TWI810526B - Film forming device and method for removing water from film forming device - Google Patents

Abstract

The present invention provides a film forming device and a method for removing water in a film forming device that can promote removal of water in a chamber without complicating the device. The film forming apparatus according to the embodiment has a chamber 10 capable of vacuuming the interior, an exhaust unit 20 for exhausting the inside of the chamber 10 , a transport unit 30 for circulatively transporting the workpiece W using a turntable 31 , and a vacuum unit for transporting the work W after circulation. A plurality of plasma processing units 40 for plasma processing the workpiece W, the plurality of plasma processing units 40 respectively have a processing space 41 and a processing space 42 for performing plasma processing, at least one of the plurality of plasma processing units 40 is The film-forming processing part 410 performs film-forming processing on the workpiece W after circulating conveyance by sputtering, and at least one of the plurality of plasma processing parts 40 is a heating part 420 that does not perform film-forming In the state of the film formation process in the processing unit 410 , plasma is generated along with the exhaust by the exhaust unit 20 and the rotation of the turntable 31 , and the inside of the chamber 10 is heated via the turntable 31 to remove moisture.

Description

Film forming device and method for removing water from film forming device

The invention relates to a film forming device and a water removal method of the film forming device.

In the manufacturing steps of various products such as semiconductor devices, liquid crystal displays, organic electroluminescence (EL) displays, and optical disks, thin films such as optical films are sometimes formed on workpieces such as wafers or glass substrates. The thin film can be formed by forming a film of metal or the like on a workpiece, or performing film processing such as etching, oxidation, or nitriding on the formed film.

Film formation or film treatment can be performed by various methods, one of which is a method of generating plasma in a chamber decompressed to a predetermined vacuum degree and performing treatment using the plasma. In the film-forming process, an inert gas is introduced into a chamber in which a target including a film-forming material is arranged, and a DC voltage is applied to the target. The plasma-formed inert gas ions collide with the target, and the film-forming material knocked out from the target is deposited on the workpiece to form a film. Such a film-forming process is called sputtering. In film processing, a process gas is introduced into a vacuum chamber in which electrodes are placed, and a high-frequency voltage is applied to the electrodes. Film processing is performed by colliding active species such as ions and radicals of the plasma-formed process gas with the film on the workpiece.

In order to continuously perform such film formation and film processing, a rotary table as a rotating body is installed inside a chamber, and a plurality of film formation units and film processing units are arranged in the circumferential direction above the rotary table. Processing device. The unit for film formation and the unit for film processing have respectively divided processing chambers (film formation chamber, film processing chamber). Each processing chamber is opened downward toward the turntable, and a workpiece is held on the turntable and conveyed, passing directly under the plurality of processing chambers, thereby forming a thin film such as an optical film.

[Prior art literature]

[Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. 2005-352018

[Patent Document 2] Japanese Patent Laid-Open No. 2010-225847

As the film-forming process continues, the film-forming material scattered from the film-forming unit accumulates in various places in the chamber of the above-mentioned film-forming apparatus. When the deposited film-forming material peels off, the workpiece to be film-formed becomes contaminated. However, in cases where the membrane is directly attached to the inner wall of the chamber or the turntable, it is very difficult to remove the membrane. Therefore, the adhesion preventing plate is detachably provided so as to cover the inner wall of the chamber, the surface of the turntable, and the like. The anti-adhesion plate prevents the film-forming material from adhering to the inner wall of the chamber or the surface of the turntable by adhering the film-forming material scattered during the film-forming process.

Such an anti-adhesion plate needs to be disassembled and cleaned (maintained) in order to prevent the adhered film from peeling off and contaminating the workpiece after continuous film-forming treatment. For example, the chamber Open to the atmosphere, remove the anti-adhesion plate from the chamber, remove the film accumulated on the surface by sandblasting, and then clean it with pure water. After washing and drying, it is transported to a film forming apparatus in a vacuum-packed state, and after unpacking, it is installed in a film forming apparatus again to perform film formation.

Here, when film formation is performed by sputtering, the chamber of the film formation apparatus is depressurized to a high vacuum region. Thereby, impurities existing in the chamber can be reduced, and gas molecules can be reduced, so that the mean free path becomes larger. As a result, the film-forming material knocked out from the target reaches the workpiece, forming a dense film stably. However, immediately after the anti-adhesion plate is replaced, the state in which the degree of vacuum in the chamber does not rise even if the film formation apparatus is operated and the chamber is evacuated and decompressed continues for a long time. This is because moisture remains inside the antiadhesive plate when the antiadhesive plate has been washed and dried, and a large amount of water continues to be generated from the antiadhesive plate as the chamber is depressurized.

Furthermore, if the inside of the chamber is opened to the atmosphere during maintenance or the like, moisture contained in the atmosphere will be adsorbed on walls and various members inside the chamber. Therefore, not only the anti-adhesion plate, but also all members in the chamber exposed to the atmosphere need to remove moisture.

Since moisture is gradually evaporated and exhausted by reducing the pressure in the chamber, this state improves as film formation continues. However, since the number and area of members containing moisture are very large, including the anti-adhesion plate installed in the chamber, the amount of moisture generated also increases. Therefore, it is difficult to completely remove moisture in a short time to obtain a degree of vacuum required for processing. For example, it may take several days to several weeks until the film-forming state is reached. Therefore, after maintenance is performed by opening the chamber to the atmosphere, or after the anti-adhesion plate is replaced, the period in which the film cannot be formed continues for a long time, resulting in lead to reduced productivity. In addition, if the film is formed in a state where moisture remains, there is a possibility that roughness or defects on the film surface after film formation may adversely affect the film formation.

In order to cope with this situation, a method of installing a heating device such as an infrared lamp in the chamber (Patent Document 1), or a method of introducing heated gas to heat members in the chamber to promote evaporation of water (Patent Document 2) has been proposed. However, in a batch-type film-forming apparatus that performs processing in a plurality of processing chambers while rotating and conveying workpieces, installing a heating device in each processing chamber or introducing heated inert gas complicates the structure of the apparatus and increases costs.

Regarding the anti-adhesion plates, it is also considered to put them in a heating furnace to dehumidify (evaporate moisture) before installing them in the chamber, but each of the anti-adhesion plates is large and there are many, so it is possible to store all the anti-adhesion plates and dehumidify together Furnaces are not practical. In addition, even if it is dehumidified in advance, it will be exposed to the atmosphere when it is installed in the chamber, so moisture will be absorbed again.

The present invention was made to solve the above problems, and an object of the present invention is to provide a film-forming apparatus and a method for removing water in a film-forming apparatus that can promote water removal in a chamber without complicating the apparatus.

In order to achieve the above object, the film forming apparatus of the present embodiment has: a chamber capable of making the inside vacuum; an exhaust unit for exhausting the inside of the chamber; and a plurality of plasma processing units, which are arranged in the chamber and perform plasma treatment on the workpiece after cyclic transport, and each of the plurality of plasma processing units has a plasma processing unit. processing space, at least one of the plurality of plasma processing units is a film-forming processing unit that performs film-forming processing on the workpiece that has been conveyed in circulation by sputtering, and at least one of the plurality of plasma processing units One is a heating unit that generates heat in response to exhaust by the exhaust unit and rotation of the turntable in a state where the film formation process by the film formation process unit is not performed. The plasma heats the inside of the chamber via the rotary table, thereby removing moisture in the chamber.

In addition, the water removal method of the film forming device of the present invention includes: an exhaust start step, the exhaust unit starts the exhaust of the chamber; a rotation start step, the turntable starts to rotate; introducing a process gas; a plasma generation step, a plasma generator plasmating the process gas in the processing space; a process gas stop step, the process gas introduction part stopping the introduction of the process gas; a plasma stop step , the plasma generator stops the plasmaization of the process gas in the processing space; and a rotation stop step, the rotation of the rotary table is stopped.

According to the present invention, it is possible to provide a film-forming device and a method for removing water in a film-forming device that can promote water removal in a chamber without complicating the device.

1: Film forming device

10: chamber

10a: ceiling

10b: inner bottom surface

10c: inner peripheral surface

11: Exhaust port

12: Division

20: exhaust part

30: Moving Department

31: Rotary table

32: motor

33: Keeping Department

34: tray

40: Plasma Processing Department

41, 42: Processing space

50: Anti-adhesion plate

60: transfer chamber

62:Load lock unit

70: cooling device

71: Freezer

72: cooling coil

80: Gas analysis device

90: Control Department

101, 102, 108, 109: import and export

103, 110: gate opening and closing mechanism

104, 111: door

105, 112: sealing member

106: Handling device

107, 113: vacuum pump

410: Film Formation Treatment Department

412: target

413: Backplane

414: electrode

416: Power supply department

417: gas inlet

418, 427: Piping

419: Sputtering gas introduction part

420: heating part

421: cylinder

422: window components

423: Antenna

424: RF power supply

425:Matchbox

426: gas inlet

428: Process gas introduction department

G1: sputtering gas

G2: Process gas

GV1, GV2: gate valve

L: transport path

S101~S109: steps

W: Workpiece

FIG. 1 is a perspective plan schematically showing the structure of a film forming apparatus according to this embodiment. face map.

FIG. 2 is a sectional view taken along line A-A in FIG. 1 , and is a detailed view of the internal structure viewed from the side of the film formation apparatus according to the embodiment shown in FIG. 1 .

FIG. 3 is a flow chart of moisture removal processing by heating in the film forming apparatus according to the present embodiment.

FIG. 4 is a cross-sectional view schematically showing the structure of a part of the film forming apparatus according to the present embodiment.

FIG. 5 is a cross-sectional view schematically showing the structure of a part of the film forming apparatus according to the present embodiment.

FIG. 6 is a timing chart showing the operation of each element from maintenance to film formation process of the film formation apparatus according to the present embodiment.

Embodiments of the film forming apparatus of the present invention will be described in detail with reference to the drawings.

[summary]

As shown in the perspective plan view of FIG. 1 and the sectional view of FIG. 2 , the film forming apparatus 1 is an apparatus for forming a film on a workpiece W by sputtering. The workpiece W refers to an object to be processed to be subjected to film formation processing. As the workpiece W, for example, a glass substrate, a wafer, or the like is used. Among them, the workpiece W may be used regardless of its shape or material, as long as it is a film-forming object to be processed by plasma. The film forming apparatus 1 has a chamber 10, an exhaust unit 20, a transport unit 30, a plasma processing unit 40, an anti-adhesion plate 50, and a transfer chamber. Chamber 60 , cooling device 70 , gas analysis device 80 , and control unit 90 .

The chamber 10 is a container whose interior can be evacuated. The exhaust unit 20 exhausts the inside of the chamber 10 . The conveying unit 30 conveys the workpiece W in circulation via the rotary table 31 provided in the chamber 10 . The plasma processing part 40 is provided in the chamber 10, and performs plasma processing on the workpiece|work W which circulated and conveyed. Plasma treatment is various treatments performed on a treatment object using plasmaized gas.

Plural plasma processing units 40 are provided. Each of the plurality of plasma processing units 40 has a processing space 41 for performing plasma processing. Three of the plurality of plasma processing units 40 are film-forming processing units 410 that perform film-forming processing on the workpiece W that has been conveyed in circulation by sputtering. One of the plurality of plasma processing units 40 is a heating unit 420 that is exhausted by the exhaust unit 20 in a state where the film formation process by the film formation treatment unit 410 is not performed. And the rotation of the turntable 31 generates plasma, and the inside of the chamber 10 is heated via the turntable 31 , thereby removing moisture in the chamber 10 .

The adhesion prevention plate 50 is detachably provided in the chamber 10 , and prevents the film-forming material scattered from the film-forming processing unit 410 from adhering in the chamber 10 . The transfer chamber 60 is a container for carrying the workpiece W into and out of the chamber 10 through the gate valve GV1 . The cooling device 70 is a device for removing moisture in the gas detached from the chamber 10 by cooling the gas detached from the chamber 10 . The cooling device 70 of this embodiment is installed in the transfer chamber 60 .

The gas analysis device 80 is a device for measuring the component amounts of the gas discharged from the chamber 10 . The control unit 90 controls the film formation processing unit 410 and the heating unit 420 based on the gas component amounts measured by the gas analyzer 80 .

[structure]

[Chamber]

As shown in FIG. 1 , the chamber 10 is a cylindrical container whose interior is partitioned by a partition 12 and divided into a plurality of sectors in the shape of a fan. The film formation processing part 410 is arrange|positioned in three blocks, and the heating part 420 is arrange|positioned in the other block. In addition, a transfer chamber 60 is connected to another one of the blocks.

As shown in FIG. 2 , the chamber 10 is surrounded by a disk-shaped ceiling 10a, a disk-shaped inner bottom surface 10b, and an annular inner peripheral surface 10c. The partition portion 12 is a square wall plate arranged radially from the center of the cylindrical shape, and extends from the ceiling 10a toward the inner bottom surface 10b without reaching the inner bottom surface 10b. That is, a cylindrical space is ensured on the side of the inner bottom surface 10b.

In addition, the chamber 10 is provided with the ceiling 10a in a detachable manner. Maintenance including cleaning of the inside of the chamber 10, attachment and detachment of the adhesion prevention plate 50, and the like can be performed by removing the ceiling 10a. The ceiling 10a is attached via a sealing member such as an O-ring not shown, thereby sealing the inside of the chamber 10 .

As shown in the sectional view of FIG. 5 , a loading and unloading port 101 for loading and unloading the workpiece W may be provided on a side wall of the chamber 10 . The loading and unloading port 101 faces the loading and unloading port 102 provided on the side wall of the transfer chamber 60 . The loading/unloading port 102 can be opened and closed by the gate valve GV1. The gate valve GV1 may be provided with a gate opening and closing mechanism 103 , a door 104 , and sealing members 105 such as an O-ring. The door 104 is moved up and down and opened and closed by the gate opening and closing mechanism 103 . When the door 104 is closed by the gate opening and closing mechanism 103, the sealing member 105 is pressed against the wall surface of the loading and unloading port 102, and the loading and unloading port 102 is closed. is hermetically sealed.

Returning to FIG. 1 , the partition unit 12 partitions a processing space 41 and a processing space 42 where plasma processing is performed. That is, the film formation processing part 410 and the heating part 420 are respectively smaller than the chamber 10, and have the processing space 41 and the processing space 42 isolated from each other. By dividing the processing space 41 and the processing space 42 by the partition part 12, the diffusion of the film formation material or gas from the film formation processing part 410 and the heating part 420 can be suppressed. As shown in FIG. 2 , a gap through which the workpiece W on the rotating turntable 31 can pass is formed between the lower end of the dividing portion 12 and the turntable 31 described later. That is, the height of the dividing portion 12 is set so that a slight gap is formed between the lower edge of the dividing portion 12 and the workpiece W. As shown in FIG.

[exhaust part]

The exhaust unit 20 has a negative pressure circuit including piping, pumps, valves and the like not shown. The exhaust part 20 is connected to the exhaust port 11 provided in the chamber 10 . The exhaust unit 20 depressurizes the inside of the chamber 10 to vacuum by exhausting through the exhaust port 11 .

[Transportation Department]

The conveying unit 30 has a rotary table 31 , a motor 32 , and a holding unit 33 , and circulates and conveys the workpiece W along a circumferential trajectory, that is, a conveyance path L (see FIG. 1 ). The mounting surface of the workpiece W of the rotary table 31 is disposed with a gap between the lower end of the partition 12 and the workpiece W through which the workpiece W passes. The turntable 31 has a disk shape, and is largely extended in the chamber 10 to such an extent that it does not come into contact with the inner peripheral surface 10c. The turntable 31 has a continuous surface so as to cover each processing space 41 in the chamber 10 in plan view.

The turntable 31 is made of metal, for example, stainless steel. Its surface is treated with a plasma-resistant surface treatment that prevents wear and tear caused by plasma.

The motor 32 continuously rotates at a predetermined rotation speed with the center of the turntable 31 as a rotation axis. The holding unit 33 is grooves, holes, protrusions, jigs, holders, etc. arranged at positions equidistant on the circumference on the upper surface of the turntable 31, and holds the tray 34 on which the workpiece W is placed by a mechanical chuck, an adhesive chuck, or the like. The pallet 34 is a member for conveying the workpiece W placed thereon. For example, the workpieces W are arranged in a matrix on the pallet 34 . Six holding units 33 of the present embodiment are arranged on the turntable 31 at intervals of 60°. However, the number of workpieces W and pallets 34 conveyed at the same time is not limited to this.

[Film Formation Processing Department]

The film formation processing unit 410 generates plasma, and exposes the target material 412 including the film formation material to the plasma. Thus, the film formation processing unit 410 performs film formation in which ions contained in the plasma collide with the film formation material, and the knocked out particles are deposited on the workpiece W. FIG. As shown in FIG. 2 , the film forming processing part 410 includes a plasma generator, and the plasma generator includes: a sputtering source having a target 412, a back plate 413 and an electrode 414, a power supply part 416, and a sputtering gas Import section 419 .

The target 412 is a plate-shaped member including a film-forming material deposited on the workpiece W to form a film. The target material 412 is spaced apart from the conveyance path L of the workpiece W placed on the turntable 31 . The surface of the target 412 is held on the ceiling 10 a of the chamber 10 so as to face the workpiece W placed on the rotary table 31 . Three targets 412 are arranged at the vertices of the triangle in plan view.

The back plate 413 is a supporting member that holds the target 412 . The back plate 413 individually holds the targets 412 . The electrodes 414 are used to control each target 412 from the outside of the chamber 10 The conductive member independently applies electric power and is electrically connected to the target 412 . The power applied to each target 412 can be varied individually. In addition, a magnet, a cooling mechanism, etc. are suitably contained in a sputtering source as needed.

The power supply unit 416 is, for example, a direct current (DC) power supply applying a high voltage, and is electrically connected to the electrode 414 . The power supply unit 416 applies electric power to the target 412 through the electrodes 414 . The turntable 31 has the same potential as the grounded chamber 10 , and a potential difference is generated by applying a high voltage to the target 412 side. Furthermore, the power supply unit 416 can also be a radio frequency (radio frequency, RF) power supply for high frequency sputtering.

As shown in FIG. 2 , the sputtering gas introduction part 419 introduces the sputtering gas G1 into the chamber 10 . The sputtering gas introduction part 419 has a supply source of the sputtering gas G1 such as a gas cylinder (not shown), a pipe 418 , and a gas introduction port 417 . The pipe 418 is connected to a supply source of the sputtering gas G1 , passes through the chamber 10 airtightly, extends to the inside of the chamber 10 , and has an end portion opened as a gas introduction port 417 .

The gas introduction port 417 opens between the turntable 31 and the target 412 , and introduces the sputtering gas G1 for film formation into the processing space 41 formed between the turntable 31 and the target 412 . As the sputtering gas G1, a rare gas can be used, preferably an argon (Ar) gas or the like.

In such a film formation processing unit 410 , the sputtering gas G1 is introduced from the sputtering gas introduction unit 419 , and the power supply unit 416 applies a high voltage to the target 412 through the electrode 414 . Then, the sputtering gas G1 introduced into the processing space 41 is turned into a plasma, and active species such as ions are generated. The ions in the plasma collide with the target material 412 to knock out the particles of the film-forming material.

The workpiece W circulated by the turntable 31 passes through the processing space 41 . The particles of the film-forming material knocked out accumulate on the workpiece W when the workpiece W passes through the processing space 41 , and a film formed of the particles is formed on the workpiece W. FIG. The workpiece W is conveyed circularly by the rotary table 31, and repeatedly passes through the processing space 41, whereby film formation processing is performed.

[heating part]

The heating unit 420 heats the inside of the chamber 10 by generating inductively coupled plasma (Inductively Coupled Plasma) in the processing space 42 into which the process gas G2 is introduced. In addition, the heating unit 420 of the present embodiment also functions as a film processing unit that performs film processing on a film formed on the workpiece W by the film formation processing unit 410 . The film treatment is a treatment for changing the properties of the film deposited by the film forming treatment, and includes treatments such as oxidation, nitriding, etching, and ashing. For example, when oxidation is performed as a film treatment, oxygen gas is converted into plasma to generate chemical species. Oxygen atoms contained in the generated chemical species collide with a film on the workpiece W to form an oxide film as a compound film.

As shown in FIG. 2 , the heating unit 420 has a plasma generator including a cylindrical body 421 , a window member 422 , an antenna 423 , an RF power supply 424 , a matching box 425 , and a process gas introduction unit 428 .

The cylindrical body 421 is a member covering the periphery of the processing space 42 . As shown in FIGS. 1 and 2 , the cylindrical body 421 is a tube having a rounded rectangular shape in horizontal section and has an opening. The cylindrical body 421 is fitted into the ceiling 10 a of the chamber 10 so that its opening faces away from the turntable 31 side, and protrudes toward the inner space of the chamber 10 . The cylindrical body 421 is made of the same metal as the turntable 31, and the surface is subjected to corrosion resistance etc. by yttrium oxide spraying or the like. Ionic properties, treatment to prevent adhesion of film-forming materials.

The window member 422 is a flat plate of a dielectric such as quartz having a substantially similar shape to that of the cylindrical body 421 in horizontal cross section. The window member 422 is provided to close the opening of the cylindrical body 421 , and separates the processing space 42 in the chamber 10 into which the process gas G2 is introduced, from the inside of the cylindrical body 421 . Furthermore, the window member 422 can be a dielectric such as alumina, or a semiconductor such as silicon.

The processing space 42 is formed between the turntable 31 and the inside of the cylindrical body 421 in the heating unit 420 . The upper surface of the turntable 31 repeatedly passes through the processing space 42 , whereby the temperature of the turntable 31 rises by radiation using plasma as a heat source, and the heat is also propagated to the surroundings. That is, the inside of the chamber 10 is heated via the turntable 31 by using the heat of the plasma. In addition, when film processing is performed by the heating unit 420 , the workpiece W circulated and conveyed by the rotary table 31 repeatedly passes through the processing space 42 , thereby performing film processing.

The antenna 423 is a conductive body wound in a coil shape, is arranged in the inner space of the cylindrical body 421 separated from the processing space 42 in the chamber 10 by the window member 422 , and generates an electric field when a current flows. The antenna 423 is desirably arranged near the window member 422 so that the electric field generated by the antenna 423 is efficiently introduced into the processing space 42 through the window member 422 . An RF power supply 424 for applying a high-frequency voltage is connected to the antenna 423 . A matching box 425 as a matching circuit is connected to the output side of the RF power supply 424 . The matching box 425 stabilizes plasma discharge by matching impedances on the input side and the output side.

As shown in FIG. 2 , the process gas introduction part 428 introduces process gas into the processing space 42. Process gas G2. The process gas introduction unit 428 has a supply source of the process gas G2 such as a gas cylinder (not shown), a pipe 427 , and a gas introduction port 426 . The pipe 427 is connected to a supply source of the process gas G2 , passes through the chamber 10 while being hermetically sealed, extends into the chamber 10 , and opens at its end as the gas introduction port 426 .

The gas introduction port 426 opens to the processing space 42 between the window member 422 and the turntable 31, and introduces the process gas G2. As the process gas G2, a rare gas can be used, preferably argon gas or the like. In addition, an oxygen (O ₂ ) gas is added to the process gas G2 of the present embodiment in addition to the argon gas.

In such a heating unit 420 , a high-frequency voltage is applied from an RF power source 424 to an antenna 423 . As a result, a high-frequency current flows through the antenna 423 to generate an electric field due to electromagnetic induction. An electric field is generated in the processing space 42 through the window member 422 to plasma the process gas G2 to generate inductively coupled plasma. The surface of the rotary table 31 passing through the processing space 42 is heated by the plasma.

In addition, when the film processing is performed by the heating unit 420 , chemical species of oxygen including oxygen ions are generated and collide with the film on the workpiece W to couple with atoms of the film material. As a result, the film on the workpiece W becomes an oxide film. The workpiece W circles around the chamber 10 several times in the circumferential direction, and alternately passes through the three film-forming treatment parts 410 and the heating part 420, and alternately repeats film-forming and film-processing on the workpiece W, so that the required thickness film growth. Therefore, the film formation apparatus 1 of the present embodiment is configured as a batch type apparatus capable of collectively forming a film on a plurality of workpieces W held by a plurality of holding units 33 .

[Anti-adhesion plate]

The adhesion prevention plate 50 is, for example, a metal plate. On the surface of the anti-adhesion plate 50, for example, a A plasma sprayed coating of aluminum or aluminum alloy is formed, and the surface is roughened by sandblasting or the like. Thereby, the adhesiveness with the deposited film is improved, and the peeling of a film material is suppressed.

The antiadhesion plate 50 is configured to cover, for example, the inner peripheral surface 10c of the chamber 10 by combining a plurality of them. In addition, although not shown, on the turntable 31 , an adhesion prevention plate 50 is also arranged at a location other than the tray 34 . The tray 34 also functions as an adhesion prevention plate 50 that prevents the film material from adhering to the turntable 31 . An antiadhesive plate 50 is also disposed on the side surface of the partition 12 . Furthermore, an adhesion prevention plate 50 is also provided around the target 412 in the processing space 41 of the film formation processing unit 410 . In this way, the anti-adhesion plate 50 is suitably arranged at a place where the film-forming material is likely to adhere.

[Transfer chamber]

As shown in FIGS. 1 and 4 , the transfer chamber 60 is a passage having an internal space for storing the workpiece W before being carried into the chamber 10 . The transfer chamber 60 is connected to the chamber 10 via the gate valve GV1. In the internal space of the transfer chamber 60, a conveyance device 106 for carrying in and carrying out the workpiece W between the chamber 10 and the chamber 10 is provided. The transfer chamber 60 is decompressed by the exhaust of the vacuum pump 107, and the pallet 34 carrying the unprocessed workpiece W is carried into the chamber 10 by the transport device 106 while maintaining the vacuum of the chamber 10, and the pallet 34 carrying the processed The pallet 34 of the completed workpiece W is carried out from the chamber 10 .

As shown in FIG. 5 , in the transfer chamber 60 , a loading/unloading port 108 for loading and unloading workpieces W may be provided on the side wall opposite to the side wall provided with the loading/unloading port 102 . The loading and unloading port 108 faces a loading and unloading port 109 provided on the side wall of the transfer chamber 60 of the load lock unit 62 described later. The loading/unloading port 108 can be opened and closed by the gate valve GV2. Gate valve GV2 can be provided with a gate opening and closing mechanism 110, a door 111, A sealing member 112 such as an O-ring. The door 111 is moved up and down and opened and closed by the gate opening and closing mechanism 110 . When the door 111 is closed by the gate opening and closing mechanism 110, the sealing member 112 is pressed against the wall surface of the loading/unloading port 108, and the loading/unloading port 108 is hermetically sealed.

As shown in FIG. 4 , a load lock unit 62 is connected to the transfer chamber 60 via a gate valve GV2 . The load lock unit 62 carries the tray 34 loaded with the unprocessed workpiece W into the transfer chamber 60 from the outside through the transfer device 106 while maintaining the vacuum state of the transfer chamber 60, and places the processed workpiece W loaded thereon. The tray 34 is carried out from the transfer chamber 60. Furthermore, the load lock unit 62 is decompressed by the exhaust of the vacuum pump 113 .

[cooling device]

As shown in FIGS. 1 and 4 , the cooling device 70 is connected to the transfer chamber 60 . The cooling device 70 has a refrigerator 71 and a cooling coil 72 , and is a device that condenses and captures moisture in the transfer chamber 60 in the cooling coil 72 cooled by the refrigerator 71 while being exhausted by the vacuum pump 107 . Since moisture is trapped as frost, a defrosting operation for removing frost from the coil is performed by maintenance of opening the transfer chamber 60 to the atmosphere.

The cooling coil 72 includes metal pipes such as copper, and a liquid or gas refrigerant flows through the inside. The refrigerant may be, for example, a gas such as a freon-based mixed gas. The refrigerant is cooled by the refrigerator 71 to an extremely low temperature (about -150° C. to -1° C.) below the freezing point, and passes through the inside of the cooling coil 72 . The cooling coil 72 is fixedly arranged inside the transfer chamber 60 along the wall surface of the transfer chamber 60 . By arranging the cooling coil 72 along the inner wall surface of the transfer chamber 60, the surface of the cooled portion can be increased. Product, improve the cooling efficiency, thereby can increase the cooling coil 72 to capture the probability of moisture.

Both ends of the cooling coil 72 penetrate the wall surface of the transfer chamber 60 and communicate with the external refrigerator 71 . The refrigerator 71 includes a compressor or a compressor, and can circulate cooled refrigerant through the cooling coil 72 .

[Gas analysis device]

The gas analysis device 80 is a device for measuring the component amounts of the gas in the chamber 10 . The gas analyzer 80 is, for example, a mass analyzer for measuring the mass of molecules or ions in the gas in the chamber 10 , for example, a quadrupole mass spectrometer (Quadrupole Mass Spectrometer) is used. As shown in FIG. 1 , the gas analysis device 80 is installed in a block of the chamber 10 connected to the transfer chamber 60 . Furthermore, the gas analysis device 80 may include, in addition to the mass analyzer, a calculation unit that converts the partial pressure for each component in the chamber 10 based on the measured mass, and displays the converted partial pressure for each component in time series. Press the display part.

Among the components in the gas, water (H ₂ O) and its related components, hydrogen (H ₂ ) and hydroxyl group (—OH), affect film formation and vacuum degree, so it is preferable to remove them. Hereinafter, these components are called moisture-related components.

[control department]

The control unit 90 controls the exhaust unit 20, the sputtering gas introduction unit 419, the process gas introduction unit 428, the power supply unit 416, the RF power supply unit 424, the transfer unit 30, the gate valve GV1, the transfer chamber 60, the gate valve GV2, the load lock unit 62, The cooling device 70 and the like constitute various elements of the film forming apparatus 1 . Described control part 90 is to comprise Programmable Logic Controller (Programmable Logic Controller, PLC) and Central Processing Unit (Central Processing Unit) Processing Unit (CPU) is a processing device that stores programs describing control content, setting values, thresholds, and the like.

Specific control contents include: the initial exhaust pressure of the film forming apparatus 1, the power applied to the target 412 and the antenna 423, the flow rates of the sputtering gas G1 and the process gas G2, the introduction time and exhaust time, and the film formation time. time, the rotational speed of the motor 32, and the like. Accordingly, the control unit 90 can cope with various film formation specifications.

In addition, the control unit 90 of the present embodiment controls the introduction of the process gas G2, the application of power to the antenna 423, the opening and closing of the gate valve GV1 and the gate valve GV2, the temperature of the cooling coil 72, and the operation of the vacuum pump 107 to remove dust from the chamber 10. moisture. Furthermore, the control unit 90 controls the heating unit 420 based on the gas component amounts measured by the gas analyzer 80 . That is, the control unit 90 monitors the mass of the moisture-related component measured by the gas analyzer 80 or the partial pressure based on the mass, and performs feedback control to stop the plasma in the heating unit 420 when it is equal to or less than a predetermined threshold.

Furthermore, in the following description, the so-called "opening the gate valve GV1" means that the control unit 90 controls the gate opening and closing mechanism 103 to move the door 104 in a direction away from the loading and unloading port 102, thereby opening the loading and unloading port 102 to form a communication chamber. The space between the chamber 10 and the transfer chamber 60. In addition, "closing the gate valve GV1" means that the control unit 90 controls the gate opening and closing mechanism 103 to move the door 104 in a direction close to the loading and unloading port 102 and press it against the sealing member 105, thereby closing the loading and unloading port 102 and closing the chamber 10. It is separated from the space of the transfer chamber 60 .

In addition, "opening the gate valve GV2" means that the control unit 90 controls the gate opening and closing mechanism 110 to move the door 111 away from the loading and unloading port 108, thereby opening and closing the gate valve GV2. The loading/unloading port 108 forms a space communicating with the transfer chamber 60 and the load lock unit 62 . In addition, the so-called "closing the gate valve GV2" means that the control unit 90 controls the gate opening and closing mechanism 110 to move the door 111 in a direction close to the loading and unloading port 108 and press it against the sealing member 112, thereby closing the loading and unloading port 108 and making the transfer chamber 60 is spaced apart from the load lock 62 .

[action]

Next, the overall operation of the film forming apparatus 1 controlled by the control unit 90 will be described. FIG. 6 is a timing chart showing the operation of each element in a series of steps including maintenance, heat treatment, and film formation.

(maintain)

In the maintenance shown in FIG. 6(1), the work of removing and/or attaching the antiadhesion plate 50 from the chamber 10 is performed, the chamber 10 is opened to the atmosphere, and the pressure in the chamber 10 becomes atmospheric pressure. In the next heat treatment, a new anti-adhesion plate 50 or a washed anti-adhesion plate 50 is installed in the chamber 10 . At this time, the workpiece W is not mounted on the rotary table 31 . Note that the tray 34 may not be placed on the holding portion 33 of the turntable 31 .

(heat treatment)

First, the operation of the heat treatment for dehumidifying the adhesion prevention plate 50 will be described with reference to the flowchart of FIG. 3 and FIG. 6(2). In addition, the method of dehumidifying by heat processing in the following procedure is also 1 aspect of this invention. First, with the gate valve GV2 closed, the gate valve GV1 between the chamber 10 and the transfer chamber 60 is opened to start exhaust by the exhaust unit 20 (exhaust start step: step S101). Thereby, as shown in FIG. 6(2), the inside of the chamber 60 is transferred together with the inside of the chamber 10, and the pressure is reduced. in addition, Cooling and exhausting of the transfer chamber 60 by the cooling device 70 are also started (cooling start step: step S102). Furthermore, the turntable 31 starts to rotate (turntable rotation start step: step S103). For example, the turntable 31 rotates at about 60 rpm.

The process gas introduction part 428 starts to introduce argon gas and oxygen gas into the processing space 42 of the heating part 420 (process gas introduction step: step S104 ). At this time, as shown in FIG. 6(2), the pressure in the chamber 10 is slightly increased by the gas introduction. Then, when the RF power supply 424 of the plasma generator is turned on (high-frequency power is applied), the process gas G2 introduced into the processing space 42 is converted into plasma (plasma generation step: step S105). For example, the RF power supply 424 applies high-frequency power of 9 kW or more to the antenna 423 . Thus, an electric field generated by the antenna 423 is generated in the processing space 42 via the window member 422 . Then, by the electric field, the process gas G2 supplied into the processing space 42 is excited to generate plasma.

Using the heat of the plasma, the rotary table 31 of the processing space 42 is heated by radiant heat. The turntable 31 is heated every time it passes through the processing space 42 , and heat is diffused to the entire turntable 31 through heat conduction. Then, the heated turntable 31 also passes through other spaces in the chamber 10, thereby heating the chamber 10 through the turntable 31, and moisture-related components are detached from the inner wall of the chamber 10, the anti-adhesion plate 50, etc., Accordingly, the moisture-related components in the chamber 10 temporarily increase. The heating temperature in the chamber 10 may be a temperature equal to or higher than the boiling point corresponding to the pressure in the chamber 10 and conforming to the vapor pressure curve of water. In this embodiment, the heating in the chamber 10 is started after the exhaust starts, and the boiling point of the water in the chamber 10 drops, so the moisture evaporates at a temperature lower than the boiling point of water at atmospheric pressure, thereby promoting the evaporation of moisture. removal. exist In the case of reliably evaporating moisture, it is preferable to heat, for example, to 80° C. or higher. Heating by the heat of the plasma is continued until the measured value of the partial pressure of the moisture-related component measured by the gas analyzer 80 falls below a predetermined threshold (No (NO) in step S106 ).

During the heat treatment, the gate valve GV1 between the transfer chamber 60 and the chamber 10 is opened. That is, the heat treatment is performed in a state where the transfer chamber 60 communicates with the chamber 10 . Since the transfer chamber 60 and the chamber 10 form a space communicating with each other, the moisture-related components in the chamber 10 detached from the components in the chamber 10 undergoing heat treatment are captured by the cooling device 70 of the transfer chamber 60 . Therefore, the measured value of the moisture-related component that rises temporarily decreases with the lapse of time. Accompanying this, as shown in FIG. 6(2), the inside of the chamber 10 is depressurized. When the measured value of the moisture-related component is below the threshold (YES in step S106), the process gas introduction part 428 stops introducing the process gas G2 (process gas stop step: step S107), and the RF power supply 424 is turned off (stop application of high-frequency power), thereby stopping plasma formation (plasma stop step: step S108). Furthermore, the introduction of the oxygen gas may also be stopped after stopping the argon gas and stopping the plasmaization. Furthermore, the rotation of the turntable 31 is stopped (step of stopping rotation of the turntable: step S109). Thereafter, the gate valve GV1 of the transfer chamber 60 is closed. The exhaust by the exhaust unit 20 is continued before the start of the film forming process and also after the start of the film forming process.

(film forming treatment)

Next, the operation of the film formation process on the workpiece W will be described. In addition, before the film formation process, the workpiece W is placed on the transfer device 106 with the gate valve GV1 closed. The pallet 34 is carried into the transfer chamber 60 from the load lock unit 62, and the workpiece W and the pallet 34 are dehumidified by the cooling device 70.

First, as shown in FIG. 6( 3 ), the pallet 34 on which the workpiece W is mounted is sequentially carried from the transfer chamber 60 into the chamber 10 by the conveyance device 106 . The holders 33 individually hold the pallets 34 carried in by the conveyance device 106 , so that all the pallets 34 on which the workpieces W are loaded are placed on the rotary table 31 .

Then, as shown in FIG. 6(4), in the chamber 10, when the chamber 10 is decompressed to a predetermined pressure by the exhaust unit 20, the rotary table 31 on which the workpiece W is placed rotates to achieve a predetermined rotation. speed. When the predetermined rotation speed is reached, film formation on the workpiece W by the film formation processing unit 410 is started. That is, the sputtering gas introduction part 419 supplies the sputtering gas G1 to the processing space 41 through the gas introduction port 417 . The power supply unit 416 applies a voltage to the target material 412, thereby turning the sputtering gas G1 into plasma. The ions generated by the plasma collide with the target 412 to knock out particles. When the unprocessed workpiece W passes through the film formation processing unit 410 , a thin film in which particles are deposited is formed on the surface.

In this way, the workpiece W on which the thin film is formed passes through the film formation processing unit 410 by the rotation of the rotary table 31 while passing through the heating unit 420 , and the thin film is oxidized. That is, the process gas introduction part 428 supplies the process gas G2 containing oxygen gas to the processing space 42 through the gas introduction port 426 . Then, the chemical species of oxygen generated by the plasma collides with the thin film on the workpiece W, whereby the thin film becomes an oxide film. Furthermore, as shown in FIG. 6(4), the pressure in the chamber 10 is slightly increased by introducing the sputtering gas G1 and the process gas G2.

In this way, the workpiece W passes through the processing space 41 of the film formation processing unit 410 in operation, thereby undergoing film formation processing, and the workpiece W passes through the processing space 42 of the operating heating unit 420 , thereby undergoing oxidation treatment. It should be noted that "operating" has the same meaning as the plasma generation operation in which plasma is generated in the processing space 41 and the processing space 42 of each processing unit.

The rotary table 31 continues to rotate until an oxide film of a predetermined thickness is formed on the workpiece W, that is, until a predetermined time obtained in advance through simulation or experimentation elapses. When a predetermined time elapses, first, the operation of the film formation processing unit 410 is stopped, and the operation of the heating unit 420 is stopped. Then, the rotation of the turntable 31 is stopped. Thereafter, as shown in FIG. 6(5), the introduction of the sputtering gas G1 and the process gas G2 is stopped, and the pressure in the chamber 10 decreases. Then, the tray 34 on which the workpiece W is placed is discharged from the chamber 10 to the transfer chamber 60 by opening the gate valve GV1 . Furthermore, the gate valve GV1 is closed, the gate valve GV2 is opened, and the pallet 34 on which the workpiece W is placed is discharged to the outside through the load lock unit 62 .

[Effect]

(1) As above, the film forming apparatus 1 of the present embodiment includes: the chamber 10 capable of vacuuming the inside; the exhaust unit 20 for exhausting the inside of the chamber 10 ; The stage 31 includes a conveyance unit 30 that cyclically conveys the workpiece W, and a plurality of plasma processing units 40 that are installed in the chamber 10 to perform plasma processing on the workpiece W that is cyclically conveyed.

The plurality of plasma processing units 40 respectively have a processing space 41 and a processing space 42 for performing plasma processing, and at least one of the plurality of plasma processing units 40 It is a film-forming processing part 410 that performs film-forming processing on the workpiece W that is circulated and transported by sputtering, and at least one of the plurality of plasma processing parts 40 is a heating part 420 that is not used for forming. In the state of the film formation process in the film processing unit 410, plasma is generated with the exhaust by the exhaust unit 20 and the rotation of the turntable 31, and the inside of the chamber 10 is heated via the turntable 31, thereby removing the chamber. Moisture in chamber 10.

In addition, the water removal method of the film forming apparatus 1 of this embodiment includes: an exhaust start step, the exhaust unit 20 starts exhausting the chamber 10; a rotation start step, the rotary table 31 starts to rotate; a process gas introduction step, the process gas The introduction part 428 introduces the process gas G2 into the processing space 42; the plasma generation step, the plasma generator makes the process gas G2 in the processing space 42 plasma; the process gas stop step, the process gas introduction part 428 stops the introduction of the process gas G2; In the plasma stop step, the plasma generator stops the plasmaization of the process gas G2 in the processing space 42; and in the rotation stop step, the rotation of the rotary table 31 is stopped.

In this way, the inside of the chamber 10 is heated via the turntable 31 by utilizing the heat of the plasma, thereby promoting removal of moisture in the chamber 10 . Thus, the degree of vacuum in the chamber 10 can be improved early. For example, in the present embodiment, a vacuum degree of about 5×10 ^-5 Pa can be realized in about three hours. By quickly attaining the degree of vacuum in the high-vacuum region required for such a film-forming process by sputtering, it is possible to form a dense film with stable film quality with high productivity. In the case of depressurization by exhaust only, it takes several days to achieve such a vacuum, so the time is significantly shortened. In addition, since there is no need to provide a heating device in each of the plurality of plasma processing units 40, the cost can be suppressed without complicating the structure of the device.

Heating can also be performed by generating plasma in the film formation processing unit 410 . However, if the film formation processing part 410 is operated, the target material 412 will be consumed, and the replacement|exchange frequency of the target material 412 will increase. In addition, the film-forming material will adhere to the chamber 10 again. In the present embodiment, since plasma is generated and heated by the heating unit 420 independent of the film formation processing unit 410 , the target material 412 is not consumed and the deposition of the film formation material does not occur. In addition, the turntable 31 has roughness enough to catch the film formation material so that the film formation material does not adhere to the workpiece W, but it catches moisture when it is released to the air during maintenance. By rotating the turntable 31 when the space 42 is heated, the turntable 31 is uniformly heated, and the moisture adhering to the surface of the turntable 31 can also be desorbed.

(2) The film forming apparatus 1 has the antiadhesive plate 50 detachably provided in the chamber 10 to prevent the film forming material scattered from the film forming processing unit 410 from adhering in the chamber 10 . Therefore, by cleaning the anti-adhesion plate 50 with the film-forming material attached thereto, and installing it in the chamber 10 for the heating, all the moisture from the anti-adhesion plate 50 after cleaning can be removed as soon as possible. Thereby, the environment in the chamber 10 can be maintained in a clean state free of moisture or residues of film-forming materials, and stable film-quality film formation can be performed.

(3) The film forming apparatus 1 has the cooling device 70 for removing moisture in the discharged gas by cooling the gas discharged from the chamber 10 . Moisture is captured by the cooling device 70 in this manner, so that it can be removed at a higher rate.

(4) The transfer chamber 60 for loading and unloading the workpiece W from the chamber 10 via the gate valve GV1 is connected to the chamber 10 , and the cooling device 70 is provided in the transfer chamber 60 . Therefore, in the transfer chamber 60 separate from the heated chamber 10, by Since the cooling device 70 cools and captures moisture, the influence of the heat in the chamber 10 can be suppressed and a reduction in cooling capacity can be prevented. In addition, the transfer chamber 60 is isolated from the chamber 10 by closing the gate valve GV1 during film formation. Therefore, even if the inside of the chamber 10 is reheated by the plasma of the film forming part or the film processing part during the film forming process, the moisture captured by the cooling device 70 in the transfer chamber 60 is not detached and released into the chamber 10. . Accordingly, it is possible to prevent moisture-related components from increasing in the chamber 10 during the film formation process.

(5) The heating unit 420 has a process gas introducing unit 428 for introducing the process gas G2 into the processing space 42 , and a plasma generator for generating inductively coupled plasma in the processing space 42 introduced with the process gas G2 .

The plasma generated in the processing space 42 in this manner is an inductively coupled plasma generated by the antenna 423, and thus damage to the turntable 31 and the like or contamination by generated particles can be prevented. That is, for example, when the electrodes provided in the chamber 10 and the turntable 31 are used as a pair of electrodes, and a high-frequency voltage is applied to the electrode as the anode to generate plasma, bias is applied to the turntable 31 functioning as a part of the cathode. A voltage is applied so that ions are introduced and the surface of the rotary table 31 is sputtered (etched). Therefore, the turntable 31 is damaged, and particles generated by sputtering are scattered. In this embodiment, the plasma generated in the processing space 42 is an inductively coupled plasma generated by electromagnetic induction by applying a high-frequency voltage to the antenna 423. Therefore, no bias voltage is applied to the turntable 31, and ion generation can be suppressed. sputtering, so that damage to the turntable 31 can be suppressed. For example, the etching rate by inductively coupled plasma is about one-tenth that of the case of using a cylindrical electrode.

(6) The film-forming apparatus 1 has: The gas analysis device 80 for the component amount of the gas; and the control unit 90 for controlling the heating unit 420 based on the gas component amount measured by the gas analysis device 80 . Therefore, the heat treatment can be stopped at an appropriate timing when the amount of the moisture-related components is sufficiently reduced, and the process can be shifted to the film-forming treatment.

(7) The heating unit 420 is a film processing unit that performs film processing on the film formed on the workpiece W that is circulated and conveyed by the rotary table 31 . Therefore, it is not necessary to provide the heating unit 420 independently of the film processing unit, and the apparatus structure can be simplified.

[Other implementations]

Although the embodiment and the modification of each part of this invention were described, the said embodiment and the modification of each part are presented as an example, and are not intended to limit the scope of invention. These novel embodiments described above can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the gist of the invention. These embodiments and modifications thereof are included in the scope or spirit of the invention, and are included in the invention described in the claims.

For example, the transfer chamber 60 may not be provided. That is, the moisture generated in the chamber 10 due to heating is exhausted by the exhaust unit 20 of the chamber 10, whereby the effect of dehumidification can also be obtained. Thereby, a simpler structure can be made and cost can be suppressed. In that case, the cooling device 70 may be absent. Wherein, the cooling device 70 may be disposed in the chamber 10 . For example, the speed of dehumidification can be increased by providing the cooling device 70 in the exhaust part 20 .

The cooling device 70 is provided with a refrigerator and a cooling coil through which the refrigerant flows, but is not limited thereto, and may be a cooling plate having a Peltier element. The cooling device 70 only needs to be able to cool down to a temperature at which moisture is frozen and adsorbed.

The gas analysis device 80 may not be provided. That is, it may be a control to stop the heating when a predetermined time obtained in advance by simulation, experiment, or the like elapses from the start of the heating. In this case, the "predetermined time" can be defined as the time to remove moisture-related components to such an extent that it does not affect film formation, or the time to reach a predetermined degree of vacuum before introducing the sputtering gas G1. In addition, the control unit 90 may not perform feedback control to stop the plasma of the heating unit 420 based on the gas component amount measured by the gas analysis device 80, but the operator may use the mass displayed on the display unit of the gas analysis device 80 or based on the mass. The partial pressure is judged and the heating is stopped.

In addition, the chamber 10 is depressurized while removing moisture-related components. Therefore, when the measured value of the moisture-related components becomes below a threshold value, the pressure in the chamber 10 also becomes the sputtering gas G1 and the process gas G2 during the film formation process. The pressure (about 1×10 ^-4 ) in the predetermined high vacuum area before introduction. Therefore, instead of the gas analysis device 80 , a pressure gauge for measuring the pressure in the chamber 10 may be provided, and heating may be stopped when the pressure in the chamber 10 measured by the pressure gauge falls below a threshold value. Alternatively, a pressure gauge may be used together with the gas analysis device 80, and heating may be stopped when both the measured value of the moisture-related component and the measured value of the pressure in the chamber 10 fall below a threshold value.

In addition, the moisture-related component detected by the gas analyzer 80 may be at least any one of water (H ₂ O), hydrogen (H ₂ ), and hydroxyl group (—OH).

During the heat treatment, a substrate different from the workpiece W, for example, a dummy substrate formed of quartz or the like may be placed on the turntable 31 in order to suppress damage by ion sputtering present in the plasma. In addition, as the gas used as the process gas G2, only any of argon gas, nitrogen gas, and oxygen gas may be used. For example, by using only oxygen gas, as opposed to using Compared with the case of argon gas, sputtering can be suppressed. Furthermore, as the process gas G2, what is necessary is just to generate|occur|produce plasma, and therefore the gas other than the said exemplified gas can also be used. In addition, the flow rate of the process gas G2 may be the same or different in the heat treatment and the film formation treatment.

When stopping the plasma generation operation, for example, in the above embodiment, at least any one of introducing the process gas G2 by the process gas introducing unit 428 or applying a voltage by the RF power supply 424 may be stopped. In addition, although it exemplifies that the cooling start step and the rotation start step are performed after the exhaust start step, these may be performed simultaneously, or the order may be reversed. That is, the order of each step of the heat treatment is not limited to the above-mentioned exemplified ones.

The number of plasma processing units 40 and the number of film forming processing units 410 and heating units 420 included therein are not limited to the above-mentioned illustrated numbers. Each of the film forming processing unit 410 and the heating unit 420 may be single or plural. It is also possible to have a structure in which a plurality of film formation processing parts 410 formed of different types of target materials are included, and multilayer films formed of different types of materials can be laminated. A plurality of heating units 420 that perform different film treatments may be included, and a part or all of them may be used for dehumidification by heating to realize higher-speed dehumidification.

The gate valve GV1 and the gate valve GV2 are provided with one door each, for example, in the above embodiment, but they may be connected to the loading and unloading port 101 of the chamber 10, the loading and unloading port 102 and the loading and unloading port 108 of the transfer chamber 60, respectively. The loading and unloading ports 109 of the load lock unit 62 face each other. That is, as long as the chamber 10 , the transfer chamber 60 , and the respective spaces of the load lock unit 62 can be opened and separated, the door is not limited to the above-described illustrated door.

1: Film forming device

10: chamber

12: Division

30: Moving department

31: Rotary table

40: Plasma Processing Department

50: Anti-adhesion plate

60: transfer chamber

62:Load lock unit

70: cooling device

80: Gas analysis device

90: Control Department

410: Film Formation Treatment Department

412: target

420: heating part

GV1, GV2: gate valve

L: transport path

W: Workpiece

Claims (9)

A film forming device, characterized by comprising: a chamber capable of vacuuming the interior; an exhaust unit for exhausting the inside of the chamber; a transport unit for cyclically transporting workpieces using a rotary table installed in the chamber; a plasma processing part, which is installed in the chamber and performs plasma processing on the workpiece after being conveyed in a cycle; and a control part, which controls the exhaust part, the conveying part and the plurality of plasma processing parts Each of the plurality of plasma processing units has a processing space for performing plasma treatment separated by a partition, and at least one of the plurality of plasma processing units is used to form the workpiece after being circulated and transported by sputtering. A film-forming processing section for film processing, wherein at least one of the plurality of plasma processing sections is a heating section that performs film-processing on a film formed on the workpiece by the film-forming processing section. part, the heating part generates plasma in the processing space, heats the chamber via the rotary table, thereby removing moisture in the chamber, and during the heating by the heating part, The plasma generating operation is performed in the processing space of the heating unit, the plasma generating operation is not performed in the processing space of the film forming processing unit, and the workpiece to be subjected to the film forming process by the film forming processing unit is not placed. In the state of the turntable, the control unit controls the transfer unit so that the turntable The control unit controls the evacuation unit to perform evacuation while rotating and passing through the processing space of the heating unit where the plasma is generated and the processing space of the film formation processing unit where the plasma is not generated. The film forming apparatus according to claim 1, further comprising an adhesion preventing plate detachably provided in the chamber to prevent the film forming material scattered from the film forming processing section from adhering to the film forming apparatus. inside the chamber. The film-forming apparatus according to Claim 1 or Claim 2 is characterized by comprising a cooling device for removing moisture in the gas detached from the chamber by cooling the gas detached from the chamber. The film forming apparatus according to claim 3, wherein a transfer chamber for carrying the workpiece into and out of the chamber through a gate valve is connected to the chamber, and the transfer chamber is provided with the cooling device. The film forming apparatus according to claim 4, wherein the cooling device includes a cooling coil through which a refrigerant flows and a refrigerator, and the cooling coil is arranged along a wall surface inside the transfer chamber. The film forming apparatus according to claim 4, wherein the heating by the heating unit is performed with the gate valve of the transfer chamber opened. The film forming apparatus according to claim 1, wherein the heating unit has: a process gas introduction unit for introducing process gas into the processing space; and The plasma generator generates inductively coupled plasma in the processing space into which the process gas is introduced. The film forming apparatus according to claim 1, comprising: a gas analysis device for measuring the component amount of gas contained in the exhaust gas from the chamber; and a control unit based on the gas analysis device measured The composition amount of the gas is controlled by the heating part. A method for removing moisture in a film forming device, characterized in that a plurality of plasma processing units are arranged in a chamber, and at least one of the plurality of plasma processing units uses sputtering to circulate and transport a workpiece on a rotary table A film-forming processing section that performs film-forming processing, wherein at least one of the plurality of plasma processing sections is a heating section that performs film-processing on a film formed on the workpiece by the film-forming processing section A method for removing water in a film forming apparatus of a film processing unit, wherein each of the plurality of plasma processing units has a processing space partitioned by a partition, and the gas introduced into the processing space by a process gas introduction unit is introduced into the processing space by a plasma generator. The process gas is converted into plasma, and the inside of the chamber can be evacuated by the exhaust part. The heating part generates plasma in the processing space and heats the inside of the chamber via the rotary table. In order to remove the moisture in the chamber, the moisture removal method of the film forming device includes: an exhaust start step, the exhaust unit starts the exhaust of the chamber; a rotation start step, the workpiece is not mounted In the state, the turntable starts to rotate; a process gas introduction step, the process gas introduction unit introduces a process gas into the processing space of at least one of the plurality of plasma processing units; a plasma generation step, the plasma generator makes the processing space The process gas is converted into plasma, and passes through the processing space of the heating unit that generates the plasma while rotating while passing the workpiece, and the processing space of the film formation processing unit that does not generate the plasma. The rotary table is used to heat the chamber, thereby removing moisture in the chamber; the process gas stop step, the process gas introduction part stops the introduction of the process gas; the plasma stop step, the plasma a generator stopping plasmaization of the process gas of the process space; and a rotation stopping step of stopping rotation of the rotary table.