rotary table 31 into a negative electric potential is avoided.

  The plurality of film forming units 40 selectively form a film forming material to form a film composed of a plurality of film forming material layers. In particular, in the present embodiment, a film including a plurality of types of film forming material layers is formed by including the sputtering sources 4 corresponding to different types of film forming materials and selectively depositing the film forming materials. The inclusion of the sputter source 4 corresponding to different types of film forming materials means that even when the film forming materials of all the film forming units 40 are different, the plurality of film forming units 40 are common film forming materials. This includes cases where others are different. The selective deposition of the film forming materials one by one means that while the film forming processing unit 40 of any one film forming material performs the film forming, the film forming processing unit 40 of the other film forming material forms a film. It means not to do. In addition, the film formation processing unit 40 or the film formation position M during film formation means that the power is applied to the target 41 of the film formation processing unit 40 and the electronic component 10 can be formed. This refers to the deposition position M.

  In the present embodiment, two film forming units 40A and 40B are disposed in the transport direction of the transport path L with the surface treatment unit 50 interposed therebetween. The film forming positions M1 and M2 correspond to the two film forming units 40A and 40B. Of these film forming units 40A and 40B, the film forming unit 40A is made of SUS. That is, the sputtering source 4 of the film forming unit 40A includes the targets 41A and 41B made of SUS. In the other film forming processing unit 40B, the film forming material is Cu. That is, the sputtering source 4 of the film forming unit 40B includes the targets 41A and 41B made of Cu. In the present embodiment, while any one of the film forming units 40 is performing the film forming process, the other film forming units 40 do not perform the film forming process.

[Surface treatment section]
The surface treatment unit 50 is a treatment unit that performs surface treatment, that is, reverse sputtering, on the electronic component 10 conveyed by the conveyance unit 30. The surface treatment unit 50 is provided at the processing position M3 partitioned by the partitioning unit 44. The surface treatment unit 50 includes a treatment unit 5. A configuration example of the processing unit 5 will be described with reference to FIGS.

  The processing unit 5 includes a cylindrical electrode 51 provided from the upper part of the chamber 20 to the inside thereof. The cylindrical electrode 51 has a rectangular tube shape, has an opening 51a at one end, and is closed at the other end. The cylindrical electrode 51 is attached to an opening 21 a provided on the top surface of the chamber 20 via an insulating member 52 so that one end having the opening 51 a faces the rotary table 31. The side wall of the cylindrical electrode 51 extends inside the chamber 20.

  A flange 51b projecting outward is provided at the end of the cylindrical electrode 51 opposite to the opening 51a. The insulating member 52 is fixed between the flange 51b and the periphery of the opening 21a of the chamber 20, so that the inside of the chamber 20 is kept airtight. The insulating member 52 only needs to be insulative and is not limited to a specific material. For example, the insulating member 52 can be made of a material such as PTFE (polytetrafluoroethylene).

  The opening 51 a of the cylindrical electrode 51 is disposed at a position facing the conveyance path L of the turntable 31. The rotary table 31 transports the tray 34 on which the electronic component 10 is mounted as the transport unit 30 and passes the position facing the opening 51a. Note that the opening 51 a of the cylindrical electrode 51 is larger than the size of the tray 34 in the radial direction of the rotary table 31.

  As shown in FIG. 3, the cylindrical electrode 51 has a fan shape whose diameter increases from the center side to the outside in the radial direction of the rotary table 31 when viewed from the plane direction. The fan shape here means the shape of the fan face of the fan. Similarly, the opening 51a of the cylindrical electrode 51 has a fan shape. The speed at which the tray 34 on the turntable 31 passes through the position facing the opening 51a becomes slower toward the center side in the radial direction of the turntable 31, and becomes faster toward the outside. Therefore, if the opening 51a is a simple rectangle or square, a difference occurs in the time required for the electronic component 10 to pass through the position facing the opening 51a between the center side and the outside in the radial direction. By expanding the diameter of the opening 51a from the center side toward the outside in the radial direction, the time for passing through the opening 51a can be made constant, and the plasma processing described later can be made uniform. However, a rectangle or a square may be used as long as the difference in passing time does not cause a problem in the product.

  As described above, the cylindrical electrode 51 passes through the opening 21 a of the chamber 20, and a part thereof is exposed to the outside of the chamber 20. A portion of the cylindrical electrode 51 exposed to the outside of the chamber 20 is covered with a housing 53 as shown in FIG. The housing 53 keeps the space inside the chamber 20 airtight. A portion of the cylindrical electrode 51 located inside the chamber 20, that is, the periphery of the side wall is covered with a shield 54.

  The shield 54 is a fan-shaped square tube coaxial with the cylindrical electrode 51 and is larger than the cylindrical electrode 51. The shield 54 is connected to the chamber 20. Specifically, the shield 54 is erected from the edge of the opening 21 a of the chamber 20, and the end extending toward the inside of the chamber 20 is located at the same height as the opening 51 a of the cylindrical electrode 51. Since the shield 54 acts as a cathode like the chamber 20, it is preferable that the shield 54 be made of a conductive metal member having a small electric resistance. The shield 54 may be molded integrally with the chamber 20 or may be attached to the chamber 20 using a fixing bracket or the like.

  The shield 54 is provided to stably generate plasma in the cylindrical electrode 51. Each side wall of the shield 54 is provided so as to extend substantially parallel to each side wall of the cylindrical electrode 51 via a predetermined gap. If the gap becomes too large, the capacitance will be reduced, or the plasma generated in the cylindrical electrode 51 will enter the gap, so it is desirable that the gap be as small as possible. However, even if the gap becomes too small, the electrostatic capacity between the cylindrical electrode 51 and the shield 54 becomes large, which is not preferable. The size of the gap may be appropriately set according to the capacitance required for generating plasma. 4 shows only two side wall surfaces extending in the radial direction of the shield 54 and the cylindrical electrode 51, the radius between the two side wall surfaces extending in the circumferential direction of the shield 54 and the cylindrical electrode 51 is also illustrated. A gap having the same size as the side wall surface in the direction is provided.

  In addition, a process gas introduction part 55 is connected to the cylindrical electrode 51. The process gas introduction unit 55 includes a gas supply source of a process gas G2 (not shown), a pump, a valve, and the like in addition to piping. The process gas introduction unit 55 introduces the process gas G 2 into the cylindrical electrode 51. As described above, the process gas G2 can be appropriately changed depending on the purpose of processing.

  An RF power source 56 for applying a high frequency voltage is connected to the cylindrical electrode 51. A matching box 57 that is a matching circuit is connected in series to the output side of the RF power source 56. The RF power source 56 is also connected to the chamber 20. When a voltage is applied from the RF power source 56, the cylindrical electrode 51 acts as an anode, and the chamber 20, the shield 54, and the turntable 31 act as a cathode. The matching box 57 stabilizes the plasma discharge by matching the impedance on the input side and the output side. The chamber 20 and the turntable 31 are grounded. The shield 54 connected to the chamber 20 is also grounded. Both the RF power source 56 and the process gas introduction part 55 are connected to the cylindrical electrode 51 through a through hole provided in the housing 53.

  When argon gas, which is process gas G2, is introduced from the process gas introduction section 55 into the cylindrical electrode 51 and a high frequency voltage is applied from the RF power source 56 to the cylindrical electrode 51, the argon gas is turned into plasma, and electrons, ions and radicals are produced. Etc. occur.

(Load lock part)
The load lock unit 60 carries the tray 34 on which the unprocessed electronic component 10 is mounted from the outside via the mounting unit 35 to the vacuum chamber 21 by a conveying unit (not shown) while the vacuum of the vacuum chamber 21 is maintained. In addition, the tray 34 on which the processed electronic component 10 is mounted via the mounting portion 35 is unloaded from the vacuum chamber 21. Since the load lock unit 60 can be of a known structure, description thereof is omitted.

[Control device]
The control device 70 is a device that controls each part of the film forming apparatus 100. The control device 70 can be configured by, for example, a dedicated electronic circuit or a computer that operates with a predetermined program. That is, the control contents are programmed with respect to the control relating to the introduction and exhaust of the sputtering gas G1 and the process gas G2 into the vacuum chamber 21, the control of the power supply unit 6 and the RF power supply 56, the control of the rotation of the rotary table 31, and the like. It is executed by a processing device such as a PLC or a CPU, and can cope with various film forming specifications.

  Specifically controlled contents are initial exhaust pressure of the film forming apparatus 100, selection of the sputtering source 4, power applied to the target 41 and the cylindrical electrode 51, flow rates, types, and introduction of the sputtering gas G1 and the process gas G2. Examples thereof include time and exhaust time, film formation time, and rotational speed of the motor 32.

  The configuration of the control device 70 for executing the operation of each unit as described above will be described with reference to FIG. 7 which is a virtual functional block diagram. That is, the control device 70 includes a mechanism control unit 71, a power supply control unit 72, a storage unit 73, a setting unit 74, and an input / output control unit 75.

  The mechanism control unit 71 is a processing unit that controls drive sources such as the exhaust unit 23, the gas supply unit 25, the process gas introduction unit 55, the motor 32 of the transfer unit 30, the load lock unit 60, valves, switches, and a power source. . The power supply control unit 72 is a processing unit that controls the power supply unit 6 and the RF power supply 56.

  The control device 70 selects the film formation processing unit 40 so that the film formation processing unit of any one film formation material does not perform film formation while the film formation processing unit of any one film formation material performs the film formation. Control. That is, the power supply control unit 72 does not apply a voltage to the target 41 of the film formation processing unit 40B while applying a voltage to the target 41 of the film formation processing unit 40A to perform film formation. In addition, while a voltage is applied to the target 41 of the film forming unit 40B to perform film formation, no voltage is applied to the target 41 of the film forming unit 40A.

  The memory | storage part 73 is a structure part which memorize | stores the information required for control of this embodiment. The setting unit 74 is a processing unit that sets information input from the outside in the storage unit 73. The input / output control unit 75 is an interface for controlling signal conversion and input / output with each unit to be controlled.

  Further, an input device 76 and an output device 77 are connected to the control device 70. The input device 76 is input means such as a switch, a touch panel, a keyboard, and a mouse for an operator to operate the film forming apparatus 100 via the control device 70. For example, selection of the sputtering source 4 for film formation can be input by the input means.

  The output device 77 is output means such as a display, a lamp, and a meter that makes information for confirming the state of the device visible to the operator. For example, the deposition positions M1 and M2 corresponding to the sputtering source 4 that performs film formation and the processing position M3 that performs surface treatment are displayed on the output device 77 separately from positions where film formation or processing is not performed. can do.

[Operation]
The operation of the present embodiment as described above will be described below with reference to FIGS. 8 and 9 in addition to FIGS. Although not shown, the film forming apparatus 100 carries in, conveys, and unloads the tray 34 on which the electronic component 10 is mounted via the placing unit 35 by a conveying unit such as a conveyor or a robot arm.

  As shown in FIGS. 5 and 8A, the electronic component 10 is attached in a matrix with a space on the attachment region S in the frame 37 of the placement unit 35. A plurality of such placement portions 35 are mounted on the placement surface 34 a of the tray 34. Accordingly, as shown in FIG. 8B, the second contact surface 38b of the contact sheet 38 is in close contact with the placement surface 34a. As will be described later, the adhesive sheet 38 attached to the mounting surface 34a and the adhesive sheet 38 formed on the mounting surface 34a by coating, application, processing, or the like are provided on the mounting surface 34a. The non-adhesive surface 36b of the holding sheet 36 attached to the frame 37 may be attached to the contact sheet 38. That is, the configuration in which the holding sheet 36 and the contact sheet 38 are integrated in the process in which the placement unit 35 is placed on the tray 34, such as the holding sheet 36 being attached to the contact sheet 38 provided on the tray 34, It is included in the aspect in which the mounting portion 35 includes the holding sheet 36 and the contact sheet 38. In the case of the contact sheet 38 formed on the placement surface 34a by pasting, coating, application, processing, or the like, the boundary surface between the contact sheet 38 and the tray 34 becomes the second contact surface 38b.

  The plurality of trays 34 are sequentially carried into the chamber 20 by the conveying means of the load lock unit 60. The turntable 31 sequentially moves the empty holding unit 33 to the place where the load lock unit 60 carries in. The holding unit 33 individually holds the trays 34 carried in by the conveying unit. In this way, as shown in FIGS. 2 and 3, all the trays 34 on which the electronic components 10 to be deposited are mounted are placed on the rotary table 31.

  A film forming process for the electronic component 10 introduced into the film forming apparatus 100 as described above will be described with reference to FIGS. In the following operation, the surface of the electronic component 10 is cleaned and roughened by the surface treatment unit 50, and then the electromagnetic wave shielding film 13 is formed on the surface of the electronic component 10 by the film forming units 40A and 40B. It is an example. The electromagnetic wave shielding film 13 is formed by alternately laminating SUS layers and Cu layers. The SUS layer directly formed on the electronic component 10 serves as a base for increasing the degree of adhesion with the mold resin and Cu. The intermediate Cu layer is a layer having a function of shielding electromagnetic waves. The uppermost SUS layer is a protective layer for preventing Cu rust and the like.

  First, the exhaust part 23 is evacuated by evacuating the vacuum chamber 21 and reducing the pressure. The turntable 31 rotates and reaches a predetermined rotation speed. In the processing unit 5, the electronic component 10 passes through a position facing the opening 51 a of the cylindrical electrode 51. In the processing unit 5, argon gas as the process gas G <b> 2 is introduced from the process gas introduction unit 55 to the cylindrical electrode 51, and a high frequency voltage is applied to the cylindrical electrode 51 from the RF power source 56. Argon gas is turned into plasma by application of a high-frequency voltage, and electrons, ions, radicals, and the like are generated. The plasma flows from the opening 51a of the cylindrical electrode 51 serving as the anode to the turntable 31 serving as the cathode. When the ions in the plasma collide with the surface of the electronic component 10 passing under the opening 51a, the surface is cleaned and roughened. And if the surface treatment time by the surface treatment part 50 passes, the surface treatment part 50 will be stopped. That is, the supply of the process gas G2 from the process gas introduction unit 55 and the application of the voltage by the RF power source 56 are stopped.

  Next, the gas supply unit 25 of the film formation processing unit 40 </ b> A supplies the sputtering gas G <b> 1 around the target 41. Under this state, the electronic component 10 held by the holding unit 33 moves on the conveyance path L along a locus that draws a circle, and passes through a position facing the sputtering source 4.

  Next, the power supply unit 6 applies power to the target 41 only in the film forming unit 40A. Thereby, the sputtering gas G1 is turned into plasma. In the sputtering source 4, ions generated by the plasma collide with the target 41 and fly particles of the film forming material. For this reason, particles of the film forming material are deposited on the surface of the electronic component 10 that passes through the film forming position M1 of the film forming processing unit 40A, and a film is generated. Here, a SUS layer is formed. At this time, the electronic component 10 passes through the film formation position M2 of the film formation processing unit 40B. However, since power is not applied to the target 41 in the film formation processing unit 40B, the film formation process is not performed, and the electronic component 10 Not heated. In addition, the electronic component 10 is not heated in regions other than the film forming positions M1 and M2. Thus, the electronic component 10 emits heat in a region that is not heated.

  When the film formation time by the film formation processing unit 40A has elapsed, the film formation processing unit 40A is stopped. That is, the application of power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film formation processing unit 40 </ b> B applies power to the target 41. Thereby, the sputtering gas G1 is turned into plasma. In the sputtering source 4, ions generated by the plasma collide with the target 41 and fly particles of the film forming material. For this reason, on the surface of the electronic component 10 that passes through the film forming position M2 of the film forming processing unit 40B, the film forming material particles are deposited every time the electronic component 10 passes, and a film is generated. Here, a Cu layer is formed. This layer becomes a part of the layer of the electromagnetic wave shielding film 13. At this time, the electronic component 10 passes through the film formation position M1 of the film formation processing unit 40A. However, since no power is applied to the target 41, the film formation processing unit 40A is not subjected to film formation processing, and the electronic component 10 Not heated. In addition, the electronic component 10 is not heated in regions other than the film forming positions M1 and M2. Thus, the electronic component 10 emits heat in a region that is not heated.

  When the film formation time by the film formation processing unit 40B has elapsed, the film formation processing unit 40B is stopped. That is, the application of power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film formation processing unit 40 </ b> A applies power to the target 41. Thereby, the sputtering gas G1 is turned into plasma. In the sputtering source 4, ions generated by the plasma collide with the target 41 and fly particles of the film forming material. For this reason, particles of the film forming material are deposited on the surface of the electronic component 10 that passes through the film forming position M1 of the film forming processing unit 40A, and a film is generated. Here, a SUS layer is formed. At this time, the electronic component 10 passes through the film formation position M2 of the film formation processing unit 40B. However, since no power is applied to the target 41, the film formation processing unit 40B is not subjected to film formation processing, and the electronic component 10 Not heated. In addition, the electronic component 10 is not heated in regions other than the film forming positions M1 and M2. Thus, the electronic component 10 emits heat in a region that is not heated.

  When the film formation time by the film formation processing unit 40A has elapsed, the film formation processing unit 40A is stopped. That is, the application of power to the target 41 by the power supply unit 6 is stopped. In this manner, by repeating the film formation by the film formation processing units 40A and 40B, a film in which the SUS film, the Cu film, and the SUS film are stacked is formed. Further, by repeating similar film formation, a film having more than three layers can be formed. As a result, the electromagnetic wave shielding film 13 is formed on the top and side surfaces of the package 12 of the electronic component 10 from the state shown in FIG. 9A, as shown in FIG. 9B.

  During the film forming process as described above, the turntable 31 continues to rotate and continues to circulate and convey the tray 34 on which the electronic component 10 is mounted. After the film forming process is completed, the tray 34 on which the electronic component 10 is mounted is sequentially positioned on the load lock unit 60 by the rotation of the rotary table 31 and is carried out to the outside by the transport unit. As shown in FIG. 8C, the placement unit 35 is peeled off from the tray 34 that is unloaded by the holding sheet 36 being peeled off from the contact sheet 38. That is, the contact sheet 38 is separated from the placement unit 35. Thus, the contact sheet 38 remaining on the tray 34 can be reused as it is. That is, the non-adhesive surface 36 b of the holding sheet 36 on which the electronic component 10 to be processed next is brought into close contact with the first close contact surface 38 a of the close contact sheet 38 on the tray 34, and the tray 34 is carried into the vacuum chamber 21. By doing so, the film forming process can be performed in the same manner as described above. Even in such an aspect, the holding sheet 36 is attached to the contact sheet 38, whereby the placement unit 35 including the contact sheet 38 is configured, and the film forming apparatus 100 including the placement unit 35 is configured. It will be. If the adhesive force of the contact sheet 38 decreases after multiple uses, the contact sheet 38 may be peeled off from the tray 34 and the placement unit 35 including the new contact sheet 38 may be placed on the tray 34. The number of times that the contact sheet 38 can be used can be set by experiments or the like. When the contact sheet 38 is changed, only the contact sheet 38 is renewed, and both the holding sheet 36 and the frame 37 are reused, or only one of them is reused and the other is renewed. You may use a new one. In addition, after peeling off the holding sheet 36, the contact sheet 38 may be removed from the tray 34 without using the contact sheet 38 again, and may be made disposable. That is, each time the contact sheet 38 remaining on the tray 34 is peeled off and discarded, the placement unit 35 including the contact sheet 38 may be placed on the tray 34.

[Causes of heating of electronic components]
As described above, the electronic component 10 can release heat in an unheated region. This release of heat is performed mainly by conducting heat to the tray 34 via the mounting portion 35. However, when the adhesive sheet 38 is not provided as in the present embodiment, the following problem occurs.

(1) When the bottom surface of the holding sheet 36 of the placement unit 35 is not sticky The top surface of the holding sheet 36 of the placement unit 35 is provided with an adhesive surface 36a to which the electronic component 10 is attached. The bottom surface of the sheet 36 does not have adhesiveness. For this reason, a gap is generated between the bottom surface of the holding sheet 36 and the placement surface 34 a simply by placing the placement portion 35 on the placement surface 34 a of the tray 34. That is, since the surface of the holding sheet 36 and the surface of the mounting surface 34a have fine irregularities, the contact area is about 10% of the whole. The space that is not in contact has no heat conduction because it is a vacuum. For this reason, it becomes difficult to transfer the heat of the electronic component 10 to the tray 34.

(2) When the bottom surface of the holding sheet 36 of the placement unit 35 is sticky In order to deal with the problem (1), it is conceivable that the bottom surface of the holding sheet 36 is sticky. Then, the mounting portion 35 can be brought into close contact with the mounting surface 34a of the tray 34, and the gap between the bottom surface of the holding sheet 36 and the mounting surface 34a is greatly reduced, so that the thermal conductivity is improved. However, in this case, a step of peeling off the bottom surface of the holding sheet 36 of the mounting portion 35 from the mounting surface 34a of the tray 34 is necessary after the film forming process. When the mounting portion 35 is peeled off from the mounting surface 34a, it is difficult to transmit the force uniformly to the adhered surface. Therefore, the peeling force is applied to a part and the frame 37 and the holding sheet 36 can be distorted. There is sex. If the frame 37 and the holding sheet 36 are distorted in this way, the flatness of the arrangement surface of the electronic component 10 is lost or the arrangement interval of the electronic component 10 varies, which hinders subsequent processes such as pickup. Come.

  Further, when the electronic component 10 is picked up from the holding sheet 36, it is pushed up and peeled off from the bottom surface of the holding sheet 36 one by one with a pin. Accurate pick-up is not possible due to changes in contact position and contact area. Further, when the contacted pin is pulled away from the holding sheet 36, the holding sheet 36 is pulled while being attached to the pin, and then the adhesive sheet is peeled off due to the adhesive force of the holding sheet 36 being peeled off. As a result, there is a possibility that the electronic component 10 may be affected by displacement or peeling.

[Reason for improving heat dissipation of electronic components]
In this embodiment, the surface on the opposite side of the adhesive surface 36a of the holding sheet 36 of the mounting portion 35 is a non-adhesive surface 36b that does not have adhesiveness. However, the holding sheet 36 is in close contact with the placement surface 34 a of the tray 34 via the contact sheet 38. For this reason, the heat of the electronic component 10 is transmitted to the tray 34 through the holding sheet 36 and the contact sheet 38. Therefore, heating of the electronic component 10 is suppressed.

  Further, the adhesive force between the first contact surface 38a and the non-adhesive surface 36b is smaller than the adhesive force between the second contact surface 38b and the placement surface 34a. Therefore, when the holding sheet 36 is detached from the tray 34, the holding sheet 36 is easily peeled off from the first contact surface 38a in a state where the second contact surface 38b is in close contact with the placement surface 34a. Therefore, the frame 37 and the holding sheet 36 are not easily distorted. Since the side opposite to the adhesive surface 36a of the holding sheet 36 is the non-adhesive surface 36b, there is no problem that the holding sheet 36 adheres to the pins when the electronic component 10 is picked up.

[Function and effect]
In the present embodiment, a chamber 20 that is a container into which a sputtering gas G1 is introduced, a transport unit 30 that is provided in the chamber 20 and circulates and transports the electronic component 10, and an electronic component 10 that is circulated and transported by the transport unit 30 And a sputtering source 4 for depositing a film forming material by sputtering to form a film, and a film forming processing unit 40 for forming a film on the electronic component 10 by the sputtering source 4 and a transfer unit 30. And a tray 34 that is mounted on the mounting surface 34a and on which the electronic component 10 is mounted.

  The mounting portion 35 has a pressure-sensitive adhesive surface 36a on one surface, a holding sheet 36 having a non-adhesive surface 36b that does not have adhesive on the other surface, and a non-adhesive surface on one surface. An adhesive sheet 38 having an adhesive first adhesive surface 38a that is in close contact with 36b, and an adhesive second adhesive surface 38b that is in close contact with the mounting surface 34a of the tray 34 on the other surface; The adhesive surface 36a has a pasting region S for pasting the electronic component 10, and the first adhesion surface 38a is at least over the entire region of the non-tacky surface 36b corresponding to the pasting region S. It is in close contact.

  For this reason, the heat from the electronic component 10 is transmitted to the tray 34 through the holding sheet 36 and the contact sheet 38 and efficiently dissipated, so that the electronic component 10 is not complicated and enlarged. Can be suppressed. Further, it is not necessary to use electric power for cooling, and maintenance becomes easy.

  A frame 37 that defines part or all of the outer edge of the pasting region S is pasted on the adhesive surface 36a of the holding sheet 36, and the first contact surface 38a is a region of the non-adhesive surface 36b corresponding to the pasting region S. In addition to this, it is also in close contact with the region of the non-adhesive surface 36 b corresponding to the frame 37.

  For this reason, the heat from the frame 37 is also transmitted to the tray 34 via the holding sheet 36 and the contact sheet 38 and efficiently dissipated. Since the frame 37 is harder than the holding sheet 36, when the holding sheet 36 is peeled from the adhesion sheet 38, the sticking area S surrounded by the frame 37 is stabilized and the influence on the electronic component 10 is suppressed. Can do. However, the frame 37 is also heated in the same manner as the electronic component 10 in the film forming process or the like. In the present embodiment, the cooling effect by the contact sheet 38 can also be obtained for the frame 37.

  Further, when the adhesive force between the first contact surface 38a and the non-adhesive surface 36b is Fa and the adhesive force between the second contact surface 38b and the placement surface 34a is Fb, Fa <Fb. More preferably, the first contact surface 38a is formed of a material whose peeling resistance with respect to the non-adhesive surface 36b is smaller than the peeling resistance with respect to the mounting surface 34a of the second contact surface 38b.

  For this reason, when the contact sheet 38 is separated from the placing portion 35, the contact sheet 38 remains on the tray 34 side, and the holding sheet 36 is easily peeled off. Since the holding sheet 36 can be peeled from the contact sheet 38 with a light force, deformation of the holding sheet 36 can be suppressed.

  Moreover, the contact sheet 38 has a thermal conductivity of 0.1 W / (m · K) or more. Thereby, heat dissipation of the electronic component 10 is promoted and heating is prevented.

[Test results]
The test results of measuring the temperature by actually performing the film forming process operation in the above-described procedure using the film forming apparatus of this embodiment and the film forming apparatus of the comparative example will be described below. However, no electronic component is placed on the placement portion. Assuming that the temperature of the film is substantially equal to the temperature of the electronic component, the temperature of the holding sheet was measured with a thermocouple. The film forming conditions of each layer of the electromagnetic wave shielding film are as shown in FIG. Ar bombardment is also referred to as ion bombardment, and is cleaning and roughening treatment with Ar, and corresponds to the above-described surface treatment.

(Comparative example)
In the comparative example, a PET film was used as a holding sheet, and film formation was performed without using an adhesive sheet. The result is shown in FIG. In this test, the temperature increased to about 50 ° C. by the surface treatment, increased to about 80 ° C. by SUS film formation of the underlayer, and further increased to about 145 ° C. by Cu film formation. In subsequent SUS film formation of the protective layer, the temperature dropped to about 110 ° C.

  When a general semiconductor package exceeds 150 ° C., the resin constituting the package is easily destroyed. For this reason, it is not preferable to be heated to about 145 ° C., which is close to 150 ° C. In particular, when the temperature exceeds 100 ° C., moisture and adhesive gas are released from the holding sheet and the adhesive sheet, and the film quality may be deteriorated, for example, the resistance value is increased. For this reason, in the case of such a film forming apparatus, it is preferable to have a cooling mechanism.

(Example)
In Examples, a film was formed using a PET film as a holding sheet and a PET film as an adhesion sheet. The result is shown in FIG. In this test, the surface treatment increased only to about 35 ° C., and increased only to about 40 ° C. for the SUS film formation of the underlayer and further to about 60 ° C. for the Cu film formation. In subsequent SUS film formation of the protective layer, the temperature dropped to about 50 ° C. Thus, in the present invention, it can be seen that the temperature rise is significantly suppressed. In FIG. 11 and FIG. 12, there are places where the measured values fluctuate up and down at fine time intervals due to the presence of noise, but the overall trend does not change.

[Other Embodiments]
The present invention is not limited to the above embodiment, and includes the following aspects.
(1) In the above embodiment, the holding sheet 36 and the contact sheet 38 are flat. However, this means that the holding sheet 36 and the contact sheet 38 are flat, and the surface is not limited to be flat. Since the adhesive surface 36a of the holding sheet 36, the first adhesive surface 38a, and the second adhesive surface 38b of the adhesive sheet 38 are adhesive surfaces, there are fine irregularities. Furthermore, the first contact surface 38a and the second contact surface 38b of the contact sheet 38 may have a groove shape. For example, a groove communicating with the outside is formed in one or both of the first contact surface 38a and the second contact surface 38b. The groove is preferably small enough not to impede the cooling effect. By providing such a groove, there is an effect that when the holding sheet 36 and the contact sheet 38 are bonded together, even if bubbles are formed on the contact surface, the bubbles are easily removed from the groove. In this case, the shape of the contact sheet 38 divided by the grooves may be a polygonal shape such as a quadrangle, or a closed curve shape such as a circle or an ellipse. Furthermore, the mounting surface 34a of the tray 34 is not limited to a flat surface. Concavities and convexities that coincide with each other may be formed on each of the placement surface 34a and the second contact surface 38b of the contact sheet 38 to improve thermal conductivity by increasing the surface area.

(2) As a film forming material, various materials that can be formed by sputtering can be applied. For example, Al, Ag, Ti, Nb, Pd, Pt, Zr, etc. can be used as the electromagnetic wave shielding film. Furthermore, Ni, Fe, Cr, Co, etc. can be used as a magnetic body. Furthermore, SUS, Ni, Ti, V, Ta, or the like can be used as the underlying adhesion layer, and SUS, Au, or the like can be used as the outermost protective layer.

(3) As the form of the package 12, for example, any form that can be used at present or in the future such as BGA, LGA, SOP, QFP, and WLP is applicable. The electronic component 10 can be electrically connected to the outside with, for example, a hemispherical material such as BGA provided on the bottom surface, a planar material such as LGA, or a thin plate such as SOP or QFP provided on the side surface. However, any terminal that can be used at present or in the future is applicable, and the position of formation is not limited. Moreover, the element 11 sealed inside the electronic component 10 may be singular or plural.

(4) The number of targets in the film forming position is not limited to two. There may be one target or three or more targets. Also, the number of film forming positions may be two or less, or four or more.

(5) The number of trays and electronic components that are simultaneously conveyed by the conveying unit and the number of holding units that hold the trays may be at least one, and are not limited to the numbers exemplified in the above embodiment. That is, a mode in which one electronic component circulates and repeats film formation may be employed, or a mode in which two or more electronic components circulate and repeat film formation may be employed.

(6) Cleaning or surface treatment by etching or ashing may be performed in a chamber different from the chamber having the film forming position. In the case of performing oxidation treatment or post-oxidation treatment, oxygen can be used as the process gas G2. When nitriding is performed, nitrogen can be used as the process gas G2.

(7) In the above embodiment, the rotary table 31 is rotated in a horizontal plane. However, the direction of the rotation surface of the transport unit is not limited to a specific direction. For example, it can be a rotating surface that rotates in a vertical plane. Furthermore, the conveyance means which a conveyance part has is not limited to a rotary table. For example, a cylindrical member having a holding part that holds a workpiece may be a rotating body that rotates about an axis. Further, the trajectory of the circulation conveyance is not limited to the circumference. The endless transfer path widely includes a mode in which the transfer is circulated. For example, it may be a rectangle or an ellipse, or may include a crank or a meandering path. The conveyance path may be constituted by, for example, a conveyor.

  Furthermore, the present invention includes a chamber 20 that is a container into which a sputtering gas G1 is introduced, and a sputtering source 4 that is provided in the chamber 20 and deposits a film forming material by sputtering to form a film. A film forming processing unit 40 for forming a film on the electronic component 10, a tray 34 having a mounting surface 34 a installed in a processing region by the film forming processing unit 40, and mounted on the mounting surface 34 a to mount the electronic component 10. The film forming apparatus 100 having the mounting unit 35 for performing the above-described process is only required to include the mounting unit 35 as described above. For this reason, a film forming apparatus that forms a film in a stationary state without circulating and transporting the electronic component 10 may be used. The tray 34 on which the electronic component 10 is mounted via the placement unit 35 may be carried in, placed in the processing region, and sputtering may be performed without changing the relative position with respect to the target 41.

(8) In the above embodiment, the film forming material is selectively deposited one by one to form a film. However, the present invention is not limited to this, and it is only necessary to form a film including a plurality of layers of film forming materials by selectively depositing the film forming materials. For this reason, two or more kinds of film forming materials may be deposited simultaneously. For example, the electromagnetic wave shielding film may be formed of an alloy of Co, Zr, and Nb. In such a case, among the plurality of film forming units, a film forming unit using Co as the film forming material, a film forming unit using Zr as the film forming material, and a film forming process using Nb as the film forming material. The film may be formed by selecting parts simultaneously.

  In this case, of the circumferential trajectories, the trajectory passing through the part other than the film formation position during film formation is longer than the trajectory passing through the film formation position during film formation. It is preferable to select a film formation processing unit to be used for the film, or to set an arrangement of delimiters for dividing the film formation processing unit.

  In other words, in either case where film formation is performed by selecting a plurality of one type or a plurality of types of film formation processing units, or in the case where film formation is performed by selecting a single film formation processing unit. The film processing unit used for film formation is longer so that the trajectory passing through the part other than the film forming position during film formation is longer than the path passing through the film forming position during film formation. It is preferable to select or set an arrangement of a delimiter that delimits the film formation processing unit.

(9) Although the embodiment of the present invention and the modification of each part have been described above, the embodiment and the modification of each part are presented as examples, and are not intended to limit the scope of the invention. . These novel embodiments described above can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the spirit of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention and included in the invention described in the claims.

DESCRIPTION OF SYMBOLS 10 Electronic component 11 Element 12 Package 13 Electromagnetic wave shielding film 14 Substrate 100 Film formation apparatus 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Vacuum chamber 22 Exhaust port 23 Exhaust unit 24 Inlet port 25 Gas supply unit 30 Transport unit 31 Rotary table 32 Motor 33 Holding portion 34 Tray 34a Placement surface 34b Peripheral wall portion 35 Placement portion 36 Holding sheet 36a Adhesive surface 36b Non-adhesion surface 37 Frame 37a Through hole 38 Adhesion sheet 38a First adhesion surface 38b Second adhesion surface 40, 40A, 40B Deposition processing section 4 Sputtering source 41, 41A, 41B Target 42 Backing plate 43 Electrode 44 Separating section 44a, 44b Wall plate 5 Processing unit 51 Cylindrical electrode 51a Opening 51b Flange 52 Insulating member 53 Housing 54 Shield 55 Process Gas inlet 56 RF power supply 7 Matching Box 6 Power Supply Unit 60 Load Locking Unit 70 Control Device 71 Mechanism Control Unit 72 Power Supply Control Unit 73 Storage Unit 74 Setting Unit 75 Input / Output Control Unit 76 Input Device 77 Output Device E Exhaust L Transport Paths M, M1, M2 Film Formation Position M3 Processing position G Reaction gas G1 Sputtering gas G2 Process gas S Pasting area

Claims (6)

A chamber which is a container into which a sputtering gas is introduced;
A film deposition processing unit that is provided in the chamber and has a sputtering source for depositing a film deposition material by sputtering to form a film on the electronic component;
A tray installed in a processing region by the film forming processing unit and having a mounting surface;
Placed on the placement surface, a placement unit for mounting the electronic component,
Have
The placement section is
A holding sheet having an adhesive surface having adhesiveness on one side and a non-adhesive surface not having adhesiveness on the other surface;
One surface has an adhesive first adhesion surface that adheres to the non-adhesion surface, and the other surface has an adhesive second adhesion surface that adheres closely to the mounting surface of the tray. An adhesive sheet;
Have
The adhesive surface has a pasting region for pasting the electronic component,
The film forming apparatus, wherein the first contact surface is in close contact with the entire region of the non-adhesive surface corresponding to the pasting region. A chamber which is a container into which a sputtering gas is introduced;
A transport unit provided in the chamber for circulating and transporting electronic components;
The electronic component circulated and conveyed by the conveying unit has a sputtering source for depositing a film forming material by sputtering and forming a film, and a film forming processing unit for forming a film on the electronic component by the sputtering source;
A tray transported by the transport unit and having a mounting surface;
Placed on the placement surface, a placement unit for mounting the electronic component,
Have
The placement section is
A holding sheet having an adhesive surface having adhesiveness on one side and a non-adhesive surface not having adhesiveness on the other surface;
One surface has an adhesive first adhesion surface that adheres to the non-adhesion surface, and the other surface has an adhesive second adhesion surface that adheres closely to the mounting surface of the tray. An adhesive sheet;
Have
The adhesive surface has a pasting region for pasting the electronic component,
The film forming apparatus, wherein the first contact surface is in close contact with the entire region of the non-adhesive surface corresponding to the pasting region. On the adhesive surface of the holding sheet, a frame that defines a part or all of the outer edge of the pasting region is pasted,
The first contact surface is in close contact with a non-adhesive surface region corresponding to the frame in addition to the entire non-adhesive surface region corresponding to the pasting region. Or the film-forming apparatus of Claim 2.   The relation of Fa <Fb is satisfied, where Fa is an adhesive force between the first contact surface and the non-adhesive surface, and Fb is an adhesive force between the second contact surface and the mounting surface. 4. The film forming apparatus according to any one of 1 to 3.   The contact sheet is formed of a material having a peeling resistance with respect to the non-adhesive surface of the first contact surface smaller than a peeling resistance with respect to the placement surface of the second contact surface. Item 5. The film forming apparatus according to any one of Items 1 to 4.   The film forming apparatus according to claim 1, wherein the adhesion sheet has a thermal conductivity of 0.1 W / (m · K) or more.

Images