JP2020158866A - Film deposition apparatus - Google Patents

Abstract

To provide a film deposition apparatus having a simple structure and capable of regulating heating of an electronic component.SOLUTION: A film deposition apparatus includes a chamber to which a sputter gas is introduced, a film deposition processing unit that is installed in the chamber, having a sputter source for depositing a film deposition material by sputtering, and deposits a film on an electronic component by using the sputter source in the chamber, a transportation plate 140 on which the electronic component to be subjected to film deposition in the chamber is mounted, a transportation device for transporting the transportation plate 140 on a tray 34, the tray 34 to be transported by the transportation device, and support parts 35 arranged on the tray 34 for supporting the transportation plate 140 so as to provide a clearance between the transportation plate 140 and the tray 34.SELECTED DRAWING: Figure 6

Description

The present invention relates to a film forming apparatus.

Wireless communication devices such as mobile phones are equipped with many electronic components such as semiconductor devices. Semiconductor devices are required to suppress the influence of electromagnetic waves on the inside and outside, such as leakage of electromagnetic waves to the outside, in order to prevent the influence on communication characteristics. Therefore, a semiconductor device having a shielding function against electromagnetic waves is used.

Generally, a semiconductor device is formed by mounting a semiconductor chip on an interposer substrate as a substrate for relaying to a mounting substrate and sealing the semiconductor chip with a resin. A semiconductor device having a shielding function has been developed by providing a conductive electromagnetic wave shielding film on the upper surface and the side surface of the sealing resin (see Patent Document 1).

Such an electromagnetic wave shielding film can be a laminated film of a plurality of types of metal materials. For example, an electromagnetic wave shielding film having a laminated structure in which a Cu film is formed on a SUS film and a SUS film is further formed on the Cu film is known.

In the electromagnetic wave shielding film, it is necessary to lower the electrical resistivity in order to obtain a sufficient shielding effect. Therefore, the electromagnetic wave shield film is required to have a certain thickness. In a semiconductor device, it is generally considered that good shielding characteristics can be obtained if the film thickness is about 1 μm to 10 μm. It is known that an electromagnetic wave shielding film having a laminated structure of SUS, Cu, and SUS can obtain a good shielding effect if the film thickness is about 1 μm to 5 μm.

International Publication No. 2013/035819

A plating method is known as a method for forming an electromagnetic wave shield film. However, since the plating method requires a pretreatment step, a plating treatment step, and a wet step such as a posttreatment step such as washing with water, an increase in manufacturing cost of electronic parts is unavoidable.

Therefore, the sputtering method, which is a dry process, is attracting attention. As a film forming apparatus by the sputtering method, a plasma processing apparatus that performs film forming using plasma has been proposed. The plasma processing apparatus introduces an inert gas into a vacuum vessel in which a target is placed and applies a voltage. Ions of the inert gas turned into plasma collide with the target of the film forming material, and the material knocked out from the target is deposited on the work to form a film.

A general plasma processing apparatus is used for forming a film having a thickness of 10 to several hundred nm, which can be formed in a processing time of several tens of seconds to several minutes. However, as described above, it is necessary to form a film having a thickness of micron level as the electromagnetic wave shielding film. Since the sputtering method is a technique for forming a film by depositing particles of a film-forming material on a film-forming object, the thicker the film to be formed, the longer the time required to form the film.

Therefore, in order to form the electromagnetic wave shield film, a processing time of several tens of minutes to one hour, which is longer than that of a general sputtering method, is required. For example, in an electromagnetic wave shield film having a laminated structure of SUS, Cu, and SUS, it may take a little over one hour to obtain a film thickness of 5 μm.

Then, in the sputtering method using plasma, the electronic components are continuously exposed to the heat of plasma during this processing time. As a result, the electronic component may be heated to around 200 ° C. until a film having a thickness of 5 μm is obtained.

On the other hand, the heat resistant temperature of the electronic component is about 200 ° C. for temporary heating of about several seconds to several tens of seconds, but is generally about 150 ° C. for heating exceeding several minutes. Therefore, it has been difficult to form a micron-level electromagnetic wave shielding film by using a general plasma sputtering method.

An object of the present invention is to provide a film forming apparatus capable of suppressing a temperature rise of an electronic component at the time of film forming.

In order to achieve the above object, the film forming apparatus of the present invention has a chamber into which a sputtering gas is introduced and a sputter source provided in the chamber for depositing a film forming material by sputtering to form a film. A film forming processing unit for forming a film on an electronic component in the chamber by the sputtering source, a transfer plate on which the electronic component formed in the chamber is mounted, and the transfer plate are conveyed via a tray. It has a transport device to be used, and a support portion provided on the tray and supporting the transport plate so as to form a gap between the tray and the tray.

According to the present invention, it is possible to provide a film forming apparatus capable of suppressing a temperature rise of an electronic component at the time of film forming.

It is a schematic cross-sectional view which shows the electronic component of an embodiment. It is a perspective view which shows the electronic component, the holding sheet, the frame and the transport plate of embodiment. It is a simplified plan view which shows the film forming apparatus of embodiment. It is explanatory drawing which shows the film formation process of an embodiment. It is a figure which shows the support surface of a transport plate. It is a perspective view which shows the mounting of the transport plate on a tray. It is sectional drawing which shows the mounting of the transport plate on a tray. It is a perspective view which shows the transport part. It is a perspective plan view which shows the transport part. 9 is a schematic vertical sectional view taken along the line AA of FIG. It is explanatory drawing which shows the cooling part. It is a block diagram which shows the control device of embodiment. It is a graph which shows the result of the comparative test. It is sectional drawing which shows the other aspect of the support part. It is a perspective plan view which shows the other aspect of the film-forming part. It is explanatory drawing which shows the other aspect of a cooling part. It is explanatory drawing which shows the other aspect of a cooling part.

An embodiment of the present invention (hereinafter, referred to as the present embodiment) will be specifically described with reference to the drawings.

[Electronic components]
As shown in FIG. 1A, in the electronic component 100 to be formed into a film of the present embodiment, elements such as a semiconductor chip, diode, transistor, capacitor or SAW filter are sealed with an insulating package such as synthetic resin. It is a stopped surface mount component. A semiconductor chip is an integrated circuit such as an IC or LSI in which a plurality of electronic elements are integrated. This electronic component has a substantially rectangular parallelepiped shape, and one surface thereof is an electrode exposed surface 111a. The electrode exposed surface 111a is a surface on which the electrode 112 is exposed and faces the mounting substrate and is connected to the mounting substrate.

The electromagnetic wave shielding film 113 is formed of a material that shields electromagnetic waves. In FIG. 1A, only the electromagnetic wave shielding film 113 is shown in cross section. The electromagnetic wave shielding film 113 is formed on the top surface 111b and the side surface 111c of the electronic component 100, that is, on the outer surface other than the electrode exposed surface 111a. The top surface 111b is the surface opposite to the electrode exposed surface 111a. The side surface 111c is an outer peripheral surface that connects the top surface 111b and the electrode exposed surface 111a and extends at an angle different from the top surface 111b and the electrode exposed surface 111a.

In order to obtain the shielding effect of blocking electromagnetic waves, the electromagnetic wave shielding film 113 may be formed at least on the top surface 111b. A ground pin (not shown) exists on the side surface 111c. The formation of the electromagnetic wave shielding film 113 with respect to the side surface 111c is also for grounding the electromagnetic wave shielding film 113.

The electronic component 100 may be referred to as the electronic component 100 including the electromagnetic wave shielding film 113 in a state where the electromagnetic wave shielding film 113 is formed. Further, the top surface 111b and the side surface 111c are also simply referred to as the top surface 111b and the side surface 111c regardless of whether the electromagnetic wave shielding film 113 is formed or not. That is, the surface of the electromagnetic wave shielding film 113 formed on the top surface 111b of the electronic component 100 is also referred to as the top surface 111b, and the surface of the electromagnetic wave shielding film 113 formed on the side surface 111c is also referred to as the side surface 111c.

[Holding sheet]
FIG. 1B is a side view showing the state of the electronic component 100 after undergoing the film forming process. In FIG. 1B, parts other than the electronic component 100 are shown in cross section. Further, FIG. 2 is a perspective view showing a member for mounting the electronic component 100 in order to receive the film forming process. As shown in FIGS. 1B and 2A, the electronic component 100 is held by a holding sheet 120 having an adhesive surface having adhesiveness on one surface. More specifically, the exposed electrode surface 111a of the electronic component 100 is brought into close contact with the holding sheet 120 in advance, and the electrode 112 is embedded in the holding sheet 120.

The holding sheet 120 is a heat-resistant synthetic resin such as PET (polyethylene terephthalate), PEN (polyethylene naphthalate), and PI (polyimide). The component mounting surface 121 to which the electrode exposed surface 111a of the holding sheet 120 is in close contact and the support surface 122 on the opposite side thereof are adhesive surfaces. As the adhesive surface, an adhesive is applied to the surface of the holding sheet 120, or an adhesive surface having adhesiveness on the surface is used. As the material of the adhesive or the adhesive surface, various adhesive materials such as silicone resin, acrylic resin, urethane resin, and epoxy resin can be used.

The holding sheet 120 of this embodiment is rectangular. As shown in FIG. 2A, the component mounting surface 121 of the holding sheet 120 is formed in an outer frame area 121a extending inward from the end of the holding sheet 120 to a predetermined distance and an inner frame area 121b inside the outer frame area 121a. It is classified. The electronic component 100 is attached to the middle frame region 121b. Of the middle frame area 121b, the area to which the electronic component 100 is attached is the attachment area 121c. In the present embodiment, the region surrounded by the alternate long and short dash line in the figure is the sticking region 121c.

[flame]
The frame 130 is in close contact with the holding sheet 120. That is, as shown in FIGS. 2A and 2B, a rectangular frame-shaped frame 130 is attached to the outer frame area 121a of the holding sheet 120. The frame 130 is made of a metal such as aluminum or SUS, ceramics, resin, or other material having high thermal conductivity. The frame 130 of the present embodiment has a plate shape, and a rectangular through hole 131 is formed in the center. The outer shape of the frame 130 matches the outer shape of the holding sheet 120. The inner edge of the through hole 131 coincides with the outer edge of the middle frame region 121b. The middle frame region 121b is exposed from the through hole 131 of the frame 130.

[Film formation device]
The film forming apparatus S of the present embodiment is an apparatus for forming a film on the electronic component 100. As shown in the plan view of FIG. 3, the film forming apparatus S includes a plate mounting section 200, a film forming section 300, a plate detaching section 400, a cooling section 500, and a transport section 600. As shown in FIGS. 2 (B), 2 (C), 3 [1], and 4 [1], the holding sheet 120 in which the electronic component 100 and the frame 130 are in close contact with each other has a transport plate 140 on its support surface 122. Is in close contact. The close contact of the transport plate 140 is performed at the plate mounting portion 200 shown in FIG. This is referred to as a plate mounting process.

Further, as shown in FIGS. 3 [2] and 4 [2], the transport plate 140 to which the holding sheet 120 is in close contact is placed on the tray 34. This is referred to as a plate mounting process. As shown in FIGS. 3 [3] and 4 [3], the tray 34 is carried into the film forming section 300 to form the electronic component 100. This is referred to as a film forming process. In the process of this film formation, the electronic component 100 is heated. The transport plate 140 functions as a heat dissipation path that releases heat from the electronic component 100 and suppresses excessive heat storage.

After the film formation, the tray 34 is carried out from the film forming section 300, and the transport plate 140 is taken out from the tray 34 as shown in FIGS. 3 [4] and 4 [4]. This is referred to as a plate removal process. Then, as shown in FIGS. 3 [5] and 4 [5], the holding sheet 120 is detached at the plate detaching portion 400. This is referred to as a plate detachment step. Further, as shown in FIGS. 3 [6] and 4 [6], the transport plate 140 is cooled by the cooling unit 500. This is referred to as a plate cooling step. After that, as shown in FIGS. 3 [1] and 4 [1], the holding sheet 120 is brought into close contact with the plate mounting portion 200 again. In this way, the holding sheet 120 is brought into close contact with the transport plate 140.

In this way, the transport plate 140 is repeatedly used through a plate mounting step, a plate mounting step, a film forming step, a plate taking out step, a plate detaching step, and a plate cooling step.

(Transport plate)
The transport plate 140 is a plate-like body made of a metal having thermal conductivity and conductivity such as aluminum and SUS. As shown in FIG. 2B, of the surfaces of the transport plate 140, the surface on which the holding sheet 120 is mounted is the mounting surface 141, and the surface opposite to this is the support to be supported by the film forming portion 300. The surface is 142 (see FIG. 5). The support surface 122 of the holding sheet 120 has adhesiveness as described above, and is in close contact with the mounting surface 141 of the transport plate 140. As a result, the electronic component 100 is mounted on the transport plate 140, and a heat transfer area from the electronic component 100 to the transport plate 140 is secured. The phrase "the electronic component 100 is mounted on the transport plate 140" means that the electronic component 100 is in direct or indirect contact with the transport plate 140 so that heat can be transferred to the transport plate 140. The case where the electronic component 100 is placed on the transport plate 140 by using gravity is not limited, and the electronic component 100 may be in direct or indirect contact regardless of the direction of the transport plate 140. Further, in order to dissipate heat from the electronic component 100, it is preferable that the transport plate 140 is in close contact with the support surface 122 of the holding sheet 120 over at least the entire region corresponding to the sticking region 121c.

Of the surface of the transport plate 140, the surfaces other than the mounting surface 141, that is, the support surface 142 and the side surface are uneven or porous. The unevenness can be formed by, for example, roughening the surface. Porousness can be formed, for example, by applying anodizing treatment when the transport plate 140 is made of aluminum. Further, as shown in FIG. 5A, the support surface 142 of the transport plate 140 is provided with a regulation portion 143 in a region corresponding to the vicinity of the four corners. The regulation unit 143 of the present embodiment is four circular recess holes having the same depth.

The heat capacity of the transport plate 140 can be larger than the heat capacity of the electronic component 100, more preferably the heat capacity of the holding sheet 120, and is set to, for example, 2500 to 5000 (J / K). As a result, the heat released from the electronic component 100 or the heat received by the holding sheet 120 can be transferred to the transport plate 140 having a large heat capacity and released. As described above, the holding sheet 120 is made of a heat-resistant resin material, but the PET sheet generally used from the viewpoint of cost has a heat-resistant temperature of about 100 ° C. to 150 ° C. When such a sheet is used as the holding sheet 120, when the heat released from the electronic component 100 or the heat received by the holding sheet 120 accumulates in the holding sheet 120 and exceeds the heat resistant temperature, the holding sheet 120 is thermally deformed. , The electronic component 100 may peel off. Therefore, if the transport plate 140 has a heat capacity larger than that of the holding sheet 120, the heat received by the holding sheet 120 can be efficiently released to the transport plate 140. As a result, the thermal deformation of the holding sheet 120 can be suppressed, and the peeling of the electronic component 100 from the holding sheet 120 can be suppressed.

Further, the area of the transport plate 140 (area of the mounting surface 141) when viewed in a plan view is formed so as to be smaller than the area of the holding sheet 120 (area of the component mounting surface 121). For example, the area of the transport plate 140 should be the same as the area of the holding sheet 120, or the outer edge of the transport plate 140 should be smaller than the outer edge of the holding sheet 120 by about 1 mm. When reverse sputtering, which will be described later, is performed, the transport plate 140 also acts as a part of the electrode and is subject to ion collision. However, by preventing the transport plate 140 on which the holding sheet 120 is mounted from being exposed, it is possible to prevent the transport plate 140 from being damaged by sputtering.

(tray)
As shown in FIG. 4, the tray 34 is a member on which the transport plate 140 is mounted and carried in and out of the film forming section 300. As shown in FIGS. 6A and 7A, the tray 34 has a facing surface 34a, a peripheral edge portion 34b, and a support portion 35. The facing surface 34a is one flat surface of a rectangular flat plate and faces the transport plate 140. A peripheral edge portion 34b is formed on the peripheral edge of the facing surface 34a. The peripheral edge portion 34b is a rectangular frame surrounding the facing surface 34a. The tray 34 is made of a conductive material, for example, metal. In the present embodiment, the material of the tray 34 is a metal having thermal conductivity and conductivity such as aluminum or SUS.

The support portion 35 is provided on the tray 34 as shown in FIGS. 6 (A), 6 (B), 7 (A), and (B) so that the transport plate 140 has a gap between the tray 34 and the tray 34. Support. The distance d between the support surface 142 of the transport plate 140 and the facing surface 34a of the tray 34 is preferably a distance d where the film forming material does not wrap around in the film forming process and a heat insulating effect can be obtained, for example, about 2 to 5 mm. , Not limited to this value.

The support portion 35 has a protruding member 35a protruding from the facing surface 34a. The protruding member 35a of the present embodiment is four conical pins. The four pins correspond to the regulation portion 143 of the transport plate 140 and are provided at positions where the tips thereof are inserted into the regulation portion 143. By fitting the projecting member 35a into the regulating portion 143, the movement of the transport plate 140 supported by the supporting portion 35 is restricted. The contact area between the support portion 35 and the transport plate 140 (the total area indicated by the black circles in FIG. 5) is, for example, 5% or less of the area of the support surface 142 of the transport plate 140 in order to suppress heat conduction. Is preferable. However, the preferable ratio may change depending on various factors such as the material, shape, temperature condition, and number of contact points of the transport plate 140 and the support portion 35. Therefore, the present invention is not limited to the description of these ratios. The support portion 35 is made of the same material as the tray 34. The support portion 35 and the tray 34 may be integrally formed or may be formed by combining separately formed members. However, the support portion 35 and the tray 34 have conductivity and are electrically connected to each other.

The support position of the support portion 35, that is, the support position of the transport plate 140 by the protruding member 35a is "distance between the outer circumference of the transport plate 140 and the regulation portion 143> in a state where the protrusion member 35a is fitted in the regulation portion 143. The distance between the outer circumference of the transport plate 140 and the inner circumference of the peripheral edge portion 34b of the tray 34 ”may be set. By doing so, even if the projecting member 35a deviates from the regulating portion 143 of the transport plate 140, the transport plate 140 can be regulated and held on the inner peripheral surface of the peripheral edge portion 34b.

The phrase "the transport plate 140 is supported by the support portion 35" means that the transport plate 140 and the support portion 35 are directly or indirectly supported so that heat transfer between the transport plate 140 and the support portion 35 is suppressed. Means that they come into contact with each other. The case where the transport plate 140 is placed on the support portion 35 by using gravity is not limited, and the transport plate 140 may be in direct or indirect contact regardless of the direction of the support portion 35. In the present embodiment, the transport plate 140 has conductivity, and an electrical connection between the transport plate 140 and the tray 34 is secured via the support portion 35.

Further, the transport plate 140 accumulates heat from the electronic component 100 and heat from the plasma, so that thermal expansion occurs. Therefore, the position of the regulation portion 143 provided on the support surface 142 of the transport plate 140 moves. On the other hand, the tray 34 having the support portion 35 is insulated from the transport plate 140, and even if thermal expansion occurs, a change different from that of the transport plate 140 occurs. Therefore, the position of the support portion 35 and the position of the regulation portion 143 may move relatively during the processing, the support portion 35 may be displaced from the regulation portion 143, and the holding of the transport plate 140 may become unstable. Therefore, by making each of the plurality of regulating portions 143 different in shape, it is possible to allow the transfer plate 140 to be displaced from the support portion 35 due to thermal expansion and maintain stable holding. For example, as shown in FIG. 5B, by making one of the four regulation portions 143 a reference hole 143s and the other three holes larger than the reference hole 143s, the transport plate 140 is heated. Even if it expands, it is possible to allow the support portion 35 to be displaced from the protruding member 35a. Further, in the transport plate 140, two holes provided on the same side as the reference hole 143s are elongated holes along the side, and the holes located diagonally to the reference hole 143s are at least larger in diameter than the reference hole 143s. By forming a large round hole, one corner can be fixed by the reference hole 143s, and the moving direction of the transport plate 140 can be regulated even if thermal expansion occurs.

[Plate mounting part]
Although not shown, the plate mounting portion 200 has a pressing device that causes the holding sheet 120 to be brought into close contact with the conveying plate 140 by pressing the holding sheet 120 against the conveying plate 140. The holding sheet 120 to which the electronic component 100 is crimped in advance and the frame 130 is attached to the plate mounting portion 200, and the transport plate 140 are put into the plate mounting portion 200. This includes the case where the cooled transport plate 140 is thrown into the cooling unit 500 and reused.

[Film film]
The film forming section 300 forms an electromagnetic wave shielding film 113 on the outer surface of each electronic component 100 by sputtering. As shown in FIG. 9, in the film forming section 300, when the rotary table 31 rotates, the electronic component 100 on the tray 34 held by the holding section 33 moves in a circumferential trajectory and faces the sputtering source 4. When passing through the position to be formed, the particles sputtered from the target 41 are adhered to form a film.

As shown in FIGS. 8 and 9, the film forming unit 300 includes a chamber 20, a transfer device 30, a film forming processing unit 40A and 40B, a surface treatment unit 50, a load lock unit 60, and a control device 700.

(Chamber)
The chamber 20 is a container into which the reaction gas G is introduced. The reaction gas G includes a sputtering gas G1 for sputtering and a process gas G2 for various treatments (see FIG. 10). In the following description, when the sputtering gas G1 and the process gas G2 are not distinguished, they may be referred to as a reaction gas G. The sputtering gas G1 is a gas for colliding the generated ions or the like with the targets 41 (41A, 41B) by the plasma generated by the application of electric power to carry out a film formation by sputtering on the surface of the electronic component 100. For example, an inert gas such as argon gas can be used as the sputtering gas G1.

The process gas G2 is a gas for performing surface treatment by etching or ashing. Hereinafter, such surface treatment may be referred to as reverse sputtering. The process gas G2 can be appropriately changed depending on the purpose of treatment. For example, when etching is performed, an inert gas such as argon gas can be used as the etching gas. In the present embodiment, the surface of the electronic component 100 is cleaned and roughened with argon gas. For example, the adhesion of the film can be enhanced by cleaning the surface and roughening the surface on the nano-order.

The space inside the chamber 20 forms a vacuum chamber 21. The vacuum chamber 21 is an airtight space that can be evacuated by decompression. For example, as shown in FIGS. 8 and 10, the vacuum chamber 21 is a cylindrical sealed space formed by the ceiling 20a, the inner bottom surface 20b, and the inner peripheral surface 20c inside the chamber 20.

As shown in FIG. 10, the chamber 20 has an exhaust port 22 and an introduction port 24. The exhaust port 22 is an opening for ensuring the flow of gas between the vacuum chamber 21 and the outside and performing exhaust E. The exhaust port 22 is formed at the bottom of the chamber 20, for example. An exhaust unit 23 is connected to the exhaust port 22. The exhaust unit 23 includes piping, a pump, a valve and the like (not shown). The inside of the vacuum chamber 21 is depressurized by the exhaust treatment by the exhaust unit 23.

The introduction port 24 is an opening for introducing the sputter gas G1 in the vicinity of the target 41 of the vacuum chamber 21. A gas supply unit 25 is connected to the introduction port 24. One gas supply unit 25 is provided for each sputtering source 4. In addition to piping, the gas supply unit 25 includes a gas supply source for reaction gas G (not shown), a pump, a valve, and the like. The gas supply unit 25 introduces the sputter gas G1 into the vacuum chamber 21 from the introduction port 24. The upper part of the chamber 20 is provided with an opening 21a into which the processing unit 5 is inserted, as will be described later.

(Transport section)
The transport device 30 is a device provided in the chamber 20 that circulates and transports the electronic component 100 in a circumferential locus. Circular transport refers to orbiting the tray 34 on which the electronic component 100 is mounted in a circumferential locus. The locus of movement of the tray 34 by the transport device 30 is called a transport path L. The transport device 30 has a rotary table 31, a motor 32, and a holding portion 33. Further, the holding portion 33 holds the tray 34 on which the transport plate 140 is mounted via the supporting portion 35.

The rotary table 31 is a circular plate. The motor 32 is a drive source that applies a driving force to the rotary table 31 to rotate the rotary table 31 around the center of the circle. The holding unit 33 is a component that holds the tray 34 transported by the transport device 30. On the top surface of the rotary table 31, a plurality of holding portions 33 are arranged at positions equal to the circumference. For example, the regions in which the holding portions 33 hold the tray 34 are formed in a direction parallel to the tangent to the circular circle in the circumferential direction of the rotary table 31, and are provided at equal intervals in the circumferential direction. More specifically, the holding portion 33 is a groove, a hole, a protrusion, a jig, a holder, or the like that holds the tray 34. It can be composed of a mechanical chuck and an adhesive chuck.

In this way, the electronic component 100 is positioned on the rotary table 31 by the tray 34 held by the holding portion 33. In this embodiment, since the six holding portions 33 are provided, the six trays 34 are held on the rotary table 31 at intervals of 60 °. However, the number of holding portions 33 may be one or a plurality.

(Film film processing section)
The film forming processing units 40A and 40B are processing units for forming a film on the electronic component 100 conveyed by the conveying device 30. Hereinafter, when the plurality of film forming processing units 40A and 40B are not distinguished, the film forming processing unit 40 will be described. As shown in FIG. 10, the film forming processing section 40 includes a sputtering source 4, a partition section 44, and a power supply section 6.

<Sputter source>
The sputtering source 4 is a supply source of the film-forming material for forming a film by depositing the film-forming material on the electronic component 100 by sputtering. The sputtering source 4 has a target 41, a backing plate 42, and an electrode 43. The target 41 is formed of a film-forming material that is deposited on the electronic component 100 to form a film, and is provided at a position that is separated from and faces the transport path L. As shown in FIG. 9, the targets 41 of the present embodiment are arranged in a direction in which the two targets 41A and 41B are orthogonal to the transport direction, that is, in the radial direction of rotation of the rotary table 31. Hereinafter, when the targets 41A and 41B are not distinguished, the target 41 is used. The bottom surface side of the target 41 faces the electronic component 100 moved by the transport device 30 at a distance. The processing region, which is an execution region on which the film-forming material can be adhered by the two targets 41A and 41B, is larger than the size of the tray 34 in the radial direction of the rotary table 31.

As the film forming material, for example, Cu, Ni, Fe, SUS and the like are used as described later. However, various materials can be applied as long as the material is formed by sputtering. The target 41 has, for example, a cylindrical shape. However, other shapes such as a long cylinder shape and a prism shape may be used.

The backing plate 42 is a member that holds the target 41. The electrode 43 is a conductive member for applying electric power to the target 41 from the outside of the chamber 20. The sputtering source 4 is appropriately provided with a magnet, a cooling mechanism, and the like, if necessary.

<Division>
The partition 44 is a member that partitions the film forming positions M1 and M2 on which the electronic component 100 is formed by the sputtering source 4 and the processing position M3 for surface treatment. Hereinafter, when the film forming positions M1 and M2 are not distinguished, the film forming position M will be described. As shown in FIG. 9, the partition portion 44 has square wall plates 44a and 44b arranged radially from the center of the circumference of the transport path L, that is, the rotation center of the rotary table 31 of the transport device 30. The wall plates 44a and 44b are provided, for example, on the ceiling of the vacuum chamber 21 at a position where the target 41 is sandwiched. The lower end of the partition portion 44 faces the rotary table with a gap through which the electronic component 100 passes. The presence of the partition 44 can prevent the reaction gas G and the film-forming material from diffusing into the vacuum chamber 21.

The film forming positions M1 and M2 and the processing position M3 are spaces separated by the dividing portion 44. Film formation position M1. M2 includes the target 41 of the sputtering source 4. More specifically, as shown in FIG. 9, the film forming positions M1 and M2 and the processing position M3 are formed by the wall plates 44a and 44b of the partition portion 44 and the inner peripheral surface 20c of the chamber 20 when viewed from the plane direction. It is a space surrounded by a fan shape. The horizontal range of the film forming positions M1 and M2 and the processing position M3 is a region separated by a pair of wall plates 44a and 44b. The film-forming material is deposited as a film on the electronic component 100 passing through the position facing the target 41 in the film-forming position M. This film formation position M is a region where most of the film formation is performed, but even in a region outside the film formation position M, there is leakage of the film formation material from the film formation position M, so that the film is completely deposited. It's not without. That is, the processing area where the film formation is performed is a slightly wider area than the film formation position M.

<Power supply unit>
The power supply unit 6 is a configuration unit that applies electric power to the target 41. By applying electric power to the target 41 by the power supply unit 6, the sputtering gas G1 can be turned into plasma and the film-forming material can be deposited on the electronic component 100. In the present embodiment, the power supply unit 6 is, for example, a DC power supply to which a high voltage is applied. In the case of an apparatus that performs high-frequency sputtering, an RF power source can also be used. The rotary table 31 has the same potential as the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 41 side. This avoids the difficulty of connecting to the power supply unit 6 in order to make the movable rotary table 31 have a negative potential.

The plurality of film forming processing units 40 form a film composed of layers of a plurality of film forming materials by selectively depositing the film forming materials. In particular, in the present embodiment, a film composed of layers of a plurality of types of film forming materials is formed by including a sputtering source 4 corresponding to different types of film forming materials and selectively depositing the film forming materials. The inclusion of the sputtering source 4 corresponding to different types of film forming materials means that even if the film forming materials of all the film forming processing units 40 are different, the plurality of film forming processing units 40 are common film forming materials. Including cases where others are different from this. To selectively deposit one type of film-forming material one by one means that while the film-forming processing unit 40 of any one type of film-forming material performs film-forming, the film-forming processing unit 40 of another film-forming material forms a film. It means not to do. Further, the film forming process unit 40 or the film forming position M during film forming means that the film forming process section 40 or the film forming position M is in a state where power is applied to the target 41 of the film forming process section 40 and the film can be formed on the electronic component 100. It refers to the film formation position M.

In the present embodiment, two film-forming processing units 40A and 40B are arranged with the surface treatment unit 50 interposed therebetween in the transport direction of the transport path L. The film formation positions M1 and M2 correspond to the two film formation processing units 40A and 40B. Of these film forming processing sections 40A and 40B, the film forming material of the film forming processing section 40A is SUS. That is, the sputtering source 4 of the film forming processing unit 40A includes targets 41A and 41B made of SUS. In the other film forming processing section 40B, the film forming material is Cu. That is, the sputtering source 4 of the film forming processing unit 40B includes targets 41A and 41B made of Cu. In the present embodiment, while any one of the film forming processing units 40 is performing the film forming processing, the other film forming processing unit 40 does not perform the film forming processing.

(Surface treatment part)
The surface treatment unit 50 is a processing unit that performs surface treatment on the electronic component 100 conveyed by the transfer device 30, that is, reverse sputtering, which is plasma processing that does not have the sputtering source 4. The surface treatment portion 50 is provided at the treatment position M3 partitioned by the partition portion 44. The surface treatment unit 50 has a treatment unit 5. A configuration example of the processing unit 5 will be described with reference to FIGS. 9 and 10.

The processing unit 5 includes a tubular electrode 51 provided from the upper part to the inside of the chamber 20. The tubular electrode 51 has a square tubular shape, has an opening 51a at one end, and is closed at the other end. The tubular electrode 51 is attached to the opening 21a provided on the top surface of the chamber 20 via an insulating member 52 so that one end having the opening 51a faces the rotary table 31. The side wall of the tubular electrode 51 extends inside the chamber 20.

A flange 51b projecting outward is provided at the end of the tubular electrode 51 opposite to the opening 51a. The insulating member 52 is fixed between the flange 51b and the peripheral edge of the opening 21a of the chamber 20 to keep the inside of the chamber 20 airtight. The insulating member 52 may be made of a material such as PTFE (polytetrafluoroethylene), for example, as long as it has an insulating property and is not limited to a specific material.

The opening 51a of the tubular electrode 51 is arranged at a position facing the transport path L of the rotary table 31. As the transport device 30, the rotary table 31 transports the tray 34 on which the electronic component 100 is mounted and passes the tray 34 facing the opening 51a. The opening 51a of the tubular electrode 51 is larger than the size of the tray 34 in the radial direction of the rotary table 31.

As shown in FIG. 9, the tubular electrode 51 has a fan shape that expands in diameter from the center side to the outside in the radial direction of the rotary table 31 when viewed from the plane direction. The fan shape here means the shape of the fan surface of the fan. The opening 51a of the tubular electrode 51 is also fan-shaped. The speed at which the tray 34 on the rotary table 31 passes through the position facing the opening 51a becomes slower toward the center side in the radial direction of the rotary table 31 and becomes faster toward the outside. Therefore, if the opening 51a is simply a rectangle or a square, there will be a difference in the time required for the electronic component 100 to pass the position facing the opening 51a between the center side and the outside in the radial direction. By increasing the diameter of the opening 51a from the central side to the outside in the radial direction, the time for passing through the opening 51a can be made constant, and the plasma treatment described later can be made uniform. However, a rectangle or a square may be used as long as the difference in passing time does not cause a problem in the product.

As described above, the tubular electrode 51 penetrates the opening 21a of the chamber 20 and a part thereof is exposed to the outside of the chamber 20. The portion of the tubular electrode 51 exposed to the outside of the chamber 20 is covered with the housing 53 as shown in FIG. The housing 53 keeps the space inside the chamber 20 airtight. The portion of the tubular electrode 51 located inside the chamber 20, that is, the periphery of the side wall is covered with the shield 54.

The shield 54 is a fan-shaped square tube coaxial with the tubular electrode 51, and is larger than the tubular electrode 51. The shield 54 is connected to the chamber 20. Specifically, the shield 54 is erected from the edge of the opening 21a of the chamber 20, and the end extending toward the inside of the chamber 20 is located at the same height as the opening 51a of the tubular electrode 51. Since the shield 54 acts as a cathode like the chamber 20, it is preferable to use a conductive metal member having low electrical resistance. The shield 54 may be integrally molded with the chamber 20, or may be attached to the chamber 20 by using a fixing bracket or the like.

The shield 54 is provided to stably generate plasma in the tubular electrode 51. Each side wall of the shield 54 is provided so as to extend substantially parallel to each side wall of the tubular electrode 51 through a predetermined gap. If the gap becomes too large, the capacitance becomes small and the plasma generated in the tubular electrode 51 enters the gap, so it is desirable that the gap is as small as possible. However, even if the gap becomes too small, the capacitance between the tubular electrode 51 and the shield 54 becomes large, which is not preferable. The size of the gap may be appropriately set according to the capacitance required for plasma generation. Although FIG. 10 shows only two side wall surfaces extending in the radial direction of the shield 54 and the tubular electrode 51, there is also a radius between the two side wall surfaces extending in the circumferential direction of the shield 54 and the tubular electrode 51. A gap of the same size as the side wall surface in the direction is provided.

Further, a process gas introduction unit 55 is connected to the tubular electrode 51. In addition to piping, the process gas introduction unit 55 includes a gas supply source for process gas G2 (not shown), a pump, a valve, and the like. The process gas introduction unit 55 introduces the process gas G2 into the tubular electrode 51. As described above, the process gas G2 can be appropriately changed depending on the purpose of the treatment.

An RF power supply 56 for applying a high frequency voltage is connected to the tubular electrode 51. A matching box 57, which is a matching circuit, is connected in series to the output side of the RF power supply 56. The RF power supply 56 is also connected to the chamber 20. When a voltage is applied from the RF power source 56, the tubular electrode 51 acts as an anode, and the chamber 20, the shield 54, the rotary table 31, the tray 34 and the transport plate 140 act as cathodes. That is, it functions as an electrode for reverse sputtering. Therefore, as described above, the rotary table 31, the tray 34, and the transport plate 140 have conductivity and are in contact with each other so as to be electrically connected.

The matching box 57 stabilizes the plasma discharge by matching the impedances on the input side and the output side. The chamber 20 and the rotary table 31 are grounded. The shield 54 connected to the chamber 20 is also grounded. Both the RF power supply 56 and the process gas introduction portion 55 are connected to the tubular electrode 51 via a through hole provided in the housing 53.

When argon gas, which is a process gas G2, is introduced into the tubular electrode 51 from the process gas introduction unit 55 and a high-frequency voltage is applied from the RF power source 56 to the tubular electrode 51, the argon gas is turned into plasma, and electrons, ions and radicals are generated. Etc. occur.

(Road lock part)
The load lock unit 60 carries the tray 34 on which the unprocessed electronic components 100 are mounted into the vacuum chamber 21 via the transport plate 140 by a transport means (not shown) while maintaining the vacuum of the vacuum chamber 21. This is a device for carrying out the tray 34 on which the processed electronic component 100 is mounted via the plate 140 to the outside of the vacuum chamber 21. Since a well-known structure can be applied to the load lock portion 60, the description thereof will be omitted.

[Plate detachment part]
After the film is formed on the electronic component 100, the transfer plate 140 taken out from the tray 34 is put into the plate detaching portion 400. Although not shown, the plate detaching portion 400 peels a part of the holding sheet 120 from the conveying plate 140 by inserting a pusher from a hole or groove provided in the conveying plate 140 to urge the holding sheet 120. Then, the holding sheet 120 is separated from the transport plate 140 by being lifted by the gripping member.

[Cooling unit]
The cooling unit 500 cools the heated transport plate 140 by forming a film on the electronic component 100 by the film forming unit 300. As shown in FIGS. 4 and 11, the cooling unit 500 includes a housing unit 510, a spray unit 520, a decompression unit 530, and a vent unit 540. The accommodating portion 510 is a container for accommodating the transport plate 140. The accommodating portion 510 is airtight, and the inside can be evacuated.

The accommodating portion 510 has an opening 511, a shutter 512, a support base 513, an exhaust port 514, and a spray port 515. The opening 511 has a size that allows the transport plate 140 to be taken in and out. The shutter 512 is provided in the opening 511 and opens and closes the opening 511. When the opening 511 is closed by the shutter 512, the inside of the accommodating portion 510 is sealed from the outside air, and when the opening 511 is opened by the shutter 512, the inside of the accommodating portion 510 is opened to the atmosphere.

The support base 513 is a base that supports the transport plate 140 housed in the housing unit 510. The support base 513 supports a part of the support surface 142 of the transport plate 140. That is, in the transport plate 140 supported by the support base 513, the mounting surface 141, a part of the support surface 142, and the side surface are exposed in the accommodating portion 510. The exhaust port 514 is an opening for decompressing the inside of the accommodating portion 510 by exhaust gas. The spray port 515 is an opening for spraying a liquid. The spray port 515 is also an opening for vacuum breaking in the accommodating portion 510 by introducing the atmosphere.

The spray unit 520 sprays the liquid into the accommodating unit 510. Water is used as the liquid. The spray unit 520 has a pipe 521 communicating with a water supply source (not shown). Further, the spray unit 520 has a spray nozzle (not shown) extending from the pipe 521 to the spray port 515. The decompression unit 530 decompresses the inside of the accommodating unit 510 so that the transport plate 140 is cooled by the heat of vaporization of the liquid sprayed by the spray unit 520. The decompression unit 530 includes a pipe 531 connected to the exhaust port 514, and is connected to a pneumatic circuit (not shown) connected to the pipe 531. Due to the exhaust by the decompression unit 530, the inside of the accommodating unit 510 is decompressed to create a vacuum.

The vent portion 540 opens the accommodating portion 510 to the atmosphere. The vent portion 540 includes a spray port 515 and a pipe 541 connected to the pipe 521, and has a valve (not shown) connected to the pipe 541. The vent portion 540 breaks the vacuum by opening the valve in a state where the inside of the accommodating portion 510 is evacuated.

[Transport section]
As shown in FIG. 3, the transport section 600 transports necessary members between the plate mounting section 200, the film forming section 300, the plate detaching section 400, and the cooling section 500. The transport unit 600 of the present embodiment has rotary arms 610 and 620 and a robot arm 630. The rotary arm 610 moves the tray 34 on which the transport plate 140 is mounted from the chamber 20 via the load lock portion 60. The rotary arm 620 moves the transport plate 140 on which the holding sheet 120 is mounted in and out of the tray 34. The robot arm 630 transports the transport plate 140 between the plate mounting portion 200, the rotary arm 620, the plate detaching portion 400, and the cooling portion 500.

[Control device]
The control device 700 is a device that controls each part of the film forming apparatus S. The control device 700 can be configured by, for example, a dedicated electronic circuit, a computer operating with a predetermined program, or the like. That is, the control device 70 is programmed with respect to the control of the plate mounting unit 200, the film forming unit 300, the plate detaching unit 400, the cooling unit 500, and the transport unit 600, and the PLC (Programmable Logic Controller) and the CPU. It is executed by a processing device such as (Central Processing Unit).

Specifically, the contents to be controlled include the transport of the transport plate 140 by the rotary arm 620, the loading and unloading of the tray 34 by the rotary arm 610 into the film forming section 300, and the holding sheet 120 to the transport plate 140 by the plate mounting section 200. Mounting, detachment of the holding sheet 120 from the transport plate 140 by the plate detachment part 400, loading and unloading of the transfer plate 140 to the cooling part 500 by the robot arm 630, opening and closing of the shutter 512, spraying of liquid by the spray part 520, decompression part 530 Includes operations such as exhaust by, vacuum break by the vent portion 540, and their timing.

Further, the control device 700 includes the initial exhaust pressure of the film forming apparatus S, the selection of the sputter source 4, the applied power to the target 41 and the tubular electrode 51, the flow rate, the type, the introduction time and the exhaust of the sputter gas G1 and the process gas G2. The time, film formation time, rotation speed of the motor 32, and the like are controlled.

The configuration of the control device 700 for executing the operation of each part as described above will be described with reference to FIG. 12, which is a virtual functional block diagram. That is, the control device 700 has a mechanism control unit 71, a storage unit 72, a setting unit 73, and an input / output control unit 74.

The mechanism control unit 71 is a processing unit that controls the mechanism of each unit constituting the plate mounting unit 200, the film forming unit 300, the plate detaching unit 400, the cooling unit 500, and the transport unit 600. Further, the mechanism control unit 71 includes an exhaust unit 23, a gas supply unit 25, a process gas introduction unit 55, a motor 32 of the transfer device 30, a drive source such as a load lock unit 60, a valve, a switch, a power supply, a power supply unit 6, and RF. Controls the power supply 56 and the like.

The storage unit 72 is a component unit that stores information necessary for controlling the present embodiment. For example, the amount and timing of spraying the liquid by the spray unit 520, the amount of exhaust gas and the exhaust timing by the decompression unit 530, the timing of vacuum break by the vent unit 540, and the like are included in the information stored in the storage unit 72. The setting unit 73 is a processing unit that sets the information input from the outside in the storage unit 72. The input / output control unit 74 is an interface for controlling signal conversion and input / output with each unit to be controlled.

Further, an input device 75 and an output device 76 are connected to the control device 700. The input device 75 is an input means such as a switch, a touch panel, a keyboard, and a mouse for the operator to operate the film forming apparatus S via the control device 700. For example, the selection of the sputtering source 4 for forming a film can be input by the input means. The output device 76 is an output means such as a display, a lamp, or a meter that makes information for confirming the state of the device visible to the operator.

[motion]
The operation of the present embodiment as described above will be described below with reference to FIGS. 1 to 12 above. First, as shown in FIGS. 2A and 2B, the electronic components 100 are previously attached to the attachment area 121c of the holding sheet 120 in a matrix at intervals, and the outer frame of the holding sheet 120 is attached. The frame 130 is in close contact with the region 121a.

(Plate mounting process: FIG. 3 [1], FIG. 4 [1])
Such a holding sheet 120 and a transport plate 140 are put into the plate mounting portion 200. Then, in the plate mounting portion 200, the mounting surface 141 of the transport plate 140 is brought into close contact with the support surface 122 of the holding sheet 120 on the transport plate 140.

(Plate mounting process: Fig. 3 [2], Fig. 4 [2])
As shown in FIGS. 6A, 6B, 7A, and 7B, the transport plate 140 to which the holding sheet 120 is closely attached is mounted on the facing surface 34a of the tray 34 by the rotating arm 620. .. At this time, the tip of the projecting member 35a fits into the regulation portion 143, and the transport plate 140 is supported by the support portion 35.

(Film formation process: FIG. 3 [3], FIG. 4 [3])
The plurality of trays 34 are sequentially carried into the chamber 20 from the load lock portion 60 by the rotary arm 610. The rotary table 31 sequentially moves the empty holding portion 33 to the loading location from the load lock portion 60. The holding unit 33 individually holds the trays 34 carried in by the conveying means. In this way, as shown in FIGS. 8 and 9, the trays 34 on which the electronic components 100 to be film-formed are mounted via the holding sheet 120 and the transport plate 140 are all placed on the rotary table 31. To. In FIGS. 8 to 9, the electronic component 100, the holding sheet 120, and the transport plate 140 mounted on the tray 34 are not shown.

The film forming process for the electronic component 100 introduced into the film forming apparatus S will be described as described above. In the following operation, the surface of the electronic component 100 is cleaned and roughened by the surface treatment unit 50, and then the film forming processing units 40A and 40B form the electromagnetic wave shield film 113 on the surface of the electronic component 100. This is an example. The electromagnetic wave shielding film 113 is formed by alternately laminating SUS layers and Cu layers. The SUS layer directly formed on the electronic component 100 serves as a base for increasing the degree of adhesion between the mold resin and Cu. The Cu layer in the middle is a layer having a function of shielding electromagnetic waves. The uppermost SUS layer is a protective layer that prevents Cu from rusting.

First, the vacuum chamber 21 is constantly exhausted and depressurized by the exhaust unit 23. When the vacuum chamber 21 reaches a predetermined pressure, the rotary table 31 rotates to reach a predetermined rotation speed. The electronic component 100 passes through the processing unit 5 at a position facing the opening 51a of the tubular electrode 51. In the processing unit 5, argon gas, which is the process gas G2, is introduced from the process gas introduction unit 55 into the tubular electrode 51, and a high frequency voltage is applied from the RF power source 56 to the tubular electrode 51. Argon gas is turned into plasma by applying a high frequency voltage, and active species containing ions and the like are generated. The plasma flows from the opening 51a of the tubular electrode 51, which is the anode, to the transport plate 140, the tray 34, and the rotary table 31, which are the cathodes. When ions or the like in the plasma collide with the surface of the electronic component 100 passing under the opening 51a, the surface is cleaned and roughened. Then, when the surface treatment time by the surface treatment unit 50 has elapsed, the surface treatment unit 50 is stopped. That is, the supply of the process gas G2 from the process gas introduction unit 55 and the application of the voltage by the RF power supply 56 are stopped.

Next, the gas supply unit 25 of the film forming processing unit 40A supplies the sputtering gas G1 to the periphery of the target 41. Under this state, the electronic component 100 held by the holding unit 33 moves on the transport path L in a circular locus and passes through a position facing the sputtering source 4.

Next, the power supply unit 6 applies electric power to the target 41 only in the film forming processing unit 40A. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 100 that passes through the film-forming position M1 of the film-forming processing unit 40A, and a film is formed. Here, a layer of SUS is formed. At this time, the heat of the electronic component 100 heated by the plasma is released to the transport plate 140 via the holding sheet 120.

Further, the electronic component 100 passes through the film forming position M2 of the film forming processing section 40B, but since the film forming processing section 40B does not apply electric power to the target 41, the film forming process is not performed and the electronic component 100 is heated. Not done. Further, the electronic component 100 is not heated even in the regions other than the film forming positions M1 and M2. In this way, the electronic component 100 and the transport plate 140 release heat in the unheated region.

After the film forming time by the film forming processing section 40A has elapsed, the film forming processing section 40A is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film forming processing unit 40B applies electric power to the target 41. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 100 that passes through the film-forming position M2 of the film-forming processing unit 40B, and a film is formed. Here, a layer of Cu is formed. This layer becomes a part of the layer of the electromagnetic wave shielding film 113. At this time, the heat of the electronic component 100 heated by the plasma is released to the transport plate 140 via the holding sheet 120.

Further, the electronic component 100 passes through the film forming position M1 of the film forming processing section 40A, but since the film forming processing section 40A does not apply electric power to the target 41, the film forming process is not performed and the electronic component 100 is heated. Not done. Further, the electronic component 100 is not heated even in the regions other than the film forming positions M1 and M2. In this way, in the unheated region, the electronic component 100 and the transport plate 140 release heat.

After the film forming time by the film forming processing section 40B has elapsed, the film forming processing section 40B is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. Then, the power supply unit 6 of the film forming processing unit 40A applies electric power to the target 41. As a result, the sputter gas G1 is turned into plasma. In the sputtering source 4, the ions generated by the plasma collide with the target 41 and fly the particles of the film-forming material. Therefore, particles of the film-forming material are deposited on the surface of the electronic component 100 that passes through the film-forming position M1 of the film-forming processing unit 40A, and a film is formed. Here, a layer of SUS is formed. At this time, the heat of the electronic component 100 heated by the plasma is released to the transport plate 140 via the holding sheet 120.

Further, the electronic component 100 passes through the film forming position M2 of the film forming processing section 40B, but since the film forming processing section 40B does not apply electric power to the target 41, the film forming process is not performed and the electronic component 100 is heated. Not done. Further, the electronic component 100 is not heated even in the regions other than the film forming positions M1 and M2. In this way, in the unheated region, the electronic component 100 and the transport plate 140 release heat.

After the film forming time by the film forming processing section 40A has elapsed, the film forming processing section 40A is stopped. That is, the application of electric power to the target 41 by the power supply unit 6 is stopped. By repeating the film formation by the film formation processing units 40A and 40B in this way, a film in which a SUS film, a Cu film, and a SUS film are laminated is formed. Further, by repeating the same film formation, it is possible to form more than three layers. As a result, as shown in FIGS. 1A and 1B, the electromagnetic wave shielding film 113 is formed on the top surface 111b and the side surface 111c of the electronic component 100.

During the film forming process as described above, the rotary table 31 continues to rotate and continues to circulate and convey the tray 34 on which the electronic component 100 is mounted. Then, after the film forming process is completed, the tray 34 on which the electronic component 100 is mounted is sequentially positioned on the load lock portion 60 by the rotation of the rotary table 31, and is carried out by the rotary arm 610.

(Plate removal process: Fig. 3 [4], Fig. 4 [4])
The transport plate 140 is taken out by the rotary arm 620 from the tray 34 carried out from the film forming section 300. Then, the transfer plate 140 is thrown into the plate detaching portion 400 by the robot arm 630.

(Plate detachment step: FIG. 3 [5], FIG. 4 [5])
At the plate detaching portion 400, the holding sheet 120 is detached from the conveying plate 140. Further, in a component release device (not shown), for example, the electronic component 100 is detached from the holding sheet 120 by peeling off the holding sheet 120 while sucking the electronic component 100 with a negative pressure.

(Plate cooling process: Fig. 3 [6], Fig. 4 [6])
The transport plate 140 is carried into the cooling unit 500 by the robot arm 630. That is, as shown in FIG. 11A, the transport plate 140 is inserted into the accommodating portion 510 from the opening 511 opened by opening the shutter 512, and is placed on the support base 513. As shown in FIG. 11B, the liquid is sprayed from the spray port 515 by the spray unit 520 in a state where the shutter 512 is closed and the inside of the accommodating unit 510 is sealed.

As shown in FIG. 11C, the inside of the accommodating portion 510 is depressurized to a vacuum state by exhausting air from the exhaust port by the decompression unit 530. At this time, since the sprayed liquid evaporates, the transfer plate 140 is cooled by the heat of vaporization. The transport plate 140 is heated in the film forming process to raise the temperature to about 60 ° C. to 70 ° C., and may be lowered to, for example, about room temperature (25 ° C.) by cooling, but the temperature is not limited to this. Then, as shown in FIG. 11 (D), the vacuum is broken by opening the valve of the vent portion 540. After that, the shutter 512 is opened, and the transfer plate 140 is carried out from the accommodating portion 510 by the robot arm 630 and put into the plate mounting portion 200.

In FIGS. 11A to 11E, the peripheral edge of the transport plate 140 is held by the support base 513, but the present invention is not limited to this, and the entire support surface 142 of the transport plate 140 is held on the plate-shaped support base 513. May be held in surface contact. Since the cooling plate 516 and the transport plate 140 are in surface contact with each other, the contact area is increased, the heat of the transport plate 140 is efficiently dissipated to the cooling plate 516, and the cooling effect is improved. If the plate-shaped support 513 is made of a metal such as aluminum or SUS, ceramics, resin, or other material having high thermal conductivity, the cooling effect is further improved.

[Comparative test]
FIG. 13 shows the results of comparative tests between Examples and Comparative Examples corresponding to the above embodiments. 13 (a) to 13 (d) are the results of measuring the temperature of the transport plate with the passage of time in a vacuum chamber outside the film forming portion, with 90 ° C. as the initial temperature. In this measurement, an aluminum alloy was used as the transport plate, and a plate-shaped member having a size of 100 mm × 200 mm × 20 mm was used. A platinum thermocouple thermometer was used as the temperature detection unit, and the measurement point was centered on the upper surface of the transport plate.

13 (a) and 13 (b) are the measurement results of the cooling time when the transport plate is left in the vacuum chamber. FIG. 13A shows a case where the vacuum chamber is held by another member in the vacuum chamber only by point contact and left in a substantially insulated state. FIG. 13B shows a case where the aluminum block provided in the vacuum chamber is placed directly on the surface of the aluminum block, that is, left in a state of being held by surface contact.

13 (c) and 13 (d) are measurement results of the cooling time when the liquid is sprayed on the transport plate in the vacuum chamber and vaporized to perform vaporization cooling. FIG. 13 (c) shows a case where vaporization cooling is performed in a state where the vacuum chamber is held by other members in the vacuum chamber only by point contact and is substantially insulated. This corresponds to the aspect shown in FIG. FIG. 13D shows a case where vaporization cooling is performed while the aluminum block provided in the vacuum chamber is held in surface contact. The liquid to be sprayed was pure water, the spray amount per spray was 3.7 g, and the spray interval was 2 times / min.

As shown in FIG. 13, when the cooling target temperature was set to room temperature (25 ° C.), the target temperature was reached in about 9 minutes in (d) and about 16 minutes in (c). On the other hand, in (a) and (b), even after 30 minutes had passed, the temperature was 70 ° C. in (a) and 30 ° C. in (b), and the target temperature was not reached. In addition, (a) and (b) did not reach the target temperature even after 60 minutes passed, and the temperature dropped only to 46.6 ° C. in (a) and 26.7 ° C. in (b).

[Action effect]
(1) The film forming apparatus S of the present embodiment has a chamber 20 into which the sputtering gas G1 is introduced and a sputtering source 4 provided in the chamber 20 for depositing a film forming material by sputtering and forming a film. A film forming processing unit 40 that forms a film on the electronic component 100 in the chamber 20 by the sputtering source 4, a transfer plate 140 on which the electronic component 100 formed in the chamber 20 is mounted, and a transfer plate 140 via the tray 34. It has a transport device 30 for transporting, a tray 34 transported by the transport device 30, and a support portion 35 provided on the tray 34 for supporting the transport plate 140 so as to form a gap between the tray 34 and the tray 34. ..

In the present embodiment, the electronic component 100 to be formed is mounted on the transport plate 140. As a result, the heat of the electronic component 100 during film formation can be released to the transport plate 140 to suppress the temperature rise of the electronic component. However, an internal member such as the rotary table 31 in the chamber 20 of the film forming unit 300 is also heated by the plasma. Then, when the heat from such an internal member is transferred to the transport plate 140 via the tray 34, the temperature of the electronic component 100 rises. In particular, when the film forming portion 300 continuously forms a film, the heat generated by the plasma in the previous film forming may remain in the internal member. Then, the heat remaining from the internal member is transferred to the electronic component 100 on which the next film formation is performed, so that the temperature condition for the film formation of the electronic component 100 fluctuates, which may cause the film quality to fluctuate. In the present embodiment, the transport plate 140 and the tray 34 installed in the film forming portion 300 are supported by the support portion 35 so as to form a gap. Therefore, heat insulation between the transport plate 140 and the tray 34 can be achieved, and heat from an internal member such as the rotary table 31 of the transport unit 600 is difficult to be transmitted to the electronic component 100 via the tray 34 and the transport plate 140. Therefore, the temperature rise of the electronic component 100 is suppressed.

(2) The contact area of the support portion 35 is 5% or less with respect to the area of the support surface 142 of the transport plate 140 supported by the support portion 35. Therefore, the heat transfer path from the tray 34 to the transport plate 140 is narrowed, and it becomes difficult for heat to be transferred to the electronic component 100.

(3) The support portion 35 has a protruding member that protrudes from the tray 34 toward the transport plate 140 and whose tip is in contact with the transport plate 140. Therefore, with a simple configuration, the transport plate 140 can be supported at a distance from the tray 34.

(4) A plurality of support portions 35 are provided. Therefore, a plurality of support positions can be set, and the transport plate 140 can be stably supported while keeping a space between the trays and the trays 34.

(5) The transport plate 140 has a regulating portion 143 that regulates the movement of the transport plate 140 supported by the support portion 35 with respect to the support portion. Therefore, the regulation unit 143 can prevent the transfer plate 140 from being displaced due to the transfer.

(6) In the chamber 20, the transport plate 140 and the film formed on the electronic component 100 are provided with a surface treatment portion 50 that acts as an electrode to perform surface treatment on the transfer plate 140 and the support. The part 35 has conductivity. Therefore, the transport plate 140 and the support portion 35 can have a function as an electrode of the surface treatment portion 50.

(7) The film forming apparatus S of the present embodiment has a chamber 20 into which the sputtering gas G1 is introduced, and a film is formed on the electronic component 100 mounted on the transport plate 140 by the sputtering source 4 in the chamber 20. It has a film forming processing unit 40 and a cooling unit 500 for cooling the transport plate 140 outside the chamber 20. Then, in the cooling unit 500, the transport plate 140 is cooled by the accommodating portion 510 accommodating the transport plate 140, the spray unit 520 that sprays the liquid into the accommodating unit 510, and the heat of vaporization of the liquid sprayed by the spray unit 520. As such, it has a decompression unit 530 that depressurizes the inside of the accommodating unit 510.

By cooling the transport plate 140 in the cooling unit 500 and then using it for film formation again in this way, the influence of the heat of the previous process remaining in the film forming section 300 in the processing of a plurality of electronic components. The processing can be performed without fluctuations in temperature conditions. Since the heat of vaporization of the liquid is used for cooling, the film can be cooled at a higher speed than when it is simply left outside the film forming section 300, and the film can be efficiently formed with a small number of transport plates 140.

(8) The transport plate 140 has an uneven or porous portion on the surface. Therefore, since a larger amount of liquid can be contained in the surface, the amount of liquid vaporized is large and the cooling efficiency is increased.

(9) The electronic component 100 is held by a holding sheet 120 having an adhesive surface having an adhesive surface on one surface, and on the other surface of the holding sheet 120, at least the entire region corresponding to the sticking region 121c of the electronic component 100. The transport plate 140 is in close contact with the transport plate 140. Therefore, the heat of the electronic component 100 is efficiently transferred to the transport plate 140.

[Other Embodiments]
The present invention is not limited to the above embodiment, but also includes the following aspects.
(1) The shape of the protruding member 35a of the support portion 35 is not limited to the above aspect. It may be cylindrical, pyramidal, or pyramidal. The number of the support portions 35 may be one, but is preferably a plurality for the stability of the support. For example, it may be three or five or more. Further, as shown in FIG. 14A, by giving elasticity to the support portion 35, even if the support surface 142 of the transport plate 140 is distorted, the support portion 35 is surely brought into contact with the support portion 35 and is stable. It may be possible to ensure support and conductivity. For example, the projecting member 35a may be supported by an elastic member 35b such as a spring so as to move forward and backward toward the transport plate 140.

Further, as shown in FIG. 14B, the protruding member 35a of the support portion 35 may have a wall shape or a bank shape extending along the facing surface. As a result, it is possible to reduce the electrical resistance by increasing the contact area between the projecting member 35a and the transport plate 140, and to secure the stability of the support.

Further, by making the support portion 35 a flexible material, even if the support surface 142 of the transport plate 140 is distorted, the support portion 35 is surely brought into contact with each other to ensure stable support and conductivity. May be possible. For example, as shown in FIG. 14C, a metal brush such as copper may be applied to the support portion 35. Further, a metal mesh-like member may be applied. Further, the support portion 35 may be combined with a support member for mechanical support and a support member for electrical conduction. For example, the above modes of support members may be combined. For electrical connection, the transport plate 140 and the support portion 35 need only be in contact with each other at at least one place. Further, the support position of the transport plate 140 by the support portion 35 is not limited to the support surface 142 on the side opposite to the surface on which the electronic component 100 is placed. For example, a part of the side surface of the transport plate 140 or both the side surface and the support surface 142 may be supported.

(2) The number of targets in the film forming processing unit 40 is not limited to two. The number of targets may be one or three or more. Further, the film formation position may be 2 or less, or 4 or more. Further, as shown in FIG. 15, for example, even if the film forming section 300 has the film forming processing sections 40A to 40C but does not have the surface treating section 50 using the transport plate 140 and the tray 34 as a part of the electrodes. Good. In this case, it is not necessary for the support portion 35 to have conductivity in order to secure the conductivity between the transport plate 140 and the tray 34. That is, the materials of the transport plate 140, the tray 34, and the support portion 35 do not have to have conductivity. For example, at least one of the transport plate 140, the tray 34, and the support portion 35 may be a ceramic or synthetic resin having good thermal conductivity, or a composite material thereof.

(3) In the above embodiment, the cooling unit 500 may reduce the temperature of the transport plate 140 by spraying and exhausting the liquid a plurality of times. In this case, the storage unit 72 of the control device 700 may be set in advance a number of times to reach a desired temperature by an experiment or the like, and the liquid spraying and exhausting may be executed a set number of times. Further, a temperature detection unit for measuring the temperature of the transport plate 140 may be provided, and the control device 700 may spray and exhaust the liquid until the temperature detected by the temperature detection unit reaches a preset temperature. As a result, the residual liquid can be formed into a film by repeating the process while adjusting the amount of liquid sprayed each time and the amount of liquid adhering to the transport plate 140 so as not to become excessive. It can be prevented from affecting. Further, as shown in FIG. 16, a plurality of transport plates 140 may be accommodated in the accommodating portion 510 of the cooling unit 500. For example, the support base may be provided in multiple stages in the accommodating portion 510. As a result, a plurality of transport plates can be cooled together, so that work efficiency can be improved. The temperature detection unit 513a is provided on the surface of the support base 513 that supports the transport plate 140, for example, as shown in FIG. As a result, when the transport plate 140 is placed on the support base 513, it can be brought into contact with the temperature detection unit 513a to detect the temperature. As the temperature detection unit, a known temperature sensor such as a thermocouple, a resistance temperature detector, a thermistor, or a radiation thermometer can be used, and the position thereof is not limited to the above-described embodiment.

(4) Further, as shown in FIG. 17, the cooling plate 516 having the contact surface 516a in contact with the transport plate 140 is provided, and the liquid is sprayed by the spray unit 520 on the side of the cooling plate 516 opposite to the contact surface 516a. , The decompression unit 530 may be used to reduce the pressure. In this case, the cooling plate 516 airtightly divides the inside of the accommodating portion 510 into the contact surface 516a side on which the transport plate 140 contacts and the cooling chamber 517 on the opposite side, and makes the cooling chamber 517 a space capable of depressurizing. The cooling plate 516 is formed of a metal such as aluminum or SUS, ceramics, resin, or other material having high thermal conductivity. The surface of the cooling plate 516 on the side opposite to the contact surface 516a, that is, the surface on the cooling chamber 517 side is uneven or porous. The unevenness can be formed by, for example, roughening the surface. Further, it may have a relatively large unevenness that serves as a heat radiation fin. Porousness can be formed, for example, by applying anodizing treatment when the transport plate 140 is made of aluminum.

Further, the exhaust port 514 and the spray port 515 are provided so as to communicate with the cooling chamber 517, the decompression unit 530 is connected to the exhaust port 514, and the spray unit 520 and the vent unit 540 are connected to the spray port 515, respectively. There is.

In this aspect, as shown in FIG. 17A, the transport plate 140 is inserted into the accommodating portion 510 through the opening 511 opened by opening the shutter 512 and placed on the contact surface 516a of the cooling plate 516. To. As shown in FIG. 17B, the shutter 512 is closed, and the liquid is sprayed from the spray port 515 into the cooling chamber 517 by the spray unit 520.

As shown in FIG. 17C, the inside of the cooling chamber 517 is depressurized by exhausting air from the exhaust port by the decompression unit 530. At this time, the sprayed liquid evaporates, so that the cooling plate 516 is cooled. As a result, the transport plate 140 in contact with the cooling plate 516 is cooled. Then, as shown in FIG. 17 (D), the vacuum is broken by opening the valve of the vent portion 540. After that, the shutter 512 is opened, and the transfer plate 140 is carried out from the accommodating portion 510 by the robot arm 630 and put into the plate mounting portion 200.

In the above aspect, since the liquid does not directly adhere to the transport plate 140, it is possible to prevent the liquid remaining on the transport plate 140 from affecting the film formation. Further, since the cooling plate 516 and the transport plate 140 are in surface contact with each other, the contact area is increased. Therefore, as shown in FIG. 13D described above, the heat of the transport plate 140 is efficiently released to the cooling plate 516, and the cooling effect is improved. Even in such an embodiment, the cooling unit 500 may reduce the temperature of the transport plate by spraying and exhausting the liquid a plurality of times. In this case, the storage unit 72 of the control device 700 may be set in advance the number of times the temperature reaches a desired temperature by an experiment or the like, and the spraying and exhausting of the liquid may be executed a set number of times. Further, a temperature detection unit for detecting the temperature of the transport plate 140 may be provided, and the control device 700 may repeatedly spray and exhaust the liquid until the temperature detected by the temperature detection unit reaches a preset temperature. ..

(5) The shapes of the transport plate 140 and the tray 34 are not limited to rectangles. It can have various shapes such as a circular shape and an elliptical shape. An adhesive sheet may be interposed between the holding sheet 120 and the transport plate 140. The mode of mounting the electronic component 100 on the transport plate 140 is not limited to the above mode. The frame 130 may be omitted, and the electronic component 100 may be mounted on the transport plate 140 only by the holding sheet 120. Further, the electronic component 100 may be directly held by the transport plate 140. The number of transport plates 140 mounted on the tray 34 and the number of electronic components 100 mounted on the transport plate 140 may be one or a plurality.

(6) The mode of the cooling unit 500 is not limited to the mode in which the heat of vaporization is utilized. Cooling may be performed by bringing the transport plate 140 into contact with a cooling plate cooled by another principle. For example, the cooling plate may be cooled by circulation of cooling water such as water, cooled by a Peltier element, or cooled by wind from a fan. Further, it may be left outside the film forming section 300 without providing the cooling section 500.

(7) As the film forming material, various materials capable of forming a film by sputtering can be applied. For example, as the electromagnetic wave shielding film, Al, Ag, Ti, Nb, Pd, Pt, Zr and the like can also be used. Further, Ni, Fe, Cr, Co and the like can be used as the magnetic material. Furthermore, SUS, Ni, Ti, V, Ta or the like can be used as the underlying adhesion layer, or SUS, Au or the like can be used as the outermost protective layer.

(8) As the form of the package of the electronic component 100, any form available now or in the future such as BGA, LGA, SOP, QFP, WLP can be applied. As terminals for the electronic component 100 to electrically connect to the outside, for example, hemispherical ones such as BGA provided on the bottom surface, flat ones such as LGA, and thin plate-shaped ones of SOP and QFP provided on the side surfaces. However, any terminal that can be used now or in the future can be applied, and its formation position does not matter. Further, the number of elements sealed inside the electronic component 100 may be singular or plural.

(9) The number of trays and electronic components simultaneously conveyed by the conveying unit and the number of holding portions for holding the trays may be at least one, and the number is not limited to the number illustrated in the above embodiment. That is, one electronic component may circulate and repeat the film formation, or two or more electronic components may circulate and repeat the film formation.

(10) Cleaning and surface treatment by etching or ashing may be performed in a chamber different from the chamber having the film formation position. When the oxidation treatment or the post-oxidation treatment is performed, oxygen can be used as the process gas G2. When nitriding is performed, nitrogen can be used as the process gas G2.

(11) In the above embodiment, the rotary table 31 is an example of rotating in a horizontal plane. However, the direction of the rotating surface of the transport unit is not limited to a specific direction. For example, it may be a rotating surface that rotates in a vertical surface. Further, the transport means included in the transport unit is not limited to the rotary table. For example, a cylindrical member having a holding portion for holding a work may be a rotating body that rotates about an axis. Further, the trajectory of circulation transportation is not limited to the circumference. It includes a wide range of modes in which circulation is carried out by an endless transport path. For example, it may be rectangular or elliptical, and may include a crank or a meandering path. The transport path may be configured by, for example, a conveyor or the like.

Further, the present invention is supported by a chamber 20 into which the sputtering gas G1 is introduced, a film forming processing unit 40 provided in the chamber 20 and forming a film on the electronic component 100 by the sputtering source 4, and a tray 34, and is supported by the electronic component. Any film forming apparatus S may be used, which has a transport plate 140 for mounting the 100. Therefore, the film forming apparatus S may be used to form a film in a stationary state without circulating the electronic component 100. That is, it may be an apparatus in which the tray 34 on which the electronic component 100 is mounted is carried in via the transport plate 140, installed in the processing area, and sputtering is performed without changing the relative position with respect to the target 41.

(12) In the above embodiment, the film-forming materials are selectively deposited one by one to form a film. However, the present invention is not limited to this, and it is sufficient that a film composed of a plurality of layers of the film-forming material can be formed by selectively depositing the film-forming material. Therefore, two or more kinds of film forming materials may be deposited at the same time. For example, the electromagnetic wave shield film may be formed of an alloy of Co, Zr, and Nb. In such a case, among a plurality of film forming processing sections, a film forming processing section using Co as a film forming material, a film forming processing section using Zr as a film forming material, and a film forming process using Nb as a film forming material. The portions may be selected at the same time to form a film.

In this case, of the circumferential trajectories, the locus passing through the portion other than the film forming position during film formation is longer than the locus passing through the film forming position during film formation. It is preferable to select the film-forming processing section to be used for the film, or to set the arrangement of the dividing sections that divide the film-forming processing section.

That is, in either case of selecting a plurality of one-type or a plurality of types of film-forming processing sections to perform film formation, or selecting a single film-forming processing section to perform film formation, the circumference Of the trajectories of, the film-forming processing section used for film formation is provided so that the locus passing through the portion other than the film-forming position during film formation is longer than the trajectory passing through the film-forming position during film formation. It is preferable to select or set the arrangement of the dividing portion that separates the film forming processing portion.

(13) Although the embodiments of the present invention and modified examples of each part have been described above, the embodiments and modified examples of each part are presented as examples and are not intended to limit the scope of the invention. .. These novel embodiments described above can be implemented in various other embodiments, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are also included in the invention described in the claims.

4 Spatter source 5 Processing unit 6 Power supply unit 20 Chamber 20a Ceiling 20b Inner bottom surface 20c Inner peripheral surface 21 Vacuum chamber 21a Opening 22 Exhaust port 23 Exhaust part 24 Introducing port 25 Gas supply part 30 Conveyor device 31 Rotating table 32 Motor 33 Holding part 34 Tray 34a Facing surface 34b Peripheral part 35 Supporting part 35a Protruding member 35b Elastic member 40, 40A, 40B, 40C Film formation processing part 41, 41A, 41B Target 42 Backing plate 43 Electrode 44 Separation part 44a, 44b Wall plate 50 Surface processing part 51 Cylindrical electrode 51a Opening 51b Flange 52 Insulation member 53 Housing 54 Shield 55 Process gas introduction part 56 RF power supply 57 Matching box 60 Load lock part 610, 620 Rotating arm 630 Robot arm 70 Control device 71 Mechanism control part 72 Storage part 73 Setting unit 74 Input / output control unit 75 Input device 76 Output device 100 Electronic component 111a Electrode exposed surface 111b Top surface 111c Side surface 112 Electrode 113 Electromagnetic shield film 120 Holding sheet 121 Component mounting surface 121a Outer frame area 121b Middle frame area 121c Pasting area 122 Support surface 130 Frame 131 Through hole 140 Conveyance plate 141 Mounting surface 142 Support surface 143 Control part 143s Reference hole 200 Plate mounting part 300 Film formation part 400 Plate detachment part 500 Cooling part 510 Storage part 511 Opening 512 Shutter 513 Support base 513a Temperature detection Part 514 Exhaust port 515 Spray port 516 Cooling plate 516a Contact surface 517 Cooling chamber 520 Spraying part 521 Piping 530 Decompression part 531 Piping 540 Vent part 541 Piping 600 Conveying part 700 Control device

Claims (7)

The chamber in which the sputter gas is introduced and
A film forming processing unit provided in the chamber, which has a sputtering source for depositing a film forming material by sputtering to form a film, and a film forming processing unit for forming a film on an electronic component in the chamber by the sputtering source.
A transport plate on which the electronic component formed in the chamber is mounted and
A transport device that transports the transport plate via a tray and
A support portion provided on the tray and supporting the transport plate so as to form a gap between the tray and the tray.
A film forming apparatus characterized by having. The film forming apparatus according to claim 1, wherein the contact area of the support portion is 5% or less with respect to the area of the support surface of the transport plate supported by the support portion. The film forming apparatus according to claim 1 or 2, wherein the support portion protrudes from the tray toward the transport plate and has a protruding member whose tip is in contact with the transport plate. The film forming apparatus according to any one of claims 1 to 3, wherein a plurality of the support portions are provided. The film forming apparatus according to any one of claims 1 to 4, wherein the transport plate has a regulating portion that regulates the movement of the transport plate supported by the support portion with respect to the support portion. It has a surface treatment unit that performs surface treatment on the electronic component or a film formed on the electronic component in the chamber by acting the transport plate as an electrode.
The film forming apparatus according to any one of claims 1 to 5, wherein the transport plate and the support portion have conductivity. The electronic component is held by a holding sheet having an adhesive surface having an adhesive surface on one surface.
The invention according to any one of claims 1 to 6, wherein the transport plate is in close contact with the other surface of the holding sheet, at least over the entire region corresponding to the sticking region of the electronic component. Film deposition equipment.

Images