TWI719762B - Film forming device - Google Patents

Film forming device Download PDF

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TWI719762B
TWI719762B TW108146075A TW108146075A TWI719762B TW I719762 B TWI719762 B TW I719762B TW 108146075 A TW108146075 A TW 108146075A TW 108146075 A TW108146075 A TW 108146075A TW I719762 B TWI719762 B TW I719762B
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workpiece
cooling
chamber
film forming
rotating body
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TW108146075A
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Chinese (zh)
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TW202024374A (en
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瀧澤洋次
竹内八弥
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日商芝浦機械電子裝置股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/021Cleaning or etching treatments
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

Abstract

本發明提供一種工件的冷卻效率優異的成膜裝置。所述成膜裝置具有:搬入搬出部(100),使工件(W)在腔室(2)的內部出入;旋轉體(3),配置在腔室(2)的內部,通過旋轉來搬送搭載有工件(W)的基座(S);多個處理部(PR),沿著將旋轉體(3)的旋轉軸作為中心的圓周來配置,具有與腔室(2)內連通的開口(ОP),對已被從開口(ОP)導入的工件(W)進行處理;以及推動器(500),朝工件(W)從旋轉體(3)脫離,並被從開口(ОP)導入處理部(PR)內的方向對基座(S)施力;多個處理部(PR)包含對工件(W)進行加熱的加熱部(200)、對工件(W)進行成膜的成膜部(300)、及對工件(W)進行冷卻的冷卻部(400),在旋轉體(3)設置有保持部(33),所述保持部(33)保持旋轉體(3)正在搬送的基座(S),並通過由推動器(500)施力而放開基座(S),在推動器(500)設置有密封部(520),所述密封部(520)將工件(W)導入處理部(PR),並且將開口(ОP)密封。The present invention provides a film forming device with excellent cooling efficiency of a workpiece. The film forming apparatus has: a carry-in and carry-out part (100) that allows the workpiece (W) to go in and out of the chamber (2); a rotating body (3), which is arranged inside the chamber (2), and is transported and mounted by rotating There is a base (S) for the workpiece (W); a plurality of processing parts (PR) are arranged along the circumference with the rotation axis of the rotating body (3) as the center, and have an opening ( ОP) to process the workpiece (W) that has been introduced from the opening (ОP); and the pusher (500) to disengage from the rotating body (3) toward the workpiece (W) and be introduced into the processing section from the opening (ОP) The direction in (PR) applies force to the susceptor (S); the plurality of processing sections (PR) include a heating section (200) for heating the workpiece (W), and a film forming section ( 300), and a cooling part (400) for cooling the workpiece (W). The rotating body (3) is provided with a holding part (33), and the holding part (33) holds the base on which the rotating body (3) is being transported. (S), and the base (S) is released by applying force by the pusher (500). The pusher (500) is provided with a sealing part (520), and the sealing part (520) introduces the workpiece (W) Treat the part (PR) and seal the opening (ОP).

Description

成膜裝置Film forming device

本發明是有關於一種成膜裝置。The present invention relates to a film forming device.

作為在基板等工件的表面進行成膜的裝置,廣泛地使用利用濺鍍的成膜裝置。濺鍍是如下的技術:利用通過使已導入腔室內的氣體電漿化而產生的離子衝撞作為成膜材料的靶的平面,藉此成膜材料飛散而附著在工件。As an apparatus for forming a film on the surface of a workpiece such as a substrate, a film forming apparatus by sputtering is widely used. Sputtering is a technique in which ions generated by plasmaizing gas introduced into a chamber collide with the plane of a target as a film-forming material, whereby the film-forming material scatters and adheres to the workpiece.

有時在工件的表面進行成膜之前,事先進行排除工件中所含有的水分或大氣的脫氣處理。這在例如將容易含有大氣或水分的陶瓷基板用作工件的情況,另外,在將如銅、鈦、鎢等的金屬膜那樣容易氧化的材料用作工件的情況下,對於抗氧化有效。In some cases, a degassing treatment to remove moisture or air contained in the workpiece is carried out before film formation on the surface of the workpiece. This is effective for oxidation resistance when, for example, a ceramic substrate that easily contains air or moisture is used as a workpiece, and when a material that is easily oxidized, such as a metal film of copper, titanium, and tungsten, is used as a workpiece.

脫氣處理通過使工件的溫度升溫至300度左右為止來進行。但是,脫氣處理後,例如若在利用多個成膜材料使包含多個層的多層膜成膜的期間內,溫度條件變化,則引起多層膜的內部應力的變動。因此,各層的成膜必須盡可能以相同的溫度條件來進行,且脫氣處理後,使溫度條件不變。The degassing treatment is performed by raising the temperature of the workpiece to approximately 300 degrees. However, after the degassing treatment, if, for example, the temperature condition changes during the formation of a multilayer film including a plurality of layers using a plurality of film forming materials, the internal stress of the multilayer film will fluctuate. Therefore, the film formation of each layer must be performed under the same temperature conditions as much as possible, and the temperature conditions should be kept unchanged after the degassing treatment.

工件經由承接板而載置在基座(susceptor)上來搬送,所述基座載置在進行間歇旋轉的旋轉臺上。即,在進行間歇旋轉的旋轉台的停止位置,配置有進行脫氣處理的加熱室、進行利用各成膜材料的成膜的成膜室。而且,工件通過旋轉台的間歇旋轉而來到加熱室進行脫氣處理後,在成膜室中依次進行成膜處理。The workpiece is transported by being placed on a susceptor via a receiving plate, and the susceptor is placed on a rotating table that rotates intermittently. That is, at the stop position of the turntable that performs intermittent rotation, a heating chamber for performing degassing treatment and a film forming chamber for performing film formation using each film forming material are arranged. In addition, after the workpiece is brought to the heating chamber by the intermittent rotation of the turntable and subjected to degassing treatment, the film forming process is sequentially performed in the film forming chamber.

這些加熱室、成膜室等處理室設置在真空腔室內,處理室間在真空中被搬送。因此,在脫氣處理時已升溫至300℃左右為止的工件與基座未被冷卻,保持300℃左右。於是,若在成膜處理結束後,直接朝大氣空間中搬出,則已在高溫的工件上成膜的膜會氧化。因此,必須在朝大氣中搬送之前進行工件的冷卻。例如,使已升溫至300℃左右為止的工件降溫至作為為了朝大氣空間中搬出而需要的溫度的60℃左右為止。These processing chambers, such as a heating chamber and a film forming chamber, are installed in a vacuum chamber, and the processing chambers are transported in a vacuum. Therefore, the workpiece and the susceptor that have been heated to about 300°C during the degassing process are not cooled, and are maintained at about 300°C. Therefore, if the film is directly carried out into the air space after the film forming process is completed, the film formed on the high-temperature workpiece will be oxidized. Therefore, the workpiece must be cooled before being transported into the atmosphere. For example, the temperature of the workpiece that has been raised to about 300°C is lowered to about 60°C, which is the temperature required for carrying it out into the air space.

作為對工件進行冷卻的冷卻機構,有如下的機構:將工件收容在冷卻室內並進行密封,使冷卻介質在冷卻室內流通,藉此進行冷卻(參照專利文獻1)。在此種機構中,將基座載置在旋轉臺上來搬送,在與處理室對應的停止位置,利用具有推動器(pusher)的上推機構將基座向上推,而通過基座來將處理室密封。As a cooling mechanism for cooling the workpiece, there is a mechanism in which the workpiece is housed in a cooling chamber and sealed, and a cooling medium is circulated in the cooling chamber to perform cooling (see Patent Document 1). In this mechanism, the susceptor is placed on a rotating table for transportation, and at a stop position corresponding to the processing chamber, the susceptor is pushed up by a pusher mechanism with a pusher, and the processing is carried out by the susceptor. The chamber is sealed.

在包括冷卻機構的冷卻室中,也在上蓋設置冷卻介質進行循環的冷卻板,使通過推動器而已與基座一同被向上推的工件與冷卻板相向,將冷卻介質導入已由基座密封的冷卻室內,藉此進行基板的冷卻。 [現有技術文獻]In the cooling chamber including the cooling mechanism, the upper cover is also provided with a cooling plate for circulating the cooling medium, so that the workpiece that has been pushed up together with the base by the pusher faces the cooling plate, and the cooling medium is introduced into the sealed by the base. In the cooling chamber, the substrate is cooled by this. [Prior Art Literature]

[專利文獻] [專利文獻1] 日本專利第4653418號公報[Patent Literature] [Patent Document 1] Japanese Patent No. 4653418

[發明所要解決的問題] 此處,在使已升溫至300℃左右為止的基板降溫至為了朝大氣中搬出而需要的60℃左右為止時,需要進行約240℃這一大幅度的降溫的冷卻。但是,例如,當為了以每一節拍240秒左右進行一連串的處理而進行連續搬送時,若冷卻時間比其長,則冷卻處理變成限速的處理,處理量受到影響。[The problem to be solved by the invention] Here, when the temperature of the substrate that has been raised to about 300°C is lowered to about 60°C, which is required to be carried out into the atmosphere, it is necessary to perform a drastically lowered cooling of about 240°C. However, for example, when continuous conveyance is performed in order to perform a series of processing at approximately 240 seconds per tick, if the cooling time is longer than this, the cooling processing becomes speed-limited processing, and the processing amount is affected.

但是,由於冷卻在真空中進行,因此僅利用所述冷卻板的冷卻並不足夠,為了提高冷卻效率,必須對冷卻室內供給冷卻氣體。若導入冷卻氣體,則冷卻室內的壓力變高。However, since cooling is performed in a vacuum, cooling using only the cooling plate is not sufficient. In order to improve cooling efficiency, cooling gas must be supplied to the cooling chamber. If the cooling gas is introduced, the pressure in the cooling chamber becomes higher.

另一方面,設置有旋轉台的腔室保持真空。於是,將冷卻室與腔室的空間隔開的基座需要可承受腔室與冷卻室的壓力差的程度的強度。例如,基座由利用銅等金屬的厚板形成。因此,基座的熱容量變大。此種基座追隨工件而被持續加熱,因此當在冷卻室中對工件進行冷卻時,也必須對熱容量大的基座進行冷卻,冷卻效率不佳。On the other hand, the chamber provided with the rotating table maintains a vacuum. Therefore, the base that separates the cooling chamber from the space of the chamber needs to be strong enough to withstand the pressure difference between the chamber and the cooling chamber. For example, the base is formed of a thick plate made of metal such as copper. Therefore, the heat capacity of the susceptor becomes larger. Such a susceptor is continuously heated following the workpiece. Therefore, when the workpiece is cooled in the cooling chamber, the susceptor with a large heat capacity must also be cooled, and the cooling efficiency is not good.

本發明是為了解決如上所述的現有技術的問題點而提出者,其目的在於提供一種工件的冷卻效率優異的成膜裝置。 [解決問題的技術手段]The present invention was proposed in order to solve the problems of the prior art as described above, and its object is to provide a film forming apparatus with excellent cooling efficiency of a workpiece. [Technical means to solve the problem]

為了達成所述目的,實施方式的成膜裝置包括:腔室,可通過排氣來使內部變成真空;旋轉體,配置在所述腔室的內部,通過旋轉來搬送搭載有所述工件的基座;多個處理部,沿著將所述旋轉體的旋轉軸作為中心的圓周來配置,具有與所述腔室內連通的開口,對已被從所述開口導入的所述工件進行處理;以及推動器,朝所述工件從所述旋轉體脫離,並被從所述開口導入所述處理部內的方向對所述基座施力;所述多個處理部包含對所述工件進行加熱的加熱部、對所述工件進行成膜的成膜部、及對所述工件進行冷卻的冷卻部,在所述旋轉體設置有保持部,所述保持部保持所述旋轉體正在搬送的所述基座,並通過由所述推動器施力而解放所述基座,且在所述推動器設置有密封部,所述密封部將所述工件導入所述處理部,並且將所述開口密封。 [發明的效果]In order to achieve the above-mentioned object, the film forming apparatus of the embodiment includes: a chamber, which can be exhausted to make the inside a vacuum; a rotating body, which is arranged inside the chamber, and rotates to transport the substrate on which the workpiece is mounted. A plurality of processing parts, arranged along the circumference with the rotation axis of the rotating body as the center, having an opening communicating with the chamber, and processing the workpiece that has been introduced from the opening; and A pusher that applies force to the susceptor in a direction in which the workpiece is separated from the rotating body and introduced into the processing part from the opening; the plurality of processing parts include heating for heating the workpiece Section, a film forming section for forming a film on the work, and a cooling section for cooling the work, a holding section is provided on the rotating body, and the holding section holds the base that is being transported by the rotating body. The base is released by applying force by the pusher, and a sealing part is provided on the pusher, and the sealing part guides the workpiece into the processing part and seals the opening. [Effects of the invention]

根據本發明,可提供一種工件的冷卻效率優異的成膜裝置。According to the present invention, it is possible to provide a film forming apparatus excellent in cooling efficiency of a workpiece.

參照圖式對本發明的實施方式(以下,稱為本實施方式)進行具體說明。 [概要] 如圖1的平面圖以及圖2(A)及圖2(B)(圖1的A-A線剖面圖)所示,本實施方式的成膜裝置1是利用電漿對各個工件W進行成膜的裝置。成膜裝置1具有腔室2,且具有配置在所述腔室2的內部,搬送已搭載在基座S上的工件W的旋轉體3。在腔室2設置有多個處理部PR,所述多個處理部PR沿著將旋轉體3的旋轉軸作為中心的圓周來配置,具有與腔室2內連通的開口ОP,對已被從開口ОP導入的工件W進行處理。多個處理部PR包含:對工件W進行加熱的加熱部200,對工件W進行成膜的成膜部300A、成膜部300B、成膜部300C,及對工件W進行冷卻的冷卻部400。An embodiment of the present invention (hereinafter referred to as this embodiment) will be described in detail with reference to the drawings. [summary] As shown in the plan view of Fig. 1 and Figs. 2(A) and 2(B) (cross-sectional view taken along line AA in Fig. 1), the film forming apparatus 1 of the present embodiment is an apparatus for forming a film on each workpiece W using plasma . The film forming apparatus 1 has a chamber 2 and a rotating body 3 which is arranged inside the chamber 2 and transports the workpiece W mounted on the base S. The chamber 2 is provided with a plurality of treatment parts PR, the plurality of treatment parts PR are arranged along the circumference with the rotation axis of the rotating body 3 as the center, and have an opening ОP communicating with the inside of the chamber 2. The workpiece W introduced through the opening ОP is processed. The plurality of processing units PR include a heating unit 200 that heats the work W, a film formation unit 300A that forms a film on the work W, a film formation unit 300B, a film formation unit 300C, and a cooling unit 400 that cools the work W.

另外,在腔室2設置有推動器500,所述推動器500朝工件W經由開口ОP而被導入處理部PR的方向對基座S施力。在旋轉體3設置有保持部33,所述保持部33保持旋轉體3正在搬送的基座S,並通過由推動器500施力而放開基座S。在推動器500設置有密封部520,所述密封部520將工件W收容在各處理部PR,並且將開口ОP密封。即,不通過基座S來將各處理部PR密封,而通過與推動器500一同移動的密封部520來將各處理部PR氣密地密封。In addition, the chamber 2 is provided with a pusher 500 that urges the susceptor S in a direction in which the workpiece W is introduced into the processing part PR via the opening ОP. The rotating body 3 is provided with a holding portion 33 that holds the base S that the rotating body 3 is transporting, and releases the base S by applying force by the pusher 500. The pusher 500 is provided with a sealing part 520 which accommodates the workpiece W in each processing part PR and seals the opening ОP. That is, each treatment part PR is not sealed by the base S, but each treatment part PR is hermetically sealed by the sealing part 520 that moves together with the pusher 500.

[工件] 在本實施方式中,作為成膜對象即工件W的例子,使用平板狀的陶瓷基板。成膜裝置1通過成膜來將包含半導體、配線的電路形成在陶瓷基板上。但是,工件W的種類、形狀及材料並不限定於特定者。例如,作為工件W,也可以使用在中心具有凹部或凸部的彎曲的基板。另外,也可以將包含金屬、碳等導電性材料者,包含玻璃或橡膠等絕緣物者,包含矽等半導體者用作工件W。[Workpiece] In this embodiment, a flat ceramic substrate is used as an example of the workpiece W that is the target of film formation. The film forming apparatus 1 forms a circuit including a semiconductor and wiring on a ceramic substrate by forming a film. However, the type, shape, and material of the workpiece W are not limited to specific ones. For example, as the workpiece W, a curved substrate having a concave portion or a convex portion in the center may also be used. In addition, those containing conductive materials such as metal and carbon, those containing insulators such as glass or rubber, and those containing semiconductors such as silicon may be used as the workpiece W.

[基座] 基座S是搭載工件W,通過旋轉體3來搬送的構件。如圖3(A)的平面圖、圖3(B)的側面圖、圖3(C)的底面圖所示,本實施方式的基座S是圓形的薄板。在基座S的表面形成收容部Sa,在收容部Sa並排搭載多個工件W。收容部Sa是可將多個工件W不重疊地定位的凹部。搭載在基座S的工件W的數量是在各成膜部300中可同時進行成膜的數量。在本實施方式中,收容部Sa能夠以三行三列來載置工件W,因此可同時對合計九片工件W進行成膜。但是,所述數量並不限定於特定的數量。在基座S的背面形成有呈環狀地突出的腳部Sb。另外,基座S不具有可承受經密封的處理部PR內與腔室2內的氣壓差的強度。[Base] The base S is a member that mounts the workpiece W and is transported by the rotating body 3. As shown in the plan view of FIG. 3(A), the side view of FIG. 3(B), and the bottom view of FIG. 3(C), the base S of this embodiment is a circular thin plate. A housing portion Sa is formed on the surface of the base S, and a plurality of workpieces W are mounted side by side in the housing portion Sa. The accommodating part Sa is a recessed part which can position a some workpiece|work W without overlapping. The number of workpieces W mounted on the susceptor S is the number of simultaneous film formation in each film formation section 300. In the present embodiment, the accommodating portion Sa can place the workpieces W in three rows and three columns, so that a total of nine workpieces W can be film-formed at the same time. However, the number is not limited to a specific number. On the back surface of the base S, a leg part Sb protruding in a ring shape is formed. In addition, the susceptor S does not have the strength to withstand the air pressure difference between the sealed processing part PR and the chamber 2.

[腔室] 如圖1以及圖2(A)及圖2(B)所示,腔室2是可使內部變成真空的容器。本實施方式的腔室2為長方體形狀,設置面側變成箱形的收容體21,相反側變成將收容體21的開口密封的平板狀的蓋體22。在腔室2設置有腔室排氣部23。本實施方式的腔室排氣部23具有與形成在收容體21的開口連接的配管。腔室排氣部23包含未圖示的氣壓回路來構成,可進行利用排氣處理的腔室2內的減壓。[Chamber] As shown in FIGS. 1 and 2(A) and 2(B), the chamber 2 is a container that can make the inside a vacuum. The chamber 2 of the present embodiment has a rectangular parallelepiped shape, and the installation surface side becomes a box-shaped housing body 21, and the opposite side becomes a flat plate-shaped cover body 22 that seals the opening of the housing body 21. A chamber exhaust part 23 is provided in the chamber 2. The chamber exhaust portion 23 of the present embodiment has a pipe connected to the opening formed in the container 21. The chamber exhaust unit 23 is configured to include a pneumatic circuit not shown, and can perform decompression in the chamber 2 by exhaust treatment.

[旋轉體] 如圖4所示,旋轉體3是保持搭載有工件W的基座S,每次間歇旋轉規定的角度的旋轉台。本實施方式的旋轉體3為圓形的板狀體。旋轉體3通過未圖示的驅動源,以傳動軸31為中心進行間歇旋轉(參照圖2(A)及圖2(B))。在旋轉體3設置有密封部520在與旋轉平面交叉的方向上穿過的空隙部32。空隙部32是將旋轉體3的邊緣部在圓周等配位置上切割成部分圓形狀的部分。如圖1所示,空隙部32對應於多個處理部PR,即搬入搬出部100、加熱部200、成膜部300A、成膜部300B、成膜部300C、冷卻部400,以60°間隔設置有六個。空隙部32的內緣的大小以密封部520可穿過的方式形成。例如,與旋轉平面平行的部分圓的直徑比密封部520的直徑大。[Rotating body] As shown in FIG. 4, the rotating body 3 is a rotating table which holds the base S on which the workpiece|work W is mounted, and rotates a predetermined angle every time. The rotating body 3 of this embodiment is a circular plate-shaped body. The rotating body 3 is intermittently rotated around the transmission shaft 31 by a drive source not shown (refer to FIGS. 2(A) and 2(B)). The rotating body 3 is provided with a gap portion 32 through which the sealing portion 520 passes in a direction crossing the rotation plane. The gap portion 32 is a portion in which the edge portion of the rotating body 3 is cut into a partial circular shape at a circumferential equidistant position. As shown in FIG. 1, the void portion 32 corresponds to a plurality of processing portions PR, namely, the carry-in/unload portion 100, the heating portion 200, the film forming portion 300A, the film forming portion 300B, the film forming portion 300C, and the cooling portion 400, and are spaced at 60° intervals. There are six settings. The size of the inner edge of the gap portion 32 is formed in such a way that the sealing portion 520 can pass through. For example, the diameter of the partial circle parallel to the rotation plane is larger than the diameter of the sealing portion 520.

[保持部] 如圖5(A)至圖5(D)所示,在密封部520穿過空隙部32的過程中,保持部33在保持基座S的保持狀態與解放基座S的解放狀態中切換。一對保持部33配置在空隙部32的與搬送方向相向的位置。保持部33具有基台331、轉換部332、臂333、施力構件334。[Holding Department] As shown in FIGS. 5(A) to 5(D), during the process of the sealing portion 520 passing through the gap portion 32, the holding portion 33 is switched between the holding state of holding the base S and the releasing state of releasing the base S. The pair of holding portions 33 are arranged at positions facing the conveying direction of the gap portion 32. The holding part 33 has a base 331, a conversion part 332, an arm 333, and an urging member 334.

基台331是安裝在空隙部32的內緣的板狀的構件。轉換部332是可轉動地安裝在基台331的一對構件,將密封部520的動作轉換成與旋轉體3的旋轉平面平行的方向的旋轉。一對轉換部332並設在與旋轉體3的旋轉方向正交的方向。在轉換部332設置有輥332a,所述輥332a由設置在密封部520的後述的突出部523朝從基座S的邊緣部分離的方向施力。一對轉換部332的輥332a被突出部523施力,藉此將軸332b作為轉動軸,使各個轉換部332朝相反的方向轉動。The base 331 is a plate-shaped member attached to the inner edge of the cavity 32. The conversion part 332 is a pair of members rotatably mounted on the base 331 and converts the movement of the sealing part 520 into rotation in a direction parallel to the rotation plane of the rotating body 3. The pair of conversion parts 332 are juxtaposed in a direction orthogonal to the rotation direction of the rotating body 3. The conversion portion 332 is provided with a roller 332a that is biased in a direction away from the edge portion of the base S by a protrusion 523 provided in the sealing portion 520, which will be described later. The rollers 332a of the pair of conversion parts 332 are urged by the protruding part 523, whereby the shaft 332b is used as a rotation axis, and each conversion part 332 is rotated in the opposite direction.

臂333是一對細長的板,一端固定在轉換部332。臂333的另一端朝基座S的邊緣部延長。在臂333的另一端設置有握持部333a,所述握持部333a通過接觸基座S的邊緣部來握持基座S,且通過從基座S的邊緣部分離來放開基座S。握持部333a具有在已握持基座S時基座S的端面進行抵接的抵接面333b、及用於接觸基座S的背面來將基座S載置在臂333的保持面333c。一對臂333設置為可與轉換部332一同在握持部333a握持基座S的邊緣部的保持位置、與握持部333a放開基座S的退避位置之間轉動。握持部333a位於保持位置的狀態為保持狀態,握持部333a位於退避位置的狀態為解放狀態。The arms 333 are a pair of elongated plates, one end of which is fixed to the conversion part 332. The other end of the arm 333 extends toward the edge of the base S. A grip portion 333a is provided at the other end of the arm 333. The grip portion 333a grips the base S by contacting the edge of the base S, and releases the base S by separating from the edge of the base S. . The grip portion 333a has a contact surface 333b for contacting the end surface of the base S when the base S is gripped, and a holding surface 333c for contacting the back surface of the base S to place the base S on the arm 333 . The pair of arms 333 are configured to be rotatable together with the conversion portion 332 between the holding position where the grip portion 333 a grips the edge of the base S and the retreat position where the grip portion 333 a releases the base S. The state in which the grip portion 333a is located at the holding position is the holding state, and the state in which the grip portion 333a is located at the retracted position is the released state.

施力構件334是朝握持部333a接觸基座S的邊緣部的方向對轉換部332施力的構件。可將施力構件334設為設置在基台331與轉換部332之間的彈簧。例如,在本實施方式中,作為施力構件334,使用拉伸螺旋彈簧。施力構件334架設在板材334a與板材334b之間,所述板材334a固定在基台331,所述板材334b從基台331浮動並固定在轉換部332。The urging member 334 is a member that urges the conversion portion 332 in a direction in which the grip portion 333a contacts the edge portion of the base S. The urging member 334 may be a spring provided between the base 331 and the conversion part 332. For example, in this embodiment, as the urging member 334, a tension coil spring is used. The urging member 334 is erected between the plate 334 a and the plate 334 b, the plate 334 a is fixed to the base 331, and the plate 334 b floats from the base 331 and is fixed to the conversion part 332.

一對臂333通過施力構件334所施加的力而保持在握持部333a握持基座S的邊緣部的保持位置。在對應於處理部PR的各停止位置上,輥332a由突出部523施力,臂333與轉換部332一同轉動,藉此握持部333a移動至放開基座S的退避位置。若突出部523對於輥332a的施力被解除,則臂333通過施力構件334所施加的力,回到握持部333a握持基座S的邊緣部的保持位置。當臂333位於退避位置時,密封部520可穿過。即,位於退避位置的臂333的握持部333a變成接觸直徑比包含突出部523的密封部520的最大徑大的假想圓的位置。The pair of arms 333 are held at the holding position where the grip 333 a grips the edge of the base S by the force applied by the urging member 334. At each stop position corresponding to the treatment portion PR, the roller 332a is urged by the protrusion 523, and the arm 333 rotates together with the conversion portion 332, whereby the grip portion 333a moves to the retracted position where the base S is released. When the urging force of the protruding portion 523 on the roller 332a is released, the arm 333 returns to the holding position where the holding portion 333a grasps the edge of the base S by the force applied by the urging member 334. When the arm 333 is in the retracted position, the sealing portion 520 can pass through. That is, the grip portion 333a of the arm 333 located at the retracted position becomes a position where the contact diameter is larger than the maximum diameter of the sealing portion 520 including the protrusion 523 in a virtual circle.

[推動器] 如圖2(A)及圖2(B)、圖9以及圖10(A)及圖10(B)(圖1的B-B線剖面圖)所示,對應於搬入搬出部100、加熱部200、成膜部300A、成膜部300B、成膜部300C、冷卻部400,分別設置有推動器500A~推動器500F。以下,當不對推動器500A~推動器500F進行區分時,作為推動器500進行說明。[Pusher] As shown in Figure 2 (A) and Figure 2 (B), Figure 9 and Figure 10 (A) and Figure 10 (B) (the BB line cross-sectional view of Figure 1), corresponding to the loading and unloading unit 100, heating unit 200, The film forming section 300A, the film forming section 300B, the film forming section 300C, and the cooling section 400 are provided with pushers 500A to 500F, respectively. Hereinafter, when the pusher 500A to the pusher 500F are not distinguished, they will be described as the pusher 500.

推動器500具有傳動軸510、密封部520。如圖2(A)及圖2(B)所示,傳動軸510是圓柱形狀的構件,通過未圖示的驅動源而沿著軸進行移動。作為驅動源,例如可使用氣缸或馬達等。The pusher 500 has a transmission shaft 510 and a sealing part 520. As shown in FIG. 2(A) and FIG. 2(B), the transmission shaft 510 is a cylindrical member, and is moved along the shaft by a drive source not shown. As the driving source, for example, an air cylinder, a motor, or the like can be used.

密封部520是設置在傳動軸510的前端,與開口OP接觸/分離的構件。如圖6所示,密封部520是與傳動軸510同軸的圓柱形狀的構件。密封部520具有載置台521、密封體522及突出部523。載置台521是設置在面向旋轉體3之側,朝開口OP側對基座S施力的圓柱形狀的部分。載置台521的面向基座S的面是載置面521a,所述載置面521a具有與腳部Sb的內徑相同或略小的直徑,以嵌入基座S的腳部Sb的內側。密封體522是由傳動軸510同軸地支撐,比載置台521擴徑的圓柱形狀的部分。密封體522的面向旋轉體3的面變成呈環狀地形成在載置台521的周圍的密封面522a。在密封面522a設置有O型圈等密封材料522b。The sealing portion 520 is a member that is provided at the front end of the transmission shaft 510 and is in contact with/separated from the opening OP. As shown in FIG. 6, the sealing part 520 is a cylindrical member coaxial with the transmission shaft 510. The sealing part 520 has a mounting table 521, a sealing body 522 and a protruding part 523. The mounting table 521 is a cylindrical portion that is provided on the side facing the rotating body 3 and urges the base S toward the opening OP. The surface of the mounting table 521 facing the base S is a mounting surface 521a having the same or slightly smaller diameter as the inner diameter of the foot Sb so as to be fitted into the inside of the foot Sb of the base S. The sealing body 522 is a cylindrical part that is coaxially supported by the transmission shaft 510 and has a larger diameter than the mounting table 521. The surface of the sealing body 522 facing the rotating body 3 becomes a sealing surface 522 a formed in a ring shape around the mounting table 521. A sealing material 522b such as an O-ring is provided on the sealing surface 522a.

如圖9所示,密封體522的密封面522a接觸開口ОP的端部,藉此將各處理部PR密封。載置台521為了載置基座S並被收容在處理部PR內,而具有比開口ОP小的直徑。密封體522的密封面522a為了穿過空隙部32,直徑比空隙部32小,但為了將開口ОP密封,具有比開口ОP大的直徑。As shown in FIG. 9, the sealing surface 522a of the sealing body 522 contacts the end part of the opening OP, and each process part PR is sealed by this. The mounting table 521 has a diameter smaller than the opening ОP in order to mount the base S and to be housed in the processing part PR. The sealing surface 522a of the sealing body 522 has a diameter smaller than that of the gap 32 in order to pass through the gap 32, but has a larger diameter than the opening ОP in order to seal the opening ОP.

在本實施方式中,突出部523是從密封體522的外周膨出,在傳動軸510的軸方向上延長的長方體形狀的部分。突出部523的密封面522a側的端面變成傾斜面523a。傾斜面523a是以隨著從密封體522的外周朝向外側,突出部523的軸方向的長度變短的方式傾斜的平坦面。突出部523的外周面523b是與傾斜面523a連續,在軸方向上延長的平坦面。如圖5(A)至圖5(D)所示,所述傾斜面523a及外周面523b伴隨密封部520的移動而與保持部33的輥332a接觸/分離,使臂333轉動。因此,構成將傾斜面523a及外周面523b作為主動凸輪,將輥332a作為從動凸輪的凸輪機構。In this embodiment, the protruding portion 523 is a rectangular parallelepiped portion that bulges from the outer periphery of the sealing body 522 and extends in the axial direction of the transmission shaft 510. The end surface of the protruding portion 523 on the sealing surface 522a side becomes an inclined surface 523a. The inclined surface 523a is a flat surface that is inclined so that the length of the protruding portion 523 in the axial direction becomes shorter from the outer periphery of the sealing body 522 toward the outside. The outer peripheral surface 523b of the protruding portion 523 is a flat surface that is continuous with the inclined surface 523a and extends in the axial direction. As shown in FIG. 5(A) to FIG. 5(D), the inclined surface 523 a and the outer peripheral surface 523 b come into contact with/separate from the roller 332 a of the holding portion 33 along with the movement of the sealing portion 520 to rotate the arm 333. Therefore, a cam mechanism having the inclined surface 523a and the outer peripheral surface 523b as the driving cam and the roller 332a as the driven cam is configured.

如圖7及圖8所示,若密封部520朝開口OP移動,傾斜面523a對輥332a施力,則如上所述,臂333朝退避位置進行轉動,因此基座S被放開。另外,載置台521的載置面521a進入基座S的腳部Sb的內側。若密封部520穿過空隙部32,則如圖9所示,密封面522a經由密封材料522b而接觸開口ОP的端部並進行密封。即,密封部520伴隨推動器500的移動,使處理部PR的開口OP開閉。另外,圖7~圖11(B)的保持部33雖然省略施力構件等一部分的構件來圖示,但具有與圖5(A)至圖5(D)相同的構成。As shown in FIGS. 7 and 8, when the sealing portion 520 moves toward the opening OP and the inclined surface 523a urges the roller 332a, as described above, the arm 333 rotates toward the retracted position, and therefore the base S is released. In addition, the placement surface 521a of the placement table 521 enters the inner side of the leg portion Sb of the base S. If the sealing part 520 penetrates the gap part 32, as shown in FIG. 9, the sealing surface 522a will contact the end part of the opening OP via the sealing material 522b, and will seal. That is, the sealing part 520 opens and closes the opening OP of the treatment part PR in accordance with the movement of the pusher 500. In addition, although the holding part 33 of FIGS. 7-11(B) abbreviate|omits some members, such as a urging member, it has the same structure as FIG. 5(A) to FIG. 5(D).

推動器500A~推動器500F的密封部520分別將搬入搬出部100、加熱部200、成膜部300A~成膜部300C及冷卻部400的各室的開口OP密封。此處,構成在後述的搬入搬出部100的加載互鎖(load-lock)室121與真空的腔室2內及外部的大氣壓的壓力差變大。另外,構成冷卻部400的冷卻室410在冷卻氣體導入時變成大致接近大氣壓的1000 Pa~未滿大氣壓的壓力,與真空的腔室2內的壓力差變大。因此,密封部520變成可承受此種壓力差的強度。The sealing parts 520 of the pusher 500A to the pusher 500F seal the openings OP of the respective chambers of the carry-in/out part 100, the heating part 200, the film forming part 300A to the film forming part 300C, and the cooling part 400, respectively. Here, the pressure difference between the load-lock chamber 121 constituting the load-in/out unit 100 described later and the atmospheric pressure inside and outside the vacuum chamber 2 becomes large. In addition, the cooling chamber 410 constituting the cooling unit 400 becomes a pressure of 1000 Pa which is substantially close to the atmospheric pressure to less than the atmospheric pressure when the cooling gas is introduced, and the pressure difference with the vacuum chamber 2 becomes large. Therefore, the sealing portion 520 becomes strong enough to withstand such a pressure difference.

[搬入搬出部] 如圖2(A)及圖2(B)所示,在維持腔室2的內部的真空的狀態下,搬入搬出部100經由搬送部110、加載互鎖室121而從外部朝腔室2的內部搬入未處理的工件W,並朝腔室2的外部搬出處理完的工件W。[Move in and out department] As shown in Figures 2(A) and 2(B), while maintaining the vacuum inside the chamber 2, the carry-in and carry-out unit 100 is moved from the outside to the chamber 2 via the transport unit 110 and the load lock chamber 121 The unprocessed work W is carried in inside, and the processed work W is carried out to the outside of the chamber 2.

如圖1以及圖2(A)及圖2(B)所示,搬送部110從前步驟至後步驟,從搬送搭載有工件W的基座S的輸送機等搬送機構TR拾取未處理的工件W,並交付至後述的加載互鎖室121。另外,搬送部110從加載互鎖室121接收處理完的工件W,並交付至搬送機構TR。As shown in FIGS. 1 and 2(A) and 2(B), the conveying unit 110 picks up the unprocessed workpiece W from a conveying mechanism TR such as a conveyor that conveys the base S on which the workpiece W is mounted from the previous step to the latter step. , And delivered to the load lock chamber 121 described later. In addition, the transport unit 110 receives the processed workpiece W from the load lock chamber 121 and delivers it to the transport mechanism TR.

搬送部110具有臂111、保持體112。臂111是在搬送機構TR與腔室2之間,設置在與旋轉體3的平面平行的方向上的長尺寸的構件。臂111設置為通過未圖示的驅動機構,能夠以與旋轉體3的旋轉軸平行的軸為中心間歇地每次轉動180°、且可沿著所述軸移動。The conveying unit 110 has an arm 111 and a holding body 112. The arm 111 is a long member provided in a direction parallel to the plane of the rotating body 3 between the transport mechanism TR and the chamber 2. The arm 111 is provided to be capable of intermittently rotating 180° at a time around an axis parallel to the rotation axis of the rotating body 3 by a drive mechanism not shown, and being movable along the axis.

保持體112是設置在臂111的兩端,保持工件W的構件。保持體112利用真空卡盤、靜電卡盤、機械式卡盤等保持機構來保持工件W。保持體112也作為使加載互鎖室121開閉的蓋體發揮功能。即,在保持體112設置有用於將加載互鎖室121密封的O型圈等密封材料。另外,在搬送機構TR設置有推動器,所述推動器通過未圖示的驅動機構而移動,藉此使搭載有工件W的基座S在搬送機構TR與保持體112之間移動。The holding body 112 is a member that is provided at both ends of the arm 111 and holds the workpiece W. The holding body 112 uses a holding mechanism such as a vacuum chuck, an electrostatic chuck, and a mechanical chuck to hold the workpiece W. The holding body 112 also functions as a cover for opening and closing the load lock chamber 121. That is, a sealing material such as an O-ring for sealing the load lock chamber 121 is provided in the holding body 112. In addition, the transport mechanism TR is provided with a pusher, and the pusher is moved by a driving mechanism (not shown), whereby the base S on which the workpiece W is mounted is moved between the transport mechanism TR and the holding body 112.

在維持腔室2內的真空的狀態下,加載互鎖室121可進行基座S的搬入搬出。加載互鎖室121是被形成在腔室2的蓋體22的貫穿孔的內側面包圍,收容保持體112已保持的工件W並可密閉的空間。在加載互鎖室121中,腔室2的外部側的端部具有開口121a,由保持體112密封。另外,在加載互鎖室121中,腔室2的內部側的端部為開口121b。所述開口121b相當於由密封部520密封的開口OP。The load lock chamber 121 can carry in and out of the susceptor S while maintaining the vacuum in the chamber 2. The load lock chamber 121 is a space that is enclosed by the inner surface of the through hole formed in the lid 22 of the chamber 2 and accommodates the workpiece W held by the holder 112 and can be sealed. In the load lock chamber 121, the end portion on the outer side of the chamber 2 has an opening 121 a and is sealed by the holder 112. In addition, in the load lock chamber 121, the inner end of the chamber 2 is an opening 121b. The opening 121b corresponds to the opening OP sealed by the sealing portion 520.

另外,雖然未圖示,但在加載互鎖室121設置有排氣管與通氣管,所述排氣管是與氣壓回路連接,用於對經密封的加載互鎖室121進行減壓的路徑,所述通氣管與閥等連接,用於進行加載互鎖室121的真空破壞。In addition, although not shown, the load lock chamber 121 is provided with an exhaust pipe and a vent pipe. The exhaust pipe is connected to a pneumatic circuit and is used to depressurize the sealed load lock chamber 121. , The vent pipe is connected with a valve and the like, and is used for vacuum destruction of the load lock chamber 121.

[加熱部] 如圖10(A)及圖10(B)(圖1的B-B線剖面圖)所示,加熱部200進行通過加熱來使工件W中所含有的水分或大氣排出的脫氣處理。加熱部200具有加熱室210、加熱器220。加熱室210是具有朝向腔室2內部的開口210a的容器的內部空間。如上所述,開口210a的端部由密封體522的密封面522a密封,已載置在基座S的工件W被收容在加熱室210(圖10(B)的狀態)。所述開口210a相當於由密封部520密封的開口OP。[Heating Department] As shown in FIG. 10(A) and FIG. 10(B) (cross-sectional view taken along the line B-B in FIG. 1 ), the heating unit 200 performs a degassing process for exhausting moisture or air contained in the work W by heating. The heating unit 200 has a heating chamber 210 and a heater 220. The heating chamber 210 is an internal space of a container having an opening 210a facing the inside of the chamber 2. As described above, the end of the opening 210a is sealed by the sealing surface 522a of the sealing body 522, and the workpiece W placed on the base S is accommodated in the heating chamber 210 (the state of FIG. 10(B)). The opening 210a corresponds to the opening OP sealed by the sealing portion 520.

加熱器220是將通過通電而發熱的發熱體內置在如下的構件而成的裝置,所述構件是在加熱室210的內部,配置在與旋轉體3的旋轉平面平行的方向上的圓板形狀的構件。為了對工件W均勻地進行加熱,加熱器220的直徑優選與工件W相等或略大。加熱器220與已被收容在加熱室210的工件W不接觸而相向。另外,雖然未圖示,但加熱器220的發熱體與通過施加電力來使其發熱的電源連接。若考慮工件W為陶瓷基板,則為了有效地進行脫氣處理,優選將加熱器220的加熱溫度設為300℃左右,但並不限定於此。The heater 220 is a device in which a heating element that generates heat by energization is built into the following member in the shape of a circular plate arranged in a direction parallel to the rotation plane of the rotating body 3 inside the heating chamber 210的Components. In order to uniformly heat the workpiece W, the diameter of the heater 220 is preferably equal to or slightly larger than the workpiece W. The heater 220 faces the workpiece W stored in the heating chamber 210 without contacting it. In addition, although not shown, the heating element of the heater 220 is connected to a power source that generates heat by applying electric power. Considering that the workpiece W is a ceramic substrate, in order to effectively perform the degassing treatment, it is preferable to set the heating temperature of the heater 220 to about 300° C., but it is not limited to this.

[成膜部] 成膜部300A、成膜部300B、成膜部300C通過濺鍍來對工件W進行成膜。在以下的說明中,當不對成膜部300A、成膜部300B、成膜部300C進行區分時,作為成膜部300進行說明。如圖2(A)及圖2(B)、圖10(A)及圖10(B)以及圖11(A)及圖11(B)(圖1的C-C線剖面圖)所示,成膜部300具有成膜室310、靶320。成膜室310是具有朝向腔室2內部的開口310a的容器的內部空間,如上所述,開口310a的端部由密封體522的密封面522a密封,已載置在基座S的工件W被收容在成膜室310(圖10(B)的狀態)。[Film Formation Department] The film forming section 300A, the film forming section 300B, and the film forming section 300C form a film on the workpiece W by sputtering. In the following description, when the film-forming part 300A, the film-forming part 300B, and the film-forming part 300C are not distinguished, they will be described as the film-forming part 300. As shown in Fig. 2(A) and Fig. 2(B), Fig. 10(A) and Fig. 10(B) and Fig. 11(A) and Fig. 11(B) (the cross-sectional view of line CC in Fig. 1), the film is formed The part 300 has a film forming chamber 310 and a target 320. The film forming chamber 310 is the internal space of the container having an opening 310a facing the inside of the chamber 2. As described above, the end of the opening 310a is sealed by the sealing surface 522a of the sealing body 522, and the workpiece W placed on the base S is It is housed in the film formation chamber 310 (the state of FIG. 10(B)).

靶320是由通過濺鍍而堆積在工件W,並成為膜的成膜材料所形成的構件。靶320由未圖示的支承板保持,經由電極而與電源連接。作為成膜材料,例如使用矽、鈮、鉭、鈦、鋁等。但是,只要是通過濺鍍來成膜的材料,則可應用各種材料。在本實施方式中,在成膜部300A、成膜部300B、成膜部300C中使用不同的成膜材料的靶320,但也可以使用相同的成膜材料的靶320。The target 320 is a member formed of a film-forming material that is deposited on the workpiece W by sputtering and becomes a film. The target 320 is held by a support plate (not shown), and is connected to a power source via electrodes. As the film-forming material, for example, silicon, niobium, tantalum, titanium, aluminum, etc. are used. However, as long as it is a material that forms a film by sputtering, various materials can be applied. In this embodiment, the target 320 of different film forming materials is used for the film forming part 300A, the film forming part 300B, and the film forming part 300C, but the target 320 of the same film forming material may be used.

另外,雖然未圖示,但在成膜部300設置有將濺鍍氣體導入成膜室310內的濺鍍氣體導入部、排出濺鍍氣體的排氣部。作為濺鍍氣體,例如可使用氬氣等惰性氣體。濺鍍氣體導入部包含氣體供給回路來構成,可將來自供給源的濺鍍氣體導入成膜室310內。排氣部包含氣壓回路來構成,可進行利用排氣處理的成膜室310內的減壓。在成膜部300中,通過電源來對靶320施加電力,藉此可使已被導入成膜室310的濺鍍氣體電漿化,而使成膜材料堆積在工件W。In addition, although not shown, the film forming section 300 is provided with a sputtering gas introduction section for introducing the sputtering gas into the film forming chamber 310 and an exhaust section for exhausting the sputtering gas. As the sputtering gas, for example, an inert gas such as argon gas can be used. The sputtering gas introduction unit is configured to include a gas supply circuit, and can introduce the sputtering gas from the supply source into the film forming chamber 310. The exhaust part is constituted by including a pneumatic circuit, and can perform decompression in the film formation chamber 310 by exhaust treatment. In the film forming section 300, power is applied to the target 320 by a power source, whereby the sputtering gas introduced into the film forming chamber 310 can be plasma-ized, and the film forming material can be deposited on the workpiece W.

[冷卻部] 冷卻部400將被朝大氣中排出之前的工件W冷卻至可防止膜在大氣中被氧化的溫度為止。如圖7、圖11(A)及圖11(B)所示,冷卻部400具有冷卻室410、第一冷卻機構420。冷卻室410是具有朝向腔室2內部的開口410a的容器的內部空間。如上所述,開口410a的端部由密封體522的密封面522a密封,已載置在基座S上的工件W被收容在冷卻室410中。所述開口410a相當於由密封部520密封的開口OP。[Cooling Department] The cooling unit 400 cools the workpiece W before being discharged into the atmosphere to a temperature that can prevent the film from being oxidized in the atmosphere. As shown in FIGS. 7, 11 (A), and 11 (B), the cooling unit 400 includes a cooling chamber 410 and a first cooling mechanism 420. The cooling chamber 410 is an internal space of a container having an opening 410a facing the inside of the chamber 2. As described above, the end of the opening 410a is sealed by the sealing surface 522a of the sealing body 522, and the workpiece W placed on the base S is accommodated in the cooling chamber 410. The opening 410a corresponds to the opening OP sealed by the sealing portion 520.

第一冷卻機構420具有冷卻器421、冷卻氣體導入部422。冷卻器421是將冷卻液循環管道423內置在如下的構件而成的裝置,所述構件是在冷卻室410的內部,配置在與旋轉體3的旋轉平面平行的方向上的圓板形狀的構件。冷卻液循環管道423是在冷卻器421的內部,包含與冷卻器421同軸的螺旋狀部分來形成,且冷卻液可進行循環的通道。冷卻液循環管道423與未圖示的冷卻液供給源連接,並與將冷卻液循環供給至冷卻液流路內的配管連接。The first cooling mechanism 420 has a cooler 421 and a cooling gas introduction part 422. The cooler 421 is a device in which the cooling liquid circulation pipe 423 is built in the following member, which is a disk-shaped member arranged in the cooling chamber 410 in a direction parallel to the rotation plane of the rotating body 3 . The cooling liquid circulation pipe 423 is formed inside the cooler 421 and includes a spiral part coaxial with the cooler 421, and a passage through which the cooling liquid can circulate. The cooling liquid circulation pipe 423 is connected to a cooling liquid supply source not shown, and is connected to a pipe that circulates and supplies the cooling liquid into the cooling liquid flow path.

冷卻氣體導入部422具有導入冷卻氣體G的配管。例如,可將氮氣等惰性氣體用作冷卻氣體G。尤其若設為不含水分的高純度的氮氣,則可防止已成膜的膜的氧化。冷卻氣體導入部422包含未圖示的氣體供給回路來構成,可將來自供給源的冷卻氣體G導入冷卻室410內。The cooling gas introduction part 422 has a piping into which the cooling gas G is introduced. For example, an inert gas such as nitrogen can be used as the cooling gas G. In particular, if it is made of high-purity nitrogen that does not contain moisture, it is possible to prevent the oxidation of the film that has been formed. The cooling gas introduction part 422 is configured to include a gas supply circuit not shown, and can introduce the cooling gas G from the supply source into the cooling chamber 410.

另外,設置在與冷卻部400對應的推動器500F的密封部520作為第二冷卻機構430發揮功能。第二冷卻機構430具有冷卻液循環管道431、冷卻液供給部432。冷卻液循環管道431是在密封部520的內部,包含與密封部520同軸的螺旋狀部分來形成,且冷卻液可進行循環的通道。冷卻液供給部432具有導入冷卻液的配管。冷卻液供給部432與未圖示的冷卻液供給源連接,將冷卻液循環供給至冷卻液循環管道431內。In addition, the sealing part 520 provided in the pusher 500F corresponding to the cooling part 400 functions as the second cooling mechanism 430. The second cooling mechanism 430 has a cooling liquid circulation pipe 431 and a cooling liquid supply part 432. The cooling liquid circulation duct 431 is formed inside the sealing portion 520 and including a spiral part coaxial with the sealing portion 520, and a passage through which the cooling liquid can circulate. The cooling liquid supply unit 432 has a pipe for introducing the cooling liquid. The cooling liquid supply unit 432 is connected to a cooling liquid supply source not shown, and circulates and supplies the cooling liquid into the cooling liquid circulation pipe 431.

如上所述,為了變成在已被朝大氣空間搬出時,防止已成膜的膜被氧化的溫度,冷卻器421及冷卻氣體G的冷卻溫度優選以變成60℃左右的方式設定,但並不限定於此。As described above, in order to change the temperature to prevent the film formed from being oxidized when it has been carried out into the air space, the cooling temperature of the cooler 421 and the cooling gas G is preferably set to be about 60°C, but it is not limited. Here.

進而,冷卻部400具有調整冷卻室410的內壓的冷卻室排氣部424。本實施方式的冷卻室排氣部424具有與形成在冷卻室410的開口連接的配管。冷卻室排氣部424包含未圖示的氣壓回路來構成,可進行利用排氣處理的冷卻室410內的減壓。另外,在冷卻部400設置有檢測冷卻室410的內壓的未圖示的壓力感測器、及檢測冷卻室410內的溫度的未圖示的溫度感測器。壓力感測器與後述的控制裝置70、輸出裝置79一同構成監視冷卻室410的內壓的壓力監視器。溫度感測器與控制裝置70、輸出裝置79一同構成監視冷卻室410內的溫度的溫度監視器。Furthermore, the cooling part 400 has a cooling chamber exhaust part 424 which adjusts the internal pressure of the cooling chamber 410. The cooling chamber exhaust portion 424 of the present embodiment has a pipe connected to the opening formed in the cooling chamber 410. The cooling chamber exhaust unit 424 is configured to include an unshown pneumatic circuit, and can perform decompression in the cooling chamber 410 by exhaust treatment. In addition, the cooling unit 400 is provided with a pressure sensor (not shown) that detects the internal pressure of the cooling chamber 410 and a temperature sensor (not shown) that detects the temperature in the cooling chamber 410. The pressure sensor constitutes a pressure monitor that monitors the internal pressure of the cooling chamber 410 together with the control device 70 and the output device 79 described later. The temperature sensor, the control device 70 and the output device 79 constitute a temperature monitor that monitors the temperature in the cooling chamber 410.

[控制裝置] 如圖12所示,控制裝置70是控制成膜裝置1的各部的裝置。所述控制裝置70例如可包含專用的電子電路或以規定的程序進行運行的電腦等。搬入搬出部100、加熱部200、成膜部300A~成膜部300C、冷卻部400的控制內容被編程,通過可編程邏輯控制器(Programmable Logic Controller,PLC)或中央處理器(Central Processing Unit,CPU)等處理裝置來執行。[Control device] As shown in FIG. 12, the control device 70 is a device that controls each part of the film forming apparatus 1. The control device 70 may include, for example, a dedicated electronic circuit, a computer that runs with a predetermined program, or the like. The control contents of the carry-in and carry-out section 100, the heating section 200, the film forming section 300A to the film forming section 300C, and the cooling section 400 are programmed through a programmable logic controller (Programmable Logic Controller, PLC) or a central processing unit (Central Processing Unit, CPU) and other processing devices to execute.

控制裝置70利用如上所述的程序,如圖12的框圖所示發揮功能。即,控制裝置70具有機構控制部71、加熱控制部72、成膜控制部73、冷卻控制部74、記憶部75、設定部76、輸入輸出控制部77。The control device 70 uses the above-mentioned program to function as shown in the block diagram of FIG. 12. That is, the control device 70 has a mechanism control unit 71, a heating control unit 72, a film formation control unit 73, a cooling control unit 74, a storage unit 75, a setting unit 76, and an input/output control unit 77.

機構控制部71控制各部的驅動源、閥、電源等。加熱控制部72控制加熱器220的電源,藉此控制加熱溫度。成膜控制部73控制朝靶320的施加電力、濺鍍氣體的導入量,藉此控制成膜量。冷卻控制部74控制第一冷卻機構420、第二冷卻機構430的冷卻液的溫度,冷卻氣體G的供給量,藉此控制冷卻溫度。記憶部75記憶本實施方式的控制中需要的資訊。設定部76將已從外部輸入的資訊設定在記憶部75。例如,設定部76設定與用於加熱的目標溫度對應的加熱部200的加熱溫度,與用於冷卻的目標溫度對應的冷卻部400的冷卻溫度,用於控制冷卻室410的排氣的規定的溫度、規定的壓力、規定的時間等。The mechanism control unit 71 controls the drive source, valve, power source, etc. of each unit. The heating control unit 72 controls the power supply of the heater 220, thereby controlling the heating temperature. The film formation control unit 73 controls the power applied to the target 320 and the amount of sputtering gas introduced, thereby controlling the amount of film formation. The cooling control unit 74 controls the temperature of the cooling liquid of the first cooling mechanism 420 and the second cooling mechanism 430 and the supply amount of the cooling gas G, thereby controlling the cooling temperature. The storage unit 75 stores information necessary for the control of this embodiment. The setting unit 76 sets the information input from the outside in the storage unit 75. For example, the setting unit 76 sets the heating temperature of the heating unit 200 corresponding to the target temperature for heating, and the cooling temperature of the cooling unit 400 corresponding to the target temperature for cooling, to control a predetermined amount of exhaust gas from the cooling chamber 410 Temperature, prescribed pressure, prescribed time, etc.

輸入輸出控制部77是控制與成為控制對象的各部之間的信號的轉換或輸入輸出的接口。進而,控制裝置70與輸入裝置78、輸出裝置79連接。輸入裝置78是用於操作員經由控制裝置70而對成膜裝置1進行操作的開關、觸控螢幕、鍵盤、鼠標等輸入零件。The input/output control unit 77 is an interface that controls the conversion or input/output of signals with each unit to be controlled. Furthermore, the control device 70 is connected to the input device 78 and the output device 79. The input device 78 is an input component such as a switch, a touch screen, a keyboard, and a mouse for the operator to operate the film forming apparatus 1 via the control device 70.

輸出裝置79是使用於確認裝置的狀態的資訊變成操作員可辨認的狀態的顯示器、燈、儀錶等輸出零件。例如,輸出裝置79可顯示來自輸入裝置78的資訊的輸入畫面。例如,使冷卻室410的內部的壓力、溫度顯示,操作員可進行監視。The output device 79 is an output part such as a display, a lamp, a meter, and the like for confirming that the information of the state of the device becomes a state that can be recognized by the operator. For example, the output device 79 may display an input screen of information from the input device 78. For example, the pressure and temperature inside the cooling chamber 410 are displayed and the operator can monitor them.

[動作] 參照所述圖式,對利用如以上那樣的本實施方式的成膜裝置1在工件W進行成膜的處理進行說明。另外,成膜裝置1的各處理部PR可一邊同時搬送多個基座S,一邊一併進行對於各工件W的處理,但在以下的說明中,著眼於已載置在一個基座S的工件W進行說明。[action] With reference to the drawings, the process of forming a film on the workpiece W using the film forming apparatus 1 of the present embodiment as described above will be described. In addition, each processing unit PR of the film forming apparatus 1 can simultaneously transport a plurality of pedestals S while simultaneously processing each workpiece W. However, in the following description, focus on those that have been placed on one pedestal S. The work W will be explained.

(工件的搬入) 首先,對利用搬入搬出部100,將應進行成膜處理的工件W搬入腔室2內的動作進行說明。如圖2(A)所示,旋轉體3的空隙部32被定位在與搬入搬出部100的開口121b相向的位置,通過已由推動器500A施力的密封部520的密封體522來將開口121b密封。另外,腔室2內通過氣壓回路的排氣處理而變成真空。(Loading of workpieces) First, the operation of carrying the workpiece W to be subjected to the film forming process into the chamber 2 by the carry-in and carry-out unit 100 will be described. As shown in FIG. 2(A), the gap portion 32 of the rotating body 3 is positioned at a position opposite to the opening 121b of the carry-in and carry-out portion 100, and the opening is closed by the sealing body 522 of the sealing portion 520 that has been energized by the pusher 500A. 121b sealed. In addition, the inside of the chamber 2 is evacuated by the exhaust process of the pneumatic circuit.

在此狀態下,如圖1所示,通過搬送機構TR來搬送的搭載有未處理的工件W的基座S由未圖示的推動器施力,而由搬送部110的保持體112保持。通過臂111進行轉動,搭載有未處理的工件W的基座S來到與開口121a相向的位置。臂111朝接近開口121a的方向移動,保持體112將開口121b密封,藉此將加載互鎖室121密閉。In this state, as shown in FIG. 1, the base S carrying the unprocessed workpiece W transported by the transport mechanism TR is urged by a pusher (not shown) and held by the holder 112 of the transport unit 110. As the arm 111 rotates, the base S on which the unprocessed work W is mounted comes to a position facing the opening 121a. The arm 111 moves in a direction approaching the opening 121a, and the holding body 112 seals the opening 121b, thereby sealing the load lock chamber 121.

通過氣壓回路而從排氣管進行排氣,藉此將加載互鎖室121減壓至變成與腔室2內相同為止。保持體112解除工件W的保持,藉此工件W被載置在密封加載互鎖室121的密封部520的載置面521a。此時,如圖5(C)、圖5(D)所示,輥332a由突出部523施力,握持部333a位於退避位置。而且,如圖2(B)、圖5(A)、圖5(B)所示,推動器500A穿過旋轉體3的空隙部32,藉此輥332a從突出部523分離。於是,臂333進行轉動,握持部333a握持搭載有工件W的基座S。The pressure of the load lock chamber 121 is decompressed until the load lock chamber 121 becomes the same as the inside of the chamber 2 by exhausting air from the exhaust pipe through the pneumatic circuit. The holding body 112 releases the holding of the workpiece W, whereby the workpiece W is placed on the placing surface 521 a of the sealing portion 520 of the sealed load lock chamber 121. At this time, as shown in FIG. 5(C) and FIG. 5(D), the roller 332a is urged by the protrusion 523, and the grip portion 333a is located at the retracted position. And, as shown in FIG. 2(B), FIG. 5(A), and FIG. 5(B), the pusher 500A passes through the gap portion 32 of the rotating body 3, whereby the roller 332a is separated from the protrusion portion 523. Then, the arm 333 rotates, and the grip part 333a grips the base S on which the workpiece W is mounted.

(工件的加熱) 繼而,對針對已被搬入腔室2內的工件W進行加熱的處理進行說明。在加熱部200中,事先將加熱器220加熱至設定溫度。如圖10(A)所示,旋轉體3進行間歇旋轉,藉此基座S移動至加熱部200的加熱室210的開口210a的正下方。然後,使推動器500B朝接近開口210a的方向移動。於是,推動器500B穿過旋轉體3的空隙部32,藉此輥332a由突出部523施力,臂333進行轉動,握持部333a從基座S退避,並且基座S被載置在載置面521a。進而,若推動器500B朝接近開口210a的方向移動,則密封體522的密封面522a將開口210a的端面氣密地密封。藉此,如圖10(B)所示,工件W與基座S一同被收容在加熱室210內。(Heating of workpiece) Next, the process of heating the workpiece W that has been carried into the chamber 2 will be described. In the heating unit 200, the heater 220 is heated to a set temperature in advance. As shown in FIG. 10(A), the rotating body 3 performs intermittent rotation, whereby the susceptor S moves to just below the opening 210 a of the heating chamber 210 of the heating unit 200. Then, the pusher 500B is moved in a direction approaching the opening 210a. Then, the pusher 500B passes through the gap portion 32 of the rotating body 3, whereby the roller 332a is urged by the protrusion 523, the arm 333 rotates, the grip portion 333a is retracted from the base S, and the base S is placed on the carrier.置面521a. Furthermore, when the pusher 500B moves in a direction approaching the opening 210a, the sealing surface 522a of the sealing body 522 hermetically seals the end surface of the opening 210a. Thereby, as shown in FIG. 10(B), the workpiece W is housed in the heating chamber 210 together with the base S.

工件W在接近加熱器220的位置與加熱器220相向,因此通過經加熱的加熱器220來將工件W加熱至設定溫度為止。在工件W被加熱後,使推動器500B朝從開口210a分離的方向移動,藉此開口210a被打開,並且已搭載在載置面521a的基座S的工件W被從加熱室210排出。在推動器500B穿過旋轉體3的空隙部32的過程中,如上所述,保持部33的臂333進行轉動,握持部333a握持基座S,並且載置面521a從基座S分離。The work W faces the heater 220 at a position close to the heater 220, and therefore the work W is heated to the set temperature by the heated heater 220. After the workpiece W is heated, the pusher 500B is moved in a direction separating from the opening 210a, whereby the opening 210a is opened, and the workpiece W mounted on the susceptor S of the mounting surface 521a is discharged from the heating chamber 210. When the pusher 500B passes through the gap portion 32 of the rotating body 3, as described above, the arm 333 of the holding portion 33 rotates, the grip portion 333a grips the base S, and the placing surface 521a separates from the base S .

(成膜處理) 對如下的處理進行說明:在成膜部300A、成膜部300B、成膜部300C中,針對如以上那樣進行了加熱處理的工件W進行成膜。另外,成膜部300A、成膜部300B、成膜部300C的處理相同,因此主要對成膜部300A的處理進行說明。(Film forming process) A description will be given of the following processing: in the film forming section 300A, the film forming section 300B, and the film forming section 300C, a film is formed on the workpiece W that has been heat-treated as described above. In addition, since the processes of the film forming part 300A, the film forming part 300B, and the film forming part 300C are the same, the process of the film forming part 300A will be mainly described.

如圖11(A)所示,使旋轉體3進行間歇旋轉,藉此使工件W移動至與成膜部300A的開口310a相向的位置。而且,與所述同樣地,使推動器500C朝接近開口310a的方向移動,藉此工件W與基座S一同移動至成膜室310內。於是,如圖11(B)所示,密封體522的密封面522a將開口310a的端部氣密地密封。藉此,成膜室310被密閉。As shown in FIG. 11(A), by intermittently rotating the rotating body 3, the workpiece W is moved to a position facing the opening 310a of the film forming section 300A. Then, as described above, by moving the pusher 500C in a direction approaching the opening 310a, the workpiece W is moved into the film forming chamber 310 together with the base S. Then, as shown in FIG. 11(B), the sealing surface 522a of the sealing body 522 hermetically seals the end of the opening 310a. Thereby, the film forming chamber 310 is hermetically sealed.

在此狀態下,將濺鍍氣體導入成膜室310內,通過電源來對靶320施加電力。於是,濺鍍氣體電漿化而產生的離子衝撞靶320。構成靶320的成膜材料由離子擊出,並堆積在工件W。In this state, the sputtering gas is introduced into the film forming chamber 310, and power is applied to the target 320 by the power supply. Then, the ions generated by the plasmaization of the sputtering gas collide with the target 320. The film-forming material constituting the target 320 is ejected by ions, and is deposited on the workpiece W.

在成膜材料堆積在工件W後,從成膜室310中排出濺鍍氣體,並使成膜室310的壓力變成與腔室2相同。然後,若使推動器500朝從開口310a分離的方向移動,則如上所述,成膜室310的開口310a被打開,工件W與基座S一同被從成膜室310排出。進而,若推動器500進行移動,則基座S由保持部33保持,並且載置面521a從基座S分離。After the film-forming material is deposited on the workpiece W, the sputtering gas is discharged from the film-forming chamber 310 and the pressure of the film-forming chamber 310 is made the same as that of the chamber 2. Then, when the pusher 500 is moved in the direction separating from the opening 310a, the opening 310a of the film formation chamber 310 is opened as described above, and the workpiece W is discharged from the film formation chamber 310 together with the susceptor S. Furthermore, when the pusher 500 moves, the base S is held by the holding portion 33, and the mounting surface 521a is separated from the base S.

使旋轉體3進行間歇旋轉,藉此如圖2(B)所示,使工件W與基座S一同移動至成膜部300B的開口310a的正下方。然後,在成膜部300B中也進行與所述相同的成膜處理。在成膜部300B的成膜後,使旋轉體3進行間歇旋轉,藉此如圖10(A)所示,使工件W與基座S一同移動至成膜部300C的開口310a的正下方。然後,在成膜部300C中也進行與所述相同的成膜處理。By intermittently rotating the rotating body 3, as shown in FIG. 2(B), the workpiece W is moved together with the base S to just below the opening 310a of the film forming part 300B. Then, the same film forming process as described above is also performed in the film forming section 300B. After the film formation of the film formation section 300B, the rotating body 3 is intermittently rotated, whereby as shown in FIG. 10(A), the workpiece W is moved together with the base S to just below the opening 310 a of the film formation section 300C. Then, the same film-forming process as described above is also performed in the film-forming part 300C.

(工件的冷卻) 對針對如以上那樣進行了成膜處理的工件W進行冷卻的處理進行說明。另外,事先使冷卻液在第一冷卻機構420的冷卻器421進行循環,而冷卻至設定溫度。另外,也使冷卻液在第二冷卻機構430的冷卻液循環管道431進行循環,而冷卻至設定溫度。(Cooling of the workpiece) The process of cooling the workpiece W that has been subjected to the film formation process as described above will be described. In addition, the cooling liquid is circulated in the cooler 421 of the first cooling mechanism 420 in advance to be cooled to a set temperature. In addition, the cooling liquid is also circulated in the cooling liquid circulation pipe 431 of the second cooling mechanism 430 to be cooled to a set temperature.

如圖7及圖11(A)所示,使成膜完的工件W與基座S一同移動至冷卻部400的冷卻室410的開口410a的正下方。與所述同樣地,如圖8所示,使推動器500F朝接近開口410a的方向移動,如圖9及圖11(B)所示,將工件W與基座S一同收容在冷卻室410內,並通過密封體522的密封面522a來將開口410a的端部氣密地密封。藉此,冷卻室410被密閉。As shown in FIGS. 7 and 11(A), the film-formed workpiece W is moved together with the susceptor S to just below the opening 410 a of the cooling chamber 410 of the cooling unit 400. As described above, as shown in FIG. 8, the pusher 500F is moved in the direction approaching the opening 410a, and as shown in FIGS. 9 and 11(B), the workpiece W is housed in the cooling chamber 410 together with the base S , And the end of the opening 410a is hermetically sealed by the sealing surface 522a of the sealing body 522. Thereby, the cooling chamber 410 is hermetically sealed.

在此狀態下,通過冷卻氣體導入部422來將冷卻氣體G導入冷卻室410內。此時,冷卻室410的內壓到達大致接近大氣壓的1000 Pa~未滿大氣壓的壓力為止。於是,通過第一冷卻機構420的冷卻器421及冷卻氣體G、第二冷卻機構430,而將已載置在基座S的工件W高速地冷卻。若由溫度感測器檢測的冷卻室410的溫度到達規定的溫度,則通過冷卻室排氣部424來對冷卻室410內的空氣進行排氣。若由壓力感測器檢測的冷卻室410的內壓變成與腔室2相同程度的壓力,則停止利用冷卻室排氣部424的排氣。通過此種排氣動作,因將冷卻氣體G導入經密閉的冷卻室410內而上升的冷卻室410的內壓回到與腔室2相同程度的壓力為止。In this state, the cooling gas G is introduced into the cooling chamber 410 through the cooling gas introduction part 422. At this time, the internal pressure of the cooling chamber 410 reaches a pressure of 1000 Pa which is approximately close to the atmospheric pressure to a pressure of less than the atmospheric pressure. Then, the work W placed on the base S is cooled at high speed by the cooler 421 and the cooling gas G of the first cooling mechanism 420, and the second cooling mechanism 430. When the temperature of the cooling chamber 410 detected by the temperature sensor reaches a predetermined temperature, the air in the cooling chamber 410 is exhausted by the cooling chamber exhaust unit 424. If the internal pressure of the cooling chamber 410 detected by the pressure sensor becomes the same pressure as that of the chamber 2, the exhaust of the cooling chamber exhaust unit 424 is stopped. Through this exhaust operation, the internal pressure of the cooling chamber 410 raised by introducing the cooling gas G into the sealed cooling chamber 410 returns to the same pressure as the chamber 2.

其後,若使推動器500F朝從開口410a分離的方向移動,則如上所述,冷卻室410的開口410a被打開,工件W被從冷卻室410排出,並且基座S由保持部33保持,藉此載置面521a從基座S分離。After that, if the pusher 500F is moved in the direction separating from the opening 410a, as described above, the opening 410a of the cooling chamber 410 is opened, the workpiece W is discharged from the cooling chamber 410, and the base S is held by the holding portion 33, As a result, the mounting surface 521a is separated from the base S.

(工件的搬出) 進而,對通過搬入搬出部100,將成膜後經冷卻的工件W朝腔室2外搬出的動作進行說明。使旋轉體3進行間歇旋轉,藉此如圖2(B)所示,使工件W與基座S一同移動至加載互鎖室121的開口121b的正下方。(Move out the work piece) Furthermore, the operation of carrying out the work W cooled after film formation to the outside of the chamber 2 by the carrying-in and carrying-out unit 100 will be described. By intermittently rotating the rotating body 3, as shown in FIG. 2(B), the workpiece W is moved together with the base S to just below the opening 121 b of the load lock chamber 121.

如圖2(A)所示,使推動器500A朝接近開口121b的方向移動,藉此工件W與基座S一同移動至加載互鎖室121內。於是,密封體522的密封面522a將開口121b的端部氣密地密封。藉此,加載互鎖室121被密閉。通過密封加載互鎖室121的開口121a的保持體112來保持載置有處理完的工件W的基座S。然後,經由通氣管而供給排放氣(vent gas),藉此進行加載互鎖室121內的真空破壞。使臂111朝從開口121a分離的方向移動,藉此使保持體112移動,將加載互鎖室121打開。As shown in FIG. 2(A), the pusher 500A is moved in a direction approaching the opening 121b, whereby the workpiece W and the base S are moved into the load lock chamber 121 together. Then, the sealing surface 522a of the sealing body 522 hermetically seals the end of the opening 121b. Thereby, the load lock chamber 121 is hermetically sealed. The base S on which the processed workpiece W is placed is held by the holder 112 that seals the opening 121 a of the load lock chamber 121. Then, vent gas is supplied through the vent pipe, thereby performing the vacuum break in the load lock chamber 121. The arm 111 is moved in the direction separating from the opening 121a, thereby moving the holding body 112, and opening the load lock chamber 121.

如圖1所示,臂111進行轉動,藉此保持有基座S的保持體112來到與搬送機構TR相向的位置,已朝接近保持體112的方向移動的推動器支撐基座S,並且保持體112解除基座S的保持。而且,推動器將基座S載置在搬送機構TR並退避後,搬送機構TR朝後步驟搬送處理完的工件W。As shown in FIG. 1, the arm 111 rotates, whereby the holding body 112 holding the base S comes to a position facing the conveying mechanism TR, the pusher that has moved in the direction approaching the holding body 112 supports the base S, and The holding body 112 releases the holding of the base S. Then, after the pusher places the base S on the transport mechanism TR and retreats, the transport mechanism TR transports the processed work W toward the subsequent step.

[效果] 本實施方式的成膜裝置1具有:腔室2,可通過排氣來使內部變成真空;搬入搬出部100,在維持腔室2內的真空的狀態下,使工件W在腔室2的內部出入;旋轉體3,配置在腔室2的內部,通過旋轉來搬送搭載有工件W的基座S;多個處理部PR,沿著將旋轉體3的旋轉軸作為中心的圓周來配置,具有與腔室2內連通的開口ОP,對已被從開口ОP導入的工件W進行處理;以及推動器500,朝工件W從旋轉體3脫離,並被從開口ОP導入處理部PR內的方向對基座S施力。而且,多個處理部PR包含對工件W進行加熱的加熱部200、對工件W進行成膜的成膜部300、及對工件W進行冷卻的冷卻部400,在旋轉體3設置有保持部33,所述保持部33保持旋轉體3正在搬送的基座S,並通過由推動器500施力而放開基座S,在推動器500設置有密封部520,所述密封部520將工件W導入處理部PR,並且將開口ОP密封。[effect] The film forming apparatus 1 of this embodiment has: a chamber 2 that can be evacuated to make the inside a vacuum; and the carry-in/unload unit 100 keeps the workpiece W inside the chamber 2 while maintaining the vacuum in the chamber 2 In and out; the rotating body 3 is arranged inside the chamber 2 and is rotated to transport the base S on which the workpiece W is mounted; a plurality of processing parts PR are arranged along a circumference centered on the rotation axis of the rotating body 3, having The opening ОP communicating with the chamber 2 processes the workpiece W that has been introduced from the opening ОP; and the pusher 500 is directed toward the direction in which the workpiece W is detached from the rotating body 3 and introduced into the processing part PR from the opening ОP The base S applies force. Furthermore, the plurality of processing units PR include a heating unit 200 for heating the workpiece W, a film forming unit 300 for forming a film on the workpiece W, and a cooling unit 400 for cooling the workpiece W, and a holding unit 33 is provided on the rotating body 3 The holding part 33 holds the base S that the rotating body 3 is transporting, and releases the base S by applying a force by the pusher 500. The pusher 500 is provided with a sealing part 520 that holds the workpiece W The processing part PR is introduced, and the opening ОP is sealed.

在本實施方式中,將開口ОP密封的密封部520變成和與工件W一同移動,並在加熱室210或成膜室310中被持續加熱的基座S不同的物體,因此不存在密封部520被持續加熱而變成高溫的情況。另外,基座S不被要求可承受與冷卻部400的內部的壓力差的強度,可選擇厚度與材料,因此可減小熱容量。因此,可在短時間內高效率地進行冷卻部400的工件W的冷卻。因此,不對冷卻處理進行限速,處理量提升。In this embodiment, the sealing part 520 that seals the opening ОP becomes a different object from the susceptor S that moves with the workpiece W and is continuously heated in the heating chamber 210 or the film forming chamber 310, so there is no sealing part 520. When it is heated continuously and becomes high temperature. In addition, the base S is not required to have a strength that can withstand the pressure difference with the inside of the cooling part 400, and the thickness and material can be selected, so the heat capacity can be reduced. Therefore, the workpiece W of the cooling part 400 can be cooled efficiently in a short time. Therefore, the cooling processing speed is not limited, and the processing volume is increased.

密封部520具有對工件W進行冷卻的第二冷卻機構430。因此,可利用冷卻部400進行冷卻,並且利用密封部520的第二冷卻機構430從表面與背面的兩面對工件W進行冷卻,因此可高速地進行冷卻。密封部520並不與工件W一同由旋轉體3搬送,因此能夠以與利用旋轉體3的基座S的搬送機構分離的簡易的結構設置第二冷卻機構430。The sealing part 520 has a second cooling mechanism 430 that cools the workpiece W. Therefore, the cooling part 400 can be used for cooling, and the second cooling mechanism 430 of the sealing part 520 can be used to cool the workpiece W from both the front surface and the back surface, so that the cooling can be performed at a high speed. Since the sealing part 520 is not conveyed by the rotating body 3 together with the work W, the second cooling mechanism 430 can be provided in a simple structure separate from the conveying mechanism using the base S of the rotating body 3.

旋轉體3為圓形的板狀體,在旋轉體3設置有密封部520在與旋轉體3的旋轉平面交叉的方向上穿過的空隙部32,且具有保持部33,所述保持部33在密封部520穿過空隙部32的過程中,在保持基座S的保持狀態與解放基座S的解放狀態中切換。因此,可使已固定在推動器500的密封部520在旋轉體3的開口ОP側與其相反側之間移動,而切換開口ОP的密封與打開、利用保持部33的基座S的保持與解放。即,可機械式地與密封部520的密封及打開動作同步地簡便地進行基座S的保持及解放動作。The rotating body 3 is a circular plate-shaped body. The rotating body 3 is provided with a gap portion 32 through which the sealing portion 520 passes in a direction intersecting the rotation plane of the rotating body 3, and has a holding portion 33. In the process of the sealing portion 520 passing through the gap portion 32, the holding state of the holding base S and the released state of releasing the base S are switched. Therefore, the sealing part 520 fixed to the pusher 500 can be moved between the opening ОP side of the rotating body 3 and the opposite side, and the sealing and opening of the opening ОP can be switched, and the holding and releasing of the base S by the holding part 33 can be switched. . That is, the holding and releasing actions of the base S can be easily performed mechanically in synchronization with the sealing and opening actions of the sealing portion 520.

工件W為陶瓷基板,在加熱部200中,通過加熱來對陶瓷基板進行脫氣處理,成膜部300設有多個,通過多個成膜部300,並通過濺鍍來形成利用不同的材料的多層膜。因此,即便在利用加熱部200的加熱後,通過多個成膜部300來繼續加熱的情況下,也可以通過冷卻部400來高速地冷卻基座S及工件W。The workpiece W is a ceramic substrate. In the heating section 200, the ceramic substrate is degassed by heating. There are multiple film forming sections 300, and the multiple film forming sections 300 are formed by sputtering using different materials.的multilayer film. Therefore, even in the case where heating is continued by the plurality of film forming parts 300 after the heating by the heating part 200, the susceptor S and the workpiece W can be cooled by the cooling part 400 at a high speed.

[變形例] 本實施方式並不限定於所述實施例,也包含如下的變形例。 (1)也可以在基座S,在介於與工件W之間的面配置基座S的熱容量以下的熱容量的傳導構件。藉此,在冷卻部400中,可使工件W的熱容易經由基座S而逃逸。例如,作為基座S及傳導構件,合適的是設為銅等金屬,但並不限定於此。[Modifications] This embodiment is not limited to the above-mentioned examples, and also includes the following modifications. (1) A conductive member having a heat capacity equal to or lower than the heat capacity of the base S may be arranged on the surface between the base S and the workpiece W. Thereby, in the cooling part 400, the heat of the work W can easily escape via the base S. For example, as the base S and the conductive member, it is suitable to use a metal such as copper, but it is not limited to this.

(2)作為處理部PR,也可以一同包含成膜部300與改質部。改質部是如下的處理部PR:使通過使製程氣體電漿化而產生的電子、離子、自由基等活性種衝撞工件W,藉此使工件W的表面改質,而提升膜的密接性。(2) As the processing part PR, the film forming part 300 and the reforming part may be included together. The reforming part is a processing part PR that causes active species such as electrons, ions, and free radicals generated by plasmating the process gas to collide with the workpiece W, thereby reforming the surface of the workpiece W and improving the adhesion of the film .

(3)也可以在加載互鎖室121,設置對經由加載互鎖室121而被從腔室2內搬出的基座S及工件W進行冷卻的冷卻裝置。例如,在與加載互鎖室121對應的密封部520設置與冷卻部400相同的冷卻機構。藉此,可促進基座S及工件W的排出前的冷卻。在此情況下,也可以在到達作為可防止膜在大氣中被氧化的溫度的目標溫度之前停止冷卻室410的冷卻,並在加載互鎖室121中進行剩餘的冷卻。藉此,可將用於使工件W變成目標溫度的冷卻時間分散成冷卻室410的冷卻時間、及加載互鎖室121的冷卻時間。因此,不使工件W長時間停留在冷卻室410,可減少處理限速,處理量提升。例如,在如圖1那樣將搭載有工件W的多個基座S依次投入旋轉體3,並使旋轉體3進行間歇旋轉來搬送至各處理部PR進行處理的情況下,若使工件W長時間停留在一個處理部PR中,則位於其搬送下游的搭載在另一基座S的工件W無法移動至下一個處理部PR,而產生等待處理時間。通過使冷卻時間分散,減少冷卻室410的冷卻時間,而可減少搭載在另一基座S的工件W的等待處理時間,處理量提升。(3) The load lock chamber 121 may be provided with a cooling device that cools the susceptor S and the workpiece W carried out from the chamber 2 via the load lock chamber 121. For example, the sealing part 520 corresponding to the load lock chamber 121 is provided with the same cooling mechanism as the cooling part 400. Thereby, cooling of the susceptor S and the workpiece W before discharge can be promoted. In this case, the cooling of the cooling chamber 410 may be stopped before reaching the target temperature that can prevent the film from being oxidized in the atmosphere, and the remaining cooling may be performed in the load lock chamber 121. Thereby, the cooling time for bringing the workpiece W to the target temperature can be divided into the cooling time of the cooling chamber 410 and the cooling time of the load lock chamber 121. Therefore, the workpiece W does not stay in the cooling chamber 410 for a long time, the processing speed limit can be reduced, and the processing volume can be increased. For example, in the case where a plurality of bases S on which the workpiece W is mounted is sequentially put into the rotating body 3 as shown in FIG. 1, and the rotating body 3 is rotated intermittently to be transported to each processing unit PR for processing, if the workpiece W is made long If the time stays in one processing part PR, the workpiece W mounted on the other base S located downstream of the conveyance cannot be moved to the next processing part PR, resulting in waiting processing time. By dispersing the cooling time and reducing the cooling time of the cooling chamber 410, the waiting time of the workpiece W mounted on the other base S can be reduced, and the processing amount can be increased.

(4)成膜部300的數量並不限定於三個,也可以是兩個以下或四個以上。通過增加成膜部300的數量,可提升成膜率。另外,成膜部300只要是使用靶320的濺鍍裝置即可。但是,在成膜部300、改質部中產生電漿的構成並不限定於特定的種類。(4) The number of film forming parts 300 is not limited to three, and may be two or less or four or more. By increasing the number of film forming parts 300, the film forming rate can be improved. In addition, the film forming section 300 may be a sputtering device using the target 320. However, the configuration for generating plasma in the film forming part 300 and the reforming part is not limited to a specific type.

(5)旋轉體3的空隙部32也可以是形成在圓形的板狀體的貫穿孔。另外,旋轉體3並不限定於旋轉台。也可以是在從旋轉中心呈放射狀地延長的臂保持支撐部或工件W來進行旋轉的旋轉體3。由旋轉體3搬送並同時得到處理的工件W的數量、保持其的保持部33的數量也不限定於所述實施例中所示的數量。保持部33也只要是在密封部520穿過空隙部32的過程中,在保持基座S的保持狀態與解放基座S的解放狀態中切換的構成即可,並不限定於所述實施例。(5) The void portion 32 of the rotating body 3 may be a through hole formed in a circular plate-shaped body. In addition, the rotating body 3 is not limited to a rotating table. The rotating body 3 that rotates while holding the support portion or the workpiece W on an arm extending radially from the center of rotation may also be used. The number of workpieces W conveyed by the rotating body 3 and processed at the same time, and the number of holding parts 33 holding them are not limited to the number shown in the above-mentioned embodiment. The holding portion 33 may be configured to switch between the holding state of the holding base S and the released state of the released base S during the process of the sealing portion 520 passing through the gap portion 32, and it is not limited to the above-mentioned embodiment. .

(6)處理部PR可以位於腔室2的設置面側,也可以位於與其相反側,也可以位於側面側。使工件W在處理部PR中出入的方向也可以從處理部PR的設置面側,也可以從與其相反側,也可以從側面側。當將順從重力之側設為下方,將抗拒重力之側設為上方時,在所述實施例中,將各處理部PR配置在旋轉體3的上方,但也可以將各處理部PR配置在旋轉體3的下方。另外,旋轉體3並不限定於水平,也可以是垂直的配置,也可以是傾斜的配置。進而,成膜裝置1的設置面可以是地面,也可以是頂棚,也可以是側壁面。相對於基座S的工件W的搭載也可以通過機械式的保持、黏接、吸附等來進行。即,所謂工件W搭載在基座S,是指不論基座S為何種角度,均變成可與工件W一同移動的狀態,並不限定於工件W裝載在水平的基座S上的情況。(6) The treatment part PR may be located on the installation surface side of the chamber 2 or on the opposite side thereof, or on the side surface. The direction in which the workpiece W enters and exits the processing portion PR may be from the installation surface side of the processing portion PR, may be from the side opposite thereto, or may be from the side surface side. When the side that obeys gravity is set to the lower side and the side that resists gravity is set to the upper side, in the above-mentioned embodiment, the processing parts PR are arranged above the rotating body 3. However, the processing parts PR may also be arranged at Below the rotating body 3. In addition, the rotating body 3 is not limited to being horizontal, and may be a vertical arrangement or an inclined arrangement. Furthermore, the installation surface of the film forming apparatus 1 may be a floor, a ceiling, or a side wall surface. Mounting of the workpiece W on the base S can also be performed by mechanical holding, bonding, suction, or the like. That is, the mounting of the workpiece W on the base S means that it can move together with the workpiece W regardless of the angle of the base S, and is not limited to the case where the workpiece W is mounted on a horizontal base S.

(7)設置在冷卻室410的壓力感測器或溫度感測器也可以適宜省略。當省略溫度感測器時,在從冷卻開始起經過了事先求出的規定的冷卻時間的時間點,開始冷卻室410的冷卻後的排氣。另外,當省略壓力感測器時,在從排氣開始起經過了事先求出的規定的時間時,停止排氣。(7) The pressure sensor or temperature sensor provided in the cooling chamber 410 may also be omitted as appropriate. When the temperature sensor is omitted, at a time point when the predetermined cooling time determined in advance has elapsed from the start of cooling, the cooled exhaust of the cooling chamber 410 is started. In addition, when the pressure sensor is omitted, when the predetermined time determined in advance has passed from the start of the exhaust, the exhaust is stopped.

(8)在圖7、圖11(A)及圖11(B)中所示的例子中,冷卻氣體導入部422從冷卻室410的與被冷卻的工件W相向的面導入冷卻氣體G,但冷卻氣體G的導入方向並不限定於此。例如,也可以在冷卻室410的側壁設置開口,朝冷卻氣體導入部422的沿著工件W的方嚮導入冷卻氣體G。(8) In the example shown in FIGS. 7, 11(A) and 11(B), the cooling gas introduction part 422 introduces the cooling gas G from the surface of the cooling chamber 410 facing the workpiece W to be cooled, but The introduction direction of the cooling gas G is not limited to this. For example, an opening may be provided in the side wall of the cooling chamber 410, and the cooling gas G may be introduced in the direction along the workpiece W of the cooling gas introduction portion 422.

(9)以上,對本發明的實施方式及各部的變形例進行了說明,但所述實施方式或各部的變形例是作為一例來提示者,並不意圖限定發明的範圍。所述這些新穎的實施方式能夠以其它各種方式來實施,可在不脫離發明的主旨的範圍內進行各種省略、替換、變更。這些實施方式或其變形包含在發明的範圍或主旨中,並且包含在申請專利範圍記載的發明中。(9) As mentioned above, the embodiment of the present invention and the modification of each part have been described, but the embodiment or the modification of each part is presented as an example and is not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or their modifications are included in the scope or spirit of the invention, and are included in the invention described in the scope of patent application.

1:成膜裝置 2:腔室 3:旋轉體 21:收容體 22:蓋體 23:腔室排氣部 31、510:傳動軸 32:空隙部 33:保持部 70:控制裝置 71:機構控制部 72:加熱控制部 73:成膜控制部 74:冷卻控制部 75:記憶部 76:設定部 77:輸入輸出控制部 78:輸入裝置 79:輸出裝置 100:搬入搬出部 110:搬送部 111、333:臂 112:保持體 121:加載互鎖室 121a、121b、210a、310a、410a、OP:開口 200:加熱部 210:加熱室 220:加熱器 300、300A~300C:成膜部 310:成膜室 320:靶 331:基台 332:轉換部 332a:輥 332b:軸 333a:握持部 333b:抵接面 333c:保持面 334:施力構件 334a、334b:板材 400:冷卻部 410:冷卻室 420:第一冷卻機構 421:冷卻器 422:冷卻氣體導入部 423、431:冷卻液循環管道 424:冷卻室排氣部 430:第二冷卻機構 432:冷卻液供給部 500、500A~500F:推動器 520:密封部 521:載置台 521a:載置面 522:密封體 522a:密封面 522b:密封材料 523:突出部 523a:傾斜面 523b:外周面 G:冷卻氣體 PR:處理部 S:基座 TR:搬送機構 Sa:收容部 Sb:腳部 W:工件1: Film forming device 2: chamber 3: Rotating body 21: Containment 22: Lid 23: Chamber exhaust 31, 510: drive shaft 32: Gap 33: holding part 70: control device 71: Institutional Control Department 72: Heating Control Department 73: Film Formation Control Department 74: Cooling Control Department 75: Memory Department 76: Setting section 77: Input and output control unit 78: input device 79: output device 100: Move in and out department 110: Transport Department 111, 333: Arm 112: keep body 121: Load Interlock Room 121a, 121b, 210a, 310a, 410a, OP: opening 200: heating section 210: heating chamber 220: heater 300, 300A~300C: Film forming part 310: Film forming chamber 320: target 331: Abutment 332: Conversion Department 332a: Roll 332b: axis 333a: Grip 333b: abutment surface 333c: keep noodles 334: force component 334a, 334b: plates 400: Cooling part 410: Cooling Room 420: The first cooling mechanism 421: Cooler 422: Cooling gas introduction part 423, 431: Coolant circulation pipeline 424: Cooling Chamber Exhaust 430: second cooling mechanism 432: Coolant Supply 500, 500A~500F: Pusher 520: Sealing part 521: Placing Table 521a: Mounting surface 522: Seal 522a: sealing surface 522b: Sealing material 523: protruding part 523a: Inclined surface 523b: outer peripheral surface G: Cooling gas PR: Processing Department S: Pedestal TR: transfer mechanism Sa: Containment Department Sb: feet W: Workpiece

圖1是表示實施方式的經簡化的透視平面圖。 圖2(A)~圖2(B)是表示利用圖1的密封部的開口的密封時(圖2(A))、打開時(圖2(B))的A-A線剖面圖。 圖3(A)~圖3(C)是表示實施方式中所使用的基座的平面圖(圖3(A))、側面圖(圖3(B))、底面圖(圖3(C))。 圖4是表示實施方式的旋轉體的平面圖。 圖5(A)~圖5(D)是表示保持部的基座保持狀態的平面圖(圖5(A))、正面圖(圖5(B)),表示基座解放狀態的平面圖(圖5(C))、正面圖(圖5(D))。 圖6是表示實施方式的密封部的立體圖。 圖7是表示實施方式的冷卻部的開口的打開時的部分剖面圖。 圖8是表示實施方式的冷卻部的密封部的動作途中的部分剖面圖。 圖9是表示實施方式的冷卻部的開口的密封時的部分剖面圖。 圖10(A)~圖10(B)是表示利用圖1的密封部的開口的密封時(圖10(A))、打開時(圖10(B))的B-B線剖面圖。 圖11(A)~圖11(B)是表示利用圖1的密封部的開口的密封時(圖11(A))、打開時(圖11(B))的C-C線剖面圖。 圖12是表示實施方式的控制裝置的框圖。Fig. 1 is a simplified perspective plan view showing the embodiment. 2(A) to 2(B) are cross-sectional views taken along the line A-A showing the time of sealing (FIG. 2(A)) and the time of opening (FIG. 2(B)) with the opening of the sealing portion of FIG. 1. 3(A) to 3(C) are a plan view (FIG. 3(A)), a side view (FIG. 3(B)), and a bottom view (FIG. 3(C)) of the base used in the embodiment . Fig. 4 is a plan view showing the rotating body of the embodiment. Figures 5(A) to 5(D) are a plan view (Figure 5(A)) and a front view (Figure 5(B)) showing the holding state of the base of the holding portion, and a plan view showing the released state of the base (Figure 5) (C)), the front view (Figure 5 (D)). Fig. 6 is a perspective view showing a sealing portion of the embodiment. Fig. 7 is a partial cross-sectional view showing the opening of the cooling unit according to the embodiment at the time of opening. Fig. 8 is a partial cross-sectional view showing the operation of the sealing part of the cooling part according to the embodiment. Fig. 9 is a partial cross-sectional view showing the sealing of the opening of the cooling unit according to the embodiment. 10(A) to 10(B) are cross-sectional views taken along the line B-B when sealing (FIG. 10(A)) and opening (FIG. 10(B)) with the opening of the sealing portion of FIG. 1. Figs. 11(A) to 11(B) are cross-sectional views taken along the line C-C when sealing (Fig. 11(A)) and opening (Fig. 11(B)) using the opening of the sealing portion of Fig. 1. Fig. 12 is a block diagram showing the control device of the embodiment.

2:腔室 2: chamber

3:旋轉體 3: Rotating body

21:收容體 21: Containment

22:蓋體 22: Lid

510:傳動軸 510: drive shaft

33:保持部 33: holding part

333:臂 333: Arm

410a、OP:開口 410a, OP: opening

332:轉換部 332: Conversion Department

332a:輥 332a: Roll

400:冷卻部 400: Cooling part

410:冷卻室 410: Cooling Room

420:第一冷卻機構 420: The first cooling mechanism

421:冷卻器 421: Cooler

422:冷卻氣體導入部 422: Cooling gas introduction part

423、431:冷卻液循環管道 423, 431: Coolant circulation pipeline

424:冷卻室排氣部 424: Cooling Chamber Exhaust

430:第二冷卻機構 430: second cooling mechanism

432:冷卻液供給部 432: Coolant Supply

500、500F:推動器 500, 500F: Pusher

520:密封部 520: Sealing part

522:密封體 522: Seal

522a:密封面 522a: sealing surface

522b:密封材料 522b: Sealing material

523:突出部 523: protruding part

G:冷卻氣體 G: Cooling gas

PR:處理部 PR: Processing Department

Sb:腳部 Sb: feet

Claims (6)

一種成膜裝置,其特徵在於,包括:腔室,能夠通過排氣來使內部變成真空;旋轉體,配置在所述腔室的內部,通過旋轉來搬送搭載有工件的基座;多個處理部,沿著將所述旋轉體的旋轉軸作為中心的圓周來配置,具有與所述腔室內連通的開口,對已被從所述開口導入的所述工件進行處理;以及推動器,朝所述工件從所述旋轉體脫離,並被從所述開口導入所述處理部內的方向對所述基座施力;所述多個處理部包含對所述工件進行加熱的加熱部、對所述工件進行成膜的成膜部、及具有冷卻機構的冷卻部,所述冷卻機構對所述工件進行冷卻,在所述旋轉體設置有保持部,所述保持部保持所述旋轉體正在搬送的所述基座,並通過由所述推動器施力而解放所述基座,且在所述推動器設置有密封部,所述密封部將從所述旋轉體脫離且搭載在所述基座上的所述工件導入所述處理部中,並且將所述開口密封。 A film forming apparatus, characterized by comprising: a chamber capable of turning the inside into a vacuum by exhausting; a rotating body arranged in the chamber and rotating to transport a susceptor on which a workpiece is mounted; and multiple processes Part, arranged along the circumference with the rotation axis of the rotating body as the center, having an opening communicating with the chamber, and processing the workpiece that has been introduced from the opening; and a pusher facing the The workpiece is separated from the rotating body and is introduced into the processing portion from the opening to apply force to the susceptor; the plurality of processing portions include a heating portion that heats the workpiece, and A film forming part where a workpiece is formed, and a cooling part having a cooling mechanism for cooling the workpiece, and a holding part is provided on the rotating body, and the holding part holds the rotating body while it is being transported. The base is released by applying a force by the pusher, and a sealing portion is provided on the pusher, and the sealing portion is detached from the rotating body and mounted on the base The above workpiece is introduced into the processing part, and the opening is sealed. 如申請專利範圍第1項所述的成膜裝置,其中,所述密封部具有對所述工件進行冷卻的冷卻機構。 The film forming apparatus according to claim 1, wherein the sealing portion has a cooling mechanism for cooling the workpiece. 如申請專利範圍第1項或第2項所述的成膜裝置,其中,所述旋轉體為圓形的板狀體, 在所述旋轉體設置有所述密封部在與所述旋轉體的旋轉平面交叉的方向上穿過的空隙部,且在所述密封部穿過所述空隙部的過程中,所述保持部在保持所述基座的保持狀態與解放所述基座的解放狀態中切換。 The film forming apparatus described in item 1 or item 2 of the scope of patent application, wherein the rotating body is a circular plate-shaped body, The rotating body is provided with a gap portion through which the sealing portion passes in a direction intersecting the rotation plane of the rotating body, and during the process of the sealing portion passing through the gap portion, the holding portion Switching between a holding state where the base is maintained and a released state where the base is released. 如申請專利範圍第1項或第2項所述的成膜裝置,其中,在所述基座中,在介於與所述工件之間的面配置有所述基座的熱容量以下的熱容量的傳導構件。 The film forming apparatus according to the first or second claim of the patent application, wherein, in the susceptor, a heat capacity equal to or less than the heat capacity of the susceptor is arranged on the surface between the susceptor and the workpiece. Conduction member. 如申請專利範圍第1項或第2項所述的成膜裝置,其中,包括加載互鎖室,所述加載互鎖室能夠在維持所述腔室內的真空的狀態下,進行所述基座及所述工件的搬入搬出,且在所述加載互鎖室,設置有對經由所述加載互鎖室而被從所述腔室內搬出的所述基座及所述工件進行冷卻的冷卻裝置。 The film forming apparatus according to the first or second item of the scope of patent application, which includes a load-lock chamber, and the load-lock chamber can perform the susceptor while maintaining the vacuum in the chamber. And the loading and unloading of the workpiece, and the load lock chamber is provided with a cooling device that cools the base and the workpiece that are carried out from the chamber through the load lock chamber. 如申請專利範圍第1項或第2項所述的成膜裝置,其中,所述工件為陶瓷基板,在所述加熱部中,通過加熱來對所述陶瓷基板進行脫氣處理,所述成膜部設有多個,通過多個所述成膜部,並通過濺鍍來形成利用不同的材料的多層膜。 The film forming apparatus according to claim 1 or 2, wherein the workpiece is a ceramic substrate, and in the heating section, the ceramic substrate is degassed by heating, and the forming A plurality of film portions are provided, and a multi-layer film using different materials is formed by sputtering through a plurality of the film forming portions.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200608387A (en) * 2004-05-17 2006-03-01 Shibaura Mechatronics Corp Vacuum processing apparatus
TW200613577A (en) * 2004-05-17 2006-05-01 Shibaura Mechatronics Corp Vacuum treatment device and method for producing optical disk
TW201135849A (en) * 2009-11-06 2011-10-16 Semiconductor Energy Lab Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
TW201742158A (en) * 2009-11-20 2017-12-01 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0184428U (en) * 1987-11-27 1989-06-05
JPH0790582A (en) * 1993-06-22 1995-04-04 Nissin Electric Co Ltd Substrate holder
JP3661950B2 (en) * 1994-09-29 2005-06-22 芝浦メカトロニクス株式会社 Semiconductor manufacturing equipment
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
TW200532043A (en) * 2004-02-10 2005-10-01 Ulvac Inc Thin film forming apparatus
KR100631822B1 (en) * 2004-09-14 2006-10-09 한국표준과학연구원 Substrate Cooling Device and Method of Plasma Process Chamber
EP2320454A1 (en) * 2009-11-05 2011-05-11 S.O.I.Tec Silicon on Insulator Technologies Substrate holder and clipping device
JP5392069B2 (en) 2009-12-25 2014-01-22 東京エレクトロン株式会社 Deposition equipment
JP5620096B2 (en) * 2009-12-29 2014-11-05 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200608387A (en) * 2004-05-17 2006-03-01 Shibaura Mechatronics Corp Vacuum processing apparatus
TW200613577A (en) * 2004-05-17 2006-05-01 Shibaura Mechatronics Corp Vacuum treatment device and method for producing optical disk
TW201135849A (en) * 2009-11-06 2011-10-16 Semiconductor Energy Lab Method for manufacturing semiconductor element and semiconductor device, and deposition apparatus
TW201742158A (en) * 2009-11-20 2017-12-01 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device

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