KR102520358B1 - Film formation apparatus and moisture removal method for film formation apparatus - Google Patents

Abstract

The present invention provides a film formation device capable of accelerating the removal of moisture in a chamber without complicating the device and a method for removing moisture in the film formation device.
A film forming apparatus according to an embodiment of the present invention includes a chamber 10 capable of evacuating the inside of the chamber 10, an exhaust unit 20 for exhausting the inside of the chamber 10, and a rotary table 31 to form a workpiece W. A processing space 41 in which a plurality of plasma processing units 40 perform plasma processing; 42), and at least one of the plurality of plasma processing units 40 is a film forming processing unit 410 that performs a film forming process by sputtering on the workpiece W to be circularly conveyed, and among the plurality of plasma processing units 40 In at least one, in a state where the film formation process by the film formation processing unit 410 is not performed, plasma is generated together with exhaustion by the exhaust unit 20 and rotation of the rotation table 31, and the chamber is passed through the rotation table 31. 10 is a heating unit 420 that removes moisture by heating the inside.

Description

Film formation device and method for removing moisture from the film formation device

The present invention relates to a film formation device and a method for removing moisture from the film formation device.

BACKGROUND ART In manufacturing processes of various products such as semiconductor devices, liquid crystal displays, organic EL displays, and optical disks, thin films such as optical films are sometimes formed on workpieces such as wafers and glass substrates. A thin film can be formed by performing a film formation process for forming a film of metal or the like on a workpiece or a film process such as etching, oxidation or nitriding on the formed film.

Although the film formation process or film process can be performed by various methods, one of them is a method in which plasma is generated in a chamber depressurized to a predetermined vacuum level and processing is performed using the plasma. In the film forming process, an inert gas is introduced into a chamber in which a target made of a film forming material is placed, and a direct current voltage is applied to the target. Ions of an inert gas converted into plasma are caused to collide with the target, and the film formation material protruding from the target is deposited on the work to form a film. Such a film forming process is called sputtering. In film processing, a process gas is introduced into a vacuum chamber in which electrodes are placed, and a high-frequency voltage is applied to the electrodes. A film treatment is performed by making active species, such as ions and radicals, of a process gas converted into plasma collide with a film on a workpiece.

A rotation table, which is a rotating body, is attached to the inside of one chamber so that such film formation and film processing can be performed continuously, and a plurality of film formation units and film processing units are disposed in the circumferential direction above the rotation table. There is a plasma processing device. The unit for film formation and the unit for film processing each have partitioned processing chambers (a film formation chamber and a film processing chamber). In each processing chamber, the lower side toward the turntable is open, and a thin film such as an optical film is formed by holding and conveying a workpiece on the turntable and passing it directly under the plurality of processing chambers.

Patent Document 1: Japanese Unexamined Patent Publication No. 2005-352018 Patent Document 2: Japanese Unexamined Patent Publication No. 2010-225847

Film formation materials scattered from the film formation unit are deposited in various locations within the chamber of the above film formation apparatus as the film formation process continues. When the deposited film-forming material is peeled off, the work to be film-formed is contaminated. However, when the film adheres directly to the inner wall of the chamber or to the rotary table, it is very difficult to remove it. For this reason, the attachment-and-detachable board is provided so as to cover the inner wall of the chamber, the surface of the turntable, and the like. The anti-attachment plate prevents film formation material from adhering to the inner wall of the chamber or the surface of the rotary table by adherence of the film formation material that scatters during the film formation process.

Such an anti-crack plate needs to be removed and cleaned (maintenance is performed) to prevent the adhered film from peeling off and contaminating the work after subsequent film formation. For example, after opening the chamber to the atmosphere and removing the anti-chak plate from the chamber, the film deposited on the surface is removed by sand blasting and then washed with pure water. After washing and drying, it is conveyed to the film forming apparatus in a vacuum packed state, opened, and attached to the film forming apparatus again to form a film.

Here, when film formation is performed by sputtering, the chamber of the film formation apparatus is depressurized to a high vacuum region. Thereby, it is possible to reduce impurities present in the chamber and also reduce gas molecules so that the mean free path becomes large. As a result, the film-forming material protruding from the target touches the work, resulting in a stable and dense film quality. However, immediately after replacing the anti-chak plate, the state in which the vacuum level in the chamber does not rise continues for a long period of time even if the film forming apparatus is operated and the chamber is evacuated to reduce the pressure. This is due to the fact that at the time of attaching the anti-chak plate after cleaning and drying, moisture remains inside the anti-chak plate, and as the pressure in the chamber decreases, a large amount of moisture continues to be generated from the anti-chap plate.

Further, when the inside of the chamber is released to the atmosphere for maintenance or the like, moisture contained in the air is adsorbed to walls and various members in the chamber. For this reason, it is necessary to remove moisture not only from the anti-chak plate but also from all members in the chamber exposed to the atmosphere.

Since moisture is gradually evaporated and exhausted by depressurizing the inside of the chamber, this condition is improved as film formation continues. However, since the number and area of members containing moisture, including the anti-chak plate mounted in the chamber, are very large, the amount of moisture generated also increases. For this reason, it is difficult to completely remove moisture in a short time and obtain a degree of vacuum required for the treatment. For example, it takes several days to several weeks to reach a desired state in film formation. In this case, a period in which film formation cannot be performed continues for a long time after maintenance is performed by opening the chamber to the atmosphere or after replacement of the anti-attachment plate, resulting in a decrease in productivity. In addition, if film formation is performed in a state where moisture remains, adverse effects on film formation, such as roughness and defects on the surface of the film formed, may be exerted.

In order to cope with this, a method of providing a heating device such as an infrared lamp in the chamber (Patent Document 1) and a method of introducing heated gas to heat members in the chamber to promote evaporation of moisture (Patent Document 2) It is proposed. However, in a batch-type film formation apparatus in which workpieces are rotated and transported to be processed across a plurality of processing chambers, providing a heating device for each processing chamber or introducing heated inert gas causes complexity of the device configuration and cost. it costs

As for the anti-chak plates, it is also possible to put them in a heating furnace to dehumidify them (evaporating moisture) before installing them in the chamber, but each of the anti-chak plates is large and there are many of them, so it is not possible to accommodate them all and dehumidify them collectively With heating furnaces, it is not realistic. In addition, even if it is dehumidified in advance, since it comes into contact with the atmosphere when it is installed in the chamber, moisture is adsorbed and discarded again.

The present invention has been proposed in order to solve the above problems, and an object of the present invention is to provide a film formation apparatus capable of accelerating the removal of moisture in a chamber and a method for removing moisture in the film formation apparatus without causing complexity of the apparatus. .

To achieve the above object, the film forming apparatus of the present embodiment provides a chamber capable of evacuating the inside of the chamber, an exhaust unit for exhausting the inside of the chamber, and a transfer unit for circularly transferring a workpiece by a rotary table provided in the chamber. and a plurality of plasma processing units provided in the chamber and performing a plasma process on the work that is circularly conveyed, wherein the plurality of plasma processing units each have a processing space for performing a plasma process, and at least one of the plurality of plasma processing units , a film formation processing unit that performs a film forming process by sputtering on the work that is circularly conveyed, and in a state in which at least one of the plurality of plasma processing units is not performing a film forming process by the film forming unit, exhausting by the exhaust unit, and A heating unit that removes moisture in the chamber by generating plasma and heating the inside of the chamber through the rotation table along with the rotation of the rotary table.

Further, a method for removing moisture in a film forming apparatus according to the present invention includes an exhaust start step in which an exhaust unit starts exhausting a chamber, a rotation start step in which a rotary table starts rotating, and a process gas introduction unit introduces process gas into a processing space. A process gas introduction process, a plasma generation process in which the plasma generator converts the process gas in the processing space into plasma, a process gas introduction step in which the process gas introduction unit stops introduction of the process gas, and A plasma stopping process of stopping the plasmaization of the process gas in space, and a rotation stopping process of stopping the rotation of the rotary table.

According to the present invention, it is possible to provide a film forming apparatus capable of accelerating the removal of moisture in a chamber without complicating the apparatus, and a method for removing moisture in the film forming apparatus.

1 is a perspective plan view schematically showing the configuration of a film forming apparatus according to an embodiment.
FIG. 2 is a cross-sectional view taken along line AA in FIG. 1 , and is a detailed view of the internal configuration of the film forming apparatus of the embodiment of FIG. 1 seen from the side.
3 is a flowchart of a water removal process by heating in the film forming apparatus of the present embodiment.
4 is a cross-sectional view schematically showing the configuration of a part of the film forming apparatus of the present embodiment.
5 is a cross-sectional view schematically showing the configuration of a part of the film forming apparatus of the present embodiment.
6 is a timing chart showing the operation of each element of the film formation process from maintenance of the film formation apparatus of the present embodiment.

An embodiment of the film forming apparatus according to the present invention will be described in detail with reference to the drawings.

[outline]

As shown in the perspective plan view of FIG. 1 and the cross-sectional view of FIG. 2 , the film forming apparatus 1 is a device that forms a film on a workpiece W by sputtering. The work W refers to a target object to be subjected to the film forming process. As the work W, for example, a glass substrate or a wafer is used. However, as long as it is a target for film formation by plasma processing, it can be used as the work W regardless of its shape or material. The film forming apparatus 1 includes a chamber 10, an exhaust unit 20, a transfer unit 30, a plasma processing unit 40, a deposition plate 50, a transfer chamber 60, a cooling device 70, a gas It has an analysis device 80 and a control unit 90.

The chamber 10 is a container capable of vacuuming the inside. The exhaust unit 20 exhausts the inside of the chamber 10 . The conveyance unit 30 circularly conveys the work W by means of a rotary table 31 provided in the chamber 10 . The plasma processing unit 40 is provided in the chamber 10 and performs a plasma treatment on a work W that is circularly conveyed. Plasma treatment is a variety of treatments performed on a target to be treated using gas converted into plasma.

A plurality of plasma processing units 40 are provided. The plurality of plasma processing units 40 each have a processing space 41 in which plasma processing is performed. Three of the plurality of plasma processing units 40 are film forming units 410 that perform a film forming process by sputtering on the work W that is circularly conveyed. One of the plurality of plasma processing units 40 generates plasma and rotates together with exhaust by the exhaust unit 20 and rotation of the rotary table 31 in a state in which the film formation process by the film forming unit 410 is not performed. The heating unit 420 removes moisture in the chamber 10 by heating the inside of the chamber 10 through the table 31 .

The anti-attachment plate 50 is detachably provided in the chamber 10 to prevent film formation material scattering from the film formation processing unit 410 from adhering to the chamber 10 . The transfer chamber 60 is a container for transporting the workpiece W into and out of the chamber 10 via the gate valve GV1. The cooling device 70 is a device that removes moisture in the gas released from the chamber 10 by cooling the gas (gas). The cooling device 70 of this embodiment is provided in the transfer chamber 60 .

The gas analyzer 80 is a device for measuring component amounts of gas exhausted from the chamber 10 . The control unit 90 controls the film forming unit 410 and the heating unit 420 based on the component amounts of the gas measured by the gas analyzer 80 .

[composition]

[chamber]

As shown in FIG. 1 , the chamber 10 is a cylindrical container, the interior of which is partitioned by a partition 12 and divided into a plurality of fan-shaped compartments. A film forming unit 410 is disposed in three of the compartments, and a heating unit 420 is disposed in the other one of the compartments. Further, the transfer chamber 60 is connected to another one of the compartments.

As shown in Fig. 2, the chamber 10 is formed surrounded by a disk-shaped ceiling 10a, a disk-shaped inner bottom surface 10b, and an annular inner peripheral surface 10c. The partition portion 12 is a rectangular wall plate arranged radially from the center of the columnar shape, extends from the ceiling 10a toward the inner bottom surface 10b, and does not reach the inner bottom surface 10b. That is, a columnar space is secured on the inner bottom surface 10b side.

In addition, the chamber 10 is provided so that the ceiling 10a is attachable and detachable. By removing the ceiling 10a, maintenance including cleaning of the inside of the chamber 10, attachment and detachment of the anti-chak plate 50, and the like becomes possible. The inside of the chamber 10 is sealed by attaching the ceiling 10a via a sealing member such as an O-ring (not shown).

As shown in the sectional view of FIG. 5 , a carry-in/out port 101 for carrying in/out of the workpiece W can be provided on the side wall of the chamber 10 . The carry-in/out port 101 faces the carry-in/out port 102 provided on the side wall of the transfer chamber 60 . The carry-in/out port 102 can be opened and closed by a gate valve GV1. The gate valve GV1 can be provided with a gate opening/closing mechanism 103, a door 104, and a sealing member 105 such as an O (O) ring. The door 104 is moved up and down and opened and closed by the gate opening and closing mechanism 103 . When the door 104 is closed by the gate opening/closing mechanism 103, the sealing member 105 is pressed against the wall surface of the loading/unloading port 102, and the loading/unloading port 102 is airtightly closed.

Returning to FIG. 1 , the partition 12 partitions the processing spaces 41 and 42 in which plasma processing is performed. That is, the film forming processing unit 410 and the heating unit 420 each have processing spaces 41 and 42 that are smaller than the chamber 10 and are isolated from each other. Since the processing spaces 41 and 42 are partitioned by the partitioning portion 12 , diffusion of the film forming material or gas from the film forming processing unit 410 and the heating unit 420 is suppressed. Between the lower end of the division part 12 and the rotary table 31 mentioned later, as shown in FIG. 2, the gap which can pass the workpiece|work W on the rotary table 31 which rotates is formed. That is, the height of the partitioning part 12 is set so that a slight gap is formed between the lower edge of the partitioning part 12 and the work W.

[Exhaust]

The exhaust unit 20 has a negative pressure circuit including pipes and pumps and valves not shown. The exhaust unit 20 is connected to an exhaust port 11 provided in the chamber 10 . The exhaust unit 20 depressurizes the inside of the chamber 10 by exhausting the air through the exhaust port 11 to create a vacuum.

[Return Department]

The transport unit 30 has a rotary table 31, a motor 32, and a holding unit 33, and circularly transports the workpiece W along a transport path L (see FIG. 1) that is a circumferential locus. . The surface on which the workpiece W is placed on the rotary table 31 is arranged such that a gap through which the workpiece W passes is vacant between the lower end of the dividing section 12 and the surface on which the workpiece W is placed. The rotary table 31 has a disk shape and is widely spread in the chamber 10 to such an extent that it does not come into contact with the inner circumferential surface 10c. The rotary table 31 has a continuous surface so as to cover each processing space 41 in the chamber 10 in plan view.

The rotary table 31 is made of metal and can be made of, for example, stainless steel. The surface is subjected to a plasma-resistant surface treatment to prevent abrasion by plasma.

The motor 32 continuously rotates the rotation table 31 at a predetermined rotational speed with the center of rotation as a rotation axis. The holding portion 33 is a groove, hole, protrusion, jig, holder, etc. arranged at an equal circumferential position on the upper surface of the rotary table 31, and the tray 34 loaded with the work W is held by a mechanical chuck, an adhesive chuck, or the like. keep The tray 34 is a member for conveying the work W in a loaded state. For example, on the tray 34, the workpieces W are arranged in a matrix form. Six holding parts 33 of this embodiment are arranged on the rotary table 31 at intervals of 60 degrees. However, the number of workpieces W and trays 34 transported simultaneously is not limited to this.

[Film Formation Processing Unit]

The film formation processor 410 generates plasma and exposes the target 412 made of a film formation material to the plasma. In this way, the film forming unit 410 causes ions included in the plasma to collide with the film forming material to deposit protruding particles on the workpiece W to form a film. As shown in FIG. 2 , this film formation processing unit 410 is constituted by a sputter source composed of a target 412, a backing plate 413, and an electrode 414, a power supply unit 416, and a sputter gas introduction unit 419. A plasma generator is provided.

The target 412 is a plate-like member composed of a film forming material that is deposited on the work W to become a film. The target 412 is spaced apart and provided on the conveyance path L of the workpiece W disposed on the rotary table 31 . The surface of the target 412 is held on the ceiling 10a of the chamber 10 so as to face the workpiece W disposed on the rotary table 31 . Three targets 412 are provided at position (1) arranged on a vertex of a triangle in plan view.

The backing plate 413 is a support member holding the target 412 . This backing plate 413 holds each target 412 individually. The electrode 414 is a conductive member for individually applying electric power to each target 412 from the outside of the chamber 10, and is electrically connected to the target 412. The power applied to each target 412 can be individually changed. In addition, the sputter source is appropriately equipped with a magnet, a cooling mechanism, and the like as needed.

The power supply unit 416 is, for example, a DC power supply that applies a high voltage, and is electrically connected to the electrode 414 . The power supply unit 416 applies power to the target 412 through the electrode 414 . The rotary table 31 is at the same potential as the grounded chamber 10, and a potential difference is generated by applying a high voltage to the target 412 side. In addition, the power supply unit 416 can also be used as an RF power supply for performing high-frequency sputtering.

As shown in FIG. 2 , the sputtering gas introduction unit 419 introduces the sputtering gas G1 into the chamber 10 . The sputtering gas inlet 419 includes a sputtering gas G1 supply source such as a cylinder (not shown), a pipe 418, and a gas inlet 417. The pipe 418 is connected to the supply source of the sputter gas G1, passes through the chamber 10 airtightly, extends inside the chamber 10, and opens its end as a gas inlet 417.

The gas inlet 417 is opened between the rotary table 31 and the target 412, and the sputtering gas (G1) for film formation is supplied to the processing space 41 formed between the rotary table 31 and the target 412. introduce As the sputtering gas G1, a rare gas can be employed, and argon (Ar) gas or the like is suitable.

In such a film formation processing unit 410, the sputter gas G1 is introduced from the sputter gas introduction unit 419, and the power supply unit 416 applies a high voltage to the target 412 via the electrode 414. In this case, the sputter gas G1 introduced into the processing space 41 is converted into plasma, and active species such as ions are generated. Ions in the plasma collide with the target 412 and cause particles of the film formation material to bounce off.

The workpiece W that is circularly conveyed by the rotation table 31 passes through the processing space 41 . Particles of the protruding film-forming material are deposited on the work W when the work W passes through the processing space 41, and a film of the particles is formed on the work W. The work W is circularly conveyed by the rotation table 31, and the film forming process is performed by repeatedly passing through the processing space 41.

[Heating part]

The heating unit 420 heats the inside of the chamber 10 by generating inductively coupled plasma in the processing space 42 into which the process gas G2 is introduced. The heating unit 420 of the present embodiment also functions as a film processing unit that performs film processing on the film formed on the workpiece W by the film forming unit 410 . The film treatment is a treatment for changing the properties of a film deposited by a film formation treatment, and includes treatment such as oxidation, nitriding, etching, ashing, and the like. For example, when oxidation is performed as a film treatment, chemical species are generated by converting oxygen gas into plasma. Oxygen atoms contained in the generated chemical species collide with the film on the workpiece W to form an oxide film, which is a compound film.

As shown in FIG. 2 , the heating unit 420 is a tubular body 421, a window member 422, an antenna 423, an RF power supply 424, a matching box 425, and a process gas introduction unit 428. It has a plasma generator constituted by

The tubular body 421 is a member covering the periphery of the processing space 42 . As shown in FIGS. 1 and 2 , the cylindrical body 421 is a cylinder having a rectangular shape with an annular horizontal cross section, and has an opening. The tubular body 421 is fitted to the ceiling 10a of the chamber 10 so that its opening faces away from the rotary table 31 side, and protrudes into the internal space of the chamber 10 . The cylindrical body 421 is made of the same metal as the rotary table 31, and plasma resistance and adhesion prevention processing of the film-forming material are applied to the surface by yttria thermal spraying or the like.

The window member 422 is a flat plate made of a dielectric material such as quartz having a substantially similar shape to the horizontal cross section of the tubular body 421 . This window member 422 is provided so as to close the opening of the cylindrical body 421, and divides the processing space 42 into which the process gas G2 in the chamber 10 is introduced and the inside of the cylindrical body 421. . In addition, the window member 422 may be a dielectric material such as alumina or a semiconductor material such as silicon.

The processing space 42 is formed between the rotary table 31 and the inside of the tubular body 421 in the heating unit 420 . When the upper surface of the turn table 31 repeatedly passes through this processing space 42, the temperature of the turn table 31 rises by radiation using plasma as a heat source, and heat propagates to the surroundings as well. That is, the inside of the chamber 10 is heated by the heat of the plasma through the rotary table 31 . In addition, when the film process is performed in the heating unit 420, the film process is performed by repeatedly passing the workpiece W circulated and conveyed by the rotary table 31 through the process space 42.

The antenna 423 is a conductor wound in a coil shape, and is disposed in the inner space of the cylindrical body 421 isolated from the processing space 42 in the chamber 10 by the window member 422, so that the current As a flow, it generates an electric field. The antenna 423 is preferably disposed near the window member 422 so that the electric field generated by the antenna 423 is efficiently introduced into the processing space 42 through the window member 422 . An RF power supply 424 for applying a high frequency voltage is connected to the antenna 423 . A matching box 425, which is a matching circuit, is connected to the output side of the RF power supply 424. The matching box 425 stabilizes plasma discharge by matching impedances on the input side and the output side.

As shown in FIG. 2 , the process gas introduction unit 428 introduces the process gas G2 into the processing space 42 . The process gas introduction part 428 has a supply source of process gas G2, such as a cylinder (not shown), the pipe 427, and the gas inlet 426. A pipe 427 is connected to a supply source of the process gas G2, passes through the chamber 10 while hermetically sealing it, extends inside the chamber 10, and opens its end as a gas inlet 426. there is.

The gas inlet 426 opens into the processing space 42 between the window member 422 and the rotary table 31, and introduces the process gas G2. As the process gas G2, a noble gas can be employed, and argon gas or the like is suitable. In addition to argon gas, oxygen (O ₂ ) gas is added to the process gas G2 of the present embodiment.

In this heating unit 420, a high frequency voltage is applied to the antenna 423 from the RF power supply 424. As a result, a high-frequency current flows through the antenna 423, and an electric field is generated by electromagnetic induction. An electric field is generated in the processing space 42 through the window member 422 to convert the process gas G2 into plasma, thereby generating inductively coupled plasma. The surface of the rotary table 31 passing through the processing space 42 is heated by this plasma.

Further, when the film treatment is performed by the heating unit 420, chemical species of oxygen including oxygen ions are generated, collide with the film on the workpiece W, and bond to atoms of the film material. As a result, the film on the work W becomes an oxide film. The workpiece W is passed around the chamber 10 several times in the circumferential direction, alternately passing through the three film forming processing units 410 and the heating unit 420, thereby forming a film on the workpiece W. and film treatment are alternately repeated to grow a film having a desired thickness. For this reason, the film forming apparatus 1 of the present embodiment is configured as a batch type apparatus capable of collectively forming films on a plurality of workpieces W held by the plurality of holders 33 .

[Anti-chak version]

The anti-chak plate 50 is, for example, a metal plate. A plasma sprayed film of, for example, aluminum or an aluminum alloy is formed on the surface of the anti-chavage plate 50, and the surface is roughened by sandblasting or the like. As a result, the adhesiveness with the deposited film is improved, and peeling of the film material is suppressed.

The anti-chak plate 50 is arranged so as to cover, for example, the inner circumferential surface 10c of the chamber 10 by combining a plurality of them. In addition, although not shown, the anti-chak plate 50 is arrange|positioned also on the turn table 31, in a location other than the tray 34. The tray 34 also functions as an anti-catch plate 50 that prevents film material from adhering to the rotary table 31 . An anti-chak plate 50 is also disposed on the side of the partition 12 . Also around the target 412 in the processing space 41 of the film forming unit 410, an anti-attachment plate 50 is provided. In this way, the anti-chak plate 50 is appropriately disposed at a location where the film forming material may adhere.

[Transfer Chamber]

As shown in FIGS. 1 and 4 , the transfer chamber 60 is a passage having an internal space in which the workpiece W before being carried into the chamber 10 is accommodated. The transfer chamber 60 is connected to the chamber 10 via a gate valve GV1. In the inner space of the transfer chamber 60, a transfer device 106 for carrying in and carrying out the workpiece W between the chamber 10 and the chamber 10 is provided. The transfer chamber 60 is depressurized by the exhaust of the vacuum pump 107, and the tray ( 34) is carried into the chamber 10, and the tray 34 on which the processed workpiece W is mounted is unloaded from the chamber 10.

As shown in FIG. 5 , in the transfer chamber 60 , a carry-in/out port 108 for loading and unloading the workpiece W can be provided on a side wall opposite to the side wall provided with the carry-in/out port 102 . The carry-in/out port 108 faces a carry-in/out port 109 provided on the side wall of the transfer chamber 60 of the load-lock portion 62 described later. The carry-in/out port 108 can be opened and closed by a gate valve GV2. The gate valve GV2 can be provided with a gate opening/closing mechanism 110, a door 111, and a sealing member 112 such as an O-ring. The door 111 is moved up and down and opened and closed by the gate opening and closing mechanism 110 . When the door 111 is closed by the gate opening/closing mechanism 110, the sealing member 112 is pressed against the wall surface of the loading/unloading port 108, and the loading/unloading port 108 is airtightly closed.

As shown in FIG. 4 , a load lock portion 62 is connected to the transfer chamber 60 via a gate valve GV2. The load-lock unit 62 transfers the tray 34 loaded with the unprocessed workpiece W from the outside by the transfer device 106 in a state in which the vacuum of the transfer chamber 60 is maintained, and the transfer chamber 60 This is a device for transporting the tray 34 loaded with the processed workpiece W from the transfer chamber 60. Further, the load lock portion 62 is depressurized by the exhaust of the vacuum pump 113 .

[Cooling device]

The cooling device 70 is connected to the transfer chamber 60 as shown in FIGS. 1 and 4 . The cooling device 70 includes a refrigerator 71 and a cooling coil 72, and the moisture in the transfer chamber 60 is cooled by the refrigerator 71 while evacuating by the vacuum pump 107 ( 72) is a device that condenses and captures. Since moisture is captured as frost, a defrosting operation to remove frost from the coil is performed as maintenance for opening the transfer chamber 60 to the atmosphere.

The cooling coil 72 is composed of a metal pipe such as copper, and a liquid or gaseous refrigerant flows therein. The refrigerant can be, for example, a gas such as a fluon-based mixed gas. The refrigerant is cooled to a cryogenic temperature below zero (about -150°C to -1°C) by the refrigerator 71 and passes through the inside of the cooling coil 72 . The cooling coil 72 is fixedly disposed inside the transfer chamber 60 so as to follow the wall surface of the transfer chamber 60 . Since the cooling coil 72 is arranged along the inner wall surface of the transfer chamber 60, the surface area of the cooled portion can be increased, the cooling efficiency is increased, and the probability of trapping moisture by the cooling coil 72 is reduced. can be increased

Both ends of the cooling coil 72 pass through the wall surface of the transfer chamber 60 and communicate with the external refrigerator 71 . The refrigerator 71 includes a compressor or a compressor, and can flow the cooled refrigerant to the cooling coil 72 .

[Gas analysis device]

The gas analyzer 80 is a device for measuring component amounts of gas in the chamber 10 . The gas analyzer 80 is, for example, a mass spectrometer that measures the mass of molecules or ions in the gas in the chamber 10, and uses, for example, a quadrupole mass spectrometer. As shown in FIG. 1 , the gas analyzer 80 is provided in a section of the chamber 10 to which the transfer chamber 60 is connected. In addition to the mass spectrometer, the gas analyzer 80 includes a calculation unit that converts the measured mass into partial pressures of each component in the chamber 10, and displays the converted partial pressures of each component in time series. A display unit may be provided.

Among the components in the gas, water (H ₂ O) and its related components, hydrogen (H ₂ ) and hydroxyl group (-OH), affect film formation and the degree of vacuum, so it is desirable to remove them. These components are hereinafter referred to as moisture-related components.

[control part]

The controller 90 includes an exhaust unit 20, a sputter gas introduction unit 419, a process gas introduction unit 428, a power supply unit 416, an RF power supply 424, a transfer unit 30, a gate valve GV1, and a transfer unit. Various elements constituting the film forming apparatus 1, such as the chamber 60, the gate valve GV2, the load-lock unit 62, and the cooling device 70, are controlled. This control unit 90 is a processing device including a PLC (Programmable Logic Controller) or a CPU (Central Processing Unit), and a program describing control contents, set values, threshold values, and the like are stored therein.

Specifically, the controlled contents include the initial exhaust pressure of the film forming apparatus 1, the power applied to the target 412 and the antenna 423, the flow rates of the sputter gas G1 and the process gas G2, introduction time and exhaust time, The film formation time, the rotation speed of the motor 32, etc. are mentioned. In this way, the controller 90 can respond to a wide variety of film formation specifications.

In addition, the control unit 90 of the present embodiment includes introduction of the process gas G2, application of electric power to the antenna 423, opening and closing of the gate valves GV1 and GV2, temperature of the cooling coil 72, vacuum pump ( By controlling the operation of 107, moisture in the chamber 10 is removed. Also, the control unit 90 controls the heating unit 420 based on the component amount of the gas measured by the gas analyzer 80 . That is, the control unit 90 monitors the mass of the moisture-related component measured by the gas analyzer 80 or the partial pressure based on the mass, and when it is below a predetermined threshold value, the plasma of the heating unit 420 to perform feedback control to stop the

In the following description, "opening the gate valve GV1" means that the controller 90 controls the gate opening/closing mechanism 103 to move the door 104 in a direction away from the carry-in/out port 102. By doing so, the carry-in/out port 102 is opened, and the chamber 10 and the transfer chamber 60 are communicated with each other. In addition, "closing the gate valve GV1" means that the control unit 90 controls the gate opening/closing mechanism 103 to move the door 104 in a direction bringing the door 104 closer to the loading/unloading port 102 to seal the member ( By pressing against 105, the carry-in/out port 102 is closed, and the space between the chamber 10 and the transfer chamber 60 is separated.

Further, "opening the gate valve GV2" means that the control unit 90 controls the gate opening/closing mechanism 110 to move the door 111 away from the loading/unloading port 108 to move the loading/unloading port. 108 is opened to make the transfer chamber 60 and the load lock portion 62 communicate with each other. In addition, "closing the gate valve GV2" means that the control unit 90 controls the gate opening/closing mechanism 110 to move the door 111 in a direction bringing it closer to the loading/unloading port 108, thereby causing the sealing member ( By pressing against 112, the carry-in/out port 108 is closed, and the space between the transfer chamber 60 and the load-lock portion 62 is separated.

[movement]

Next, the entire operation of the film forming apparatus 1 controlled by the controller 90 will be described. 6 is a timing chart showing the operation of each element in a series of steps including maintenance, heat treatment, and film formation.

(maintenance)

In the maintenance shown in FIG. 6(1), an operation of removing and attaching the anti-chak plate 50 from the chamber 10 is performed, the chamber 10 is open to the atmosphere, and the pressure in the chamber 10 becomes atmospheric pressure. there is. In the next heat treatment, in the chamber 10, a new attachment prevention plate 50 or a cleaning prevention board 50 is installed. At this time, the workpiece W is not mounted on the rotary table 31 . In addition, the tray 34 does not need to be arranged in the holding part 33 of the rotary table 31.

(heat treatment)

First, the operation of the heat treatment for dehumidification of the anti-chak plate 50 will be described with reference to a flowchart in FIG. 3 and (2) in FIG. 6 . A method of dehumidifying by heat treatment in the following procedure is also one aspect of the present invention. First, with the gate valve GV2 closed, the gate valve GV1 between the chamber 10 and the transfer chamber 60 is opened to start exhausting by the exhaust unit 20 (exhaust start process: Step S101). Thereby, as shown in (2) of FIG. 6, the inside of the transfer chamber 60 together with the inside of the chamber 10 is reduced in pressure. In addition, cooling and exhausting of the transfer chamber 60 by the cooling device 70 are also started (cooling start process: step S102). Further, the turntable 31 starts to rotate (turntable rotation start process: step S103). For example, the rotary table 31 rotates at about 60 rpm.

The process gas introduction unit 428 starts introduction of argon gas and oxygen gas into the processing space 42 of the heating unit 420 (process gas introduction step: step S104). At this time, as shown in (2) of FIG. 6, the pressure in the chamber 10 rises slightly due to gas introduction. Then, when the RF power supply 424 of the plasma generator is turned ON (high frequency power is applied), the process gas G2 introduced into the processing space 42 is converted into plasma (plasma generating process: step S105). For example, the RF power source 424 applies high frequency power of 9 kW or more to the antenna 423 . Accordingly, an electric field generated by the antenna 423 is generated in the processing space 42 through the window member 422 . Then, the process gas G2 supplied to the processing space 42 is excited by this electric field to generate plasma.

Due to the heat of the plasma, the rotary table 31 passing through the processing space 42 is heated by radiant heat. The rotary table 31 is heated each time it passes through the processing space 42, and heat is diffused throughout the rotary table 31 by heat conduction. Then, as the heated rotary table 31 also passes through other spaces within the chamber 10, the inside of the chamber 10 is heated through the rotary table 31, and moisture from the inner wall of the chamber 10, the anti-chak plate 50, etc. Since the related component is separated, the moisture related component in the chamber 10 temporarily increases. The heating temperature in the chamber 10 may be a temperature equal to or higher than the boiling point according to the vapor pressure curve of water according to the pressure in the chamber 10 . In this embodiment, after the exhaust is started, heating in the chamber 10 described above is started, and since the boiling point of water in the chamber 10 is lowered, moisture evaporates at a temperature lower than the boiling point of water at atmospheric pressure. elimination is promoted. When performing reliable evaporation of water, it is preferable to heat to 80 degreeC or more, for example. Heating by the heat of the plasma is continued until the measured value of the partial pressure of the water-related component measured by the gas analyzer 80 becomes equal to or less than a predetermined threshold value (NO in step S106).

During this heat treatment, the gate valve GV1 between the transfer chamber 60 and the chamber 10 remains open. That is, the heat treatment is performed in a state where the transfer chamber 60 and the chamber 10 communicate with each other. Since the transfer chamber 60 and the chamber 10 communicate with each other as one space, components related to moisture in the chamber 10 that have separated from members in the chamber 10 where the heat treatment is being performed are transferred to the transfer chamber 60. captured by the cooling device 70 in For this reason, the measured value of the moisture-related component, which has once risen, decreases with the passage of time. Thereby, as shown in (2) of FIG. 6, the pressure inside the chamber 10 is reduced. When the measured value of the moisture-related component is below the threshold value (YES in step S106), the process gas introduction unit 428 stops introduction of the process gas G2 (process gas stop process: step S107), and the RF power supply Plasmaization is stopped when 424 turns OFF (application of high-frequency power is stopped) (plasma stopping process: step S108). Further, the introduction of the oxygen gas may be stopped after the argon gas is stopped and the plasma conversion is stopped. Further, the rotation table 31 is stopped (rotation table rotation stopping process: step S109). After that, the gate valve GV1 of the transfer chamber 60 is closed. Exhaust by the exhaust unit 20 is continuously performed until the film formation process is started and after the film formation process is started.

(film forming process)

Next, the operation of the film forming process on the workpiece W will be described. In addition, before the film formation process, with the gate valve GV1 closed, the transfer device 106 carries the tray 34 on which the workpiece W is loaded from the load lock portion 62 into the transfer chamber 60, It is assumed that the work W and the tray 34 are dehumidified by the cooling device 70 .

First, as shown in (3) of FIG. 6 , the tray 34 on which the workpiece W is mounted is sequentially carried into the chamber 10 from the transfer chamber 60 by the transfer device 106 . The holding part 33 individually holds the trays 34 carried in by the conveying device 106, so that the trays 34 on which the workpieces W are mounted are all disposed on the rotary table 31. do.

Then, as shown in (4) of FIG. 6 , when the inside of the chamber 10 is depressurized to a predetermined pressure by the exhaust unit 20, the rotary table 31 on which the workpiece W is loaded is It rotates and reaches a predetermined rotational speed. When the predetermined rotational speed is reached, film formation on the workpiece W by the film formation processor 410 starts. That is, the sputtering gas inlet 419 supplies the sputtering gas G1 to the processing space 41 through the gas inlet 417 . The power supply unit 416 applies a voltage to the target 412 to turn the sputter gas G1 into plasma. Ions generated by the plasma collide with the target 412 to eject particles. On the untreated work W, when passing through the film forming unit 410, a thin film having particles deposited on the surface thereof is formed.

In this way, the thin film is oxidized in the process of passing through the film forming processing unit 410 by rotation of the rotary table 31 and passing through the heating unit 420 on which the thin film is formed. That is, the process gas inlet 428 supplies the process gas G2 containing oxygen gas to the processing space 42 through the gas inlet 426 . Then, chemical species of oxygen generated by the plasma collide with the thin film on the work W, so that the thin film becomes an oxide film. Moreover, as shown in (4) of FIG. 6, the pressure in the chamber 10 rises slightly by introduction of the sputtering gas G1 and the process gas G2.

In this way, when the workpiece W passes through the processing space 41 of the operating film forming unit 410, the film forming process is performed, and the workpiece W moves through the processing space 42 of the operating heating unit 420. Oxidation treatment is performed by passing through. In addition, “operating” is synonymous with the fact that plasma generation operation for generating plasma is being performed in the processing spaces 41 and 42 of each processing unit.

The rotation table 31 continues to rotate until an oxide film having a predetermined thickness is formed on the workpiece W, that is, until a predetermined time obtained in advance through simulation, experiment, or the like elapses. When the predetermined time has elapsed, the operation of the film forming unit 410 is first stopped, and then the operation of the heating unit 420 is stopped. Then, the rotation of the rotary table 31 is stopped. After that, as shown in (5) of FIG. 6 , the pressure in the chamber 10 decreases due to stoppage of introduction of the sputter gas G1 and the process gas G2. Then, the tray 34 on which the work W is loaded is discharged from the chamber 10 to the transfer chamber 60 by opening the gate valve GV1. Further, the gate valve GV1 is closed, the gate valve GV2 is opened, and the tray 34 on which the work W is loaded is discharged to the outside through the load lock portion 62 .

[action effect]

(1) As described above, the film forming apparatus 1 according to the present embodiment includes a chamber 10 capable of vacuuming the inside, an exhaust unit 20 for exhausting the inside of the chamber 10, and the chamber 10 ) and a plurality of plasma processing units 40 that are provided in the chamber 10 and perform plasma processing on the workpiece W that is circularly conveyed, and a conveyance unit 30 that circulatively conveys the workpiece W by a rotation table 31 provided in the chamber 10. ) has

The plurality of plasma processing units 40 each have processing spaces 41 and 42 in which plasma processing is performed, and at least one of the plurality of plasma processing units 40 forms a film by sputtering on the workpiece W to be circularly conveyed. It is a film forming processing unit 410 that performs processing, and at least one of the plurality of plasma processing units 40 is in a state in which the film forming processing by the film forming processing unit 410 is not performed, and the exhaust unit 20 exhausts and rotates the table 31 It is a heating unit 420 that removes moisture in the chamber 10 by generating plasma and heating the inside of the chamber 10 through the rotary table 31 along with the rotation of ).

Further, in the method for removing moisture in the film forming apparatus 1 according to the present embodiment, the exhaust start step in which the exhaust unit 20 starts exhausting the chamber 10 and the rotation start in which the rotary table 31 starts rotating A process gas introduction process in which the process gas introduction unit 428 introduces the process gas G2 into the processing space 42, and a plasma generator converts the process gas G2 in the processing space 42 into plasma. process, a process gas introduction unit 428 stopping the introduction of the process gas G2, and a plasma generator stopping the process gas G2 in the processing space 42 from being converted into plasma; , a rotation stop step in which the rotation table 31 stops rotation.

In this way, by heating the inside of the chamber 10 through the rotary table 31 with the heat of the plasma, removal of moisture in the chamber 10 can be promoted. Thereby, the degree of vacuum in the chamber 10 can be improved at an early stage. For example, in this embodiment, a degree of vacuum of about 5×10 ^-5 Pa can be achieved in about 3 hours. Since the degree of vacuum in the high vacuum region required for such a film formation process by sputtering can be quickly reached, film formation with stable and dense film quality can be performed with high productivity. In the case of reducing pressure only by exhausting, since it would take several days to realize such a degree of vacuum, the time is greatly shortened. In addition, since it is not necessary to provide a heating device for each of the plurality of plasma processing units 40, the cost can be reduced without complicating the configuration of the device.

Heating is also possible by generating plasma in the film forming unit 410 . However, when the film forming processing unit 410 is operated, the target 412 is consumed, and the replacement frequency of the target 412 is increased. In addition, reattachment of the film forming material in the chamber 10 will occur. In this embodiment, since plasma is generated and heated by a heating unit 420 separate from the film forming processing unit 410, the target 412 is not consumed and the film forming material does not adhere. In addition, the rotary table 31 has a roughness enough to capture the film-forming material so as not to adhere to the workpiece W, but traps moisture when released to the atmosphere for maintenance. By rotating the rotary table 31 when heating the processing space 42, the rotary table 31 is heated without omission, and moisture adhering to the surface of the rotary table 31 can be released.

(2) The film forming apparatus 1 has an anti-attachment plate 50 provided in the chamber 10 so as to be detachable and preventing film formation material scattering from the film forming unit 410 from adhering to the inside of the chamber 10 . For this reason, by washing the attachment prevention plate 50 with the film formation material, placing it in the chamber 10, and performing the above-described heating, moisture from all the attachment prevention plates 50 after washing can be collectively removed at an early stage. As a result, the environment in the chamber 10 is maintained in a clean state free of moisture and residual adhesion of film forming materials, and stable film formation can be performed.

(3) The film forming apparatus 1 has a cooling device 70 that removes moisture in the gas exhausted from the chamber 10 by cooling the gas exhausted from the chamber 10 . Since moisture is captured by the cooling device 70 in this way, the moisture can be removed at a higher speed.

(4) A transfer chamber 60 for carrying in and out of the workpiece W into and out of the chamber 10 is connected to the chamber 10 via a gate valve GV1, and a cooling device ( 70) is provided. For this reason, in the transfer chamber 60 separate from the heated chamber 10, the cooling device 70 cools and captures moisture, suppressing the effect of heat in the chamber 10 and lowering the cooling capacity. can be prevented from causing In addition, the transfer chamber 60 is isolated from the chamber 10 during film formation time by closing the gate valve GV1. For this reason, even if the inside of the chamber 10 is heated again by the plasma of the film forming unit or the film processing unit during the film forming process, the water trapped in the cooling device 70 of the transfer chamber 60 is separated and released into the chamber 10. does not exist. Accordingly, it is possible to prevent an increase in moisture-related components in the chamber 10 during the film forming process.

(5) The heating unit 420 includes a process gas introduction unit 428 that introduces the process gas G2 into the processing space 42 and an inductively coupled plasma into the processing space 42 into which the process gas G2 is introduced. It has a plasma generator that generates.

Since the plasma generated in the processing space 42 is an inductively coupled plasma generated by the antenna 423, damage to the rotary table 31 or the like and contamination by generated particles can be prevented. That is, for example, when plasma is generated by applying a high-frequency voltage to an electrode serving as an anode by using the electrode provided in the chamber 10 and the rotary table 31 as a pair of electrodes, the rotary table acting as a part of the cathode ( A bias voltage is applied to 31) so that ions are drawn in and the surface of the rotary table 31 is sputtered (etched). For this reason, the rotary table 31 is damaged, and particles generated by sputtering are scattered. In this embodiment, since the plasma generated in the processing space 42 is inductively coupled plasma generated by electromagnetic induction by applying a high-frequency voltage to the antenna 423, no bias voltage is applied to the rotary table 31, and ions Since sputtering caused by this can be suppressed, damage to the rotary table 31 can be suppressed. For example, the etching rate by inductively coupled plasma is about 1/10 of that of the tubular electrode.

(6) The film forming apparatus 1 includes a gas analyzer 80 that measures the component amount of the gas contained in the exhaust gas from the chamber 10, and based on the component amount of the gas measured by the gas analyzer 80, , and a control unit 90 that controls the heating unit 420. For this reason, at an appropriate timing when the amount of the moisture-related component is sufficiently reduced, the heat treatment can be stopped and the film forming treatment can be performed.

(7) The heating unit 420 is a film processing unit that performs film processing on a film formed on the workpiece W that is circularly conveyed by the rotary table 31 . For this reason, there is no need to provide the heating unit 420 separately from the film processing unit, and the device configuration can be simplified.

[Other Embodiments]

Although the embodiment of the present invention and the modified example of each part have been described, this embodiment and the modified example of each part are presented as examples and are not intended to limit the scope of the invention. These novel embodiments described above can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and variations thereof are included in the scope and gist of the invention, and are included in the invention described in the claims.

For example, it is not necessary to provide the transfer chamber 60. That is, the effect of dehumidification is also obtained by exhausting moisture generated in the chamber 10 by heating through the exhaust unit 20 of the chamber 10 . Thereby, it is made into a more simple structure, and cost can be suppressed. In this case, the cooling device 70 may be omitted. However, the cooling device 70 may be provided in the chamber 10 . For example, the speed of dehumidification may be increased by providing the cooling device 70 in the exhaust unit 20 .

Although the cooling device 70 has a refrigerator and a cooling coil through which a refrigerant flows, it is not limited thereto, and may be a cooling plate having a Peltier element. The cooling device 70 may be cooled to a temperature sufficient to freeze and adsorb moisture.

It is not necessary to provide the gas analyzer 80. That is, control may be used to stop heating when a predetermined time obtained in advance through simulation, experiment, or the like has elapsed since the start of heating. In this case, the "predetermined time" can be a time during which moisture-related components are removed to the extent that they do not affect film formation, or a time during which a vacuum degree that can be determined in advance before introducing the sputter gas G1 is reached. In addition, the control unit 90 does not perform feedback control to stop the plasma of the heating unit 420 based on the component amount of the gas measured by the gas analyzer 80, but the operator controls the display unit of the gas analyzer 80. Heating may be stopped judging from the mass displayed in , or the partial pressure based on the mass.

In addition, since the pressure in the chamber 10 is reduced together with the removal of the moisture-related component, when the measured value of the moisture-related component is below the threshold value, the pressure in the chamber 10 is also reduced by the sputtering gas (G1) during the film formation process. ) and a pressure in a predetermined high vacuum region before introduction of the process gas G2 (about 1×10 ^-4 ). For this reason, a pressure gauge for measuring the pressure in the chamber 10 may be provided instead of the gas analyzer 80, and heating may be stopped when the pressure in the chamber 10 measured by the pressure gauge falls below a threshold value. . Alternatively, a pressure gauge may be used together with the gas analyzer 80 to stop heating when both the measured value of the moisture-related component and the measured value of the pressure in the chamber 10 fall below the threshold value.

In addition, as the moisture-related component detected by the gas analyzer 80, at least one of water (H ₂ O), hydrogen (H ₂ ), and hydroxyl group (-OH) may be used.

In the heat treatment, in order to suppress damage caused by sputtering of the rotary table 31 by ions present in plasma, a substrate different from the workpiece W, for example, a dummy substrate made of quartz or the like may be mounted. Further, as the gas used as the process gas G2, only one of argon gas, nitrogen gas, and oxygen gas may be used. For example, by using only oxygen gas, sputtering can be suppressed compared to the case where argon gas is used. Further, as the process gas G2, any gas other than the gases exemplified above may be used as long as it can generate plasma. In addition, the flow rate of the process gas G2 may be the same or different in the heating process and the film formation process.

When the plasma generation operation is stopped, for example, in the above-described embodiment, when at least one operation of introduction of the process gas G2 by the process gas introduction unit 428 or application of voltage by the RF power supply 424 is stopped. good night. Further, although the cooling start process and the rotation start process are exemplified after the exhaust start process, these may be performed simultaneously, or the order may be changed. That is, the order of each process of heat treatment is not limited to what was illustrated above.

The number of plasma processing units 40 and the number of film forming units 410 and heating units 420 included therein are not limited to the numbers exemplified above. The number of the film forming unit 410 and the heating unit 420 may be singular or plural, respectively. A plurality of film formation processing units 410 made of different types of target materials may be provided, and a structure capable of stacking multilayer films made of different types of materials may be used. A plurality of heating units 420 that perform different film treatments may be provided, and some or all of them may be used for dehumidification by heating to achieve faster dehumidification.

The gate valves GV1 and GV2 are provided with one door, for example, in the above-described embodiment, but the loading/unloading port 101 of the chamber 10, the loading/unloading port 102 of the transfer chamber 60, and the loading and unloading port. It may be provided so as to face each of the exit 108 and the carry-in/out port 109 of the load-lock part 62. That is, as long as it is a door capable of opening/separating the respective spaces of the chamber 10, the transfer chamber 60, and the load lock unit 62, it is not limited to those exemplified above.

1: film formation device 10: chamber
10a: ceiling 10b: inner bottom
10c: inner circumference 11: exhaust port
12: compartment 20: exhaust
30: transfer unit 31: rotary table
32: motor 33: holding unit
34: tray 40: plasma processing unit
41, 42: processing space 50: anti-chak plate
60: transfer chamber 62: load lock unit
70: cooling device 71: freezer
72: cooling coil 80: gas analysis device
90: control unit 101, 102, 108, 109: carry-in port
103, 110: gate opening and closing mechanism 104, 111: door
105, 112: sealing member 410: film forming unit
412: target 413: backing plate
414: electrode 416: power supply
417: gas inlet 418, 427: piping
419: sputter gas introduction unit 420: heating unit
421: cylindrical body 422: window member
423: antenna 424: RF power
425: matching box 426: gas inlet
428: process gas introduction

Claims (10)

A chamber capable of vacuuming the inside;
an exhaust unit for exhausting the inside of the chamber;
a conveyance unit for circularly conveying the work by means of a rotary table provided in the chamber;
A plurality of plasma processing units that are provided in the chamber and perform plasma processing on the work that is circularly conveyed.
with,
The plurality of plasma processing units each have a processing space in which plasma processing is performed,
At least one of the plurality of plasma processing units is a film forming unit that performs a film forming process by sputtering on the work that is circularly conveyed;
At least one of the plurality of plasma processing units generates plasma together with exhaust from the exhaust unit and rotation of the rotary table in a state where the work to be film-formed by the film-forming unit is not mounted on the rotary table. and a heating unit that removes moisture in the chamber by generating and heating the inside of the chamber through the rotary table. The film formation apparatus according to claim 1, further comprising a deposition-preventing plate which is detachably provided in the chamber and prevents adhesion of the film formation material scattering from the film formation processing unit into the chamber. The film forming apparatus according to claim 1 or 2, further comprising a cooling device that removes moisture in the gas released from the chamber by cooling the gas released from the chamber. The method according to claim 3, wherein a transfer chamber for carrying in and out of the work into and out of the chamber is connected to the chamber through a gate valve,
The film forming apparatus characterized in that the cooling device is provided in the transfer chamber. The cooling device according to claim 4, wherein the cooling device includes a cooling coil through which a refrigerant is circulated and a refrigerator,
The film forming apparatus according to claim 1, wherein the cooling coil is disposed along a wall surface inside the transfer chamber. 5. The film forming apparatus according to claim 4, wherein the heating by the heating unit is performed in a state where the gate valve of the transfer chamber is opened. The method of claim 1, wherein the heating unit,
a process gas introduction unit introducing a process gas into the processing space;
and a plasma generator for generating inductively coupled plasma in the processing space into which the process gas is introduced. The method of claim 1, further comprising: a gas analyzer for measuring component amounts of gas contained in the exhaust gas from the chamber;
and a control unit for controlling the heating unit based on the component amount of the gas measured by the gas analyzer. The film forming apparatus according to claim 1, wherein the heating unit is a film processing unit that performs film processing on a film formed on the work that is circularly conveyed by the rotary table. A method for removing moisture in a film forming apparatus using the film forming apparatus according to claim 1, comprising:
an exhaust start step in which the exhaust unit starts exhaust of the chamber;
A rotation start step of starting rotation of the rotary table;
A process gas introduction step in which a process gas introduction unit introduces a process gas into a processing space;
a plasma generating step in which a plasma generator converts the process gas in the processing space into plasma in a state where a workpiece to be processed is not mounted on the rotary table;
a process gas stopping step of stopping the introduction of the process gas by the process gas introducing unit;
a plasma stop step in which the plasma generator stops turning the process gas into plasma in the processing space;
Rotation stop process of stopping the rotation of the rotary table
A method for removing moisture in a film forming apparatus comprising a.

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