TWI719762B - Film forming device - Google Patents
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- TWI719762B TWI719762B TW108146075A TW108146075A TWI719762B TW I719762 B TWI719762 B TW I719762B TW 108146075 A TW108146075 A TW 108146075A TW 108146075 A TW108146075 A TW 108146075A TW I719762 B TWI719762 B TW I719762B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
Abstract
本發明提供一種工件的冷卻效率優異的成膜裝置。所述成膜裝置具有:搬入搬出部(100),使工件(W)在腔室(2)的內部出入;旋轉體(3),配置在腔室(2)的內部,通過旋轉來搬送搭載有工件(W)的基座(S);多個處理部(PR),沿著將旋轉體(3)的旋轉軸作為中心的圓周來配置,具有與腔室(2)內連通的開口(ОP),對已被從開口(ОP)導入的工件(W)進行處理;以及推動器(500),朝工件(W)從旋轉體(3)脫離,並被從開口(ОP)導入處理部(PR)內的方向對基座(S)施力;多個處理部(PR)包含對工件(W)進行加熱的加熱部(200)、對工件(W)進行成膜的成膜部(300)、及對工件(W)進行冷卻的冷卻部(400),在旋轉體(3)設置有保持部(33),所述保持部(33)保持旋轉體(3)正在搬送的基座(S),並通過由推動器(500)施力而放開基座(S),在推動器(500)設置有密封部(520),所述密封部(520)將工件(W)導入處理部(PR),並且將開口(ОP)密封。The present invention provides a film forming device with excellent cooling efficiency of a workpiece. The film forming apparatus has: a carry-in and carry-out part (100) that allows the workpiece (W) to go in and out of the chamber (2); a rotating body (3), which is arranged inside the chamber (2), and is transported and mounted by rotating There is a base (S) for the workpiece (W); a plurality of processing parts (PR) are arranged along the circumference with the rotation axis of the rotating body (3) as the center, and have an opening ( ОP) to process the workpiece (W) that has been introduced from the opening (ОP); and the pusher (500) to disengage from the rotating body (3) toward the workpiece (W) and be introduced into the processing section from the opening (ОP) The direction in (PR) applies force to the susceptor (S); the plurality of processing sections (PR) include a heating section (200) for heating the workpiece (W), and a film forming section ( 300), and a cooling part (400) for cooling the workpiece (W). The rotating body (3) is provided with a holding part (33), and the holding part (33) holds the base on which the rotating body (3) is being transported. (S), and the base (S) is released by applying force by the pusher (500). The pusher (500) is provided with a sealing part (520), and the sealing part (520) introduces the workpiece (W) Treat the part (PR) and seal the opening (ОP).
Description
本發明是有關於一種成膜裝置。The present invention relates to a film forming device.
作為在基板等工件的表面進行成膜的裝置,廣泛地使用利用濺鍍的成膜裝置。濺鍍是如下的技術:利用通過使已導入腔室內的氣體電漿化而產生的離子衝撞作為成膜材料的靶的平面,藉此成膜材料飛散而附著在工件。As an apparatus for forming a film on the surface of a workpiece such as a substrate, a film forming apparatus by sputtering is widely used. Sputtering is a technique in which ions generated by plasmaizing gas introduced into a chamber collide with the plane of a target as a film-forming material, whereby the film-forming material scatters and adheres to the workpiece.
有時在工件的表面進行成膜之前,事先進行排除工件中所含有的水分或大氣的脫氣處理。這在例如將容易含有大氣或水分的陶瓷基板用作工件的情況,另外,在將如銅、鈦、鎢等的金屬膜那樣容易氧化的材料用作工件的情況下,對於抗氧化有效。In some cases, a degassing treatment to remove moisture or air contained in the workpiece is carried out before film formation on the surface of the workpiece. This is effective for oxidation resistance when, for example, a ceramic substrate that easily contains air or moisture is used as a workpiece, and when a material that is easily oxidized, such as a metal film of copper, titanium, and tungsten, is used as a workpiece.
脫氣處理通過使工件的溫度升溫至300度左右為止來進行。但是,脫氣處理後,例如若在利用多個成膜材料使包含多個層的多層膜成膜的期間內,溫度條件變化,則引起多層膜的內部應力的變動。因此,各層的成膜必須盡可能以相同的溫度條件來進行,且脫氣處理後,使溫度條件不變。The degassing treatment is performed by raising the temperature of the workpiece to approximately 300 degrees. However, after the degassing treatment, if, for example, the temperature condition changes during the formation of a multilayer film including a plurality of layers using a plurality of film forming materials, the internal stress of the multilayer film will fluctuate. Therefore, the film formation of each layer must be performed under the same temperature conditions as much as possible, and the temperature conditions should be kept unchanged after the degassing treatment.
工件經由承接板而載置在基座(susceptor)上來搬送,所述基座載置在進行間歇旋轉的旋轉臺上。即,在進行間歇旋轉的旋轉台的停止位置,配置有進行脫氣處理的加熱室、進行利用各成膜材料的成膜的成膜室。而且,工件通過旋轉台的間歇旋轉而來到加熱室進行脫氣處理後,在成膜室中依次進行成膜處理。The workpiece is transported by being placed on a susceptor via a receiving plate, and the susceptor is placed on a rotating table that rotates intermittently. That is, at the stop position of the turntable that performs intermittent rotation, a heating chamber for performing degassing treatment and a film forming chamber for performing film formation using each film forming material are arranged. In addition, after the workpiece is brought to the heating chamber by the intermittent rotation of the turntable and subjected to degassing treatment, the film forming process is sequentially performed in the film forming chamber.
這些加熱室、成膜室等處理室設置在真空腔室內,處理室間在真空中被搬送。因此,在脫氣處理時已升溫至300℃左右為止的工件與基座未被冷卻,保持300℃左右。於是,若在成膜處理結束後,直接朝大氣空間中搬出,則已在高溫的工件上成膜的膜會氧化。因此,必須在朝大氣中搬送之前進行工件的冷卻。例如,使已升溫至300℃左右為止的工件降溫至作為為了朝大氣空間中搬出而需要的溫度的60℃左右為止。These processing chambers, such as a heating chamber and a film forming chamber, are installed in a vacuum chamber, and the processing chambers are transported in a vacuum. Therefore, the workpiece and the susceptor that have been heated to about 300°C during the degassing process are not cooled, and are maintained at about 300°C. Therefore, if the film is directly carried out into the air space after the film forming process is completed, the film formed on the high-temperature workpiece will be oxidized. Therefore, the workpiece must be cooled before being transported into the atmosphere. For example, the temperature of the workpiece that has been raised to about 300°C is lowered to about 60°C, which is the temperature required for carrying it out into the air space.
作為對工件進行冷卻的冷卻機構,有如下的機構:將工件收容在冷卻室內並進行密封,使冷卻介質在冷卻室內流通,藉此進行冷卻(參照專利文獻1)。在此種機構中,將基座載置在旋轉臺上來搬送,在與處理室對應的停止位置,利用具有推動器(pusher)的上推機構將基座向上推,而通過基座來將處理室密封。As a cooling mechanism for cooling the workpiece, there is a mechanism in which the workpiece is housed in a cooling chamber and sealed, and a cooling medium is circulated in the cooling chamber to perform cooling (see Patent Document 1). In this mechanism, the susceptor is placed on a rotating table for transportation, and at a stop position corresponding to the processing chamber, the susceptor is pushed up by a pusher mechanism with a pusher, and the processing is carried out by the susceptor. The chamber is sealed.
在包括冷卻機構的冷卻室中,也在上蓋設置冷卻介質進行循環的冷卻板,使通過推動器而已與基座一同被向上推的工件與冷卻板相向,將冷卻介質導入已由基座密封的冷卻室內,藉此進行基板的冷卻。 [現有技術文獻]In the cooling chamber including the cooling mechanism, the upper cover is also provided with a cooling plate for circulating the cooling medium, so that the workpiece that has been pushed up together with the base by the pusher faces the cooling plate, and the cooling medium is introduced into the sealed by the base. In the cooling chamber, the substrate is cooled by this. [Prior Art Literature]
[專利文獻] [專利文獻1] 日本專利第4653418號公報[Patent Literature] [Patent Document 1] Japanese Patent No. 4653418
[發明所要解決的問題] 此處,在使已升溫至300℃左右為止的基板降溫至為了朝大氣中搬出而需要的60℃左右為止時,需要進行約240℃這一大幅度的降溫的冷卻。但是,例如,當為了以每一節拍240秒左右進行一連串的處理而進行連續搬送時,若冷卻時間比其長,則冷卻處理變成限速的處理,處理量受到影響。[The problem to be solved by the invention] Here, when the temperature of the substrate that has been raised to about 300°C is lowered to about 60°C, which is required to be carried out into the atmosphere, it is necessary to perform a drastically lowered cooling of about 240°C. However, for example, when continuous conveyance is performed in order to perform a series of processing at approximately 240 seconds per tick, if the cooling time is longer than this, the cooling processing becomes speed-limited processing, and the processing amount is affected.
但是,由於冷卻在真空中進行,因此僅利用所述冷卻板的冷卻並不足夠,為了提高冷卻效率,必須對冷卻室內供給冷卻氣體。若導入冷卻氣體,則冷卻室內的壓力變高。However, since cooling is performed in a vacuum, cooling using only the cooling plate is not sufficient. In order to improve cooling efficiency, cooling gas must be supplied to the cooling chamber. If the cooling gas is introduced, the pressure in the cooling chamber becomes higher.
另一方面,設置有旋轉台的腔室保持真空。於是,將冷卻室與腔室的空間隔開的基座需要可承受腔室與冷卻室的壓力差的程度的強度。例如,基座由利用銅等金屬的厚板形成。因此,基座的熱容量變大。此種基座追隨工件而被持續加熱,因此當在冷卻室中對工件進行冷卻時,也必須對熱容量大的基座進行冷卻,冷卻效率不佳。On the other hand, the chamber provided with the rotating table maintains a vacuum. Therefore, the base that separates the cooling chamber from the space of the chamber needs to be strong enough to withstand the pressure difference between the chamber and the cooling chamber. For example, the base is formed of a thick plate made of metal such as copper. Therefore, the heat capacity of the susceptor becomes larger. Such a susceptor is continuously heated following the workpiece. Therefore, when the workpiece is cooled in the cooling chamber, the susceptor with a large heat capacity must also be cooled, and the cooling efficiency is not good.
本發明是為了解決如上所述的現有技術的問題點而提出者,其目的在於提供一種工件的冷卻效率優異的成膜裝置。 [解決問題的技術手段]The present invention was proposed in order to solve the problems of the prior art as described above, and its object is to provide a film forming apparatus with excellent cooling efficiency of a workpiece. [Technical means to solve the problem]
為了達成所述目的,實施方式的成膜裝置包括:腔室,可通過排氣來使內部變成真空;旋轉體,配置在所述腔室的內部,通過旋轉來搬送搭載有所述工件的基座;多個處理部,沿著將所述旋轉體的旋轉軸作為中心的圓周來配置,具有與所述腔室內連通的開口,對已被從所述開口導入的所述工件進行處理;以及推動器,朝所述工件從所述旋轉體脫離,並被從所述開口導入所述處理部內的方向對所述基座施力;所述多個處理部包含對所述工件進行加熱的加熱部、對所述工件進行成膜的成膜部、及對所述工件進行冷卻的冷卻部,在所述旋轉體設置有保持部,所述保持部保持所述旋轉體正在搬送的所述基座,並通過由所述推動器施力而解放所述基座,且在所述推動器設置有密封部,所述密封部將所述工件導入所述處理部,並且將所述開口密封。 [發明的效果]In order to achieve the above-mentioned object, the film forming apparatus of the embodiment includes: a chamber, which can be exhausted to make the inside a vacuum; a rotating body, which is arranged inside the chamber, and rotates to transport the substrate on which the workpiece is mounted. A plurality of processing parts, arranged along the circumference with the rotation axis of the rotating body as the center, having an opening communicating with the chamber, and processing the workpiece that has been introduced from the opening; and A pusher that applies force to the susceptor in a direction in which the workpiece is separated from the rotating body and introduced into the processing part from the opening; the plurality of processing parts include heating for heating the workpiece Section, a film forming section for forming a film on the work, and a cooling section for cooling the work, a holding section is provided on the rotating body, and the holding section holds the base that is being transported by the rotating body. The base is released by applying force by the pusher, and a sealing part is provided on the pusher, and the sealing part guides the workpiece into the processing part and seals the opening. [Effects of the invention]
根據本發明,可提供一種工件的冷卻效率優異的成膜裝置。According to the present invention, it is possible to provide a film forming apparatus excellent in cooling efficiency of a workpiece.
參照圖式對本發明的實施方式(以下,稱為本實施方式)進行具體說明。
[概要]
如圖1的平面圖以及圖2(A)及圖2(B)(圖1的A-A線剖面圖)所示,本實施方式的成膜裝置1是利用電漿對各個工件W進行成膜的裝置。成膜裝置1具有腔室2,且具有配置在所述腔室2的內部,搬送已搭載在基座S上的工件W的旋轉體3。在腔室2設置有多個處理部PR,所述多個處理部PR沿著將旋轉體3的旋轉軸作為中心的圓周來配置,具有與腔室2內連通的開口ОP,對已被從開口ОP導入的工件W進行處理。多個處理部PR包含:對工件W進行加熱的加熱部200,對工件W進行成膜的成膜部300A、成膜部300B、成膜部300C,及對工件W進行冷卻的冷卻部400。An embodiment of the present invention (hereinafter referred to as this embodiment) will be described in detail with reference to the drawings.
[summary]
As shown in the plan view of Fig. 1 and Figs. 2(A) and 2(B) (cross-sectional view taken along line AA in Fig. 1), the
另外,在腔室2設置有推動器500,所述推動器500朝工件W經由開口ОP而被導入處理部PR的方向對基座S施力。在旋轉體3設置有保持部33,所述保持部33保持旋轉體3正在搬送的基座S,並通過由推動器500施力而放開基座S。在推動器500設置有密封部520,所述密封部520將工件W收容在各處理部PR,並且將開口ОP密封。即,不通過基座S來將各處理部PR密封,而通過與推動器500一同移動的密封部520來將各處理部PR氣密地密封。In addition, the
[工件]
在本實施方式中,作為成膜對象即工件W的例子,使用平板狀的陶瓷基板。成膜裝置1通過成膜來將包含半導體、配線的電路形成在陶瓷基板上。但是,工件W的種類、形狀及材料並不限定於特定者。例如,作為工件W,也可以使用在中心具有凹部或凸部的彎曲的基板。另外,也可以將包含金屬、碳等導電性材料者,包含玻璃或橡膠等絕緣物者,包含矽等半導體者用作工件W。[Workpiece]
In this embodiment, a flat ceramic substrate is used as an example of the workpiece W that is the target of film formation. The
[基座]
基座S是搭載工件W,通過旋轉體3來搬送的構件。如圖3(A)的平面圖、圖3(B)的側面圖、圖3(C)的底面圖所示,本實施方式的基座S是圓形的薄板。在基座S的表面形成收容部Sa,在收容部Sa並排搭載多個工件W。收容部Sa是可將多個工件W不重疊地定位的凹部。搭載在基座S的工件W的數量是在各成膜部300中可同時進行成膜的數量。在本實施方式中,收容部Sa能夠以三行三列來載置工件W,因此可同時對合計九片工件W進行成膜。但是,所述數量並不限定於特定的數量。在基座S的背面形成有呈環狀地突出的腳部Sb。另外,基座S不具有可承受經密封的處理部PR內與腔室2內的氣壓差的強度。[Base]
The base S is a member that mounts the workpiece W and is transported by the
[腔室]
如圖1以及圖2(A)及圖2(B)所示,腔室2是可使內部變成真空的容器。本實施方式的腔室2為長方體形狀,設置面側變成箱形的收容體21,相反側變成將收容體21的開口密封的平板狀的蓋體22。在腔室2設置有腔室排氣部23。本實施方式的腔室排氣部23具有與形成在收容體21的開口連接的配管。腔室排氣部23包含未圖示的氣壓回路來構成,可進行利用排氣處理的腔室2內的減壓。[Chamber]
As shown in FIGS. 1 and 2(A) and 2(B), the
[旋轉體]
如圖4所示,旋轉體3是保持搭載有工件W的基座S,每次間歇旋轉規定的角度的旋轉台。本實施方式的旋轉體3為圓形的板狀體。旋轉體3通過未圖示的驅動源,以傳動軸31為中心進行間歇旋轉(參照圖2(A)及圖2(B))。在旋轉體3設置有密封部520在與旋轉平面交叉的方向上穿過的空隙部32。空隙部32是將旋轉體3的邊緣部在圓周等配位置上切割成部分圓形狀的部分。如圖1所示,空隙部32對應於多個處理部PR,即搬入搬出部100、加熱部200、成膜部300A、成膜部300B、成膜部300C、冷卻部400,以60°間隔設置有六個。空隙部32的內緣的大小以密封部520可穿過的方式形成。例如,與旋轉平面平行的部分圓的直徑比密封部520的直徑大。[Rotating body]
As shown in FIG. 4, the
[保持部]
如圖5(A)至圖5(D)所示,在密封部520穿過空隙部32的過程中,保持部33在保持基座S的保持狀態與解放基座S的解放狀態中切換。一對保持部33配置在空隙部32的與搬送方向相向的位置。保持部33具有基台331、轉換部332、臂333、施力構件334。[Holding Department]
As shown in FIGS. 5(A) to 5(D), during the process of the sealing
基台331是安裝在空隙部32的內緣的板狀的構件。轉換部332是可轉動地安裝在基台331的一對構件,將密封部520的動作轉換成與旋轉體3的旋轉平面平行的方向的旋轉。一對轉換部332並設在與旋轉體3的旋轉方向正交的方向。在轉換部332設置有輥332a,所述輥332a由設置在密封部520的後述的突出部523朝從基座S的邊緣部分離的方向施力。一對轉換部332的輥332a被突出部523施力,藉此將軸332b作為轉動軸,使各個轉換部332朝相反的方向轉動。The
臂333是一對細長的板,一端固定在轉換部332。臂333的另一端朝基座S的邊緣部延長。在臂333的另一端設置有握持部333a,所述握持部333a通過接觸基座S的邊緣部來握持基座S,且通過從基座S的邊緣部分離來放開基座S。握持部333a具有在已握持基座S時基座S的端面進行抵接的抵接面333b、及用於接觸基座S的背面來將基座S載置在臂333的保持面333c。一對臂333設置為可與轉換部332一同在握持部333a握持基座S的邊緣部的保持位置、與握持部333a放開基座S的退避位置之間轉動。握持部333a位於保持位置的狀態為保持狀態,握持部333a位於退避位置的狀態為解放狀態。The
施力構件334是朝握持部333a接觸基座S的邊緣部的方向對轉換部332施力的構件。可將施力構件334設為設置在基台331與轉換部332之間的彈簧。例如,在本實施方式中,作為施力構件334,使用拉伸螺旋彈簧。施力構件334架設在板材334a與板材334b之間,所述板材334a固定在基台331,所述板材334b從基台331浮動並固定在轉換部332。The urging
一對臂333通過施力構件334所施加的力而保持在握持部333a握持基座S的邊緣部的保持位置。在對應於處理部PR的各停止位置上,輥332a由突出部523施力,臂333與轉換部332一同轉動,藉此握持部333a移動至放開基座S的退避位置。若突出部523對於輥332a的施力被解除,則臂333通過施力構件334所施加的力,回到握持部333a握持基座S的邊緣部的保持位置。當臂333位於退避位置時,密封部520可穿過。即,位於退避位置的臂333的握持部333a變成接觸直徑比包含突出部523的密封部520的最大徑大的假想圓的位置。The pair of
[推動器]
如圖2(A)及圖2(B)、圖9以及圖10(A)及圖10(B)(圖1的B-B線剖面圖)所示,對應於搬入搬出部100、加熱部200、成膜部300A、成膜部300B、成膜部300C、冷卻部400,分別設置有推動器500A~推動器500F。以下,當不對推動器500A~推動器500F進行區分時,作為推動器500進行說明。[Pusher]
As shown in Figure 2 (A) and Figure 2 (B), Figure 9 and Figure 10 (A) and Figure 10 (B) (the BB line cross-sectional view of Figure 1), corresponding to the loading and
推動器500具有傳動軸510、密封部520。如圖2(A)及圖2(B)所示,傳動軸510是圓柱形狀的構件,通過未圖示的驅動源而沿著軸進行移動。作為驅動源,例如可使用氣缸或馬達等。The
密封部520是設置在傳動軸510的前端,與開口OP接觸/分離的構件。如圖6所示,密封部520是與傳動軸510同軸的圓柱形狀的構件。密封部520具有載置台521、密封體522及突出部523。載置台521是設置在面向旋轉體3之側,朝開口OP側對基座S施力的圓柱形狀的部分。載置台521的面向基座S的面是載置面521a,所述載置面521a具有與腳部Sb的內徑相同或略小的直徑,以嵌入基座S的腳部Sb的內側。密封體522是由傳動軸510同軸地支撐,比載置台521擴徑的圓柱形狀的部分。密封體522的面向旋轉體3的面變成呈環狀地形成在載置台521的周圍的密封面522a。在密封面522a設置有O型圈等密封材料522b。The sealing
如圖9所示,密封體522的密封面522a接觸開口ОP的端部,藉此將各處理部PR密封。載置台521為了載置基座S並被收容在處理部PR內,而具有比開口ОP小的直徑。密封體522的密封面522a為了穿過空隙部32,直徑比空隙部32小,但為了將開口ОP密封,具有比開口ОP大的直徑。As shown in FIG. 9, the sealing
在本實施方式中,突出部523是從密封體522的外周膨出,在傳動軸510的軸方向上延長的長方體形狀的部分。突出部523的密封面522a側的端面變成傾斜面523a。傾斜面523a是以隨著從密封體522的外周朝向外側,突出部523的軸方向的長度變短的方式傾斜的平坦面。突出部523的外周面523b是與傾斜面523a連續,在軸方向上延長的平坦面。如圖5(A)至圖5(D)所示,所述傾斜面523a及外周面523b伴隨密封部520的移動而與保持部33的輥332a接觸/分離,使臂333轉動。因此,構成將傾斜面523a及外周面523b作為主動凸輪,將輥332a作為從動凸輪的凸輪機構。In this embodiment, the protruding
如圖7及圖8所示,若密封部520朝開口OP移動,傾斜面523a對輥332a施力,則如上所述,臂333朝退避位置進行轉動,因此基座S被放開。另外,載置台521的載置面521a進入基座S的腳部Sb的內側。若密封部520穿過空隙部32,則如圖9所示,密封面522a經由密封材料522b而接觸開口ОP的端部並進行密封。即,密封部520伴隨推動器500的移動,使處理部PR的開口OP開閉。另外,圖7~圖11(B)的保持部33雖然省略施力構件等一部分的構件來圖示,但具有與圖5(A)至圖5(D)相同的構成。As shown in FIGS. 7 and 8, when the sealing
推動器500A~推動器500F的密封部520分別將搬入搬出部100、加熱部200、成膜部300A~成膜部300C及冷卻部400的各室的開口OP密封。此處,構成在後述的搬入搬出部100的加載互鎖(load-lock)室121與真空的腔室2內及外部的大氣壓的壓力差變大。另外,構成冷卻部400的冷卻室410在冷卻氣體導入時變成大致接近大氣壓的1000 Pa~未滿大氣壓的壓力,與真空的腔室2內的壓力差變大。因此,密封部520變成可承受此種壓力差的強度。The sealing
[搬入搬出部]
如圖2(A)及圖2(B)所示,在維持腔室2的內部的真空的狀態下,搬入搬出部100經由搬送部110、加載互鎖室121而從外部朝腔室2的內部搬入未處理的工件W,並朝腔室2的外部搬出處理完的工件W。[Move in and out department]
As shown in Figures 2(A) and 2(B), while maintaining the vacuum inside the
如圖1以及圖2(A)及圖2(B)所示,搬送部110從前步驟至後步驟,從搬送搭載有工件W的基座S的輸送機等搬送機構TR拾取未處理的工件W,並交付至後述的加載互鎖室121。另外,搬送部110從加載互鎖室121接收處理完的工件W,並交付至搬送機構TR。As shown in FIGS. 1 and 2(A) and 2(B), the conveying
搬送部110具有臂111、保持體112。臂111是在搬送機構TR與腔室2之間,設置在與旋轉體3的平面平行的方向上的長尺寸的構件。臂111設置為通過未圖示的驅動機構,能夠以與旋轉體3的旋轉軸平行的軸為中心間歇地每次轉動180°、且可沿著所述軸移動。The conveying
保持體112是設置在臂111的兩端,保持工件W的構件。保持體112利用真空卡盤、靜電卡盤、機械式卡盤等保持機構來保持工件W。保持體112也作為使加載互鎖室121開閉的蓋體發揮功能。即,在保持體112設置有用於將加載互鎖室121密封的O型圈等密封材料。另外,在搬送機構TR設置有推動器,所述推動器通過未圖示的驅動機構而移動,藉此使搭載有工件W的基座S在搬送機構TR與保持體112之間移動。The holding
在維持腔室2內的真空的狀態下,加載互鎖室121可進行基座S的搬入搬出。加載互鎖室121是被形成在腔室2的蓋體22的貫穿孔的內側面包圍,收容保持體112已保持的工件W並可密閉的空間。在加載互鎖室121中,腔室2的外部側的端部具有開口121a,由保持體112密封。另外,在加載互鎖室121中,腔室2的內部側的端部為開口121b。所述開口121b相當於由密封部520密封的開口OP。The
另外,雖然未圖示,但在加載互鎖室121設置有排氣管與通氣管,所述排氣管是與氣壓回路連接,用於對經密封的加載互鎖室121進行減壓的路徑,所述通氣管與閥等連接,用於進行加載互鎖室121的真空破壞。In addition, although not shown, the
[加熱部]
如圖10(A)及圖10(B)(圖1的B-B線剖面圖)所示,加熱部200進行通過加熱來使工件W中所含有的水分或大氣排出的脫氣處理。加熱部200具有加熱室210、加熱器220。加熱室210是具有朝向腔室2內部的開口210a的容器的內部空間。如上所述,開口210a的端部由密封體522的密封面522a密封,已載置在基座S的工件W被收容在加熱室210(圖10(B)的狀態)。所述開口210a相當於由密封部520密封的開口OP。[Heating Department]
As shown in FIG. 10(A) and FIG. 10(B) (cross-sectional view taken along the line B-B in FIG. 1 ), the
加熱器220是將通過通電而發熱的發熱體內置在如下的構件而成的裝置,所述構件是在加熱室210的內部,配置在與旋轉體3的旋轉平面平行的方向上的圓板形狀的構件。為了對工件W均勻地進行加熱,加熱器220的直徑優選與工件W相等或略大。加熱器220與已被收容在加熱室210的工件W不接觸而相向。另外,雖然未圖示,但加熱器220的發熱體與通過施加電力來使其發熱的電源連接。若考慮工件W為陶瓷基板,則為了有效地進行脫氣處理,優選將加熱器220的加熱溫度設為300℃左右,但並不限定於此。The
[成膜部]
成膜部300A、成膜部300B、成膜部300C通過濺鍍來對工件W進行成膜。在以下的說明中,當不對成膜部300A、成膜部300B、成膜部300C進行區分時,作為成膜部300進行說明。如圖2(A)及圖2(B)、圖10(A)及圖10(B)以及圖11(A)及圖11(B)(圖1的C-C線剖面圖)所示,成膜部300具有成膜室310、靶320。成膜室310是具有朝向腔室2內部的開口310a的容器的內部空間,如上所述,開口310a的端部由密封體522的密封面522a密封,已載置在基座S的工件W被收容在成膜室310(圖10(B)的狀態)。[Film Formation Department]
The
靶320是由通過濺鍍而堆積在工件W,並成為膜的成膜材料所形成的構件。靶320由未圖示的支承板保持,經由電極而與電源連接。作為成膜材料,例如使用矽、鈮、鉭、鈦、鋁等。但是,只要是通過濺鍍來成膜的材料,則可應用各種材料。在本實施方式中,在成膜部300A、成膜部300B、成膜部300C中使用不同的成膜材料的靶320,但也可以使用相同的成膜材料的靶320。The
另外,雖然未圖示,但在成膜部300設置有將濺鍍氣體導入成膜室310內的濺鍍氣體導入部、排出濺鍍氣體的排氣部。作為濺鍍氣體,例如可使用氬氣等惰性氣體。濺鍍氣體導入部包含氣體供給回路來構成,可將來自供給源的濺鍍氣體導入成膜室310內。排氣部包含氣壓回路來構成,可進行利用排氣處理的成膜室310內的減壓。在成膜部300中,通過電源來對靶320施加電力,藉此可使已被導入成膜室310的濺鍍氣體電漿化,而使成膜材料堆積在工件W。In addition, although not shown, the film forming section 300 is provided with a sputtering gas introduction section for introducing the sputtering gas into the
[冷卻部]
冷卻部400將被朝大氣中排出之前的工件W冷卻至可防止膜在大氣中被氧化的溫度為止。如圖7、圖11(A)及圖11(B)所示,冷卻部400具有冷卻室410、第一冷卻機構420。冷卻室410是具有朝向腔室2內部的開口410a的容器的內部空間。如上所述,開口410a的端部由密封體522的密封面522a密封,已載置在基座S上的工件W被收容在冷卻室410中。所述開口410a相當於由密封部520密封的開口OP。[Cooling Department]
The
第一冷卻機構420具有冷卻器421、冷卻氣體導入部422。冷卻器421是將冷卻液循環管道423內置在如下的構件而成的裝置,所述構件是在冷卻室410的內部,配置在與旋轉體3的旋轉平面平行的方向上的圓板形狀的構件。冷卻液循環管道423是在冷卻器421的內部,包含與冷卻器421同軸的螺旋狀部分來形成,且冷卻液可進行循環的通道。冷卻液循環管道423與未圖示的冷卻液供給源連接,並與將冷卻液循環供給至冷卻液流路內的配管連接。The
冷卻氣體導入部422具有導入冷卻氣體G的配管。例如,可將氮氣等惰性氣體用作冷卻氣體G。尤其若設為不含水分的高純度的氮氣,則可防止已成膜的膜的氧化。冷卻氣體導入部422包含未圖示的氣體供給回路來構成,可將來自供給源的冷卻氣體G導入冷卻室410內。The cooling
另外,設置在與冷卻部400對應的推動器500F的密封部520作為第二冷卻機構430發揮功能。第二冷卻機構430具有冷卻液循環管道431、冷卻液供給部432。冷卻液循環管道431是在密封部520的內部,包含與密封部520同軸的螺旋狀部分來形成,且冷卻液可進行循環的通道。冷卻液供給部432具有導入冷卻液的配管。冷卻液供給部432與未圖示的冷卻液供給源連接,將冷卻液循環供給至冷卻液循環管道431內。In addition, the sealing
如上所述,為了變成在已被朝大氣空間搬出時,防止已成膜的膜被氧化的溫度,冷卻器421及冷卻氣體G的冷卻溫度優選以變成60℃左右的方式設定,但並不限定於此。As described above, in order to change the temperature to prevent the film formed from being oxidized when it has been carried out into the air space, the cooling temperature of the cooler 421 and the cooling gas G is preferably set to be about 60°C, but it is not limited. Here.
進而,冷卻部400具有調整冷卻室410的內壓的冷卻室排氣部424。本實施方式的冷卻室排氣部424具有與形成在冷卻室410的開口連接的配管。冷卻室排氣部424包含未圖示的氣壓回路來構成,可進行利用排氣處理的冷卻室410內的減壓。另外,在冷卻部400設置有檢測冷卻室410的內壓的未圖示的壓力感測器、及檢測冷卻室410內的溫度的未圖示的溫度感測器。壓力感測器與後述的控制裝置70、輸出裝置79一同構成監視冷卻室410的內壓的壓力監視器。溫度感測器與控制裝置70、輸出裝置79一同構成監視冷卻室410內的溫度的溫度監視器。Furthermore, the cooling
[控制裝置]
如圖12所示,控制裝置70是控制成膜裝置1的各部的裝置。所述控制裝置70例如可包含專用的電子電路或以規定的程序進行運行的電腦等。搬入搬出部100、加熱部200、成膜部300A~成膜部300C、冷卻部400的控制內容被編程,通過可編程邏輯控制器(Programmable Logic Controller,PLC)或中央處理器(Central Processing Unit,CPU)等處理裝置來執行。[Control device]
As shown in FIG. 12, the
控制裝置70利用如上所述的程序,如圖12的框圖所示發揮功能。即,控制裝置70具有機構控制部71、加熱控制部72、成膜控制部73、冷卻控制部74、記憶部75、設定部76、輸入輸出控制部77。The
機構控制部71控制各部的驅動源、閥、電源等。加熱控制部72控制加熱器220的電源,藉此控制加熱溫度。成膜控制部73控制朝靶320的施加電力、濺鍍氣體的導入量,藉此控制成膜量。冷卻控制部74控制第一冷卻機構420、第二冷卻機構430的冷卻液的溫度,冷卻氣體G的供給量,藉此控制冷卻溫度。記憶部75記憶本實施方式的控制中需要的資訊。設定部76將已從外部輸入的資訊設定在記憶部75。例如,設定部76設定與用於加熱的目標溫度對應的加熱部200的加熱溫度,與用於冷卻的目標溫度對應的冷卻部400的冷卻溫度,用於控制冷卻室410的排氣的規定的溫度、規定的壓力、規定的時間等。The
輸入輸出控制部77是控制與成為控制對象的各部之間的信號的轉換或輸入輸出的接口。進而,控制裝置70與輸入裝置78、輸出裝置79連接。輸入裝置78是用於操作員經由控制裝置70而對成膜裝置1進行操作的開關、觸控螢幕、鍵盤、鼠標等輸入零件。The input/
輸出裝置79是使用於確認裝置的狀態的資訊變成操作員可辨認的狀態的顯示器、燈、儀錶等輸出零件。例如,輸出裝置79可顯示來自輸入裝置78的資訊的輸入畫面。例如,使冷卻室410的內部的壓力、溫度顯示,操作員可進行監視。The
[動作]
參照所述圖式,對利用如以上那樣的本實施方式的成膜裝置1在工件W進行成膜的處理進行說明。另外,成膜裝置1的各處理部PR可一邊同時搬送多個基座S,一邊一併進行對於各工件W的處理,但在以下的說明中,著眼於已載置在一個基座S的工件W進行說明。[action]
With reference to the drawings, the process of forming a film on the workpiece W using the
(工件的搬入)
首先,對利用搬入搬出部100,將應進行成膜處理的工件W搬入腔室2內的動作進行說明。如圖2(A)所示,旋轉體3的空隙部32被定位在與搬入搬出部100的開口121b相向的位置,通過已由推動器500A施力的密封部520的密封體522來將開口121b密封。另外,腔室2內通過氣壓回路的排氣處理而變成真空。(Loading of workpieces)
First, the operation of carrying the workpiece W to be subjected to the film forming process into the
在此狀態下,如圖1所示,通過搬送機構TR來搬送的搭載有未處理的工件W的基座S由未圖示的推動器施力,而由搬送部110的保持體112保持。通過臂111進行轉動,搭載有未處理的工件W的基座S來到與開口121a相向的位置。臂111朝接近開口121a的方向移動,保持體112將開口121b密封,藉此將加載互鎖室121密閉。In this state, as shown in FIG. 1, the base S carrying the unprocessed workpiece W transported by the transport mechanism TR is urged by a pusher (not shown) and held by the
通過氣壓回路而從排氣管進行排氣,藉此將加載互鎖室121減壓至變成與腔室2內相同為止。保持體112解除工件W的保持,藉此工件W被載置在密封加載互鎖室121的密封部520的載置面521a。此時,如圖5(C)、圖5(D)所示,輥332a由突出部523施力,握持部333a位於退避位置。而且,如圖2(B)、圖5(A)、圖5(B)所示,推動器500A穿過旋轉體3的空隙部32,藉此輥332a從突出部523分離。於是,臂333進行轉動,握持部333a握持搭載有工件W的基座S。The pressure of the
(工件的加熱)
繼而,對針對已被搬入腔室2內的工件W進行加熱的處理進行說明。在加熱部200中,事先將加熱器220加熱至設定溫度。如圖10(A)所示,旋轉體3進行間歇旋轉,藉此基座S移動至加熱部200的加熱室210的開口210a的正下方。然後,使推動器500B朝接近開口210a的方向移動。於是,推動器500B穿過旋轉體3的空隙部32,藉此輥332a由突出部523施力,臂333進行轉動,握持部333a從基座S退避,並且基座S被載置在載置面521a。進而,若推動器500B朝接近開口210a的方向移動,則密封體522的密封面522a將開口210a的端面氣密地密封。藉此,如圖10(B)所示,工件W與基座S一同被收容在加熱室210內。(Heating of workpiece)
Next, the process of heating the workpiece W that has been carried into the
工件W在接近加熱器220的位置與加熱器220相向,因此通過經加熱的加熱器220來將工件W加熱至設定溫度為止。在工件W被加熱後,使推動器500B朝從開口210a分離的方向移動,藉此開口210a被打開,並且已搭載在載置面521a的基座S的工件W被從加熱室210排出。在推動器500B穿過旋轉體3的空隙部32的過程中,如上所述,保持部33的臂333進行轉動,握持部333a握持基座S,並且載置面521a從基座S分離。The work W faces the
(成膜處理)
對如下的處理進行說明:在成膜部300A、成膜部300B、成膜部300C中,針對如以上那樣進行了加熱處理的工件W進行成膜。另外,成膜部300A、成膜部300B、成膜部300C的處理相同,因此主要對成膜部300A的處理進行說明。(Film forming process)
A description will be given of the following processing: in the
如圖11(A)所示,使旋轉體3進行間歇旋轉,藉此使工件W移動至與成膜部300A的開口310a相向的位置。而且,與所述同樣地,使推動器500C朝接近開口310a的方向移動,藉此工件W與基座S一同移動至成膜室310內。於是,如圖11(B)所示,密封體522的密封面522a將開口310a的端部氣密地密封。藉此,成膜室310被密閉。As shown in FIG. 11(A), by intermittently rotating the
在此狀態下,將濺鍍氣體導入成膜室310內,通過電源來對靶320施加電力。於是,濺鍍氣體電漿化而產生的離子衝撞靶320。構成靶320的成膜材料由離子擊出,並堆積在工件W。In this state, the sputtering gas is introduced into the
在成膜材料堆積在工件W後,從成膜室310中排出濺鍍氣體,並使成膜室310的壓力變成與腔室2相同。然後,若使推動器500朝從開口310a分離的方向移動,則如上所述,成膜室310的開口310a被打開,工件W與基座S一同被從成膜室310排出。進而,若推動器500進行移動,則基座S由保持部33保持,並且載置面521a從基座S分離。After the film-forming material is deposited on the workpiece W, the sputtering gas is discharged from the film-forming
使旋轉體3進行間歇旋轉,藉此如圖2(B)所示,使工件W與基座S一同移動至成膜部300B的開口310a的正下方。然後,在成膜部300B中也進行與所述相同的成膜處理。在成膜部300B的成膜後,使旋轉體3進行間歇旋轉,藉此如圖10(A)所示,使工件W與基座S一同移動至成膜部300C的開口310a的正下方。然後,在成膜部300C中也進行與所述相同的成膜處理。By intermittently rotating the
(工件的冷卻)
對針對如以上那樣進行了成膜處理的工件W進行冷卻的處理進行說明。另外,事先使冷卻液在第一冷卻機構420的冷卻器421進行循環,而冷卻至設定溫度。另外,也使冷卻液在第二冷卻機構430的冷卻液循環管道431進行循環,而冷卻至設定溫度。(Cooling of the workpiece)
The process of cooling the workpiece W that has been subjected to the film formation process as described above will be described. In addition, the cooling liquid is circulated in the cooler 421 of the
如圖7及圖11(A)所示,使成膜完的工件W與基座S一同移動至冷卻部400的冷卻室410的開口410a的正下方。與所述同樣地,如圖8所示,使推動器500F朝接近開口410a的方向移動,如圖9及圖11(B)所示,將工件W與基座S一同收容在冷卻室410內,並通過密封體522的密封面522a來將開口410a的端部氣密地密封。藉此,冷卻室410被密閉。As shown in FIGS. 7 and 11(A), the film-formed workpiece W is moved together with the susceptor S to just below the opening 410 a of the
在此狀態下,通過冷卻氣體導入部422來將冷卻氣體G導入冷卻室410內。此時,冷卻室410的內壓到達大致接近大氣壓的1000 Pa~未滿大氣壓的壓力為止。於是,通過第一冷卻機構420的冷卻器421及冷卻氣體G、第二冷卻機構430,而將已載置在基座S的工件W高速地冷卻。若由溫度感測器檢測的冷卻室410的溫度到達規定的溫度,則通過冷卻室排氣部424來對冷卻室410內的空氣進行排氣。若由壓力感測器檢測的冷卻室410的內壓變成與腔室2相同程度的壓力,則停止利用冷卻室排氣部424的排氣。通過此種排氣動作,因將冷卻氣體G導入經密閉的冷卻室410內而上升的冷卻室410的內壓回到與腔室2相同程度的壓力為止。In this state, the cooling gas G is introduced into the
其後,若使推動器500F朝從開口410a分離的方向移動,則如上所述,冷卻室410的開口410a被打開,工件W被從冷卻室410排出,並且基座S由保持部33保持,藉此載置面521a從基座S分離。After that, if the
(工件的搬出)
進而,對通過搬入搬出部100,將成膜後經冷卻的工件W朝腔室2外搬出的動作進行說明。使旋轉體3進行間歇旋轉,藉此如圖2(B)所示,使工件W與基座S一同移動至加載互鎖室121的開口121b的正下方。(Move out the work piece)
Furthermore, the operation of carrying out the work W cooled after film formation to the outside of the
如圖2(A)所示,使推動器500A朝接近開口121b的方向移動,藉此工件W與基座S一同移動至加載互鎖室121內。於是,密封體522的密封面522a將開口121b的端部氣密地密封。藉此,加載互鎖室121被密閉。通過密封加載互鎖室121的開口121a的保持體112來保持載置有處理完的工件W的基座S。然後,經由通氣管而供給排放氣(vent gas),藉此進行加載互鎖室121內的真空破壞。使臂111朝從開口121a分離的方向移動,藉此使保持體112移動,將加載互鎖室121打開。As shown in FIG. 2(A), the
如圖1所示,臂111進行轉動,藉此保持有基座S的保持體112來到與搬送機構TR相向的位置,已朝接近保持體112的方向移動的推動器支撐基座S,並且保持體112解除基座S的保持。而且,推動器將基座S載置在搬送機構TR並退避後,搬送機構TR朝後步驟搬送處理完的工件W。As shown in FIG. 1, the
[效果]
本實施方式的成膜裝置1具有:腔室2,可通過排氣來使內部變成真空;搬入搬出部100,在維持腔室2內的真空的狀態下,使工件W在腔室2的內部出入;旋轉體3,配置在腔室2的內部,通過旋轉來搬送搭載有工件W的基座S;多個處理部PR,沿著將旋轉體3的旋轉軸作為中心的圓周來配置,具有與腔室2內連通的開口ОP,對已被從開口ОP導入的工件W進行處理;以及推動器500,朝工件W從旋轉體3脫離,並被從開口ОP導入處理部PR內的方向對基座S施力。而且,多個處理部PR包含對工件W進行加熱的加熱部200、對工件W進行成膜的成膜部300、及對工件W進行冷卻的冷卻部400,在旋轉體3設置有保持部33,所述保持部33保持旋轉體3正在搬送的基座S,並通過由推動器500施力而放開基座S,在推動器500設置有密封部520,所述密封部520將工件W導入處理部PR,並且將開口ОP密封。[effect]
The
在本實施方式中,將開口ОP密封的密封部520變成和與工件W一同移動,並在加熱室210或成膜室310中被持續加熱的基座S不同的物體,因此不存在密封部520被持續加熱而變成高溫的情況。另外,基座S不被要求可承受與冷卻部400的內部的壓力差的強度,可選擇厚度與材料,因此可減小熱容量。因此,可在短時間內高效率地進行冷卻部400的工件W的冷卻。因此,不對冷卻處理進行限速,處理量提升。In this embodiment, the sealing
密封部520具有對工件W進行冷卻的第二冷卻機構430。因此,可利用冷卻部400進行冷卻,並且利用密封部520的第二冷卻機構430從表面與背面的兩面對工件W進行冷卻,因此可高速地進行冷卻。密封部520並不與工件W一同由旋轉體3搬送,因此能夠以與利用旋轉體3的基座S的搬送機構分離的簡易的結構設置第二冷卻機構430。The sealing
旋轉體3為圓形的板狀體,在旋轉體3設置有密封部520在與旋轉體3的旋轉平面交叉的方向上穿過的空隙部32,且具有保持部33,所述保持部33在密封部520穿過空隙部32的過程中,在保持基座S的保持狀態與解放基座S的解放狀態中切換。因此,可使已固定在推動器500的密封部520在旋轉體3的開口ОP側與其相反側之間移動,而切換開口ОP的密封與打開、利用保持部33的基座S的保持與解放。即,可機械式地與密封部520的密封及打開動作同步地簡便地進行基座S的保持及解放動作。The
工件W為陶瓷基板,在加熱部200中,通過加熱來對陶瓷基板進行脫氣處理,成膜部300設有多個,通過多個成膜部300,並通過濺鍍來形成利用不同的材料的多層膜。因此,即便在利用加熱部200的加熱後,通過多個成膜部300來繼續加熱的情況下,也可以通過冷卻部400來高速地冷卻基座S及工件W。The workpiece W is a ceramic substrate. In the
[變形例]
本實施方式並不限定於所述實施例,也包含如下的變形例。
(1)也可以在基座S,在介於與工件W之間的面配置基座S的熱容量以下的熱容量的傳導構件。藉此,在冷卻部400中,可使工件W的熱容易經由基座S而逃逸。例如,作為基座S及傳導構件,合適的是設為銅等金屬,但並不限定於此。[Modifications]
This embodiment is not limited to the above-mentioned examples, and also includes the following modifications.
(1) A conductive member having a heat capacity equal to or lower than the heat capacity of the base S may be arranged on the surface between the base S and the workpiece W. Thereby, in the
(2)作為處理部PR,也可以一同包含成膜部300與改質部。改質部是如下的處理部PR:使通過使製程氣體電漿化而產生的電子、離子、自由基等活性種衝撞工件W,藉此使工件W的表面改質,而提升膜的密接性。(2) As the processing part PR, the film forming part 300 and the reforming part may be included together. The reforming part is a processing part PR that causes active species such as electrons, ions, and free radicals generated by plasmating the process gas to collide with the workpiece W, thereby reforming the surface of the workpiece W and improving the adhesion of the film .
(3)也可以在加載互鎖室121,設置對經由加載互鎖室121而被從腔室2內搬出的基座S及工件W進行冷卻的冷卻裝置。例如,在與加載互鎖室121對應的密封部520設置與冷卻部400相同的冷卻機構。藉此,可促進基座S及工件W的排出前的冷卻。在此情況下,也可以在到達作為可防止膜在大氣中被氧化的溫度的目標溫度之前停止冷卻室410的冷卻,並在加載互鎖室121中進行剩餘的冷卻。藉此,可將用於使工件W變成目標溫度的冷卻時間分散成冷卻室410的冷卻時間、及加載互鎖室121的冷卻時間。因此,不使工件W長時間停留在冷卻室410,可減少處理限速,處理量提升。例如,在如圖1那樣將搭載有工件W的多個基座S依次投入旋轉體3,並使旋轉體3進行間歇旋轉來搬送至各處理部PR進行處理的情況下,若使工件W長時間停留在一個處理部PR中,則位於其搬送下游的搭載在另一基座S的工件W無法移動至下一個處理部PR,而產生等待處理時間。通過使冷卻時間分散,減少冷卻室410的冷卻時間,而可減少搭載在另一基座S的工件W的等待處理時間,處理量提升。(3) The
(4)成膜部300的數量並不限定於三個,也可以是兩個以下或四個以上。通過增加成膜部300的數量,可提升成膜率。另外,成膜部300只要是使用靶320的濺鍍裝置即可。但是,在成膜部300、改質部中產生電漿的構成並不限定於特定的種類。(4) The number of film forming parts 300 is not limited to three, and may be two or less or four or more. By increasing the number of film forming parts 300, the film forming rate can be improved. In addition, the film forming section 300 may be a sputtering device using the
(5)旋轉體3的空隙部32也可以是形成在圓形的板狀體的貫穿孔。另外,旋轉體3並不限定於旋轉台。也可以是在從旋轉中心呈放射狀地延長的臂保持支撐部或工件W來進行旋轉的旋轉體3。由旋轉體3搬送並同時得到處理的工件W的數量、保持其的保持部33的數量也不限定於所述實施例中所示的數量。保持部33也只要是在密封部520穿過空隙部32的過程中,在保持基座S的保持狀態與解放基座S的解放狀態中切換的構成即可,並不限定於所述實施例。(5) The
(6)處理部PR可以位於腔室2的設置面側,也可以位於與其相反側,也可以位於側面側。使工件W在處理部PR中出入的方向也可以從處理部PR的設置面側,也可以從與其相反側,也可以從側面側。當將順從重力之側設為下方,將抗拒重力之側設為上方時,在所述實施例中,將各處理部PR配置在旋轉體3的上方,但也可以將各處理部PR配置在旋轉體3的下方。另外,旋轉體3並不限定於水平,也可以是垂直的配置,也可以是傾斜的配置。進而,成膜裝置1的設置面可以是地面,也可以是頂棚,也可以是側壁面。相對於基座S的工件W的搭載也可以通過機械式的保持、黏接、吸附等來進行。即,所謂工件W搭載在基座S,是指不論基座S為何種角度,均變成可與工件W一同移動的狀態,並不限定於工件W裝載在水平的基座S上的情況。(6) The treatment part PR may be located on the installation surface side of the
(7)設置在冷卻室410的壓力感測器或溫度感測器也可以適宜省略。當省略溫度感測器時,在從冷卻開始起經過了事先求出的規定的冷卻時間的時間點,開始冷卻室410的冷卻後的排氣。另外,當省略壓力感測器時,在從排氣開始起經過了事先求出的規定的時間時,停止排氣。(7) The pressure sensor or temperature sensor provided in the
(8)在圖7、圖11(A)及圖11(B)中所示的例子中,冷卻氣體導入部422從冷卻室410的與被冷卻的工件W相向的面導入冷卻氣體G,但冷卻氣體G的導入方向並不限定於此。例如,也可以在冷卻室410的側壁設置開口,朝冷卻氣體導入部422的沿著工件W的方嚮導入冷卻氣體G。(8) In the example shown in FIGS. 7, 11(A) and 11(B), the cooling
(9)以上,對本發明的實施方式及各部的變形例進行了說明,但所述實施方式或各部的變形例是作為一例來提示者,並不意圖限定發明的範圍。所述這些新穎的實施方式能夠以其它各種方式來實施,可在不脫離發明的主旨的範圍內進行各種省略、替換、變更。這些實施方式或其變形包含在發明的範圍或主旨中,並且包含在申請專利範圍記載的發明中。(9) As mentioned above, the embodiment of the present invention and the modification of each part have been described, but the embodiment or the modification of each part is presented as an example and is not intended to limit the scope of the invention. The novel embodiments described above can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments or their modifications are included in the scope or spirit of the invention, and are included in the invention described in the scope of patent application.
1:成膜裝置 2:腔室 3:旋轉體 21:收容體 22:蓋體 23:腔室排氣部 31、510:傳動軸 32:空隙部 33:保持部 70:控制裝置 71:機構控制部 72:加熱控制部 73:成膜控制部 74:冷卻控制部 75:記憶部 76:設定部 77:輸入輸出控制部 78:輸入裝置 79:輸出裝置 100:搬入搬出部 110:搬送部 111、333:臂 112:保持體 121:加載互鎖室 121a、121b、210a、310a、410a、OP:開口 200:加熱部 210:加熱室 220:加熱器 300、300A~300C:成膜部 310:成膜室 320:靶 331:基台 332:轉換部 332a:輥 332b:軸 333a:握持部 333b:抵接面 333c:保持面 334:施力構件 334a、334b:板材 400:冷卻部 410:冷卻室 420:第一冷卻機構 421:冷卻器 422:冷卻氣體導入部 423、431:冷卻液循環管道 424:冷卻室排氣部 430:第二冷卻機構 432:冷卻液供給部 500、500A~500F:推動器 520:密封部 521:載置台 521a:載置面 522:密封體 522a:密封面 522b:密封材料 523:突出部 523a:傾斜面 523b:外周面 G:冷卻氣體 PR:處理部 S:基座 TR:搬送機構 Sa:收容部 Sb:腳部 W:工件1: Film forming device 2: chamber 3: Rotating body 21: Containment 22: Lid 23: Chamber exhaust 31, 510: drive shaft 32: Gap 33: holding part 70: control device 71: Institutional Control Department 72: Heating Control Department 73: Film Formation Control Department 74: Cooling Control Department 75: Memory Department 76: Setting section 77: Input and output control unit 78: input device 79: output device 100: Move in and out department 110: Transport Department 111, 333: Arm 112: keep body 121: Load Interlock Room 121a, 121b, 210a, 310a, 410a, OP: opening 200: heating section 210: heating chamber 220: heater 300, 300A~300C: Film forming part 310: Film forming chamber 320: target 331: Abutment 332: Conversion Department 332a: Roll 332b: axis 333a: Grip 333b: abutment surface 333c: keep noodles 334: force component 334a, 334b: plates 400: Cooling part 410: Cooling Room 420: The first cooling mechanism 421: Cooler 422: Cooling gas introduction part 423, 431: Coolant circulation pipeline 424: Cooling Chamber Exhaust 430: second cooling mechanism 432: Coolant Supply 500, 500A~500F: Pusher 520: Sealing part 521: Placing Table 521a: Mounting surface 522: Seal 522a: sealing surface 522b: Sealing material 523: protruding part 523a: Inclined surface 523b: outer peripheral surface G: Cooling gas PR: Processing Department S: Pedestal TR: transfer mechanism Sa: Containment Department Sb: feet W: Workpiece
圖1是表示實施方式的經簡化的透視平面圖。 圖2(A)~圖2(B)是表示利用圖1的密封部的開口的密封時(圖2(A))、打開時(圖2(B))的A-A線剖面圖。 圖3(A)~圖3(C)是表示實施方式中所使用的基座的平面圖(圖3(A))、側面圖(圖3(B))、底面圖(圖3(C))。 圖4是表示實施方式的旋轉體的平面圖。 圖5(A)~圖5(D)是表示保持部的基座保持狀態的平面圖(圖5(A))、正面圖(圖5(B)),表示基座解放狀態的平面圖(圖5(C))、正面圖(圖5(D))。 圖6是表示實施方式的密封部的立體圖。 圖7是表示實施方式的冷卻部的開口的打開時的部分剖面圖。 圖8是表示實施方式的冷卻部的密封部的動作途中的部分剖面圖。 圖9是表示實施方式的冷卻部的開口的密封時的部分剖面圖。 圖10(A)~圖10(B)是表示利用圖1的密封部的開口的密封時(圖10(A))、打開時(圖10(B))的B-B線剖面圖。 圖11(A)~圖11(B)是表示利用圖1的密封部的開口的密封時(圖11(A))、打開時(圖11(B))的C-C線剖面圖。 圖12是表示實施方式的控制裝置的框圖。Fig. 1 is a simplified perspective plan view showing the embodiment. 2(A) to 2(B) are cross-sectional views taken along the line A-A showing the time of sealing (FIG. 2(A)) and the time of opening (FIG. 2(B)) with the opening of the sealing portion of FIG. 1. 3(A) to 3(C) are a plan view (FIG. 3(A)), a side view (FIG. 3(B)), and a bottom view (FIG. 3(C)) of the base used in the embodiment . Fig. 4 is a plan view showing the rotating body of the embodiment. Figures 5(A) to 5(D) are a plan view (Figure 5(A)) and a front view (Figure 5(B)) showing the holding state of the base of the holding portion, and a plan view showing the released state of the base (Figure 5) (C)), the front view (Figure 5 (D)). Fig. 6 is a perspective view showing a sealing portion of the embodiment. Fig. 7 is a partial cross-sectional view showing the opening of the cooling unit according to the embodiment at the time of opening. Fig. 8 is a partial cross-sectional view showing the operation of the sealing part of the cooling part according to the embodiment. Fig. 9 is a partial cross-sectional view showing the sealing of the opening of the cooling unit according to the embodiment. 10(A) to 10(B) are cross-sectional views taken along the line B-B when sealing (FIG. 10(A)) and opening (FIG. 10(B)) with the opening of the sealing portion of FIG. 1. Figs. 11(A) to 11(B) are cross-sectional views taken along the line C-C when sealing (Fig. 11(A)) and opening (Fig. 11(B)) using the opening of the sealing portion of Fig. 1. Fig. 12 is a block diagram showing the control device of the embodiment.
2:腔室 2: chamber
3:旋轉體 3: Rotating body
21:收容體 21: Containment
22:蓋體 22: Lid
510:傳動軸 510: drive shaft
33:保持部 33: holding part
333:臂 333: Arm
410a、OP:開口 410a, OP: opening
332:轉換部 332: Conversion Department
332a:輥 332a: Roll
400:冷卻部 400: Cooling part
410:冷卻室 410: Cooling Room
420:第一冷卻機構 420: The first cooling mechanism
421:冷卻器 421: Cooler
422:冷卻氣體導入部 422: Cooling gas introduction part
423、431:冷卻液循環管道 423, 431: Coolant circulation pipeline
424:冷卻室排氣部 424: Cooling Chamber Exhaust
430:第二冷卻機構 430: second cooling mechanism
432:冷卻液供給部 432: Coolant Supply
500、500F:推動器 500, 500F: Pusher
520:密封部 520: Sealing part
522:密封體 522: Seal
522a:密封面 522a: sealing surface
522b:密封材料 522b: Sealing material
523:突出部 523: protruding part
G:冷卻氣體 G: Cooling gas
PR:處理部 PR: Processing Department
Sb:腳部 Sb: feet
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